MoBL® CY62148EV30
4-Mbit (512K x 8) Static RAM
Features
Functional Description
■ Very high speed: 45 ns
The CY62148EV30 is a high performance CMOS static RAM
organized as 512K words by 8 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL ) in portable
❐ Wide voltage range: 2.20V to 3.60V
®
■ Temperature ranges
❐ Industrial: –40°C to +85°C
❐ Automotive-A: –40°C to +85°C
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption. Placing the device into standby mode reduces
power consumption by more than 99 percent when deselected
(CE HIGH). The eight input and output pins (IO through IO ) are
■ Pin compatible with CY62148DV30
■ Ultra low standby power
0
7
placed in a high impedance state when the device is deselected
(CE HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW and WE LOW).
❐ Typical standby current: 1 μA
❐ Maximum standby current: 7 μA (Industrial)
■ Ultra low active power
❐ Typical active current: 2 mA at f = 1 MHz
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. Data on the eight IO pins (IO through IO ) is
0
7
then written into the location specified on the address pins (A
■ Easy memory expansion with CE, and OE features
■ Automatic power down when deselected
0
through A ).
18
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under
these conditions, the contents of the memory location specified
by the address pins appear on the IO pins.
■ CMOS for optimum speed and power
[1]
SOIC packages
Logic Block Diagram
A
0
IO
0
INPUT BUFFER
A
1
A
2
IO
1
A
3
A
4
IO
2
A
5
A
6
512K x 8
ARRAY
IO
3
A
A
A
A
A
A
7
8
IO
4
9
10
11
12
IO
5
IO
6
CE
IO
POWER
DOWN
7
COLUMN DECODER
WE
OE
Notes
1. SOIC package is available only in 55 ns speed bin.
2. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05576 Rev. *G
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised August 4, 2008
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MoBL® CY62148EV30
DC Input Voltage
.....................–0.3V to V
+ 0.3V
Maximum Ratings
CC(max)
Output Current into Outputs (LOW)............................. 20 mA
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Storage Temperature.................................. –65°C to +150°C
Latch up Current.....................................................> 200 mA
Ambient Temperature with
Power Applied .............................................. 55°C to +125°C
Operating Range
Supply Voltage to Ground
Potential..........................................–0.3V to V
Ambient
Product
Range
V
CC
+ 0.3V
+ 0.3V
CC(max)
Temperature
CY62148EV30 Ind’l/Auto-A –40°C to +85°C 2.2V to 3.6V
in High-Z State
........................–0.3V to V
CC(max)
Electrical Characteristics (Over the Operating Range)
- 45 (Ind’l/Auto-A)
- 55
Parameter
Description
Test Conditions
= –0.1 mA
Unit
Min Typ
2.0
Max
Min Typ
Max
V
V
V
V
Output HIGH
Voltage
I
I
I
I
2.0
2.4
V
V
V
V
V
V
V
OH
OL
IH
OH
OH
OL
OL
= –1.0 mA, V > 2.70V
2.4
CC
Output LOW
Voltage
= 0.1 mA
0.4
0.4
0.2
0.4
= 2.1 mA, V > 2.70V
CC
Input HIGH
Voltage
V
V
V
= 2.2V to 2.7V
= 2.7V to 3.6V
1.8
2.2
V
V
+ 0.3V 1.8
+ 0.3V 2.2
V
V
+ 0.3V
CC
CC
CC
CC
CC
CC
CC
+ 0.3V
Input LOW
Voltage
= 2.2V to 2.7V For VFBGA and
TSOP II package
–0.3
0.6
IL
For SOIC package
–0.3
0.4
V
V
V
= 2.7V to 3.6V For VFBGA and
TSOP II package
–0.3
0.8
CC
For SOIC package
–0.3
–1
0.6
+1
I
Input Leakage
Current
GND < V < V
CC
–1
–1
+1
+1
μA
μA
IX
I
I
Output Leakage GND < V < V , Output Disabled
–1
+1
20
OZ
O
CC
Current
I
V
Operating
f = f
= 1/t
V
= V
CC(max),
15
2
20
15
2
mA
CC
CC
max
RC
CC
Supply Current
I
= 0 mA,
OUT
f = 1 MHz
CE > V – 0.2V,
2.5
2.5
7
CMOS levels
I
Automatic CE
Power Down
Current—CMOS f = f
1
7
7
1
μA
μA
SB1
CC
CC
V
> V – 0.2V, V < 0.2V
IN
IN
(Address and Data Only),
max
Inputs
f = 0 (OE and WE), V = 3.60V
CC
I
Automatic CE
Power Down
CE > V – 0.2V,
1
1
7
SB2
CC
V
> V – 0.2V or V < 0.2V,
IN
CC IN
Current—CMOS f = 0, V = 3.60V
CC
Inputs
Notes
5.
