CY7C1480V25
CY7C1482V25
CY7C1486V25
72-Mbit (2M x 36/4M x 18/1M x 72)
Pipelined Sync SRAM
Features
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 200, and 167 MHz
• Registered inputs and outputs for pipelined operation
• 2.5V core power supply
The CY7C1480V25/CY7C1482V25/CY7C1486V25 SRAM
integrates 2M x 36/4M x 18/1M × 72 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
• 2.5V/1.8V IO operation
• Fast clock-to-output time
(CE ), depth-expansion Chip Enables (CE and CE ), Burst
1
2
3
— 3.0 ns (for 250-MHz device)
Control inputs (ADSC, ADSP, and ADV), Write Enables (BW ,
X
and BWE), and Global Write (GW). Asynchronous inputs
include the Output Enable (OE) and the ZZ pin.
• Provide high-performance 3-1-1-1 access rate
®
• User selectable burst counter supporting Intel
®
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) is active. Subsequent burst
addresses can be internally generated as controlled by the
Advance pin (ADV).
Pentium interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self timed writes
• Asynchronous output enable
• Single cycle chip deselect
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle. This part supports Byte
to two or four bytes wide, as controlled by the byte write control
inputs. When it is active LOW, GW causes all bytes to be
written.
• CY7C1480V25, CY7C1482V25 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and
non-Pb-free 165-ball FBGA package. CY7C1486V25
available in Pb-free and non-Pb-free 209-ball FBGA
package
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode option
The CY7C1480V25/CY7C1482V25/CY7C1486V25 operates
from a +2.5V core power supply while all outputs may operate
with either a +2.5 or +1.8V supply. All inputs and outputs are
JEDEC-standard JESD8-5-compatible.
Selection Guide
250 MHz
3.0
200 MHz
3.0
167 MHz
3.4
Unit
ns
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
450
450
400
mA
mA
120
120
120
Note
1. For best practices recommendations, refer to the Cypress application note System Design Guidelines at www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05282 Rev. *H
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised April 23, 2007
CY7C1480V25
CY7C1482V25
CY7C1486V25
Logic Block Diagram – CY7C1486V25 (1M x 72)
ADDRESS
REGISTER
A0, A1,A
A[1:0]
MODE
Q1
Q0
ADV
CLK
BINARY
COUNTER
CLR
ADSC
ADSP
DQ
H
,
DQPH
DQ
H
,
DQPH
BW
BW
H
G
WRITE DRIVER
WRITE DRIVER
DQ
G
,
DQPG
DQ
F
,
DQPF
WRITE DRIVER
WRITE DRIVER
DQ
F
,
DQPF
DQ
F
,
DQPF
BW
BW
BW
BW
F
E
WRITE DRIVER
WRITE DRIVER
DQ
E
,
DQPE
DQ
E
,
DQPE
WRITE DRIVER
WRITE DRIVER
MEMORY
ARRAY
DQ
D
,
DQPD
DQ
D
,
DQPD
D
WRITE DRIVER
WRITE DRIVER
DQ
C
,
DQPC
DQ
C
,
DQPC
C
WRITE DRIVER
WRITE DRIVER
OUTPUT
BUFFERS
OUTPUT
REGISTERS
SENSE
AMPS
DQs
DQP
DQP
DQP
DQP
DQP
DQP
DQP
DQP
A
B
C
D
E
E
DQ
B
,
DQPB
DQ
B
,
DQPB
WRITE DRIVER
BW
BW
B
WRITE DRIVER
DQ
A
,
DQPA
DQ
A
,
DQPA
F
WRITE DRIVER
A
WRITE DRIVER
G
H
BWE
INPUT
GW
CE1
CE2
CE3
OE
REGISTERS
ENABLE
REGISTER
PIPELINED
ENABLE
SLEEP
CONTROL
ZZ
Document #: 38-05282 Rev. *H
Page 3 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Pin Configurations
100-Pin TQFP Pinout
DQPC
1
DQPB
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQB
DQB
VSSQ
VDDQ
DQB
DQB
VSS
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
NC
NC
NC
VDDQ
VSSQ
NC
A
NC
NC
VDDQ
VSSQ
NC
DQPA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
VSS
NC
1
2
3
4
5
6
7
8
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQC
2
DQc
VDDQ
VSSQ
DQC
3
4
5
6
DQC
7
NC
DQC
8
DQB
DQB
VSSQ
VDDQ
DQB
DQB
NC
