TMS320 SECOND-GENERATION
DIGITAL SIGNAL PROCESSORS
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
†
68-Pin GB Package
(Top View)
•
•
•
80-ns Instruction Cycle Time
1
2
3
4
5
6
7
8
9 10 11
544 Words of On-Chip Data RAM
4K Words of On-Chip Secure Program
EPROM (TMS320E25)
A
B
C
D
E
F
•
4K Words of On-Chip Program ROM
(TMS320C25)
•
•
•
•
128K Words of Data/Program Space
32-Bit ALU/Accumulator
G
H
J
16 × 16-Bit Multiplier With a 32-Bit Product
Block Moves for Data/Program
Management
K
L
•
Repeat Instructions for Efficient Use of
Program Space
†
68-Pin FN and FZ Packages
(Top View)
•
•
Serial Port for Direct Codec Interface
Synchronization Input for Synchronous
Multiprocessor Configurations
•
Wait States for Communication to Slow
Off-Chip Memories/Peripherals
9
8
7
6
5
4
3
2
1
68 67 66 65 64 63 62 61
60
59
V
IACK
MSC
10
SS
D7
D6
D5
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
58 CLKOUT1
57 CLKOUT2
56 XF
•
•
•
On-Chip Timer for Control Operations
Single 5-V Supply
D4
D3
D2
D1
D0
55 HOLDA
54
53
52
51
50
49
48
47
46
45
44
DX
Packaging: 68-Pin PGA, PLCC, and
CER-QUAD
FSX
X2 CLKIN
X1
SYNC
INT0
INT1
INT2
BR
•
68-to-28 Pin Conversion Adapter Socket for
EPROM Programming
STRB
R/W
PS
IS
DS
V
DR
CC
•
•
Commercial and Military Versions Available
FSR
NMOS Technology:
— TMS32020 . . . . . . . . . 200-ns cycle time
A0 26
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
V
SS
• CMOS Technology:
— TMS320C25 . . . . . . . . 100-ns cycle time
— TMS320E25 . . . . . . . . 100-ns cycle time
— TMS320C25-50 . . . . . . 80-ns cycle time
description
This data sheet provides complete design documentation for the second-generation devices of the TMS320
family. This facilitates the selection of the devices best suited for user applications by providing all specifications
and special features for each TMS320 member. This data sheet is divided into four major sections: architecture,
electrical specifications (NMOS and CMOS), timing diagrams, and mechanical data. In each of these sections,
generic information is presented first, followed by specific device information. An index is provided for quick
reference to specific information about a device.
ADVANCE INFORMATION concerns new products in the
Copyright 1991, Texas Instruments Incorporated
sampling or preproduction phase of development.
Characteristic data and other specifications are subject to
change without notice.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
1
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
description
The TMS320 family of 16/32-bit single-chip digital signal processors combines the flexibility of a high-speed
controller with the numerical capability of an array processor, thereby offering an inexpensive alternative to
multichip bit-slice processors. The highly paralleled architecture and efficient instruction set provide speed and
flexibility to produce a MOS microprocessor family that is capable of executing more than 12.5 MIPS (million
instructions per section). The TMS320 family optimizes speed by implementing functions in hardware that other
processors implement through microcode or software. This hardware-intensive approach provides the design
engineer with processing power previously unavailable on a single chip.
The TMS320 family consists of three generations of digital signal processors. The first generation contains the
TMS32010 and its spinoffs. The second generation includes the TMS32020, TMS320C25, and TMS320E25,
which are described in this data sheet. The TMS320C30 is a floating-point DSP device designed for even higher
performance. Many features are common among the TMS320 processors. Specific features are added in each
processor to provide different cost/performance tradeoffs. Software compatibility is maintained throughout the
family to protect the user’s investment in architecture. Each processor has software and hardware tools to
facilitate rapid design.
introduction
The TMS32010, the first NMOS digital signal processor in the TMS320 family, was introduced in 1983. Its
powerful instruction set, inherent flexibility, high-speed number-crunching capabilities, and innovative
architecture have made this high-performance, cost-effective processor the ideal solution to many
telecommunications, computer, commercial, industrial, and military applications. Since that time, the
TMS320C10, a low-power CMOS version of the industry-standard TMS32010, and other spinoff devices have
been added to the first generation of the TMS320 family.
The second generation of the TMS320 family (referred to as TMS320C2x) includes four members, the
TMS32020, TMS320C25, TMS320C25-50, and TMS320E25. The architecture of these devices is based upon
that of the TMS32010.
The TMS32020, processed in NMOS technology, is source-code compatible with he TMS32010 and in many
applications is capable of two times the throughput of the first-generation devices. Its enhanced instruction set
(109 instructions), large on-chip data memory (544 words), large memory spaces, on-chip serial port, and
hardware timer make the TMS32020 a powerful addition to the TMS320 family.
TheTMS320C25isthesecondmemberoftheTMS320secondgeneration. ItisprocessedinCMOStechnology,
is capable of an instruction cycle time of 100 ns, and is pin-for-pin and object-code compatible with the
TMS32020. The TMS320C25’s enhanced feature set greatly increases the functionality of the device over the
TMS32020. Enhancements included 24 additional instructions (133 total), eight auxiliary registers, an
eight-level hardware stack, 4K words of on-chip program ROM, a bit-reversed indexed-addressing mode, and
the low-power dissipation inherent to the CMOS process. An extended-temperature range version
(TMS320C25GBA) is also available.
The TMS320C25-50 is a high-speed version of the TMS320C25. It is capable of an instruction cycle time of less
than80ns. Itisarchitecturallyidenticaltotheoriginal40-MHzversionoftheTMS320C25and, thus, ispin-for-pin
and object-code compatible with the TMS320C25.
The TMS320E25 is identical to the TMS320C25, with the exception that the on-chip 4K-word program ROM is
replaced with a 4K-word on-chip program EPROM. On-chip EPROM allows realtime code development and
modification for immediate evaluation of system performance.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
3
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
Key Features: TMS32020
+5 V
GND
•
•
•
200-ns Instruction Cycle Time
544 Words of On-Chip Data RAM
Interrupts
256-Word 288-Word
128K Words of Total Data/Program
Memory Space
Data (16)
Data/Prog
RAM
Data
RAM
Multi-
•
Wait States for Communication to Slower Off-Chip
Memories
Processor
Multiplier
Interface
Serial
•
•
•
•
•
•
Source Code Compatible With the TMS320C1x
Single-Cycle Multiply/Accumulate Instructions
Repeat Instructions
32-BIT ALU/ACC
Shifters
Interface
Address (16)
Timer
Global Data Memory Interface
Block Moves for Data/Program Management
Five Auxiliary Registers With Dedicated
Arithmetic Unit
•
•
•
•
On-Chip Clock Generator
Single 5-V Supply
•
Serial Port for Multiprocessing or Interfacing
to Codecs, Serial Analog-to-Digital
Converters, etc.
NMOS Technology
68-Pin Grid Array (PGA) Package
Key Features: TMS320C25, TMS320C25-50, TMS320E25
+5 V
GND
• 80-ns Instruction Cycle Time (TMS320C25-50)
• 100-ns Instruction Cycle Time (TMS320C25)
• 4K Words of On-Chip Secure Program EPROM
(TMS320E25)
256-Word 288-Word
Data/Prog
RAM
Interrupts
MP/MC
Data (16)
Data
RAM
• 4K Words of On-Chip Program
ROM (TMS320C25)
Multi-
Processor
4K-Words
ROM/EPROM
• 544 Words of On-Chip RAM
• 128K Words of Total Program/Data
Interface
Multiplier
Memory Space
Serial
• Wait States for Communications to
32-Bit ALU/ACC
Shifters
Interface
Slower Off-Chip Memories
• Object-Code Compatible With the TMS32020
Address (16)
Timer
• Source-Code Compatible With TMS320C1x
• 24 Additional Instructions to Support
Adaptive Filtering, FFTs, and
• On-Chip Clock Generator
• Single 5-V Supply
Extended-Precision Arithmetic
• Block Moves for Data/Program Management
• Single-Cycle Multiply/Accumulate Instructions
• Internal Security Mechanism (TMS320E25)
• 68-to-28 Pin Conversion Adapter Socket
• CMOS Technology
• Eight Auxiliary Registers With Dedicated
Arithmetic Unit
• Bit-Reversed Indexed-Addressing Mode for
• 68-Pin Grid Array (PGA) Package
Radix-2 FFTS
(TMS320C25)
• Double-Buffered Serial Port
• 68-Lead Plastic Leaded Chip Carrier (PLCC)
Package (TMS320C25, TMS320C25-50)
• 68-Lead CER-QUAD Package (TMS320E25)
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
4
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
Table 1 provides an overview of the second-generation TMS320 processors with comparisons of memory, I/O,
cycle timing, power, package type, technology, and military support. For specific availability, contact the nearest
TI Field Sales Office.
Table 1. TMS320 Second-Generation Device Overview
MEMORY
PACKAGE
TYPE
CYCLE
TIME
(ns)
TYP
POWER
(mW)
†
I/O
ON-CHIP
OFF-CHIP
DEVICE
TIMER
RAM ROM/EPROM PROG DATA
SER
YES
YES
YES
YES
PAR
DMA
YES
CON
CON
CON
PGA PLCC CER-QUAD
‡
(NMOS)
(CMOS)
(CMOS)
(CMOS)
544
544
544
544
—
4K
4K
4K
64K
64K
64K
64K
64K
64K
64K
64K
YES
YES
YES
YES
200
100
80
1250
500
500
500
68
68
—
—
—
68
68
—
—
—
—
68
TMS32020
16 × 16
16 × 16
16 × 16
16 × 16
‡
TMS320C25
§
TMS320C25-50
§
TMS320E25
100
†
‡
§
SER = serial; PAR = parallel; DMA = direct memory access; CON = concurrent DMA.
Military version available; contact nearest TI Field Sales Office for availability.
Military version planned; contact nearest TI Field Sales Office for details.
architecture
The TMS320 family utilizes a modified Harvard architecture for speed and flexibility. In a strict Harvard
architecture, program and data memory lie in two separate spaces, permitting a full overlap of instruction fetch
and execution. The TMS320 family’s modification of the Harvard architecture allows transfers between program
and data spaces, thereby increasing the flexibility of the device. This modification permits coefficients stored
in program memory to be read into the RAM, eliminating the need for a separate coefficient ROM. It also makes
available immediate instructions and subroutines based on computed values.
Increased throughput on the TMS320C2x devices for many DSP applications is accomplished by means of
single-cycle multiply/accumulate instructions with a data move option, up to eight auxiliary registers with a
dedicated arithmetic unit, and faster I/O necessary for data-intensive signal processing.
The architectural design of the TMS320C2x emphasizes overall speed, communication, and flexibility in
processor configuration. Control signals and instructions provide floating-point support, block-memory
transfers, communication to slower off-chip devices, and multiprocessing implementations.
32-bit ALU/accumulator
The 32-bit Arithmetic Logic Unit (ALU) and accumulator perform a wide range of arithmetic and logical
instructions, the majority of which execute in a single clock cycle. The ALU executes a variety of branch
instructions dependent on the status of the ALU or a single bit in a word. These instructions provide the following
capabilities:
•
•
•
Branch to an address specified by the accumulator
Normalize fixed-point numbers contained in the accumulator
Test a specified bit of a word in data memory
One input to the ALU is always provided from the accumulator, and the other input may be provided from the
Product Register (PR) of the multiplier or the input scaling shifter which has fetched data from the RAM on the
databus. AftertheALUhasperformedthearithmeticorlogicaloperations, theresultisstoredintheaccumulator.
The 32-bit accumulator is split into two 16-bit segments for storage in data memory. Additional shifters at the
output of the accumulator perform shifts while the data is being transferred to the data bus for storage. The
contents of the accumulator remain unchanged.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
5
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
functional block diagram (TMS320C2x)
SYNC
IS
DS
Program Bus
16
PS
16
16
16
PFC(16)
QIR(16)
IR(16)
R/W
STRB
READY
BR
16
STO(16)
ST1(16)
RPTC(8)
IFR(6)
MUX
16
16
XF
16
HOLD
HOLDA
MSC
BIO
MCS(16)
PC(16)
DR
CLKR
FSR
DX
CLKX
FSX
RS
IACK
16
16
16
Address
Stack
16
16
16
MP/MC
(8 x 16)
3
RSR(16)
XSR(16)
DRR(16)
DXR(16)
TIM(16)
PRD(16)
IMR(6)
Program
ROM/
EPROM
(4096 × 16)
Instruction
16
INT(2-0)
16
16
16
A15-A0
D15-D0
16
16
16
6
16
16
8
GREG(8)
16
16
16
Program Bus
Data Bus
16
16
16
16
16
16
16
9
3
AR0(16)
AR1(16)
AR2(16)
AR3(16)
AR4(16)
AR5(16)
AR6(16)
AR7(16)
TR(16)
7 LSB
From IR
MUX
3
ARP(3)
DP(9)
16
Multiplier
Shifter(0-16)
32
9
3
PR(32)
32
16
ARB(3)
Shifter(-6, 0, 1, 4)
32
16
16
16
MUX
3
ARAU(16)
MUX
32
16
MUX
16
MUX
16
32
ALU(32)
32
Block B2
DATA/PROG
(32 × 16)
Data RAM
Block B1
(256 × 16)
RAM (256 × 16)
C
Block B0
ACCH(16)
32
ACCL(16)
16
MUX
16
†
Shifters (0-7)
16
16
16
Data Bus
LEGEND:
ACCH
ACCL
ALU
ARAU
ARB
ARP
DP
=
Accumulator high
Accumulator low
Arithmetic logic unit
Auxiliary register arithmetic unitMCS
Auxiliary register pointer buffer
Auxiliary register pointer
Data memory page pointer
Serial port data receive registerTIM
Serial port data transmit register
IFR
IMR
IR
=
=
=
Interrupt flag register
Interrupt mask register
Instruction register
GREG
Queue instruction register
Product register
Period register for timer
ST0, ST1
PC
=
=
=
Program counter
Prefetch counter
Repeat instruction counter
=
=
=
=
=
=
=
=
PFC
RPTC
=
RSR
XSR
AR0-AR7
=
Microcall stack
Global memory allocation register
QIR
PR
PRD
=
=
=
=
=
=
=
=
=
Serial port receive shift register
Serial port transmit shift register
Auxiliary registers
Status registers
Carry bit
DRR
DXR
Timer
Temporary register
TR
=
C
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
6
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
scaling shifter
The TMS320C2x scaling shifter has 16-bit input connected to the data bus and a 32-bit output connected to the
ALU. The scaling shifter produces a left shift of 0 to 16 bits on the input data, as programmed in the instruction.
The LSBs of the output are filled with zeroes, and the MSBs may be either filled with zeroes or sign-extended,
depending upon the status programmed into the SXM (sign-extension mode) bit of status register ST1.
16 × 16-bit parallel multiplier
The 16 × 16-bit hardware multiplier is capable of computing a signed or unsigned 32-bit product in a single
machine cycle. The multiplier has the following two associated registers.
•
•
A 16-bit Temporary Register (TR) that holds one of the operands for the multiplier, and
A 32-bit Product Register (PR) that holds the product.
Incorporated into the instruction set are single-cycle multiply/accumulate instructions that allow both operands
to be processed simultaneously. The data for these operations may reside anywhere in internal or external
memory, and can be transferred to the multiplier each cycle via the program and data buses.
