INTEGRATED CIRCUITS
DATA SHEET
CGY2014TT
GSM/DCS/PCS power amplifier
Product specification
2000 Oct 16
Supersedes data of 2000 Apr 11
File under Integrated Circuits, IC17
Download from Www.Somanuals.com. All Manuals Search And Download.
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
BLOCK DIAGRAM
V
V
GND1
LB
DD1LB
7
DD2LB
6
8
9
13, 14
RFI
RFO/V
LB
DD3LB
1, 10, 11, 12,
16, 19, 20
15
2
n.c.
GND
CGY2014TT
17, 18
RFI
RFO/V
HB
DD3HB
3
4, 5
FCA180
V
V
DD1HB
DD2HB
Fig.1 Block diagram.
2000 Oct 16
3
Download from Www.Somanuals.com. All Manuals Search And Download.
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
PINNING
SYMBOL
n.c.
PIN
DESCRIPTION
1
not connected
RFIHB
2
DCS/PCS power amplifier input
VDD1HB
VDD2HB
VDD2HB
VDD2LB
VDD1LB
GND1LB
RFILB
3
DCS/PCS first stage supply voltage
DCS/PCS second stage supply voltage
DCS/PCS second stage supply voltage
GSM second stage supply voltage
GSM first stage supply voltage
GSM first stage ground
4
5
6
7
8
9
GSM power amplifier input
n.c.
10
not connected
n.c.
11
not connected
n.c.
12
not connected
RFO/VDD3LB
RFO/VDD3LB
GND
13
GSM power amplifier output and third stage supply voltage
GSM power amplifier output and third stage supply voltage
ground
14
15
n.c.
16
internal connection to ground; pin should not be connected to the board
RFO/VDD3HB
RFO/VDD3HB
n.c.
17
DCS/PCS power amplifier output and third stage supply voltage
18
DCS/PCS power amplifier output and third stage supply voltage
19
20
not connected
not connected
ground
n.c.
−
exposed die
FUNCTIONAL DESCRIPTION
Operating conditions
handbook, halfpage
The CGY2014TT is designed to meet the European
n.c.
1
2
3
4
5
6
7
8
9
20 n.c.
Telecommunications Standards Institute (ETSI) GSM
documents, the “ETS 300 577 specification”, which are
defined as follows:
RFI
19 n.c.
HB
DD1HB
DD2HB
DD2HB
DD2LB
DD1LB
V
V
V
V
V
18 RFO/V
17 RFO/V
16 n.c.
DD3HB
DD3HB
• ton = 570 µs
• T = 4.16 ms
• Duty cycle δ = 1/8.
CGY2014TT
15 GND
14 RFO/V
13 RFO/V
12 n.c.
Multislot operation can be implemented provided that the
application circuit does not drive the IC beyond the limiting
values.
DD3LB
DD3LB
GND1
RFI
LB
LB
Power amplifier
n.c. 10
11 n.c.
The GSM and DCS/PCS power amplifiers consist of three
cascaded gain stages with an open-drain configuration.
Each drain has to be loaded externally by an adequate
reactive circuit which also has to be a DC path to the
supply.
FCA181
Fig.2 Pin configuration.
2000 Oct 16
4
Download from Www.Somanuals.com. All Manuals Search And Download.
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VDD
Tj(max)
Tstg
PARAMETER
positive supply voltage
CONDITIONS
MAX.
5.2
UNIT
V
maximum operating junction temperature
storage temperature
150
150
2.0
10
°C
°C
Ptot
total power dissipation
note 1
W
Pi(LB)
Pi(HB)
GSM input power
dBm
dBm
DCS/PCS input power
10
Note
1. The total power dissipation is measured under GSM pulse conditions in a good thermal environment;
see “Application Note CTT0003”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
30 K/W
Rth(j-c)
thermal resistance from junction to case
note 1
Note
1. This thermal resistance is measured under GSM pulse conditions in a good thermal environment;
see “Application Note CTT0003”.
DC CHARACTERISTICS
VDD = 3.5 V; Tamb = 25 °C; general operating conditions applied; peak current values measured during burst; unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies: pins VDD1LB, VDD2LB, RFO/VDD3LB, VDD1HB, VDD2HB and RFO/VDD3HB
VDD
positive supply voltage
note 1
0
3.5
4.2
V
IDD(LB)
GSM positive peak supply current
Pi(LB) = 0 dBm
note 2
−
0.5
−
2
−
3
A
A
A
A
1.5
1.5
1
IDD(HB)
DCS/PCS positive peak supply current
Pi(HB) = 3 dBm
note 3
−
2
0.25
Notes
1. The supply circuit includes a (drain) MOS switch with RDSon = 40 mΩ. The battery voltage is 3.6 V (typical value).
2. No RF input signal or Pi(LB) < −30 dBm; VDD = 1 V.
3. No RF input signal or Pi(HB) < −30 dBm; VDD = 1 V.
2000 Oct 16
5
Download from Www.Somanuals.com. All Manuals Search And Download.