VDD
NC
VSS
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQPB
NC
DQC
9
10
11
9
VSSQ
VDDQ
DQC
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
12
DQC
13
NC
14
VDD
15
NC
VDD
ZZ
CY7C1482V25
(4M x 18)
CY7C1480V25
(2M x 36)
NC
16
VDD
ZZ
VSS
17
DQD
18
DQA
DQA
VDDQ
VSSQ
DQA
DQA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
DQPA
DQA
DQA
VDDQ
VSSQ
DQA
DQA
NC
DQD
19
20
21
VDDQ
VSSQ
DQD
22
DQD
23
DQD
24
DQD
25
26
27
NC
VSSQ
VDDQ
DQD
DQD
29
VSSQ
VDDQ
NC
NC
NC
VSSQ
VDDQ
NC
NC
NC
28
DQPD
30
Document #: 38-05282 Rev. *H
Page 4 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Pin Configurations (continued)
165-Ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1480V25 (2M x 36)
1
2
3
4
5
6
7
8
9
10
A
11
NC
NC/288M
NC/144M
DQPC
A
B
C
D
CE1
BWC
BWD
VSS
VDD
BWB
BWA
VSS
VSS
CE
A
BWE
GW
VSS
ADSC
OE
ADV
ADSP
VDDQ
VDDQ
3
A
CE2
VDDQ
VDDQ
CLK
VSS
VSS
A
NC/576M
DQPB
DQB
NC
VSS
NC/1G
DQB
DQC
DQC
VSS
VDD
DQC
DQC
DQC
DQC
NC
VDDQ
VDDQ
VDDQ
NC
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
DQB
DQB
DQB
NC
DQB
E
F
DQC
DQC
NC
VSS
VSS
VSS
VSS
VSS
VSS
DQB
DQB
ZZ
G
H
J
DQD
DQD
DQD
DQD
DQD
DQD
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
DQA
DQA
DQA
DQA
DQA
DQA
K
L
DQD
DQPD
NC
DQD
NC
A
VDDQ
VDDQ
A
VDD
VSS
A
VSS
NC
VSS
A
VSS
NC
VDD
VSS
A
VDDQ
VDDQ
A
DQA
NC
A
DQA
DQPA
A
M
N
P
TDI
A1
TDO
A0
MODE
A
A
A
TMS
TCK
A
A
A
A
R
CY7C1482V25 (4M x 18)
1
2
A
3
4
5
NC
6
7
8
9
10
A
11
A
NC/288M
NC/144M
NC
A
B
C
D
BWB
NC
CE
CE1
CE2
BWE
GW
VSS
VSS
ADSC
OE
ADV
ADSP
VDDQ
VDDQ
3
A
BWA
VSS
VSS
CLK
VSS
VSS
A
NC/576M
DQPA
DQA
NC
VDDQ
VDDQ
VSS
VDD
VSS
NC/1G
NC
NC
DQB
VDD
NC
NC
DQB
DQB
DQB
NC
VDDQ
VDDQ
VDDQ
NC
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
NC
NC
DQA
DQA
DQA
ZZ
E
F
NC
NC
G
H
J
NC
NC
DQB
DQB
DQB
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
DQA
DQA
DQA
NC
NC
NC
K
L
NC
NC
DQB
DQPB
NC
NC
NC
A
VDDQ
VDDQ
A
VDD
VSS
A
VSS
NC
VSS
A
VSS
NC
VDD
VSS
A
VDDQ
VDDQ
A
DQA
NC
A
NC
NC
A
M
N
P
TDI
A1
TDO
MODE
A
A
A
TMS
A0
TCK
A
A
A
A
R
Document #: 38-05282 Rev. *H
Page 5 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Pin Configurations (continued)
209-Ball FBGA (14 x 22 x 1.76 mm) Pinout
CY7C1486V25 (1M × 72)
1
2
3
A
4
5
6
7
8
9
10
11
DQG
DQG
DQG
A
B
C
D
E
F
DQG
DQG
DQB
DQB
DQB
CE
ADSC
BWE
ADSP
ADV
A
CE
A
DQB
DQB
2
3
NC/288M
NC/144M
BWS
BWS
BWS
B
BWS
F
G
C
DQG
DQG
NC/576M
GW
BWS
NC
BWS
CE
BWS
A
BWS
DQB
DQB
E
D
1
H
DQG
V
NC/1G OE
V
NC
V
SS
DQB
SS
DQPG DQPC
V
V
V
V
V
V
DDQ
DDQ
DDQ
SS
DDQ
DD
DD
DD
DQPF DQPB
DQC
DQC
V
V
V
DQF
DQF
V
V
NC
NC
NC
NC
V
V
SS
SS
SS
SS
DD
SS
G
H
J
DQC
DQC
V
DQC
V
V
DDQ
V
V
V
DD
DDQ
DQF
DQF
DDQ
DDQ
V
V
V
V
V
V
V
DQC
DQC
NC
DQF
SS
SS
SS
SS
SS
SS
DQ
F
DQC
NC
V
V
V
V
DDQ
V
DDQ
DD
DD
DDQ
DDQ
DQF
NC
DQF
NC
K
L
CLK
V
V
V
NC
V
SS
SS
SS
NC
NC
DQH
DQH
DQH
V
V
V
NC
NC
V
DDQ
DD
SS
DD
DDQ
DDQ
DQA
DQA
DQ
A
DDQ
M
N
P
R
T
V
V
V
V
V
V
V
DQH
DQH
DQH
V
V
SS
SS
SS
SS
SS
DQA
DQA
DQA
V
V
V
DDQ
DQH
DQH
DQPD
DQD
DQD
V
V
V
V
V
NC
ZZ
V
DD
DD
DDQ
SS
DDQ
DDQ
DQA
DQA
DQPA
DQE
DQE
V
V
V
V
V
V
SS
SS
SS
SS
SS
DQPH
DQD
DQD
DQD
DQD
V
V
DDQ
SS
DD
DD
DDQ
DDQ
SS
DDQ
DD
DQPE
DQE
DQE
DQE
DQE
NC
V
NC
A
NC
NC
A
MODE
A
U
V
W
A
A
A
A
A
A
A1
A
DQD
DQD
A
A
A
DQE
DQE
TDI
TDO
TCK
A
A0
A
TMS
Document #: 38-05282 Rev. *H
Page 6 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Pin Definitions
Pin Name
I/O
Description
Address Inputs used to select one of the address locations. Sampled at the rising
A , A , A
Input-
0
1
Synchronous edge of the CLK if ADSP or ADSC is active LOW, and CE , CE , and CE are sampled
1
2
3
active. A1: A0 are fed to the two-bit counter.
