Sony Stud Sensor ICX418ALB User Manual

ICX418ALB  
Diagonal 8mm (Type 1/2) CCD Image Sensor for EIA B/W Video Cameras  
Description  
16 pin DIP (Ceramic)  
The ICX418ALB is an interline CCD solid-state  
image sensor suitable for EIA B/W video cameras  
with a diagonal 8mm (Type 1/2) system. Compared  
with the current product ICX038DLB, basic  
characteristics such as sensitivity, smear, dynamic  
range and S/N are improved drastically.  
This chip features a field period readout system and  
an electronic shutter with variable charge-storage  
time. Also, this outline is miniaturized by using  
Pin 1  
original package. This chip is compatible with the  
2
pins of the ICX038DLB and has the same drive  
conditions.  
V
Features  
High sensitivity (+5.0dB compared with the ICX038DLB)  
Low smear (–5.0dB compared with the ICX038DLB  
High D range (+2.0dB compared with the ICX038DLB)  
High S/N  
12  
3
H
40  
Pin 9  
Optical black position  
(Top View)  
High resolution and low dark current  
Excellent antiblooming characteristics  
Continuous variable-speed shutter  
Substrate bias:  
Adjustment free (external adjustment also possible with 6 to 14V)  
5Vp-p adjustment free (drive also possible with 0 to 9V)  
5V drive  
Reset gate pulse:  
Horizontal register:  
Maximum package dimensions: φ13.2mm  
Device Structure  
Interline CCD image sensor  
Optical size:  
Diagonal 8mm (Type 1/2)  
Number of effective pixels: 768 (H) × 494 (V) approx. 380K pixels  
Total number of pixels:  
811 (H) × 508 (V) approx. 410K pixels  
7.40mm (H) × 5.95mm (V)  
Chip size:  
Unit cell size:  
Optical black:  
8.4µm (H) × 9.8µm (V)  
Horizontal (H) direction: Front 3 pixels, rear 40 pixels  
Vertical (V) direction:  
Horizontal 22  
Front 12 pixels, rear 2 pixels  
Number of dummy bits:  
Vertical 1 (even fields only)  
Silicon  
Substrate material:  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E01908A41  
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ICX418ALB  
Block Diagram and Pin Configuration  
(Top View)  
8
7
6
5
4
3
2
1
Note)  
Horizontal Register  
Note)  
: Photo sensor  
9
10  
11  
12  
13  
14  
15  
16  
Pin Description  
Pin No. Symbol  
Description  
Pin No. Symbol  
Description  
1
2
3
4
5
6
7
8
Vφ4  
Vφ3  
Vφ2  
φSUB  
Vφ1  
VL  
Vertical register transfer clock  
Vertical register transfer clock  
Vertical register transfer clock  
Substrate clock  
9
NC  
10  
11  
12  
13  
14  
15  
16  
NC  
GND  
RD  
GND  
Reset drain bias  
Reset gate clock  
Vertical register transfer clock  
Protective transistor bias  
Output circuit supply voltage  
Signal output  
φRG  
VDSUB  
Hφ1  
Hφ2  
Substrate bias circuit supply voltage  
Horizontal register transfer clock  
Horizontal register transfer clock  
VDD  
VOUT  
– 3 –  
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ICX418ALB  
Absolute Maximum Ratings  
Item  
Substrate clock φSUB – GND  
Ratings  
–0.3 to +50  
–0.3 to +18  
–55 to +10  
–15 to +20  
to +10  
Unit  
V
Remarks  
VDD, VRD, VDSUB, VOUT – GND  
V
Supply voltage  
VDD, VRD, VDSUB, VOUT φSUB  
Vφ1, Vφ2, Vφ3, Vφ4 – GND  
Vφ1, Vφ2, Vφ3, Vφ4 φSUB  
V
V
Clock input voltage  
V
1  
Voltage difference between vertical clock input pins  
Voltage difference between horizontal clock input pins  
Hφ1, Hφ2 – Vφ4  
to +15  
V
to +17  
V
–17 to +17  
–10 to +15  
–55 to +10  
–65 to +0.3  
–0.3 to +30  
–30 to +80  
–10 to +60  
V
φRG – GND  
V
φRG φSUB  
V
VL φSUB  
V
Pins other than GND and φSUB – VL  
Storage temperature  
V
°C  
°C  
Operating temperature  
1  
+27V (Max.) when clock width < 10µs, clock duty factor < 0.1%.  