Four product shift modes are available at the Product Register (PR) output that are useful when performing
multiply/accumulate operations, fractional arithmetic, or justifying fractional products.
timer
The TMS320C2x provides a memory-mapped 16-bit timer for control operations. The on-chip timer (TIM)
register is a down counter that is continuously clocked by CLKOUT1 on the TMS320C25. The timer is clocked
byCLKOUT1/4ontheTMS32020. Atimerinterrupt(TINT)isgeneratedeverytimethetimerdecrementstozero.
The timer is reloaded with the value contained in the period (PRD) register within the next cycle after it reaches
zero so that interrupts may be programmed to occur at regular intervals of PRD + 1 cycles of CLKOUT 1 on the
TMS320C25 or 4 × PRD × CLKOUT 1 cycles on the TMS32020.
memory control
The TMS320C2x provides a total of 544 16-bit words of on-chip data RAM, divided into three separate blocks
(B0, B1, and B2). Of the 544 words, 288 words (blocks B1 and B2) are always data memory, and 256 words
(block B0) are programmable as either data or program memory. A data memory size of 544 words allows the
TMS320C2x to handle a data array of 512 words (256 words if on-chip RAM is used for program memory), while
still leaving 32 locations for intermediate storage. When using block B0 as program memory, instructions can
be downloaded from external program memory into on-chip RAM and then executed.
When using on-chip program RAM, ROM, EPROM, or high-speed external program memory, the TMS320C2x
runs at full speed without wait states. However, the READY line can be used to interface the TMS320C2x to
slower, less-expensive external memory. Downloading programs from slow off-chip memory to on-chip program
RAM speeds processing while cutting system costs.
The TMS320C2x provides three separate address spaces for program memory, data memory, and I/O. The
on-chip memory is mapped into either the 64K-word data memory or program memory space, depending upon
the memory configuration (see Figure 1). The CNFD (configure block B0 as data memory) and CNFP (configure
block B0 as program memory) instructions allow dynamic configuration of the memory maps through software.
Regardless of the configuration, the user may still execute from external program memory.
The TMS320C2x has six registers that are mapped into the data memory space: a serial port data receive
register, serial port data transmit register, timer register, period register, interrupt mask register, and global
memory allocation register.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
7
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
Program
Program
Data
0(0000h)
Interrupts
and Reserved
(External)
31(001Fh)
0(0000h)
0(0000h)
Interrupts
and Reserved
(On-Chip
On-Chip
Memory-Mapped
Registers
ROM/EPROM)
5(0005h)
6(0006h)
31(001Fh)
32(0020h)
32(0020h)
Page 0
Reserved
On-Chip
ROM/EPROM
95(005Fh)
96(0060h)
4015(0FAFh)
4016(0FB0h)
On-Chip
Block B2
127(007Fh)
128(0080h)
Reserved
4095(0FFFh)
4096(1000h)
Pages 1-3
Pages 4-5
Reserved
511(01FFh)
512(0200h)
External
On-Chip
Block B0
767(02FFh)
768(0300h)
On-Chip
Block B1
Pages 6 -7
External
1023(03FFh)
1024(0400h)
External
Pages 8 -511
65,535(0FFFFh)
65,535(0FFFFh)
65,535(FFFFh)
If MP/MC = 1
If MP/MC = 0
(Microcomputer Mode on TMS320C25)
(Microprocessor Mode)
(a) Memory Maps After a CNFD Instruction
Program
Program
Data
0(0000h)
0(0000h)
0(0000h)
Interrupts
and Reserved
(On-Chip
Interrupts
and Reserved
(External)
On-Chip
Memory-Mapped
Registers
ROM/EPROM)
31(001Fh)
32(0020h)
5(0005h)
6(0006h)
31(001Fh)
32(0020h)
On-Chip
ROM/EPROM
Page 0
Reserved
95(005Fh)
96(0060h)
4015(0FAFh)
4016(0FB0h)
On-Chip
Block B2
Reserved
4095(0FFFh)
4096(1000h)
127(007Fh)
128(0080h)
Reserved
Pages 1-3
Pages 4-5
511(01FFh)
512(0200h)
External
Does Not
Exist
767(02FFh)
768(0300h)
External
On-Chip
Block B1
Pages 6 -7
1023(03FFh)
1024(0400h)
65,279(0FEFFh)
65,280(0FF00h)
65,279(0FEFFh)
65,280(0FF00h)
External
Pages 8 -511
On-Chip
Block B0
On-Chip
Block B0
65,535(0FFFFh)
65,535(0FFFFh)
65,535(0FFFFh)
If MP/MC = 1
(Microprocessor Mode)
If MP/MC = 0
(Microcomputer Mode on TMS320C25)
(b) Memory Maps After a CNFP Instruction
Figure 1. Memory Maps
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
8
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
interrupts and subroutines
The TMS320C2x has three external maskable user interrupts INT2-INT0, available for external devices that
interrupt the processor. Internal interrupts are generated by the serial port (RINT and XINT), by the timer (TINT),
and by the software interrupt (TRAP) instruction. Interrupts are prioritized with reset (RS) having the highest
priority and the serial port transmit interrupt (XINT) having the lowest priority. All interrupt locations are on
two-word boundaries so that branch instructions can be accommodated in those locations if desired.
A built-in mechanism protects multicycle instructions from interrupts. If an interrupt occurs during a multicycle
instruction, the interrupt is not processed until the instruction is completed. This mechanism applies to
instructions that are repeated and to instructions that become multicycle due to the READY signal.
external interface
The TMS320C2x supports a wide range of system interfacing requirements. Program, data, and I/O address
spaces provide interface to memory and I/O, thus maximizing system throughput. I/O design is simplified by
having I/O treated the same way as memory. I/O devices are mapped into the I/O address space using the
processor’s external address and data buses in the same manner as memory-mapped devices. Interface to
memory and I/O devices of varying speeds is accomplished by using the READY line. When transactions are
made with slower devices, the TMS320C2x processor waits until the other device completes its function and
signals the processor via the READY line. Then, the TMS320C2x continues execution.
A full-duplex serial port provides communication with serial devices, such as codecs, serial A/D converters, and
other serial systems. The interface signals are compatible with codecs and many other serial devices with a
minimum of external hardware. The serial port may also be used for intercommunication between processors
in multiprocessing applications.
Theserialporthastwomemory-mappedregisters:thedatatransmitregister(DXR)andthedatareceiveregister
(DRR). Both registers operate in either the byte mode or 16-bit word mode, and may be accessed in the same
manner as any other data memory location. Each register has an external clock, a framing synchronization
pulse, and associated shift registers. One method of multiprocessing may be implemented by programming one
devicetotransmitwhiletheothersareinthereceivemode. TheserialportontheTMS320C25isdouble-buffered
and fully static.
multiprocessing
The flexibility of the TMS320C2x allows configurations to satisfy a wide range of system requirements and can
be used as follows:
•
•
•
•
A standalone processor
A multiprocessor with devices in parallel
A slave/host multiprocessor with global memory space
A peripheral processor interfaced via processor-controlled signals to another device.
For multiprocessing applications, the TMS320C2x has the capability of allocating global data memory space
and communicating with that space via the BR (bus request) and READY control signals. Global memory is data
memory shared by more than one processor. Global data memory access must be arbitrated. The 8-bit
memory-mapped GREG (global memory allocation register) specifies part of the TMS320C2x’s data memory
as global external memory. The contents of the register determine the size of the global memory space. If the
current instruction addresses an operand within that space, BR is asserted to request control of the bus. The
length of the memory cycle is controlled by the READY line.
The TMS320C2x supports DMA (direct memory access) to its external program/data memory using the HOLD
and HOLDA signals. Another processor can take complete control of the TMS320C2x’s external memory by
asserting HOLD low. This causes the TMS320C2x to place its address data and control lines in a
high-impedance state, and assert HOLDA. On the TMS320C2x, program execution from on-chip ROM may
proceed concurrently when the device is in the hold mode.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
9
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
instruction set
The TMS320C2x microprocessor implements a comprehensive instruction set that supports both
numeric-intensive signal processing operations as well as general-purpose applications, such as
multiprocessing and high-speed control. The TMS32020 source code is upward-compatible with TMS320C25
source code. TMS32020 object code runs directly on the TMS320C25.
For maximum throughput, the next instruction is prefetched while the current one is being executed. Since the
same data lines are used to communicate to external data/program or I/O space, the number of cycles may vary
depending upon whether the next data operand fetch is from internal or external memory. Highest throughput
is achieved by maintaining data memory on-chip and using either internal or fast external program memory.
addressing modes
The TMS320C2x instruction set provides three memory addressing modes: direct, indirect, and immediate
addressing.
Both direct and indirect addressing can be used to access data memory. In direct addressing, seven bits of the
instruction word are concatenated with the nine bits of the data memory page pointer to form the 16-bit data
memory address. Indirect addressing accesses data memory through the auxiliary registers. In immediate
addressing, the data is based on a portion of the instruction word(s).
In direct memory addressing, the instruction word contains the lower seven bits of the data memory address.
This field is concatenated with the nine bits of the data memory page pointer to form the full 16-bit address. Thus,
memory is paged in the direct addressing mode with a total of 512 pages, each page containing 128 words.
Up to eight auxiliary registers (AR0-AR7) provide flexible and powerful indirect addressing (five on the
TMS32020, eight on the TMS320C25). To select a specific auxiliary register, the Auxiliary Register Pointer
(ARP) is loaded with a value from 0 to 7 for AR0 through AR7, respectively.
Thereareseventypesofindirectaddressing:auto-incrementorauto-decrement, post-indexingbyeitheradding
or subtracting the contents of AR0, single indirect addressing with no increment or decrement, and bit-reversal
addressing (used in FFTs on the TMS320C25 only) with increment or decrement. All operations are performed
on the current auxiliary register in the same cycle as the original instruction, following which the current auxiliary
register and ARP may be modified.
repeat feature
A repeat feature, used with instructions such as multiply/accumulates, block moves, I/O transfers, and table
read/writes, allows a single instruction to be performed up to 256 times. The repeat counter (RPTC) is loaded
with either a data memory value (RPT instruction) or an immediate value (RPTK instruction). The value of this
operand is one less than the number of times that the next instruction is executed. Those instructions that are
normally multicycle are pipelined when using the repeat feature, and effectively become single-cycle
instructions.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
10
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
instruction set summary
Table 2 lists the symbols and abbreviations used in Table 3, the TMS320C25 instruction set summary. Table 3
consists primarily of single-cycle, single-word instructions. Infrequently used branch, I/O, and CALL instructions
are multicycle. The instruction set summary is arranged according to function and alphabetized within each
†
functional grouping. The symbol ( ) indicates those instructions that are not included in the TMS320C1x
‡
instruction set. The symbol ( ) indicates instructions that are not included in the TMS32020 instruction set.
Table 2. Instruction Symbols
SYMBOL
DEFINITION
4-bit field specifying a bit code
2-bit field specifying compare mode
Data memory address field
B
CM
D
FO
I
Format status bit
Addressing mode bit
K
Immediate operand field
PA
Portaddress(PA0throughPA15arepredefinedassemblersymbols
equal to 0 through 15, respectively.)
2-bit field specifying P register output shift code
3-bit operand field specifying auxiliary register
4-bit left-shift code
PM
AR
S
X
3-bit accumulator left-shift field
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
11
TMS320C25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
Table 3. TMS320C25 Instruction Set Summary
ACCUMULATOR MEMORY REFERENCE INSTRUCTIONS
INSTRUCTION BIT CODE
NO.
WORDS
MNEMONIC
DESCRIPTION
15 14 13 12 11 10
9
8
7
0
I
6
5
4
3
1
2
1
0
ABS
ADD
Absolute value of accumulator
Add to accumulator with shift
Add to accumulator with carry
Add to high accumulator
1
1
1
1
1
1
0
0
0
1
1
0
1
1
1
0
0
0
0
0
0
0
0
0
0
1
1
1
0
0
0
1
0
1
1
D
D
S
‡
ADDC
0
1
1
0
0
1
1
0
0
1
0
0
I
ADDH
I
D
‡
ADDK
ADDS
Add to accumulator short immediate
K
Add to low accumulator with sign
extension suppressed
1
1
0
0
1
1
0
0
0
0
1
1
0
0
0
1
1
0
I
I
D
D
Add to accumulator with shift specified by
T register
ADDT
†
S
ADLK
Add to accumulator long immediate with shift
AND with accumulator
2
1
2
1
1
1
1
0
1
1
0
1
1
1
1
1
0
1
0
0
0
0
1
0
1
0
1
0
0
0
0
I
0
0
0
0
D
0
0
0
1
0
AND
1
1
1
1
1
1
0
0
†
†
ANDK
CMPL
LAC
AND immediate with accumulator with shift
Complement accumulator
0
0
I
0
0
0
1
0
0
1
1
0
1
0
1
S
S
Load accumulator with shift
D
LACK
Load accumulator immediate short
1
0
0
0
1
1
0
0
K
Load accumulator with shift specified by
T register
†
LACT
1
0
1
0
0
I
D
†
LALK
Load accumulator long immediate with shift
Negate accumulator
2
1
1
1
2
1
1
1
1
1
1
1
0
1
1
1
0
0
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
0
0
0
1
0
0
0
0
0
0
1
I
0
0
X
0
1
X
0
0
X
0
0
0
0
0
0
0
1
1
1
1
0
S
S
†
NEG
1
1
1
1
1
1
1
1
0
0
0
1
†
NORM
OR
Normalize contents of accumulator
OR with accumulator
D
0
†
ORK
OR immediate with accumulator with shift
Rotate accumulator left
0
0
0
I
0
0
0
0
1
1
0
1
1
1
1
1
0
0
0
1
0
1
‡
ROL
1
1
1
0
1
1
1
1
0
0
0
0
‡
ROR
Rotate accumulator right
SACH
SACL
Store high accumulator with shift
Store low-order accumulator with shift
X
X
D
D
I
Subtract from accumulator long immediate
with shift
SBLK†
2
1
1
0
1
0
0
0
0
0
0
1
1
S
S
†
SFL
Shift accumulator left
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
0
1
1
1
1
0
0
0
0
0
0
0
0
0
1
0
0
0
0
1
1
1
1
1
1
0
0
0
0
I
0
0
0
0
1
1
1
1
0
0
0
0
0
1
†
SFR
Shift accumulator right
SUB
Subtract from accumulator with shift
Subtract from accumulator with borrow
Conditional subtract
D
D
D
D
‡
SUBB
1
0
0
1
1
1
1
1
1
1
0
0
1
1
0
1
I
SUBC
SUBH
I
Subtract from high accumulator
Subtract from accumulator short immediate
I
‡
SUBK
K
Subtract from low accumulator with sign
extension suppressed
SUBS
1
0
1
0
0
0
1
0
1
I
D
†
‡
These instructions are not included in the TMS320C1x instruction set.
These instructions are not included in the TMS32020 instruction set.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
12
TMS320C25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
Table 3. TMS320C25 Instruction Set Summary (continued)
ACCUMULATOR MEMORY REFERENCE INSTRUCTIONS
INSTRUCTION BIT CODE
NO.
