Cypress CY7C1266V18 User Manual

CY7C1266V18, CY7C1277V18

CY7C1268V18, CY7C1270V18

36-Mbit DDR-II+ SRAM 2-Word

Burst Architecture (2.5 Cycle Read Latency)

Features

Functional Description

■ 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36)

■ 300 MHz to 400 MHz clock for high bandwidth

■ 2-Word burst for reducing address bus frequency

The CY7C1266V18, CY7C1277V18, CY7C1268V18, and

CY7C1270V18 are 1.8V Synchronous Pipelined SRAMs

equipped with DDR-II+ architecture. The DDR-II+ consists of an

SRAM core with advanced synchronous peripheral circuitry.

Addresses for read and write are latched on alternate rising

edges of the input (K) clock. Write data is registered on the rising

edges of both K and K. Read data is driven on the rising edges

of both K and K. Each address location is associated with two

8-bit words (CY7C1266V18), 9-bit words (CY7C1277V18),

18-bit words (CY7C1268V18), or 36-bit words (CY7C1270V18),

that burst sequentially into or out of the device.

■ Double Data Rate (DDR) interfaces

(data transferred at 800 MHz) at 400 MHz

■ Read latency of 2.5 clock cycles

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

Asynchronous inputs include output impedance matching input

■ Echo clocks (CQ and CQ) simplify data capture in high speed

systems

(ZQ). Synchronous data outputs (Q, sharing the same physical

pins as the data inputs, D) are tightly matched to the two output

echo clocks CQ/CQ, eliminating the need to capture data

separately from each individual DDR SRAM in the system

design.

■ Data valid pin (QVLD) to indicate valid data on the output

■ Synchronous internally self-timed writes

[1]

■ Core V = 1.8V ± 0.1V; IO V

= 1.4V to V

DDQ

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the K or K input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-ball FBGA package (15 x 17 x 1.4 mm)

■ Offered in both in Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Delay Lock Loop (DLL) for accurate data placement

Configurations

With Read Cycle Latency of 2.5 cycles:

CY7C1266V18 – 4M x 8

CY7C1277V18 – 4M x 9

CY7C1268V18 – 2M x 18

CY7C1270V18 – 1M x 36

Selection Guide

Description

400 MHz

400

375 MHz

375

333 MHz

333

300 MHz

300

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

1280

1210

1080

1000

Note

1. The QDR consortium specification for V

is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting

DDQ

= 1.4V to V

DDQ

Cypress Semiconductor Corporation

Document Number: 001-06347 Rev. *D

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised March 11, 2008

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CY7C1266V18, CY7C1277V18

CY7C1268V18, CY7C1270V18

Logic Block Diagram (CY7C1268V18)

Write

Reg

Write

Reg

(19:0)

Address

Output

Logic

Control

CLK

Gen.

R/W

DOFF

Read Data Reg.

REF

Reg.

Control

Logic

R/W

[17:0]

BWS

[1:0]

QVLD

Logic Block Diagram (CY7C1270V18)

Write

Reg

Write

Reg

(18:0)

Address

Output

Logic

Control

CLK

Gen.

R/W

DOFF

Read Data Reg.

REF

Reg.

Control

Logic

R/W

[35:0]

BWS

[3:0]

QVLD

Document Number: 001-06347 Rev. *D

Page 3 of 27

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CY7C1266V18, CY7C1277V18

CY7C1268V18, CY7C1270V18

Pin Configurations

165-Ball FBGA (15 x 17 x 1.4 mm) Pinout

CY7C1266V18 (4M x 8)

NWS₁

NC/288M

DQ3

NC/72M

NC/144M

R/W

NWS₀

V_SS

DQ4

V_DDQ

V_SS

V_DD

V_SS

V_DDQ

DQ2

V_DD

V_SS

DQ5

V_DDQ

V_REF

V_DDQ

V_REF

DQ1

DOFF

DQ0

DQ6

V_SS

DQ7

QVLD

TDO

TCK

TMS

TDI

CY7C1277V18 (4M x 9)

DQ3

NC/72M

NC/144M

R/W

NC/288M

BWS₀

V_SS

DQ4

V_DDQ

V_SS

V_DD

V_SS

V_DDQ

DQ2

V_DD

V_SS

DQ5

V_DDQ

V_REF

V_DDQ

V_REF

DQ1

DOFF

DQ0

DQ6

V_SS

DQ7

QVLD

DQ8

TDO

TCK

TMS

TDI

Document Number: 001-06347 Rev. *D

Page 4 of 27

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CY7C1266V18, CY7C1277V18

CY7C1268V18, CY7C1270V18

Pin Configurations (continued)

165-Ball FBGA (15 x 17 x 1.4 mm) Pinout

CY7C1268V18 (2M x 18)

DQ8

NC/72M

NC/144M

R/W

BWS₁

NC/288M

DQ9

DQ7

BWS₀

V_SS

DQ10

V_SS

DQ12

DQ11

V_DDQ

V_SS

V_DD

V_SS

V_DDQ

DQ6

V_DD

V_SS

DQ5

DQ13

V_DDQ

V_REF

V_DDQ

V_REF

DQ4

DOFF

DQ14

DQ3

DQ2

DQ15

V_SS

DQ1

DQ16

DQ17

QVLD

DQ0

TDO

TCK

TMS

TDI

CY7C1270V18 (1M x 36)

NC/72M

NC/144M

R/W

BWS₂

BWS₃

BWS₁

BWS₀

DQ27

DQ18

DQ28

DQ19

DQ17

DQ8

DQ7

DQ16

V_SS

DQ29

V_SS

DQ30

DQ31

V_REF

DQ20

DQ21

DQ22

V_DDQ

DQ32

DQ23

DQ24

V_DDQ

V_SS

V_DD

V_SS

V_DDQ

DQ15

DQ6

V_DD

V_SS

DQ5

DQ14

V_DDQ

V_REF

DQ13

DQ12

DOFF

DQ4

DQ3

DQ2

DQ33

DQ35

DQ34

DQ25

DQ26

V_SS

DQ11

DQ1

DQ10

DQ0

QVLD

DQ9

TDO

TCK

TMS

TDI

Document Number: 001-06347 Rev. *D

Page 5 of 27

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CY7C1266V18, CY7C1277V18

CY7C1268V18, CY7C1270V18

Pin Definitions

Pin Name

Pin Description

Data Input/Output Signals. Inputs are sampled on the rising edge of K and K clocks during

valid write operations. These pins drive out the requested data during a read operation. Valid

data is driven out on the rising edge of both the K and K clocks during read operations. When

Input/Output-

Synchronous

[x:0]

read access is deselected, Q

are automatically tri-stated.

