Cypress NoBL CY7C1472V33 User Manual

CY7C1470V33

CY7C1472V33

CY7C1474V33

72-Mbit (2M x 36/4M x 18/1M x 72)

Pipelined SRAM with NoBL™ Architecture

Features

Functional Description

The CY7C1470V33, CY7C1472V33, and CY7C1474V33 are

• Pin-compatible and functionally equivalent to ZBT™

• Supports 250-MHz bus operations with zero wait states

— Available speed grades are 250, 200 and 167 MHz

3.3V, 2M x 36/4M x 18/1M x 72 Synchronous pipelined burst

SRAMs with No Bus Latency™ (NoBL™) logic, respectively.

They are designed to support unlimited true back-to-back

Read/Write operations with no wait states. The

CY7C1470V33, CY7C1472V33, and CY7C1474V33 are

equipped with the advanced (NoBL) logic required to enable

consecutive Read/Write operations with data being trans-

ferred on every clock cycle. This feature dramatically improves

the throughput of data in systems that require frequent

Write/Read transitions. The CY7C1470V33, CY7C1472V33,

and CY7C1474V33 are pin compatible and functionally equiv-

alent to ZBT devices.

• Internally self-timed output buffer control to eliminate

the need to use asynchronous OE

• Fully registered (inputs and outputs) for pipelined

operation

• Byte Write capability

• Single 3.3V power supply

• 3.3V/2.5V I/O power supply

• Fast clock-to-output time

All synchronous inputs pass through input registers controlled

by the rising edge of the clock. All data outputs pass through

output registers controlled by the rising edge of the clock. The

clock input is qualified by the Clock Enable (CEN) signal,

which when deasserted suspends operation and extends the

previous clock cycle.

— 3.0 ns (for 250-MHz device)

• Clock Enable (CEN) pin to suspend operation

• Synchronous self-timed writes

• CY7C1470V33, CY7C1472V33 available in

JEDEC-standard lead-free 100-pin TQFP, lead-free and

non-lead-free 165-ball FBGA package. CY7C1474V33

available in lead-free and non-lead-free 209 ball FBGA

package

Write operations are controlled by the Byte Write Selects

(BW –BW for CY7C1474V33, BW –BW for CY7C1470V33

and BW –BW for CY7C1472V33) and a Write Enable (WE)

input. All writes are conducted with on-chip synchronous

self-timed write circuitry.

• IEEE 1149.1 JTAG Boundary Scan compatible

• Burst capability—linear or interleaved burst order

• “ZZ” Sleep Mode option and Stop Clock option

Three synchronous Chip Enables (CE , CE , CE ) and an

asynchronous Output Enable (OE) provide for easy bank

selection and output tri-state control. In order to avoid bus

contention, the output drivers are synchronously tri-stated

during the data portion of a write sequence.

Logic Block Diagram-CY7C1470V33 (2M x 36)

ADDRESS

A0, A1, A

A1'

A0'

BURST

LOGIC

MODE

ADV/LD

CLK

CEN

WRITE ADDRESS

ADV/LD

BWa

BWb

BWc

BWd

WRITE REGISTRY

AND DATA COHERENCY

CONTROL LOGIC

MEMORY

ARRAY

DQs

WRITE

DRIVERS

DQP^a

DQPb

DQPc

DQPd

INPUT

READ LOGIC

CE1

CE2

CE3

SLEEP

CONTROL

Cypress Semiconductor Corporation

Document #: 38-05289 Rev. *I

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised June 20, 2006

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Pin Configurations

100-pin TQFP Packages

DQPc

DQc

DDQ

DQPb

DQb

DDQ

DQPa

DQa

DDQ

DQc

DQb

DQc

DQb

DDQ

DQa

DDQ

DQc

DQb

CY7C1472V33

(4M x 18)

CY7C1470V33

(2M x 36)

DQa

DQd

DQb

DQa

DQd

DDQ

DQa

DDQ

DQd

DQa

DQb

DQa DQPb

DQa

DDQ

DQd

DQPd

DQa

DQPa

Document #: 38-05289 Rev. *I

Page 3 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Pin Configurations (continued)

165-ball FBGA (15 x 17 x 1.4 mm) Pinout

CY7C1470V33 (2M x 36)

NC/576M

CE₃

CLK

ADV/LD

CEN

NC/1G

CE2

DQP

DDQ

DQP

DDQ

NC/144M

MODE

TDI

TDO

NC/288M

TMS

TCK

CY7C1472V33 (4M x 18)

NC/576M

NC/1G

CE₁

CE2

BW_b

CEN

ADV/LD

CLK

V_SS

BW_a

V_SS

V_DD

DQ_b

V_DDQ

V_SS

V_DD

V_DDQ

DQP_a

DQ_a

DQ_b

V_DDQ

V_DD

V_SS

V_DD

V_DDQ

DQ_a

DQ_b

V_DDQ

DQ_a

DQ_b

DQP_b

V_DDQ

V_DD

V_SS

V_DD

V_SS

V_DDQ

DQ_a

NC/144M

TDI

TDO

NC/288M

MODE

TMS

TCK

Document #: 38-05289 Rev. *I

Page 4 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Pin Configurations (continued)

209-ball FBGA (14 x 22 x 1.76 mm) Pinout

CY7C1474V33 (1M x 72)

DQg

ADV/LD

DQb

BWS

DQg

NC/576M CE

BWS

NC/1G

DQb

DQPb

DQf

DQPg

DQc

DQPc

DQc

DDQ

DQPf

DQf

CEN

DQc

DDQ

DQf

DDQ

DQf

DDQ

DQc

DQf

DQc

DDQ

DQf

CLK

DQh

DDQ

DQa

DDQ

DQh

DQa

DQh

DQPd

DQd

DDQ

DQa

DQPa

DQe

DQPh

DQd

DDQ

DQPe

DQe

MODE

NC/288M

NC/144M

DQd

DQe

TDI

TDO

TCK

TMS

Document #: 38-05289 Rev. *I

Page 5 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Pin Definitions

Pin Name

I/O Type

Input-

Synchronous the CLK.

Pin Description

Address Inputs used to select one of the address locations. Sampled at the rising edge of

Input-

Byte Write Select Inputs, active LOW. Qualified with WE to conduct writes to the SRAM.

Synchronous Sampled on the rising edge of CLK. BW controls DQ and DQP , BW controls DQ and DQP ,

BW controls DQ and DQP , BW controls DQ and DQP , BW controls DQ and DQP , BW

controls DQ and DQP , BW controls DQ and DQP , BW controls DQ and DQP .

Input-

Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This

Synchronous signal must be asserted LOW to initiate a write sequence.

ADV/LD

Input- Advance/Load Input used to advance the on-chip address counter or load a new address.

Synchronous When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a

new address can be loaded into the device for an access. After being deselected, ADV/LD should

be driven LOW in order to load a new address.

