Samsung Ssd 256gb Sata MZMTD256HAGM00000 User Manual

PRODUCT SELECTION GUIDE

Displays, LEDs, Memory and Storage 2H 2013

Pages 4–12

DRAM

samsung.com/dram

• DDR4 SDRAM

• DDR3 SDRAM

• DDR2 SDRAM

• DDR SDRAM

• Mobile DRAM

• Graphics SDRAM

• DRAM Ordering

Information

Pages 13–17

ꢀASH - SSD

samsung.com/flash

• SLC Flash

• MLC Flash

• microSD Cards

• eMMC

• Solid State Drives (SSD)

• Flash Products Ordering

Information

• Industrial Cards

Page 18–19

MULTI-ChIP PACKAGES

samsung.com/mcp

• eMMC + LPDDR2

• eMMC + LPDDR3

• eMMC + MDDR

Pages 20–21

STORAGE

samsung.com/flash-ssd

• Solid State Drives

samsungodd.com

• Optical Disc Drives

Pages 22–24

DISPLAyS

samsungdisplay.com

• Tablets

• Exclusive Digital

Information Display (E-DID)

• Ultrabooks™/PCs

• Performance Digital

Information Display (P-DID)

• Monitors

• Basic Digital Information

Display (B-DID)

Pages 25–27

CONTACTS

samsung.com/us/oem-solutions

• Sales Representatives and Distributors

• To access our online sales portal, visit:

https://smarttools.ssi.samsung.com

samsung.com/dram

2H 2013

DDR4 SDRAM REGISTERED MODULES

Density Voltage Organization

Part Number

Composition

Compliance

Speed (Mbps)

Ranks Production

8GB

1.2V

1Gx 72

2Gx72

M393A1G40DB0-CPB

4Gb (1G x4) * 18

4Gb (1G x4) * 36

Lead Free & Halogen Free, Flip Chip

2133

3Q'13

16GB

Notes:

M393A2G40DB0-CPB

NA = DDR4-1866 (14-14-14)

Lead Free & Halogen Free, Flip Chip 2133

QB = DDR4-2133(16-16-16) PB = DDR4-2133(15-15-15)

DDR4 SDRAM LOAD REDUCED MODULES

Density Voltage Organization

Part Number

Composition

Compliance

Speed (Mbps)

Ranks Production

32GB

Notes:

1.2V

4Gx 72

M386A4GDM0-CPB

NA = DDR4-1866 (14-14-14)

4Gb MDP (2Gx4) * 36 Lead Free & Halogen Free

QB = DDR4-2133(16-16-16) PB = DDR4-2133(15-15-15)

2133

4Q'13

DDR3 SDRAM REGISTERED MODULES

Density Voltage Organization Part Number

Composition

Compliance

Speed (Mbps)

Ranks Production

1GB

1.5V

128Mx72

M393B2873GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8) * 9

M393B5673GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8) * 18

M393B5670GB0-C(F8/H9/K0/MA)(08/09) 1Gb (256M x4) * 18

M393B5773DH0-C(F8/H9/K0/MA)(08/09) 2Gb (256M x8) * 9

M393B5170GB0-C(F8/H9/K0/MA)(08/09) 1Gb (256M x4) * 36

M393B5273DH0-C(F8/H9/K0/MA)(08/09) 2Gb (256M x8) * 18

M393B5270DH0-C(F8/H9/K0/MA)(08/09) 2Gb (512M x4) * 18

Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866

Now

Q3'13

Now

Q3'13

Now

Q3'13

Now

Q3'13

Now

Q3'13

2GB

1.5V

256Mx72

Lead Free & Halogen Free

1066/1333/1600/1866

Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866

4GB

8GB

1.5V

512Mx72

1Gx72

Lead Free & Halogen Free

1066/1333/1600/1866

1066/1333

M393B1K73DH0-C(F8/H9)(08/09)

M393B1K70DH0-C(F8/H9/K0/MA)(08/09) 2Gb (512M x4) * 36

M393B1K70QB0-C(K0/MA) (08/09) 2Gb (512M x4) * 36

M393B1G70BH0-C(F8/H9/K0/MA)(08/09) 4Gb (1G x4) * 18

M393B1G70QH0-C(K0/MA) (08/09) 4Gb (1G x4) * 18

M393B1G73BH0-C(F8/H9/K0/MA)(08/09) 4Gb (512M x8) * 18

2Gb (256M x8) * 36

1066/1333/1600/1866

1600/1866

1066/1333

1600/1866

1066/1333/1600/1866

1600/1866

M393B1G70QB0-C(K0/MA) (08/09)

M393B2K70DM0-C(F8/H9)(08/09)

M393B2G70BH0-C(K0/MA)(08/09)

M393B2G70QB0-C(K0/MA)(08/09)

M393B2G70DB0-C(K0/MA)(02/03)

M393B4G70BM0-C(F8/H9)(08/09)

M393B5773DH0-Y(F8/H9/K0)(08/09)

M393B5173GB0-Y(F8/H9)(08/09)

M393B5170GB0-Y(F8/H9/K0)(08/09)

M393B5273DH0-Y(F8/H9/K0)(08/09)

M393B5270DH0-Y(F8/H9/K0)(08/09)

M393B1G70BH0-Y(F8/H9/K0)(08/09)

M393B1K70QB0-Y(H9/K0) (08/09)

M393B1G70QH0-Y(H9/K0) (08/09)

M393B1G73BH0-Y(F8/H9/K0)(08/09)

M393B2G70BH0-Y(F8/H9/K0)(08/09)

M393B2G70BH0-Y(H9/K0) (08/09)

M393B2G70QB0-Y(H9/K0) (08/09)

M393B2G70DB0-Y(H9/K0) (02/03)

M393B2G70QH0-Y(K0) (08/09)

4Gb (1G x4) * 36

2Gb DDP (1G x4) * 36

4Gb (1G x4) * 36

8Gb DDP (2G x4) * 36

2Gb (256M x4) * 9

1Gb (128M x8) * 36

1Gb (256M x4) * 36

2Gb (256M x8) * 18

2Gb (512M x4) * 18

4Gb (1G x4) * 18

1066/1333

1600/1866

16GB

1.5V

2Gx72

1600/1866

32GB

2GB

1.5V

4Gx72

1066/1333

1.35V

256Mx72

1066/1333/1600

Lead Free & Halogen Free, Flip Chip 1066/1333

Lead Free & Halogen Free, Flip Chip 1066/1333/1600

4GB

8GB

1.35V

512Mx72

1Gx72

Lead Free & Halogen Free

1066/1333/1600

1333/1600

2Gb (512M x4) * 36

4Gb (1G x4) * 18

1333/1600

4Gb (512M x8) * 18

4Gb (1G x4) * 36

1066/1333/1600

1600/1866

4Gb (1G x4) * 36

1600/1866

4Gb (1G x4) * 36

1600/1866

16GB

1.35V

2Gx72

4Gx72

4Gb (1G x4) * 36

1600/ 1866*

1066/1333

M393B2G73BH0-Y(F8/H9)(08/09)

M393B2G73BH0-C(F8/H9)(08/09)

M393B2K70DM0-Y(F8/H9)(08/09)

M393B4G70BM0-Y(F8/H9)(08/09)

M393B4G70DM0-YH9(02/03)

4Gb (512M x8) * 36

4Gb DDP (1G x4) * 36

8Gb DDP (2G x4) * 36

32GB

Notes:

1333

04 = IDT B0 register

05 = Inphi C0 register

08 = IDT A1

F8 = DDR3-1066 (7-7-7)

H9 = DDR3-1333 (9-9-9)

K0 = DDR3-1600 (11-11-11)

MA = DDR3-1866 (13-13-13)

09 = Inphi UV GS02

* K0 (1600Mbps) available in ES only

samsung.com/dram

DDR4 & DDR3 SDRAM

2H 2013

DDR3 SDRAM LOAD REDUCED REGISTERED MODULES

Density Voltage

Organization Part Number

Composition

Compliance

Speed (Mbps)

Ranks Production

16GB

1.35V

2Gx72

M386B2K70DM0-YH90

4Gb DDP (1G x4) * 36

Lead Free & Halogen Free

1333

Now

M386B4G70BM0-YK0(3/4)/

CMA(3/4)

8Gb DDP (2G x4) * 36

Lead Free & Halogen Free

1333/1600/1866

1600/1866

Now

32GB

1.35V/1.5V

4Gx72

M386B4G70DM0-YK0(3/4)/

CMA(3/4)

Q3'13

M386B8G70BO0-YH94/CK04 4Gb QDP (4G x4) * 36

M386B8G70DE0-YH9(4)/CK0(4) 16Gb QDP (4G x4) * 36

Lead Free & Halogen Free

1333/1600

Now

64GB

Notes

1.35V/1,5V

8Gx72

Q3'13

0 = Inphi iMB GS02A

3 = Inphi iMB GS02B

4 = Montage C1

DDR3 SDRAM VLP REGISTERED MODULES

Density Voltage Organization Part Number

Composition

Compliance

Speed (Mbps)

Ranks Production

Lead Free & Halogen Free,

Flip Chip

1GB

1.5V

128Mx72

1Gb (128M x8) * 9

1066/1333/1600/1866

Now

M392B2873GB0-C(F8/H9/K0/MA)(08/09)

M392B5673GB0-C(F8/H9/K0/MA)(08/09)

M392B5670GB0-C(F8/H9/K0/MA)(08/09)

Lead Free & Halogen Free,

Flip Chip

1Gb (128M x8) * 18

1Gb (256M x8) * 18

Lead Free & Halogen Free,

Flip Chip

2GB

1.5V

256Mx72

2Gb (256M x8) * 9

2Gb (256M x8) * 18

2Gb (512M x4) * 18

Lead Free & Halogen Free

1066/1333/1600/1866

1066/1333

Now

Q3'13

Now

Q3'13

Now

M392B5773DH0-C(F8/H9/K0/MA)(08/09)

M392B5273DH0-C(F8/H9/K0/MA)(08/09)

M392B5270DH0-C(F8/H9/K0/MA)(08/09)

M392B1K73DM0-C(F8/H9)(08/09)

M392B1K70DM0-C(F8/H9/K0/MA)(08/09)

M392B1G73BH0-C(F8/H9/K0/MA)(08/09)

M392B1G73DB0-CMA (08/09)

4GB

8GB

1.5V

512Mx72

1Gx72

2Gb DDP (512M x8) * 18 Lead Free & Halogen Free

2Gb DDP (1G x4) * 18

4Gb (512M x8) * 18

4Gb (1G x4) * 18

Lead Free & Halogen Free

1066/1333/1600/1866

1866

1066/1333/1600/1866

1600/1866

M392B1G70BH0-C(F8/H9/K0/MA)(08/09)