WORDS
MNEMONIC
DESCRIPTION
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
Subtract from accumulator with shift specified by
T register
†
SUBT
1
1
2
0
0
1
1
1
1
0
0
0
0
0
1
0
1
1
1
1
0
I
D
XOR
Exclusive-OR with accumulator
0
0
I
D
0
Exclusive-OR immediate with accumulator with
shift
†
XORK
0
0
0
0
0
0
0
1
0
1
0
0
0
S
ZAC
Zero accumulator
1
1
1
0
1
1
0
0
0
0
1
0
0
0
1
0
0
0
0
I
0
ZALH
Zero low accumulator and load high accumulator
D
Zero low accumulator and load high accumulator
with rounding
‡
ZALR
1
1
0
0
1
1
1
0
1
0
1
0
0
0
1
0
1
1
I
I
D
D
Zero accumulator and load low accumulator with
sign extension suppressed
ZALS
AUXILIARY REGISTERS AND DATA PAGE POINTER INSTRUCTIONS
INSTRUCTION BIT CODE
NO.
WORDS
MNEMONIC
DESCRIPTION
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
‡
ADRK
Add to auxiliary register short immediate
1
1
0
1
1
1
1
1
1
0
K
Compare auxiliary register with auxiliary
register AR0
†
CMPR
1
1
0
0
1
1
1
0
0
I
1
0
1
0
0
CM
LAR
Load auxiliary register
1
1
1
1
1
2
1
1
1
0
1
0
0
1
1
0
0
0
0
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
1
1
1
0
1
1
0
1
1
1
1
0
0
0
0
1
0
0
0
1
R
D
K
1
LARK
LARP
LDP
Load auxilliary register short immediate
Load auxilliary register pointer
Load data memory page pointer
Load data memory page pointer immediate
Load auxiliary register long immediate
Modify auxiliary register
R
1
0
0
0
1
0
1
I
0
0
0
0
0
R
0
1
0
D
LDPK
DP
0
†
LRLK
MAR
SAR
0
I
0
0
0
R
1
1
0
1
1
D
D
Store auxiliary register
I
R
‡
SBRK
Subtract from auxiliary register short immediate
1
K
†
‡
These instructions are not included in the TMS320C1x instruction set.
These instructions are not included in the TMS32020 instruction set.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
13
TMS320C25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
Table 3. TMS320C25 Instruction Set Summary (continued)
T REGISTER, P REGISTER, AND MULTIPLY INSTRUCTIONS
INSTRUCTION BIT CODE
NO.
WORDS
MNEMONIC
DESCRIPTION
15 14 13 12 11 10
9
1
1
0
0
8
0
1
0
1
7
0
I
6
5
4
3
2
1
0
APAC
Add P register to accumulator
Load high P register
1
1
1
1
1
0
0
0
1
1
0
0
0
0
1
1
0
1
1
1
1
0
1
1
1
0
1
1
0
0
1
0
1
0
1
†
LPH
D
LT
Load T register
I
D
D
LTA
Load T register and accumulate previous product
I
Load T register, accumulate previous product,
and move data
LTD
1
1
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
0
I
I
D
D
Load T register and store P register in
accumulator
†
LTP
†
LTS
Load T register and subtract previous product
Multiply and accumulate
1
2
2
0
0
0
1
1
1
0
0
0
1
1
1
1
1
1
0
1
1
1
0
0
1
1
0
I
I
I
D
D
D
†
MAC
†
MACD
Multiply and accumulate with data move
Multiply (with T register, store product in
P register)
MPY
1
0
0
1
1
1
1
1
0
0
0
1
0
0
I
I
D
D
‡
MPYA
Multiply and accumulate previous product
Multiply immediate
1
1
1
1
1
1
1
1
1
1
1
0
1
0
1
1
1
0
0
1
0
0
0
0
0
1
1
1
1
1
1
0
1
1
1
1
0
0
0
1
1
0
1
0
MPYK
K
MPYS‡
MPYU‡
Multiply and subtract previous product
Multiply unsigned
1
0
0
0
1
1
0
1
1
1
1
1
1
1
1
1
1
1
0
1
1
1
1
1
1
0
0
1
1
1
1
0
0
1
0
1
1
1
0
0
1
0
0
1
0
I
I
D
D
PAC
Load accumulator with P register
Subtract P register from accumulator
Store high P register
0
0
I
0
0
0
0
1
1
0
1
1
0
1
0
0
SPAC
0
‡
SPH
D
‡
SPL
Store low P register
I
D
†
SPM
Set P register output shift mode
Square and accumulate
0
I
0
0
0
1
0
PM
†
†
SQRA
SQRS
D
D
Square and subtract previous product
I
†
‡
These instructions are not included in the TMS320C1x instruction set.
These instructions are not included in the TMS32020 instruction set.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
14
TMS320C25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
Table 3. TMS320C25 Instruction Set Summary (continued)
BRANCH/CALL INSTRUCTIONS
INSTRUCTION BIT CODE
NO.
WORDS
MNEMONIC
DESCRIPTION
15 14 13 12 11 10
9
1
1
1
0
0
1
0
0
1
1
1
1
1
0
0
1
1
1
1
8
1
0
1
1
0
0
0
1
0
0
1
1
1
1
0
0
0
0
0
7
1
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
1
0
6
5
4
3
2
1
0
B
Branch unconditionally
2
1
2
2
2
2
2
2
2
2
2
2
2
2
2
2
1
2
1
1
1
1
1
1
0
1
1
1
1
1
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
1
1
1
0
1
1
1
1
1
0
1
1
1
1
0
1
0
1
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
1
0
1
1
1
1
1
1
0
0
1
0
0
1
0
0
0
0
1
1
1
1
1
0
0
0
1
1
0
0
0
0
1
1
1
0
1
1
1
1
D
†
BACC
BANZ
Branch to address specified by accumulator
Branch on auxiliary register not zero
Branch if TC bit ≠ 0
0
1
0
0
1
0
1
D
D
D
D
D
D
D
D
D
D
D
†
BBNZ
†
BBZ
Branch if TC bit = 0
‡
BC
Branch on carry
BGEZ
BGZ
Branch if accumulator ≥ 0
Branch if accumulator > 0
Branch on I/O status = 0
Branch if accumulator ≤ 0
Branch if accumulator < 0
Branch on no carry
BIOZ
BLEZ
BLZ
‡
BNC
†
BNV
BNZ
BV
Branch if no overflow
Branch if accumulator ≠ 0
Branch on overflow
D
D
D
BZ
Branch if accumulator = 0
Call subroutine indirect
Call subroutine
CALA
CALL
RET
0
0
1
1
0
0
0
0
1
1
0
1
0
0
D
Return from subroutine
I/O AND DATA MEMORY OPERATIONS
INSTRUCTION BIT CODE
NO.
WORDS
MNEMONIC
DESCRIPTION
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
†
BLKD
Block move from data memory to data memory
2
2
1
1
1
1
1
1
0
1
1
1
1
1
0
1
I
D
D
D
Block move from program memory to data
memory
†
BLKP
0
0
I
DMOV Data move in data memory
1
1
1
1
1
1
1
1
1
1
1
1
0
1
1
1
1
1
1
1
1
1
0
0
1
1
0
1
1
1
1
1
1
1
1
1
0
0
0
1
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
1
1
0
1
1
1
1
1
0
0
I
0
I
†
FORT
IN
Format serial port registers
Input data from port
0
0
0
1
1
1
FO
PA
D
D
OUT
RFSM
RTXM
Output data to port
I
PA
1
‡
†
Reset serial port frame synchronization mode
Reset serial port transmit mode
Reset external flag
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
I
0
0
0
0
0
0
1
1
0
1
1
0
1
0
0
1
0
0
0
0
1
0
0
1
1
0
1
1
0
1
1
0
0
1
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
†
RXF
‡
†
SFSM
Set serial port frame synchronization mode
Set serial port transmit mode
Set external flag
STXM
†
SXF
TBLR
TBLW
Table read
D
D
Table write
I
†
‡
These instructions are not included in the TMS320C1x instruction set.
These instructions are not included in the TMS32020 instruction set.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
15
TMS320C25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
Table 3. TMS320C25 Instruction Set Summary (concluded)
CONTROL INSTRUCTIONS
INSTRUCTION BIT CODE
NO.
WORDS
MNEMONIC
DESCRIPTION
15 14 13 12 11 10
9
8
7
I
6
5
4
3
D
D
0
2
1
0
†
BIT
Test bit
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
1
1
1
1
1
0
0
0
1
0
0
1
1
1
1
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
1
1
0
0
0
0
0
1
1
1
0
1
1
0
0
0
0
B
†
BITT
Test bit specified by T register
Configure block as data memory
Configure block as program memory
Disable interrupt
0
1
1
1
1
1
0
0
0
1
1
0
1
1
1
1
1
1
1
1
1
1
0
0
1
1
0
1
1
1
1
1
1
1
1
1
1
1
0
0
0
1
1
0
1
1
1
1
1
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
I
†
CNFD
0
0
0
0
0
I
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
0
0
1
0
0
0
0
1
0
1
1
0
1
†
CNFP
DINT
EINT
0
0
Enable interrupt
0
†
IDLE
LST
Idle until interrupt
1
Load status register STO
Load status register ST1
No operation
D
†
LST1
NOP
POP
I
D
0
0
0
I
0
0
0
0
0
1
0
1
0
0
0
1
Pop top of stack to low accumulator
Pop top of stack to data memory
Push data memory value onto stack
Push low accumulator onto stack
Reset carry bit
1
†
POPD
D
†
PSHD
PUSH
I
D
1
0
1
0
0
0
0
0
0
0
1
1
0
1
1
1
0
1
0
0
0
0
0
0
1
0
0
0
0
‡
RC
0
0
0
‡
RHM
ROVM
Reset hold mode
Reset overflow mode
Repeat instruction as specified by data
memory value
†
RPT
1
1
0
1
1
1
0
0
0
0
1
1
0
0
1
1
1
1
I
D
Repeat instruction as specified by immediate
value
†
RPTK
K
†
RSXM
Reset sign-extension mode
Reset test/control flag
Set carry bit
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
1
1
0
0
0
0
0
0
0
0
1
1
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
1
1
1
1
1
1
1
1
0
0
1
1
1
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
I
0
0
0
0
0
0
1
1
1
0
0
1
1
1
0
0
0
0
1
0
1
0
0
0
0
1
1
0
0
1
0
0
1
1
1
‡
RTC
‡
SC
‡
SHM
Set hold mode
SOVM
SST
Set overflow mode
Store status register ST0
Store status register ST1
Set sign-extension mode
Set test/control flag
Software interrupt
D
†
SST1
I
D
0
†
SSXM
0
0
0
0
0
0
0
1
0
0
1
1
1
0
1
1
1
1
1
1
0
‡
STC
0
1
†
TRAP
†
‡
These instructions are not included in the TMS320C1x instruction set.
These instructions are not included in the TMS32020 instruction set.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
16
TMS32020
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
TMS32020 PRODUCT NOTIFICATION
Texas Instruments has identified an unusual set of circumstances that will cause the BIT (Test Bit) instruction
on the TMS32020 to affect the contents of the accumulator; ideally, the BIT instruction should not affect the
accumulator. This set of conditions is:
1. The overflow mode is set (the OVM status register bit is set to one.)
2. And, the two LSBs of the BIT instruction opcode word are zero.
a. When direct memory addressing is used, every fourth data word is affected; all other locations are not
affected.
b. When indirect addressing is used, the two LSBs will be zero if a new ARP is not selected or if a new
ARP is selected and that ARP is 0 or 4.
3. And, adding the contents of the accumulator with the contents of the addressed data memory location,
(bit code)
shifted by 2
, causes an overflow of the accumulator.
If all of these conditions are met, the contents of the accumulator will be replaced by the positive or negative
saturation value, depending on the polarity of the overflow.
Various methods for avoiding this phenomenon are available:
•
•
•
•
•
•
If the TMS32020 is not in the saturation mode when the BIT instruction is executed, the device operates
properly and the accumulator is not affected.
Execute the Reset Overflow Mode (ROVM) instruction immediately prior to the BIT instruction and the Set
Overflow Mode (SOVM) instruction immediately following the BIT instruction.
If direct memory addressing is being used during the BIT instructions, reorganize memory so that the page
relative locations 0, 4, 8, C, 10 . . . are not used.
If indirect addressing is being used during the Bit instruction, select a new ARP which is not AR0 or AR4.
If necessary, follow the instruction with a LARP AR0 or LARP AR4 to restore the code.
UsetheTestBitSpecifiedbyTRegister(BITT)instructioninsteadoftheBITinstruction. TheBITTinstruction
operates correctly and will not affect the accumulator under any circumstances.
Replace TMS32020 with TMS320C25 for ideal pin-to-pIn and object-code compatibility. The BIT instruction
on the TMS320C25 executes properly and will not affect the accumulator under any circumstances.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
17
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
development support
Together, Texas Instruments and its authorized third-party suppliers offer an extensive line of development
support products to assist the user in all aspects of TMS320 second-generation-based design and
development. These products range from development and application software to complete hardware
developmentandevaluationsystems. Table4liststhedevelopmentsupportproductsforthesecond-generation
TMS320 devices.
System development may begin with the use of the simulator, Software Development System (SWDS), or
emulator (XDS) along with an assembler/linker. These tools give the TMS320 user various means of evaluation,
from software simulation of the second-generation TMS320s (simulator) to full-speed in-circuit emulation with
hardware and software breakpoint trace and timing capabilities (XDS).
Software and hardware can be developed simultaneously by using the macro assembler/linker, C compiler, and
simulator for software development, the XDS for hardware development, and the Software Development
System for both software development and limited hardware development.
Many third-party vendors offer additional development support for the second-generation TMS320s, including
assembler/linkers, simulators, high-level languages, applications software, algorithm development tools,
application boards, software development boards, and in-circuit emulators. Refer to the TMS320 Family
Development Support Reference Guide (SPRU011A) for further information about TMS320 development
support products offered by both Texas Instruments and its third-party suppliers.
Additional support for the TMS320 products consists of an extensive library or product and applications
documentation. Three-day DSP design workshops are offered by the TI Regional Technology Centers (RTCs).
These workshops provide insight into the architecture and the instruction set of the second-generation
TMS320s as well as hands-on training with the TMS320 development tools. When technical questions arise
regarding the TMS320 family, contact the Texas Instruments TMS320 Hotline at (713) 274-2320. Or, keep
informedonthelatestTIandthird-partydevelopmentsupporttoolsbyaccessingtheDSPBulletinBoardService
(BBS) at (713) 274-2323. The BBS serves 2400-, 1200- and 300-bps modems. Also, TMS320 application
source code may be downloaded from the BBS.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
18
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
Table 4. TMS320 Second-Generation Software and Hardware Support
SOFTWARE TOOLS
Macro Assembler/Linker
PART NUMBER
IBM MS/PC-DOS
VAX/VMS
TMDS3242850-02
TMDS3242250-08
TMDS3242260-08
TMDS3242550-08
VAX ULTRIX
SUN UNIX
Simulator
IBM MS/PC-DOS
VAX/VMS
TMDS3242851-02
TMDS3242251-08
C Compiler
IBM MS/PC-DOS
VAX/VMS
TMDX3242855-02
TMDX3242255-08
TMDX3242265-08
TMDX3242555-08
VAX ULTRIX
SUN UNIX
Digital Filter Design Package (DFDP)
IBM PC-DOS
DFDP-IBM002
DSP Software Library
IBM MS/PC-DOS
VAX/VMS
TMDC3240812-12
TMDC3204212-18
PART NUMBER
HARDWARE TOOLS
Analog Interface Board 2 (AIB2)
RTC/AIB320A-06
Analog Interface Board Adaptor
RTC/ADP320A-06
EPROM Programmer Adaptor Socket
(68 to 28-pin)
TMDX3270120
Software Development System (SWDS)
XDS/22 Emulator (see Note)
TMDX3268821
TMDS3262221
TMDX3282226
XDS/22 Upgrade (TMS32020 to TMS320C2x)
NOTE: Emulation support for the TMS320C25-50 is available from Macrochip
Research, Inc.; refer to the TMS320 Family Development Support Reference
Guide (SPRU011A) for the mailing address.
