STK14C88-3
256 Kbit (32K x 8) AutoStore nvSRAM
Features
Functional Description
■
■
■
■
■
■
■
■
■
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35 ns and 45 ns access times
The Cypress STK14C88-3 is a 256 Kb fast static RAM with
a nonvolatile element in each memory cell. The embedded
Automatic nonvolatile STORE on power loss
Nonvolatile STORE under Hardware or Software control
Automatic RECALL to SRAM on power up
Unlimited Read/Write endurance
Unlimited RECALL cycles
nonvolatile
elements
incorporate
QuantumTrap™
technology producing the world’s most reliable nonvolatile
memory. The SRAM provides unlimited read and write
cycles, while independent, nonvolatile data resides in the
highly reliable QuantumTrap cell. Data transfers from the
SRAM to the nonvolatile elements (the STORE operation)
takes place automatically at power down. On power up, data
is restored to the SRAM (the RECALL operation) from the
nonvolatile memory. Both the STORE and RECALL opera-
tions are also available under software control.
1,000,000 STORE cycles
100 year data retention
Single 3.3V+0.3V power supply
Commercial and Industrial Temperatures
32-pin (300mil) SOIC and 32-pin (600 mil) PDIP packages
RoHS compliance
Logic Block Diagram
V
CC
V
CAP
Quantum Trap
512 X 512
POWER
CONTROL
A5
STORE
A6
A7
A8
RECALL
STORE/
RECALL
CONTROL
STATIC RAM
ARRAY
512 X 512
HSB
A9
A11
A12
A13
A14
SOFTWARE
DETECT
A13
-A0
DQ0
COLUMN I/O
DQ1
DQ2
DQ3
COLUMN DEC
DQ4
DQ5
A0
A4
A10
A1
A3
A2
DQ6
DQ7
OE
CE
WE
Cypress Semiconductor Corporation
Document Number: 001-50592 Rev. **
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised January 29, 2009
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STK14C88-3
Figure 2. AutoStore Mode
Device Operation
The STK14C88-3 nvSRAM is made up of two functional compo-
nents paired in the same physical cell. These are an SRAM
memory cell and a nonvolatile QuantumTrap cell. The SRAM
memory cell operates as a standard fast static RAM. Data in the
SRAM is transferred to the nonvolatile cell (the STORE
operation) or from the nonvolatile cell to SRAM (the RECALL
operation). This unique architecture enables the storage and
recall of all cells in parallel. During the STORE and RECALL
operations, SRAM READ and WRITE operations are inhibited.
The STK14C88-3 supports unlimited reads and writes similar to
a typical SRAM. In addition, it provides unlimited RECALL opera-
tions from the nonvolatile cells and up to one million STORE
operations.
SRAM Read
The STK14C88-3 performs a READ cycle whenever CE and OE
are LOW while WE and HSB are HIGH. The address specified
on pins A0–14 determines the 32,768 data bytes accessed. When
the READ is initiated by an address transition, the outputs are
valid after a delay of tAA (READ cycle 1). If the READ is initiated
by CE or OE, the outputs are valid at tACE or at tDOE, whichever
is later (READ cycle 2). The data outputs repeatedly respond to
address changes within the tAA access time without the need for
transitions on any control input pins, and remains valid until
another address change or until CE or OE is brought HIGH, or
WE or HSB is brought LOW.
WRITE operation has taken place since the most recent STORE
or RECALL cycle. Software initiated STORE cycles are
performed regardless of whether a WRITE operation has taken
place. An optional pull-up resistor is shown connected to HSB.
The HSB signal is monitored by the system to detect if an
AutoStore cycle is in progress.
SRAM Write
If the power supply drops faster than 20 us/volt before Vcc
reaches VSWITCH, then a 1 ohm resistor should be connected
between VCC and the system supply to avoid momentary excess
A WRITE cycle is performed whenever CE and WE are LOW and
HSB is HIGH. The address inputs must be stable prior to entering
the WRITE cycle and must remain stable until either CE or WE
goes HIGH at the end of the cycle. The data on the common IO
pins DQ0–7 are written into the memory if it has valid tSD, before
the end of a WE controlled WRITE or before the end of an CE
controlled WRITE. Keep OE HIGH during the entire WRITE cycle
to avoid data bus contention on common IO lines. If OE is left
LOW, internal circuitry turns off the output buffers tHZWE after WE
goes LOW.
of current between VCC and VCAP
.