M392B2G70BM0-C(F8/H9/K0/MA)(08/09)

M392B2G70DM0-YK0/CMA (03/04)

M392B2G73BM0-C(F8/H9)(08/09)

M392B5773DH0-Y(F8/H9/K0)(08/09)

M392B5273DH0-Y(F8/H9/K0)(08/09)

M392B5270DH0-Y(F8/H9/K0)(08/09)

M392B1K73DM0-Y(F8/H9)(08/09)

M392B1K70DM0-Y(F8/H9/K0)(08/09)

M392B1G73BH0-Y(F8/H9/K0)(08/09)

M392B1G73DB0-YK0/CMA (03/04)

M392B1G70BH0-Y(F8/H9/K0)(08/09)

M392B2G70BM0-Y(F8/H9/K0)(08/09)

M392B2G70DM0-YK0 (03/04)

8Gb DDP (2G x4) * 18

4Gb DDP (1G x8) * 18

2Gb (256M x8) * 9

16GB

1.5V

2Gx72

1066/1333

2GB

4GB

1.35V

256Mx72

512Mx72

1066/1333/1600

1066/1333

2Gb (256M x8) * 18

2Gb (512M x4) * 18

4Gb DDP (512M x8) * 18

2Gb DDP (1G x4) * 18

4Gb (512M x8) * 18

4Gb (1G x4) * 18

1066/1333/1600

1600/1866

8GB

1.35V

1Gx72

1066/1333/1600

1600

8Gb DDP (2G x4) * 18

8Gb DDP (1G x8) * 18

4Gb QDP (4G x4) * 18

16GB

1.35V

2Gx72

4Gx72

32GB

Notes:

1066/1333

M392B4G70BE0-Y(F8/H9)(08)

04 = IDT B0 register

05 = Inphi C0 register

08 = IDT A1

F8 = DDR3-1066 (7-7-7)

H9 = DDR3-1333 (9-9-9)

K0 = DDR3-1600 (11-11-11)

MA = DDR3-1866 (13-13-13)

09 = Inphi UV GS02

samsung.com/dram

2H 2013

DDR3 SDRAM

DDR3 SDRAM UNBUFFERED MODULES

Density Voltage Organization Part Number

Composition

Compliance

Speed (Mbps)

Ranks Production

1GB

1.5V

128Mx64

M378B2873GB0-C(F8/H9/K0/MA) 1Gb (128M x8) * 8

M378B5673GB0-C(F8/H9/K0/MA) 1Gb (128M x8) * 16

M378B5773DH0-C(F8/H9/K0/MA) 2Gb (256M x8) * 8

Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866

Now

Lead Free & Halogen Free

1066/1333/1600/1866

1600/1866

Now

2GB

1.5V

256Mx64

M378B5773QB0-CK0/MA

M378B5273CH0-C(F8/H9)

2Gb (256M x8) * 8

2Gb (256M x8) * 16

Q4'13

Now

1066/1333

M378B5273DH0-C(F8/H9/K0/MA) 2Gb (256M x8) * 16

1066/1333/1600/1866

1600/1866

Now

4GB

8GB

1.5V

512Mx64

M378B5173QH0-C(K0/MA)

M378B5173DB0-C(K0/MA)

4Gb (512M x8) * 8

Q3'13

Now

1600/1866

M378B1G73BH0-C(F8/H9/K0/MA) 4Gb (512M x8) * 16

1066/1333/1600/1866

1600/1866

1024Mx64

M378B1G73QH0-C(K0/MA)

M378B1G73DB0-C(K0/MA)

4Gb (512M x8) * 16

Q3'13

Now

1600/1866

DDR3 SDRAM UNBUFFERED MODULES (with ECC)

Density Voltage Organization Part Number

Composition

Compliance

Speed (Mbps)

Ranks Production

Lead Free & Halogen Free,

Flip Chip

1.5V

128Mx72

1Gb (128M x8) * 9

1066/1333/1600/1866

Now

1GB

M391B2873GB0-C(F8/H9/K0/MA)

M391B5673GB0-C(F8/H9/K0/MA)

Lead Free & Halogen Free,Flip

Chip

1Gb (128M x8) * 18

1066/1333/1600/1866

2GB

1.5V

256Mx72

2Gb (256M x8) * 9

2Gb (256M x8) * 18

4Gb (512M x8) * 18

Lead Free & Halogen Free

1066/1333

Now

Q3'13

M391B5773CH0-C(F8/H9)

1066/1333/1600/1866

1066/1333

M391B5773DH0-C(F8/H9/K0/MA)

M391B5273CH0-C(F8/H9)

4GB

1.5V

512Mx72

1066/1333/1600/1866

1866

M391B5273DH0-C(F8/H9/K0/MA)

M391B1G73BH0-C(F8/H9/K0/MA)

M391B1G73QH0-C(MA)

8GB

1GB

1.5V

1024Mx72

128Mx72

Lead Free & Halogen Free,

Flip Chip

1.35V

1Gb (128M x8) * 9

1Gb (128M x8) * 18

1066/1333/1600

Now

M391B2873GB0-Y(F8/H9/K0)

M391B5673GB0-Y(F8/H9/K0)

Lead Free & Halogen Free,Flip

Chip

2GB

4GB

1.35V

256Mx72

2Gb (256M x8) * 9

2Gb (256M x8) * 18

4Gb (512M x8) * 9

4Gb (512M x8) * 18

Lead Free & Halogen Free

1066/1333

1066/1333/1600

1066/1333

1066/1333/1600

1600

Now

M391B5773CH0-Y(F8/H9)

M391B5773DH0-Y(F8/H9/K0)

M391B5273CH0-Y(F8/H9)

M391B5273DH0-Y(F8/H9/K0)

M391B5173QH0-YK0

Now

1.35V

512Mx72

Now

Q3'13

Now

1066/1333/1600

1600

M391B1G73BH0-Y(F8/H9/K0)

M391B1G73QH0-YK0

8GB

1024Mx72

Q3'13

Notes:

F8 = DDR3-1066 (7-7-7)

H9 = DDR3-1333 (9-9-9)

K0 = DDR3-1600 (11-11-11)

MA = DDR3-1866 (13-13-13)

samsung.com/dram

DDR3 SDRAM

2H 2013

DDR3 SDRAM SODIMM MODULES

Density

Voltage Organization Part Number

Composition

Compliance

Speed (Mbps)

Ranks Production

1GB

1.5V

128Mx64

256Mx64

M471B2873GB0-C(F8/H9/K0/MA) 1Gb (128M x8) * 8

M471B5673GB0-C(F8/H9/K0/MA) 1Gb (128M x8) * 16

M471B5773DH0-C(F8/H9/K0/MA) 2Gb (256M x8) * 8

M471B5273DH0-C(F8/H9/K0/MA) 2Gb (256M x8) * 16

M471B5173BH0-C(F8/H9/K0/MA) 4Gb (512M x8) * 8

M471B1G73BH0-C(F8/H9/K0/MA) 4Gb (512M x8) * 16

Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866

Now

Q4'13

Now

2GB

Lead Free & Halogen Free

1066/1333/1600/1866

4GB

1.5V

512Mx64

8GB

1GB

1.5V

1024Mx64

128Mx64

1.35V

M471B2873GB0-Y(F8/H9/K0)

M471B5673GB0-Y(F8/H9/K0)

M471B5773DH0-Y(F8/H9/K0)

M471B5674QH0-YK0

1Gb (128M x8) * 8

1Gb (128M x8) * 16

2Gb (256M x8) * 8

4Gb (256M x16) * 4

2Gb (256M x8) * 16

4Gb (512M x8) * 8

Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866

Lead Free & Halogen Free, Flip Chip 1066/1333/1600

Lead Free & Halogen Free

1066/1333/1600

1600

2GB

1.35V

256Mx64

512Mx64

1024Mx64

M471B5273DH0-Y(F8/H9/K0)

M471B5173BH0-Y(F8/H9/K0)

1066/1333/1600

4GB

M471B5173QH0-YK0

4Gb (512M x8) * 8

Lead Free & Halogen Free

1600

Q3'13

M471B5173DB0-YK0

M471B1G73BH0-Y(F8/H9/K0)

M471B1G73QH0-YK0

M471B1G73DB0-YK0

4Gb (512M x8) * 8

4Gb (512M x8) * 16

Lead Free & Halogen Free

1600

Q3'13

Now

1066/1333/1600

1600

8GB

Q3'13

1600

Notes:

F8 = DDR3-1066 (7-7-7)

H9 = DDR3-1333 (9-9-9)

K0 = DDR3-1600 (11-11-11)

MA = DDR3-1866 (13-13-13)

DDR3 SDRAM ECC SODIMM MODULES

Density

Organization

Part Number Composition

Compliance Speed (Mbps)

1333/1600

1600

Rank

Production

Now

2GB

1.35V

256Mx64

512Mx64

M474B5773DH0-YH9/K0

2Gb x8*9

2Gb x8*18

4Gb x8*9

4Gb x8*18

Lead Free & Halogen Free

M474B5273DH0-YH9/K0

M474B5173BH0-YH9/K0

M474B1G73BH0-YH9/K0

M474B1G73QH0-YK0

M474B1G73QH0-CMA

Lead Free & Halogen Free

Now

4GB

1.35V

Now

8GB

1.35V

1024Mx64

Q3'13

1866

Notes:

E6 = PC2-5300 (DDR2-667 @ CL=5)

F7 = PC2-6400 (DDR2-800 @ CL=6)

E7 = PC2-6400 (DDR2-800 @ CL=5)

samsung.com/dram

2H 2013

DDR3 SDRAM

DDR3 SDRAM COMPONENTS

Density Voltage Organization Part Number

# Pins-Package Compliance

Speed (Mbps)

Dimensions Production

Lead Free & Halogen Free,

256M x4

128M x8

128M x16

K4B1G0446G-BC(F8/H9/K0/MA)

K4B1G0846G-BC(F8/H9/K0/MA)

78 Ball -FBGA

1066/1333/1600/1866

7.5x11mm

Now

Flip Chip

Lead Free & Halogen Free,

1Gb

1.5V

1066/1333/1600/1866

Flip Chip

Lead Free & Halogen Free,

K4B1G1646G-BC(F8/H9/K0/MA/NB) 96 Ball -FBGA

1066/1333/1600/1866/2133 7.5x13.3mm Now

Flip Chip

K4B2G0446C-HC(F8/H9/K0)