IBM is a trademark of International Business Machines Corporation.
PC-DOS is a trademark of International Business Machines Corporation.
VAX and VMS are trademarks of Digital Equipment Corporation.
XDS is a trademark of Texas Instruments Incorporated.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
19
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
documentation support
Extensive documentation supports the second-generation TMS320 devices from product announcement
through applications development. The types of documentation include data sheets with design specifications,
complete user’s guides, and 750 pages of application reports published in the book, Digital Signal Processing
Applications with the TMS320 Family (SPRA012A). An application report, Hardware Interfacing to the
TMS320C25 (SPRA014A), is available for that device.
A series of DSP textbooks is being published by Prentice-Hall and John Wiley & Sons to support digital signal
processing research and education. The TMS320 newsletter, Details on Signal Processing, is published
quarterly and distributed to update TMS320 customers on product information. The TMS320 DSP bulletin board
service provides access to large amounts of information pertaining to the TMS320 family.
Refer to the TMS320 Family Development Support Reference Guide (SPRU011A) for further information about
TMS320 documentation. To receive copies of second-generation TMS320 literature, call the Customer
Response Center at 1-800-232-3200.
specification overview
The electrical specifications for the TMS32020, TMS320C25, TMS320E25, and TMS320C25-50 are given in
the following pages. Note that the electrical specifications for the TMS320E25 are identical to those for the
TMS320C25, with the addition of EPROM-related specifications. A summary of differences between
TMS320C25 and TMS320C25-50 specifications immediately follows the TMS320C25-50 specification.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
20
TMS32020
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
absolute maximum ratings over specified temperature range (unless otherwise noted)†
‡
Supply voltage range, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 7 V
CC
Input voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 7 V
Output voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 7 V
Continuous power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 W
Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 150°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and
functionaloperation of the device at these or any other conditions beyond those indicated in the “Recommended Operating Conditions” section of
this specification is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
†
‡
All voltage values are with respect to V
.
SS
recommended operating conditions
MIN
NOM MAX
UNIT
V
V
V
Supply voltage
Supply voltage
4.75
5
0
5.25
CC
V
SS
All inputs except CLKIN
CLKIN
2
2.4
V
+ 0.3
+ 0.3
0.8
0.8
300
2
V
CC
V
V
High-level input voltage
Low-level input voltage
IH
V
CC
V
All inputs except CLKIN
CLKIN
– 0.3
– 0.3
V
IL
V
I
I
High-level output current
Low-level output current
µA
mA
°C
OH
OL
T
A
Operating free-air temperature (see Notes 1 and 2)
0
70
NOTES: 1. Case temperature (T ) must be maintained below 90°C.
C
2. R
= 36°C/Watt, R = 6°C/Watt.
θJC
θJA
electrical characteristics over specified free-air temperature range (unless otherwise noted)
§
PARAMETER
High-level output voltage
Low-level output voltage
Three-state current
Input current
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
V
V
V
= MIN, I
= MAX
= MAX
2.4
3
OH
CC
OH
= MIN, I
V
0.3
0.6
20
V
OL
CC
OL
= MAX
I
I
V
–20
–10
µA
µA
mA
mA
mA
pF
Z
CC
V = V
to V
CC
10
I
I
SS
= MAX, f = MAX
T
= 0°C, V
CC
360
A
x
I
Supply current
T
A
= 25°C, V
= MAX, f = MAX
250
CC
CC
x
T
C
= 90°C, V
= MAX, f = MAX
285
15
CC
x
C
C
Input capacitance
Output capacitance
I
15
pF
O
§
All typical values for I
CC
are at V
= 5 V, T = 25°C.
CC
A
This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These
circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C,
Method 3015; however, it is advised that precautions should be taken to avoid application of any voltage higher than maximum-rated
voltages to these high-impedance circuits. During storage or handling, the device leads should be shorted together or the device
shouldbe placed in conductive foam. In a circuit, unused inputs should always be connected to an appropriated logic voltagelevel, preferablyeither
or ground. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
V
CC
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
21
TMS32020
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
CLOCK CHARACTERISTICS AND TIMING
The TMS32020 can use either its internal oscillator or an external frequency source for a clock.
internal clock option
The internal oscillator is enabled by connecting a crystal across X1 and X2/CLKIN (see Figure 2). The frequency
of CLKOUT1 is one-fourth the crystal fundamental frequency. The crystal should be fundamental
mode, and parallel resonant, with an effective series resistance of 30 Ω, a power dissipation of 1 mW,
and be specified at a load capacitance of 20 pF.
†
PARAMETER
Input clock frequency
Serial port frequency
TEST CONDITIONS
MIN
TYP
MAX
20.5
2563
UNIT
MHz
MHz
pF
f
f
T
= 0°C to 70°C
= 0°C to 70°C
= 0°C to 70°C
6.7
x
A
†
T
A
50
xs
C1, C2
T
A
10
†
Value derived from characterization data; minimum f at test = 825 kHz.
sx
X1
X2/CLKIN
Crystal
C1
C2
Figure 2. Internal Clock Option
external clock option
An external frequency source can be used by injecting the frequency directly into X2/CLKIN with X1 left
unconnected. The external frequency injected must conform to the specifications listed in the following table.
switching characteristics over recommended operating conditions (see Note 3)
PARAMETER
CLKOUT1/CLKOUT2 cycle time
MIN
195
25
NOM
MAX
597
60
UNIT
ns
t
t
t
t
t
t
c(C)
CLKIN high to CLKOUT1/CLKOUT2/STRB high/low
CLKOUT1/CLKOUT2/STRB fall time
ns
d(CIH-C)
f(C)
10
ns
CLKOUT1/CLKOUT2/STRB rise time
10
ns
r(C)
CLKOUT1/CLKOUT2 low pulse duration
2Q – 15
2Q – 15
Q – 10
2Q 2Q + 15
2Q 2Q + 15
ns
w(CL)
w(CH)
CLKOUT1/CLKOUT2 high pulse duration
ns
td(C1-C2)
CLKOUT1 high to CLKOUT2 low, CLKOUT2 high to CLKOUT1 high, etc.
Q
Q + 10
ns
NOTE 3: Q = 1/4t
.
c(C)
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
22
TMS32020
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
timing requirements over recommended operating conditions (see Note 3)
MIN
NOM
MAX
UNIT
ns
t
t
t
t
t
t
t
CLKIN cycle time
CLKIN fall time
195
597
c(C)
†
10
10
ns
f(CI)
†
CLKIN rise time
ns
r(CI)
CLKIN low pulse duration, t
= 50 ns (see Note 4)
40
40
10
15
ns
w(CIL)
w(CIH)
su(S)
h(S)
c(CI)
CLKIN high pulse duration, t
= 50 ns (see Note 4)
ns
c(CI)
SYNC setup time before CLKIN low
SYNC hold time from CLKIN low
Q – 10
ns
ns
†
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4t
.
c(C)
4. CLKIN duty cycle [t
+ t
/ t
must be within 40-60%.
r(CI) w(CIH)] c(CI)
2.15 V
R
C
= 825 Ω
L
L
From Output
Under Test
Test
Point
= 100 pF
Figure 3. Test Load Circuit
2.0 V
V
(Min)
(Max)
IH
1.88 V
0.92 V
V
IL
0.80 V
0
(a) Input
2.4 V
V
(Min)
(Max)
OH
2.2 V
0.8 V
V
OL
0.6 V
0
(b) Output
Figure 4. Voltage Reference Levels
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
23
TMS32020
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
MEMORY AND PERIPHERAL INTERFACE TIMING
switching characteristics over recommended operating conditions (see Note 3)
PARAMETER
STRB from CLKOUT1 (if STRB is present)
MIN
TYP
Q
MAX
Q + 15
15
UNIT
ns
t
t
t
t
t
t
t
t
t
t
t
Q – 15
– 15
d(C1-S)
d(C2-S)
su(A)
CLKOUT2 to STRB (if STRB is present)
0
ns
Address setup hold time before STRB low (see Note 5)
Address hold time after STRB high (see Note 5)
STRB low pulse duration (no wait states, see Note 6)
STRB high pulse duration (between consecutive cycles, see Note 6)
Data write setup time before STRB high (no wait states)
Data write hold time from STRB high
Q – 30
Q – 15
ns
ns
h(A)
2Q
2Q
ns
w(SL)
w(SH)
su(D)W
h(D)W
en(D)
ns
2Q – 45
Q – 15
ns
Q
ns
†
0
Data bus starts being driven after STRB low (write cycle)
Data bus three-state after STRB high (write cycle)
MSC valid from CLKOUT1
ns
†
Q
0
Q + 30
ns
dis(D)
d(MSC)
–25
25
ns
†
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4t
.
c(C)
5. A15-A0, PS, DS, IS, R/W, and BR timings are all included in timings referenced as “address”.
6. Delays between CLKOUT1/CLKOUT2 edges and STRB edges track each other, resulting in t
no wait states.
and t
being 2Q with
w(SH)
w(SL)
timing requirements over recommended operating conditions (see Note 3)
MIN
NOM
MAX
UNIT
ns
†
t
t
t
t
t
t
t
t
t
Read data access time from address time (read cycle, see Notes 5 and 7)
Data read setup time before STRB high
Data read hold time from STRB high
3Q – 70
a(A)
40
0
ns
su(D)R
h(D)R
ns
READY valid after STRB low (no wait states)
READY valid after CLKOUT2 high
Q – 40
Q – 40
ns
d(SL-R)
d(C2H-R)
h(SL-R)
h(C2H-R)
d(M-R)
h(M-R)
ns
READY hold time after STRB low (no wait states)
READY hold after CLKOUT2 high
Q – 5
Q – 5
ns
ns
READY valid after MSC valid
2Q – 50
ns
READY hold time after MSC valid
0
ns
†
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4t
.
c(C)
5. A15-A0, PS, DS, IS, R/W, and BR timings are all included in timings referenced as “address”.
7. Read data access time is defined as t = t + t – t
.
a(A) su(A) w(SL) su(D)R
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
24
TMS32020
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
RS, INT, BIO, AND XF TIMING
switching characteristics over recommended operating conditions (see Note 3 and 8)
PARAMETER
CLKOUT1 low to reset state entered
MIN
TYP MAX
UNIT
ns
t
t
t
45
d(RS)
CLKOUT1 to IACK valid
– 25
0
25
ns
d(IACK)
d(XF)
XF valid before falling edge of STRB
Q – 30
ns
NOTES: 3. Q = 1/4t
.
c(C)
8. RS, INT, and BIO are asynchronous inputs and can occur at any time during a clock cycle. However, if the specified setup time is met,
the exact sequence shown in the timing diagrams will occur.
timing requirements over recommended operating conditions (see Note 3 and 8)
MIN
50
0
NOM MAX
UNIT
ns
t
t
t
t
t
INT/BIO/RS setup before CLKOUT1 high
INT/BIO/RS hold after CLKOUT1 high
INT/BIO fall time
su(IN)
h(IN)
f(IN)
ns
†
15
ns
INT/BIO low pulse duration
RS low pulse duration
t
ns
w(IN)
w(RS)
c(C)
3t
c(C)
ns
†
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4t
.
c(C)
8. RS, INT, and BIO are asynchronous inputs and can occur at any time during a clock cycle. However, if the specified setup time is met,
the exact sequence shown in the timing diagrams will occur.
HOLD TIMING
switching characteristics over recommended operating conditions (see Note 3)
PARAMETER
HOLDA low after CLKOUT1 low
MIN
TYP MAX
UNIT
ns
†
–25
t
t
t
t
t
25
d(C1L-AL)
dis(AL-A)
dis(C1L-A)
d(HH-AH)
en(A-C1L)
†
15
HOLDA low to address three-state
ns
†
30
Address three-state after CLKOUT1 low (HOLD mode, see Note 9)
HOLD high to HOLDA high
ns
50
ns
†
10
Address driven before CLKOUT1 low (HOLD mode, see Note 9)
ns
†
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4t
.
c(C)
9. A15-A0, PS, DS, IS, STRB, and R/W timings are all included in timings referenced as “address.”
timing requirements over recommended operating conditions (see Note 3)
MIN
NOM
MAX
UNIT
t
HOLD valid after CLKOUT2 high
Q – 45
ns
d(C2H-H)
NOTE 3: Q = 1/4t
.
c(C)
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
25
TMS32020
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
SERIAL PORT TIMING
switching characteristics over recommended operating conditions (see Note 3)
PARAMETER
DX valid after CLKX rising edge (see Note 10)
DX valid after FSX falling edge (TXM = 0, see Note 10)
FSX valid after CLKX rising edge (TXM = 1)
MIN
TYP MAX
UNIT
ns
t
t
t
100
50
d(CH-DX)
d(FL-DX)
d(CH-FS)
ns
60
ns
NOTES: 3. Q = 1/4t
.
c(C)
10. The last occurrence of FSX falling and CLKX rising.
timing requirements over recommended operating conditions (see Note 3)
MIN
NOM
MAX
UNIT
†
t
t
t
t
t
t
t
t
t
Serial port clock (CLKX/CLKR) cycle time
390
20 000
ns
ns
ns
ns
ns
ns
ns
ns
ns
c(SCK)
f(SCK)
r(SCK)
w(SCK)
w(SCK)
su(FS)
h(FS)
‡
Serial port clock (CLKX/CLKR) fall time
50
‡
Serial port clock (CLKX/CLKR) rise time
50
Serial port clock (CLKX/CLKR) low pulse duration (see Note 11)
Serial port clock (CLKX/CLKR) high pulse duration (see Note 11)
FSX/FSR setup time before CLKX/CLKR falling edge (TXM = 0)
FSX/FSR hold time after CLKX/CLKR falling edge (TXM = 0)
DR setup time before CLKR falling edge
150
150
20
12 000
12 000
20
20
su(DR)
h(DR)
DR hold time after CLKR falling edge
20
†
‡
Value derived from characterization data; minimum f at test = 825 kHz.
sx
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4t
.
c(C)
11. The duty cycle of the serial port clock must be within 40-60%.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
26
TMS320C25, TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
†
absolute maximum ratings over specified temperature range (unless otherwise noted)
‡
Supply voltage range, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 7 V
CC
Input voltage range: TMS320E25 pins 24 and 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 15 V
All other inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 7 V
Output voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 7 V
Continuous power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 W
Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 150°C
†
‡
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and
functionaloperation of the device at these or any other conditions beyond those indicated in the “Recommended Operating Conditions” section of
this specification is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to V
.