AutoStore Inhibit Mode
If an automatic STORE on power loss is not required, then VCC
disabled. If the STK14C88-3 is operated in this configuration,
references to VCC are changed to VCAP throughout this data
sheet. In this mode, STORE operations are triggered through
software control. It is not permissible to change between these
options “On the fly”.
AutoStore® Operation
The STK14C88-3 can be powered in one of three storage opera-
tions:
During normal operation, the device draws current from VCC to
charge a capacitor connected to the VCAP pin. This stored
charge is used by the chip to perform a single STORE operation.
If the voltage on the VCC pin drops below VSWITCH, the part
automatically disconnects the VCAP pin from VCC. A STORE
operation is initiated with power provided by the VCAP capacitor.
Figure 2 shows the proper connection of the storage capacitor
(VCAP) for automatic store operation. A charge storage capacitor
having a capacity of between 68 uF and 220 uF (+20%) rated at
4.7V should be provided.
To reduce unnecessary nonvolatile stores, AutoStore and
Hardware Store operations are ignored, unless at least one
Document Number: 001-50592 Rev. **
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STK14C88-3
and share a single capacitor. The capacitor size is scaled by
the number of devices connected to it. When any one of the
STK14C88-3 detects a power loss and asserts HSB, the
common HSB pin causes all parts to request a STORE cycle.
(A STORE takes place in those STK14C88-3 that are written
since the last nonvolatile cycle.)
Figure 3. AutoStore Inhibit Mode
During any STORE operation, regardless of how it is initiated,
the STK14C88-3 continues to drive the HSB pin LOW,
releasing it only when the STORE is complete. After
completing the STORE operation, the STK14C88-3 remains
disabled until the HSB pin returns HIGH.
If HSB is not used, it is left unconnected.
Hardware RECALL (Power Up)
During power up or after any low power condition (VCC
<
VRESET), an internal RECALL request is latched. When VCC
once again exceeds the sense voltage of VSWITCH, a RECALL
cycle is automatically initiated and takes tHRECALL to complete.
If the STK14C88-3 is in a WRITE state at the end of power up
RECALL, the SRAM data is corrupted. To help avoid this
situation, a 10 Kohm resistor is connected either between WE
and system VCC or between CE and system VCC
.
Software STORE
Data is transferred from the SRAM to the nonvolatile memory
by a software address sequence. The STK14C88-3 software
STORE cycle is initiated by executing sequential CE controlled
READ cycles from six specific address locations in exact
order. During the STORE cycle, an erase of the previous
nonvolatile data is first performed followed by a program of the
nonvolatile elements. When a STORE cycle is initiated, input
and output are disabled until the cycle is completed.
Hardware STORE (HSB) Operation
The STK14C88-3 provides the HSB pin for controlling and
acknowledging the STORE operations. The HSB pin is used
to request a hardware STORE cycle. When the HSB pin is
driven LOW, the STK14C88-3 conditionally initiates a STORE
operation after tDELAY. An actual STORE cycle only begins if a
WRITE to the SRAM takes place since the last STORE or
RECALL cycle. The HSB pin also acts as an open drain driver
that is internally driven LOW to indicate a busy condition, while
the STORE (initiated by any means) is in progress. Pull up this
pin with an external 10K ohm resistor to VCAP if HSB is used
as a driver.
Because a sequence of READs from specific addresses is
used for STORE initiation, it is important that no other READ
or WRITE accesses intervene in the sequence. If they
intervene, the sequence is aborted and no STORE or RECALL
takes place.
To initiate the software STORE cycle, the following READ
sequence is performed:
SRAM READ and WRITE operations, that are in progress
when HSB is driven LOW by any means, are given time to
complete before the STORE operation is initiated. After HSB
goes LOW, the STK14C88-3 continues SRAM operations for
tDELAY. During tDELAY, multiple SRAM READ operations take
place. If a WRITE is in progress when HSB is pulled LOW, it
allows a time, tDELAY to complete. However, any SRAM
WRITE cycles requested after HSB goes LOW are inhibited
until HSB returns HIGH.