Byte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes to the
Synchronous SRAM. Sampled on the rising edge of CLK.
Input-
BW ,BW ,BW ,
A
B
C
BW , BW , BW ,
D
E
F
BW , BW
G
H
GW
Input-
Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK,
Synchronous a global write is conducted (ALL bytes are written, regardless of the values on BW and
X
BWE).
BWE
CLK
Input-
Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal
Synchronous must be asserted LOW to conduct a byte write.
Input-
Clock
Clock Input. Captures all synchronous inputs to the device. Also increments the burst
counter when ADV is asserted LOW during a burst operation.
CE
CE
CE
Input-
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in
1
2
3
Synchronous conjunction with CE and CE to select/deselect the device. ADSP is ignored if CE is
2
3
1
HIGH. CE is sampled only when a new external address is loaded.
1
Input-
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in
Synchronous conjunction with CE and CE to select/deselect the device. CE is sampled only when a
1
3
2
new external address is loaded.
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in
Synchronous conjunction with CE and CE to select/deselect the device. CE is sampled only when a
Input-
1
2
3
new external address is loaded.
OE
Input-
Output Enable, asynchronous input, active LOW. Controls the direction of the IO pins.
Asynchronous When LOW, the IO pins behave as outputs. When deasserted HIGH, IO pins are tri-stated,
and act as input data pins. OE is masked during the first clock of a read cycle when
emerging from a deselected state.
ADV
Input-
Advance Input signal, sampled on the rising edge of CLK, active LOW. When
Synchronous asserted, it automatically increments the address in a burst cycle.
ADSP
Input- Address Strobe from Processor, sampled on the rising edge of CLK, active LOW.
Synchronous When asserted LOW, addresses presented to the device are captured in the address
registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both
asserted, only ADSP is recognized. ASDP is ignored when CE is deasserted HIGH.
1
ADSC
ZZ
Input-
Address Strobe from Controller, sampled on the rising edge of CLK, active LOW.
Synchronous When asserted LOW, addresses presented to the device are captured in the address
registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both
asserted, only ADSP is recognized.
Input-
ZZ “sleep” Input, active HIGH. When asserted HIGH places the device in a
Asynchronous non-time-critical “sleep” condition with data integrity preserved. For normal operation, this
pin has to be LOW or left floating. ZZ pin has an internal pull down.
I/O-
Bidirectional Data IO lines. As inputs, they feed into an on-chip data register that is
DQs, DQPs
Synchronous triggered by the rising edge of CLK. As outputs, they deliver the data contained in the
memory location specified by the addresses presented during the previous clock rise of
the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW,
the pins behave as outputs. When HIGH, DQs and DQP are placed in a tri-state condition.
X
V
V
V
V
Power Supply Power supply inputs to the core of the device.
DD
Ground
Ground for the core of the device.
Ground for the I/O circuitry.
SS
I/O Ground
SSQ
I/O Power Supply Power supply for the I/O circuitry.
DDQ
Note
2. Applicable for TQFP package. For BGA package V serves as ground for the core and the IO circuitry.
SS
Document #: 38-05282 Rev. *H
Page 7 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Pin Definitions (continued)
Pin Name
I/O
Description
Selects Burst Order. When tied to GND selects linear burst sequence. When tied to V
MODE
Input Static
DD
or left floating selects interleaved burst sequence. This is a strap pin and must remain static
during device operation. Mode pin has an internal pull up.
TDO
TDI
JTAG Serial
Output
Synchronous packages.
Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the
JTAG feature is not used, this pin must be disconnected. This pin is not available on TQFP
JTAG Serial Input Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature
Synchronous is not used, this pin can be disconnected or connected to V . This pin is not available on
DD
TQFP packages.
TMS
JTAG Serial Input Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature
Synchronous is not used, this pin can be disconnected or connected to V . This pin is not available on
DD
TQFP packages.
TCK
NC
JTAG Clock
-
Clock input to the JTAG circuitry. If the JTAG feature is not used, this pin must be
connected to V . This pin is not available on TQFP packages.