SS
recommended operating conditions
MIN
NOM
MAX
UNIT
V
V
V
Supply voltage
Supply voltage
4.75
5
0
5.25
CC
V
SS
All inputs except CLKIN/CLKX/CLKR/INT (0-2)
INT (0-2)
2.35
2.5
V
CC
V
CC
V
CC
+ 0.3
+ 0.3
+ 0.3
0.8
V
V
High-level input voltage
V
IH
CLKIN/CLKX/CLKR
All inputs except MP/MC
MP/MC
3.5
V
– 0.3
– 0.3
V
V
IL
Low-level input voltage
0.8
V
I
I
High-level output current
Low-level output current
300
2
µA
mA
°C
°C
OH
OL
TMS320C25, TMS320E25
TMS320C25GBA
0
70
T
Operating free-air temperature
A
– 40
85
electrical characteristics over specified free-air temperature range (unless otherwise noted)
§
3
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
V
V
High-level output voltage
Low-level output voltage
Three-state current
Input current
V
= MIN, I
= MAX
= MAX
2.4
OH
CC
OH
= MIN, I
V
0.3
0.6
20
V
OL
CC
OL
= MAX
I
I
V
–20
–10
µA
µA
Z
CC
V = V
to V
CC
10
I
I
SS
= MAX, f = MAX
Normal
110
50
185
100
mA
Low-level input voltage
T
A
= 0°C, V
CC
I
x
CC
Idle/HOLD
C
C
Input capacitance
Output capacitance
15
pF
pF
I
15
O
§
All typical values are at V
= 5 V, T = 25°.
CC
A
Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic
fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to
MIL-STD-883C, Method 3015; however, it is advised that precautions to be taken to avoid application of any voltage higher than
maximum rated voltages to these high-impedance circuits. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to an appropriate logic voltage level,
preferably either V or ground. Specific guidelines for handling devices of this type are contained in the publication “Guidelines for Handling
CC
Electrostatic-Discharge Sensitive (ESDS) Devices and Assemblies” available from Texas Instruments
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
27
TMS320C25, TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
CLOCK CHARACTERISTICS AND TIMING
The TMS32025 can use either its internal oscillator or an external frequency source for a clock.
internal clock option
The internal oscillator is enabled by connecting a crystal across X1 and X2/CLKIN (see Figure 2). The frequency
ofCLKOUT1 is one-fourth the crystal fundamental frequency. The crystal should be either fundamental
or overtone mode, and parallel resonant, with an effective series resistance of 30 Ω, a power dissipation
of 1 mW, and be specified at a load capacitance of 20 pF. Note that overtone crystals require an additional tuned
LC circuit; see the application report, Hardware Interfacing to the TMS320C25 (SPRA014A).
PARAMETER
Input clock frequency
Serial port frequency
TEST CONDITIONS
MIN
TYP
MAX
40.96
5120
UNIT
MHz
MHz
pF
f
f
T
= 0°C to 70°C
= 0°C to 70°C
= 0°C to 70°C
6.7
x
A
†
0
T
A
xs
C1, C2
T
A
10
†
The serial port was tested at a minimum frequency of 1.25 MHz. However, the serial port was fully static but will properly function down
to f = 0 Hz.
sx
X1
X2/CLKIN
Crystal
C1
C2
Figure 2. Internal Clock Option
external clock option
An external frequency source can be used by injecting the frequency directly into X2/CLKIN with X1 left
unconnected. The external frequency injected must conform to the specifications listed in the following table.
switching characteristics over recommended operating conditions (see Note 3)
PARAMETER
CLKOUT1/CLKOUT2 cycle time
MIN
97.7
5
TYP
MAX
597
30
5
UNIT
ns
t
t
t
t
t
t
t
c(C)
CLKIN high to CLKOUT1/CLKOUT2/STRB high/low
CLKOUT1/CLKOUT2/STRB fall time
ns
d(CIH-C)
f(C)
ns
CLKOUT1/CLKOUT2/STRB rise time
5
ns
r(C)
CLKOUT1/CLKOUT2 low pulse duration
2Q – 8
2Q – 8
Q – 5
2Q 2Q + 8
2Q 2Q + 8
ns
w(CL)
w(CH)
CLKOUT1/CLKOUT2 high pulse duration
ns
)
CLKOUT1 high to CLKOUT2 low, CLKOUT2 high to CLKOUT1 high, etc.
Q
Q + 5
ns
d(C1-C2
NOTE 3: Q = 1/4t
.
c(C)
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
28
TMS320C25, TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
timing requirements over recommended operating conditions (see Note 3)
MIN
NOM MAX
UNIT
ns
t
t
t
t
t
t
t
CLKIN cycle time
CLKIN fall time
24.4
150
c(CI)
†
5
5
ns
f(CI)
†
CLKIN rise time
ns
r(CI)
CLKIN low pulse duration, t
= 50 ns (see Note 4)
20
20
5
ns
w(CIL)
w(CIH)
su(S)
h(S)
c(CI)
CLKIN high pulse duration, t
= 50 ns (see Note 4)
ns
c(CI)
SYNC setup time before CLKIN low
SYNC hold time from CLKIN low
Q – 5
ns
8
ns
†
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4t
.
c(C)
4. CLKIN duty cycle [t
+ t
]/t
must be within 40-60%.
r(CI) w(CIH) c(CI)
+5 V
f
TMS320C25
crystal
10 kΩ
74HC04
4.7 kΩ
F11
CLKIN
C = 20 pF
0.1 µF
47 pF
74AS04
10 kΩ
L
f
(MHz)
L, (µH)
crystal,
TMS320C25
TMS320C25-50
TMS320E25
40.96
51.20
40.96
1.8
1.0
1.8
Figure 3. External Clock Option
Shown above is a crystal oscillator circuit suitable for providing the input clock signal to the TMS320C25,
TMS320E25, and TMS320C25-50. Please refer to Hardware Interfacing to the TMS320C25 (document number
SPRA014A) for details on circuit operation.
2.15 V
R
C
= 825 Ω
L
L
From Output
Under Test
Test
Point
= 100 pF
Figure 4. Test Load Circuit
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
29
TMS320C25, TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
2.0 V
2.4 V
V
(Min)
(Max)
V
(Min)
(Max)
IH
OH
1.88 V
0.92 V
2.2 V
0.8 V
V
IL
V
OL
0.80 V
0
0.6 V
0
(a) Input
(b) Output
Figure 5. Voltage Reference Levels
MEMORY AND PERIPHERAL INTERFACE TIMING
switching characteristics over recommended operating conditions (see Note 3)
PARAMETER
STRB from CLKOUT1 (if STRB is present)
MIN
Q – 6
TYP
Q
MAX
UNIT
ns
t
t
t
t
t
t
t
t
t
t
t
Q + 6
6
d(C1-S)
d(C2-S)
su(A)
CLKOUT2 to STRB (if STRB is present)
– 6
0
ns
Address setup time before STRB low (see Note 5)
Address hold time after STRB high (see Note 5)
STRB low pulse duration (no wait states, see Note 6)
STRB high pulse duration (between consecutive cycles, see Note 6)
Data write setup time before STRB high (no wait states)
Data write hold time from STRB high
Q – 12
Q – 8
ns
ns
h(A)
2Q – 5
2Q – 5
2Q – 20
Q – 10
2Q + 5
2Q + 5
ns
w(SL)
w(SH)
su(D)W
h(D)W
en(D)
ns
ns
Q
ns
†
0
Data bus starts being driven after STRB low (write cycle)
Data bus three-state after STRB high (write cycle)
MSC valid from CLKOUT1
ns
†
Q
0
Q + 15
ns
dis(D)
d(MSC)
– 12
12
ns
†
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4t
.
c(C)
5. A15-A0, PS, DS, IS, R/W, and BR timings are all included in timings referenced as “address”.
6. Delays between CLKOUT1/CLKOUT2 edges and STRB edges track eachother, resulting in t
states.
and t
being 2Q with no wait
w(SH)
w(SL)
timing requirements over recommended operating conditions (see Note 3)
MIN
NOM
MAX
UNIT
ns
t
t
t
t
t
t
t
t
t
Read data access time from address time (read cycle, see Notes 5 and 7)
Data read setup time before STRB high
Data read hold time from STRB high
3Q – 35
a(A)
23
0
ns
su(D)R
h(D)R
ns
READY valid after STRB low (no wait states)
READY valid after CLKOUT2 high
Q – 20
Q – 20
ns
d(SL-R)
d(C2H-R)
h(SL-R)
h(C2H-R)
d(M-R)
h(M-R)
ns
READY hold time after STRB low (no wait states)
READY hold after CLKOUT2 high
Q + 3
Q + 3
ns
ns
READY valid after MSC valid
2Q – 25
ns
READY hold time after MSC valid
0
ns
NOTES: 3. Q = 1/4t
.
c(C)
5. A15-A0, PS, DS, IS, R/W, and BR timings are all included in timings referenced as “address”.
7. Read data access time is defines as t = t + t – t
.
a(A) su(A) w(SL) su(D)R
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
30
TMS320C25, TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
RS, INT, BIO, AND XF TIMING
switching characteristics over recommended operating conditions (see Note 3 and 8)
PARAMETER
CLKOUT1 low to reset state entered
MIN
TYP MAX
UNIT
ns
†
t
t
t
22
12
d(RS)
CLKOUT1 to IACK valid
– 6
0
ns
d(IACK)
d(XF)
XF valid before falling edge of STRB
Q – 15
ns
NOTES: 3. Q = 1/4t
.
c(C)
8. RS, INT, and BIO are asynchronous inputs and can occur at any time during a clock cycle. However, if the specified setup time is
met, the exact sequence shown in the timing diagrams will occur.
timing requirements over recommended operating conditions (see Note 3 and 8)
MIN
32
0
NOM MAX
UNIT
ns
t
t
t
t
t
INT/BIO/RS setup before CLKOUT1 high
INT/BIO/RS hold after CLKOUT1 high
INT/BIO fall time
su(IN)
h(IN)
f(IN)
ns
†
8
ns
INT/BIO low pulse duration
RS low pulse duration
t
ns
w(IN)
w(RS)
c(C)
3
tc(C)
ns
†
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4t
.
c(C)
8. RS, INT, and BIO are asynchronous inputs and can occur at any time during a clock cycle. However, if the specified setup time is
met, the exact sequence shown in the timing diagrams will occur.
HOLD TIMING
switching characteristics over recommended operating conditions (see Note 3)
PARAMETER
HOLDA low after CLKOUT1 low
MIN
TYP
MAX
UNIT
ns
t
t
t
t
t
0
10
d(C1L-AL)
dis(AL-A)
dis(C1L-A)
d(HH-AH)
en(A-C1L)
†
0
HOLDA low to address three-state
ns
†
20
Address three-state after CLKOUT1 low (HOLD mode, see Note 9)
HOLD high to HOLDA high
ns
25
ns
†
8
Address driven before CLKOUT1 low (HOLD mode, see Note 9)
ns
†
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4t
.
c(C)
9. A15-A0, PS, DS, IS, STRB, and R/W timings are all included in timings referenced as “address.”
timing requirements over recommended operating conditions (see Note 3)
MIN
NOM
MAX
UNIT
t
HOLD valid after CLKOUT2 high
Q – 24
ns
d(C2H-H)
NOTE 3: Q = 1/4t
.
c(C)
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
31
TMS320C25, TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
SERIAL PORT TIMING
switching characteristics over recommended operating conditions (see Note 3)
PARAMETER
DX valid after CLKX rising edge (see Note 10)
DX valid after FSX falling edge (TXM = 0, see Note 10)
FSX valid after CLKX rising edge (TXM = 1)
MIN
TYP MAX
UNIT
ns
t
t
t
75
40
40
d(CH-DX)
d(FL-DX)
d(CH-FS)
ns
ns
NOTES: 3. Q = 1/4t
.
c(C)
10. The last occurrence of FSX falling and CLKX rising.
timing requirements over recommended operating conditions (see Note 3)
MIN
NOM MAX
UNIT
ns
†
t
t
t
t
t
t
t
t
t
Serial port clock (CLKX/CLKR) cycle time
Serial port clock (CLKX/CLKR) fall time
Serial port clock (CLKX/CLKR) rise time
200
c(SCK)
f(SCK)
r(SCK)
w(SCK)
w(SCK)
su(FS)
h(FS)
‡
‡
25
ns
25
ns
Serial port clock (CLKX/CLKR) low pulse duration (see Note 11)
Serial port clock (CLKX/CLKR) high pulse duration (see Note 11)
FSX/FSR setup time before CLKX/CLKR falling edge (TXM = 0)
FSX/FSR hold time after CLKX/CLKR falling edge (TXM = 0)
DR setup time before CLKR falling edge
80
80
18
20
10
20
ns
ns
ns
ns
ns
su(DR)
h(DR)
DR hold time after CLKR falling edge
ns
†
‡
The serial port was tested at a minimum frequency of 1.25 MHz. However, the serial port was fully static but will properly function down
to f = 0 Hz.
sx
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4t
.
c(C)
11. The duty cycle of the serial port clock must be within 40-60%.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
32
TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
EPROM PROGRAMMING
†
absolute maximum ratings over specified temperature range (unless otherwise noted)
‡
Supply voltage range, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.6 V to 15 V
Input voltage range on pins 24 and 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 15 V
PP
†
‡
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and
functionaloperation of the device at these or any other conditions beyond those indicated in the “Recommended Operating Conditions” section of
this specification is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to GND.
recommended operating conditions
MIN
NOM MAX
UNIT
V
V
V
V
Programming mode supply voltage (see Note 13)
Read mode supply voltage
6
V
V
V
V
CC
CC
PP
PP
4.75
12
5
5.25
13
Programming mode supply voltage
Read mode supply voltage (see Note 12)
12.5
V
CC
supply current in this case would be I
CC
NOTES: 12. V
can be connected to V
CC
directly (except in the program mode). V
must be maintained at 12.5 V (± 0.25 V).
+ I . During
CC PP
PP
programming, V
13. V
CC
PP
must be applied before or at the same time as V
and removed after or at the same time as V . This device must not be
PP
or V
PP
inserted into or removed from the board when V
PP
is applied.
CC
electrical characteristics over specified temperature range (unless otherwise noted)
§
PARAMETER
supply current
TEST CONDITIONS
V = V = 5.25 V
PP
MIN
TYP
MAX
100
50
UNIT
µA
I
I
V
V
PP1
PP
CC
= 13 V
supply current (during program pulse)
are at V = 5 V, T = 25°C.
V
PP
30
mA
PP2
PP
§
All typical values for I
CC
CC
A
recommended timing requirements for programming, T = 25°C, V
= 6 V, V = 12.5 V
PP
CC
A
(see Notes 14 and 15)
MIN
NOM MAX
UNIT
t
t
t
t
t
t
t
t
t
t
t
t
Initial program pulse duration
Final pulse duration
Address setup time
E setup time
0.95
1
1.05
ms
w(IPGM)
w(FPGM)
su(A)
2.85
78.75
ms
µs
µs
µs
ns
ns
µs
µs
µs
µs
µs
2
2
2
0
su(E)
G setup time
su(G)
Output disable time from G
Output enable time from G
Data setup time
130¶
150¶
dis(G)
en(G)
2
2
2
0
2
su(D)
V
V
setup time
setup time
su(VPP)
su(VCC)
h(A)
PP
CC
Address hold time
Data hold time
h(D)
¶
Value derived from characterization data and not tested.
NOTES: 14. For all switching characteristics and timing measurements, input pulse levels are 0.4 V to 2.4 V and V
programming.