K4B2G0446D-HC(F8/H9/K0/MA)

K4B2G0446Q-BC(K0/MA)

K4B2G0846C-HC(F8/H9/K0)

K4B2G0846D-HC(F8/H9/K0/MA)

K4B2G0846Q-BC(K0/MA)

K4B2G1646C-HC(F8/H9/K0/MA)

K4B2G1646E-BC(F8/H9/K0/MA)

K4B2G1646Q-B(K0/MA/NB)

K4B4G0446B-HC(F8/H9/K0/MA)

K4B4G0446Q-HC(K0/MA)

K4B4G0846B-HC(F8/H9/K0/MA)

K4B4G0846D-HC(K0/MA)

K4B4G0846Q-HC(K0/MA)

K4B4G1646B-HC(F8/H9/K0/MA)

K4B4G1646D-BC(K0/MA)

78 Ball -FBGA

96 Ball -FBGA

78 Ball -FBGA

96 Ball -FBGA

78 Ball -FBGA

Lead Free & Halogen Free 1066/1333/1600

7.5x11mm

Now

Lead Free & Halogen Free 1066/1333/1600/1866

512M x4

256M x8

Lead Free & Halogen Free,

Flip Chip

1600/1866

Lead Free & Halogen Free 1066/1333/1600

2Gb

1.5V

Lead Free & Halogen Free 1066/1333/1600/1866

Lead Free & Halogen Free,

Flip Chip

1600/1866

Lead Free & Halogen Free 1066/1333/1600/1866

Lead Free & Halogen Free 1600/1866/2133

Lead Free & Halogen Free 1066/1333/1600/1866

Lead Free & Halogen Free 1600/1866

7.5x13.3mm Now

7.5x13.3mm Q3'13

128M x16

1G x4

10x11mm

7.5x11mm

10x11mm

Now

Lead Free & Halogen Free 1066/1333/1600/1866

Lead Free & Halogen Free 1600/1866

4Gb

1.5V

512M x8

256Mx16

Lead Free & Halogen Free 1600/1866

Lead Free & Halogen Free 1333/1600/1866/2133

Lead Free & Halogen Free 1600/1866

10x13.3mm Now

7.5x13.3mm Q3'13

K4B1G0446F-HY(F8/H9/K0)

K4B1G0446G-BY(F8/H9/K0)

K4B1G0846F-HY(F8/H9/K0)

K4B1G0846G-BY(F8/H9/K0)

K4B2G0446C-HY(F8/H9/K0)

K4B2G0446D-HY(F8/H9/K0)

K4B2G0446Q-BY(K0)

Lead Free & Halogen Free 1066/1333/1600

Lead Free & Halogen Free,

1066/1333/1600

Flip Chip

Lead Free & Halogen Free 1066/1333/1600

Lead Free & Halogen Free,

1066/1333/1600

Flip Chip

7.5x11mm

10x11mm

7.5x11mm

10x11mm

7.5x11mm

10x11mm

Now

Q3'13

Now

1.35V 256M x4

1.35V 128M x8

1Gb

2Gb

Lead Free & Halogen Free 1066/1333/1600

512M x4

1.35V

Lead Free & Halogen Free,

Flip Chip

1600

K4B2G0846C-HY(F8/H9/K0)

K4B2G0846D-HY(F8/H9/K0)

K4B2G0846Q-BY(K0)

Lead Free & Halogen Free 1066/1333/1600

256M x8

Lead Free & Halogen Free,

Flip Chip

1600

K4B4G0446B-HY(F8/H9/K0)

K4B4G0446D-HY(K0)

78 Ball -FBGA

96 Ball -FBGA

Lead Free & Halogen Free 1066/1333/1600

1G x4

Lead Free & Halogen Free 1600

K4B4G0446Q-HY(K0)

Lead Free & Halogen Free 1600

K4B4G0846B-HY(F8/H9/K0/MA)

K4B4G0846D-BC(K0/MA)

K4B4G0846D-HY(K0)

Lead Free & Halogen Free 1066/1333/1600/1866

Lead Free & Halogen Free 1600/1866

Lead Free & Halogen Free 1600

4Gb

1.35V

512M x8

K4B4G0846Q-HY(K0)

Lead Free & Halogen Free 1600

K4B4G1646B-HY(K0/MA)

K4B4G1646D-BY(K0/MA)

Lead Free & Halogen Free 1333/1600/1866/2133

Lead Free & Halogen Free 1600/1866

10x13.3mm Now

7.5x13.3mm Q3'13

256Mx16

Notes:

F8 = DDR3-1066 (7-7-7) K0 = DDR3-1600 (11-11-11)

H9 = DDR3-1333 (9-9-9) MA = DDR3-1866 (13-13-13)

NB = DDR3-2133 (14-14-14)

DDR2 SDRAM COMPONENTS

Density Organization

Part Number

# Pins-Package Dimensions

Package

Speed (Mbps)

Production

256Mb

16Mx16

128M x4

64M x8

K4T56163QN-HC(E6/F7/E7/F8)

K4T51043QJ-HC(E6/F7/E7)

K4T51083QJ-HC(E6/F7/E7/F8)

K4T51163QJ-HC(E6/F7/E7/F8)

K4T1G044QF-BC(E6/F7/E7)

K4T1G084QF-BC(E6/F7/E7/F8)

K4T1G164QF-BC(E6/F7/E7/F8)

84-FBGA

60-FBGA

84-FBGA

60-FBGA

84-FBGA

7.5x12.5mm

7.5x9.5mm

7.5x12.5mm

7.5x9.5mm

7.5x12.5mm

Lead free & Halogen free

667/800/1066

667/800

Now

512Mb

667/800/1066

667/800

32M x16

256M x4

128M x8

64M x16

1Gb

667/800/1066

samsung.com/dram

DDR3, DDR2 & DDR SDRAM Components

2H 2013

DDR SDRAM COMPONENTS

Density

512Mb

Notes:

Organization

Part Number

# Pins - Package

66-TSOP

Speed (Mbps)

266/333

K4H510438J-LCB3/B0

K4H510438J-BCCC/B3

K4H510838J-LCCC/B3

K4H510838J-BCCC/B3

K4H511638J-LCCC/B3

A2 = DDR266 (133MHz @ Cl=2)

128Mx4

60-FBGA

333/400

66-TSOP

333/400

64Mx8

60-FBGA

333/400

32Mx16

66-TSOP

333/400

B0 = DDR266 (133MHz @ CL=2.5)

B3 = DDR333 (166MHz @ CL=2.5)

CC = DDR400 (200MHz @ CL=3)

MOBILE DRAM COMPONENTS

Density

Type

Organization

Part Number

Package

Power

1.8V

Production

Now

32Mx16

K4X51163PK-FGD8

K4X51323PK-8GD8

K4X2G323PD-8GD8

K4X4G303PD-AGD8

K4P2G324ED-AGC1

K4P4G324EQ-AGC2

K4P4G324EQ-FGC2

K4P8G304EQ-AGC2

K4P8G304EQ-PGC2

K3PE7E70QM-BGC2

K3PE7E70QM-CGC2

K3PE0E00QM-BGC2

K3PE0E00QM-CGC2

K4E4E324ED-EGCE

K4E8E304ED-EGCE

K3QF1F10DM-AGCE

K3QF1F10DA-QGCE

K4E6E304ED-EGCE

K3QF2F20DM-AGCE

K3QF2F20DM-FGCE

K3QF2F20DA-QGCE

60-FBGA, 200MHz

90-FBGA, 200MHz

512Mb

16Mx32

1.8V

Now

MDDR

2Gb

4Gb

2Gb

64Mx32

1.8V

Now

x32 (2CS, 2CKE)

1CH x32

2CH x32

1CH x32

2CH x32

1CH x32

2CH x32

168-FBGA, 12x12 PoP, DDP, 200MHz

168-FBGA, 12x12 PoP, MONO, 800Mbps

168-FBGA, 12x12 PoP, MONO, 1066Mbps

134-FBGA, 11x11.5 , MONO, 1066Mbps

168-FBGA, 12x12 PoP, DDP, 1066Mbps

216-FBGA, 12x12 PoP, DDP, 1066Mbps

220-FBGA, 14x14 PoP, DDP, 1066Mbps

216-FBGA, 12x12 PoP, QDP, 1066Mbps

220-FBGA, 14x14 PoP, QDP, 1066Mbps

178-FBGA, 11x11.5, MONO , 1600Mbps

178-FBGA, 11x11.5, DDP, 1600Mbps

253-FBGA, 11x11.5, DDP, 1600Mbps

216-FBGA, 15x15 PoP, DDP, 1600Mbps

178-FBGA, 11x11.5, QDP, 1600Mbps

253-FBGA, 11x11.5, QDP, 1600Mbps

256-FBGA, 14x14 PoP, QDP, 1600Mbps

216-FBGA, 15x15 PoP, QDP, 1600Mbps

1.8V

Now

1.8V/1.2V/1.2V Now

1.8V/1.2V/1.2V CS

1.8V/1.2V/1.2V Now

1.8V/1.2V/1.2V CS

1.8V/1.2V/1.2V Now

4Gb

LPDDR2

8Gb

16Gb

4Gb

8Gb

LPDDR3

16Gb

GRAPHICS DRAM COMPONENTS

Type

Density

Organization Part Number

Package

VDD/VDDQ

Speed Bin (MHz)

Production

128Mx32

64Mx32

32Mx32

K4G41325FC-HC(04/03/28)

170-FCFBGA

170-FBGA

170-FCFBGA

136-FBGA

96-FCFBGA

96-FBGA

1.5V/1.5V

5000/6000/7000

4000/5000

Now

4Gb

K4G41325FC-HC(04/03)

K4G20325FD-FC(04/03/28)

K4G20325FD-FC(04/03)

K4G10325FG-HC(03)

1.35V/1.35V

1.5V/1.5V

5000/6000/7000

4000/5000

2Gb

GDDR5

GDDR3

1.35V/1.35V

1.6V/1.6V

6000

1Gb

K4G10325FG-HC(05/04)

K4G10325FG-HC(04/03)

K4J10324KG-HC(14/1A)

K4W4G1646D-BC(12/11/1A)

K4W4G1646D-BC(1A)

1.5V/1.5V

4000/5000

1.35V/1.35V

1.8V/1.8V

4000/5000

32Mx32

1400/2000

1.5V/1.5V

1600/1866/2133

1866

1.35V/1.35V

1.5V/1.5V

4Gb

2Gb

256Mx16

K4W4G1646D-BY(12)