SS
No Connects. Not internally connected to the die. 144M, 288M, 576M, and 1G are address
expansion pins and are not internally connected to the die.
corresponding data is allowed to propagate to the input of the
Output Registers. At the rising edge of the next clock the data
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (t ) is 3.0 ns
(250 MHz device).
is allowed to propagate through the output register and onto
the data bus within 3.0 ns (250-MHz device) if OE is active
LOW. The only exception occurs when the SRAM is emerging
from a deselected state to a selected state, its outputs are
always tri-stated during the first cycle of the access. After the
first cycle of the access, the outputs are controlled by the OE
signal. Consecutive single read cycles are supported. After the
SRAM is deselected at clock rise by the chip select and either
ADSP or ADSC signals, its output will tri-state immediately.
CO
The CY7C1480V25/CY7C1482V25/CY7C1486V25 supports
secondary cache in systems using either a linear or inter-
leaved burst sequence. The interleaved burst order supports
Pentium and i486™ processors. The linear burst sequence is
suited for processors that use a linear burst sequence. The
burst order is user selectable, and is determined by sampling
the MODE input. Accesses can be initiated with either the
Processor Address Strobe (ADSP) or the Controller Address
Strobe (ADSC). Address advancement through the burst
sequence is controlled by the ADV input. A two-bit on-chip
wraparound burst counter captures the first address in a burst
sequence and automatically increments the address for the
rest of the burst access.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and
(2) CE , CE , CE are all asserted active. The address
1
2
3
presented to A is loaded into the address register and the
address advancement logic while being delivered to the
memory array. The write signals (GW, BWE, and BW ) and
X
ADV inputs are ignored during this first cycle.
ADSP-triggered write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQs inputs is written into the corre-
sponding address location in the memory array. If GW is HIGH,
Byte write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BW ) inputs. A Global Write
X
Enable (GW) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed write circuitry.
then the write operation is controlled by the BWE and BW
X
signals.
Three synchronous Chip Selects (CE , CE , CE ) and an
1
2
3
The CY7C1480V25/CY7C1482V25/CY7C1486V25 provides
Read/Write” on page 11. Asserting the Byte Write Enable input
asynchronous Output Enable (OE) provide easy bank
selection and output tri-state control. ADSP is ignored if CE
1
is HIGH.
(BWE) with the selected Byte Write (BW ) input, will selec-
X
Single Read Accesses
tively write to only the desired bytes. Bytes not selected during
a byte write operation remain unaltered. A synchronous
self-timed write mechanism has been provided to simplify the
write operations.
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
CE , CE , CE are all asserted active, and (3) the write signals
1
2
3
(GW, BWE) are all deasserted HIGH. ADSP is ignored if CE
Because CY7C1480V25/CY7C1482V25/CY7C1486V25 is a
common IO device, the Output Enable (OE) must be
deasserted HIGH before presenting data to the DQs inputs.
Doing so tri-states the output drivers. As a safety precaution,
1
is HIGH. The address presented to the address inputs (A) is
stored into the address advancement logic and the Address
Register while being presented to the memory array. The
Document #: 38-05282 Rev. *H
Page 8 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
DQs are automatically tri-stated whenever a write cycle is
detected, regardless of the state of OE.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CE , CE , CE , ADSP, and ADSC must
Single Write Accesses Initiated by ADSC
ADSC Write accesses are initiated when the following condi-
tions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is
deasserted HIGH, (3) CE , CE , CE are all asserted active,
1
2
3
and (4) the appropriate combination of the write inputs (GW,
BWE, and BW ) are asserted active to conduct a write to the
X
1
2
3
desired byte(s). ADSC-triggered write accesses need a single
clock cycle to complete. The address presented to A is loaded
into the address register and the address advancement logic
while being delivered to the memory array. The ADV input is
ignored during this cycle. If a global write is conducted, the
data presented to the DQs is written into the corresponding
address location in the memory core. If a byte write is
conducted, only the selected bytes are written. Bytes not
selected during a byte write operation remain unaltered. A
synchronous self-timed write mechanism has been provided
to simplify the write operations.
remain inactive for the duration of t
returns LOW.
after the ZZ input
ZZREC
Interleaved Burst Address Table
(MODE = Floating or VDD
)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Because CY7C1480V25/CY7C1482V25/CY7C1486V25 is a
common IO device, the Output Enable (OE) must be
deasserted HIGH before presenting data to the DQs inputs.
Doing so tri-states the output drivers. As a safety precaution,
DQs are automatically tri-stated whenever a write cycle is
detected, regardless of the state of OE.
Linear Burst Address Table
(MODE = GND)
Burst Sequences
First
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
The CY7C1480V25/CY7C1482V25/CY7C1486V25 provides
a two-bit wraparound counter, fed by A1: A0, that implements
either an interleaved or linear burst sequence. The interleaved
burst sequence is designed specifically to support Intel
Pentium applications. The linear burst sequence is designed
to support processors that follow a linear burst sequence. The
burst sequence is user selectable through the MODE input.