= 12.5 V ± 0.5 V during
PP
15. Common test conditions apply for t
except during programming.
dis(G)
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
33
TMS320C25-50
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
†
absolute maximum ratings over specified temperature range (unless otherwise noted)
‡
Supply voltage range, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 7 V
CC
Input voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 7 V
Output voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 7 V
Continuous power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 W
Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 150°C
†
‡
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and
functionaloperation of the device at these or any other conditions beyond those indicated in the “Recommended Operating Conditions” section of
this specification is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to V
.
SS
recommended operating conditions
MIN
NOM MAX
UNIT
V
V
V
Supply voltage
Supply voltage
4.75
5
0
5.25
CC
V
SS
INT0-INT2
2.5
3.5
V
V
High-level input voltage
Low-level input voltage
CLKIN, CLKX, CLKR
Other inputs
MP/MC
V
IH
IL
2.35
V
0.8
0.8
0.8
300
2
V
V
CLKIN
V
Other inputs
V
I
I
High-level output current
Low-level output current
Operating free-air temperature
µA
mA
°C
OH
OL
T
0
70
A
electrical characteristics over specified free-air temperature range (unless otherwise noted)
§
TYP
PARAMETER
High-level output voltage
Low-level output voltage
High-impedance current
Input current
TEST CONDITIONS
MIN
MAX
UNIT
V
V
V
V
= MIN, I
= MAX
= MAX
2.4
OH
CC
OH
= MIN, I
V
0.6
20
V
OL
CC
OL
= MAX
I
I
V
– 20
– 10
µA
µA
Z
CC
V = V
to V
CC
10
I
I
SS
Normal
Idle, HOLD
110
50
185
100
T
A
= 0°C, V = MAX, f = MAX
CC
x
I
Supply current
mA
CC
C
C
Input capacitance
Output capacitance
15
pF
pF
I
15
O
§
All typical values are at V
= 5 V, T = 25°C.
CC
A
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
34
TMS320C25-50
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
CLOCK CHARACTERISTICS AND TIMING
The TMS320C25-50 can use either its internal oscillator or an external frequency source for a clock.
internal clock option
TheinternaloscillatorisenabledbyconnectingacrystalacrossX1 andX2, CLKIN. ThefrequencyofCLKOUT1
is one-fourth the crystal fundamental frequency. The crystal should be in either fundamental or overtone mode,
and parallel resonant, with an effective series resistance of 30 Ω, a power dissipation of 1 mW, and be specified
at a load capacitance of 20 pF. Note that overtone crystals require an additional tuned LC circuit.
†
PARAMETER
Input clock frequency
Serial port frequency
TEST CONDITIONS
MIN
6.7
0
TYP
MAX
51.2
6.4
UNIT
MHz
MHz
pF
f
f
T
= 0°C to 70°C
= 0°C to 70°C
= 0°C to 70°C
x
A
T
A
sx
C1, C2
T
A
10
†
The serial port was tested at a minimum frequency of 1.25 MHz. However, the serial port was fully static but will properly function down to
= 0 Hz.
f
sx
X1
X2/CLKIN
Crystal
C1
C2
Figure 6. Internal Clock Option
external clock option
An external frequency source can be used by injecting the frequency directly into X2/CLK, with X1 left
unconnected. The external frequency injected must conform to specifications listed in the following table.
switching characteristics over recommended operating conditions (see Note 3)
MIN
78.13
12
NOM
MAX
597
UNIT
ns
t
t
t
t
t
t
CLKOUT1, CLKOUT2 cycle time
c(C)
CLKIN high to CLKOUT1, CLKOUT2, STRB high, low
CLKOUT1, CLKOUT2, STRB fall time
27
ns
d(CIH-C)
f(C)
4
ns
CLKOUT1, CLKOUT2, STRB rise time
4
ns
r(C)
CLKOUT1, CLKOUT2, STRB low pulse duration
CLKOUT1, CLKOUT2, STRB high pulse duration
2Q – 7
2Q – 3
2Q + 3
2Q + 7
ns
w(CL)
w(CH)
ns
CLKOUT1 high to CLKOUT2 low,
CLKOUT2 high to CLKOUT1 high, etc.
t
Q – 6
Q + 2
ns
d(C1-C2)
NOTE 3: Q = 1/4 t
c(C)
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
35
TMS320C25-50
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
+5 V
f
TMS320C25
crystal
10 kΩ
74HC04
4.7 kΩ
F11
CLKIN
C = 20 pF
0.1 µF
47 pF
74AS04
10 kΩ
L
f
(MHz)
L, (µH)
crystal,
TMS320C25
TMS320C25-50
TMS320E25
40.96
51.20
40.96
1.8
1.0
1.8
Figure 7. External Clock Option
timing requirements over recommended operating conditions (see Note 3)
MIN
NOM
MAX
UNIT
19.5
t
CLKIN cycle time
150
ns
c(CI)
3
†
†
t
t
t
t
t
t
CLKIN fall time
5
ns
ns
ns
ns
ns
ns
f(CI)
CLKIN rise time
5
r(CI)
CLKIN low pulse duration, t
= 50 ns (see Note 4)
20
20
4
w(CIL)
w(CIH)
su(S)
h(S)
c(CI)
CLKIN high pulse duration, t
= 50 ns (see Note 4)
c(CI)
SYNC setup time before CLKIN low
SYNC hold time from CLKIN low
Q – 4
4
†
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4 t
c(C)
4. CLKIN duty cycle [t
+ t must be within 40-60%.
]/t
r(CI) w(CIH) c(CI)
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
36
TMS320C25-50
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
MEMORY AND PERIPHERAL INTERFACE TIMING
switching characteristics over recommended operating conditions (see Note 3)
PARAMETER
MIN
Q – 5
TYP
MAX
Q + 3
5
UNIT
ns
t
t
t
t
t
t
t
t
t
t
t
STRB from CLKOUT (if STRB is present)
d(C1-S)
d(C2-S)
su(A)
CLKOUT2 to STRB (if STRB is present)
– 2
ns
Address setup time before STRB low (see Note 5)
Address hold time after STRB high (see Note 5)
STRB low pulse duration (no wait states, see Note 6)
STRB high pulse duration (between consecutive cycles, see Note 6)
Data write setup time before STRB high (no wait)
Data write hold time from STRB high
Q – 11
Q – 4
ns
ns
n(A)
2Q – 5
2Q – 2
2Q – 17
Q – 5
2Q + 2
ns
w(SL)
w(SH)
su(D)W
h(D)W
en(D)
†
2Q + 5
ns
ns
ns
†
Data bus starts being driven after STRB low (write)
Data bus high-impedance state after STRB high, (write)
MSC valid from CLKOUT1
0
ns
†
Q
Q + 15
ns
dis(D)
d(MSC)
–1
9
ns
†
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4 t
c(C)
5. A15-A0, PS, DS, IS, R/W, and BR timings are all included in timings referenced as “address”.
6. Delay between CLKOUT1, CLKOUT2, and STRB edges track each other, resulting in t and t
being 2Q with no wait states.
w(SH)
w(SL)
timing requirements over recommended operating conditions (see Note 3)
MIN
NOM
MAX
UNIT
ns
t
t
t
t
t
t
t
t
t
Read data access time from address time (see Notes 5 and 7)
Data read setup time before STRB high
Data read hold time from STRB high
3Q – 30
a(A)
19
0
ns
su(D)R
h(D)R
ns
READY valid after STRB low (no wait states)
READY valid after CLKOUT2 high
Q – 21
Q – 21
ns
d(SL-R)
d(C2H-R)
h(SL-R)
h(C2H-R)
d(M-R)
h(M-R)
ns
READY hold time after STRB low (no wait states)
READY valid after CLKOUT2 high
Q – 1
Q – 1
ns
ns
READY valid after MSC valid
2Q – 24
ns
READY hold time after MSC valid
0
ns
NOTES: 3. Q = 1/4 t
c(C)
5. A15-A0, PS, DS, IS, R/W, and BR timings are all included in timings referenced as “address”.
7. Read data access time is defined as t = t + t – t
.
a(A) su(A) w(SL) su(D)R
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
37
TMS320C25-50
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
RS, INT, BIO, AND XF TIMING
switching characteristics over recommended operating conditions (see Notes 3 and 16)
PARAMETER
CLKOUT1 low to reset state entered
MIN
TYP
MAX
UNIT
ns
†
22
t
t
t
d(RS)
CLKOUT1 to IACK valid
– 5
7
ns
d(IACK)
d(XF)
XF valid before falling edge of STRB
Q – 8
ns
†
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4 t
c(C)
16. RS, INT, BIO are asynchronous inputs and can occur at any time during a clock cycle.
timing requirements over recommended operating conditions (see Notes 3 and 16)
MIN
NOM
MAX
UNIT
t
t
t
t
t
INT, BIO, RS setup before CLKOUT1 high
INT, BIO, RS hold after CLKOUT1 high
INT, BIO fall time
25
ns
su(IN)
h(IN)
f(IN)
0
ns
ns
ns
ns
†
8
INT, BIO low pulse duration
RS low pulse duration
t
w(IN)
w(RS)
c(C)
3t
c(C)
†
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4 t
c(C)
16. RS, INT, BIO are asynchronous inputs and can occur at any time during a clock cycle.
HOLD TIMING
switching characteristics over recommended operating conditions (see Note 3)
PARAMETER
HOLDA low after CLKOUT1 low
MIN
TYP
MAX
UNIT
ns
†
t
t
t
t
t
1
11
d(CIL-AL)
dis(AL-A)
dis(CIL-A)
d(HH-AH)
en(A-CIL)
†
HOLDA low to address high-impedance
0
ns
†
Address high-impedance after CLKOUT1 low (HOLD mode, see Note 17)
HOLD high to HOLDA high
20
ns
19
ns
†
Address driven before CLKOUT1 low (HOLD mode, see Note 17)
8
ns
†
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4 t
c(C)
17. A15-A0, PS, DS, STRB, and R/W timings are all included in timings referenced as “address”.
timing requirements over recommended operating conditions (see Note 3)
MIN
NOM
MAX
UNIT
t
HOLD valid after CLKOUT2 high
Q – 19
ns
d(C2H-H)
NOTE 3: Q = 1/4 t
c(C)
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
38
TMS320C25-50
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
SERIAL PORT TIMING
switching characteristics over recommended operating conditions (see Note 3)
PARAMETER
DX valid after CLKX rising edge (see Note 18)
DX valid after falling edge (TXM = 0, see Note 18)
FSX valid after CLKX raising edge (TXM = 1)
MIN
TYP
MAX
75
UNIT
ns
t
t
t
d(CH-DX)
d(FL-DX)
d(CH-FS)
40
ns
40
ns
NOTES: 3. Q = 1/4 t
c(C)
18. The last occurrence of FSX falling and CLKX rising.
timing requirements over recommended operating conditions (see Note 3)
MIN
NOM
MAX
UNIT
†
t
t
t
t
t
t
t
t
Serial port clock (CLKX/CLKR) cycle time
Serial port clock (CLKX/CLKR) fall time
Serial port clock (CLKX/CLKR) rise time
160
ns
c(SCK)
f(SCK)
r(SCK)
w(SCK)
su(FS)
h(FS)
‡
‡
25
25
ns
ns
ns
ns
ns
ns
ns
Serial port clock (CLKX/CLKR) low or high pulse duration (see Note 19)
FSX or FSR setup time before CLKX, CLKR falling edge (TXM = 0)
FSX or FSR hold time before CLKX, CLKR falling edge (TXM = 0)
DR setup time before CLKR falling edge
64
5
10
5
su(DR)
h(DR)
DR hold time after CLKR falling edge
10
†
‡
The serial port was tested at a minimum frequency of 1.25 MHz. However, the serial port was fully static but will properly function down to
= 0 Hz.
f
sx
Value derived from characterization data and not tested.
NOTES: 3. Q = 1/4 t
c(C)
19. The cycle of the serial port must be within 40%-60%.
CONTRAST SUMMARY OF ELECTRICAL SPECIFICATIONS
The following table presents electrical parameters which differ between TMS320C25 (40 MHz, 100 ns) and
TMS320C25-50 (50 MHz, 80 ns).
clock characteristics and timing
TMS320C25
TYP
TMS320C25-50
MIN TYP
PARAMETER
UNIT
MIN
MAX
MAX
t
t
t
t
t
t
t
t
t
97.7
597
78.13
12
597
ns
ns
ns
ns
ns
ns
ns
ns
ns
c(SCK)
d(CIH-C)
f(C)
5
30
5
27
4
5
4
r(C)
2Q – 8
2Q – 8
Q – 5
5
2Q
2Q
Q
2Q + 8 2Q – 7
2Q + 8 2Q – 3
2Q + 3
2Q + 7
Q + 2
Q – 4
w(CL)
w(CH)
d(C1-C2)
su(S)
Q + 5
Q – 5
Q – 6
4
4
8
h(S)
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
39
TMS320C25-50
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
memory and peripheral interface timing
TMS320C25
TMS320C25-50
MIN TYP
UNIT
PARAMETER
MIN
Q – 6
– 6
TYP
Q
MAX
Q+6
6
MAX
Q + 3
5
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Q – 5
– 2
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
d(C1-S)
d(C2-S)
su(A)
0
Q – 12
Q – 8
Q – 11
Q – 4
2Q – 5
2Q – 2
2Q – 17
Q – 5
–1
h(A)
2Q
2Q
2Q + 2
2Q + 5
w(SL)
w(SH)
2Q – 20
Q – 10
– 12
su(D)W
h(D)W
d(MSC)
a(A)
Q
0
12
9
3Q – 35
3Q – 30
23
0
19
0
su(D)R
h(D)R
Q – 20
Q – 20
Q – 21
Q – 21
d(SL-R)
d(C2H-R)
h(SL-R)
h(C2H-R)
d(M-R)
h(M-R)
Q + 3
Q + 3
Q – 1
Q – 1
2Q – 25
2Q – 24
0
0
RS, INT, BIO, and XF timing
TMS320C25
TMS320C25-50
UNIT
PARAMETER
MIN
TYP
MAX MIN TYP MAX
t
t
t
t
– 6
0
12
– 5
Q – 8
25
7
ns
ns
ns
ns
d(IACK)
Q – 15
d(XF)
32
0
su(IN)
h(IN)
0
HOLD timing
TMS320C25
TYP
TMS320C25-50
UNIT
PARAMETER
MIN
MAX
10
MIN
TYP
MAX
11
t
t
t
0
1
ns
ns
ns
d(C1L-AL)
d(HH-AH)
d(C2H-H)
25
19
Q – 24
Q – 19
serial port timing
TMS320C25
TYP MAX
TMS320C25-50
UNIT
PARAMETER
MIN
MIN
TYP MAX
t
t
t
t
t
t
t
75
40
40
70
40
40
ns
ns
ns
ns
ns
ns
ns
d(CH-DX)
d(FL-DX)
d(CH-FS)
su(FS)
18
20
10
20
5
10
5
h(FS)
su(DR)
h(DR)
10
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
40
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
TIMING DIAGRAMS
This section contains all the timing diagrams for the TMS320 second-generation devices. Refer to the top corner
of page for the specific device.