1. Read address 0x0E38, Valid READ
2. Read address 0x31C7, Valid READ
3. Read address 0x03E0, Valid READ
4. Read address 0x3C1F, Valid READ
5. Read address 0x303F, Valid READ
6. Read address 0x0FC0, Initiate STORE cycle
The software sequence is clocked with CE controlled READs.
When the sixth address in the sequence is entered, the
STORE cycle commences and the chip is disabled. It is
important that READ cycles and not WRITE cycles are used
in the sequence. It is not necessary that OE is LOW for a valid
sequence. After the tSTORE cycle time is fulfilled, the SRAM is
again activated for READ and WRITE operation.
The HSB pin is used to synchronize multiple STK14C88-3
while using a single larger capacitor. To operate in this mode,
the HSB pin is connected together to the HSB pins from the
other STK14C88-3. An external pull up resistor to VCAP is
required, since HSB acts as an open drain pull down. The
V
CAP pins from the other STK14C88-3 parts are tied together
Document Number: 001-50592 Rev. **
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STK14C88-3
Software RECALL
Low Average Active Power
Data is transferred from the nonvolatile memory to the SRAM by
a software address sequence. A software RECALL cycle is
initiated with a sequence of READ operations in a manner similar
to the software STORE initiation. To initiate the RECALL cycle,
the following sequence of CE controlled READ operations is
performed:
CMOS technology provides the STK14C88-3 the benefit of
drawing significantly less current when it is cycled at times longer
ICC and READ or WRITE cycle time. Worst case current
consumption is shown for both CMOS and TTL input levels
(commercial temperature range, VCC = 3.6V, 100% duty cycle
on chip enable). Only standby current is drawn when the chip is
disabled. The overall average current drawn by the STK14C88-3
depends on the following items:
1. Read address 0x0E38, Valid READ
2. Read address 0x31C7, Valid READ
3. Read address 0x03E0, Valid READ
4. Read address 0x3C1F, Valid READ
5. Read address 0x303F, Valid READ
6. Read address 0x0C63, Initiate RECALL cycle
1. The duty cycle of chip enable
2. The overall cycle rate for accesses
3. The ratio of READs to WRITEs
4. CMOS versus TTL input levels
5. The operating temperature
6. The VCC level
Internally, RECALL is a two step procedure. First, the SRAM data
is cleared, and then the nonvolatile information is transferred into
the SRAM cells. After the tRECALL cycle time, the SRAM is once
again ready for READ and WRITE operations. The RECALL
operation does not alter the data in the nonvolatile elements. The
nonvolatile data can be recalled an unlimited number of times.
7. IO loading
Figure 4. Current Versus Cycle Time (READ)
Preventing STORE
The STORE function can be disabled on the fly by holding HSB
high with a driver capable of sourcing 30 mA at a VOH of at least
2.2V, because it has to overpower the internal pull down device.
This device drives HSB LOW for 20 μs at the onset of a STORE.
When the STK14C88-3 is connected for AutoStore operation
(system VCC connected to VCC and a 68 μF capacitor on VCAP
)
and VCC crosses VSWITCH on the way down, the STK14C88-3
attempts to pull HSB LOW. If HSB does not actually get below
VIL, the part stops trying to pull HSB LOW and aborts the STORE
attempt.
Hardware Protect
The STK14C88-3 offers hardware protection against inadvertent
STORE operation and SRAM WRITEs during low voltage condi-
tions. When VCAP<VSWITCH, all externally initiated STORE
operations and SRAM WRITEs are inhibited.
Figure 5. Current Versus Cycle Time (WRITE)
Noise Considerations
The STK14C88-3 is a high speed memory. It must have a high
frequency bypass capacitor of approximately 0.1 µF connected
between VCC and VSS, using leads and traces that are as short
as possible. As with all high speed CMOS ICs, careful routing of
power, ground, and signals reduce circuit noise.
Document Number: 001-50592 Rev. **
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STK14C88-3
system manufacturing test to ensure these system routines
work consistently. Power up boot firmware routines should
rewrite the nvSRAM into the desired state. While the
nvSRAM is shipped in a preset state, best practice is to again
rewrite the nvSRAM into the desired state as a safeguard
against events that might flip the bit inadvertently (program
bugs or incoming inspection routines).
