2SK3069
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1062-1100
(Previous: ADE-208-694I)
Rev.11.00
Sep 07, 2005
Features
•
Low on-resistance
RDS(on) = 6 mΩ typ.
•
•
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
1. Gate
2. Drain
(Flange)
3. Source
G
1
2
3
S
Rev.11.00 Sep 07, 2005 page 1 of 7
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2SK3069
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
200
150
100
50
1000
300
100
30
10
3
Operation in
this area is
limited by R
DS(on)
1
0.3
0.1
Ta = 25°C
0
3
30
50
100
150
200
0.1 0.3
1
10
100
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
100
80
100
80
VGS = 10 V
Pulse Test
5 V
VDS = 10 V
Pulse Test
4 V
3.5 V
60
60
40
40
3 V
25°C
20
20
75°C
2.5 V
8
Tc = –25°C
0
0
1
2
3
4
5
2
4
6
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
2.0
1.6
1.2
0.8
0.4
100
50
Pulse Test
Pulse Test
20
10
5
VGS = 4 V
10 V
ID = 50 A
20 A
2
1
10 A
12
200
100
50
0
4
8
16
20
20
5
10
1
2
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.11.00 Sep 07, 2005 page 3 of 7
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2SK3069
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
500
20
16
12
8
Pulse Test
VDS = 10 V
Pulse Test
200
100
50
20 A
Tc = –25°C
ID = 50 A
10 A
20
10
5
4 V
25°C
10, 20, 50 A
75°C
VGS = 10 V
2
1
4
0
0.5
–50
0
50
100
150
200
0.1 0.3
1
3
10
30
100
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
VGS = 0
30000
10000
1000
500
f = 1 MHz
Ciss
200
100
50
3000
1000
Coss
Crss
300
100
20
10
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
0.1 0.3
1
3
10
30
100
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
1000
500
100
80
60
40
20
20
ID = 75 A
t
d(off)
VGS
16
12
8
t
f
200
100
50
VDD = 50 V
25 V
10 V
VDS
t
r
t
d(on)
VDD = 50 V
25 V
10 V
4
0
20
10
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
0
10 20 50 100
2
5
80
160
240
320
400
1
0.5
0.1 0.2
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.11.00 Sep 07, 2005 page 4 of 7
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2SK3069
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
250
200
150
100
100
IAP = 50 A
10 V
VDD = 25 V
duty < 0.1 %
Rg > 50 Ω
80
60
40
20
5 V
VGS = 0, –5 V
50
0
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 1.25°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
VDSS
L
1
2
2
EAR
=
• L • IAP
•
VDS
Monitor
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
50 Ω
VDD
0
Rev.11.00 Sep 07, 2005 page 5 of 7
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2SK3069
Switching Time Test Circuit
Vin Monitor
Switching Time Waveforms
90%
Vout
Monitor
D.U.T.
RL
10%
10%
Vin
Vout
10%
VDD
= 30 V
Vin
10 V
50 Ω
90%
90%
t
t
t
r
d(on)
t
f
d(off)
Rev.11.00 Sep 07, 2005 page 6 of 7
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2SK3069
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name
MASS[Typ.]
1.8g
Unit: mm
TO-220AB / TO-220ABV
11.5 Max
10.16 0.2
4.44 0.2
9.5
8.0
+0.1
–0.08
1.26 0.15
φ 3.6
2.7 Max
1.5 Max
0.76 0.1
2.54 0.5
0.5 0.1
2.54 0.5
Ordering Information
Part Name
Quantity
Shipping Container
2SK3069-E
500 pcs
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.11.00 Sep 07, 2005 page 7 of 7
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