Philips Stereo Amplifier TDA1015 User Manual

INTEGRATED CIRCUITS  
DATA SHEET  
TDA1015  
1 to 4 W audio power amplifier  
November 1982  
Product specification  
File under Integrated Circuits, IC01  
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Philips Semiconductors  
Product specification  
1 to 4 W audio power amplifier  
TDA1015  
November 1982  
3
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Philips Semiconductors  
Product specification  
1 to 4 W audio power amplifier  
TDA1015  
RATINGS  
Limiting values in accordance with Absolute Maximum System (IEC 134)  
Supply voltage  
VP  
max.  
max.  
18  
V
A
Peak output current  
IOM  
2,5  
Total power dissipation  
see derating curve Fig.2  
Storage temperature  
Tstg  
55 to + 150  
25 to + 150  
°C  
°C  
Operating ambient temperature  
A.C. short-circuit duration of load  
during sine-wave drive; VP = 12 V  
Tamb  
tsc  
max.  
100 hours  
Fig.2 Power derating curve.  
HEATSINK DESIGN  
Assume VP = 12 V; RL = 4 ; Tamb = 45 °C maximum.  
The maximum sine-wave dissipation is 1,8 W.  
150 45  
Rth j-a = Rth j-tab + Rth tab-h + Rth h-a  
=
= 58 K/W.  
----------------------  
1, 8  
Where Rth j-a of the package is 45 K/W, so no external heatsink is required.  
November 1982  
4
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Philips Semiconductors  
Product specification  
1 to 4 W audio power amplifier  
TDA1015  
D.C. CHARACTERISTICS  
Supply voltage range  
VP  
3,6 to 18  
V
Repetitive peak output current  
IORM  
<
2
A
typ.  
<
14  
25  
mA  
mA  
Total quiescent current at VP = 12 V  
Itot  
A.C. CHARACTERISTICS  
Tamb = 25 °C; VP = 12 V; RL = 4 ; f = 1 kHz unless otherwise specified; see also Fig.3.  
A.F. output power at dtot = 10% (note 1)  
with bootstrap:  
VP = 12 V; RL = 4 Ω  
VP = 9 V; RL = 4 Ω  
VP = 6 V; RL = 4 Ω  
without bootstrap:  
VP = 12 V; RL = 4 Ω  
Po  
Po  
Po  
typ.  
typ.  
typ.  
4,2  
2,3  
1,0  
W
W
W
Po  
typ.  
3,0  
W
Voltage gain:  
preamplifier (note 2)  
power amplifier  
total amplifier  
Gv1  
typ.  
typ.  
typ.  
23  
29  
dB  
dB  
dB  
dB  
%
Gv2  
Gv tot  
52  
49 to 55  
0,3  
Total harmonic distortion at Po = 1,5 W  
dtot  
B
typ.  
<
1,0  
%
Frequency response; 3 dB (note 3)  
60 Hz to 15  
kHz  
Input impedance:  
>
100  
200  
20  
kΩ  
kΩ  
kΩ  
kΩ  
V
preamplifier (note 4)  
|Zi1|  
typ.  
typ.  
typ.  
typ.  
power amplifier  
|Zi2|  
Output impedance preamplifier  
Output voltage preamplifier (r.m.s. value); dtot < 1% (note 2)  
Noise output voltage (r.m.s. value; note 5)  
RS = 0 Ω  
|Zo1|  
1
Vo(rms)  
0,8  
Vn(rms)  
Vn(rms)  
typ.  
typ.  
typ.  
typ.  
0,2  
0,5  
8
mV  
mV  
µV  
dB  
RS = 10 kΩ  
Noise output voltage at f = 500 kHz (r.m.s. value); B = 5 kHz; RS = 0 Vn(rms)  
Ripple rejection (note 6); f = 100 Hz RR  
38  
November 1982  
5
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Philips Semiconductors  
Product specification  
1 to 4 W audio power amplifier  
TDA1015  
Notes  
1. Measured with an ideal coupling capacitor to the speaker load.  
2. Measured with a load resistor of 20 k.  
3. Measured at Po = 1 W; the frequency response is mainly determined by C1 and C3 for the low frequencies and by  
C4 for the high frequencies.  