6.
V
V
= –2.0V for pulse durations less than 20 ns.
IL(min)
= V + 0.75V for pulse durations less than 20 ns.
IH(max)
CC
7. Full device AC operation assumes a minimum of 100 μs ramp time from 0 to V
and 200 μs wait time after V stabilization.
CC
CC(min)
8. Under DC conditions the device meets a V of 0.8V (for V range of 2.7V to 3.6V) and 0.6V (for V range of 2.2V to 2.7V). However, in dynamic conditions
IL
CC
CC
Input LOW voltage applied to the device must not be higher than 0.6V and 0.4V for the above ranges. This is applicable to SOIC package only. Please refer to
AN13470 for details.
9. Only chip enable (CE) must be HIGH at CMOS level to meet the I
/ I
spec. Other inputs can be left floating.
SB2 CCDR
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MoBL® CY62148EV30
Capacitance (For All packages)
Parameter
Description
Input Capacitance
Output Capacitance
Test Conditions
T = 25°C, f = 1 MHz,
Max
10
Unit
pF
C
IN
A
V
= V
CC
CC(typ)
C
10
pF
OUT
Thermal Resistance [10]
VFBGA
TSOP II
SOIC
Parameter
Description
Test Conditions
Unit
Package Package Package
Θ
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 x 4.5 inch,
two-layer printed circuit board
72
75.13
8.95
55
22
°C/W
°C/W
JA
Θ
Thermal Resistance
(Junction to Case)
8.86
JC
AC Test Loads and Waveforms
R1
ALL INPUT PULSES
90%
V
CC
V
OUTPUT
CC
90%
10%
10%
R2
GND
Rise Time = 1 V/ns
30 pF
Fall Time = 1 V/ns
INCLUDING
JIG AND
SCOPE
Equivalent to:
THEVENIN EQUIVALENT
R
TH
OUTPUT
V
Parameters
2.50V
16667
15385
8000
3.0V
1103
1554
645
Unit
Ω
R1
R2
Ω
R
Ω
TH
V
1.20
1.75
V
TH
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min
Typ
Max Unit
V
V
for Data Retention
1.5
V
DR
CC
I
Data Retention Current
V
V
=1.5V, CE> V –0.2V, Ind’l/Auto-A
0.8
7
μA
CCDR
CC
CC
> V – 0.2V or V
<
IN
CC
IN
0.2V
t
t
Chip Deselect to Data Retention Time
Operation Recovery Time
0
ns
ns
CDR
t
R
RC
Data Retention Waveform
DATA RETENTION MODE
> 1.5V
V
V
CC(min)
V
CC(min)
VCC
DR
t
t
R
CDR
CE
Notes
10. Tested initially and after any design or process changes that may affect these parameters.
11. Full device AC operation requires linear V ramp from V to V > 100 μs or stable at V > 100 μs.
CC(min)
CC
DR
CC(min)
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MoBL® CY62148EV30
Switching Characteristics
(Over the Operating Range)
- 45 (Ind’l/Auto-A)
- 55
Parameter
Read Cycle
Description
Unit
Min
Max
Min
Max
t
t
t
t
t
t
t
t
t
t
t
Read Cycle Time
45
55
10
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
RC
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
45
55
AA
10
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
45
22
55
25
OE LOW to Low Z
5
10
0
5
10
0
OE HIGH to High Z
18
18
45
20
20
55
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power Up
CE HIGH to Power Up
PD
Write Cycle
t
t
t
t
t
t
t
t
t
t
Write Cycle Time
45
35
35
0
55
40
40
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WC
CE LOW to Write End
Address Setup to Write End
Address Hold from Write End
Address Setup to Write Start
WE Pulse Width
SCE
AW
HA
0
0
SA
35
25
0
40
25
0
PWE
SD
Data Setup to Write End
Data Hold from Write End
HD
WE LOW to High Z
18
20
HZWE
LZWE
WE HIGH to Low Z
10
10
Notes
12. Test Conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1 V/ns), timing reference levels of V
/2, input
CC(typ)
pulse levels of 0 to V
CC(typ)
OL OH
13. At any given temperature and voltage condition, t
is less than t
, t
is less than t
for any given device.