CLK

Input-

Clock

Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN.

CLK is only recognized if CEN is active LOW.

Input-

Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with

Synchronous CE and CE to select/deselect the device.

Input-

Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with

Synchronous CE and CE to select/deselect the device.

Input-

Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with

Synchronous CE and CE to select/deselect the device.

Input-

Output Enable, active LOW. Combined with the synchronous logic block inside the device to

Asynchronous control the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs.

When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during

the data portion of a write sequence, during the first clock when emerging from a deselected state

and when the device has been deselected.

CEN

Input-

Clock Enable Input, active LOW. When asserted LOW the clock signal is recognized by the

Synchronous SRAM. When deasserted HIGH the clock signal is masked. Since deasserting CEN does not

deselect the device, CEN can be used to extend the previous cycle when required.

I/O-

Synchronous by the rising edge of CLK. As outputs, they deliver the data contained in the memory location

specified by A during the previous clock rise of the read cycle. The direction of the pins is

Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered

[17:0]

controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave

as outputs. When HIGH, DQ –DQ are placed in a tri-state condition. The outputs are automat-

ically tri-stated during the data portion of a write sequence, during the first clock when emerging

from a deselected state, and when the device is deselected, regardless of the state of OE.

DQP

I/O-

Bidirectional Data Parity I/O lines. Functionally, these signals are identical to DQ . During write

Synchronous sequences, DQP is controlled by BW , DQP is controlled by BW , DQP is controlled by BW ,

and DQP is controlled by BW , DQP is controlled by BW , DQP is controlled by BW , DQP

is controlled by BW , DQP is controlled by BW .

MODE

TDO

TDI

Input Strap Pin Mode Input. Selects the burst order of the device. Tied HIGH selects the interleaved burst order.

Pulled LOW selects the linear burst order. MODE should not change states during operation.

When left floating MODE will default HIGH, to an interleaved burst order.

JTAG Serial

Output

Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK.

Synchronous

JTAG Serial Input Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK.

Synchronous

Document #: 38-05289 Rev. *I

Page 6 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Pin Definitions (continued)

Pin Name

I/O Type

Pin Description

TMS

Test Mode Select This pin controls the Test Access Port state machine. Sampled on the rising edge of TCK.

Synchronous

TCK

JTAG Clock

Clock input to the JTAG circuitry.

Power Supply Power supply inputs to the core of the device.

I/O Power Supply Power supply for the I/O circuitry.

DDQ

Ground

Ground for the device. Should be connected to ground of the system.

–

No connects. This pin is not connected to the die.

NC(144M,

288M,

These pins are not connected. They will be used for expansion to the 144M, 288M, 576M, and

1G densities.

576M, 1G)

Input-

ZZ “sleep” Input. This active HIGH input places the device in a non-time critical “sleep” condition

Asynchronous with data integrity preserved. During normal operation, this pin has to be LOW or left floating.

ZZ pin has an internal pull-down.

(250-MHz device) provided OE is active LOW. After the first

Functional Overview

clock of the Read access the output buffers are controlled by

OE and the internal control logic. OE must be driven LOW in

order for the device to drive out the requested data. During the

second clock, a subsequent operation (Read/Write/Deselect)

can be initiated. Deselecting the device is also pipelined.

Therefore, when the SRAM is deselected at clock rise by one

of the chip enable signals, its output will tri-state following the

next clock rise.

The CY7C1470V33, CY7C1472V33, and CY7C1474V33 are

synchronous-pipelined Burst NoBL SRAMs designed specifi-

cally to eliminate wait states during Write/Read transitions. All

synchronous inputs pass through input registers controlled by

the rising edge of the clock. The clock signal is qualified with

the Clock Enable input signal (CEN). If CEN is HIGH, the clock

signal is not recognized and all internal states are maintained.

All synchronous operations are qualified with CEN. All data

outputs pass through output registers controlled by the rising

edge of the clock. Maximum access delay from the clock rise

Burst Read Accesses

The CY7C1470V33, CY7C1472V33, and CY7C1474V33

have an on-chip burst counter that allows the user the ability

to supply a single address and conduct up to four Reads

without reasserting the address inputs. ADV/LD must be

driven LOW in order to load a new address into the SRAM, as

described in the Single Read Access section above. The

sequence of the burst counter is determined by the MODE

input signal. A LOW input on MODE selects a linear burst

mode, a HIGH selects an interleaved burst sequence. Both

burst counters use A0 and A1 in the burst sequence, and will

wrap-around when incremented sufficiently. A HIGH input on

ADV/LD will increment the internal burst counter regardless of

the state of chip enables inputs or WE. WE is latched at the

beginning of a burst cycle. Therefore, the type of access (Read

or Write) is maintained throughout the burst sequence.

(t ) is 3.0 ns (250-MHz device).

Accesses can be initiated by asserting all three Chip Enables

(CE , CE , CE ) active at the rising edge of the clock. If Clock

Enable (CEN) is active LOW and ADV/LD is asserted LOW,

the address presented to the device will be latched. The

access can either be a Read or Write operation, depending on

the status of the Write Enable (WE). BW can be used to

[x]

conduct Byte Write operations.

Write operations are qualified by the Write Enable (WE). All

Writes are simplified with on-chip synchronous self-timed write

circuitry.

Three synchronous Chip Enables (CE , CE , CE ) and an

asynchronous Output Enable (OE) simplify depth expansion.

All operations (Reads, Writes, and Deselects) are pipelined.

ADV/LD should be driven LOW once the device has been

deselected in order to load a new address for the next

operation.

Single Write Accesses

Write accesses are initiated when the following conditions are

satisfied at clock rise: (1) CEN is asserted LOW, (2) CE , CE ,

and CE are ALL asserted active, and (3) the Write signal WE

Single Read Accesses

is asserted LOW. The address presented to the address inputs

is loaded into the Address Register. The write signals are

latched into the Control Logic block.

A read access is initiated when the following conditions are

satisfied at clock rise: (1) CEN is asserted LOW, (2) CE , CE ,

and CE are ALL asserted active, (3) the Write Enable input

On the subsequent clock rise the data lines are automatically

tri-stated regardless of the state of the OE input signal. This

allows the external logic to present the data on DQ and DQP

signal WE is deasserted HIGH, and (4) ADV/LD is asserted

LOW. The address presented to the address inputs is latched

into the Address Register and presented to the memory core

and control logic. The control logic determines that a read

access is in progress and allows the requested data to

propagate to the input of the output register. At the rising edge

of the next clock the requested data is allowed to propagate

through the output register and onto the data bus within 3.0 ns

(DQ

/DQP

for

CY7C1474V33,

a,b,c,d,e,f,g,h

/DQP

for CY7C1470V33 and DQ /DQP for

a,b,c,d

a,b

CY7C1472V33). In addition, the address for the subsequent

access (Read/Write/Deselect) is latched into the Address

asserted).