1600

K4W4G1646B-HC(12/11/1A)

K4W2G1646Q-BC(12/11/1A)

K4W2G1646Q-BC(1A)

1600/1866/2133

1866

Now

gDDR3

Notes:

96-FCFBGA

96-FBGA

1.5V/1.5V

1.35V/1.35V

1.5V/1.5V

128Mx16

64Mx16

K4W2G1646Q-BY(12)

1600

K4W2G1646E-BC(15/12/11/1A)

K4W1G1646G-BC(15/12/11/1A)

1333/1600/1866/2133

Now

1Gb

96-FBGA

1.5V/1.5V

Package

(1) Speeds (clock cycle - speed bin)

H: FBGA (Halogen Free & Lead Free) (DDR3)

B: FCFBGA (Halogen Free & Lead Free) (DDR3)

H: FCFBGA (Halogen Free & Lead Free) (GDDR5)

F: FBGA (Halogen Free & Lead Free) (GDDR5)

28: 0.28ns (7000Mbps)

03: 0.3ns (6000Mbps)

04: 0.4ns (5000Mbps)

05: 0.5ns (4000Mbps)

1A: 1.0ns (2000Mbps GDDR3)

14: 1.4ns (1400Mbps GDDR3)

1A: 1.0ns (2133Mbps gDDR3)

11: 1.1ns (1866Mbps)

12: 1.25ns (1600Mbps)

samsung.com/dram

2H 2013

Mobile & Graphics DRAM Components

COMPONENT DRAM ORDERING INFORMATION

SAMSUNG Memory

DRAM

Speed

Temp & Power

Package Type

DRAM Type

Density

Generation

Interface (VDD, VDDQ)

Bit Organization

Number of Internal Banks

08: x8

1. Memory (K)

2. DRAM: 4

9. Package Type

15: x16 (2CS)

16: x16

DDR2 DRAM

L: TSOP II (Lead-free & Halogen-free)

H: FBGA (Lead-free & Halogen-free)

F: FBGA for 64Mb DDR (Lead-free & Halogen-free)

6: sTSOP II (Lead-free & Halogen-free)

T: TSOP II

26: x4 Stack (JEDEC Standard)

27: x8 Stack (JEDEC Standard)

30: x32 (2CS, 2CKE)

31: x32 (2CS)

3. DRAM Type

B: DDR3 SDRAM

D: GDDR SDRAM

G: GDDR5 SDRAM

H: DDR SDRAM

J: GDDR3 SDRAM

M: Mobile SDRAM

N: SDDR2 SDRAM

S: SDRAM

32: x32

N: sTSOP II

6. # of Internal Banks

G: FBGA

U: TSOP II (Lead-free)

2: 2 Banks

3: 4 Banks

4: 8 Banks

5: 16 Banks

V: sTSOP II (Lead-free)

Z: FBGA (Lead-free)

DDR2 SDRAM

T: DDR SDRAM

Z: FBGA (Lead-free)

U: GDDR4 SDRAM

7. Interface ( VDD, VDDQ)

J: FBGA DDP (Lead-free)

V: Mobile DDR SDRAM Power Efficient Address

W: SDDR3 SDRAM

2: LVTTL, 3.3V, 3.3V

4: LVTTL, 2.5V, 2.5V

5: SSTL-2 1.8V, 1.8V

6: SSTL-15 1.5V, 1.5V

8: SSTL-2, 2.5V, 2.5V

A: SSTL, 2.5V, 1.8V

F: POD-15 (1.5V,1.5V)

H: SSTL_2 DLL, 3.3V, 2.5V

M: LVTTL, 1.8V, 1.5V

N: LVTTL, 1.5V, 1.5V

P: LVTTL, 1.8V, 1.8V

Q: SSTL-2 1.8V, 1.8V

R: SSTL-2, 2.8V, 2.8V

U: DRSL, 1.8V, 1.2V

Q: FBGA QDP (Lead-free)

H: FBGA (Lead-free & Halogen-free)

M: FBGA DDP (Lead-free & Halogen-free)

E: FBGA QDP (Lead-free & Halogen-free)

T: FBGA DSP (Lead-free & Halogen-free, Thin)

X: Mobile DDR SDRAM

Y: XDR DRAM

Z: Value Added DRAM

4. Density

DDR3 SDRAM

10: 1G, 8K/32ms

Z: FBGA (Lead-free)

16: 16M, 4K/64ms

26: 128M, 4K/32ms

28: 128M, 4K/64ms

32: 32M, 2K/32ms

50: 512M, 32K/16ms

51: 512M, 8K/64ms

52: 512M, 8K/32ms

54: 256M, 16K/16ms

55: 256M, 4K/32ms

56: 256M, 8K/64ms

62: 64M, 2K/16ms

64: 64M, 4K/64ms

68: 768M, 8K/64ms

1G: 1G, 8K/64ms

H: FBGA (Halogen-free & Lead-free)

Graphics Memory

Q: TQFP

U: TQFP (Lead Free)

G: 84/144 FBGA

V: 144 FBGA (Lead Free)

Z: 84 FBGA (Lead Free)

T: TSOP

8. Generation

A: 2nd Generation

B: 3rd Generation

C: 4th Generation

D: 5th Generation

E: 6th Generation

F: 7th Generation

G: 8th Generation

H: 9th Generation

I: 10th Generation

J: 11th Generation

K: 12th Generation

M: 1st Generation

N: 14th Generation

Q: 17th Generation

L: TSOP (Lead Free)

A: 136 FBGA

B: 136 FBGA (Lead Free)

H: FBGA (Hologen Free & Lead Free)

E: 100 FBGA (Hologen Free & Lead Free)

2G: 2G, 8K/64ms

SDRAM

4G: 4G, 8K/64ms

L TSOP II (Lead-free & Halogen-free)

N: STSOP II

5. Bit Organization

T: TSOP II

02: x2

U: TSOP II (Lead-free)

V: sTSOP II (Lead-free)

04: x4

06: x4 Stack (Flexframe)

07: x8 Stack (Flexframe)

samsung.com/dram

DRAM Ordering Information

2H 2013

COMPONENT DRAM ORDERING INFORMATION

SAMSUNG Memory

DRAM

Speed

Temp & Power

Package Type

DRAM Type

Density

Generation

Interface (VDD, VDDQ)

Bit Organization

Number of Internal Banks

XDR DRAM

DDR2 SDRAM

09: 0.9ns (1100MHz)

45: 4.5ns (222MHz)

1 : 1.0ns (1000MHz)

50/5A: 5.0ns (200MHz)

1 : 1.1ns (900MHz)

55: 5.5ns (183MHz)

12: 1.25ns (800MHz)

60: 6.0ns (166MHz)

14: 1.4ns (700MHz)

16: 1.6ns (600MHz)

J: BOC(LF) P: BOC

CC: DDR2-400 (200MHz @ CL=3, tRCD=3,

tRP=3)

Mobile DRAM

D5: DDR2-533 (266MHz @ CL=4, tRCD=4,

Leaded/Lead Free

tRP=4)

G/A: 52balls FBGA Mono

R/B: 54balls FBGA Mono

X/Z: 54balls BOC Mono

E6: DDR2-667 (333MHz @ CL=5, tRCD=5,

tRP=5)

F7: DDR2-800 (400MHz @ CL=6, tRCD=6,

J/V: 60(72)balls FBGA Mono 0.5pitch

L /F: 60balls FBGA Mono 0.8pitch

S/D: 90balls FBGA

tRP=6)

E7: DDR2-800 (400MHz @ CL=5, tRCD=5,

tRP=5)

Monolithic (11mm x 13mm)

F/H: Smaller 90balls FBGA Mono

Y/P: 54balls CSP DDP

SDRAM (Default CL=3)

50: 5.0ns (200MHz CL=3)

60: 6.0ns (166MHz CL=3)

67: 6.7ns

DDR3 SDRAM

F7: DDR3-800 (400MHz @ CL=6, tRCD=6,

M/E: 90balls FBGA DDP

tRP=6)

F8: DDR3-1066 (533MHz @ CL=7, tRCD=7,

75: 7.5ns PC133 (133MHz CL=3)

10. Temp & Power - COMMON

(Temp, Power)

tRP=7)

XDR DRAM

G8: DDR3-1066 (533MHz @ CL=8, tRCD=8,

A2: 2.4Gbps, 36ns, 16Cycles

B3: 3.2Gbps, 35ns, 20Cycles

C3: 3.2Gbps, 35ns, 24Cycles

C4: 4.0Gbps, 28ns, 24Cycles

DS: Daisychain Sample

C: Commercial, Normal (0’C – 95’C) & Normal

Power

tRP=8)

H9: DDR3-1333 (667MHz @ CL=9, tRCD=9,

tRP=9)

C: (Mobile Only) Commercial (-25 ~ 70’C), Normal

Power

K0: DDR3-1600 (800MHz @ CL=11, tRCD=11,

J: Commercial, Medium

tRP=11)

Mobile-SDRAM

60: 166MHz, CL 3

75: 133MHz, CL 3

80: 125MHz, CL 3

1H: 105MHz, CL 2

1L: 105MHz, CL 3

15: 66MHz, CL 2 & 3

L: Commercial, Low (0’C – 95’C) & Low Power

L: (Mobile Only) Commercial, Low, i-TCSR

F: Commercial, Low, i-TCSR & PASR & DS

E: Extended (-25~85’C), Normal

N: Extended, Low, i-TCSR

MA: DDR3-1866 (933MHz @ CL=13, tRCD=13,

tRP=13)

NB: DDR3-2133 (1067MHz @ CL=14, tRCD=14,

tRP=14)

Graphics Memory

18: 1.8ns (550MHz)

04: 0.4ns (2500MHz)

20: 2.0ns (500MHz)

05: 0.5ns (2000MHz)

22: 2.2ns (450MHz)

5C: 0.56ns (1800MHz)

25: 2.5ns (400MHz)

06: 0.62ns (1600MHz)

2C: 2.66ns (375MHz)

6A: 0.66ns (1500MHz)

2A: 2.86ns (350MHz)

07: 0.71ns (1400MHz)

33: 3.3ns (300MHz)

7A: 0.77ns (1300MHz)

36: 3.6ns (275MHz)

08: 0.8ns (1200MHz)

40: 4.0ns (250MHz)