Timing measurements are referenced to and from a low voltage of 0.8 voltage and a high voltage of 2 volts,
unless otherwise noted.
clock timing
t
c(CI)
t
f(CI)
t
r(CI)
X/2CLKIN
SYNC
t
w(CIH)
t
h(S)
su(S)
t
w(CIL)
t
t
su(S)
t
c(C)
t
w(CL)
d(CIH-C)
t
d(CIH-C)
t
CLKOUT1
STRB
t
w(CH)
t
t
f(C)
r(C)
t
d(CIH-C)
t
d(CIH-C)
t
c(C)
t
w(CL)
CLKOUT2
t
t
t
t
r(C)
d(C1-C2)
d(C1-C2)
f(C)
t
t
w(CH)
d(C1-C2)
t
d(C1-C2)
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
41
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
memory read timing
t
d(C1-S)
CLKOUT1
CLKOUT2
STRB
t
d(C1-S)
t
t
d(C2-S)
d(C2-S)
t
w(SH)
t
t
h(A)
su(A)
t
w(SL)
Valid
A15-A0,
BR, PS, DS
or IS
t
a(A)
R/W
READY
D15-D0
t
d(SL-R)
t
su(D)R
t
t
h(D)R
h(SL-R)
Data In
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
42
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
memory write timing
CLKOUT1
CLKOUT2
STRB
t
h(A)
t
su(A)
A15-A0,
BR, PS, DS
or IS
Valid
R/W
READY
D15-D0
t
su(D)W
t
h(D)W
Data Out
t
t
en(D)
dis(D)
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
43
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
one wait-state memory access timing
CLKOUT1
CLKOUT2
STRB
t
h(C2H-R)
A15-A0, BR,
PS, DS, R/W or
IS
Valid
t
h(C2H-R)
t
d(C2H-R)
t
d(C2H-R)
READY
t
t
d(M-R)
h(M-R)
t
t
h(M-R)
d(M-R)
D15-D0
(For Read
Operation)
Data In
D15-D0
(For Write
Operation)
Data Out
t
d(MSC)
t
d(MSC)
MSC
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
44
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
reset timing
CLKOUT1
t
su(IN)
t
d(RS)
t
su(IN)
t
h(IN)
RS
A15-A0
D15-D0
PS
t
w(RS)
Valid
Fetch
Location 0
Valid
Begin
Program
Execution
STRB
Control
†
Signals
IACK
Serial Port
‡
Control
†
‡
Control signals are DS, IS, R/W, and XF.
Serial port controls are DX and FSX.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
45
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
interrupt timing (TMS32020)
CLKOUT1
STRB
t
t
su(IN)
h(IN)
t
w(IN)
INT2-INT0
A15-A0
IACK
t
t
d(IACK)
f(IN)
FETCH N
FETCH N + 1
FETCH I
FETCH I + 1
t
d(IACK)
interrupt timing (TMS320C25)
CLKOUT1
t
su(IN)
STRB
t
h(IN)
t
w(IN)
INT2-INT0
A15-A0
IACK
t
f(IN)
t
d(IACK)
FETCH N
FETCH N + 1
FETCH N + 2
N + 3
FETCH I
t
d(IACK)
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
46
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
serial port receive timing
t
c(SCK)
t
r(SCK)
t
w(SCK)
CLKR
t
h(DR)
t
f(SCK)
t
h(FS)
t
w(SCK)
FSR
t
su(FS)
t
su(DR)
DR
serial port transmit timing
t
c(SCK)
t
t
r(SCK)
w(SCK)
CLKX
t
d(CH-DX)
t
f(SCK)
t
w(SCK)
t
h(FS)
FSX
(Input,
TXM = 0)
t
t
d(CH-DX)
su(FS)
t
d(FL-DX)
DX
N = 1
N = 8,16
t
d(CH-FS)
t
d(CH-FS)
FSX
(Output,
TXM = 1)
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
47
TMS32020
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
BIO timing
CLKOUT1
STRB
FETCH Branch Address
PC = N + 1
FETCH Next Instruction
FETCH
A15-A0
BIOZ
PC = N
PC = N + 2
PC = N + 3
or Branch Address
t
su(IN)
t
h(IN)
BIO
Valid
external flag timing
CLKOUT1
STRB
t
d(XF)
FETCH
SXF/RXF
A15-A0
XF
Valid
Valid
Valid
PC = N – 1
PC = N
PC = N + 1
PC = N + 2
Valid
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
48
TMS320C25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
BIO timing
CLKOUT1
STRB
FETCH Branch Address
PC = N + 1
FETCH Next Instruction
FETCH
BIOZ
A15-A0
PC = N
PC = N + 2
or Branch Address
t
su(IN)
t
h(IN)
BIO
Valid
external flag timing
CLKOUT1
STRB
t
d(XF)
FETCH
SXF/RXF
A15-A0
XF
Valid
Valid
Valid
PC = N
PC = N + 1
PC = N + 2
PC = N + 3
Valid
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
49
TMS32020
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
HOLD timing (part A)
CLKOUT1
CLKOUT2
STRB
†
t
d(C2H-H)
HOLD
A15-A0
N
N + 1
Valid
N + 2
PS, DS,
or IS
Valid
R/W
D15-D0
HOLDA
t
dis(C1L-A)
In
In
t
t
dis(AL-A)
d(C1L-AL)
N
N + 1
N
N/A
Dummy
N/A
FETCH
N – 1
Dead
EXECUTE
†
HOLD is an asynchronous input and can occur at any time during a clock cycle. If the specified timing is met, the exact sequence shown will occur;
otherwise, a delay of one CLKOUT2 cycle will occur.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
50
TMS32020
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
HOLD timing (part B)
CLKOUT1
CLKOUT2
STRB
t
en(A-C1L)
†
t
d(C2H-H)
HOLD
A15-A0
Valid
Valid
PS, DS,
or IS
R/W
D15-D0
HOLDA
In
In
t
d(HH-AH)
N + 2
N + 3
N/A
N /A
N + 2
N + 1
N + 3
N + 2
FETCH
Dead
Dead
EXECUTE
†
HOLD is an asynchronous input and can occur at any time during a clock cycle. If the specified timing is met, the exact sequence shown will occur;
otherwise, a delay of one CLKOUT2 cycle will occur.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
51
TMS320C25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
HOLD timing (part A)
CLKOUT1
CLKOUT2
STRB
†
t
d(C2H-H)
HOLD
A15-A0
N
N + 1
Valid
N + 2
PS, DS,
or IS
Valid
R/W
D15-D0
HOLDA
t
dis(C1L-A)
In
In
t
t
dis(AL-A)
d(C1L-AL)
N
N + 1
–
–
–
FETCH
N – 2
N – 1
N
EXECUTE
†
HOLD is an asynchronous input and can occur at any time during a clock cycle. If the specified timing is met, the exact sequence shown will occur;
otherwise, a delay of one CLKOUT2 cycle will occur.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
52
TMS320C25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
HOLD timing (part B)
CLKOUT1
CLKOUT2
STRB
t
en(A-C1L)
†
t
d(C2H-H)
HOLD
PS, DS,
or IS
Valid
R/W
D15-D0
HOLDA
A15-A0
In
t
d(HH-AH)
N + 2
N + 2
–
–
–
–
–
–
N + 2
N + 1
FETCH
EXECUTE
†
HOLD is an asynchronous input and can occur at any time during a clock cycle. If the specified timing is met, the exact sequence shown will occur;
otherwise, a delay of one CLKOUT2 cycle will occur.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
53
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
TYPICAL SUPPLY CURRENT CHARACTERISTICS FOR TMS320C25
I
vs f
and V
I
vs f and V
(CLKIN) CC
CC
(CLKIN)
CC
CC
Powerdown Mode
Normal Operating Mode
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
V
V
V
V
V
= 5.50 V
= 5.25 V
= 5.00 V
= 4.75 V
= 4.50 V
CC
CC
CC
CC
CC
T
= 25°C
A
V
V
V
V
V
= 5.50 V
= 5.25 V
= 5.00 V
= 4.75 V
= 4.50 V
CC
CC
CC
CC
CC
80
70
60
50
40
30
20
10
4
8
12 16 20 24 28 32 36 40 44 48 52
, MHz
4
8
12 16 20 24 28 32 36 40 44 48 52
, MHz
f
f
(CLKIN)
(CLKIN)
TMS320C25FNL (PLCC) reflow soldering precautions
Recent tests have identified an industry-wide problem experienced by surface mounted devices exposed to
reflow soldering temperatures. This problem involves a package cracking phenomenon sometimes
experienced by large (e.g., 68-lead) plastic leaded chip carrier (PLCC) packages during surface mount
manufacturing. This phenomenon occur if the TMS320C25FNL is exposed to uncontrolled levels of humidity
prior to reflow solder. This moisture can flash to steam during solder reflow, causing sufficient stress to crack
the package and compromise device integrity. If the TMS320C25FNL is being socketed, no special handling
precautions are required. In addition, once the device is soldered into the board, nospecialhandlingprecautions
are required.
In order to minimize moisture absorption, TI ships the TMS320C25FNL in “dry pack” shipping bags with a RH
indicator card and moisture-absorbing desiccant. These moisture-barrier shipping bags will adequately block
moisture transmission to allow shelf storage for 12 months from date of seal when stored at less than 60%
relative humidity (RH) and less than 30°C. Devices may be stored outside the sealed bags indefinitely if stored
at less than 25% RH and 30°C.
Once the bag seal is broken, the devices should be stored at less than 60% RH and 30°C as well as reflow
soldered within two days of removal. In the event that either of the above conditions is not met, TI recommends
these devices be baked in a clean oven at 125°C and 10% maximum RH for 24 hours. This restores the devices
to their “dry packed” moisture level.
NOTE
Shipping tubes will not withstand the 125°C baking process. Devices should be transferred to a metal tray or tube be-
fore baking. Standard ESD precautions should be followed.
In addition, TI recommends that the reflow process not exceed two solder cycles and the temperature not
exceed 220°C.
If you have any additional questions or concerns, please contact your local TI representative.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
54
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
MECHANICAL DATA
68-pin GB grid array ceramic package (TMS32020, TMS320C25)
28,448 (1.120)
27,432 (1.080)
Thermal Resistance Characteristics
17,02 (0.670)
Nom
PARAMETER
MAX UNIT
Junction-to-free-air
thermal resistance
R
R
36
6
°C/W
θJA
28,448 (1.120)
27,432 (1.080)
Junction-to-case
thermal resistance
°C/W
θJC
17,02
(0.670)
Nom
4,953 (0.195)
2,032 (0.080)
1,397 (0.055)
Max
1,575 (0.062)
3,302 (0.130)
2,794 (0.110)
Dia
1,473 (0.058)
0,508 (0.020)
0,406 (0.016)
2,54
(0.100)
T.P.
2,54
(0.100)
T.P.
L
K
J
H
G
F
E
D
C
B
A
1,524 (0.060)
Nom
4 Places
1
2
3
4
5
6
7
8
9
10 11
1,27
(0.050)
Nom
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
55
TMS320C25
TMS320C25-50
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
68-lead plastic leaded chip carrier package (TMS320C25 and TMS320C25-50)
Seating
Plane
1,27 (0.050) T.P.
(see Note B)
0,25 (0.010) R Max
3 Places
24,33 (0.956)
24,13 (0.950)
(see Note A)
23,62 (0.930)
23,11 (0.910)
(At Seating Plane)
25,27 (0.995)
25,02 (0.985)
0,94 (0.037)
R
0,69 (0.027)
1,22 (0.048)
1,07 (0.042)
× 45°
1,35 (0.053)
× 45°
1,19 (0.047)
24,33 (0.956)
24,13 (0.950)
(see Note A)
2,79 (0.110)
2,41 (0.095)
25,27 (0.995)
25,02 (0.985)
4,50 (0.177)
4,24 (0.167)
0,81 (0.032)
1,52 (0.060)
Min
Thermal Resistance Characteristics
0,66 (0.026)
PARAMETER
MAX UNIT
Junction-to-free-air
thermal resistance
0,64 (0.025)
Min
R
R
46
11
°C/W
θJA
Junction-to-case
thermal resistance
°C/W
θJC
0,51 (0.020)
0,36 (0.014)
Lead Detail
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
NOTES: A. Centerline of center pin, each side, is within 0,10 (0.004) of package centerline as determined by this dimension.
B. Location of each pin is within 0,127 (0.005) of true position with respect to center pin on each side.
WARNING
When reflow soldering is required, refer to page 54 for special handling instructions.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
56
TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
MECHANICAL DATA
68-lead FZ CER-QUAD, ceramic leaded chip carrier package (TMS320E25 only)
This hermetically-sealed chip carrier package consists of a ceramic base, ceramic cap, and a 68-lead frame.
Hermetic sealing is accomplished with glass. The FZ package is intended for both socket- or surface- mounting.
Having a Sn/Pb ratio of 60/40, the tin/lead-coated leads do not require special cleaning or processing
when being surface-mounted.
A
4,57 (0.180)
3,94 (0.155)
(see Note 2)
3,55 (0.140)
3,05 (0.120)
B
1,02 (0.040) × 45°
1,27 (0.050) Typ
(see Note 3)
C
A
B
(At Seating
Plane)
(see Note 2)
0,81 (0.032)
0,66 (0.026)
0,51 (0.020)
0,36 (0.014)
0,64 (0.025)
R
Max
3 Places
(see Note 1)
1,016 (0.040) Min
Ref
Thermal Resistance Characteristics
3,05 (0.120)
2,29 (0.090)
MAX UNIT
PARAMETER
Junction-to-free-air
thermal resistance
R
R
49
8
°C/W
θJA
Seating Plane
(see Note 4)
Junction-to-case
thermal resistance
°C/W
θJC
A
B
C
JEDEC
NO. OF
OUTLINE
TERMINALS
MIN
MAX
MIN
MAX
MIN
MAX
12,32
(0.485)
12,57
(0.465)
10,92
(0.430)
11,56
(0.455)
10,41
(0.410)
10,92
(0.430)
MO-087AA
MO-087AB
–––
28
44
68
17,40
(0.685)
17,65
(0.695)
16,00
(0.630)
16,64
(0.655)
15,49
(0.610)
16,00
(0.630)
25,02
(0.985)
25,27
(0.995)
23,62
(0.930)
24,26
(0.955)
23,11
(0.910)
23,62
(0.930)
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
NOTES: 1. Glass is optional, and the diameter is dependent on device application.
2. Centerline of center pin, each side, is within 0,10 (0.004) of package centerline as determined by dimension B.
3. Location of each pin is within 0,127 (0.005) of true position with respect to center pin on each side.
4. The lead contact points are within 0,15 (0.006) of being planar.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
57
TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
programming the TMS320E25 EPROM cell
The TMS320E25 includes a 4K × 16-bit EPROM, implemented from an industry-standard EPROM cell, to
perform prototyping and early field testing and to achieve low-volume production. When used with a 4K-word
masked-ROM TMS320C25, the TMS320E25 yields a high-volume, low-cost production as a result of more
migration paths for data. An EPROM adapter socket (part # TMDX3270120), shown in Figure 8, is available to
provide 68-pin to 28-pin conversion for programming the TMS320E25.
Figure 8. EPROM Adapter Socket
Key features of the EPROM cell include standard programming and verification. For security against copyright
violations, the EPROM cell features an internal protection mechanism to prevent proprietary code from being
read. The protection feature can be used to protect reading the EPROM contents. This section describes
erasure, fast programming and verification, and EPROM protection and verification.
fast programming and verification
The TMS320E25 EPROM cell is programmed using the same family and device codes as the TMS27C64
8K × 8-bit EPROM. The TMS27C64 EPROM series are ultraviolet-light erasable, electrically programmable
read-only memories, fabricated using HVCMOS technology. The TMS27C64 is pin-compatible with existing
28-pin ROMs and EPROMs. The TMS320E25, like the TMS27C64, operates from a single 5-V supply in the
read mode; however, a 12.5-V supply is needed for programming. All programming signals are TTL level. For
programming outside the system, existing EPROM programmers can be used. Locations may be programmed
singly, in blocks, or at random. When programmed in blocks, the data is loaded into the EPROM cell one byte
at a time, the high byte first and the low byte second.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
58
TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
Figure 9 shows the wiring conversion to program the TMS320E25 using the 28-pin pinout of the TMS27C64.