– 4 –  
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ICX418ALB  
Bias Conditions 1 [when used in substrate bias internal generation mode]  
Item  
Output circuit supply voltage  
Reset drain voltage  
Symbol Min.  
Typ. Max. Unit  
Remarks  
VDD  
VRD  
VL  
14.55 15.0 15.45 V  
14.55 15.0 15.45  
V
V
VRD = VDD  
1  
Protective transistor bias  
Substrate bias circuit supply voltage  
Substrate clock  
VDSUB  
φSUB  
14.55  
15.45  
15.0  
2  
1  
VL setting is the VVL voltage of the vertical transfer clock waveform, or the same supply voltage as the VL  
power supply for the V driver should be used. (When CXD1267AN is used.)  
2  
Do not apply a DC bias to the substrate clock pin, because a DC bias is generated within the CCD.  
Bias Conditions 2 [when used in substrate bias external adjustment mode]  
Item  
Symbol Min.  
Typ. Max. Unit  
Remarks  
Output circuit supply voltage  
Reset drain voltage  
VDD  
14.55 15.0 15.45 V  
VRD  
14.55 15.0 15.45  
V
VRD = VDD  
3  
4  
Protective transistor bias  
VL  
Substrate bias circuit supply voltage  
Substrate voltage adjustment range  
Substrate voltage adjustment precision  
VDSUB  
VSUB  
VSUB  
5  
5  
6.0  
–3  
14.0  
+3  
V
%
3  
VL setting is the VVL voltage of the vertical transfer clock waveform, or the same supply voltage as the VL  
power supply for the V driver should be used. (When CXD1267AN is used.)  
Connect to GND or leave open.  
4  
5  
The setting value of the substrate voltage (VSUB) is indicated on the back of the image sensor by a  
special code. When adjusting the substrate voltage externally, adjust the substrate voltage to the indicated  
voltage. The adjustment precision is ±3%. However, this setting value has not significance when used in  
substrate bias internal generation mode.  
VSUB code — one character indication  
Code and optimal setting correspond to each other as follows.  
VSUB code  
E
f
G
h
J
K
L
m
N
P
Q
R
S
T
U
V
W
Optimal setting 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0  
<Example> "L" VSUB = 9.0V  
DC Characteristics  
Item  
Symbol Min.  
Typ.  
5.0  
Max.  
10.0  
Unit  
mA  
Remarks  
Output circuit supply current  
IDD  
– 5 –  
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ICX418ALB  
Clock Voltage Conditions  
Waveform  
diagram  
Item  
Symbol  
Min. Typ. Max. Unit  
Remarks  
Readout clock voltage VVT  
14.55 15.0 15.45  
V
V
V
1
2
2
VVH1, VVH2  
VVH3, VVH4  
–0.05  
–0.2  
0
0
0.05  
0.05  
VVH = (VVH1 + VVH2)/2  
VVL1, VVL2,  
VVL3, VVL4  
–9.6 –9.0 –8.5  
V
VVL = (VVL3 + VVL4)/2  
2
VφV  
8.3  
9.0 9.65 Vp-p  
Vφ = VVHn – VVLn (n = 1 to 4)  
V
2
2
2
2
2
2
2
2
3
3
4
4
4
5
| VVH1 – VVH2 |  
VVH3 – VVH  
VVH4 – VVH  
VVHH  
0.1  
0.1  
0.1  
0.5  
0.5  
0.5  
0.5  
V
V
V
V
V
V
V
Vertical transfer clock  
voltage  
–0.25  
–0.25  
High-level coupling  
High-level coupling  
Low-level coupling  
Low-level coupling  
VVHL  
VVLH  
VVLL  
VφH  
4.75 5.0 5.25 Vp-p  
Horizontal transfer  
clock voltage  
VHL  
–0.05  
0
0.05  
V
V
1
VRGL  
Reset gate clock  
VφRG  
4.5  
5.0  
5.5 Vp-p  
0.8  
23.0 24.0 25.0 Vp-p  
1  
voltage  
VRGLH – VRGLL  
VφSUB  
V
Low-level coupling  
Substrate clock voltage  
1  
Input the reset gate clock without applying a DC bias. In addition, the reset gate clock can also be driven  
with the following specifications.  