Best Practices
nvSRAM products have been used effectively for over 15
years. While ease-of-use is one of the product’s main system
values, experience gained working with hundreds of applica-
tions has resulted in the following suggestions as best
practices:
■
The nonvolatile cells in an nvSRAM are programmed on the
test floor during final test and quality assurance. Incoming
inspection routines at customer or contract manufacturer’s
sites, sometimes, reprogram these values. Final NV patterns
are typically repeating patterns of AA, 55, 00, FF, A5, or 5A.
End product’s firmware should not assume an NV array is in
a set programmed state. Routines that check memory
content values to determine first time system configuration
and cold or warm boot status, should always program a
unique NV pattern (for example, a complex 4-byte pattern of
46 E6 49 53 hex or more random bytes) as part of the final
■
The VCAP value specified in this data sheet includes a
minimum and a maximum value size. Best practice is to meet
this requirement and not exceed the max VCAP value
because the higher inrush currents may reduce the reliability
of the internal pass transistor. Customers who want to use a
larger VCAP value to ensure there is extra store charge
should discuss their VCAP size selection with Cypress to
understand any impact on the VCAP voltage level at the end
of a tRECALL period.
Table 2. Hardware Mode Selection
A13 – A0
Mode
IO
Power
Standby
Active
CE
H
WE
X
HSB
H
X
X
X
X
Not Selected
Read SRAM
Write SRAM
Nonvolatile Store
Output High Z
Output Data
Input Data
L
L
X
L
H
L
H
H
L
[2]
X
H
Output High Z
ICC2
H
0x0E38
0x31C7
0x03E0
0x3C1F
0x303F
0x0FC0
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Nonvolatile STORE
L
H
H
0x0E38
0x31C7
0x03E0
0x3C1F
0x303F
0x0C63
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Nonvolatile RECALL
Notes
1. I/O state assumes OE < V . Activation of nonvolatile cycles does not depend on state of OE.
IL
2. HSB STORE operation occurs only if an SRAM WRITE has been done since the last nonvolatile cycle. After the STORE (if any) completes, the part will go
into standby mode, inhibiting all operations until HSB rises.
3. CE and OE LOW and WE HIGH for output behavior.
4. The six consecutive addresses must be in the order listed. WE must be high during all six consecutive CE controlled cycles to enable a nonvolatile cycle.
5. While there are 15 addresses on the STK14C88-3, only the lower 14 are used to control software modes.
Document Number: 001-50592 Rev. **
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STK14C88-3
Voltage on DQ0-7 or HSB .......................–0.5V to Vcc + 0.5V
Power Dissipation ......................................................... 1.0W
DC output Current (1 output at a time, 1s duration) .... 15 mA
Operating Range
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Temperature under bias.............................. –55°C to +125°C
Supply Voltage on VCC Relative to GND ..........–0.5V to 7.0V
Voltage on Input Relative to Vss............–0.6V to VCC + 0.5V
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
VCC
3.0V to 3.6V
3.0V to 3.6V
-40°C to +85°C
DC Electrical Characteristics
Parameter
ICC1
Description
Test Conditions
Min
Max Unit
Average VCC Current tRC = 35 ns
tRC = 45 ns
Commercial
50
42
mA
mA
Dependent on output loading and cycle rate. Values
obtained without output loads.
Industrial
52
44
mA
mA
I
OUT = 0 mA.
Average VCC Current All Inputs Do Not Care, VCC = Max
during STORE Average current for duration tSTORE
Average VCC Current WE > (VCC – 0.2V). All other inputs cycling.
ICC2
ICC3
3
9
mA
mA
at tRC= 200 ns, 5V,
25°C Typical
Dependent on output loading and cycle rate. Values obtained without
output loads.
ICC4
AverageVCAP Current All Inputs Do Not Care, VCC = Max
2
mA
during AutoStore
Cycle
Average current for duration tSTORE
[7]
ISB1
Average VCC Current tRC=35ns, CE > VIH
(Standby, Cycling TTL tRC=45ns, CE > VIH
Input Levels)
Commercial
Industrial
18
16
mA
mA
mA
19
17
[7]
ISB2
VCC Standby Current CE > (VCC – 0.2V). All others VIN < 0.2V or > (VCC – 0.2V).