The pin nomenclature table provides a description of the TMS27C64 pins. The code to be programmed into the
device should be serial mode. The TMS320E25 uses 13 address lines to address the 4K-word memory in byte
format.
9
8
7
6
5
4
3
2
1 68 67 66 65 64 63 62 61
60
10
TMS27C64
D7
D6
D5
D4
D3
D2
D1
D0
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
V
CC
28
27
26
25
24
23
22
21
20
19
18
17
16
15
PGM
EPT
A8
A9
A11
G
TMS320E25
68-Pin (FZ)
CLKIN
A10
E
Q8
Q7
Q6
Q5
Q4
E
EPT
V
PP
A0
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
8
Pin Nomenclature (TMS320E25)
SIGNALS
I/O
DEFINITION
A12 (MSB)-A0 (LSB)
CLIN
I
I
On-chip EPROM programming address lines
Clock oscillator input
E
EPT
I
I
EPROM chip select
EPROM test mode select
G
GND
I
I
EPROM read/verify select
Ground
PGM
I
EPROM write/program select
Data lines for byte-wide programming of on-chip 8K bytes of EPROM
Reset for initializing the device
5-V power supply
Q8 (MSB)-Q1 (LSB)
RS
I/O
I
I
I
V
V
CC
PP
12.5-V power supply
Figure 9. TMS320E25 EPROM Conversion to TMS27C64 EPROM Pinout
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
59
TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
Table 5 shows the programming levels required for programming, verifying and reading the EPROM cell. The
paragraphs following the table describe the function of each programming level.
Table 5. TMS320E25 Programming Mode Levels
SIGNAL
NAME
TMS320E25
PIN
TMS27C64
PIN
PROGRAM
VERIFY
PROGRAM
INHIBIT
OUTPUT
DISABLE
PROGRAM
READ
†
E
22
42
20
V
V
V
V
V
IL
IL
PULSE
IH
IL
PULSE
IL
IH
IH
G
22
V
IH
X
V
V
PGM
41
27
PULSE
V
IH
X
V
IH
V
25
1
V
V
V
V
V
V
PP
PP
PP
PP
CC
CC
CC
V
CC
61,35
27,44,10
52
28
V
V
V
CC+1
V
CC+1
CC+1
CC
V
SS
14
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
V
V
V
V
V
V
V
SS
SS
SS
SS
SS
SS
SS
SS
CLKIN
RS
14
65
14
EPT
24
26
Q1-Q8
A12-A10
A9-A7
A6
18-11
40-38
37,36,34
33
11-13,15-19
D
Q
HI-Z
X
Q
OUT
HI-Z
X
IN
OUT
2,23,21,
ADDR
ADDR
ADDR
ADDR
ADDR
ADDR
ADDR
ADDR
ADDR
ADDR
ADDR
ADDR
ADDR
ADDR
ADDR
ADDR
ADDR
ADDR
24,25,3
X
X
4
5
X
X
A5
32
X
X
A4
31
3
X
X
A3-A0
30-28,26
7-10
X
X
†
In accordance with TMS27C64.
LEGEND;
V
V
= TTL high level; V = TTL low level; ADDR = byte address bit
IH
IL
= 12.5 V ± 0.5 V; V
= 5 ± 0.25 V; X = don’t care
CC
PP
PULSE = low-going TTL level pulse; D = byte to be programmed at ADDR
Q
IN
= byte stored at ADDR; RBIT = ROM protect bit.
OUT
erasure
Before programming, the device is erased by exposing the chip through the transparent lid to high-intensity
ultraviolet light (wavelength 2537 Å). The recommended minimum exposure dose (UV-intensity ×
2
2
exposure-time) is 15 W•s/cm . A typical 12 mW/cm , filterless UV lamp will erase the device in 21 minutes. The
lamp should be located approximately 2.5 cm above the chip during erasure. After erasure, all bits are in the
high state. Note that normal ambient light contains the correct wavelength for erasure. Therefore, when using
the TMS320E25, the window should be covered with an opaque label.
fast programming
After erasure (all memory bits in the cell are logic one), logic zeroes are programmed into the desired locations.
The fast programming algorithm, shown in Figure 10, is normally used to program the entire EPROM contents,
although individual locations may be programmed separately. A programmed logic zero can be erased only by
ultraviolet light. Data is presented in parallel (eight bits) on pins Q8-Q1. Once addresses and data are stable,
PGM is pulsed. The programming mode is achieved when V = 12.5 V, PGM = V , V
= 6 V, G = V , and
PP
IL CC
IH
E = V More than one TMS320E25 can be programmed when the devices are connected in parallel. Locations
IL
can be programmed in any order.
Programming uses two types of programming pulses: prime and final. The length of the prime pulse is 1 ms.
After each prime pulse, the byte being programmed is verified. If correct data is read, the final programming
pulse is applied; if correct data is not read, an additional 1-ms prime pulse is applied up to a maximum of 15
times. The final programming pulse is 4 ms times the number of prime programming pulses applied. This
sequence of programming and verification is performed at V
= 6 V, and V
= 12.5 V. When the full fast
CC
PP
programming routine is complete, all bits are verified with V
= V = 5 V.
CC
PP
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
60
TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
program verify
Programmed bits may be verified with V = 12.5 V when G = V , E = V , and PGM = V . Figure 11 shows
PP
IL
IL
IH
the timing for the program and verify operation.
Start
Address = First
Location
V
= 6 ± 0.25 V
CC
V
PP
= 12.5 V ± 0.25
V
X = 0
Program One
1-ms Pulse
Increment X
No
Yes
Fail
Verify
One
X = 25?
Byte
Pass
Program One
Pulse of
3X-ms Duration
Device
Failed
No
Last
Address?
Increment
Address
Yes
V
CC
= V
= 5 V ± 0.25 V
PP
Fail
Compare All
Bytes to Original
Data
Pass
Device
Passed
Figure 10. Fast Programming Flowchart
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
61
TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
Program
Verify
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
A12-A0
Q8-Q1
Address Stable
HI-Z
Address N + 1
IL
/V
IH OH
Data In Stable
Data Out Valid
/V
IL OL
PP
CC
CC + 1
CC
IH
V
PP
V
CC
E
IL
IH
PGM
G
IL
IH
IL
Figure 11. Fast Programming Timing
program inhibit
Programming may be inhibited by maintaining a high level input on the E pin or PGM pin.
read
The EPROM contents may be read independent of the programming cycle, provided the RBIT (ROM protect
bit) has not been programmed. The read is accomplished by setting E to zero and pulsing G low. The contents
of the EPROM location selected by the value on the address inputs appear on Q8-Q1.
output disable
DuringtheEPROMprogrammingprocess, theEPROMdataoutputsmaybedisabled, ifdesired, byestablishing
the output disable state. This state is selected by setting the G and PGM pins high. While output disable is
selected, Q8-Q1 are placed in the high-impedance state.
ROM protection and verification
This section describes the code protection feature included in the EPROM cell, which protects code against
copyright violations. Table 6 shows the programming levels required for protecting and verifying the EPROM.
The paragraphs following the table describe the protect and verify functions.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
62
TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
Table 6. TMS320E25 Protect and Verify EPROM Mode Levels
†
SIGNAL
TMS320E25 PIN
TMS27C64 PIN
ROM PROTECT
PROTECT VERIFY
E
G
22
42
20
V
V
V
V
V
IH
IL
22
IH
IL
PGM
41
27
V
IH
IH
V
25
1
V
V
V
PP
PP
CC
CC
V
CC
61,35
10, 27, 44
52
28
V
CC + 1
V
SS
14
V
SS
V
SS
V
SS
V
PP
V
V
V
V
SS
SS
SS
PP
CLKIN
RS
14
65
14
EPT
24
26
Q8-Q1
18-11
40-38
37, 36, 34
33
11-13, 15-19
Q8 = PULSE
Q8 = RBIT
A12-A10
A9-A7
A6
2, 23, 21,
X
X
X
X
X
X
24, 25, 3
4
5
V
IL
A5
32
X
A4
31
6
V
X
X
IH
A3-A0
30-28, 26
7-10
X
†
In accordance with TMS27C64.
LEGEND;
V
V
= TTL high level; V = TTL low level; V
IL
PP
= 5 V ± 0.25 V
CC
IH
= 12.5 V ± 0.5 V; X = don’t care
PULSE = low-going TTL level pulse; RBIT = ROM protect bit.
EPROM protect
The EPROM protect facility is used to completely disable reading of the EPROM contents to guarantee security
of propietary algorithms. This facility is implemented through a unique EPROM cell called the RBIT (EPROM
protect bit) cell. Once the contents to be protected are programmed into the EPROM, the RBIT is programmed,
disabling access to the EPROM contents and disabling the microprocessor mode on the device. Once
programmed, the RBIT can be cleared only by erasing the entire EPROM array with ultraviolet light, thereby
maintaining security of the propietary algorithm. Programming the RBIT is accomplished using the EPROM
protect cycle, which consists of setting the E, G, PGM, and A4 pins high, V and EPT to 2.5 V ± 0.5 V, and
PP
pulsing Q8 low. The complete sequence of operations involved in programming the RBIT is shown in the
flowchart of Figure 12. The required setups in the figure are detailed in Table 6.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
63
TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
Start
X = 0
Program One
Pulse of 3X-ms
Duration
EPROM
Protect
Setup
Protect
Verify
Setup
Program One
1-ms Pulse
Device
Failed
Verify
RBIT
Device
Passed
X = X + 1
Yes
X = 25?
No
Protect
Verify
Setup
Fail
Verify
RBIT
Pass
EPROM
Protect
Setup
Figure 12. EPROM Protect Flowchart
protect verify
Protect verify is used following the EPROM protect to verify correct programming of the RBIT (see Figure 12).
When using protect verify, Q8 outputs the state of the RBIT. When RBIT = 1, the EPROM is unprotected; when
RBIT = 0, the EPROM is protected. The EPROM protect and verify timings are shown in Figure 13.
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
64
TMS320E25
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
Protect
Verify
V
V
V
V
IH
A4
IL
PP
CC
V
PP
V
CC + 1
V
CC
V
CC
IH
V
E
V
IL
V
IH
PGM
G
V
IL
V
IH
V
V
V
V
V
V
V
IL
/V
IH OH
Q8
HI-Z
HI-Z
HI-Z
/V
IL OL
PP
SS
IH
EPT
A6
IL
Figure 13. EPROM Protect Timing
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
65
INDEX
TMS320 SECOND-GENERATION
DEVICES
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
66
NIL
NIL
NIL
SPRS010B — MAY 1987 — REVISED NOVEMBER 1990
microcomputer/microprocessor mode
accumulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
multiplier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
multiprocessing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
adapter socket . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
addressing modes . . . . . . . . . . . . . . . . . . . . . . . . . 10
ALU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
operation conditions
TMS32020 . . . . . . . . . . . . . . . . . . . . . . . . . . 17, 21
TMS320C25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
TMS320C25-50 . . . . . . . . . . . . . . . . . . . . . . . . . 34
TMS320E25 . . . . . . . . . . . . . . . . . . . . . . . . . 27, 33
overflow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
BIT instruction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Bulletin board Service . . . . . . . . . . . . . . . . . . . . . . 18
clock
overview
TMS32020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
TMS320C25/E25 . . . . . . . . . . . . . . . . . . . . . 28, 29
TMS320C25-50 . . . . . . . . . . . . . . . . . . . . . . 35, 36
TMS320 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
package types . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-5
pin assignments . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
pin nomenclature
description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
development support . . . . . . . . . . . . . . . . . . . . 18, 19
direct addressing . . . . . . . . . . . . . . . . . . . . . . . 10, 17
DMA documentation support . . . . . . . . . . . . . . . . 20
TMS32020/C25/C25-50 . . . . . . . . . . . . . . . . . . . 2
TMS320E25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
EPROM protection/verification . . . . . . . . . . . . 58-65
external interface . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
pinouts
TMS32020/C25/C25-50 . . . . . . . . . . . . . . . . . . . 1
TMS320E25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
programming levels for EPROM . . . . . . . . . . 58-65
flowcharts
EPROM protect . . . . . . . . . . . . . . . . . . . . . . . . . 63
fast . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60, 61
repeat feature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
reflow soldering precaution . . . . . . . . . . . . . . . . . . 54
hotline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
immediate addressing . . . . . . . . . . . . . . . . . . . . . . 10
indirect addressing . . . . . . . . . . . . . . . . . . . . . . 10, 17
instruction set . . . . . . . . . . . . . . . . . . . . . . . . . . 10-16
interrupts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
serial port . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7, 9
shifter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
specification overview . . . . . . . . . . . . . . . . . . . . . . 20
subroutines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
supply current characteristics . . . . . . . . . . . . . . . . 54
switching characteristics
key features
TMS32020 . . . . . . . . . . . . . . . . . . . . . . . 21, 23-26
TMS320C25/E25 . . . . . . . . . . . . . . . . . . 27, 28-33
TMS320C25-50 . . . . . . . . . . . . . . . . . . . 34, 35-40
TMS320 family . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
TMS32020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
TMS320C25/C25-50/E25 . . . . . . . . . . . . . . . . . . 4
timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
mechanical data
timing diagrams . . . . . . . . . . . . . . . . . . 41-53, 62, 65
TMS320 Second-Generation . . . . . . . . . . . 41-47
TMS32020 . . . . . . . . . . . . . . . . . . . 46, 48, 50, 51
TMS320C25/E25 . . . . . . . . . . . . . . 46, 49, 52, 53
TMS32020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
TMS320C25 . . . . . . . . . . . . . . . . . . . . . . . . . 55, 56
TMS320C25-50 . . . . . . . . . . . . . . . . . . . . . . . . . 56
TMS320E25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
memory
TMS3220 product notification . . . . . . . . . . . . . 17
addressing modes . . . . . . . . . . . . . . . . . . . . 10, 17
control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
maps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77001
67
PACKAGE OPTION ADDENDUM
4-May-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
TMS320C25FNA
NRND
PLCC
FN
68
18 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
TMS320C25FNAR
TMS320C25FNL
NRND
NRND
PLCC
PLCC
FN
FN
68
68
TBD
Call TI
Call TI
18 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
TMS320C25FNL33
TMS320C25FNLR
OBSOLETE
NRND
PLCC
PLCC
FN
FN
68
68
TBD
Call TI
Call TI
250 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
TMS320C25FNLW
OBSOLETE
PLCC
FN
68
Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
TMS320C25GBA
TMS320C25GBL
TMS320C25PHL
NRND
NRND
NRND
CPGA
CPGA
QFP
GB
GB
PH
68
68
80
21
21
TBD
TBD
AU
AU
N / A for Pkg Type
N / A for Pkg Type
66 Green (RoHS & CU NIPDAU Level-4-260C-72 HR
no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TMS320C25 :
Military: SMJ320C25
•
NOTE: Qualified Version Definitions:
Military - QML certified for Military and Defense Applications
•
Addendum-Page 1
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