Waveform  
diagram  
Item  
Symbol  
Min. Typ. Max. Unit  
Remarks  
VRGL  
VφRG  
–0.2  
8.5  
0
0.2  
V
4
4
Reset gate clock  
voltage  
9.0  
9.5 Vp-p  
– 6 –  
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ICX418ALB  
Clock Equivalent Circuit Constant  
Symbol  
CφV1, CφV3  
CφV2, CφV4  
CφV12, CφV34  
CφV23, CφV41  
CφH1  
Typ.  
2700  
2700  
820  
330  
100  
91  
Item  
Min.  
Max. Unit  
Remarks  
pF  
pF  
pF  
pF  
pF  
pF  
pF  
pF  
pF  
Capacitance between vertical transfer clock  
and GND  
Capacitance between vertical transfer clocks  
Capacitance between horizontal transfer clock  
and GND  
CφH2  
CφHH  
47  
Capacitance between horizontal transfer clocks  
Capacitance between reset gate clock and GND  
Capacitance between substrate clock and GND  
CφRG  
11  
CφSUB  
680  
91  
R1, R3  
Vertical transfer clock series resistor  
Vertical transfer clock ground resistor  
R2, R4  
100  
68  
RGND  
Vφ2  
Vφ1  
CφV12  
R1  
R2  
Hφ1  
Hφ2  
CφHH  
CφV1  
CφV2  
CφV41  
CφV23  
CφH2  
CφH1  
RGND  
CφV3  
CφV4  
R4  
R3  
CφV34  
Vφ4  
Vφ3  
Vertical transfer clock equivalent circuit  
Horizontal transfer clock equivalent circuit  
– 7 –  
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ICX418ALB  
Drive Clock Waveform Conditions  
(1) Readout clock waveform  
100%  
90%  
VVT  
φM  
φM  
2
10%  
0%  
0V  
tr  
twh  
tf  
(2) Vertical transfer clock waveform  
Vφ1  
Vφ3  
VVH1  
VVHH  
VVHH  
VVH  
VVH  
VVHH  
VVHH  
VVHL  
VVHL  
VVHL  
VVHL  
VVH3  
VVL1  
VVL3  
VVLH  
VVLH  
VVLL  
VVLL  
VVL  
VVL  
Vφ2  
Vφ4  
VVHH  
VVHH  
VVH4  
VVHH  
VVHH  
VVH  
VVH  
VVHL  
VVHL  
VVHL  
VVHL  
VVH2  
VVLH  
VVL2VVLH  
VVLL  
VVLL  
VVL4  
VVL  
VVL  
VVH = (VVH1 + VVH2)/2  
VVL = (VVL3 + VVL4)/2  
VφV = VVHn – VVLn (n = 1 to 4)  
– 8 –  
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ICX418ALB  
(3) Horizontal transfer clock waveform  
tr  
twh  
tf  
90%  
VφH  
twl  
10%  
VHL  
tr  
twh  
tf  
(4) Reset gate clock waveform  
VRGH  
twl  
VφRG  
Point A  
RG waveform  
VRGL + 0.5V  
VRGL  
VRGLH  
VRGLL  
VRGLm  
Hφ1  
waveform  
+2.5V  
VRGLH is the maximum value and VRGLL is the minimum value of the coupling waveform during the period from  
Point A in the above diagram until the rising edge of RG. In addition, VRGL is the average value of VRGLH and  
VRGLL.  
VRGL = (VRGLH + VRGLL)/2  
Assuming VRGH is the minimum value during the period twh, then:  
VφRG = VRGH – VRGL  
Negative overshoot level during the falling edge of RG is VRGLm.  