Address
A1: A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
Asserting ADV LOW at clock rise automatically increments the
burst counter to the next address in the burst sequence. Both
Read and Write burst operations are supported.
ZZ Mode Electrical Characteristics
Parameter
Description
Sleep Mode Standby Current
Device Operation to ZZ
Test Conditions
ZZ > V – 0.2V
Min.
Max.
120
Unit
mA
ns
I
t
t
t
t
DDZZ
DD
ZZ > V – 0.2V
2t
ZZS
DD
CYC
ZZ Recovery Time
ZZ < 0.2V
2t
ns
ZZREC
ZZI
CYC
ZZ Active to Sleep Current
ZZ Inactive to Exit Sleep Current
This parameter is sampled
This parameter is sampled
2t
ns
CYC
0
ns
RZZI
Document #: 38-05282 Rev. *H
Page 9 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Truth Table
The truth table for CY7C1480V25, CY7C1482V25, and CY7C1486V25 follows.
Operation
Add. Used CE
CE
X
L
CE ZZ ADSP ADSC ADV WRITE OE CLK
DQ
1
2
3
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Sleep Mode, Power Down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
None
None
H
L
X
X
H
X
H
X
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
L
L
X
X
L
X
X
X
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
L
L-H Tri-State
L-H Tri-State
L-H Tri-State
L-H Tri-State
L-H Tri-State
None
L
X
L
L
None
L
H
H
X
L
None
L
X
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
L
None
X
L
X
X
X
L
X
Tri-State
Q
External
External
External
External
External
Next
L-H
L
L
L
H
X
L
L-H Tri-State
L
L
H
H
H
H
H
X
X
H
X
H
H
X
X
H
X
L-H
L-H
D
Q
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
L
L
L
H
H
H
H
H
H
L
L
L
L
H
L
L-H Tri-State
L-H
L-H Tri-State
L-H
L-H Tri-State
X
X
H
H
X
H
X
X
H
H
X
H
X
X
X
X
X
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
H
H
Q
Next
L
H
L
Next
L
Q
Next
L
H
X
X
L
Next
L
L-H
L-H
L-H
D
D
Q
Next
L
L
Current
Current
Current
Current
Current
Current
H
H
H
H
H
H
H
H
H
H
L
H
L
L-H Tri-State
L-H
L-H Tri-State
Q
H
X
X
L-H
L-H
D
D
L
Notes
3. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
4. WRITE = L when any one or more Byte Write Enable signals and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals, BWE, GW = H.
5. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
6. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW . Writes may occur only on subsequent clocks
X
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH before the start of the write cycle to enable the outputs to tri-state. OE is a
don't care for the remainder of the write cycle
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Document #: 38-05282 Rev. *H
Page 10 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Truth Table for Read/Write
The read/write truth table for the CY7C1480V25 follows.
[5]
Function
GW
BWE
BW
BW
BW
BW
A
D
C
B
Read
Read
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
X
H
H
H
H
H
H
H
H
L
X
H
H
H
H
L
X
H
H
L
X
H
L
Write Byte A – (DQ and DQP )
A
A
Write Byte B – (DQ and DQP )
H
L
B
B
Write Bytes B, A
Write Byte C – (DQ and DQP )
L
H
H
L
H
L
C
C
Write Bytes C, A
Write Bytes C, B
Write Bytes C, B, A
L
L
H
L
L
L
Write Byte D – (DQ and DQP )
H
H
H
H
L
H
H
L
H
L
D
D
Write Bytes D, A
Write Bytes D, B
Write Bytes D, B, A
Write Bytes D, C
L
L
H
L
L
L
L
H
H
L
H
L
Write Bytes D, C, A
Write Bytes D, C, B
Write All Bytes
L
L
L
L
H
L
L
L
L
Write All Bytes
X
X
X
X
Truth Table for Read/Write
The read/write truth table for the CY7C1482V25 follows.
[5]
Function
GW
BWE
BW
BW
A
B
Read
Read
H
H
H
H
H
H
L
H
L
L
L
L
L
X
X
H
H
L
X
H
L
Write Byte A – (DQ and DQP )
A
A
Write Byte B – (DQ and DQP )
H
L
B
B
Write Bytes B, A
Write All Bytes
Write All Bytes
L
L
L
X
X
Truth Table for Read/Write
The read/write truth table for the CY7C1486V25 follows.
[8]
Function
GW
BWE
BW
X
Read
H
H
H
H
L
H
L
L
L
X
X
Read
All BW = H
Write Byte x – (DQx and DQPx)
Write All Bytes
L
All BW = L
X
Write All Bytes
Note
8. BWx represents any byte write signal BW[0..7]. To enable any byte write BWx, a Logic LOW signal must be applied at clock rise. Any number of byte writes can
be enabled at the same time for any given write.
Document #: 38-05282 Rev. *H
Page 11 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Test Mode Select (TMS)
IEEE 1149.1 Serial Boundary Scan (JTAG)
The TMS input gives commands to the TAP controller and is
sampled on the rising edge of TCK. You can leave this ball
unconnected if the TAP is not used. The ball is pulled up inter-
nally, resulting in a logic HIGH level.