[x:0]

–

CY7C1266V18 DQ

[7:0]

–

CY7C1277V18 DQ

[8:0]

–

CY7C1268V18 DQ

[17:0]

[35:0]

–

CY7C1270V18 DQ

Input-

Synchronous Load. Sampled on the rising edge of the K clock. This input is brought LOW when

Synchronous a bus cycle sequence is to be defined. This definition includes address and read/write direction.

All transactions operate on a burst of 2 data. LD must meet the setup and hold times around

edge of K.

NWS , NWS

Input-

Nibble Write Select 0, 1, Active LOW (CY7C1266V18 only). Sampled on the rising edge of

Synchronous the K and K clocks during write operations. Used to select which nibble is written into the device

during the current portion of the write operations. Nibbles not written remain unaltered.

NWS controls D

and NWS controls D

[7:4]

[3:0]

All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble

Write Select ignores the corresponding nibble of data and not written into the device.

BWS BWS

Input-

Byte Write Select 0, 1, 2, and 3, Active LOW. Sampled on the rising edge of the K and K clocks

Synchronous during write operations. Used to select which byte is written into the device during the current

portion of the write operations. Bytes not written remain unaltered.

CY7C1277V18 − BWS controls D

BWS , BWS

[8:0]

CY7C1268V18 − BWS controls D

and BWS controls D

[17:9].

, BWS controls D

CY7C1270V18 − BWS controls D

, BWS controls D

and BWS

[8:0]

[17:9]

[26:18] 3

controls D

[35:27]

All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write

Select ignores the corresponding byte of data and not written into the device.

Input-

Address Inputs. Sampled on the rising edge of the K clock during active read and write opera-

Synchronous tions. These address inputs are multiplexed for both read and write operations. Internally, the

device is organized as 4M x 8 (2 arrays each of 2M x 8) for CY7C1266V18, 4M x 9 (2 arrays

each of 2M x 9) for CY7C1277V18, 2M x 18 (2 arrays each of 1M x 18) for CY7C1268V18, and

1M x 36 (2 arrays each of 512K x 36) for CY7C1270V18.

R/W

Input-

Synchronous Read/Write Input. When LD is LOW, this input designates the access type (Read

Synchronous when R/W is HIGH, Write when R/W is LOW) for loaded address. R/W must meet the setup and

hold times around edge of K.

QVLD

Valid Output Valid Output Indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ

Indicator

and CQ.

Input-

Clock

Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the

device and to drive out data through Q

when in single clock mode. All accesses are initiated

[x:0]

on the rising edge of K.

Input-

Clock

Negative Input Clock Input. K is used to capture synchronous data being presented to the

device and to drive out data through Q when in single clock mode.

[x:0]

Clock Output Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the

input clock (K) of the DDR-II+. The timing for the echo clocks is shown in “Switching Character-

istics” on page 22.

Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the

input clock (K) of the DDR-II+. The timing for the echo clocks is shown in “Switching Character-

istics” on page 22.

Clock Output

Document Number: 001-06347 Rev. *D

Page 6 of 27

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CY7C1266V18, CY7C1277V18

CY7C1268V18, CY7C1270V18

Pin Definitions (continued)

Pin Name

Pin Description

Input

Output Impedance Matching Input. This input is used to tune the device outputs to the system

data bus impedance. CQ, CQ, and Q output impedance are set to 0.2 x RQ, where RQ is a

[x:0]

resistor connected between ZQ and ground. Alternatively, this pin can be connected directly to

, which enables the minimum impedance mode. This pin cannot be connected directly to

DDQ

GND or left unconnected.

DOFF

Input

DLL Turn Off, Active LOW. Connecting this pin to ground turns off the DLL inside the device.

The timing in the DLL turned off operation is different from that listed in this data sheet. For

normal operation, this pin can be connected to a pull up through a 10 Kohm or less pull up

resistor. The device behaves in DDR-I mode when the DLL is turned off. In this mode, the device

can be operated at a frequency of up to 167 MHz with DDR-I timing.

TDO

Output

Input

N/A

TDO for JTAG.

TCK

TCK Pin for JTAG.

TDI

TDI Pin for JTAG.

TMS

TMS Pin for JTAG.

Not Connected to the Die. Can be tied to any voltage level.

Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs,

NC/72M

NC/144M

NC/288M

N/A

Input-

REF

Reference and AC measurement points.

Power Supply Power Supply Inputs to the Core of the Device.

Ground

Ground for the Device.

Power Supply Power Supply Inputs for the Outputs of the Device.

DDQ

Document Number: 001-06347 Rev. *D

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CY7C1266V18, CY7C1277V18

CY7C1268V18, CY7C1270V18

Byte Write Operations

Functional Overview

Byte write operations are supported by the CY7C1268V18. A

write operation is initiated as described in the Write Operations

The CY7C1266V18, CY7C1277V18, CY7C1268V18, and

CY7C1270V18 are synchronous pipelined Burst SRAMs

equipped with a DDR interface.

section. The bytes that are written are determined by BWS and

BWS , which are sampled with each set of 18-bit data words.

Accesses for both ports are initiated on the Positive Input Clock

(K). All synchronous input and output timing refer to the rising

edge of the input clocks (K and K).

Asserting the appropriate Byte Write Select input during the data

portion of a write latches the data being presented and written

into the device. Deasserting the Byte Write Select input during

the data portion of a write enables the data stored in the device

to that byte to remain unaltered. This feature can be used to

simplify read/modify/write operations to a byte write operation.

All synchronous data inputs (D

) pass through input registers

[x:0]

controlled by the rising edge of the input clocks (K and K). All

synchronous data outputs (Q ) pass through output registers

[x:0]

controlled by the rising edge of the input clocks (K and K).

Double Data Rate Operation

All synchronous control (R/W, LD, BWS ) inputs pass through

[0:X]

The CY7C1268V18 enables high-performance operation

through high clock frequencies (achieved through pipelining) and

DDR mode of operation. The CY7C1268V18 requires three No

Operation (NOP) cycles when transitioning from a read to a write

cycle.

input registers controlled by the rising edge of the input clock

(K\K).