(5) Substrate clock waveform  
100%  
90%  
φM  
VφSUB  
φM  
2
10%  
VSUB  
0%  
tr  
twh  
tf  
– 9 –  
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ICX418ALB  
Clock Switching Characteristics  
twh  
twl  
tr  
tf  
Symbol  
VT  
Item  
Unit  
Remarks  
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.  
Readout clock  
2.3 2.5  
0.5  
0.5  
15  
µs During readout  
Vertical transfer Vφ1, Vφ2,  
1  
250 ns  
clock  
Vφ3, Vφ4  
During  
imaging  
2  
Hφ  
20  
20  
15 19  
15 19 ns  
During  
parallel-serial  
conversion  
5.38  
0.01  
0.01  
0.01  
µs  
Hφ1  
5.38  
51  
0.01  
Hφ2  
ns  
µs  
11 13  
1.5 1.8  
3
3
Reset gate clock φRG  
When draining  
charge  
0.5  
0.5  
Substrate clock φSUB  
1  
2  
When vertical transfer clock driver CXD1267AN is used.  
tf tr – 2ns.  
two  
Symbol  
Item  
Horizontal transfer clock  
Unit Remarks  
3  
Min. Typ. Max.  
16 20  
Hφ1, Hφ2  
ns  
3  
The overlap period for twh and twl of horizontal transfer clocks Hφ1 and Hφ2 is two.  
– 10 –  
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ICX418ALB  
Image Sensor Characteristics  
Item Symbol Min.  
Sensitivity  
(Ta = 25°C)  
Measurement  
method  
Typ.  
Max. Unit  
Remarks  
S
880  
1100  
mV  
mV  
1
2
3
4
4
5
6
7
8
Saturation signal  
Smear  
Ysat  
Sm  
1000  
Ta = 60°C  
–115  
–105  
20  
25  
2
dB  
%
Zone 0 and I  
Zone 0 to II'  
Ta = 60°C  
SH  
Video signal shading  
%
Vdt  
Vdt  
F
mV  
mV  
%
Dark signal  
Dark signal shading  
Flicker  
1
Ta = 60°C  
2
Lag  
0.5  
%
Lag  
Zone Definition of Video Signal Shading  
768 (H)  
14  
14  
12  
V
10  
H
8
H
8
494 (V)  
Zone 0, I  
Zone II, II'  
10  
Ignored region  
Effective pixel region  
V
10  
– 11 –  
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ICX418ALB  
Image Sensor Characteristics Measurement Method  
Measurement conditions  
1) In the following measurements, the device drive conditions are at the typical values of the bias and clock  
voltage conditions. (when used with substrate bias external adjustment, set the substrate voltage to the  
value indicated on the device.)  
2) In the following measurements, spot blemishes are excluded and, unless otherwise specified, the optical  
black level (OB) is used as the reference for the signal output, which is taken as the value of Y signal output  
or chroma signal output of the measurement system.  
Definition of standard imaging conditions  
1) Standard imaging condition I:  
Use a pattern box (luminance 706cd/m2, color temperature of 3200K halogen source) as a subject. (Pattern  
for evaluation is not applicable.) Use a testing standard lens with CM500S (t = 1.0mm) as an IR cut filter and  
image at F8. The luminous intensity to the sensor receiving surface at this point is defined as the standard  
sensitivity testing luminous intensity.  
2) Standard imaging condition II:  
Image a light source (color temperature of 3200K) with a uniformity of brightness within 2% at all angles.  
Use a testing standard lens with CM500S (t = 1.0mm) as an IR cut filter. The luminous intensity is adjusted  
to the value indicated in each testing item by the lens diaphragm.  
1. Sensitivity  
Set to standard imaging condition I. After selecting the electronic shutter mode with a shutter speed of  
1/250s, measure the signal output (Vs) at the center of the screen and substitute the value into the  
following formula.  
250  
60  
S = Vs ×  
[mV]  
2. Saturation signal  
Set to standard imaging condition II. After adjusting the luminous intensity to 10 times the intensity with  
average value of the signal output, 200mV, measure the minimum value of the signal output.  
