Fairchild 2N4123 User Manual

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2N4123  
TO-92  
C
B
E
NPN General Purpose Amplifier  
This device is designed for use as general purpose amplifiers  
and switches requiring collector currents to 100 mA.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
30  
40  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
200  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N4123  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
200  
Rθ  
JA  
°C/W  
2001 Fairchild Semiconductor Corporation  
2N4123, Rev A  
NPN General Purpose Amplifier  
(continued)  
Typical Characteristics  
Typical Pulsed Current Gain  
Collector-Emitter Saturation  
Voltage vs Collector Current  
vs Collector Current  
500  
400  
300  
200  
100  
0
V CE = 5V  
0.15  
0.1  
β = 10  
125 °C  
125 °C  
25 °C  
25 °C  
0.05  
- 40 °C  
- 40 °C  
0.1  
1
10  
100  
0.1  
1
10  
100  
I C - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Base-Emitter Saturation  
Voltage vs Collector Current  
Base-Emitter ON Voltage vs  
Collector Current  
1
0.8  
0.6  
0.4  
0.2  
V
= 5V  
1
β
= 10  
CE  
- 40 °C  
- 40 °C  
0.8  
0.6  
0.4  
25 °C  
25 °C  
125 °C  
125 °C  
0.1  
1
10  
100  
0.1  
1
10  
100  
I C - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Capacitance vs  
Reverse Bias Voltage  
Collector-Cutoff Current  
vs Ambient Temperature  
10  
500  
f = 1.0 MHz  
VCB= 30V  
100  
10  
1
5
4
C
ibo  
3
2
C
0.1  
obo  
1
0.1  
25  
50  
75  
100  
125  
150  
1
10  
100  
°
TA - AMBIENT TEMPERATURE ( C)  
REVERSE BIAS VOLTAGE (V)  
NPN General Purpose Amplifier  
(continued)  
Typical Characteristics (continued)  
Noise Figure vs Frequency  
Noise Figure vs Source Resistance  
12  
12  
10  
8
I
= 1.0 mA  
C
R
V CE = 5.0V  
I
= 1.0 mA  
C
= 200Ω  
S
10  
8
I
= 50 µA  
= 1.0 kΩ  
I
= 5.0 mA  
C
S
C
R
I
= 50 µA  
C
I
= 0.5 mA  
C
R
6
6
= 200Ω  
S
I
= 100 µA  
4
4
C
2
2
I
= 100 µA, R = 500 Ω  
C
S
0
0
0.1  
1
10  
100  
0.1  
1
10  
100  
f - FREQUENCY (kHz)  
R
S
- SOURCE RESISTANCE (  
)
kΩ  
Power Dissipation vs  
Ambient Temperature  
Current Gain and Phase Angle  
vs Frequency  
1
0.75  
0.5  
50  
0
45  
40  
35  
30  
25  
20  
15  
10  
5
20  
40  
h fe  
SOT-223  
60  
80  
100  
120  
TO-92  
θ
SOT-23  
140  
160  
180  
VCE = 40V  
0.25  
0
I C = 10 mA  
0
1
10  
100  
1000  
0
25  
50  
75  
100  
125  
150  
f - FREQUENCY (MHz)  
TEMPERATURE (oC)  
Turn-On Time vs Collector Current  
Rise Time vs Collector Current  
500  
500  
100  
I
c
I
c
IB1= IB2  
=
VCC = 40V  
IB1= IB2  
=
10  
10  
40V  
15V  
100  
T
= 25°C  
J
t
@ VCC = 3.0V  
r
T
= 125°C  
J
2.0V  
t
10  
5
10  
5
@ VCB = 0V  
d
1
10  
- COLLECTOR CURRENT (mA)  
100  
1
10  
- COLLECTOR CURRENT (mA)  
100  
I
C
I
C
NPN General Purpose Amplifier  
(continued)  
Typical Characteristics (continued)  
Storage Time vs Collector Current  
Fall Time vs Collector Current  
500  
500  
100  
I
I
c
c
IB1= IB2  
=
IB1= IB2  
=
10  
10  
T
= 25°C  
J
T
= 125°C  
VCC = 40V  
J
100  
T
= 125°C  
J
T
= 25°C  
J
10  
5
10  
5
1
10  
100  
1
10  
- COLLECTOR CURRENT (mA)  
100  
I
- COLLECTOR CURRENT (mA)  
I
C
C
Current Gain  
Output Admittance  
500  
100  
100  
10  
1
V
= 10 V  
V
= 10 V  
CE  
CE  
f = 1.0 kHz  
T
f = 1.0 kHz  
T
= 25oC  
= 25oC  
A
A
10  
0.1  
1
10  
0.1  
1
10  
I C - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Input Impedance  
Voltage Feedback Ratio  
100  
10  
7
V
= 10 V  
V
= 10 V  
CE  
CE  
f = 1.0 kHz  
T
f = 1.0 kHz  
T
= 25oC  
= 25oC  
A
A
5
4
10  
1
3
2
0.1  
1
0.1  
1
10  
0.1  
1
10  
IC - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
NPN General Purpose Amplifier  
(continued)  
Test Circuits  
3.0 V  
275 Ω  
300 ns  
10.6 V  
Duty Cycle = 2%  
10 KΩ  
0
C1 < 4.0 pF  
- 0.5 V  
< 1.0 ns  
FIGURE 1: Delay and Rise Time Equivalent Test Circuit  
3.0 V  
t1  
10 < t1  
<
500 µs  
10.9 V  
275 Ω  
Duty Cycle = 2%  
10 KΩ  
0
C1 < 4.0 pF  
1N916  
- 9.1 V  
< 1.0 ns  
FIGURE 2: Storage and Fall Time Equivalent Test Circuit  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
PowerTrench  
QFET™  
QS™  
SyncFET™  
TinyLogic™  
UHC™  
ACEx™  
FASTr™  
GlobalOptoisolator™  
GTO™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
QT Optoelectronics™  
VCX™  
HiSeC™  
Quiet Series™  
SILENT SWITCHER  
SMART START™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
ISOPLANAR™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
POP™  
E2CMOSTM  
EnSignaTM  
FACT™  
FACT Quiet Series™  
FAST  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. G  

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