1
(Standby, Stable
CMOS Input Levels)
IIX
Input Leakage Current VCC = Max, VSS < VIN < VCC
-1
-1
+1
+1
μA
μA
IOZ
Off State Output
Leakage Current
VCC = Max, VSS < VIN < VCC, CE or OE > VIH or WE < VIL
VIH
VIL
Input HIGH Voltage
2.2
VCC
0.5
+
V
V
Input LOW Voltage
VSS
0.5
–
0.8
VOH
VOL
VBL
Output HIGH Voltage IOUT = –4 mA except HSB
Output LOW Voltage IOUT = 8 mA except HSB
2.4
V
V
V
0.4
0.4
Logic ‘0’ Voltage on
HSB output
IOUT = 3 mA
VCAP
Storage Capacitor
Between VCAP pin and Vss, 68 to 220uF +20%, 4.7V rated.
54
264
uF
Notes
6.
V
reference levels throughout this data sheet refer to V if that is where the power supply connection is made, or V
if V is connected to ground.
CC
CC
CAP CC
7. CE > V will not produce standby current levels until any nonvolatile cycle in progress has timed out.
IH
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STK14C88-3
Data Retention and Endurance
Parameter
Description
Min
100
Unit
Years
K
DATAR
NVC
Data Retention
Nonvolatile STORE Operations
1,000
Capacitance
Parameter Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
CC = 0 to 3.0 V
Max
5
Unit
pF
CIN
V
COUT
7
pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed.[8]
Parameter
Description
Test Conditions
32-SOIC
32-PDIP
Unit
ΘJA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA / JESD51.
TBD
TBD
°C/W
ΘJC
Thermal Resistance
(Junction to Case)
TBD
TBD
°C/W
Figure 6. AC Test Loads
R1 317Ω
3.3V
Output
R2
30 pF
351Ω
AC Test Conditions
Input Pulse Levels..................................................0 V to 3 V
Input Rise and Fall Times (10% - 90%)........................ <5 ns
Input and Output Timing Reference Levels................... 1.5 V
Note
8. These parameters are guaranteed by design and are not tested.
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STK14C88-3
AC Switching Characteristics
SRAM Read Cycle
Parameter
35 ns
45 ns
Description
Unit
Cypress
Alt
Min
Max
Min
Max
Parameter
tACE
tELQV
tAVAV, ELEH
tAVQV
Chip Enable Access Time
Read Cycle Time
35
45
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tRC
t
35
45
tAA
tDOE
Address Access Time
35
15
45
20
tGLQV
Output Enable to Data Valid
Output Hold After Address Change
Chip Enable to Output Active
Chip Disable to Output Inactive
Output Enable to Output Active
Output Disable to Output Inactive
Chip Enable to Power Active
Chip Disable to Power Standby
[10]
tOHA
tAXQX
5
5
5
5
tLZCE
tHZCE
tLZOE
tHZOE
tELQX
tEHQZ
13
13
35
15
15
45
tGLQX
0
0
0
0
tGHQZ
[8]
tPU
tELICCH
tEHICCL
[8]
tPD
Switching Waveforms
W5&
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W$$
W2+$
'4ꢀꢁ'$7$ꢀ287ꢂ
'$7$ꢀ9$/,'
W5&
$''5(66
&(
W$&(
W3'
W+=&(
W/=&(
2(
W+=2(
W'2(
W/=2(
'4ꢀꢁ'$7$ꢀ287ꢂ
'$7$ꢀ9$/,'