Document #: 38-05289 Rev. *I

Page 7 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

On the next clock rise the data presented to DQ and DQP

CY7C1474V33, BW

CY7C1472V33) inputs must be driven in each cycle of the

burst write in order to write the correct bytes of data.

for CY7C1470V33 and BW

for

a,b,c,d

a,b

(DQ

/DQP

for

for CY7C1470V33 & DQ /DQP

a,b

CY7C1474V33,

a,b,c,d,e,f,g,h

/DQP

for

a,b,c,d

a,b

CY7C1472V33) (or a subset for byte write operations, see

Write Cycle Description table for details) inputs is latched into

the device and the write is complete.

Sleep Mode

The ZZ input pin is an asynchronous input. Asserting ZZ

places the SRAM in a power conservation “sleep” mode. Two

clock cycles are required to enter into or exit from this “sleep”

mode. While in this mode, data integrity is guaranteed.

Accesses pending when entering the “sleep” mode are not

considered valid nor is the completion of the operation

guaranteed. The device must be deselected prior to entering

the “sleep” mode. CE , CE , and CE , must remain inactive

The data written during the Write operation is controlled by BW

(BW

for

CY7C1474V33,

for

a,b,c,d,e,f,g,h

a,b,c,d

CY7C1470V33 and BW

for CY7C1472V33) signals. The

a,b

CY7C1470V33, CY7C1472V33, and CY7C1474V33 provides

Byte Write capability that is described in the Write Cycle

Description table. Asserting the Write Enable input (WE) with

the selected Byte Write Select (BW) input will selectively write

to only the desired bytes. Bytes not selected during a Byte

for the duration of t

after the ZZ input returns LOW.

ZZREC

Write operation will remain unaltered.

synchronous

Interleaved Burst Address Table

(MODE = Floating or V_DD

self-timed Write mechanism has been provided to simplify the

Write operations. Byte Write capability has been included in

order to greatly simplify Read/Modify/Write sequences, which

can be reduced to simple Byte Write operations.

)

First

Second

Address

Third

Address

Fourth

Address

Because

the

CY7C1470V33,

CY7C1472V33,

and

A1,A0

CY7C1474V33 are common I/O devices, data should not be

driven into the device while the outputs are active. The Output

Enable (OE) can be deasserted HIGH before presenting data

to the DQ and DQP (DQ

CY7C1474V33, DQ

/DQP

for

a,b,c,d,e,f,g,h

/DQP

for CY7C1470V33 and

a,b,c,d

DQ /DQP for CY7C1472V33) inputs. Doing so will tri-state

a,b

the output drivers. As a safety precaution, DQ and DQP

(DQ

/DQP

for

CY7C1474V33,

a,b,c,d,e,f,g,h

/DQP

for CY7C1470V33 and DQ /DQP for

Linear Burst Address Table (MODE = GND)

a,b,c,d

a,b

CY7C1472V33) are automatically tri-stated during the data

portion of a Write cycle, regardless of the state of OE.

First

Second

Address

Third

Address

Fourth

Address

Burst Write Accesses

A1,A0

The CY7C1470V33, CY7C1472V33, and CY7C1474V33 has

an on-chip burst counter that allows the user the ability to

supply a single address and conduct up to four Write opera-

tions without reasserting the address inputs. ADV/LD must be

driven LOW in order to load the initial address, as described

in the Single Write Access section above. When ADV/LD is

driven HIGH on the subsequent clock rise, the Chip Enables

(CE , CE , and CE ) and WE inputs are ignored and the burst

counter is incremented. The correct BW (BW

for

a,b,c,d,e,f,g,h

ZZ Mode Electrical Characteristics

Parameter

Description

Test Conditions

Min.

Max

Unit

Sleep mode standby current

Device operation to ZZ

ZZ recovery time

ZZ > V − 0.2V

120

DDZZ

ZZ > V − 0.2V

ZZS

CYC

ZZ < 0.2V

ZZREC

ZZI

CYC

ZZ active to sleep current

ZZ Inactive to exit sleep current

This parameter is sampled

RZZI

Document #: 38-05289 Rev. *I

Page 8 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Truth Table^{[1, 2, 3, 4, 5, 6, 7]}

Operation

Address Used

ADV/LD WE

CEN CLK

Deselect Cycle

None

L-H

Tri-State

Continue

Deselect Cycle

Read Cycle

(Begin Burst)

External

L-H

Data Out (Q)

Tri-State

Data In (D)

Tri-State

Read Cycle

(Continue Burst)

NOP/Dummy Read

(Begin Burst)

External

Dummy Read

(Continue Burst)

Write Cycle

(Begin Burst)

External

Write Cycle

(Continue Burst)

NOP/Write Abort

(Begin Burst)

None

Write Abort

(Continue Burst)

Ignore Clock Edge

(Stall)

Current

None

Sleep Mode

Tri-State

Notes:

1. X = “Don't Care”, H = Logic HIGH, L = Logic LOW, CE stands for ALL Chip Enables active. BWx = 0 signifies at least one Byte Write Select is active, BWx = Valid

signifies that the desired byte write selects are asserted, see Write Cycle Description table for details.

2. Write is defined by WE and BW

. See Write Cycle Description table for details.

[a:d]

3. When a Write cycle is detected, all I/Os are tri-stated, even during Byte Writes.

4. The DQ and DQP pins are controlled by the current cycle and the OE signal.

5. CEN = H inserts wait states.

6. Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE.

7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a Read cycle DQ and DQP

= tri-state when OE

[a:d]

is inactive or when the device is deselected, and DQ = data when OE is active.

Document #: 38-05289 Rev. *I

Page 9 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Partial Write Cycle Description^{[1, 2, 3, 8]}

Function (CY7C1470V33)

Read

Write – No bytes written

Write Byte a – (DQ and DQP )

Write Byte b – (DQ and DQP )

Write Bytes b, a

Write Byte c – (DQ and DQP )

Write Bytes c, a

Write Bytes c, b

Write Bytes c, b, a

Write Byte d – (DQ and DQP )

Write Bytes d, a

Write Bytes d, b

Write Bytes d, b, a

Write Bytes d, c

Write Bytes d, c, a

Write Bytes d, c, b

Write All Bytes

Function (CY7C1472V33)

Read

Write – No Bytes Written

Write Byte a – (DQ and DQP )

Write Byte b – (DQ and DQP )

Write Both Bytes

Function (CY7C1474V33)

Read

Write – No Bytes Written

Write Byte X − (DQ and DQP

Write All Bytes

All BW = L

Note:

8. Table only lists a partial listing of the Byte Write combinations. Any combination of BW

active.

is valid. Appropriate Write will be done based on which Byte Write is

[a:d]

Document #: 38-05289 Rev. *I

Page 10 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Test MODE SELECT (TMS)

IEEE 1149.1 Serial Boundary Scan (JTAG)

The TMS input is used to give commands to the TAP controller

and is sampled on the rising edge of TCK. It is allowable to

leave this ball unconnected if the TAP is not used. The ball is

pulled up internally, resulting in a logic HIGH level.

