CY7C106D
CY7C1006D
1-Mbit (256K x 4) Static RAM
Features
Functional Description [1]
• Pin- and function-compatible with CY7C106B/CY7C1006B
• High speed
The CY7C106D and CY7C1006D are high-performance
CMOS static RAMs organized as 262,144 words by 4 bits.
Easy memory expansion is provided by an active LOW Chip
Enable (CE), an active LOW Output Enable (OE), and tri-state
drivers. These devices have an automatic power-down feature
that reduces power consumption by more than 65% when the
— t = 10 ns
AA
• Low active power
— I = 80 mA @ 10 ns
CC
devices are deselected. The four input and output pins (IO
0
• Low CMOS standby power
through IO ) are placed in a high-impedance state when:
3
— I
= 3.0 mA
SB2
• Deselected (CE HIGH)
• 2.0V Data Retention
• Outputs are disabled (OE HIGH)
• Automatic power-down when deselected
• CMOS for optimum speed/power
• TTL-compatible inputs and outputs
• When the write operation is active (CE and WE LOW)
Write to the device by taking Chip Enable (CE) and Write
Enable (WE) inputs LOW. Data on the four IO pins (IO
0
• CY7C106DavailableinPb-free28-pin400-MilwideMolded
SOJ package. CY7C1006D available in Pb-free 28-pin
300-Mil wide Molded SOJ package
through IO ) is then written into the location specified on the
3
address pins (A through A ).
0
17
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW while forcing Write Enable (WE) HIGH.
Under these conditions, the contents of the memory location
specified by the address pins appears on the four IO pins.
Logic Block Diagram
INPUT BUFFER
A
1
A
2
IO
0
A
3
256K x 4
ARRAY
A
A
A
A
A
A
IO
1
4
5
6
7
8
9
IO
2
IO
3
CE
POWER
DOWN
COLUMN DECODER
WE
OE
Note
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05459 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised February 22, 2007
CY7C106D
CY7C1006D
DC Input Voltage ............................... –0.5V to V + 0.5V
Maximum Ratings
CC
Current into Outputs (LOW) ........................................ 20 mA
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Static Discharge Voltage .......................................... > 2001V
(per MIL-STD-883, Method 3015)
Storage Temperature .................................–65°C to +150°C
Latch-up Current .................................................... > 200 mA
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Operating Range
Supply Voltage on V Relative to GND ... –0.5V to +6.0V
CC
Ambient
Range
V
Speed
DC Voltage Applied to Outputs
in High-Z State ...................................–0.5V to V + 0.5V
CC
Temperature
CC
Industrial
–40°C to +85°C
5V ± 0.5V
10 ns
Electrical Characteristics (Over the Operating Range)
7C106D-10
7C1006D-10
Parameter
Description
Test Conditions
Unit
Min
2.4
Max
V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
I
I
= –4.0 mA
V
V
OH
OL
IH
OH
OL
V
V
V
I
= 8.0 mA
0.4
2.2
–0.5
–1
V
+ 0.5
V
CC
Input LOW Voltage
0.8
+1
+1
80
72
58
37
10
V
IL
Input Leakage Current
Output Leakage Current
GND < V < V
CC
µA
µA
mA
mA
mA
mA
mA
IX
I
I
I
GND < V < V , Output Disabled
–1
OZ
I
CC
V
Operating Supply Current
V
I
f = f
= Max,
100 MHz
83 MHz
66 MHz
40 MHz
CC
CC
CC
= 0 mA,
OUT
= 1/t
max
RC
I
I
Automatic CE Power-Down
Current—TTL Inputs
Max V , CE > V ,
CC IH
V
SB1
SB2
> V or V < V , f = f
IN
IH IN IL max
Automatic CE Power-Down
Current—CMOS Inputs
Max V , CE > V – 0.3V,
V
3
mA
CC
CC
> V – 0.3V or V < 0.3V, f=0
IN
CC IN
Note
3.
V
(min) = –2.0V and V (max) = V + 1V for pulse durations of less than 5 ns.