CY7C1268V18 is described in the following sections. The same

basic descriptions apply to CY7C1266V18, CY7C1277V18, and

CY7C1270V18.

If a read occurs after a write cycle, address and data for the write

are stored in registers. The write information must be stored

because the SRAM cannot perform the last word write to the

array without conflicting with the read. The data stays in this

after the read(s), the stored data from the earlier write is written

into the SRAM array. This is called a Posted Write.

Read Operations

The CY7C1268V18 is organized internally as a single array of

2M x 18. Accesses are completed in a burst of two sequential

18-bit data words. Read operations are initiated by asserting

R/W HIGH and LD LOW at the rising edge of the positive input

clock (K). Following the next two K clock rising edges, the corre-

sponding 18-bit word of data from this address location is driven

If a read is performed on the same address on which a write is

performed in the previous cycle, the SRAM reads out the most

current data. The SRAM does this by bypassing the memory

array and reading the data from the registers.

onto the Q

, using K as the output timing reference. On the

[17:0]

subsequent rising edge of K the next 18-bit data word is driven

onto the Q . The requested data is valid 0.45 ns from the

[17:0]

rising edge of the Input clock (K and K). To maintain the internal

logic, each read access must be allowed to complete. Read

accesses can be initiated on every rising edge of the positive

input clock (K).

Depth Expansion

Depth expansion requires replicating the LD control signal for

each bank. All other control signals can be common between

banks as appropriate.

When read access is deselected, the CY7C1268V18 completes

the pending Read transactions. Synchronous internal circuitry

automatically tri-states the outputs following the next rising edge

of the negative input clock (K). This enables a seamless

transition between devices without the insertion of wait states in

a depth expanded memory.

Programmable Impedance

An external resistor, RQ, must be connected between the ZQ pin

on the SRAM and V to enable the SRAM to adjust its output

driver impedance. The value of RQ must be 5x the value of the

intended line impedance driven by the SRAM. The allowable

range of RQ to guarantee impedance matching with a tolerance

of ±15%, is between 175Ω and 350Ω, with V

output impedance is adjusted every 1024 cycles upon power up

Write Operations

= 1.5V. The

DDQ

Write operations are initiated by asserting R/W LOW and LD

LOW at the rising edge of the positive input clock (K). The

address presented to Address inputs is stored in the Write

Address register. On the following K clock rise, the data

to account for drifts in supply voltage and temperature.

Echo Clocks

presented to D

is latched and stored into the 18-bit Write

[17:0]

Echo clocks are provided on the DDR-II+ to simplify data capture

on high speed systems. Two echo clocks are generated by the

DDR-II+. CQ is referenced with respect to K and CQ is refer-

enced with respect to K. These are free running clocks and are

synchronized to the input clock of the DDR-II+. The timing for the

echo clocks is shown in “Switching Characteristics” on page 22.

Data register provided BWS

are both asserted active. On the

[1:0]

subsequent rising edge of the Negative Input Clock (K), the infor-

mation presented to D is also stored into the Write Data

[17:0]

are both asserted active. The 36 bits

[1:0]

of data are then written into the memory array at the specified

location. Write accesses can be initiated on every rising edge of

the positive input clock (K). Doing so pipelines the data flow such

that 18 bits of data can be transferred into the device on every

rising edge of the input clocks (K and K).

Valid Data Indicator (QVLD)

QVLD is provided on the DDR-II+ to simplify data capture on high

speed systems. The QVLD is generated by the DDR-II+ device

along with data output. This signal is also edge aligned with the

echo clock and follows the timing of any data pin. This signal is

asserted half a cycle before valid data arrives.

When write access is deselected, the device ignores all inputs

after the pending write operations have been completed.

Document Number: 001-06347 Rev. *D

Page 8 of 27

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CY7C1266V18, CY7C1277V18

CY7C1268V18, CY7C1270V18

the

application

note,

DLL

Considerations

Delay Lock Loop (DLL)

QDRII/DDRII/QDRII+/DDRII+. The DLL can also be reset by

slowing or stopping the input clocks K and K for a minimum of 30

ns. However, it is not necessary for the DLL to be reset to lock to

the frequency you want. During power up, when the DOFF is tied

HIGH, the DLL is locked after 2048 cycles of stable clock.

These chips use a DLL that is designed to function between 120

MHz and the specified maximum clock frequency. The DLL may

be disabled by applying ground to the DOFF pin. When the DLL

is turned off, the device behaves in DDR-I mode (with 1.0 cycle

latency and a longer access time). For more information, refer to

Application Example

Figure 1 shows two DDR-II+ used in an application.

Figure 1. Application Example

CQ/CQ

SRAM#1

LD R/W

SRAM#2

R = 250ohms

LD R/W

Addresses

Cycle Start

R/W

Source CLK

BUS

MASTER

(CPU or ASIC)

Echo Clock1/Echo Clock1

Echo Clock2/Echo Clock2

Truth Table

[2, 3, 4, 5, 6, 7]

The truth table for CY7C1266V18, CY7C1277V18, CY7C1268V18, and CY7C1270V18 follows.

Operation

LD R/W

Write Cycle:

L-H

D(A) at K(t + 1) ↑

D(A + 1) at K(t + 1) ↑

Load address; wait one cycle; input write data on consecutive

K and K rising edges.

Read Cycle: (2.5 cycle Latency)

Load address; wait two and half cycle; read data on consec-

L-H

Q(A) at K(t + 2) ↑

Q(A + 1) at K(t + 3) ↑

utive K and K rising edges.

NOP: No Operation

L-H

High-Z

Standby: Clock Stopped

Stopped

Previous State

Notes

2. X = “Don’t Care,” H = Logic HIGH, L = Logic LOW, ↑ represents rising edge.

3. Device powers up deselected with the outputs in a tri-state condition.

4. “A” represents address location latched by the devices when transaction was initiated. A + 1 represents the address sequence in the burst.

5. “t” represents the cycle at which a read/write operation is started. t + 1, t + 2, and t + 3 are the first, second, and third clock cycles succeeding the “t” clock cycle.

6. Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges.

7. Cypress recommends that K = K = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging

symmetrically.