The CY7C1470V33, CY7C1472V33, and CY7C1474V33

incorporates a serial boundary scan test access port (TAP).

This port operates in accordance with IEEE Standard

1149.1-1990 but does not have the set of functions required

for full 1149.1 compliance. These functions from the IEEE

specification are excluded because their inclusion places an

added delay in the critical speed path of the SRAM. Note that

the TAP controller functions in a manner that does not conflict

with the operation of other devices using 1149.1 fully compliant

TAPs. The TAP operates using JEDEC-standard 3.3V or 2.5V

I/O logic levels.

Test Data-In (TDI)

The TDI ball is used to serially input information into the

registers and can be connected to the input of any of the

registers. The register between TDI and TDO is chosen by the

instruction that is loaded into the TAP instruction register. For

information on loading the instruction register, see the TAP

Controller State Diagram. TDI is internally pulled up and can

be unconnected if the TAP is unused in an application. TDI is

connected to the most significant bit (MSB) of any register.

(See Tap Controller Block Diagram.)

The CY7C1470V33, CY7C1472V33, and CY7C1474V33

contains a TAP controller, instruction register, boundary scan

Disabling the JTAG Feature

Test Data-Out (TDO)

It is possible to operate the SRAM without using the JTAG

feature. To disable the TAP controller, TCK must be tied LOW

The TDO output ball is used to serially clock data-out from the

registers. The output is active depending upon the current

state of the TAP state machine. The output changes on the

falling edge of TCK. TDO is connected to the least significant

bit (LSB) of any register. (See Tap Controller State Diagram.)

(V ) to prevent clocking of the device. TDI and TMS are inter-

nally pulled up and may be unconnected. They may alternately

be connected to V through a pull-up resistor. TDO should be

left unconnected. Upon power-up, the device will come up in

a reset state which will not interfere with the operation of the

device.

TAP Controller Block Diagram

TAP Controller State Diagram

Bypass Register

TEST-LOGIC

RESET

Selection

Circuitry

Instruction Register

31 30 29

Identification Register

Selection

Circuitry

TDI

TDO

RUN-TEST/

IDLE

SELECT

DR-SCAN

SELECT

IR-SCAN

CAPTURE-DR

CAPTURE-IR

Boundary Scan Register

SHIFT-DR

SHIFT-IR

EXIT1-DR

EXIT1-IR

TCK

TMS

TAP CONTROLLER

PAUSE-DR

PAUSE-IR

EXIT2-DR

EXIT2-IR

Performing a TAP Reset

A RESET is performed by forcing TMS HIGH (V ) for five

rising edges of TCK. This RESET does not affect the operation

of the SRAM and may be performed while the SRAM is

operating.

UPDATE-DR

UPDATE-IR

At power-up, the TAP is reset internally to ensure that TDO

comes up in a High-Z state.

The 0/1 next to each state represents the value of TMS at the

rising edge of TCK.

TAP Registers

Registers are connected between the TDI and TDO balls and

allow data to be scanned into and out of the SRAM test

circuitry. Only one register can be selected at a time through

the instruction register. Data is serially loaded into the TDI ball

on the rising edge of TCK. Data is output on the TDO ball on

the falling edge of TCK.

Test Access Port (TAP)

Test Clock (TCK)

The test clock is used only with the TAP controller. All inputs

are captured on the rising edge of TCK. All outputs are driven

from the falling edge of TCK.

Document #: 38-05289 Rev. *I

Page 11 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Instruction Register

Instructions are loaded into the TAP controller during the

Shift-IR state when the instruction register is placed between

TDI and TDO. During this state, instructions are shifted

through the instruction register through the TDI and TDO balls.

To execute the instruction once it is shifted in, the TAP

controller needs to be moved into the Update-IR state.

Three-bit instructions can be serially loaded into the instruction

TDI and TDO balls as shown in the Tap Controller Block

Diagram. Upon power-up, the instruction register is loaded

with the IDCODE instruction. It is also loaded with the IDCODE

instruction if the controller is placed in a reset state as

described in the previous section.

EXTEST

EXTEST is a mandatory 1149.1 instruction which is to be

executed whenever the instruction register is loaded with all

0s. EXTEST is not implemented in this SRAM TAP controller,

and therefore this device is not compliant to 1149.1. The TAP

controller does recognize an all-0 instruction.

When the TAP controller is in the Capture-IR state, the two

least significant bits are loaded with a binary “01” pattern to

allow for fault isolation of the board-level serial test data path.

Bypass Register

When an EXTEST instruction is loaded into the instruction

instruction has been loaded. There is one difference between

the two instructions. Unlike the SAMPLE/PRELOAD

instruction, EXTEST places the SRAM outputs in a High-Z

state.

To save time when serially shifting data through registers, it is

sometimes advantageous to skip certain chips. The bypass

TDI and TDO balls. This allows data to be shifted through the

SRAM with minimal delay. The bypass register is set LOW

(V ) when the BYPASS instruction is executed.

IDCODE

Boundary Scan Register

The IDCODE instruction causes a vendor-specific, 32-bit code

to be loaded into the instruction register. It also places the

instruction register between the TDI and TDO balls and allows

the IDCODE to be shifted out of the device when the TAP

controller enters the Shift-DR state.

The boundary scan register is connected to all the input and

bidirectional balls on the SRAM.

The boundary scan register is loaded with the contents of the

RAM I/O ring when the TAP controller is in the Capture-DR

state and is then placed between the TDI and TDO balls when

the controller is moved to the Shift-DR state. The EXTEST,

SAMPLE/PRELOAD and SAMPLE Z instructions can be used

to capture the contents of the I/O ring.

The IDCODE instruction is loaded into the instruction register

upon power-up or whenever the TAP controller is given a test

logic reset state.

The Boundary Scan Order tables show the order in which the

bits are connected. Each bit corresponds to one of the bumps

on the SRAM package. The MSB of the register is connected

to TDI and the LSB is connected to TDO.

SAMPLE Z

The SAMPLE Z instruction causes the boundary scan register

to be connected between the TDI and TDO balls when the TAP

controller is in a Shift-DR state. It also places all SRAM outputs

into a High-Z state.

Identification (ID) Register

The ID register is loaded with a vendor-specific, 32-bit code

during the Capture-DR state when the IDCODE command is

loaded in the instruction register. The IDCODE is hardwired

into the SRAM and can be shifted out when the TAP controller

is in the Shift-DR state. The ID register has a vendor code and

other information described in the Identification Register

Definitions table.

SAMPLE/PRELOAD

SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The

PRELOAD portion of this instruction is not implemented, so

the device TAP controller is not fully 1149.1 compliant.