G: Extended, Low, i-TCSR & PASR & DS

I: Industrial, Normal (-40’C – 85’C) & Normal

Power

Mobile-DDR

P: Industrial, Low (-40’C – 85’C) & Low Power

H: Industrial, Low, i-TCSR & PASR & DS

C3: 133MHz, CL 3

C2: 100MHz, CL 3

C0: 66MHz, CL 3

11. Speed (Wafer/Chip Biz/BGD: 00)

Note: All Lead-free and Halogen-free products are in

compliance with RoHS

DDR SDRAM

CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)

B3: DDR333 (166MHz @ CL=2.5, tRCD=3,

tRP=3) *1

A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3)

B0: DDR266 (133MHz @ CL=2.5, tRCD=3,

tRP=3)

Note 1: "B3" has compatibility with "A2" and "B0"

samsung.com/dram

2H 2013

DRAM Ordering Information

MODULE DRAM ORDERING INFORMATION

SAMSUNG Memory

AMB Vendor

Speed

DIMM

Data bits

Temp & Power

PCB Revision

Package

DRAM Component Type

Depth

Number of Banks

Bit Organization

Generation

1. Memory Module: M

2. DIMM Type

5. Depth

9. Package

09: 8M (for 128Mb/512Mb)

17: 16M (for 128Mb/512Mb)

16: 16M

E: FBGA QDP (Lead-free & Halogen-free)

G: FBGA

3: DIMM

H: FBGA (Lead-free & Halogen-free)

J: FBGA DDP (Lead-free)

M: FBGA DDP (Lead-free & Halogen-free)

N: sTSOP

4: SODIMM

28: 128M

29: 128M (for 128Mb/512Mb)

32: 32M

3. Data bits

12: x72 184pin Low Profile Registered DIMM

63: x63 PC100/PC133 μSODIMM with SPD for

144pin

33: 32M (for 128Mb/512Mb)

51: 512M

Q: FBGA QDP (Lead-free)

T: TSOP II (400mil)

52: 512M (for 512Mb/2Gb)

56: 256M

U: TSOP II (Lead-Free)

64: x64 PC100/PC133 SODIMM with SPD for

144pin (Intel/JEDEC)

V: sTSOP II (Lead-Free)

Z: FBGA (Lead-free)

57: 256M (for 512Mb/2Gb)

59: 256M (for 128Mb/512Mb)

64: 64M

66: x64 Unbuffered DIMM with SPD for

144pin/168pin (Intel/JEDEC)

10. PCB Revision

68: x64 184pin Unbuffered DIMM

70: x64 200pin Unbuffered SODIMM

71: x64 204pin Unbuffered SODIMM

74: x72/ECC Unbuffered DIMM with SPD for 168pin

(Intel/JEDEC)

0: Mother PCB

1: 1st Rev

65: 64M (for 128Mb/512Mb)

1G: 1G

2: 2nd Rev.

1K: 1G (for 2Gb)

3: 3rd Rev.

6. # of Banks in Comp. & Interface

4: 4th Rev.

77: x72/ECC PLL + Register DIMM with SPD for

168pin (Intel PC100)

1: 4K/64mxRef., 4Banks & SSTL-2

2 : 8K/64ms Ref., 4Banks & SSTL-2

2: 4K/64ms Ref., 4Banks & LVTTL (SDR Only)

5: 8K/64ms Ref., 4Banks & LVTTL (SDR Only)

5: 4Banks & SSTL-1.8V

A: Parity DIMM

S: Reduced PCB

U: Low Profile DIMM

78: x64 240pin Unbuffered DIMM

81: x72 184pin ECC unbuffered DIMM

83: x72 184pin Registered DIMM

90: x72/ECC PLL + Register DIMM

91: x72 240pin ECC unbuffered DIMM

92: x72 240pin VLP Registered DIMM

93: x72 240pin Registered DIMM

95: x72 240pin Fully Buffered DIMM with SPD for

168pin (JEDEC PC133)

11. Temp & Power

C: Commercial Temp. (0°C ~ 95°C) & Normal

Power

6: 8Banks & SSTL-1.8V

7. Bit Organization

L: Commercial Temp. (0°C ~ 95°C) & Low Power

0: x 4

12. Speed

3: x 8

CC: (200MHz @ CL=3, tRCD=3, tRP=3)

D5: (266MHz @ CL=4, tRCD=4, tRP=4)

E6: (333MHz @ CL=5, tRCD=5, tRP=5)

F7: (400MHz @ CL=6, tRCD=6, tRP=6)

E7: (400MHz @ CL=5, tRCD=5, tRP=5)

F8: (533MHz @ CL=7, tRCD=7, tRP=7)

G8: (533MHz @ CL=8, tRCD=8, tRP=8)

H9: (667MHz @ CL=9, tRCD=9, tRP=9)

K0: (800MHz @ CL=10, tRCD=10, tRP=10)

7A: (133MHz CL=3/PC100 CL2)

4: x16

6: x 4 Stack (JEDEC Standard)

7: x 8 Stack (JEDEC Standard)

8: x 4 Stack

4. DRAM Component Type

B: DDR3 SDRAM (1.5V VDD)

L: DDR SDRAM (2.5V VDD)

S: SDRAM

9: x 8 Stack

8. Generation

T: DDR2 SDRAM (1.8V VDD)

A: 2nd Gen.

B: 3rd Gen.

C: 4th Gen.

D: 5th Gen.

E: 6th Gen.

F: 7th Gen.

G: 8th Gen.

M: 1st Gen.

Q: 17th Gen.

13. AMB Vendor for FBDIMM

0, 5: Intel

1, 6, 8: IDT

9: Montage

Note: All Lead-free and Halogen-free products are in

compliance with RoHS

samsung.com/dram

DRAM Ordering Information

2H 2013

SLC FLASH

Density

Technology

Part Number

Package Type

Org.

Vol(V)

Status

K9WAG08U1E-SCB0*

K9WAG08U1E-SIB0*

K9K8G08U0E-SCB0*

K9K8G08U0E-SIB0*

K9F4G08U0E-SCB0*

K9F4G08U0E-SIB0*

K9F1G08U0E-SCB0*

K9F1G08U0E-SIB0*

K9F1G08U0E-BCB0*

K9F1G08U0E-BIB0*

K9WAG08U1D-SCB0*

K9WAG08U1D-SIB0*

K9K8G08U0D-SCB0*

K9K8G08U0D-SIB0*

K9F4G08U0D-SCB0*

K9F4G08U0D-SIB0*

K9F2G08U0C-SCB0*

K9F2G08U0C-SIB0*

K9F1G08U0D-SCB0*

K9F1G08U0D-SIB0*

TSOP1-LF/HF

3.3

Sampling now

CS Sept'13

16Gb QDP

8Gb DDP

4Gb

21nm SDR

TSOP1-LF/HF, i-temp

TSOP1-LF/HF

21nm SDR

TSOP1-LF/HF, i-temp

TSOP1 LF/HF

TSOP1 LF/HF, i-temp

TSOP1-LF/HF

TSOP1-LF/HF, i-temp

FBGA-LF/HF

CS Sept'13

1Gb

21nm SDR

CS Sept'13

FBGA-LF/HF, i-temp

TSOP1

CS Sept'13

16Gb QDP

8Gb DDP

4Gb

42nm SDR

TSOP1

TSOP-LF/HF

TSOP-LF/HF, i-temp

TSOP1 HF & LF

TSOP1 HF & LF, i-temp

TSOP-LF/HF

42nm SLC EOL Notice:

Last-time buy: Dec 2013

Last-time ship: Mar 2014

2Gb

TSOP-LF/HF, i-temp

TSOP-LF/HF

1Gb

TSOP-LF/HF, i-temp

Please contact your local Samsung sales representative for latest product offerings.

Note: All parts are lead free

MLC FLASH

Type

Density

Technology

21nm DDR

21nm SDR

21nm DDR

Part Number

Package Type

Org.

Vol(V)

3.3/1.8

3.3

Status

512Gb ODP

256Gb QDP

128Gb DDP

64Gb mono

K9PHGY8S5A-HCK0000

K9HFGY8S5A-HCK0000

K9LDGY8S1A-HCK0000

K9GCGY8S0A-HCK0000

K9GBG08U0B-SCB0000

K9GBGY8U0B-HCK0000

K9CFGD8U1A-SCB0000

K9BDGD8U0A-SCB0000

K9ACGD8U0A-SCB0000

K9ABGD8U0C-SCB0000

132BGA

48TSOP

132BGA

48TSOP

21nm 2bit MLC EOL Notice:

Last-time buy: Nov 2013

Last-time ship: Feb 2014

2bit

32Gb mono

3.3/1.8

3.3

256Gb QDP

128Gb DDP

64Gb mono

32Gb mono

21nm 3bit MLC EOL Notice:

Last-time buy: Nov 2013

Last-time ship: Feb 2014

3.3

3bit

3.3

Please contact your local Samsung sales representative for latest product offerings.

Note: All parts are lead-free & halogen-free

INDUSTRIAL CARDS

Density

Part Number

Sequential Reads

Sequential Writes

8GB

MMCAF08G3ACA-QMWCV

24 MB/s

16MB/s

16GB

MMCAF16GWACA-QMWCV

21MB/s

Please contact your local Samsung sales representative for part numbers and latest product offerings.

samsung.com/flash

2H 2013

SLC and MLC Flash, Industrial Cards

microSD FLASH CARDS

Application Density

Part Number

Class

CL4

Ultra High Speed (UHS)

2GB

4GB

MMAUR02G3ACA-QNJ00

MMBTR04G3CCA-QNJ00

MMCTR08G3ACH-QNJ00

MMCTR16GUACJ-SAC00

MMCTR32GUACJ-SAC00

MMCTR64GUACJ-SAC00

CL4

UHS 104

8GB

uSD Cards

CL4

16GB

CL10

32GB

64GB

Please contact your local Samsung sales representative for part numbers and latest product offerings.

microSD Card Key Features

•

Durable and high-performance data storage for your secure digital (SD)-enabled handset and tablet designs

Fastest performing, sturdiest and most dependable memory cards on the market today

10nm-class leading-edge NAND chips, advanced controller designs and state-of-the-art ﬁrmware

4GB 64GB capacities, UHS-104, Class 6/10

A variety of storage capacities to ﬁt all usage needs

Usage

4GB

8GB

16GB

32GB

64GB

Photo*

750 photos

1,500 photos

3,000 photos

6,000 photos

12,000 photos

Video**

30 mins

60 mins

120 mins

240 mins

480 mins

Music***

940 songs

1,880 songs

3,760 songs

7,520 songs

15,040 songs

**Photo: 20 Megapixels (5472x2448) **Video: H264@1080p ***Music: 3.5 minute MP3 song

High Capacities

With Samsung’s full lineup of microSD cards, you can capture more photos and

videos, and download more media ﬁles and apps to your mobile device without

worrying about speed or capacity.