Document Number: 001-06347 Rev. *D

Page 9 of 27

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CY7C1266V18, CY7C1277V18

CY7C1268V18, CY7C1270V18

Write Cycle Descriptions

The write cycle description table for CY7C1266V18 and CY7C1268V18 follows.

[2, 8]

BWS / BWS /

Comments

NWS

L–H

–

During the data portion of a write sequence:

CY7C1266V18 − both nibbles (D

) are written into the device.

[7:0]

CY7C1268V18 − both bytes (D

) are written into the device.

[17:0]

–

L–H

–

L-H During the data portion of a write sequence:

CY7C1266V18 − both nibbles (D

) are written into the device.

[7:0]

CY7C1268V18 − both bytes (D

[17:0]

–

During the data portion of a write sequence:

CY7C1266V18 − only the lower nibble (D

) is written into the device, D

remains unaltered.

[3:0]

[7:4]

[17:9]

CY7C1268V18 − only the lower byte (D

[8:0]

L–H During the data portion of a write sequence:

CY7C1266V18 − only the lower nibble (D

) is written into the device, D

remains unaltered.

[3:0]

[7:4]

CY7C1268V18 − only the lower byte (D

) is written into the device, D

[8:0]

[17:9]

L–H

–

During the data portion of a write sequence:

CY7C1266V18 − only the upper nibble (D

) is written into the device, D

remains unaltered.

[7:4]

[3:0]

[8:0]

CY7C1268V18 − only the upper byte (D

[17:9]

L–H During the data portion of a write sequence:

CY7C1266V18 − only the upper nibble (D

) is written into the device, D

remains unaltered.

[7:4]

[3:0]

[8:0]

CY7C1268V18 − only the upper byte (D

[17:9]

L–H

–

No data is written into the devices during this portion of a write operation.

L–H No data is written into the devices during this portion of a write operation.

Write Cycle Descriptions

The write cycle description table for CY7C1277V18 follows.

[2, 8]

BWS

L-H

–

Comments

During the data portion of a write sequence, the single byte (D

–

) is written into the device.

[8:0]

L-H During the data portion of a write sequence, the single byte (D

L-H

–

No data is written into the device during this portion of a write operation.

L-H No data is written into the device during this portion of a write operation.

Note

8. Assumes a write cycle was initiated per the Write Cycle Descriptions tables. NWS , NWS , BWS , BWS , BWS , and BWS can be altered on different portions

of a write cycle, as long as the setup and hold requirements are met.

Document Number: 001-06347 Rev. *D

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CY7C1268V18, CY7C1270V18

Write Cycle Descriptions

The write cycle description table for CY7C1270V18 follows.

[2, 8]

BWS

Comments

L-H

–

During the data portion of a write sequence, all four bytes (D

into the device.

) are written

[35:0]

–

L-H

–

L-H During the data portion of a write sequence, all four bytes (D

into the device.

[35:0]

–

During the data portion of a write sequence, only the lower byte (D

) is

[8:0]

written into the device. D

remains unaltered.

[35:9]

L-H During the data portion of a write sequence, only the lower byte (D

written into the device. D remains unaltered.

[8:0]

[35:9]

L-H

–

During the data portion of a write sequence, only the byte (D

) is written

[17:9]

into the device. D

and D

remain unaltered.

[8:0]

[35:18]

L-H During the data portion of a write sequence, only the byte (D

into the device. D and D remain unaltered.

) is written

[17:9]

[8:0]

[35:18]

L-H

–

During the data portion of a write sequence, only the byte (D

) is written

[26:18]

[35:27]

into the device. D

and D

remain unaltered.

[17:0]

[35:27]

L-H During the data portion of a write sequence, only the byte (D

into the device. D and D remain unaltered.

[17:0]

[35:27]

L-H

–

During the data portion of a write sequence, only the byte (D

into the device. D remains unaltered.

[26:0]

L-H During the data portion of a write sequence, only the byte (D

into the device. D remains unaltered.

[26:0]

L-H

–

No data is written into the device during this portion of a write operation.

L-H No data is written into the device during this portion of a write operation.

Document Number: 001-06347 Rev. *D

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CY7C1266V18, CY7C1277V18

CY7C1268V18, CY7C1270V18

Instruction Register

IEEE 1149.1 Serial Boundary Scan (JTAG)

Three-bit instructions can be serially loaded into the instruction

and TDO pins as shown in “TAP Controller Block Diagram” on

page 15. Upon power up, the instruction register is loaded with

the IDCODE instruction. It is also loaded with the IDCODE

instruction if the controller is placed in a reset state as described

in the previous section.

These SRAMs incorporate a serial boundary scan test access

port (TAP) in the FBGA package. This part is fully compliant with

IEEE Standard #1149.1-2001. The TAP operates using JEDEC

standard 1.8V IO logic levels.

Disabling the JTAG Feature

It is possible to operate the SRAM without using the JTAG

When the TAP controller is in the Capture-IR state, the two least

significant bits are loaded with a binary ‘01’ pattern to enable fault

isolation of the board level serial test path.

feature. To disable the TAP controller, tie TCK LOW (V ) to

prevent device clocking. TDI and TMS are internally pulled up

and may be unconnected. They may alternatively be connected

to V through a pull up resistor. TDO must be left unconnected.

Upon power up, the device comes up in a reset state, which does

not interfere with the operation of the device.

Bypass Register

To save time when serially shifting data through registers, it is

sometimes advantageous to skip certain chips. The bypass

and TDO pins. This shifts data through the SRAM with minimal

delay. The bypass register is set LOW (V ) when the BYPASS

instruction is executed.

Test Access Port – Test Clock

The test clock is used only with the TAP controller. All inputs are

captured on the rising edge of TCK. All outputs are driven from

the falling edge of TCK.

Boundary Scan Register

Test Mode Select

The boundary scan register is connected to all of the input and

output pins on the SRAM. Several no connect (NC) pins are also

included in the scan register to reserve pins for higher density

devices.

The TMS input is used to give commands to the TAP controller

and is sampled on the rising edge of TCK. You can leave this pin

unconnected if the TAP is not used. The pin is pulled up inter-

nally, resulting in a logic HIGH level.

The boundary scan register is loaded with the contents of the

RAM input and output ring when the TAP controller is in the

Capture-DR state and is then placed between the TDI and TDO

pins when the controller is moved to the Shift-DR state. The

EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can

be used to capture the contents of the input and output ring.