4. Independent of load impedance of preamplifier.  
5. Unweighted r.m.s. noise voltage measured at a bandwidth of 60 Hz to 15 kHz (12 dB/octave).  
6. Ripple rejection measured with a source impedance between 0 and 2 k(maximum ripple amplitude: 2 V).  
7. The tab must be electrically floating or connected to the substrate (pin 9).  
Fig.3 Test circuit.  
November 1982  
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Philips Semiconductors  
Product specification  
1 to 4 W audio power amplifier  
TDA1015  
APPLICATION INFORMATION  
Fig.4 Circuit diagram of a 1 to 4 W amplifier.  
Fig.5 Total quiescent current as a function of supply voltage.  
7
November 1982  
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Philips Semiconductors  
Product specification  
1 to 4 W audio power amplifier  
TDA1015  
Fig.6 Total harmonic distortion as a function of output power across RL;  
with bootstrap; −−without  
bootstrap; f = 1 kHz; typical values. The available output power is 5% higher when measured at pin 2  
(due to series resistance of C10).  
Fig.7 Output power across RL as a function of supply voltage with bootstrap; dtot = 10%; typical values.  
The available output power is 5% higher when measured at pin 2 (due to series resistance of C10).  
November 1982  
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Philips Semiconductors  
Product specification  
1 to 4 W audio power amplifier  
TDA1015  
Fig.8 Voltage gain as a function of frequency; Po relative to 0 dB = 1 W; VP = 12 V; RL = 4 .  
Fig.9 Total harmonic distortion as a function of frequency; P = 1 W; VP = 12 V; RL = 4 .  
November 1982  
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Philips Semiconductors  
Product specification  
1 to 4 W audio power amplifier  
TDA1015  
Fig.10 Ripple rejection as a function of R2 (see Fig.4); RS = 0; typical values.  
Fig.11 Noise output voltage as a function of R2 (see Fig.4); measured according to A-curve; capacitor C5 is  
adapted for obtaining a constant bandwidth.  
November 1982  
10  
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Philips Semiconductors  
Product specification  
1 to 4 W audio power amplifier  
TDA1015  
Fig.12 Noise output voltage as a function of frequency; curve a: total amplifier; curve b: power amplifier;  
B = 5 kHz; RS = 0; typical values.  
Fig.13 Voltage gain as a function of R2 (see Fig.4).  
November 1982  
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Philips Semiconductors  
Product specification  
1 to 4 W audio power amplifier  
TDA1015  
PACKAGE OUTLINE  
SIL9MPF: plastic single in-line medium power package with fin; 9 leads  
SOT110-1  
D
D
1
q
A
2
P
P
1
A
3
q
2
q
1
A
A
4
E
pin 1 index  
c
L
1
9
b
Q
e
Z
b
w
M
2
b
1
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
Z
max.  
A
max.  
2
(1)  
(1)  
E
UNIT  
A
A
b
b
b
c
D
D
e
L
P
P
Q
q
q
q
2
w
A
3
4
1
2
1
1
1
18.5  
17.8  
8.7 15.8 1.40 0.67 1.40 0.48 21.8 21.4 6.48  
8.0 15.4 1.14 0.50 1.14 0.38 21.4 20.7 6.20  
3.9 2.75 3.4 1.75 15.1  
3.4 2.50 3.2 1.55 14.9  
4.4  
4.2  
5.9  
5.7  
2.54  
mm  
3.7  
0.25 1.0  
Note  
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
92-11-17  
95-02-25  
SOT110-1  
November 1982  
12  
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Philips Semiconductors  
Product specification  
1 to 4 W audio power amplifier  
TDA1015  
SOLDERING  
Introduction  
There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and  
surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for  
surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often  
used.  
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our  
“IC Package Databook” (order code 9398 652 90011).  
Soldering by dipping or by wave  
The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the  
joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds.  
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the  
specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may  
be necessary immediately after soldering to keep the temperature within the permissible limit.  
Repairing soldered joints  
Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more  
than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to  
10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
November 1982  
13  
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