The CY7C1480V25/CY7C1482V25/CY7C1486V25 incorpo-
rates a serial boundary scan test access port (TAP). This port
operates in accordance with IEEE Standard 1149.1-1990 but
does not have the set of functions required for full 1149.1
compliance. These functions from the IEEE specification are
excluded because their inclusion places an added delay in the
critical speed path of the SRAM. Note that the TAP controller
functions in a manner that does not conflict with the operation
of other devices using 1149.1 fully compliant TAPs. The TAP
operates using JEDEC-standard 2.5V or 1.8V I/O logic levels.
Test Data-In (TDI)
The TDI ball serially inputs information into the registers and
can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction
that is loaded into the TAP instruction register. For information
on loading the instruction register, see the TAP Controller
State Diagram. TDI is internally pulled up and can be uncon-
nected if the TAP is unused in an application. TDI is connected
to the most significant bit (MSB) of any register. (See TAP
The CY7C1480V25/CY7C1482V25/CY7C1486V25 contains
a TAP controller, instruction register, boundary scan register,
bypass register, and ID register.
Disabling the JTAG Feature
Test Data-Out (TDO)
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
The TDO output ball is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine. The output changes on the
falling edge of TCK. TDO is connected to the least significant
(V ) to prevent device clocking. TDI and TMS are internally
SS
pulled up and may be unconnected. They may alternatively be
connected to V through a pull up resistor. TDO must be left
DD
unconnected. At power up, the device comes up in a reset
state, which does not interfere with the operation of the device.
TAP Controller Block Diagram
TAP Controller State Diagram
0
TEST-LOGIC
1
RESET
0
Bypass Register
2
1
0
0
0
1
1
1
RUN-TEST/
IDLE
SELECT
DR-SCAN
SELECT
IR-SCAN
0
Selection
Circuitry
Selection
Circuitry
Instruction Register
31 30 29
Identification Register
0
0
TDI
TDO
1
1
.
.
.
2
1
CAPTURE-DR
CAPTURE-IR
0
0
x
.
.
.
.
.
2
1
SHIFT-DR
0
SHIFT-IR
0
Boundary Scan Register
1
1
1
1
EXIT1-DR
EXIT1-IR
0
0
PAUSE-DR
0
PAUSE-IR
1
0
TCK
TAP CONTROLLER
TM S
1
0
0
EXIT2-DR
1
EXIT2-IR
1
Performing a TAP Reset
UPDATE-DR
UPDATE-IR
Perform a RESET by forcing TMS HIGH (V ) for five rising
DD
1
0
1
0
edges of TCK. This RESET does not affect the operation of
the SRAM and may be performed while the SRAM is
operating.
At power up, the TAP is reset internally to ensure that TDO
comes up in a High-Z state.
The 0/1 next to each state represents the value of TMS at the
rising edge of TCK.
TAP Registers
Test Access Port (TAP)
Registers are connected between the TDI and TDO balls and
enable data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction register. Data is serially loaded into the TDI ball
on the rising edge of TCK. Data is output on the TDO ball on
the falling edge of TCK.
Test Clock (TCK)
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
Document #: 38-05282 Rev. *H
Page 12 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Instruction Register
SAMPLE/PRELOAD; rather, it performs a capture of the IO
ring when these instructions are executed.
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
TDI and TDO balls as shown in the “TAP Controller Block
Diagram” on page 12. At power up, the instruction register is
loaded with the IDCODE instruction. It is also loaded with the
IDCODE instruction if the controller is placed in a reset state,
as described in the previous section.
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO balls.
To execute the instruction after it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
When the TAP controller is in the Capture-IR state, the two
least significant bits are loaded with a binary “01” pattern to
enable fault isolation of the board-level serial test data path.
EXTEST
EXTEST is a mandatory 1149.1 instruction that is to be
executed whenever the instruction register is loaded with all
0s. EXTEST is not implemented in this SRAM TAP controller,
and therefore this device is not compliant to 1149.1. The TAP
controller does recognize an all-0 instruction.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between the
TDI and TDO balls. This enables data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
When an EXTEST instruction is loaded into the instruction
register, the SRAM responds as if a SAMPLE/PRELOAD
instruction has been loaded. There is one difference between
the two instructions. Unlike the SAMPLE/PRELOAD
instruction, EXTEST places the SRAM outputs in a High-Z
state.
(V ) when the BYPASS instruction is executed.
SS
Boundary Scan Register
The boundary scan register is connected to all the input and
bidirectional balls on the SRAM. The x36 configuration has a
IDCODE
73-bit-long register, and the x18 configuration has
54-bit-long register.
a
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO balls and
enables the IDCODE to be shifted out of the device when the
TAP controller enters the Shift-DR state.