Test Data-In (TDI)

The TDI pin is used to serially input information into the registers

and can be connected to the input of any of the registers. The

is loaded into the TAP instruction register. For information about

loading the instruction register, see the “TAP Controller State

Diagram” on page 14. TDI is internally pulled up and can be

unconnected if the TAP is unused in an application. TDI is

connected to the most significant bit (MSB) on any register.

“Boundary Scan Order” on page 18 shows the order in which the

bits are connected. Each bit corresponds to one of the bumps on

the SRAM package. The MSB of the register is connected to TDI,

and the LSB is connected to TDO.

Identification (ID) Register

Test Data-Out (TDO)

The ID register is loaded with a vendor-specific, 32-bit code

during the Capture-DR state when the IDCODE command is

loaded in the instruction register. The IDCODE is hardwired into

the SRAM and can be shifted out when the TAP controller is in

the Shift-DR state. The ID register has a vendor code and other

information described in “Identification Register Definitions” on

page 17.

The TDO output pin is used to serially clock data-out from the

registers. Whether the output is active depends on the current

state of the TAP state machine (see “Instruction Codes” on

page 17). The output changes on the falling edge of TCK. TDO

is connected to the least significant bit (LSB) of any register.

Performing a TAP Reset

A reset is performed by forcing TMS HIGH (V ) for five rising

TAP Instruction Set

edges of TCK. This RESET does not affect the operation of the

SRAM and may be performed while the SRAM is operating. At

power up, the TAP is reset internally to ensure that TDO comes

up in a High-Z state.

Eight different instructions are possible with the three-bit

instruction register. All combinations are listed in “Instruction

Codes” on page 17. Three of these instructions are listed as

RESERVED and must not be used. The other five instructions

are described in this section in detail.

TAP Registers

Instructions are loaded into the TAP controller during the Shift-IR

state when the instruction register is placed between TDI and

TDO. During this state, instructions are shifted through the

instruction register through the TDI and TDO pins. To execute

the instruction after it is shifted in, the TAP controller must be

moved into the Update-IR state.

Registers are connected between the TDI and TDO pins and

scans data into and out of the SRAM test circuitry. Only one

registers. Data is serially loaded into the TDI pin on the rising

edge of TCK. Data is output on the TDO pin on the falling edge

of TCK.

Document Number: 001-06347 Rev. *D

Page 12 of 27

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IDCODE

PRELOAD places an initial data pattern at the latched parallel

outputs of the boundary scan register cells before the selection

of another boundary scan test operation.

The IDCODE instruction loads a vendor-specific, 32-bit code into

the instruction register. It also places the instruction register

between the TDI and TDO pins and shifts the IDCODE out of the

device when the TAP controller enters the Shift-DR state. The

IDCODE instruction is loaded into the instruction register upon

power up or whenever the TAP controller is in a Test-Logic-Reset

state.

The shifting of data for the SAMPLE and PRELOAD phases can

occur concurrently when required — that is, while data captured

is shifted out, the preloaded data can be shifted in.

BYPASS

When the BYPASS instruction is loaded in the instruction register

and the TAP is placed in a Shift-DR state, the bypass register is

placed between the TDI and TDO pins. The advantage of the

BYPASS instruction is that it shortens the boundary scan path

when multiple devices are connected together on a board.

SAMPLE Z

The SAMPLE Z instruction connects the boundary scan register

between the TDI and TDO pins when the TAP controller is in a

Shift-DR state. The SAMPLE Z command puts the output bus

into a High-Z state until the next command is issued during the

Update-IR state.

EXTEST

The EXTEST instruction drives the preloaded data out through

the system output pins. This instruction also connects the

boundary scan register for serial access between the TDI and

TDO in the Shift-DR controller state.

SAMPLE/PRELOAD

SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When

the SAMPLE/PRELOAD instructions are loaded into the

instruction register and the TAP controller is in the Capture-DR

state, a snapshot of data on the inputs and output pins is

captured in the boundary scan register.

EXTEST Output Bus Tri-State

IEEE Standard 1149.1 mandates that the TAP controller be able

to put the output bus into a tri-state mode.

Be aware that the TAP controller clock can only operate at a

frequency up to 20 MHz, although the SRAM clock operates

more than an order of magnitude faster. Because there is a large

difference in the clock frequencies, it is possible that during the

Capture-DR state, an input or output may undergo a transition.

The TAP may then try to capture a signal while in transition

(metastable state). This does not harm the device, but there is

no guarantee as to the value that is captured. Repeatable results

may not be possible.

The boundary scan register has a special bit located at bit #108.

When this scan cell, called the “extest output bus tri-state,” is

latched into the preload register during the Update-DR state in

the TAP controller, it directly controls the state of the output

(Q-bus) pins, when the EXTEST is entered as the current

instruction. When HIGH, it enables the output buffers to drive the

output bus. When LOW, this bit places the output bus into a

High-Z condition.

To guarantee that the boundary scan register captures the

correct value of a signal, the SRAM signal must be stabilized

long enough to meet the TAP controller's capture setup plus hold

times (t and t ). The SRAM clock input might not be captured

correctly if there is no way in a design to stop (or slow) the clock

during a SAMPLE/PRELOAD instruction. If this is an issue, it is

still possible to capture all other signals and simply ignore the

value of the CK and CK captured in the boundary scan register.

This bit can be set by entering the SAMPLE/PRELOAD or

EXTEST command, and then shifting the desired bit into that cell,

during the Shift-DR state. During Update-DR, the value loaded

into that shift-register cell latches into the preload register. When

the EXTEST instruction is entered, this bit directly controls the

output Q-bus pins. Note that this bit is preset HIGH to enable the

output when the device is powered up, and also when the TAP

controller is in the Test-Logic-Reset state.

After the data is captured, it is possible to shift out the data by

putting the TAP into the Shift-DR state. This places the boundary

scan register between the TDI and TDO pins.

Reserved

These instructions are not implemented but are reserved for

future use. Do not use these instructions.

Document Number: 001-06347 Rev. *D

Page 13 of 27

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TAP Controller State Diagram

The state diagram for the TAP controller follows.