$&7,9(
W38
67$1'%<
,&&
Notes
9. WE and HSB must be HIGH during SRAM Read Cycles.
10. I/O state assumes CE and OE < V and WE > V ; device is continuously selected.
IL
IH
11. Measured ±200 mV from steady state output voltage.
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STK14C88-3
Table 3. SRAM Write Cycle
Parameter
35 ns
45 ns
Unit
Description
Write Cycle Time
Cypress
Parameter
Alt
Min
Max
Min
Max
tWC
tAVAV
tWLWH, WLEH
tELWH, ELEH
tDVWH, DVEH
tWHDX, EHDX
tAVWH, AVEH
tAVWL, AVEL
tWHAX, EHAX
tWLQZ
tWHQX
35
25
25
12
0
45
30
30
15
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tPWE
tSCE
tSD
tHD
tAW
tSA
tHA
tHZWE
tLZWE
t
Write Pulse Width
t
Chip Enable To End of Write
Data Setup to End of Write
Data Hold After End of Write
Address Setup to End of Write
Address Setup to Start of Write
Address Hold After End of Write
Write Enable to Output Disable
Output Active After End of Write
t
t
t
25
0
30
0
t
t
0
0
13
15
5
5
Switching Waveforms
tWC
ADDRESS
CE
tHA
tSCE
tAW
tSA
tPWE
WE
tHD
tSD
DATA VALID
DATA IN
tHZWE
tLZWE
HIGH IMPEDANCE
PREVIOUS DATA
DATA OUT
tWC
ADDRESS
tHA
tSCE
tSA
CE
WE
tAW
tPWE
tSD
tHD
DATA IN
DATA VALID
HIGH IMPEDANCE
DATA OUT
Notes
12. If WE is Low when CE goes Low, the outputs remain in the high impedance state.
13.
CE or WE must be greater than V during address transitions.
IH
14. HSB must be HIGH during SRAM WRITE cycles.
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STK14C88-3
AutoStore or Power Up RECALL
STK14C88-3
Parameter
Alt
Description
Unit
Min
Max
[15]
tHRECALL
tRESTORE
tHLHZ
Power up RECALL Duration
STORE Cycle Duration
550
10
μs
ms
ns
V
tSTORE
tVSBL
Low Voltage Trigger (VSWITCH) to HSB low
Low Voltage Reset Level
300
2.4
VRESET
VSWITCH
Low Voltage Trigger Level
2.7
1
2.95
V
tDELAY
tBLQZ
Time Allowed to Complete SRAM Cycle
μs
Switching Waveforms
Figure 11. AutoStore/Power Up RECALL
WE
Notes
15. t
starts from the time V rises above V
.
SWITCH
HRECALL
CC
16. CE and OE low and WE high for output behavior.
17. HSB is asserted low for 1us when V
drops through V
. If an SRAM WRITE has not taken place since the last nonvolatile cycle, HSB will be released and no
CAP
SWITCH
store will take place.
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STK14C88-3
Software Controlled STORE/RECALL Cycle
35 ns
45 ns
Unit
Parameter
Alt
Description
Min
35
0
Max
Min
Max
tRC
tAVAV
tAVEL
tELEH
tELAX
STORE/RECALL Initiation Cycle Time
Address Setup Time
45
0
ns
ns
ns
ns
μs
tSA
tCW
Clock Pulse Width
25
20
30
20
tHACE
Address Hold Time
tRECALL
RECALL Duration
20
20
Switching Waveforms
tRC
tRC
ADDRESS # 1
ADDRESS # 6
ADDRESS
CE
tSA
tSCE
tHACE
OE
t
STORE / tRECALL
HIGH IMPEDANCE
DATA VALID
DATA VALID
DQ (DATA)
Notes
18. The software sequence is clocked on the falling edge of CE without involving OE (double clocking will abort the sequence).
19. The six consecutive addresses must be read in the order listed in the Mode Selection table. WE must be HIGH during all six consecutive cycles.
Document Number: 001-50592 Rev. **
Page 12 of 17
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STK14C88-3
Hardware STORE Cycle
STK14C88-3
Parameter
Alt
Description
Hardware STORE Pulse Width
Unit
Min
Max
tPHSB
tHLHX
tRECOVER, HHQX
15
ns
ns
ns
tDHSB
tHLBL
t
Hardware STORE High to Inhibit Off
Hardware STORE Low to STORE Busy
700
300
Switching Waveforms
Figure 13. Hardware STORE Cycle
3+6%
Note
20. t
is only applicable after t
is complete.
