Cypress CY7C150 User Manual

0  
CY7C150  
1Kx4 Static RAM  
Separate I/O paths eliminates the need to multiplex data in  
and data out, providing for simpler board layout and faster sys-  
tem performance. Outputs are three-stated during write, reset,  
deselect, or when output enable (OE) is held HIGH, allowing  
for easy memory expansion.  
Features  
• Memory reset function  
• 1024x4 staticRAM for control storein high-speed com-  
puters  
• CMOS for optimum speed/power  
• High speed  
Reset is initiated by selecting the device (CS = LOW) and tak-  
ing the reset (RS) input LOW. Within two memory cycles all  
bits are internally cleared to zero. Since chip select must be  
LOW for the device to be reset, a global reset signal can be  
employed, with only selected devices being cleared at any giv-  
en time.  
— 10 ns (commercial)  
— 12 ns (military)  
• Low power  
— 495 mW (commercial)  
— 550 mW (military)  
• Separate inputs and outputs  
Writing to the device is accomplished when the chip select  
(CS) and write enable (WE) inputs are both LOW. Data on the  
four data inputs (D0D3) is written into the memory location  
specified on the address pins (A0 through A9).  
5-voltpowersupply±10%toleranceinbothcommercial  
Reading the device is accomplished by taking chip select (CS)  
and output enable (OE) LOW while write enable (WE) remains  
HIGH. Under these conditions, the contents of the memory  
location specified on the address pins will appear on the four  
output pins (O0 through O3).  
and military  
Capable of withstanding greater than 2001V static dis-  
charge  
TTL-compatible inputs and outputs  
The outpt pins remain in high-impedance state when chip  
enable (CE) or output enable (OE) is HIGH, or write enable  
(WE) or reset (RS) is LOW.  
Functional Description  
The CY7C150 is a high-performance CMOS static RAM de-  
signed for use in cache memory, high-speed graphics, and  
data-acquisition applications. The CY7C150 has a memory re-  
set feature that allows the entire memory to be reset in two  
memory cycles.  
A die coat is used to insure alpha immunity.  
Logic Block Diagram  
PinConfiguration  
RS  
D D D D  
0
1
2
3
DIP/SOIC  
Top View  
CS  
OE  
DATAINPUT  
CONTROL  
A
A
4
V
A
2
3
1
2
3
4
5
24  
23  
22  
21  
20  
19  
18  
17  
6  
15  
1
13  
CC  
WE  
A
A
5
1
A
6
A
0
A
0
O
0
A
RS  
CS  
7
A
1
A
7C150  
8
6
7
8
O
1
64x64  
ARRAY  
A
2
A
9
D
0
WE  
OE  
D
3
D
O
3
O
A
3
O
2
A
4
D
9
1
10  
11  
12  
O
0
A
5
2
O
3
O
1
GND  
2
COLUMN
DECODER  
C150-2  
C1501  
A
6
A
7
A
8
A
9
Selection Guide  
7C15010 7C15012 7C15015 7C15025 7C15035  
Maximum Access Time (ns)  
Commercial  
Military  
10  
12  
12  
15  
15  
25  
25  
35  
90  
Maximum Operating Current (mA)  
Commercial  
Military  
90  
90  
90  
90  
100  
100  
100  
100  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-05024 Rev. **  
Revised August 24, 2001  
CY7C150  
Switching Characteristics Over the Operating Range[2,5]  
7C15010  
7C15012  
7C15015  
7C15025  
7C15035  
Parameter  
Description  
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit  
READ CYCLE  
tRC  
Read Cycle Time  
10  
2
12  
2
15  
2
25  
2
35  
2
ns  
ns  
ns  
tAA  
Address to Data Valid  
10  
8
12  
10  
15  
12  
25  
15  
35  
20  
tOHA  
Output Hold from Address  
Change  
tACS  
CS LOW to Data Valid  
CS LOW to Low Z[6]  
CS HIGH to High Z[6,7]  
OE LOW to Data Valid  
OE LOW to Low Z[6]  
OE HIGH to High Z[6,7]  
ns  
ns  
ns  
ns  
ns  
ns  
tLZCS  
tHZCS  
tDOE  
0
0
0
0
0
0
0
0
0
0
6
6
8
8
11  
10  
20  
15  
25  
20  
tLZOE  
tHZOE  
WRITE CYCLE[8]  
tWC Write Cycle Time  
tSCS  
tAW  
6
8
9
20  
25  
10  
6
12  
8
15  
11  
13  
2
25  
15  
20  
5
35  
20  
30  
5
ns  
ns  
ns  
ns  
ns  
n
ns  
ns  
ns  
ns  
CS LOW to Write End  
Address Set-Up to Write End  
Address Hold from Write End  
Address Set-Up to Write Start  
WE Pulse Width  
8
10  
2
tHA  
2
tSA  
2
2
2
5
5
tPWE  
tSD  
6
8
11  
11  
2
15  
15  
5
20  
20  
5
Data Set-Up to Write End  
Data Hold from Write End  
WE HIGH to Low Z[6]  
6
8
tHD  
2
2
tLZWE  
tHZWE  
0
0
0
0
0
WE LOW to High Z[6,7]  
6
8
12  
20  
25  
RESET CYCLE  
tRRC Reset Cycle Time  
tSAR  
20  
0
24  
0
30  
0
50  
0
70  
0
ns  
ns  
Address Valid to Beginning of  
Reset  
tSWER  
tSCSR  
Write Enable HIGH to Beginning  
of Reset  
0
0
0
0
0
0
0
0
0
0
ns  
ns  
Chip Select LOW to Beginning of  
Reset  
tPRS  
Reset Pulse Width  
10  
0
12  
0
15  
0
20  
0
30  
0
ns  
ns  
tHCSR  
Chip Select Hold After End of  
Reset  
tHWER  
Write Enable Hold After End of  
Reset  
8
12  
15  
30  
40  
ns  
tHAR  
Address Hold After End of Reset  
Reset HIGH to Output in Low Z[6]  
10  
0
12  
0
15  
0
30  
0
40  
0
ns  
ns  
ns  
tLZRS  
tHZRS  
Reset LOW to Output in  
High Z[6,7]  
6
8
12  
20  
25  
Notes:  
5. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified  
OL/IOH and 30-pF load capacitance.  
6. At any given temperature and voltage condition, tHZ is less than tLZ for any given device.  
7.  
I
t
HZCS, tHZOE, tHZR, and tHZWE are tested with CL = 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.  
8. The internal write time of the memory is defined by the overlap of CS LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate  
a write by going HIGH. The data input set-up and hold timing should be reference to the rising edge of the signal that terminates the write.  
Document #: 38-05024 Rev. **  
Page 3 of 11  
         