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
AC CHARACTERISTICS
VDD = 3.5 V; Tamb = 25 °C; measured on the Philips demoboard (see Fig.8).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Low band: GSM power amplifier
Pi(LB)
input power
−2
0
+2
dBm
fRF(LB)
RF frequency range
maximum output power
efficiency
880
34.5
50
−
35
915
−
−
MHz
dBm
%
Po(LB)(max)
ηLB
Po(LB)(min)
NRX(LB)
see Figs 3 and 4
see Fig.3
55
minimum output power
output noise in RX band
VDD = 0 V; Pi(LB) = 0 dBm
Pi(LB) = 0 dBm
−
−35
−
dBm
f
RF = 925 to 935 MHz
RF = 935 to 960 MHz
−
−
−
−
−
−
−
−
−
−
−117
−129
−35
−35
−60
dBm/Hz
dBm/Hz
dBc
f
H2LB
2nd harmonic level
3rd harmonic level
stability
Pi(LB) = 0 dBm
H3LB
Pi(LB) = 0 dBm
dBc
StabLB
Pi(LB) = 0 dBm; note 1
dBc
High band: DCS/PCS power amplifier; note 2
Pi(HB)
input power
2
3
5
dBm
MHz
dBm
%
fRF(HB)
Po(HB)(max)
ηHB
Po(HB)(min)
αHB
RF frequency range
maximum output power
efficiency
for DCS operation
1710
32
38
−
−
1785
−
−
−
−
see Figs 5 and 6
32.5
40
−32
0
see Fig.5
minimum output power
VDD = 0 V; Pi(HB) = 3 dBm
VDD(LB) = 3.5 V; Pi(LB) = 0 dBm;
dBm
dBm
high band isolation when
low band is operating
−
VDD(HB) = 0 V; Pi(HB) = 3 dBm;
note 3
NRX(HB)
H2HB
output noise in RX band
2nd harmonic level
3rd harmonic level
stability
Pi(HB) = 3 dBm
Pi(HB) = 3 dBm
Pi(HB) = 3 dBm
Pi(HB) = 3 dBm; note 1
−
−
−
−
−
−
−
−
−121
−35
−35
−60
dBm/Hz
dBc
H3HB
dBc
StabHB
dBc
Notes
1. The device is adjusted to provide nominal load power into a 50 Ω load. The device is switched off and a 6 : 1 load
replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees
during a 60 seconds test period.
2. The power amplifier can be matched to PCS and or DCS/PCS operation through optimization of the matching circuit.
3. Isolation can be improved to −20 dBm (typical value) with a pin diode switched in the DCS output matching.
2000 Oct 16
6
Download from Www.Somanuals.com. All Manuals Search And Download.
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
Performance characteristics in GSM band
FCA176
FCA171
40
handbook, halfpage
37
60
(3)
handbook, halfpage
P
o
η
(%)
efficiency
(dBm)
30
P
o
(dBm)
(2)
(1)
(1)
(2)
(3)
(3)
(2)
40
35
(1)
output power
20
10
20
33
0
0
31
0
1000
(MHz)
1
2
3
4
V
(V)
800
850
900
950
DD
f
RF
fRF(LB) = 900 MHz.
Pi(LB) = 0 dBm.
VDD1(LB) = 3 V.
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −20 °C.
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −20 °C.
V
DD1(LB) = 3 V.
VDD2(LB) = VDD3(LB) = 3.5 V.
Pi(LB) = 0 dBm.
VDD = VDD2(LB) = VDD3(LB)
.
Fig.3 Output power and efficiency as a function of
the frequency.
Fig.4 Output power as a function of the supply
voltage.
Performance characteristics in DCS band
FCA172
FCA173
35.5
55
40
handbook, halfpage
handbook, halfpage
P
P
η
o
o
(dBm)
34.5
(dBm)
30
(%)
efficiency
(3)
(2)
45
35
25
15
(1)
33.5
32.5
20
(1)
(2)
(3)
(3)
(2)
10
0
(1)
output power
1750
31.5
1650
1700
1800
1850
(MHz)
0
1
2
3
4
V
(V)
DD
f
RF
fRF(HB) = 1750 MHz.
Pi(HB) = 3 dBm.
VDD1(HB) = 3 V.
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −20 °C.
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −20 °C.
VDD1(HB) = 3 V.
VDD2(HB) = VDD3(HB) = 3.5 V.
Pi(HB) = 3 dBm.
VDD = VDD2(HB) = VDD3(HB)
.
Fig.5 Output power and efficiency as a function of
the frequency.
Fig.6 Output power as a function of the supply
voltage.
2000 Oct 16
7
Download from Www.Somanuals.com. All Manuals Search And Download.