3. Smear  
Set to standard imaging condition II. With the lens diaphragm at F5.6 to F8, adjust the luminous intensity to  
500 times the intensity with average value of the signal output, 200mV. When the readout clock is stopped  
and the charge drain is executed by the electronic shutter at the respective H blankings, measure the  
maximum value VSm [mV] of the signal output and substitute the value into the following formula.  
1
500  
1
10  
VSm  
200  
×
×
Sm = 20 × log  
[dB] (1/10V method conversion value)  
4. Video signal shading  
Set to standard imaging condition II. With the lens diaphragm at F5.6 to F8, adjust the luminous intensity so  
that the average value of the signal output is 200mV. Then measure the maximum (Vmax [mV]) and  
minimum (Vmin [mV]) values of the signal output and substitute the values into the following formula.  
SH = (Vmax – Vmin)/200 × 100 [%]  
– 12 –  
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ICX418ALB  
5. Dark signal  
Measure the average value of the signal output (Vdt [mV]) with the device ambient temperature 60°C and  
the device in the light-obstructed state, using the horizontal idle transfer level as a reference.  
6. Dark signal shading  
After measuring 5, measure the maximum (Vdmax [mV]) and minimum (Vdmin [mV]) values of the dark  
signal output and substitute the values into the following formula.  
Vdt = Vdmax – Vdmin [mV]  
7. Flicker  
Set to standard imaging condition II. Adjust the luminous intensity so that the average value of the signal  
output is 200mV, and then measure the difference in the signal level between fields (Vf [mV]). Then  
substitute the value into the following formula.  
Fy = (Vf/200) × 100 [%]  
10. Lag  
Adjust the signal output value generated by strobe light to 200mV. After setting the strobe light so that it  
strobes with the following timing, measure the residual signal (Vlag). Substitute the value into the following  
formula.  
Lag = (Vlag/200) × 100 [%]  
FLD  
V1  
Light  
Strobe light  
timing  
signal output 200mV  
Ylag (lag)  
Output  
– 13 –  
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Drive Circuit 1 (substrate bias internal generation mode)  
15V  
1
2
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
100k  
3
1
1/35V  
4
XSUB  
XV2  
–9V  
5
CXD1267AN  
3.3/16V  
6
XV1  
7
XSG1  
XV3  
22/16V  
1M  
8
9
XSG2  
XV4  
10  
22/20V  
0.01  
3.3/20V  
1
2
3
4
5
6
7
8
9
ICX418  
(BOTTOM VIEW)  
16 15 14 13 12 11 10  
Hφ1  
0.01  
Hφ2  
100  
[ A]  
CCD OUT  
3.9k  
0.01  
RG  
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Drive Circuit 2 (substrate bias external adjustment mode)  
15V  
270k  
0.1  
15k  
47k  
1
2
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
56k  
1/35V  
1/35V  
15k  
1/35V  
100k 27k  
39k  
0.1  
3
0.1  
4
XSUB  
XV2  
–9V  
5
CXD1267AN  
3.3/16V  
6
XV1  
7
XSG1  
XV3  
22/16V  
1M  
8
9
XSG2  
XV4  
10  
22/20V  
0.01  
3.3/20V  
1
2
3
4
5
6
7
8
9
ICX418  
(BOTTOM VIEW)  
16 15 14 13 12 11 10  
Hφ1  
0.01  
Hφ2  
100  
[ A]  
CCD OUT  
3.9k  
0.01  
RG  
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ICX418ALB  
Spectral Sensitivity Characteristics (Excludes lens characteristics and light source characteristics)  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
400  
500  
600  
700  
800  
900  
1000  
Wave Length [nm]  
Sensor Readout Clock Timing Chart  
V1  
V2  
2.5  
Odd Field  
V3  
V4  
1.6  
2.5 2.5 2.5  
33.5  
0.2  
V1  
V2  
Even Field  
V3  
V4  
Unit: µs  
– 16 –  
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Drive Timing Chart (Vertical Sync)  
FLD  
VD  
BLK  
HD  
V1  
V2  
V3  
V4  
1 3 5  
2 4 6  
2 4  
1 3 5  
6
493  
494  
494  
493  
2 4 6  
1 3 5  
1 3 5  
2 4 6  
CCD  
OUT  
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Drive Timing Chart (Horizontal Sync)  
HD  
BLK  
H1  
H2  
RG  
V1  
V2  
V3  
V4  
SUB  
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ICX418ALB  
Notes on Handling  
1) Static charge prevention  
CCD image sensors are easily damaged by static discharge. Before handling be sure to take the following  
protective measures.  