LZWE
HZCE
LZCE HZOE
LZOE
HZWE
14. t
, t
, and t
transitions are measured when the output enter a high impedance state.
HZOE HZCE
HZWE
15. The internal write time of the memory is defined by the overlap of WE, CE = V . All signals must be ACTIVE to initiate a write and any of these signals can
IL
terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.
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MoBL® CY62148EV30
Switching Waveforms
Figure 1. Read Cycle No. 1 (Address Transition Controlled)
tRC
ADDRESS
DATA OUT
t
AA
t
OHA
PREVIOUS DATA VALID
DATA VALID
Figure 2. Read Cycle No. 2 (OE Controlled)
ADDRESS
CE
t
RC
t
ACE
OE
t
HZOE
t
DOE
t
HZCE
t
LZOE
HIGH
IMPEDANCE
HIGH IMPEDANCE
DATA VALID
DATA OUT
t
LZCE
t
PD
ICC
t
V
CC
PU
50%
SUPPLY
CURRENT
50%
ISB
Figure 3. Write Cycle No. 1 (WE Controlled, OE HIGH During Write)
t
WC
ADDRESS
CE
t
SCE
t
t
HA
AW
t
SA
t
PWE
WE
OE
t
t
SD
HD
DATA IO
NOTE
DATA VALID
t
HZOE
Notes
16. Device is continuously selected. OE, CE = V .
IL
17. WE is HIGH for read cycles.
18. Address valid before or similar to CE transition LOW.
19. Data IO is high impedance if OE = V
.
IH
20. If CE goes HIGH simultaneously with WE HIGH, the output remains in high impedance state.
21. During this period, the IOs are in output state. Do not apply input signals.
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MoBL® CY62148EV30
Switching Waveforms (continued)
Figure 4. Write Cycle No. 2 (CE Controlled)
t
WC
ADDRESS
CE
t
SCE
t
SA
t
t
AW
HA
t
PWE
WE
t
t
HD
SD
DATA IO
DATA VALID
Figure 5. Write Cycle No. 3 (WE Controlled, OE LOW)
t
WC
ADDRESS
CE
t
SCE
t
t
HA
AW
t
SA
t
PWE
WE
t
t
HD
SD
NOTE
DATA VALID
DATA IO
t
t
LZWE
HZWE
Truth Table
CE
H
L
WE
X
OE
Inputs/Outputs
Mode
Power
Standby (I
X
L
High Z
Deselect/Power down
Read
)
SB
H
Data Out
High Z
Active (I
Active (I
Active (I
)
CC
L
H
H
X
Output Disabled
Write
)
CC
L
L
Data in
)
CC
Document #: 38-05576 Rev. *G
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MoBL® CY62148EV30
Ordering Information
Speed
(ns)
Package
Diagram
Operating
Range
Ordering Code
Package Type
45
CY62148EV30LL-45BVXI 51-85149 36-ball Very Fine Pitch Ball Grid Array (Pb-free)
CY62148EV30LL-45ZSXI 51-85095 32-pin Thin Small Outline Package II (Pb-free)
CY62148EV30LL-45ZSXA 51-85095 32-pin Thin Small Outline Package II (Pb-free)
Industrial
Automotive-A
Industrial
55
CY62148EV30LL-55SXI
51-85081 32-pin Small Outline Integrated Circuit (Pb-free)
Contact your local Cypress sales representative for availability of these parts.
Package Diagrams
Figure 6. 36-ball VFBGA (6 x 8 x 1 mm) (51-85149)
BOTTOM VIEW
A1 CORNER
TOP VIEW
Ø0.05 M C
Ø0.25 M C A B
A1 CORNER
Ø0.30 0.05(36X)
1
2
3
4
5
6
6
5
4
3
2
1
A
A
B
C
D
B
C
D
E
E
F
F
G
G
H
H
1.875
A
A
0.75
B
6.00 0.10
3.75
B
6.00 0.10
0.15(4X)
SEATING PLANE
C
51-85149-*C
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MoBL® CY62148EV30
Package Diagrams (continued)
Figure 7. 32-pin TSOP II (51-85095)
51-85095-**
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MoBL® CY62148EV30
Package Diagrams (continued)
Figure 8. 32-pin (450 MIL) Molded SOIC (51-85081)
16
1
0.546[13.868]
0.566[14.376]
0.440[11.176]
0.450[11.430]
17
32
0.793[20.142]
0.817[20.751]
0.006[0.152]
0.012[0.304]
0.101[2.565]
0.111[2.819]
0.118[2.997]
MAX.