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
APPLICATION INFORMATION
V
d23DCS
10 nF
TRL2
RF DCS
in
n.c.
n.c.
1
2
3
4
5
20
19
18
17
16
3.9 nH
TRL1
1 nF
TRL3
RFI
n.c.
HB
DD1HB
DD2HB
V
V
V
RFO/V
DD3HB
V
2.7 pF
d1DCS
1
pF
RF DCS
out
RFO/V
DD3HB
4.7
pF
3 pF
5.6 pF
100 pF
(1)
DD2HB
n.c.
CGY2014TT
V
V
DD2LB
DD1LB
BA891
GND
3.3 kΩ
6
15
14
13
12
11
100 pF
RFO/V
DD3LB
DD3LB
Vpin
V
7
8
d1GSM
3.3 nH
GND1
1 nF
6 pF
RFO/V
LB
LB
TRL4
TRL5
RFI
n.c.
n.c.
RF GSM
in
9
100 pF
n.c.
RF GSM
out
10
4.7 pF
9.1 pF
TRL6
4 pF
FCA174
V
d23GSM
56 pF
(1) Pin 16 is internally connected to ground and should not be connected to the board.
(2) Transmission lines:
Thickness 0.4 mm, substrate FR4 and εr = 4.7.
TRL1: width = 500 µm, length = 4.5 mm.
TRL2: width = 500 µm, length = 20 mm.
TRL3: width = 150 µm, length = 30 mm.
TRL4: width = 500 µm, length = 4 mm.
TRL5: width = 500 µm, length = 1.5 mm.
TRL6: width = 500 µm, length = 13 mm.
Fig.7 Application diagram.
2000 Oct 16
8
Download from Www.Somanuals.com. All Manuals Search And Download.
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
1 nF
6 pF
1 nF
3.3 nH
3.9 nH
4.7 pF
100 pF
1 pF
100 pF
CGY2014TT
4 pF
56 pF
10 nF
3 pF
4.7 pF
9.1 pF
BA891
2.7 pF
3.3 kΩ
5.6 pF
100 pF
FCA175
Dimensions: approximately 19 mm × 19 mm.
Fig.8 Part of layout of Philips demoboard.
9
2000 Oct 16
Download from Www.Somanuals.com. All Manuals Search And Download.
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
PACKAGE OUTLINE
HTSSOP20: plastic, heatsink thin shrink small outline package; 20 leads; body width 4.4 mm
SOT527-1
D
E
A
X
c
y
H
v
M
heathsink side
A
E
D
h
Z
11
20
(A )
3
A
2
A
E
h
A
1
pin 1 index
θ
L
p
L
1
10
detail X
w
M
b
p
e
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
A
(1)
(2)
(1)
UNIT
A
A
A
b
c
D
D
E
E
e
H
L
L
p
v
w
y
Z
θ
1
2
3
p
h
h
E
max.
8o
0o
0.15 0.95
0.05 0.80
0.30 0.20 6.6
0.19 0.09 6.4
4.3
4.1
4.5
4.3
3.1
2.9
6.6
6.2
0.75
0.50
0.5
0.2
mm
1.10
0.65
0.25
1.0
0.2
0.13
0.1
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
99-11-12
00-07-12
SOT527-1
2000 Oct 16
10
Download from Www.Somanuals.com. All Manuals Search And Download.
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Wave soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
2000 Oct 16
11
Download from Www.Somanuals.com. All Manuals Search And Download.
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
BGA, LFBGA, SQFP, TFBGA
WAVE
not suitable
REFLOW(1)
suitable
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS
PLCC(3), SO, SOJ
not suitable(2)
suitable
suitable
suitable
LQFP, QFP, TQFP
not recommended(3)(4) suitable
not recommended(5)
suitable
SSOP, TSSOP, VSO
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2000 Oct 16
12
Download from Www.Somanuals.com. All Manuals Search And Download.
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Oct 16
13
Download from Www.Somanuals.com. All Manuals Search And Download.
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
NOTES
2000 Oct 16
14
Download from Www.Somanuals.com. All Manuals Search And Download.
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
NOTES
2000 Oct 16
15
Download from Www.Somanuals.com. All Manuals Search And Download.
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Pakistan: see Singapore
Belgium: see The Netherlands
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Romania: see Italy
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Colombia: see South America
Tel. +65 350 2538, Fax. +65 251 6500
Czech Republic: see Austria
Slovakia: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Slovenia: see Italy
Tel. +45 33 29 3333, Fax. +45 33 29 3905
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. +66 2 361 7910, Fax. +66 2 398 3447
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Vietnam: see Singapore
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Middle East: see Italy
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
70
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403506/02/pp16
Date of release: 2000 Oct 16
Document order number: 9397 750 07455
Download from Www.Somanuals.com. All Manuals Search And Download.
|