When the SAMPLE/PRELOAD instruction is loaded into the

instruction register and the TAP controller is in the Capture-DR

state, a snapshot of data on the inputs and bidirectional balls

is captured in the boundary scan register.

TAP Instruction Set

The user must be aware that the TAP controller clock can only

operate at a frequency up to 20 MHz, while the SRAM clock

operates more than an order of magnitude faster. Because

there is a large difference in the clock frequencies, it is

possible that during the Capture-DR state, an input or output

will undergo a transition. The TAP may then try to capture a

signal while in transition (metastable state). This will not harm

the device, but there is no guarantee as to the value that will

be captured. Repeatable results may not be possible.

Overview

Eight different instructions are possible with the three-bit

instruction register. All combinations are listed in the

Instruction Codes table. Three of these instructions are listed

as RESERVED and should not be used. The other five instruc-

tions are described in detail below.

The TAP controller used in this SRAM is not fully compliant to

the 1149.1 convention because some of the mandatory 1149.1

instructions are not fully implemented.

To guarantee that the boundary scan register will capture the

correct value of a signal, the SRAM signal must be stabilized

long enough to meet the TAP controller’s capture set-up plus

hold time (t plus t ).

The TAP controller cannot be used to load address data or

control signals into the SRAM and cannot preload the I/O

buffers. The SRAM does not implement the 1149.1 commands

EXTEST or INTEST or the PRELOAD portion of

SAMPLE/PRELOAD; rather, it performs a capture of the I/O

ring when these instructions are executed.

The SRAM clock input might not be captured correctly if there

is no way in a design to stop (or slow) the clock during a

SAMPLE/PRELOAD instruction. If this is an issue, it is still

Document #: 38-05289 Rev. *I

Page 12 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

possible to capture all other signals and simply ignore the

value of the CLK captured in the boundary scan register.

BYPASS

When the BYPASS instruction is loaded in the instruction

advantage of the BYPASS instruction is that it shortens the

boundary scan path when multiple devices are connected

together on a board.

Once the data is captured, it is possible to shift out the data by

putting the TAP into the Shift-DR state. This places the

boundary scan register between the TDI and TDO balls.

Note that since the PRELOAD part of the command is not

implemented, putting the TAP to the Update-DR state while

performing a SAMPLE/PRELOAD instruction will have the

same effect as the Pause-DR command.

Reserved

These instructions are not implemented but are reserved for

future use. Do not use these instructions.

TAP Timing

Test Clock

(TCK)

CYC

TMSS

TDIS

TMSH

Test Mode Select

(TMS)

TDIH

Test Data-In

(TDI)

TDOV

TDOX

Test Data-Out

(TDO)

DON’T CARE

UNDEFINED

[9, 10]

TAP AC Switching Characteristics Over the Operating Range

Parameter

Clock

Description

Min.

Max

Unit

TCK Clock Cycle Time

TCK Clock Frequency

TCK Clock HIGH time

TCK Clock LOW time

MHz

TCYC

Output Times

TCK Clock LOW to TDO Valid

TCK Clock LOW to TDO Invalid

TDOV

TDOX

Set-up Times

TMS Set-up to TCK Clock Rise

TDI Set-up to TCK Clock Rise

Capture Set-up to TCK Rise

TMSS

TDIS

Hold Times

TMS Hold after TCK Clock Rise

TDI Hold after Clock Rise

TMSH

TDIH

Capture Hold after Clock Rise

Notes:

9. t and t refer to the set-up and hold time requirements of latching data from the boundary scan register.

10. Test conditions are specified using the load in TAP AC Test Conditions. t /t = 1 ns.

Document #: 38-05289 Rev. *I

Page 13 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

3.3V TAP AC Test Conditions

2.5V TAP AC Test Conditions

Input pulse levels ................................................ V to 3.3V

Input pulse levels.................................................V to 2.5V

Input rise and fall times................................................... 1 ns

Input timing reference levels...........................................1.5V

Output reference levels...................................................1.5V

Test load termination supply voltage...............................1.5V

Input rise and fall time .....................................................1 ns

Input timing reference levels......................................... 1.25V

Output reference levels ................................................ 1.25V

Test load termination supply voltage ............................ 1.25V

3.3V TAP AC Output Load Equivalent

2.5V TAP AC Output Load Equivalent

1.25V

1.5V

50Ω

TDO

Z_O= 50Ω

20pF

TAP DC Electrical Characteristics And Operating Conditions

[11]

(0°C < T < +70°C; V = 3.135V to 3.6V unless otherwise noted)

Parameter

Description

Test Conditions

Min.

2.4

2.0

2.9

2.1

Max.

Unit

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage

Input Load Current

= –4.0 mA,V

= –1.0 mA,V

= –100 µA

= 3.3V

= 2.5V

µA

OH1

DDQ

= 3.3V

= 2.5V

= 3.3V

= 2.5V

= 3.3V

= 2.5V

= 3.3V

= 2.5V

= 3.3V

= 2.5V

OH2

OL1

OL2

DDQ

= 8.0 mA

= 1.0 mA

= 100 µA

0.4

0.2

2.0

1.7

+ 0.3

–0.3

–5

0.8

0.7

GND < V < V

IN DDQ

Note:

11. All voltages referenced to V (GND).

Document #: 38-05289 Rev. *I

Page 14 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Identification Register Definitions

CY7C1470V33

CY7C1472V33

(4M x 18)

CY7C1474V33

(1M x 72)

Instruction Field

(2M x 36)

Description

Revision Number (31:29)

000

Describes the version number

Reserved for internal use

[12]

Device Depth (28:24)

01011

001000

01011

001000

Architecture/Memory

Type(23:18)

001000

Defines memory type and archi-

tecture

Bus Width/Density(17:12)

100100

010100

110100

Defines width and density

Cypress JEDEC ID Code

(11:1)

00000110100

Allows unique identification of

SRAM vendor

ID Register Presence

Indicator (0)

Indicates the presence of an ID

Scan Register Sizes

Bit Size (x36)

Bit Size (x18)

Bit Size (x72)

Instruction

Bypass

Boundary Scan Order - 165 FBGA

Boundary Scan Order - 209 FBGA

110

Identification Codes

Instruction

EXTEST

Code

Description

000

Captures I/O ring contents. Places the boundary scan register between TDI and TDO.

Forces all SRAM outputs to High-Z state. This instruction is not 1149.1 compliant.

IDCODE

001

010

Loads the ID register with the vendor ID code and places the register between TDI

and TDO. This operation does not affect SRAM operations.

SAMPLE Z

Captures I/O ring contents. Places the boundary scan register between TDI and TDO.

Forces all SRAM output drivers to a High-Z state.

RESERVED

011

100

Do Not Use: This instruction is reserved for future use.