[9]

TEST-LOGIC

RESET

TEST-LOGIC/

IDLE

SELECT

DR-SCAN

SELECT

IR-SCAN

CAPTURE-DR

CAPTURE-IR

SHIFT-DR

SHIFT-IR

EXIT1-DR

EXIT1-IR

PAUSE-DR

PAUSE-IR

EXIT2-DR

EXIT2-IR

UPDATE-DR

UPDATE-IR

Note

9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.

Document Number: 001-06347 Rev. *D

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TAP Controller Block Diagram

Bypass Register

Selection

Circuitry

Selection

Circuitry

TDO

TDI

Instruction Register

31 30

Identification Register

108

Boundary Scan Register

TCK

TMS

TAP Controller

TAP Electrical Characteristics

[10, 1 1 , 12]

Over the Operating Range

Parameter

Description

Test Conditions

= −2.0 mA

Min

1.4

1.6

Max

Unit

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

OH1

OH2

OL1

OL2

= −100 μA

= 2.0 mA

0.4

0.2

= 100 μA

0.65V

+ 0.3

Input LOW Voltage

–0.3

0.35V

Input and OutputLoad Current

GND ≤ V ≤ V

−5

μA

Notes

10. These characteristics apply to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in “Electrical Characteristics” on page 20.

11. Overshoot: V (AC) < V + 0.3V (pulse width less than t /2).

/2). Undershoot: V (AC) > − 0.3V (pulse width less than t

DDQ

CYC

12. All voltage refers to ground.

Document Number: 001-06347 Rev. *D

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TAP AC Switching Characteristics

[13, 14]

Over the Operating Range

Parameter

Description

Min

Max

Unit

TCK Clock Cycle Time

TCK Clock Frequency

TCK Clock HIGH

TCYC

MHz

TCK Clock LOW

Setup Times

TMS Setup to TCK Clock Rise

TDI Setup to TCK Clock Rise

Capture Setup to TCK Rise

TMSS

TDIS

Hold Times

TMS Hold after TCK Clock Rise

TDI Hold after Clock Rise

TMSH

TDIH

Capture Hold after Clock Rise

Output Times

TCK Clock LOW to TDO Valid

TCK Clock LOW to TDO Invalid

TDOV

TDOX

TAP Timing and Test Conditions

Figure 2 shows the TAP timing and test conditions.

[14]

Figure 2. TAP Timing and Test Conditions

0.9V

ALL INPUT PULSES

0.9V

50Ω

1.8V

TDO

Z = 50Ω

C = 20 pF

GND

(a)

Test Clock

TCK

TCYC

TMSH

TMSS

Test Mode Select

TMS

TDIS

TDIH

Test Data In

TDI

Test Data Out

TDO

TDOV

TDOX

Notes

13. t and t refer to the setup and hold time requirements of latching data from the boundary scan register.

14. Test conditions are specified using the load in TAP AC Test Conditions. t /t = 1 ns.

Document Number: 001-06347 Rev. *D

Page 16 of 27

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Identification Register Definitions

Value

Instruction

Field

Description

CY7C1266V18

CY7C1277V18

000

CY7C1268V18

CY7C1270V18

Revision

000

Version number.

Number (31:29)

Cypress Device 11010111000000111 11010111000001111 11010111000010111 11010111000100111 Defines the type

ID (28:12)

of SRAM.

Cypress JEDEC

ID (11:1)

00000110100

Enables unique

identification of

SRAM vendor.

ID Register

Presence (0)

Indicates the

presence of an

ID register.

Scan Register Sizes

Bit Size

Instruction

Bypass

109

Boundary Scan

Instruction Codes

Instruction

EXTEST

Code

000

Description

Captures the input/output ring contents.

IDCODE

001

Loads the ID register with the vendor ID code and places the register between

TDI and TDO. This operation does not affect SRAM operation.

SAMPLE Z

010

Captures the input/output contents. Places the boundary scan register between

TDI and TDO. Forces all SRAM output drivers to a High-Z state.

RESERVED

011

100

Do Not Use: This instruction is reserved for future use.

SAMPLE/PRELOAD

Captures the input/output ring contents. Places the boundary scan register

between TDI and TDO. Does not affect the SRAM operation.

RESERVED

BYPASS

101

110

111

Do Not Use: This instruction is reserved for future use.

Places the bypass register between TDI and TDO. This operation does not affect

SRAM operation.

Document Number: 001-06347 Rev. *D

Page 17 of 27

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Boundary Scan Order

Bit #

Bump ID

Bit #

Bump ID

10G

Bit #

Bump ID

Bit #

Bump ID

11F

11G

10F

11E

10E

10D

11P

10P

10N

10C

11D

10M

11N

11B

11C

100

101

102

103

104

105

106

107

108

11L

11M

10B

11A

10A

10L

11K

10K

Internal

10J

11J

11H

Document Number: 001-06347 Rev. *D

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DLL Constraints

Power Up Sequence in DDR-II+ SRAM

■ DLL uses K clock as its synchronizing input. The input must

have low phase jitter, which is specified as t

DDR-II+ SRAMs must be powered up and initialized in a

predefined manner to prevent undefined operations. During

power up, when the DOFF is tied HIGH, the DLL gets locked after

2048 cycles of stable clock.

KC Var

■ The DLL functions at frequencies down to 120 MHz.

■ If the input clock is unstable and the DLL is enabled, then the

DLL may lock onto an incorrect frequency, causing unstable

SRAM behavior. To avoid this, provide 2048 cycles stable clock

to relock to the desired clock frequency.

Power Up Sequence

■ Apply power with DOFF tied HIGH (all other inputscan be HIGH

or LOW)

❐ Apply V before V

DDQ

❐ Apply V

before V

or at the same time as V

DDQ

REF REF

■ Provide stable power and clock (K, K) for 2048 cycles to lock

the DLL

Power Up Waveforms

Figure 3. Power Up Waveforms

Start Normal

Operation

Unstable Clock

> 2048 Stable Clock

Clock Start (Clock Starts after V /V

DD DDQ

is Stable)

/V Stable (< 0.1V DC per 50 ns)

DD DDQ

Fix HIGH (tie to V

DDQ

)

DOFF

Document Number: 001-06347 Rev. *D

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Current into Outputs (LOW)......................................... 20 mA

Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V

Latch up Current..................................................... >200 mA

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the

device. These user guidelines are not tested.