a) Either handle bare handed or use non-chargeable gloves, clothes or material.  
Also use conductive shoes.  
b) When handling directly use an earth band.  
c) Install a conductive mat on the floor or working table to prevent the generation of static electricity.  
d) Ionized air is recommended for discharge when handling CCD image sensor.  
e) For the shipment of mounted substrates, use boxes treated for the prevention of static charges.  
2) Soldering  
a) Make sure the package temperature does not exceed 80°C.  
b) Solder dipping in a mounting furnace causes damage to the glass and other defects. Use a ground 30W  
soldering iron and solder each pin in less than 2 seconds. For repairs and remount, cool sufficiently.  
c) To dismount an image sensor, do not use a solder suction equipment. When using an electric desoldering  
tool, use a thermal controller of the zero cross On/Off type and connect it to ground.  
3) Dust and dirt protection  
Image sensors are packed and delivered by taking care of protecting its glass plates from harmful dust and  
dirt. Clean glass plates with the following operations as required, and use them.  
a) Perform all assembly operations in a clean room (class 1000 or less).  
b) Do not either touch glass plates by hand or have any object come in contact with glass surfaces. Should  
dirt stick to a glass surface, blow it off with an air blower. (For dirt stuck through static electricity ionized  
air is recommended.)  
c) Clean with a cotton bud and ethyl alcohol if grease stained. Be careful not to scratch the glass.  
d) Keep in a case to protect from dust and dirt. To prevent dew condensation, preheat or precool when  
moving to a room with great temperature differences.  
e) When a protective tape is applied before shipping, just before use remove the tape applied for electrostatic  
protection. Do not reuse the tape.  
4) Do not expose to strong light (sun rays) for long periods. For continuous using under cruel condition exceeding  
the normal using condition, consult our company.  
5) Exposure to high temperature or humidity will affect the characteristics. Accordingly avoid storage or usage in  
such conditions.  
6) CCD image sensors are precise optical equipment that should not be subject to too much mechanical shocks.  
– 19 –  
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Package Outline  
Unit: mm  
16 pin DIP (300mil)  
3.29 ± 0.3  
A
2.54  
C
1.84  
4.0  
16  
B
9
13.2 ± 0.3  
16  
9
φ
V
H
8
1
8
1
6.175  
1st. pin Index  
12.0 ± 0.15  
1. “A” is the center of the effective image area.  
12.35 ± 0.3  
0.7  
2. The point “B” of the package is the horizontal reference.  
B'  
The point “B'” of the package is the vertical reference.  
1.5  
1.5  
3. The bottom “C” of the package is the height reference.  
4. The center of the effective image area relative to the center of the package ()  
is (H, V) = (0, 0) ± 0.15mm.  
~ ~  
5. The rotation angle of the effective image area relative to H and V is ± 1˚.  
6. The height from the bottom “C” to the effective image area is 1.41 ± 0.15mm.  
7. The tilt of the effective image area relative to the bottom “C” is less than 60µm.  
8. The thickness of the cover glass is 0.75mm, and the refractive index is 1.5.  
0.6  
1.27  
0.3  
PACKAGE STRUCTURE  
Center of the package : The center is halfway between two pairs of opposite sides,  
as measured from “B”, “B'”.  
M
0.3  
Ceramic  
PACKAGE MATERIAL  
LEAD TREATMENT  
LEAD MATERIAL  
GOLD PLATING  
42 ALLOY  
PACKAGE MASS  
0.90g  
DRAWING NUMBER  
AS-B4-01(E)  
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