0.004[0.102]
0.047[1.193]
0.063[1.600]
0.004[0.102]
0.050[1.270]
BSC.
0.023[0.584]
0.039[0.990]
MIN.
0.014[0.355]
0.020[0.508]
SEATING PLANE
51-85081-*B
Document #: 38-05576 Rev. *G
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MoBL® CY62148EV30
Document History Page
®
Document Title: CY62148EV30 MoBL 4-Mbit (512K x 8) Static RAM
Document Number: 38-05576
Revision
ECN
Submission Orig. of
Description of Change
Date
Change
**
223225
247373
See ECN
See ECN
AJU
New data sheet
*A
SYT Changed from Advance Information to Preliminary
Moved Product Portfolio to Page 2
Changed V stabilization time in footnote #7 from 100 μs to 200 μs
CC
Changed I
from 2.0 μA to 2.5 μA
CCDR
Changed typo in Data Retention Characteristics (t ) from 100 μs to t ns
R
RC
Changed t
Changed t
from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin
OHA
, t
from 12 to 15 ns for 35 ns Speed Bin and 15 to 18 ns for
HZOE HZWE
45 ns Speed Bin
Changed t
Speed Bin
Changed t
Speed Bin
from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns for 45 ns
SCE
from 12 to 18 ns for 35 ns Speed Bin and 15 to 22 ns for 45 ns
HZCE
Changed t from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for
SD
45 ns Speed Bin
Changed t
from 15 to 18 ns for 35 ns Speed Bin
DOE
Changed Ordering Information to include Pb-Free Packages
*B
414807
See ECN
ZSD Changed from Preliminary information to Final
Changed the address of Cypress Semiconductor Corporation on Page #1 from
“3901 North First Street” to “198 Champion Court”
Removed 35ns Speed Bin
Removed “L” version of CY62148EV30
Changed ball C3 from DNU to NC.
Removed the redundant footnote on DNU.
Changed I (max) value from 2 mA to 2.5 mA and I (Typ) value from
CC
CC
1.5 mA to 2 mA at f=1 MHz
Changed I (Typ) value from 12 mA to 15 mA at f = f
CC
max
Changed I
and I
Typ values from 0.7 μA to 1 μA and Max values from 2.5
SB1
SB2
μA to 7 μA.
Changed the AC test load capacitance value from 50pF to 30pF.
Changed I from 2.5 μA to 7 μA.
CCDR
Added I
typical value.
CCDR
Changed t
Changed t
Changed t
Changed t
from 3 ns to 5 ns
LZOE
LZCE
HZCE
PWE
and t
from 6 ns to 10 ns
LZWE
from 22 ns to 18 ns
from 30 ns to 35 ns.
Changed t from 22 ns to 25 ns.
SD
Updated the package diagram 36-pin VFBGA from *B to *C
Added 32-pin SOIC package diagram and pin diagram
Updated the ordering information table and replaced the Package Name column
with Package Diagram.
*C
464503
See ECN
NXR Included Automotive Range in product offering
Updated Thermal Resistance table
Updated the Ordering Information
*D
*E
833080
890962
See ECN
See ECN
VKN Added footnote 8
Added V spec for SOIC package
IL
VKN Removed Automotive part and its related information
Added footnote 2 related to SOIC package
Added footnote 9 related to I
SB2
Added AC values for 55 ns Industrial-SOIC range
Updated Ordering Information table
Document #: 38-05576 Rev. *G
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MoBL® CY62148EV30
®
Document Title: CY62148EV30 MoBL 4-Mbit (512K x 8) Static RAM
Document Number: 38-05576
Revision
ECN
Submission Orig. of
Description of Change
Date
Change
*F
987940
See ECN
VKN Changed V spec from 0.4V to 0.2V for SOIC package at I = 0.1 mA
OL
OL
Changed V spec from 0.6V to 0.4V for SOIC package at V = 2.2V to 2.7V
IL
CC
Updated footnote 8
Made footnote 9 applicable for both I
and I
CCDR
SB2
*G
2548575
08/05/08
NXR Added Auto-A information.
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at cypress.com/sales.
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© Cypress Semiconductor Corporation, 2004-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 38-05576 Rev. *G
Revised August 4, 2008
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MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor. All product and company names mentioned in this document are the
trademarks of their respective holders. All products and company names mentioned in this document may be the trademarks of their respective holders.
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