Storage Temperature ................................ –65°C to + 150°C

Ambient Temperature with Power Applied. –55°C to + 125°C

Operating Range

Ambient

Supply Voltage on V Relative to GND .......–0.5V to + 2.9V

[15]

DDQ

Range

Com’l

Ind’l

Temperature

0°C to +70°C

–40°C to +85°C

Supply Voltage on V

Relative to GND..... –0.5V to + V

DDQ

1.8 ± 0.1V

1.4V to V

DC Applied to Outputs in High-Z .........–0.5V to V

+ 0.3V

DDQ

[11]

DC Input Voltage ...............................–0.5V to V + 0.3V

Electrical Characteristics

[12]

Over the Operating Range

DC Electrical Characteristics

Parameter

Description

Power Supply Voltage

IO Supply Voltage

Test Conditions

Min

1.7

1.4

Typ

Max

Unit

1.8

1.5

1.9

DDQ

Output HIGH Voltage

Output LOW Voltage

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage

Note 16

Note 17

/2 – 0.12

/2 + 0.12

DDQ

= –0.1 mA, Nominal Impedance

= 0.1 mA, Nominal Impedance

– 0.2

OH(LOW)

OL(LOW)

DDQ

0.2

+ 0.1

+ 0.15

REF

DDQ

–0.15

– 0.1

REF

Input Leakage Current

Output Leakage Current

Input Reference Voltage

GND ≤ V ≤ V

–2

μA

DDQ

GND ≤ V ≤ V

Output Disabled

DDQ,

[18]

Typical Value = 0.75V

0.68

0.75

0.95

1000

1080

1210

1280

290

REF

[19]

Operating Supply

= Max., I

= 0 mA, 300 MHz

333 MHz

OUT

CYC

f = f

= 1/t

MAX

375 MHz

400 MHz

Automatic Power Down

Current

Max. V

300 MHz

SB1

Both Ports Deselected,

333 MHz

375 MHz

400 MHz

300

≥ V or V ≤ V

f = f

= 1/t

320

MAX

CYC

Inputs Static

340

AC Input Requirements

[11]

Over the Operating Range

Parameter Description

Test Conditions

Min

Typ

–

Max

Unit

Input HIGH Voltage

Input LOW Voltage

+ 0.2

+ 0.24

DDQ

REF

–0.24

–

– 0.2

REF

Notes

15. Power up: assumes a linear ramp from 0V to V (min) within 200 ms. During this time V < V and V

< V .

DDQ

16. Outputs are impedance controlled. I = –(V

/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.

DDQ

17. Outputs are impedance controlled. I = (V

/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.

DDQ

18. V

(min) = 0.68V or 0.46V

, whichever is larger, V

(max) = 0.95V or 0.54V

, whichever is smaller.

DDQ

REF

DDQ

REF

19. The operation current is calculated with 50% read cycle and 50% write cycle.

Document Number: 001-06347 Rev. *D

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Capacitance^[20]

Parameter

Description

Test Conditions

T = 25°C, f = 1 MHz,

Max

Unit

Input Capacitance

= 1.8V

Clock Input Capacitance

Output Capacitance

CLK

= 1.5V

DDQ

Thermal Resistance^[20]

165 FBGA

Package

Parameter

Description

Test Conditions

Unit

Thermal Resistance

(Junction to Ambient)

Test conditions follow standard test methods and

procedures for measuring thermal impedance, per

EIA/JESD51.

16.25

°C/W

Thermal Resistance

(Junction to Case)

2.91

°C/W

AC Test Loads and Waveforms

Figure 4. AC Test Loads and Waveforms

V_REF= 0.75V

0.75V

V_REF

0.75V

R = 50Ω

OUTPUT

[21]

ALL INPUT PULSES

1.25V

Z = 50Ω

OUTPUT

Device

Under

Test

R = 50Ω

0.75V

Device

Under

0.25V

5 pF

V_REF= 0.75V

Slew Rate = 2 V/ns

Test

RQ =

250Ω

INCLUDING

JIG AND

SCOPE

(a)

(b)

Notes

20. Tested initially and after any design or process change that may affect these parameters.

21. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, V

= 0.75V, RQ = 250Ω, V

= 1.5V, input

REF

DDQ

pulse levels of 0.25V to 1.25V, and output loading of the specified I /I and load capacitance shown in (a) of AC T e st Loads and Waveforms.

OL OH

Document Number: 001-06347 Rev. *D

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Switching Characteristics

[21, 22]

Over the Operating Range

400 MHz

375 MHz

333 MHz

300 MHz

Cypress Consortium

Parameter Parameter

Description

(Typical) to the first Access

Unit

Min Max Min Max Min Max Min Max

[23]

–

POWER

CYC

K Clock Cycle Time

2.50 8.4 2.66 8.4 3.0 8.4 3.3 8.4

KHKH

KHKL

KLKH

KHKH

Input Clock (K/K) HIGH

Input Clock (K/K) LOW

0.4

–

0.4

–

0.4

–

0.4

–

CYC

K Clock Rise to K Clock Rise

(rising edge to rising edge)

1.06

1.13

1.28

1.40

KHKH

Setup Times

Address Setup to K Clock Rise

0.4

–

0.4

–

0.4

–

0.4

–

AVKH

IVKH

Control Setup to K Clock Rise (LD, R/W)

Double Data Rate Control Setup to Clock

0.28

SCDDR

(K, K) Rise (BWS , BWS , BWS , BWS )

D Setup to Clock (K/K) Rise

[X:0]

0.28

–

0.28

–

0.28

–

0.28

–

DVKH

Hold Times

0.4

–

0.4

–

0.4

–

0.4

–

Address Hold after K Clock Rise

KHAX

KHIX

Control Hold after K Clock Rise (LD, R/W)

Double Data Rate Control Hold after Clock

0.28

HCDDR

(K/K) Rise (BWS , BWS , BWS , BWS )

D Hold after Clock (K/K) Rise

[X:0]

0.28

–

0.28

–

0.28

–

0.28

–

KHDX

Output Times

K/K Clock Rise to Data Valid

–

0.45

–

0.45

–

0.45

–

0.45

–

CHQV

CHQX

Data Output Hold after K/K Clock Rise (Active –0.45

to Active)