The boundary scan register is loaded with the contents of the
RAM IO ring when the TAP controller is in the Capture-DR
state and is then placed between the TDI and TDO balls when
the controller moves to the Shift-DR state. The EXTEST,
SAMPLE/PRELOAD, and SAMPLE Z instructions can be used
to capture the contents of the IO ring.
The IDCODE instruction is loaded into the instruction register
at power up or whenever the TAP controller is in a test logic
reset state.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI and the LSB is connected to TDO.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO balls when the TAP
controller is in a Shift-DR state. It also places all SRAM outputs
into a High-Z state.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in “Identification Register Defini-
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The
PRELOAD portion of this instruction is not implemented, so
the device TAP controller is not fully 1149.1 compliant.
When the SAMPLE/PRELOAD instruction is loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and bidirectional balls
is captured in the boundary scan register.
TAP Instruction Set
Overview
Be aware that the TAP controller clock can only operate at a
frequency up to 10 MHz, while the SRAM clock operates more
than an order of magnitude faster. Because there is a large
difference in the clock frequencies, it is possible that during the
Capture-DR state, an input or output may undergo a transition.
The TAP may then try to capture a signal while in transition
(metastable state). This does not harm the device, but there is
no guarantee as to the value that may be captured.
Repeatable results may not be possible.
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in “Identification
Codes” on page 16. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in detail below.
The TAP controller used in this SRAM is not fully compliant to
the 1149.1 convention because some of the mandatory 1149.1
instructions are not fully implemented.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture setup plus
The TAP controller cannot be used to load address data or
control signals into the SRAM and cannot preload the IO
buffers. The SRAM does not implement the 1149.1 commands
EXTEST or INTEST or the PRELOAD portion of
hold time (t plus t ).
CS
CH
Document #: 38-05282 Rev. *H
Page 13 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
The SRAM clock input might not be captured correctly if there
is no way in a design to stop (or slow) the clock during a
SAMPLE/PRELOAD instruction. If this is an issue, it is still
possible to capture all other signals and simply ignore the
value of the CLK captured in the boundary scan register.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO balls. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO balls.
Reserved
Note that because the PRELOAD part of the command is not
implemented, putting the TAP to the Update-DR state while
performing a SAMPLE/PRELOAD instruction has the same
effect as the Pause-DR command.
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
TAP Timing
1
2
3
4
5
6
Test Clock
(TCK)
t
t
t
TH
CYC
TL
t
t
t
t
TMSS
TDIS
TMSH
Test Mode Select
(TMS)
TDIH
Test Data-In
(TDI)
t
TDOV
t
TDOX
Test Data-Out
(TDO)
DON’T CARE
UNDEFINED
TAP AC Switching Characteristics Over the Operating Range
Parameter
Clock
Description
Min
Max
Unit
t
t
t
t
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH time
TCK Clock LOW time
50
ns
MHz
ns
TCYC
TF
20
20
20
TH
ns
TL
Output Times
t
t
TCK Clock LOW to TDO Valid
10
ns
ns
TDOV
TDOX
TCK Clock LOW to TDO Invalid
0
Setup Times
t
t
t
TMS Setup to TCK Clock Rise
TDI Setup to TCK Clock Rise
Capture Setup to TCK Rise
5
5
5
ns
ns
ns
TMSS
TDIS
CS
Hold Times
t
t
t
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
5
5
5
ns
ns
ns
TMSH
TDIH
CH
Capture Hold after Clock Rise
Notes
9.
10. Test conditions are specified using the load in TAP AC Test Conditions. t /t = 1 ns.
t
and t refer to the setup and hold time requirements of latching data from the boundary scan register.
CH
CS
R
F
Document #: 38-05282 Rev. *H
Page 14 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
2.5V TAP AC Test Conditions
1.8V TAP AC Test Conditions
Input pulse levels ................................................ V to 2.5V
Input pulse levels..................................... 0.2V to V
– 0.2
SS
DDQ
Input rise and fall time..................................................... 1 ns
Input timing reference levels.........................................1.25V
Output reference levels.................................................1.25V
Test load termination supply voltage.............................1.25V
Input rise and fall time .....................................................1 ns
Input timing reference levels........................................... 0.9V
Output reference levels .................................................. 0.9V
Test load termination supply voltage .............................. 0.9V
2.5V TAP AC Output Load Equivalent
1.8V TAP AC Output Load Equivalent
1.25V
0.9V
50Ω
50Ω
TDO
TDO
ZO= 50Ω
ZO= 50Ω
20pF
20pF
TAP DC Electrical Characteristics And Operating Conditions
(0°C < T < +70°C; V = 2.5V ±0.125V unless otherwise noted)
A
DD
Parameter
Description
Test Conditions
Min
1.7
2.1
1.6
Max
Unit
V
V
V
Output HIGH Voltage
Output HIGH Voltage
I
I
= –1.0 mA
V
V
V
V
V
V
V
V
V
V
= 2.5V
= 2.5V
= 1.8V
= 2.5V
= 2.5V
= 1.8V
= 2.5V
= 1.8V
= 2.5V
= 1.8V
OH1
OH
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
= –100 µA
V
OH2
OH
V
V
V
Output LOW Voltage
Output LOW Voltage
I
I
= 1.0 mA
0.4
0.2
0.2
V
OL1
OL
OL
= 100 µA
V
OL2
V
V
V
I
Input HIGH Voltage
Input LOW Voltage
Input Load Current
1.7
1.26
–0.3
–0.3
–5
V
V
+ 0.3
V
IH
DD
DD
+ 0.3
V
0.7
V
IL
0.36
5
V
GND ≤ V ≤ V
DDQ
µA
X
I
Identification Register Definitions
CY7C1480V25
Instruction Field
CY7C1482V25
(4M x 18)
CY7C1486V25
(1M x72)
Description
(2M x36)
Revision Number (31:29)
Device Depth (28:24)
000
000
000
Describes the version number
Reserved for internal use
01011
000000
01011
000000
01011
000000
Architecture/Memory
Type(23:18)
Defines memory type and
architecture
Bus Width/Density(17:12)
100100
010100
110100
Defines width and density
Cypress JEDEC ID Code
(11:1)
00000110100
00000110100
00000110100
Enables unique identification
of SRAM vendor
ID Register Presence
Indicator (0)