CY7C150  
Switching Waveforms  
[9,10]  
Read Cycle No.1  
t
RC  
ADDRESS  
t
AA  
t
OHA  
DATA OUT  
PREVIOUS DATA VALID  
DATA VALID  
C150-5  
[9,11]  
Read CycleNo. 2  
t
RC  
CE  
t
ACS  
OE  
t
t
HZOE  
t
DOE  
HZCS  
t
LZOE  
HIGH  
IMPEDANCE  
HIGH IMPEDANCE  
DATA OUT  
DAA VALID  
t
LZCS  
C150-6  
Write CycleNo.1(WEControlled) [8]  
t
WC  
ADDRESS  
CE  
t
SCS  
t
t
HA  
AW  
t
SA  
t
PWE  
WE  
t
t
HD  
SD  
DATA VALID  
DATA IN  
IN  
t
t
LZWE  
HZWE  
HIGH IMPEDANCE  
DATA I/O  
DATA UNDEFNED  
C150-7  
Notes:  
9. WE is HIGH for read cycle.  
10. Device is continuously selected, CS and OE = VIL.  
11. Address prior to or coincident with CS transition LOW.  
Document #: 38-05024 Rev. **  
Page 4 of 11  
     
CY7C150  
Switching Waveforms (continued)  
Write Cycle No2. (CS Controlled) [8,12]  
t
WC  
ADDRESS  
t
SA  
t
SCS  
CE  
t
t
HA  
AW  
t
PWE  
WE  
t
t
HD  
SD  
DATA VALID  
DATA IN  
DATA I/O  
IN  
t
HZWE  
HIGH IMPEDANCE  
DATA UNDEFINED  
C150-8  
Reset Cycle [13]  
t
RRC  
ADDRESS  
WE  
t
t
SAR  
t
HAR  
t
SWER  
HWER  
t
t
HCSR  
CS  
SCSR  
t
PRS  
RESET  
t
t
LZRS  
HZRS  
DATA I/O  
HIGH  
IMPEDANCE  
OUTPUT VALID ZERO  
C150-9  
Notes:  
12. If CS goes HIGH with WE HIGH, the output remains in a high-impedance stae.  
13. Reset cycle is defined by the overlap of RS and CS for the minimum reset pulse width.  
Document #: 38-05024 Rev. **  
Page 5 of 11  
   