IH CC
IL
Document #: 38-05459 Rev. *E
Page 3 of 11
CY7C106D
CY7C1006D
Capacitance [4]
Parameter
Description
Test Conditions
Max
7
Unit
pF
C : Addresses Input Capacitance
T = 25°C, f = 1 MHz, V = 5.0V
IN
A
CC
C : Controls
10
10
pF
IN
C
Output Capacitance
pF
OUT
Thermal Resistance [4]
300-Mil
400-Mil
Unit
Parameter
Description
Test Conditions
Wide SOJ Wide SOJ
Θ
Θ
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
59.16
40.84
58.76
°C/W
°C/W
JA
Thermal Resistance
(Junction to Case)
40.54
JC
AC Test Loads and Waveforms [5]
ALL INPUT PULSES
3.0V
Z = 50Ω
90%
10%
90%
10%
OUTPUT
50Ω
GND
30 pF*
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
1.5V
Fall Time: ≤ 3 ns
Rise Time: ≤ 3 ns
(b)
(a)
High-Z characteristics:
R1 480Ω
5V
OUTPUT
R2
255Ω
5 pF
INCLUDING
JIG AND
SCOPE
(c)
Notes
4. Tested initially and after any design or process changes that may affect these parameters.
5. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load
shown in Figure (c).
Document #: 38-05459 Rev. *E
Page 4 of 11
CY7C106D
CY7C1006D
[6]
Switching Characteristics (Over the Operating Range)
7C106D-10
7C1006D-10
Parameter
Description
Unit
Min
Max
Read Cycle
[7]
t
V
(typical) to the first access
100
10
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
power
CC
t
t
t
t
t
t
t
t
t
t
t
Read Cycle Time
RC
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
10
AA
3
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
10
5
0
3
0
OE HIGH to High Z
5
5
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
PU
PD
CE HIGH to Power-Down
10
Write Cycle
t
t
t
t
t
t
t
t
t
t
Write Cycle Time
10
7
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WC
CE LOW to Write End
SCE
AW
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
7
0
HA
0
SA
7
PWE
SD
Data Set-Up to Write End
Data Hold from Write End
6
0
HD
WE HIGH to Low Z
3
LZWE
HZWE
WE LOW to High Z
5
Notes
6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
t
t
/I and 30-pF load capacitance.
OL OH
7.
8.
gives the minimum amount of time that the power supply should be at typical V values until the first memory access can be performed.
CC
POWER
, t
, and t
are specified with a load capacitance of 5 pF as in part (c) of “AC Test Loads and Waveforms ” on page 4. Transition is measured when the outputs
HZOE HZCE
HZWE
enter a high impedance state.
9. At any given temperature and voltage condition, t
is less than t
, t
is less than t
, and t
is less than t
for any given device.
HZCE
LZCE HZOE
LZOE
HZWE
LZWE
10. This parameter is guaranteed by design and is not tested.
11. The internal write time of the memory is defined by the overlap of CEand WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of these signals
can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
Document #: 38-05459 Rev. *E
Page 5 of 11
CY7C106D
CY7C1006D
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
for Data Retention
CC
Conditions
Min
Max
Unit
V
V
V
2.0
DR
I
Data Retention Current
V
= V = 2.0V, CE > V – 0.3V,
3
mA
CCDR
CC
DR
CC
V
> V – 0.3V or V < 0.3V
IN
CC IN
[4]
t
t
Chip Deselect to Data Retention Time
Operation Recovery Time
0
ns
ns
CDR
t
R
RC
Data Retention Waveform
DATA RETENTION MODE
> 2V
4.5V
4.5V
V
V
DR
CC
t
t
R
CDR
CE
Switching Waveforms
Read Cycle No.1 (Address Transition Controlled)
t
RC
ADDRESS
t
AA
t
OHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled)
ADDRESS
CE
t
RC
t
ACE
OE
t
HZOE
t
DOE
t
HZCE
t
LZOE
HIGH
IMPEDANCE
HIGH IMPEDANCE
DATA VALID
DATA OUT
t
LZCE
t
PD
ICC
t
V
CC
PU
50%
SUPPLY
CURRENT
50%
ISB
Notes
13. Full device operation requires linear V ramp from V to V
> 50 µs or stable at V > 50 µs.
CC(min)
CC
DR
CC(min)
14. tr < 3 ns for all speeds.
15. Device is continuously selected, OE and CE = V .
IL
16. WE is HIGH for read cycle.
Document #: 38-05459 Rev. *E
Page 6 of 11
CY7C106D
CY7C1006D
Switching Waveforms (continued)
Write Cycle No. 1 (CE Controlled)
t
WC
ADDRESS
CE
t
SCE
t
SA
t
t
HA
AW
t
PWE
WE
t
t
HD
SD
DATA IO
DATA VALID
Write Cycle No. 2 (WE Controlled, OE HIGH During Write)
t
WC
ADDRESS
t
SCE
CE
t
t
HA
AW
t
SA
t
PWE
WE
OE
t
t
SD
HD
DATA IO
DATA VALID
t
HZOE
Notes
18. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
19. Data IO is high impedance if OE = V
.