SAMPLE/PRELOAD

Captures I/O ring contents. Places the boundary scan register between TDI and TDO.

Does not affect SRAM operation. This instruction does not implement 1149.1 preload

function and is therefore not 1149.1 compliant.

RESERVED

101

Do Not Use: This instruction is reserved for future use.

Note:

12. Bit #24 is “1” in the ID Register Definitions for both 2.5V and 3.3V versions of this device.

Document #: 38-05289 Rev. *I

Page 15 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Boundary Scan Exit Order (2M x 36)

Bit #

165-Ball ID

Bit #

165-Ball ID

Bit #

165-Ball ID

J11

Bit #

165-Ball ID

K10

J10

H11

G11

F11

E11

D10

D11

C11

G10

F10

E10

P10

R10

R11

N11

M11

L11

M10

L10

K11

A10

B10

Boundary Scan Exit Order (4M x 18)

Bit #

165-Ball ID

Bit #

165-Ball ID

Bit #

165-Ball ID

L10

Bit #

165-Ball ID

B10

K10

J10

H11

G11

F11

E11

D11

C11

A11

P10

R10

R11

M10

A10

Document #: 38-05289 Rev. *I

Page 16 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Boundary Scan Exit Order (1M x 72)

Bit #

209-Ball ID

Bit #

209-Ball ID

Bit #

209-Ball ID

U10

T11

Bit #

209-Ball ID

B11

B10

A11

A10

T10

R11

R10

P11

P10

N11

N10

M11

M10

L11

L10

J11

J10

100

101

102

103

104

105

106

107

108

109

110

H11

H10

G11

G10

F11

F10

E10

E11

D11

D10

C11

C10

W11

W10

V11

V10

U11

Document #: 38-05289 Rev. *I

Page 17 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Current into Outputs (LOW)......................................... 20 mA

Maximum Ratings

Static Discharge Voltage.......................................... > 2001V

(per MIL-STD-883, Method 3015)

(Above which the useful life may be impaired. For user guide-

lines, not tested.)

Latch-up Current.................................................... > 200 mA

Storage Temperature .................................–65°C to +150°C

Operating Range

Ambient Temperature with

Power Applied.............................................–55°C to +125°C

Ambient

Supply Voltage on V Relative to GND........ –0.5V to +4.6V

Range

Temperature

DDQ

Supply Voltage on V

Relative to GND ......–0.5V to +V

Commercial 0°C to +70°C

Industrial –40°C to +85°C

3.3V

–5%/+10%

2.5V – 5%

to V

DDQ

DC to Outputs in Tri-State................... –0.5V to V

+ 0.5V

DDQ

DC Input Voltage....................................–0.5V to V + 0.5V

[13, 14]

Electrical Characteristics Over the Operating Range

Parameter

Description

Power Supply Voltage

I/O Supply Voltage

Test Conditions

Min.

3.135

2.375

2.4

Max.

Unit

3.6

for 3.3V I/O

for 2.5V I/O

DDQ

2.625

Output HIGH Voltage

Output LOW Voltage

for 3.3V I/O, I = −4.0 mA

for 2.5V I/O, I = −1.0 mA

2.0

for 3.3V I/O, I = 8.0 mA

0.4

for 2.5V I/O, I = 1.0 mA

[13]

Input HIGH Voltage

for 3.3V I/O

for 2.5V I/O

for 3.3V I/O

for 2.5V I/O

2.0

1.7

+ 0.3V

0.8

[13]

Input LOW Voltage

–0.3

–5

0.7

Input Leakage Current GND ≤ V ≤ V

except ZZ and MODE

µA

DDQ

Input Current of MODE Input = V

–30

–5

µA

Input = V

Input Current of ZZ

Input = V

µA

Output Leakage Current GND ≤ V ≤ V

Output Disabled

–5

µA

DDQ,

Operating Supply

f = f

= Max., I

= 0 mA,

4.0-ns cycle, 250 MHz

5.0-ns cycle, 200 MHz

6.0-ns cycle, 167 MHz

500

450

245

120

OUT

= 1/t

CYC

MAX

Automatic CE

Power-down

Current—TTL Inputs

Max. V , Device Deselected, 4.0-ns cycle, 250 MHz

SB1

≥ V or V ≤ V ,

5.0-ns cycle, 200 MHz

6.0-ns cycle, 167 MHz

f = f

= 1/t

MAX CYC

Automatic CE

Power-down

Current—CMOS Inputs f = 0

Max. V , Device Deselected, All speed grades

SB2

≤ 0.3V or V > V

− 0.3V,

DDQ

Automatic CE

Power-down

Current—CMOS Inputs f = f

Max. V , Device Deselected, 4.0-ns cycle, 250 MHz

245

135

SB3

≤ 0.3V or V > V

− 0.3V,

DDQ

5.0-ns cycle, 200 MHz

6.0-ns cycle, 167 MHz

= 1/t

MAX

CYC

Automatic CE

Max. V , Device Deselected, All speed grades

SB4

Power-down

Current—TTL Inputs

≥ V or V ≤ V , f = 0

Notes:

13. Overshoot: V (AC) < V +1.5V (Pulse width less than t

/2), undershoot: V (AC)> –2V (Pulse width less than t

/2).

CYC

14. T

: Assumes a linear ramp from 0V to V (min.) within 200 ms. During this time V < V and V

< V

Power-up

DDQ DD

Document #: 38-05289 Rev. *I

Page 18 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Capacitance^[15]

100 TQFP 165 FBGA 209 FBGA

Parameter

Description

Test Conditions

Max.

Unit

Address Input Capacitance

Data Input Capacitance

Control Input Capacitance

Clock Input Capacitance

Input/Output Capacitance

T = 25°C, f = 1 MHz,

ADDRESS

DATA

CTRL

CLK

= 3.3V

= 2.5V

DDQ

I/O

Thermal Resistance^[15]

100 TQFP

Package

165 FBGA 209 FBGA

Parameters

Description

Test Conditions

Package

Unit

Thermal Resistance

(Junction to Ambient)

Test conditions follow standard

test methods and procedures for

measuring thermal impedance,

per EIA/JESD51.

24.63

16.3

15.2

°C/W

Thermal Resistance

(Junction to Case)

2.28

2.1

1.7

°C/W

AC Test Loads and Waveforms

3.3V I/O Test Load

R = 317Ω

3.3V

OUTPUT

R = 50Ω

OUTPUT

ALL INPUT PULSES

90%

V_DDQ

90%

10%

Z = 50Ω

10%

GND

5 pF

R = 351Ω

≤ 1 ns

V = 1.5V

INCLUDING

JIG AND

SCOPE

(c)

(a)

(b)

2.5V I/O Test Load

R = 1667Ω

2.5V

OUTPUT

R = 50Ω

OUTPUT

ALL INPUT PULSES

90%

V_DDQ

90%

10%

Z = 50Ω

10%

GND

5 pF

R = 1538Ω

≤ 1 ns

V = 1.25V

INCLUDING

JIG AND

SCOPE

(c)

(a)

(b)

Note:

15. Tested initially and after any design or process changes that may affect these parameters.

Document #: 38-05289 Rev. *I

Page 19 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

[16, 17]

Switching Characteristics Over the Operating Range

–250

Max.