Extreme Performance

All of Samsung’s microSD cards feature the highest quality NAND and are

available with UHS-I support, oﬀering Samsung’s fastest speeds at up to 80MB/s

Read and 20MB/s Write—ideal for use in high-end smart phones and tablet PCs.

samsung.com/flash

microSD Flash Cards

2H 2013

MAINSTREAM eMMC

Seq R/W

Perf (MB/s)

Random

R/W IOPS

Package Size

(mm)

Density

Flash

MMC*

Class

Part Number

C/S

4GB

32Gb*1

64Gb*1

64Gb*2

64Gb*4

64Gb*8

5.0

200

KLM4G1YEMD-C031

KLM8G1WEMB-B031

KLMAG2WEMB-B031

KLMBG4WEMC-B031

KLMCG8WEMC-B031

100/6

2500/200

4000/500

4000/1500

11.5x13x0.8

11.5x13x1.0

Oct

Sep

Oct

Sep

Oct

8GB

200

100/6

16GB

32GB

64GB

700

170/11

200/50

1500

*MMC5.0 is backwards compatible with 4.5 & 4.41

eMMC PRO (HIGH PERFORMANCE)

Seq R/W

Perf (MB/s)

Random

R/W IOPS

Package Size

(mm)

Density

Flash

MMC*

Class

Part Number

C/S

4GB

32Gb*1

64Gb*1

64Gb*2

64Gb*4

5.0

700

KLM4G1FEAC-B031

KLMAG2GEAC-B031

KLMBG4GEAC-B031

150/10

180/20

240/40

240/60

4000/700

6000/2500

11x10x0.8

Now

8GB

700

11.5x13x1.0

16GB

32GB

2000

64GB

64Gb*8

5.0

4.5

2000

KLMCG8GEAC-B031

KLMDGAGEAC-B001

240/60

150/50

6000/2500

4000/2000

11.5x13x1.2

11.5x13x1.4

Now

128GB

64Gb*16

*MMC5.0 is backwards compatible with 4.5 & 4.41

eMMC Key Features

Performance Specs

32GB, 64GB

•

Industry’s fastest eMMC

Fully-managed NAND

eMMC 4.5

200MB/s

3500/2000 IOPS

150/50 MB/s

eMMC 5.0

400MB/s

7000/2500 IOPS

250/60 MB/s

Interface Speed

Random R/W

Sequential R/W

Low active & standby power

High density in small form factor

(11.5x13mm pkg)

* Device performance condition: x8 Bus, Cache-On mode, without host overhead.

•

4GB to 128GB capacities

Applications

JEDEC standard MMC 4.51/5.0

Leading edge 10nm-class NAND Flash

Advanced controller & ﬁrmware design

eMMC is the ideal flash solution for tablets and smartphones, as well

as applications from eReaders, HD cameras and smart TVs to PNDs,

multi-media players and gaming devices.

Industry-Leading Smartphone and Tablet Design

Specifications

Simple Block Diagram

•

Density: 4GB to 128GB

Class: 200/700/1500/2000*

Flash: 32Gb/64Gb

uSD

Slot

AP +

DRAM

(POP)

LTE

Modem

Package Type: FBGA

Samsung

eMMC

Package Size: 11x10mm, 11.5x13mm

eMMC: 4.5/5.0

* Class = Random Write IOPS

samsung.com/flash

2H 2013

Mainstream eMMC and eMMC-PRO

SOLID STATE DRIVES (SSD)

Power-loss

Protection

Drive Type Drive Name Interface

Form Factor

Connector

Component

Density

Part Number

Status

128GB

256GB

512GB

128GB

256GB

512GB

128GB

256GB

512GB

120GB

240GB

480GB

120GB

240GB

480GB

120GB

240GB

480GB

960GB

100GB

200GB

400GB

800GB

MZMTD128HAFV-00000

MZMTD256HAGM-00000

MZMTD512HAGL-00000

MZMPD128HAFV-00000

MZMPD256HAGM-00000

MZMPD512HAGL-00000

MZHPU128HCGM-00000

MZHPU256HCGL-00000

MZHPU512HCGL-00000

MZ7TD120HAFV-000DA

MZ7TD240HAFV-000DA

MZ7TD480HAGM-000DA

MZ7PD120HAFV-000DA

MZ7PD240HAFV-000DA

MZ7PD480HAGM-000DA

MZ7WD120HCFV-00003

MZ7WD240HCFV-00003

MZ7WD480HCGM-00003

MZ7WD960HCGP-00003

MZ6ER100HAFV-00003

MZ6ER200HAGM-00003

MZ6ER400HAGL-00003

MZ6ER800HAGL-00003

EOL

PM841

SM841

XP941

PM843

SM843

SATA III - 6Gb/s

PCIe - SATAe

mSATA MO-300

Mini PCI-E

3-bit MLC

EOL

Client PC/

Embedded

mSATA MO-300

M.2 (22x80mm)

2.5" 7mmT

Mini PCI-E

M.2

2-bit MLC

3-bit MLC

2-bit MLC

EOL

SATA III - 6Gb/s

SF-8223

EOL

2.5" 7mmT

EOL

Data

Center

EOL

MP Q4

EOL

SM843T

SM1625

SATA III - 6Gb/s

2.5" 7mmT

SF-8223

2-bit MLC

Yes

EOL

Storage

Enclosure

SAS Gen 2.0 - 6Gb/s 2.5" 15mmT

SFF-8482

2-bit E-MLC

EOL

samsung.com/flash

Solid State Drives (SSD)

2H 2013

FLASH PRODUCTS ORDERING INFORMATION

SAMSUNG Memory

NAND Flash

Small Classiﬁcation

Density

Pre-Program Version

Customer Bad Block

Temp

Package

Density

---

Organization

Vcc

Generation

Mode

1. Memory (K)

8. Vcc

13. Temp

A : 1.65V~3.6V

C : 5.0V (4.5V~5.5V)

E : 2.3V~3.6V

B : 2.7V (2.5V~2.9V)

D : 2.65V (2.4V~2.9V)

R : 1.8V (1.65V~1.95V)

T : 2.4V~3.0V

C : Commercial I : Industrial

0 : NONE (Containing Wafer, CHIP, BIZ, Exception

handling code)

2. NAND Flash : 9

3. Small Classification

Q : 1.8V (1.7V~1.95V)

U : 2.7V~3.6V

14. Customer Bad Block

(SLC : Single Level Cell, MLC : Multi Level Cell)

V : 3.3V (3.0V~3.6V)

B : Include Bad Block

W : 2.7V~5.5V, 3.0V~5.5V 0 : NONE

7 : SLC eMMC

8 : MLC eMMC

F : SLC Normal

G : MLC Normal

H : MLC QDP

D : Daisychain Sample

L : 1~5 Bad Block

9. Mode

0 : Normal

N : ini. 0 blk, add. 10 blk

S : All Good Block

1 : Dual nCE & Dual R/nB

3 : Tri/CE & Tri R/B

4 : Quad nCE & Single R/nB

5 : Quad nCE & Quad R/nB

9 : 1st block OTP

0 : NONE (Containing Wafer, CHIP, BIZ, Exception

handling code)

K : SLC DDP

L : MLC DDP

M : MLC DSP

15. Pre-Program Version

N : SLC DSP

0 : None

A : Mask Option 1

L : Low grade

P : MLC 8 Die Stack

Q : SLC 8 Die Stack

S : SLC Single SM

T : SLC SINGLE (S/B)

U : 2 Stack MSP

W : SLC 4 Die Stack

Serial (1~9, A~Z)

10. Generation

M : 1st Generation

A : 2nd Generation

B : 3rd Generation

C : 4th Generation

D : 5th Generation

4~5. Density

12 : 512M

56 : 256M

1G : 1G

11. ----

2G : 2G

12. Package

4G : 4G

A : COB

8G : 8G

B : FBGA (Halogen-Free, Lead-Free)

C : CHIP BIZ D : 63-TBGA

F : WSOP (Lead-Free) G : FBGA

H : TBGA (Lead-Free)

AG: 16G

BG: 32G

CG: 64G

DG : 128G

EG : 256G

LG : 24G

NG : 96G

ZG : 48G

00 : NONE

I : ULGA (Lead-Free) (12*17)

J : FBGA (Lead-Free)

L : ULGA (Lead-Free) (14*18)

M : TLGA N : TLGA2

P : TSOP1 (Lead-Free)

Q : TSOP2 (Lead-Free)

S : TSOP1 (Halogen-Free, Lead-Free)

T : TSOP2 U : COB (MMC)

V : WSOP W : Wafer

6~7. Organization

00 : NONE

08 : x8

Y : TSOP1 Z : WELP (Lead-Free)

16 : x16

samsung.com/flash

2H 2013

Flash Products Ordering Information

Samsung has a vast portfolio of eMCP products for a variety of devices, such as mobile phones and

tablets. The following illustration shows Samsung’s lineup of eMCP memory solutions, which can be

deployed in almost any application.