CY7C150  
Typical DC and AC Characteristics  
NORMALIZED SUPPLY CURRENT  
vs.AMBIENT TEMPERATURE  
OUTPUT OURCE CURRENT  
vs.OUTPUT VOLTAGE  
NORMALIZED SUPPLY CURRENT  
vs.SUPPLY VOLTAGE  
60  
50  
40  
30  
20  
1.4  
1.2  
1.2  
1.0  
0.8  
I
I
CC  
CC  
1.0  
0.8  
0.6  
V
CC  
=5.0V  
0.6  
0.4  
T =25°C  
A
V
V
IN  
=5.0V  
=5.0V  
CC  
0.4  
0.2  
0.0  
10  
0
I
SB  
0.2  
0.0  
I
SB  
55  
25  
125  
0.0  
1.0  
2.0  
.0  
4.0  
4.0  
4.5  
5.0  
5.5  
6.0  
AMBIENT TEMPERATURE(°C)  
OUTPUT VOLTAGE(V)  
SUPPLY VOLTAGE(V)  
NORMALIZED ACCESS TIME  
vs.AMBIENT TEMPERATURE  
OUTPUT SINK CURRENT  
vs.OUTPUT VOLTAGE  
NORMALIZED ACCESS TIME  
vs.SUPPLY VOLTAGE  
150  
125  
1.6  
1.4  
1.4  
1.3  
1.2  
100  
75  
V
CC  
=5.0V  
1.2  
1.0  
T =25°C  
A
1.1  
1.0  
T =25°C  
A
50  
V
CC  
=5.0V  
0.8  
25  
0
0.9  
0.8  
0.6  
55  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
25  
125  
4.0  
4.5  
5.0  
5.5  
6.0  
AMBIENT TEMPERATURE(°C)  
OUTPUT VOLTAGE(V)  
SUPPLY VOLTAGE(V)  
TYPICALPOWERONCURRENT  
vs.SUPPLYVOLTAGE  
TYPICAL ACCESS TIME CHANGE  
s.OUTPUT LOADING  
NORMALIZED I vs.CYCLETIME  
CC  
3.0  
2.5  
2.0  
1.5  
30  
1.1  
1.0  
0.9  
0.8  
V
=5.0V  
CC  
T =25°C  
A
V
CC  
=0.5V  
20  
1.0  
0.5  
0.0  
10  
0
V
=4.5V  
CC  
T =25°C  
A
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
0
00 400  
600 800 1000  
10  
20  
30  
40  
SUPPLY VOLTAGE(V)  
CAPACITANCE (pF)  
CYCLE FREQUENCY (MHz)  
Document #: 38-05024 Rev. **  
Page 6 of 11  
CY7C150  
Truth Table  
Inputs  
CS WE OE RS  
Outputs  
High Z  
Mode  
Not Selected  
Reset  
H
L
L
L
L
X
H
L
X
X
X
L
X
L
High Z  
High Z  
O0O3  
High Z  
H
H
H
Write  
H
X
Read  
H
Output Disable  
Ordering Information  
Speed  
Package  
Operating  
Range  
(ns)  
Ordering Code  
CY7C15010PC  
CY7C15010SC  
CY7C15012PC  
CY7C15012SC  
CY7C15012DMB  
CY7C15015PC  
CY7C15015SC  
CY7C15015DMB  
CY7C15025PC  
CY7C15025SC  
CY7C15025DMB  
CY7C15035DMB  
Name  
P13A  
S13  
Package Type  
10  
24-Lead (300-Mil) Molded DIP Commercial  
24-Lead Molded SOIC  
12  
15  
25  
35  
P13A  
S13  
24-Lead (300-Mil) Molded DIP Commercial  
24-Lead Molded SOIC  
D14  
24-Lead (300-Mil) CerDIP  
Military  
P13A  
S13  
24-Lead (300-Mil) Molded DIP Commercial  
24-Lead Molded SOIC  
D14  
24-Lead (300-Mil) CerDIP  
Military  
P13A  
S13  
24-Lead (300-Mil) Molded DIP Commercial  
24-Lead Molded SOIC  
D14  
24-Lead (300-Mil) CerDIP  
24-Lead (300-Mil) CerDIP  
Military  
Military  
D14  
Document #: 38-05024 Rev. **  
Page 7 of 11  
CY7C150  
MILITARY SPECIFICATIONS  
Group A Subgroup Testing  
Switching Characteristics  
Parameter  
Subgroups  
READ CYCLE  
DC Characteristics  
tRC  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
Parameter  
VOH  
Subgroups  
1, 2, 3  
tAA  
tOHA  
VOL  
VIH  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
tACS  
WRITE CYCLE  
VIL Max.  
IIX  
tWC  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
tSCS  
IOZ  
tAW  
ICC  
tHA  
tSA  
tPWE  
tSD  
tHD  
RESET CYCLE  
tRRC  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
7, 8, 9, 10, 11  
tSAR  
tSWER  
tSCSR  
tPRS  
tHCSR  
tHWER  
tHAR  
Document #: 38-05024 Rev. **  
Page 8 of 11  
CY7C150  
Package Diagrams  
24-Lead (300-Mil) CerDIP D14  
MIL-STD-1835 D- 9Config.A  
24-Lead (300-Mil) Molded DIP P13/P13A  
Document #: 38-05024 Rev. **  
Page 9 of 11  
CY7C150  
Package Diagrams (continued)  
24-Lead Molded SOIC S13  
Document #: 38-05024 Rev. **  
Page 10 of 11  
© Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use  
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize  
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress  
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.  
CY7C150  
Document Title: Cy7C150 1K x4 Static RAM  
Document Number: 38-05024  
Issue  
ECN NO. Date  
Orig. of  
Change  
REV.  
Description of Change  
**  
106810  
09/10/01  
SZV  
Change from Spec number: 38-00028 to 38-05024  

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