IH
Document #: 38-05459 Rev. *E
Page 7 of 11
CY7C106D
CY7C1006D
Switching Waveforms (continued)
Write Cycle No. 3 (WE Controlled, OE LOW)
t
WC
ADDRESS
CE
t
SCE
t
t
HA
AW
t
SA
t
PWE
WE
t
t
HD
SD
DATA VALID
DATA IO
t
t
LZWE
HZWE
Truth Table
CE
H
L
OE
X
WE
X
Input/Output
High Z
Mode
Power
Power-Down
Read
Standby (I
)
SB
L
H
Data Out
Data In
High Z
Active (I
Active (I
Active (I
)
CC
L
X
L
Write
)
CC
L
H
H
Selected, Outputs Disabled
)
CC
Ordering Information
Speed
Package
Diagram
Operating
Range
Package Type
(ns)
Ordering Code
CY7C106D-10VXI
CY7C1006D-10VXI
10
51-85032
51-85031
28-pin (400-Mil) Molded SOJ (Pb-free)
28-pin (300-Mil) Molded SOJ (Pb-free)
Industrial
Please contact your local Cypress sales representative for availability of these parts.
Document #: 38-05459 Rev. *E
Page 8 of 11
CY7C106D
CY7C1006D
Package Diagrams
Figure 1. 28-pin (300-Mil) Molded SOJ, 51-85031
NOTE :
1. JEDEC STD REF MO088
2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH
MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.006 in (0.152 mm) PER SIDE
MIN.
3. DIMENSIONS IN INCHES
MAX.
DETAIL
A
PIN 1 ID
EXTERNAL LEAD DESIGN
14
1
0.291
0.300
0.330
0.350
0.026
0.032
0.013
0.019
15
28
0.014
0.020
OPTION 1
OPTION 2
0.697
0.713
SEATING PLANE
0.120
0.140
0.007
0.013
0.004
A
0.262
0.272
0.050
TYP.
0.025 MIN.
51-85031-*C
Document #: 38-05459 Rev. *E
Page 9 of 11
CY7C106D
CY7C1006D
Package Diagrams
Figure 2. 28-pin (400-Mil) Molded SOJ, 51-85032
PIN 1 I.D
1
14
MIN.
MAX.
DIMENSIONS IN INCHES
.435
.445
.395
.405
15
28
.720
.730
SEATING PLANE
.128
.148
.007
.013
0.004
.026
.032
.360
.380
51-85032-*B
.025 MIN.
.015
.020
All product and company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05459 Rev. *E
Page 10 of 11
© Cypress Semiconductor Corporation, 2006-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for
the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended
to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C106D
CY7C1006D
Document History Page
Document Title: CY7C106D/CY7C1006D, 1-Mbit (256K x 4) Static RAM
Document Number: 38-05459
Orig. of
REV.
ECN NO. Issue Date
Description of Change
Advance information data sheet for C9 IPP
I ,I ,I Specs are modified as per EROS (Spec # 01-2165)
CC SB1 SB2
Change
**
201560
233693
See ECN
See ECN
SWI
*A
RKF
Pb-free offering in the ‘ordering information’
*B
262950
See ECN
RKF
Added T Spec in Switching Characteristics table
Shaded ‘Ordering Information’
power
*C
*D
See ECN See ECN
RKF
VKN
Reduced Speed bins to -10 and -12 ns
560995
See ECN
Converted from Preliminary to Final
Removed Commercial Operating range
Removed 12 ns speed bin
Added I values for the frequencies 83MHz, 66MHz and 40MHz
CC
Updated Thermal Resistance table
Updated Ordering Information table
Changed Overshoot spec from V +2V to V +1V in footnote #3
CC
CC
*E
802877
See ECN
VKN
Changed I spec from 60 mA to 80 mA for 100MHz, 55 mA to 72 mA for
83MHz, 45 mA to 58 mA for 66MHz, 30 mA to 37 mA for 40MHz
CC
Document #: 38-05459 Rev. *E
Page 11 of 11
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