–0.45

DOH

K/K Clock Rise to Echo Clock Valid

Echo Clock Hold after K/K Clock Rise

Echo Clock High to Data Valid

–

0.45

–

0.45

–

0.45

–

0.45

–

CCQO

CQOH

CQD

CHCQV

CHCQX

CQHQV

CQHQX

CQHCQL

CQHCQH

–0.45

–

–0.45

0.2

–

0.2

–

0.2

–

0.2

–

Echo Clock High to Data Invalid

–0.2

0.81

–0.2

0.88

–0.2

1.03

–0.2

1.15

CQDOH

CQH

[24]

Output Clock (CQ/CQ) HIGH

–

[24]

CQ Clock Rise to CQ Clock Rise

–

CQHCQH

(rising edge to rising edge)

Clock (K/K) Rise to High-Z

(Active to High-Z)

–

0.45

–

0.45

–

0.45

–

0.45

–

CHZ

CHQZ

[25, 26]

Clock (K/K) Rise to Low-Z

–0.45

CLZ

CHQX1

[27]

Echo Clock High to QVLD Valid

–0.20 0.20 –0.20 0.20 –0.20 0.20 –0.20 0.20

QVLD

CQHQVLD

DLL Timing

Clock Phase Jitter

DLL Lock Time (K)

–

0.20

–

0.20

–

0.20

–

0.20

–

KC Var

2048

Cycles

KC lock

KC Reset

KC lock

KC Reset

[28]

K Static to DLL Reset

–

Notes

22. When a part with a maximum frequency above 300 MHz is operating at a lower clock frequency, it requires the input timing of the frequency range in which it is being

operated and outputs data with the output timing of that frequency range.

23. This part has an internal voltage regulator; t

is the time that the power must be supplied above V minimum initially before a read or write operation is initiated.

POWER

24. These parameters are extrapolated from the input timing parameters (t

– 250 ps, where 250 ps is the internal jitter. An input jitter of 200 ps (t

) is already

KHKH

KC Var

included in the t

). These parameters are only guaranteed by design and are not tested in production.

KHKH

25. t

, t

, are specified with a load capacitance of 5 pF as in (b) of“AC T e st Loads and Waveforms” on page 21. Transition is measured ±100 mV from steady-state

CHZ CLZ

voltage.

26. At any voltage and temperature t

is less than t

and t

less than t

CHZ

CLZ

CHZ

27. t

spec is applicable for both rising and falling edges of QVLD signal.

QVLD

28. Hold to >V or <V

Document Number: 001-06347 Rev. *D

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CY7C1266V18, CY7C1277V18

CY7C1268V18, CY7C1270V18

Switching Waveforms

Read/Write/Deselect Sequence^{[29, 30]}

Figure 5. Waveform for 2.5 Cycle Read Latency

NOP

READ

NOP

WRITE

NOP

READ

NOP

KHKH

CYC

R/W

QVLD

SA HA

QVLD

D21 D30 D31

Q00 Q01 Q10 Q11

D20

Q40

DOH

CHZ

CLZ

CQD

(Read Latency = 2.5 Cycles)

CQDOH

CCQO

CQOH

CQH

CQHCQH

CCQO

CQOH

DON’T CARE

UNDEFINED

Notes

29. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.

30. Outputs are disabled (High-Z) one clock cycle after a NOP.

Document Number: 001-06347 Rev. *D

Page 23 of 27

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CY7C1266V18, CY7C1277V18

CY7C1268V18, CY7C1270V18

Ordering Information

Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit

www.cypress.com for actual products offered.

Speed

(MHz)

Package

Diagram

Operating

Range

Ordering Code

Package Type

400 CY7C1266V18-400BZC

CY7C1277V18-400BZC

CY7C1268V18-400BZC

CY7C1270V18-400BZC

CY7C1266V18-400BZXC

CY7C1277V18-400BZXC

CY7C1268V18-400BZXC

CY7C1270V18-400BZXC

CY7C1266V18-400BZI

CY7C1277V18-400BZI

CY7C1268V18-400BZI

CY7C1270V18-400BZI

CY7C1266V18-400BZXI

CY7C1277V18-400BZXI

CY7C1268V18-400BZXI

CY7C1270V18-400BZXI

375 CY7C1266V18-375BZC

CY7C1277V18-375BZC

CY7C1268V18-375BZC

CY7C1270V18-375BZC

CY7C1266V18-375BZXC

CY7C1277V18-375BZXC

CY7C1268V18-375BZXC

CY7C1270V18-375BZXC

CY7C1266V18-375BZI

CY7C1277V18-375BZI

CY7C1268V18-375BZI

CY7C1270V18-375BZI

CY7C1266V18-375BZXI

CY7C1277V18-375BZXI

CY7C1268V18-375BZXI

CY7C1270V18-375BZXI

51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)

51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free

51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)

51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free

51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)

51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free

51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)

51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free

Commercial

Industrial

Commercial

Industrial

Document Number: 001-06347 Rev. *D

Page 24 of 27

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CY7C1266V18, CY7C1277V18

CY7C1268V18, CY7C1270V18

Ordering Information (continued)

Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit

www.cypress.com for actual products offered.

Speed

(MHz)

Package

Diagram

Operating

Range

Ordering Code

Package Type

333 CY7C1266V18-333BZC

CY7C1277V18-333BZC

CY7C1268V18-333BZC

CY7C1270V18-333BZC

CY7C1266V18-333BZXC

CY7C1277V18-333BZXC

CY7C1268V18-333BZXC

CY7C1270V18-333BZXC

CY7C1266V18-333BZI

CY7C1277V18-333BZI

CY7C1268V18-333BZI

CY7C1270V18-333BZI

CY7C1266V18-333BZXI

CY7C1277V18-333BZXI

CY7C1268V18-333BZXI

CY7C1270V18-333BZXI

300 CY7C1266V18-300BZC

CY7C1277V18-300BZC

CY7C1268V18-300BZC

CY7C1270V18-300BZC

CY7C1266V18-300BZXC

CY7C1277V18-300BZXC

CY7C1268V18-300BZXC

CY7C1270V18-300BZXC

CY7C1266V18-300BZI

CY7C1277V18-300BZI

CY7C1268V18-300BZI

CY7C1270V18-300BZI

CY7C1266V18-300BZXI

CY7C1277V18-300BZXI

CY7C1268V18-300BZXI

CY7C1270V18-300BZXI