Samsung eMCP product suite with diﬀerent densities and types of

Mobile DRAM and eMMC

eMCP = eMMC + LPDDR1 or LPDDR2 or LPDDR3

ROM

64GB

32GB

16GB

8GB

4GB

2GB

256M

512M

12G

16G

20G RAM

samsung.com/mcp

Multi-Chip Packages

2H 2013

eMCP: eMMC + LPDDR3

Memory

eMMC Density

DRAM Density/Organization

4Gb*2 (x32, 1ch, 2CS)

Voltage (eMMC-DRAM)

3.3V/1.8V - 1.8V/1.2V

Package

4GB

221FBGA 11.5x13mm

8GB

eMMC & MDRAM

16GB

eMCP: eMMC + LPDDR2

Memory

eMMC Density

DRAM Density/Organization

Voltage (eMMC-DRAM)

Package

2Gb (x32)

3.3V/1.8V - 1.8V/1.2V

162FBGA 11.5x13mm

4GB

4Gb (x32)

4Gb*2 (x32, 1ch, 2CS)

8GB

eMMC & MDRAM

16GB

4Gb*4 (x32, 1ch, 2CS)

4Gb*2 (x32, 1ch, 2CS)

4Gb*4 (x32, 1ch, 2CS)

4Gb*2 (x32, 1ch, 2CS)

3.3V/1.8V - 1.8V/1.2V

162FBGA 11.5x13mm

32GB

64GB

eMCP: eMMC + MDDR

Memory

eMMC Density

DRAM Density/Organization

2Gb*2 (x32, 2CS/CKE)

2Gb*4 (x32, 2CS/CKE)

512Mb (x16)

Voltage (eMMC-DRAM)

3.3V/1.8V - 1.8V

Package

153FBGA 11.5x13mm

4GB

8GB

2Gb*4 (x32, 2CS/CKE)

512Mb (x16)

eMMC & MDRAM

16GB

32GB

64GB

512Mb (x16)

samsung.com/mcp

2H 2013

Multi-Chip Packages

SAMSUNG SOLID STATE DRIVES

STANDARD DATA

CENTER SERIES

PRO DATA

CENTER SERIES

DELUXE

ENTERPRISE SERIES

Read-Intensive

Environments

High-Read and

Write Environments

High-Write

Environments

Samsung PM843

2.5 inches

Samsung SM843T

2.5 inches

Samsung SM1625

2.5 inches

Form Factor

Capacity (GB)

Host Interface

120/240/480

120/240/480/960 GB

Serial ATA 3 (6 Gb/s)

100/200/400/800

SAS (6 Gb/s)

Serial ATA 3 (6 Gb/s)

MTBF

1.5 Million Hours

1x10¹⁶

2,000,000 hours

1x10¹⁷

2,000,000 hours

Uncorrectable Bit

Error Rate (UBER)

1x10¹⁷

Power Consumption (Active)

Power Consumption (Idle)

Random Read

4.2W

3.4W

300 mW

Up to 60,000 IOPS

Up to 98,000 IOPS

Up to 15,000 IOPS

Up to 100,000 IOPS

Random Write

Up to 2,500 IOPS

Up to 23,000 IOPS

(28% O/P: up to 35,000

IOPS)

Up to 3,860 TBW

Up to 2 WPD

Up to 10,200 TBW

Up to 10 WPD*

Random Terabytes

Written (TBW)

Up to 320 TBW

Up to 520 MB/s

Up to 330 MB/s

Up to 1,280 TBW

100 x 70 x 7mm

60g

Sequential Read

Sequential Writes

Up to 500 MB/s

Up to 370 MB/s

Up to 900 MB/s

Up to 500 MB/s

Up to 20,000 TBW

Up to 11 WPD

Up to 26,500 TBW

Up to 18 WPD*

Sequential Terabytes

Written (TBW)

Physical Dimensions

Weight

100 x 70 x 7mm

56g

100 x 70 x 15mm

169g

*WPD = Drive Writes Per Day for 5 Years

Which SSD is right for you?

For more information, email: [email protected]

samsung.com/flash-ssd

samsungodd.com

SSDs

2H 2013

SOLID STATE DRIVES (SSD)

Power-loss

Protection

Drive Type Drive Name Interface

Form Factor

Connector

Component

Density

Part Number

Status

128GB

256GB

512GB

128GB

256GB

512GB

128GB

256GB

512GB

120GB

240GB

480GB

120GB

240GB

480GB

120GB

240GB

480GB

960GB

100GB

200GB

400GB

800GB

MZMTD128HAFV-00000

MZMTD256HAGM-00000

MZMTD512HAGL-00000

MZMPD128HAFV-00000

MZMPD256HAGM-00000

MZMPD512HAGL-00000

MZHPU128HCGM-00000

MZHPU256HCGL-00000

MZHPU512HCGL-00000

MZ7TD120HAFV-000DA

MZ7TD240HAFV-000DA

MZ7TD480HAGM-000DA

MZ7PD120HAFV-000DA

MZ7PD240HAFV-000DA

MZ7PD480HAGM-000DA

MZ7WD120HCFV-00003

MZ7WD240HCFV-00003

MZ7WD480HCGM-00003

MZ7WD960HCGP-00003

MZ6ER100HAFV-00003

MZ6ER200HAGM-00003

MZ6ER400HAGL-00003

MZ6ER800HAGL-00003

EOL

PM841

SM841

XP941

PM843

SM843

SATA III - 6Gb/s

PCIe - SATAe

mSATA MO-300

Mini PCI-E

3-bit MLC

EOL

Client PC/

Embedded

mSATA MO-300

M.2 (22x80mm)

2.5" 7mmT

Mini PCI-E

M.2

2-bit MLC

3-bit MLC

2-bit MLC

EOL

SATA III - 6Gb/s

SF-8223

EOL

2.5" 7mmT

EOL

Data

Center

EOL

MP Q4

EOL

SM843T

SM1625

SATA III - 6Gb/s

2.5" 7mmT

SF-8223

2-bit MLC

Yes

EOL

Storage

Enclosure

SAS Gen 2.0 - 6Gb/s 2.5" 15mmT

SFF-8482

2-bit E-MLC

EOL

BLU RAy SLIM

Interface

Speed

Type

Lightscribe

Model

SATA

BD Writer 6X

Slim

Tray

SN-506BB

BLU RAy WRITER SLIM EXTERNAL

Interface

Speed

Type

Lightscribe

Model

USB 2.0

BD Writer 6X

Slim

Tray

SE-506BB

DVD-W H/H

Interface

Speed

Type

Lightscribe

Model

SATA

DVD Write 24X

H/H

Tray

SH-224DB

DVD-W SLIM

Interface

Speed

Type

Lightscribe

Model

SATA

DVD Write 8X

Slim

Tray

SN-208DB

DVD W SLIM EXTERNAL

Interface

Speed

Type

Tray

Lightscribe

Model

Ultra Slim

Slim

SE-218CB

SE-208DB

USB 2.0

DVD Write 8X

Tray

samsung.com/flash-ssd

samsungodd.com

2H 2013

SSDs & Optical Disc Drives

DID Product Classiﬁcation

SUPER NARROW BEzEL

OUTDOOR: HIGH LUMINANCE

» Up to 1500 nits

E-DID: Exclusive DID

P-DID: Performance DID

B-DID: Basic DID

» Video Wall

NARROW

» Narrow

» Black Bezel

WALL MOUNTED

LARGE FORMAT DISPLAy

» 70”/82”

» Thin/Light

» (Edge LED)

LANDSCAPE/PORTRAIT CONVERTIBLE

ANIT GLARE/ ANTI REFLECTIVE

Why DID Instead of TV?

Commercial (DID)

Consumer (TV)

WARRANTY

RELIABILITY

18 months to 2 years

90 days to 1 year

Public environments

Designed for in-home use in controlled environment

6-8 hours + daily duty cycle

20 hours + daily duty cycle

Variety of temperatures & location

In-home living room

Designed to resist image retention

120Hz /240Hz for full-motion video

Designed for TV signals

LCD backlight covers a wider color spectrum necessary for PC source

integration giving better picture quality

PICTURE QUALITY

LOCATION

AGAR coating for public viewing

Can be oriented in either portrait or landscape mode

Can only be oriented in landscape mode

Product Segmentation

HEAVY USE

E-DID: Exclusive

Includes all features of P-DID plus:

Professional

Outdoor Events Billboard

• Control Room

• Scoreboard

• Billboard

» Specialty: SNB, High Brightness

» Robust Design

• Simulation

• Sports Broadcasting

P-DID: Performance

Includes all features of B-DID plus:

Entertainment

Transportation

Communication Rental

• Casino

• Theatre

• Poster

• Menu

• Airport

• Train/Bus Station

• Conference Room

• Rental

» Narrow & Black Bezel

» Typ. Brightness: 700 (cd/m2)

• Staging

B-DID: Basic

» Landscape/Portrait

» High Reliability

Commercial

Education

• Kiosk

• Mart Board

• e-Board

» Pol. (Haze 44%)

» Long Lifetime: More than 2 Years

LIGHT USE

Product Segmentation

SUGGESTED

RUN TIME

TYPE ABBR

WARRANTY

BEZEL

BRIGHTNESS

USAGE

APPLICATIONS

PRICING

Narrow and

Super Narrow

E-DID Exclusive

2 years

20 hours +

450 to 1500 nits Heavy

Outdoor, Video Walls

High-value commercial range

P-DID Performance 2 years

B-DID Basic 18 months

Narrow

Normal

20 hours +

12 hours

600/700 nits

450 nits

Medium

Light

Semi-Outdoor

Indoor, e-Board

Mid-price range

High-value commercial range

samsungdisplay.com

DID Product Classification

2H 2013

SAMSUNG DIGITAL INFORMATION DISPLAy (DID) PANEL LINEUP

Current

Model

resolution

Brightness Contrast Response

High TNI

85°C

Type

Size

Bezel

Backlight

Frequency MP*

Comment

(typical)

Ratio

Time

Super

narrow

LTI216XM01

LTI460HN03

LTI460HN01

LTI460HN07

LTI460HN09

LTI460AA05

LTI460AN01

LTI460HN10

LTI550HN01

LTI550HN05

LTI550HN08

21.6" 960x960

D-LED

CCFL

450 nits

1500 nits

700 nits

450 nits

500 nits

450 nits

2,500 nits

700 nits

450 nits

500 nits

4,000:1

3,000:1

4,000:1

3,000:1

8ms

8Ms

8ms

60Hz

Now

Ltd

Square panel

85°C

110°C

85°C

Narrow +

Black

High Bright, Hi Temp

46"

16"

55"

FHD

Avail. LC, 1/4λ Pol.

Super

narrow

5.9mm Active to

Now

D-LED

CCFL

Active, LED

Super

narrow

Ltd

5.9mm Active to

Avail. Active, LED

Super

narrow

New

5.9mm Active to

10/13 Active, LED

Super

narrow

7.3mm Active to

Active

E-DID

EOL

Super

narrow

7.3mm Active to

Active, TiCu

CCFL

NEW

New

High Bright, Hi Temp

FHD

Narrow

D-LED

11/13 LC, 1/4λ Pol.

Super

narrow

5.9mm Active to

Now

Active, LED

Super

narrow

Ltd

5.9mm Active to

Avail. Active, LED

Super

narrow

New

5.7mm Active to

10/13 Active, LED

Narrow +

Black

Ltd

Avail.

LTI400HA08

LTI400HA10

LTI460HN05

LTI460HN08

LTI550HN03

LTI550HN06

LTI550HN07

40"

46"

55"

FHD

CCFL

E-LED

CCFL

E-LED

CCFL

E-LED

700 nits

450 nits

3,000:1

3,500:1

4,000:1

8ms

60Hz

85°C

Narrow

Now

LED

Narrow +

Black

Ltd

Avail.

Narrow

Now

Ltd

Avail.