–200

–167

Parameter

Description

(typical) to the First Access Read or Write

Min.

Max.

Min.

Max. Unit

[18]

Power

Clock

Clock Cycle Time

Maximum Operating Frequency

Clock HIGH

4.0

5.0

6.0

CYC

250

200

167

MHz

MAX

2.0

2.2

Clock LOW

Output Times

Data Output Valid After CLK Rise

OE LOW to Output Valid

3.0

3.4

OEV

DOH

CHZ

CLZ

Data Output Hold After CLK Rise

1.3

1.5

[19, 20, 21]

Clock to High-Z

3.0

3.4

[19, 20, 21]

Clock to Low-Z

[19, 20, 21]

OE HIGH to Output High-Z

EOHZ

EOLZ

[19, 20, 21]

OE LOW to Output Low-Z

Set-up Times

Address Set-up Before CLK Rise

Data Input Set-up Before CLK Rise

CEN Set-up Before CLK Rise

1.4

1.5

CENS

WES

ALS

CES

WE, BW Set-up Before CLK Rise

ADV/LD Set-up Before CLK Rise

Chip Select Set-up

Hold Times

Address Hold After CLK Rise

Data Input Hold After CLK Rise

CEN Hold After CLK Rise

0.4

0.5

CENH

WEH

ALH

CEH

WE, BW Hold After CLK Rise

ADV/LD Hold after CLK Rise

Chip Select Hold After CLK Rise

Notes:

16. Timing reference is 1.5V when V

= 3.3V and is 1.25V when V

= 2.5V.

DDQ

17. Test conditions shown in (a) of AC Test Loads unless otherwise noted.

18. This part has a voltage regulator internally; t

is the time power needs to be supplied above V minimum initially, before a Read or Write operation can be

power

initiated.

19. t

, t

, and t

are specified with AC test conditions shown in (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

EOHZ

CHZ CLZ EOLZ

20. At any given voltage and temperature, t

is less than t

and t

is less than t

to eliminate bus contention between SRAMs when sharing the same

EOHZ

EOLZ

CHZ

CLZ

data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed

to achieve High-Z prior to Low-Z under the same system conditions.

21. This parameter is sampled and not 100% tested.

Document #: 38-05289 Rev. *I

Page 20 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Switching Waveforms

[22, 23, 24]

Read/Write/Timing

CYC

CLK

CENS CENH

CEN

CES

CEH

ADV/LD

BWx

ADDRESS

DOH

OEV

CLZ

CHZ

Data

D(A1)

D(A2)

D(A2+1)

Q(A3)

Q(A4)

Q(A4+1)

D(A5)

Q(A6)

In-Out (DQ)

OEHZ

DOH

OELZ

WRITE

D(A1)

WRITE

D(A2)

BURST

WRITE

READ

Q(A3)

READ

Q(A4)

BURST

READ

WRITE

D(A5)

READ

Q(A6)

WRITE

D(A7)

DESELECT

D(A2+1)

Q(A4+1)

DON’T CARE

UNDEFINED

Notes:

22. For this waveform ZZ is tied LOW.

23. When CE is LOW, CE is LOW, CE is HIGH and CE is LOW. When CE is HIGH, CE is HIGH or CE is LOW or CE is HIGH.

24. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1= Interleaved). Burst operations are optional.

Document #: 38-05289 Rev. *I

Page 21 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Switching Waveforms (continued)

[22, 23, 25]

NOP, STALL and DESELECT Cycles

CLK

CEN

ADV/LD

BWx

ADDRESS

CHZ

D(A4)

D(A1)

Q(A2)

Q(A3)

Q(A5)

Data

In-Out (DQ)

WRITE

D(A1)

READ

Q(A2)

STALL

READ

Q(A3)

WRITE

D(A4)

STALL

NOP

READ

Q(A5)

DESELECT

CONTINUE

DESELECT

DON’T CARE

UNDEFINED

[26, 27]

ZZ Mode Timing

CLK

ZZREC

ZZI

SUPPLY

DDZZ

RZZI

ALL INPUTS

(except ZZ)

DESELECT or READ Only

Outputs (Q)

High-Z

DON’T CARE

Notes:

25. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrated CEN being used to create a pause. A Write is not performed during this cycle.

26. Device must be deselected when entering ZZ mode. See cycle description table for all possible signal conditions to deselect the device.

27. I/Os are in High-Z when exiting ZZ sleep mode.

Document #: 38-05289 Rev. *I

Page 22 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Ordering Information

Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or

visit www.cypress.com for actual products offered.

Speed

(MHz)

Package

Diagram

Operating

Range

Ordering Code

Part and Package Type

167 CY7C1470V33-167AXC 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free

CY7C1472V33-167AXC

Commercial

CY7C1470V33-167BZC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)

CY7C1472V33-167BZC

CY7C1470V33-167BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm) Lead-Free

CY7C1472V33-167BZXC

CY7C1474V33-167BGC 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)

CY7C1474V33-167BGXC

CY7C1470V33-167AXI

CY7C1472V33-167AXI

CY7C1470V33-167BZI

CY7C1472V33-167BZI

209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free

51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free

lndustrial

51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)

CY7C1470V33-167BZXI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm) Lead-Free

CY7C1472V33-167BZXI

CY7C1474V33-167BGI

CY7C1474V33-167BGXI

51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)

209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free

200 CY7C1470V33-200AXC 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free

CY7C1472V33-200AXC

Commercial

CY7C1470V33-200BZC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)

CY7C1472V33-200BZC

CY7C1470V33-200BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm) Lead-Free

CY7C1472V33-200BZXC

CY7C1474V33-200BGC 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)

CY7C1474V33-200BGXC

CY7C1470V33-200AXI

CY7C1472V33-200AXI

CY7C1470V33-200BZI

CY7C1472V33-200BZI

209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free

51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free

lndustrial

51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)

CY7C1470V33-200BZXI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm) Lead-Free

CY7C1472V33-200BZXI

CY7C1474V33-200BGI

CY7C1474V33-200BGXI

51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)

209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free

Document #: 38-05289 Rev. *I

Page 23 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Ordering Information (continued)

Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or

visit www.cypress.com for actual products offered.

