Renesas Switch 2SK3069 User Guide

2SK3069  
Silicon N Channel MOS FET  
High Speed Power Switching  
REJ03G1062-1100  
(Previous: ADE-208-694I)  
Rev.11.00  
Sep 07, 2005  
Features  
Low on-resistance  
RDS(on) = 6 mtyp.  
Low drive current  
4 V gate drive device can be driven from 5 V source  
Outline  
RENESAS Package code: PRSS0004AC-A  
(Package name: TO-220AB)  
D
1. Gate  
2. Drain  
(Flange)  
3. Source  
G
1
2
3
S
Rev.11.00 Sep 07, 2005 page 1 of 7  
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2SK3069  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
200  
150  
100  
50  
1000  
300  
100  
30  
10  
3
Operation in  
this area is  
limited by R  
DS(on)  
1
0.3  
0.1  
Ta = 25°C  
0
3
30  
50  
100  
150  
200  
0.1 0.3  
1
10  
100  
Case Temperature TC (°C)  
Drain to Source Voltage VDS (V)  
Typical Output Characteristics  
Typical Transfer Characteristics  
100  
80  
100  
80  
VGS = 10 V  
Pulse Test  
5 V  
VDS = 10 V  
Pulse Test  
4 V  
3.5 V  
60  
60  
40  
40  
3 V  
25°C  
20  
20  
75°C  
2.5 V  
8
Tc = –25°C  
0
0
1
2
3
4
5
2
4
6
10  
Drain to Source Voltage VDS (V)  
Gate to Source Voltage VGS (V)  
Drain to Source Saturation Voltage  
vs. Gate to Source Voltage  
Static Drain to Source on State  
Resistance vs. Drain Current  
2.0  
1.6  
1.2  
0.8  
0.4  
100  
50  
Pulse Test  
Pulse Test  
20  
10  
5
VGS = 4 V  
10 V  
ID = 50 A  
20 A  
2
1
10 A  
12  
200  
100  
50  
0
4
8
16  
20  
20  
5
10  
1
2
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Rev.11.00 Sep 07, 2005 page 3 of 7  
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2SK3069  
Static Drain to Source on State  
Resistance vs. Temperature  
Forward Transfer Admittance  
vs. Drain Current  
500  
20  
16  
12  
8
Pulse Test  
VDS = 10 V  
Pulse Test  
200  
100  
50  
20 A  
Tc = –25°C  
ID = 50 A  
10 A  
20  
10  
5
4 V  
25°C  
10, 20, 50 A  
75°C  
VGS = 10 V  
2
1
4
0
0.5  
–50  
0
50  
100  
150  
200  
0.1 0.3  
1
3
10  
30  
100  
Case Temperature TC (°C)  
Drain Current ID (A)  
Body to Drain Diode Reverse  
Recovery Time  
Typical Capacitance  
vs. Drain to Source Voltage  
VGS = 0  
30000  
10000  
1000  
500  
f = 1 MHz  
Ciss  
200  
100  
50  
3000  
1000  
Coss  
Crss  
300  
100  
20  
10  
di / dt = 50 A / µs  
VGS = 0, Ta = 25°C  
0.1 0.3  
1
3
10  
30  
100  
0
10  
20  
30  
40  
50  
Reverse Drain Current IDR (A)  
Drain to Source Voltage VDS (V)  
Dynamic Input Characteristics  
Switching Characteristics  
1000  
500  
100  
80  
60  
40  
20  
20  
ID = 75 A  
t
d(off)  
VGS  
16  
12  
8
t
f
200  
100  
50  
VDD = 50 V  
25 V  
10 V  
VDS  
t
r
t
d(on)  
VDD = 50 V  
25 V  
10 V  
4
0
20  
10  
VGS = 10 V, VDD = 30 V  
PW = 5 µs, duty < 1 %  
0
10 20 50 100  
2
5
80  
160  
240  
320  
400  
1
0.5  
0.1 0.2  
Drain Current ID (A)  
Gate Charge Qg (nc)  
Rev.11.00 Sep 07, 2005 page 4 of 7  
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2SK3069  
Reverse Drain Current vs.  
Source to Drain Voltage  
Maximum Avalanche Energy vs.  
Channel Temperature Derating  
250  
200  
150  
100  
100  
IAP = 50 A  
10 V  
VDD = 25 V  
duty < 0.1 %  
Rg > 50 Ω  
80  
60  
40  
20  
5 V  
VGS = 0, –5 V  
50  
0
Pulse Test  
1.6 2.0  
0
0.4  
0.8  
1.2  
25  
50  
75  
100  
125  
150  
Source to Drain Voltage VSD (V)  
Channel Temperature Tch (°C)  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
1
Tc = 25°C  
D = 1  
0.5  
0.3  
0.1  
θ
θ
γ
θ
ch – c(t) = s (t) ch – c  
ch – c = 1.25°C/W, Tc = 25°C  
PW  
T
P
DM  
D =  
0.03  
0.01  
0.01  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (S)  
Avalanche Test Circuit  
Avalanche Waveform  
VDSS  
L
1
2
2
EAR  
=
L IAP  
VDS  
Monitor  
VDSS – VDD  
IAP  
Monitor  
V(BR)DSS  
IAP  
Rg  
VDS  
VDD  
D. U. T  
ID  
Vin  
15 V  
50 Ω  
VDD  
0
Rev.11.00 Sep 07, 2005 page 5 of 7  
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2SK3069  
Switching Time Test Circuit  
Vin Monitor  
Switching Time Waveforms  
90%  
Vout  
Monitor  
D.U.T.  
RL  
10%  
10%  
Vin  
Vout  
10%  
VDD  
= 30 V  
Vin  
10 V  
50 Ω  
90%  
90%  
t
t
t
r
d(on)  
t
f
d(off)  
Rev.11.00 Sep 07, 2005 page 6 of 7  
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2SK3069  
Package Dimensions  
JEITA Package Code  
SC-46  
RENESAS Code  
PRSS0004AC-A  
Package Name  
MASS[Typ.]  
1.8g  
Unit: mm  
TO-220AB / TO-220ABV  
11.5 Max  
10.16 0.2  
4.44 0.2  
9.5  
8.0  
+0.1  
–0.08  
1.26 0.15  
φ 3.6  
2.7 Max  
1.5 Max  
0.76 0.1  
2.54 0.5  
0.5 0.1  
2.54 0.5  
Ordering Information  
Part Name  
Quantity  
Shipping Container  
2SK3069-E  
500 pcs  
Box (Sack)  
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of  
production before ordering the product.  
Rev.11.00 Sep 07, 2005 page 7 of 7  
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Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
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publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
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RENESAS SALES OFFICES  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
Renesas Technology Hong Kong Ltd.  
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2730-6071  
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145  
Renesas Technology Malaysia Sdn. Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .3.0  
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