P-DID

Now

New

7/13

LTI700HD01

70"

82"

FHD

Normal

CCFL

600 nits

450 nits

2,000:1

3,000:1

3,500:1

8ms

60Hz

EOL

Now

LTI820HT-L01

LTI460HN04-N 46"

85°C

LTI550HN02

LTI700HA02

55"

70"

E-Board; Landscape

mode only

FHD

Normal

E-LED

CCFL

400 nits

450 nits

4,000:1

2,000:1

3,000:1

8ms

60Hz

Now

EOL

85°C

B-DID

E-Board; Landscape

mode only

LTI820HD03

LTI820HA01

82"

New

8/13

E-Board; Landscape

mode only

E-LED

85°C

LTI460AP01

LTI220MT02

46"

Narrow

Transparent/No BLU

4,500:1

5,000:1

8ms

5ms

60Hz

Now

EOL

Transparent

WSXGA+

LVDS Input

samsungdisplay.com

2H 2013

DID Panel Lineup

TABLETS

Aspect

Ratio

Brightness

(nits)

Size

Mode

Resolution

H(RGB)

PPI

LTN070AL01

LTL070NL01

LTL080AL01

LTL101AL06

LTL101DL03

PLS

WXGA

WSVGA

WXGA

WQXGA

1280

1024

1280

2560

800

600

800

1600

16:10

16:09

16:10

216

170

189

149

300

400

N/A

400

370

EOL

Now

8.0" Open Cell

10.1"

MONITORS

Aspect

Ratio

Brightness

(nits)

Size

Mode

Resolution

H(RGB)

PPI

LTM230HT10

LTM230HT11

LTM230HL01

LTM270HT03

LTM270DL02

LTM270HL02

FHD

QHD

FHD

1920

2560

1920

1080

1440

1080

16:09

109

300

350

Ltd Avail.

New

23"

PLS

Now

27"

PLS

Now

samsungdisplay.com

Tablets & Monitors

2H 2013

Contacts

Feel free to contact your local distributor or sales representative with any Samsung sales inquiries.

Representatives

NAME

PRODUCTS

ADDRESS

MAIN PHONE

FAX

Adelsa

Memory

SLSI

Hacienda Corralejo #80

Bosque de Echegaray

52-555-560-5002

LCD

Naucalpan, Mexico 53310

Guadalajara office

Monterrey office

Cd. Juarez office

ATMI Sales

www.atmisales.com

Memory

SLSI

OREGON

4900 S.W. Griffith Drive

1-800-898-2446

503-643-8307

503-643-4364

Suite 253

Beaverton, OR 97005

WASHINGTON

8581 154th Ave. NE

Redmond WA 98052

425-869-7636

440-526-1991

425-869-9841

440-526-5426

Bear VAI Technology

www.bearvai.com

Memory

SLSI

MAIN OFFICE - BRECKSVILLE, OHIO

6910 Treeline Drive

LCD

Unit H

Brecksville, OH 44141

MAIN OFFICE - INDIANA

11451 Overlook Drive

Fishers, IN 46037

440-832-7637

440-526-1991

317-845-8650

440-526-5426

SOUTHERN OHIO OFFICES

2676 Longwood Dr.

Beavercreek, Ohio 45431

3130 Brookview Dr.

Galena, Ohio 43021

440-526-1991

440-526-5426

412-364-8776

PITTSBURGH OFFICE

1975 Menold Dr.

Allison Park, PA 15101

INDIANA/KENTUCKY OFFICES

11451 Overlook Drive

Fishers, IN 46038

440-526-1991

317-845-8650

440-526-5426

MICHIGAN OFFICES

5506 Alpine Ridge

Stevensville, MI 49127

17426 Willow Ridge

Northville, MI 48168

1844 Clover Ridge Drive

Howell, MI 48843

600 Broadway Ave NW #617

Grand Rapids, MI 49504

3120 Edgewood Park Dr.

Commerce Twp, MI 48382

Core Sales, Inc

www.coresales.com

Memory

SLSI

901 Warrenville Road

Suite 211

847-843-8888

LCD

Lisle, IL 60532

samsung.com/us/oem-solutions

2H 2013

Contacts

Representatives

NAME

PRODUCTS

ADDRESS

MAIN PHONE

FAX

Crestone Technology Group

www.crestonegroup.com

Memory

SLSI

COLORADO

7108 S. Alton Way

303-280-7202

720-482-2220

LCD

Building L

Centennial, CO 80112

UTAH*

*all employees are home office based

841 E. Rosefield Lane

Draper, UT 84020

1578 West Trailside Road

Farmington, UT 84025

CUSTOMER 1st

www.customer1st.com

Memory

SLSI

MINNESOTA

2950 Metro Drive, Suite 101

952 851 7909

952 851 7907

LCD

Bloomington, MN 55425

KANSAS

2111 E. Crossroad Lane, Suite 202

Olathe, KS 66062

IOWA

342 Eastland Drive SE

Cedar Rapids, IA 52403

Digit Tech Sales, Inc.

www.digit-tech.com

Memory

SLSI

LCD

P.O. BOX 1945

14 Calle Carro Ste 1

San German PR 00683-4089

787-892-4260

787-892-3366

Rua Dr. Renato Paes de Barros, 750-Cj.52

Itaim Bibi

5511-3165-2218

5511-3165-2216

Sao Paulo, SP, Brazil

Manaus, Brazil

Miami, FL

787-892-4260

905-629-0082

787-892-3366

InTELaTECH

www.intelatech.com

Memory

SLSI

ONTARIO-CANADA

5225 Orbitor Drive, Suite 2

Mississauga, ONT L4W 4Y8

905-624-6909

905-629-1795

905-629-8910

21 Concourse Gate, Suite 12

Ottawa, ONT K2E 7S4

905-629-0082

613-221-9160

ALBERTA-CANADA

403-686-6926

14939 Mt. McKenzie Drive SE

Calgary, Alberta T2Z 2M6

QUEBEC-CANADA

620 St. Jean Boulevard, Suite 202

Pointe Claire,Quebec H9R 3K2

905-629-0082

905-629-1795

BRITISH COLUMBIA-CANADA

5811 Cooney Road

Suit 305, South Tower

Vancouver, BC V5X 3M1

I-Squared Incorporated

www.isquared.com

Memory

SLSI

LCD

2635 N. 1st Street, Suite 128

San Jose, CA 95134

408-988-3400

631-234-2525

408-988-2079

631-234-2707

1250 B Street

Petaluma, CA 94952

Neptune Electronics (necco)

www.neccoelect.com

Memory

SLSI

11 Oval Drive, Suite 169

Islandia, NY 11749

LCD

New Elpis, Inc.

www.newelpis.com

LCD

2550 Matheson Boulevard E. Unit 129

Mississauga, ONT Canada L4W 4Z1

905-275-3516

781-229-8888

905-275-4109

781-229-1614

New Tech Solutions

www.ntsca.com

Memory

SLSI

26 Ray Avenue

Burlington, MA 01803

LCD

samsung.com/us/oem-solutions

Contacts

2H 2013

Representatives

NAME

PRODUCTS

ADDRESS

MAIN PHONE

FAX

Rep One Associates, Inc.

www.repone.com

Memory

SLSI

ALABAMA

303 Williams Avenue, Suite 1011

256-539-7371

256-533-4509

LCD

Huntsville, AL 35801

GEORGIA

3000 Langford Road, Building 300

Norcross, GA 30071

770-209-9242

678-591-6753

770-209-9245

919-424-3866

704-846-5925

NORTH CAROLINA

5540 Centerview Drive, Suite 200

Raleigh, NC 27606

704-846-5744

10800 Sikes Place, Suite 300

Charlotte, NC 28277

FLORIDA

128 Ledbury Drive

Longwood, FL 32779

West Associates

www.westassociates.com

Memory

SLSI

AUSTIN / SAN ANTONIO

4100 Duval Road

512-343-1199

512-343-1922

LCD

Building 1, Ste 102

Austin, TX 78759

DALLAS / OKLAHOMA / ARKANSAS

2745 Dallas Parkway, Suite 460

Plano, TX 75093

972-680-2800

512-343-1199

949-305-6869

972-699-0330

HOUSTON / VALLEY / LOUISIANA

1117 Cheshire Lane

Houston, TX 77018

512-343-1922

Tech Coast

http://tc-sales.com

Memory

System Logic

LCD

23121 Verdugo Drive, Suite 101

Laguna Hills, CA 92653

Email: [email protected]

Distributors

NAME

ADDRESS

MAIN PHONE

FAX

OTHER

Edge Electronics, Inc.

Headquarters

800-647-EDGE (3343)

631-471-3405

Email:

www.edgeelectronics.com

75 Orville Drive, Unit 2

Bohemia, NY 11716

[email protected]

Avnet, Inc.

www.avnet.com

Headquarters

2211 South 47th Street

Phoenix, AZ 85034

800-409-1483

For sales inquiries:

800-332-8638

www.avnetexpress.com

WPG Americas Inc.

www.wpgamericas.com

Corporate Office

5285 Hellyer Avenue, Suite 150

San Jose, CA 95138

408-392-8100

888-WPG-8881

408-436-9551

For sales inquiries:

[email protected]

Arrow Electronics, Inc.

www.arrow.com

Corporate Headquarters

7459 S. Lima Street

Englewood, CO 80112-5816

303-824-4000

For sales inquiries:

www.arrownac.com

[email protected]

800-833-3557

To access our online sales portal, visit: https://smarttools.ssi.samsung.com

For all product information please visit: samsung.com/us/oem-solutions

samsung.com/us/oem-solutions

2H 2013

Contacts

MEMORy

STORAGE

DISPLAyS

DRAM

Flash

SRAM

MCPs

Solid State Drives

Optical Disc Drives

Monitors

Smartphones

Tablets

TVs

Samsung Semiconductor, Inc.

601 McCarthy Boulevard

Milpitas, CA 95035

samsung.com/us/oem-solutions

Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of publication. Samsung assumes no responsibility, however, for possible

errors or omissions, or for any consequences resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products or product speciﬁcations with

the intent to improve function or design at any time and without notice and is not required to update this documentation to reﬂect such changes. This publication does not convey to a purchaser

of semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes no warranty, representation, or guarantee regarding the suitability of its

products for any particular purpose, nor does Samsung assume any liability arising out of the application or use of any product or circuit and speciﬁcally disclaims any and all liability, including

without limitation any consequential or incidental damages.

may be claimed as the property of others. The appearance of all products, dates, ﬁgures, diagrams and tables are subject to change at any time, without notice.

BR-13-ALL-001

Printed 08/13

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