Speed

(MHz)

Package

Diagram

Operating

Range

Ordering Code

Part and Package Type

250 CY7C1470V33-250AXC 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free

CY7C1472V33-250AXC

Commercial

CY7C1470V33-250BZC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)

CY7C1472V33-250BZC

CY7C1470V33-250BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free

CY7C1472V33-250BZXC

CY7C1474V33-250BGC 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)

CY7C1474V33-250BGXC

CY7C1470V33-250AXI

CY7C1472V33-250AXI

CY7C1470V33-250BZI

CY7C1472V33-250BZI

209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free

51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free

Industrial

51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)

CY7C1470V33-250BZXI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free

CY7C1472V33-250BZXI

CY7C1474V33-250BGI

CY7C1474V33-250BGXI

51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)

209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free

Document #: 38-05289 Rev. *I

Page 24 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Package Diagrams

100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) (51-85050)

16.00 0.20

14.00 0.10

1.40 0.05

100

0.30 0.08

0.65

TYP.

12° 1°

(8X)

SEE DETAIL

0.20 MAX.

1.60 MAX.

R 0.08 MIN.

0.20 MAX.

0° MIN.

SEATING PLANE

STAND-OFF

0.05 MIN.

0.15 MAX.

NOTE:

1. JEDEC STD REF MS-026

0.25

GAUGE PLANE

2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH

MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE

R 0.08 MIN.

0.20 MAX.

BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH

3. DIMENSIONS IN MILLIMETERS

0°-7°

0.60 0.15

0.20 MIN.

51-85050-*B

1.00 REF.

DETAIL

Document #: 38-05289 Rev. *I

Page 25 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Package Diagrams (continued)

165-ball FBGA (15 x 17 x 1.4 mm) (51-85165)

PIN 1 CORNER

BOTTOM VIEW

TOP VIEW

Ø0.05 M C

PIN 1 CORNER

Ø0.25 M C A B

Ø0.45 0.05(165X)

11 10

1.00

5.00

10.00

15.00 0.10

0.15(4X)

SEATING PLANE

51-85165-*A

Document #: 38-05289 Rev. *I

Page 26 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Package Diagrams (continued)

209-ball FBGA (14 x 22 x 1.76 mm) (51-85167)

51-85167-**

NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device

Technology. All product and company names mentioned in this document are the trademarks of their respective holders.

Document #: 38-05289 Rev. *I

Page 27 of 29

of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be

used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its

products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress

products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Document History Page

Document Title: CY7C1470V33/CY7C1472V33/CY7C1474V33 72-Mbit (2M x 36/4M x 18/1M x 72)

Pipelined SRAM with NoBL™ Architecture

Document Number: 38-05289

Orig. of

REV.

ECN No. Issue Date Change

Description of Change

114676

121520

08/06/02

01/27/03

PKS

CJM

New Data Sheet

Updated features for package offering

Removed 300-MHz offering

Changed tCO, tEOV, tCHZ, tEOHZ from 2.4 ns to 2.6 ns (250 MHz),

tDOH, tCLZ from 0.8 ns to 1.0 ns (250 MHz), tDOH, tCLZ from 1.0 ns

to 1.3 ns (200 MHz)

Updated ordering information

Changed Advanced Information to Preliminary

223721

See ECN

NJY

Changed timing diagrams

Changed logic block diagrams

Modified Functional Description

Modified “Functional Overview” section

Added boundary scan order for all packages

Included thermal numbers and capacitance values for all packages

Included IDD and ISB values

Removed 250-MHz offering and included 225-MHz speed bin

Changed package outline for 165FBGA package and 209-ball BGA package

Removed 119-BGA package offering

235012

243572

See ECN

RYQ

NJY

Minor Change: The data sheets do not match on the spec system and

external web

Changed ball C11,D11,E11,F11,G11 from DQPb,DQb,DQb,DQb,DQb to

DQPa,DQa,DQa,DQa,DQa in page 4

Modified capacitance values in page 20

299511

See ECN

SYT

Removed 225-MHz offering and included 250-MHz speed bin

Changed t

from 4.4 ns to 4.0 ns for 250-MHz Speed Bin

CYC

Changed Θ from 16.8 to 24.63 °C/W and Θ from 3.3 to 2.28 °C/W for

100 TQFP Package on Page # 20

Added lead-free information for 100-Pin TQFP and 165 FBGA Packages

Added comment of ‘Lead-free BG packages availability’ below the Ordering

Information

VBL

PCI

Add Industrial part numbers in Ordering Info section

323039

See ECN

Unshaded 250 MHz speed bin in the AC/DC Table and Selection Guide

Address expansion pins/balls in the pinouts for all packages are modified as

per JEDEC standard

Added Address Expansion pins in the Pin Definitions Table

Modified V , V Test Conditions

Changed package name from 209-ball PBGA to 209-ball FBGA on page# 5

Removed comment of ‘Lead-free BG packages availability below the

Ordering Information

Updated Ordering Information Table

Changed from Preliminary to Final

351937

See ECN

PCI

Updated Ordering Information Table

Document #: 38-05289 Rev. *I

Page 28 of 29

[+] Feedback

CY7C1470V33

CY7C1472V33

CY7C1474V33

Document Title: CY7C1470V33/CY7C1472V33/CY7C1474V33 72-Mbit (2M x 36/4M x 18/1M x 72)

Pipelined SRAM with NoBL™ Architecture

Document Number: 38-05289

Orig. of

REV.

ECN No. Issue Date Change

Description of Change

Converted from Preliminary to Final

416221

See ECN

RXU

Changed address of Cypress Semiconductor Corporation on Page# 1 from

“3901 North First Street” to “198 Champion Court”

Changed Three-state to Tri-state

Changed the description of I from Input Load Current to Input Leakage

Current on page# 18

Changed the I current values of MODE on page # 18 from –5 µA and 30 µA

to –30 µA and 5 µA

Changed the I current values of ZZ on page # 18 from –30 µA and 5 µA

to –5 µA and 30 µA

Changed V

to V

< V in page #18

DDQ VDD

DDQ DD

Replaced Package Name column with Package Diagram in the Ordering

Information table

Updated the Ordering Information Table

472335

See ECN

VKN

Corrected the typo in the pin configuration for 209-Ball FBGA pinout

(Corrected the ball name for H9 to V from V

SSQ

Added the Maximum Rating for Supply Voltage on V

Relative to GND.

DDQ

Changed t , t from 25 ns to 20 ns and t

from 5 ns to 10 ns in TAP

TH TL

TDOV

AC Switching Characteristics table.

Updated the Ordering Information table.

Document #: 38-05289 Rev. *I

Page 29 of 29

[+] Feedback

Hanns G HW216D User Manual
Eizo Nanao Computer Monitor TP1 User Manual
Cypress MoBL USB CY7C68003 User Manual
Cypress CY8CTST120 User Manual
Briggs Stratton 128800 User Manual
Black Decker Perfect Broil CTO4551KT User Manual
Black Box Computer Hardware LPS500A MM LC User Manual
Black Box Computer Hardware IC181C User Manual
AT T TL96371 User Manual
AEG Cooktop HK854080XB User Manual