STORE
DHSB
Document Number: 001-50592 Rev. **
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STK14C88-3
Part Numbering Nomenclature
STK14C88- 3N F 45 I TR
Packaging Option:
TR = Tape and Reel
Blank = Tube
Temperature Range:
Blank - Commercial (0 to 70°C)
I - Industrial (-40 to 85°C)
Speed:
35 - 35 ns
45 - 45 ns
Lead Finish
F = 100% Sn (Matte Tin)
Package:
N = Plastic 32-pin 300 mil SOIC
W= Plastic 32-pin 600 mil DIP
Ordering Information
Speed
Operating
Range
Ordering Code
(ns)
Package Diagram
Package Type
35
STK14C88-3NF35TR
STK14C88-3NF35
STK14C88-3WF35
STK14C88-3NF35ITR
STK14C88-3NF35I
STK14C88-3WF35I
STK14C88-3NF45TR
STK14C88-3NF45
STK14C88-3WF45
STK14C88-3NF45ITR
STK14C88-3NF45I
STK14C88-3WF45I
51-85127
51-85127
51-85018
51-85127
51-85127
51-85018
51-85127
51-85127
51-85018
51-85127
51-85127
51-85018
32-pin SOIC
Commercial
32-pin SOIC
32-pin PDIP
32-pin SOIC
32-pin SOIC
32-pin PDIP
32-pin SOIC
32-pin SOIC
32-pin PDIP
32-pin SOIC
32-pin SOIC
32-pin PDIP
Industrial
45
Commercial
Industrial
All parts are Pb-free. The above table contains Final information. Please contact your local Cypress sales representative for availability of these parts
Document Number: 001-50592 Rev. **
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STK14C88-3
Package Diagrams
Figure 14. 32-Pin (300 Mil) SOIC (51-85127)
PIN 1 ID
16
1
MIN.
MAX.
DIMENSIONS IN INCHES[MM]
REFERENCE JEDEC MO-119
0.292[7.416]
0.299[7.594]
0.405[10.287]
0.419[10.642]
PART #
17
32
S32.3 STANDARD PKG.
SZ32.3 LEAD FREE PKG.
SEATING PLANE
0.810[20.574]
0.822[20.878]
0.090[2.286]
0.100[2.540]
0.004[0.101]
0.050[1.270]
TYP.
0.006[0.152]
0.012[0.304]
0.041[1.041]
0.026[0.660]
0.032[0.812]
0.021[0.533]
0.004[0.101]
0.0100[0.254]
0.014[0.355]
0.020[0.508]
51-85127-*A
Document Number: 001-50592 Rev. **
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STK14C88-3
Package Diagrams (continued)
Figure 15. 32-Pin (600 Mil) PDIP (51-85018)
ꢁꢄ
ꢁ
-).ꢀ
$)-%.3)/.3 ). ).#(%3
-!8ꢀ
ꢀꢆꢈꢃ
ꢀꢆꢉꢃ
ꢁꢉ
ꢈꢅ
ꢀꢃꢉꢃ
ꢀꢃꢇꢆ
3%!4).' 0,!.%
ꢁꢀꢄꢆꢃ
ꢁꢀꢄꢊꢃ
ꢀꢄꢃꢃ
ꢀꢄꢅꢆ
ꢀꢁꢂꢃ
ꢀꢁꢄꢃ
ꢀꢁꢆꢆ
ꢀꢅꢃꢃ
ꢀꢃꢃꢇ
ꢀꢃꢁꢅ
ꢈ² -).ꢀ
ꢀꢃꢁꢆ
ꢀꢃꢄꢃ
ꢀꢃꢂꢆ
ꢀꢃꢄꢆ
ꢀꢃꢇꢃ
ꢀꢁꢁꢃ
ꢀꢄꢅꢆ
ꢀꢄꢉꢃ
ꢀꢁꢅꢃ
ꢀꢁꢄꢃ
ꢀꢃꢁꢆ
ꢀꢃꢅꢃ
51-85018-*A
Document Number: 001-50592 Rev. **
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STK14C88-3
Document History Page
Document Title: STK14C88-3 256 Kbit (32K x 8) AutoStore nvSRAM
Document Number: 001-50592
Orig. of
Change
Submission
Date
Rev.
ECN No.
Description of Change
**
2625096
GVCH/PYRS
12/19/08
New data sheet
Sales, Solutions and Legal Information
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© Cypress Semiconductor Corporation, 2008-2009. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
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the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
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Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-50592 Rev. **
Revised January 29, 2009
Page 17 of 17
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holders.
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