1
1
1
Indicates the presence of an
ID register
Note
11. All voltages referenced to V (GND).
SS
Document #: 38-05282 Rev. *H
Page 15 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Scan Register Sizes
Register Name
Bit Size (x36)
Bit Size (x18)
Bit Size (x72)
Instruction
3
1
3
1
3
1
Bypass
ID
32
73
-
32
54
-
32
-
Boundary Scan Order – 165FBGA
Boundary Scan Order – 209BGA
112
Identification Codes
Instruction
EXTEST
Code
000
Description
Captures the IO ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and
TDO. This operation does not affect SRAM operations.
SAMPLE Z
010
Captures the IO ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
RESERVED
011
100
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
Captures the IO ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation.
RESERVED
RESERVED
BYPASS
101
110
111
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
Boundary Scan Exit Order (2M x 36)
Bit #
1
165-Ball ID
C1
Bit #
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
165-Ball ID
R3
Bit #
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
165-Ball ID
L10
K11
J11
Bit #
61
62
63
64
65
66
67
68
69
70
71
72
73
165-Ball ID
B8
A7
B7
B6
A6
B5
A5
A4
B4
B3
A3
A2
B2
2
D1
P2
3
E1
R4
4
D2
P6
K10
J10
5
E2
R6
6
F1
N6
H11
G11
F11
7
G1
F2
P11
R8
8
9
G2
J1
P3
E11
D10
D11
C11
G10
F10
E10
A10
B10
A9
10
11
12
13
14
15
16
17
18
19
20
P4
K1
P8
L1
P9
J2
P10
R9
M1
N1
R10
R11
N11
M11
L11
M10
K2
L2
M2
R1
B9
R2
A8
Document #: 38-05282 Rev. *H
Page 16 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Boundary Scan Exit Order (4M x 18)
Bit #
1
165-Ball ID
D2
Bit #
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
165-Ball ID
R8
Bit #
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
165-Ball ID
C11
A11
A10
B10
A9
2
E2
P3
3
F2
P4
4
G2
P8
5
J1
P9
6
K1
P10
R9
B9
7
L1
A8
8
M1
N1
R10
R11
M10
L10
K10
J10
H11
G11
F11
E11
D11
B8
9
A7
10
11
12
13
14
15
16
17
18
R1
B7
R2
B6
R3
A6
P2
B5
R4
A4
P6
B3
R6
A3
N6
A2
P11
B2
Document #: 38-05282 Rev. *H
Page 17 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Boundary Scan Exit Order (1M x 72)
Bit #
1
209-Ball ID
A1
Bit #
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
209-Ball ID
T1
Bit #
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
209-Ball ID
V10
U11
U10
T11
Bit #
85
209-Ball ID
C11
C10
B11
B10
A11
A10
A9
2
A2
T2
86
3
B1
U1
87
4
B2
U2
88
5
C1
C2
D1
D2
E1
V1
T10
R11
R10
P11
P10
N11
N10
M11
M10
L11
89
6
V2
90
7
W1
W2
T6
91
8
92
U8
9
93
A7
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
E2
V3
94
A5
F1
V4
95
A6
F2
U4
96
D6
G1
G2
H1
H2
J1
W5
V6
97
B6
98
D7
W6
U3
L10
99
K3
P6
100
101
102
103
104
105
106
107
108
109
110
111
112
A8
U9
J11
B4
J2
V5
J10
B3
L1
U5
H11
H10
G11
G10
F11
C3
L2
U6
C4
M1
M2
N1
N2
P1
W7
V7
C8
C9
U7
B9
V8
F10
E10
E11
D11
D10
B8
V9
A4
P2
W11
W10
V11
C6
R2
R1
B7
A3
Document #: 38-05282 Rev. *H
Page 18 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
DC Input Voltage ................................... –0.5V to V + 0.5V
Maximum Ratings
DD
Current into Outputs (LOW)......................................... 20 mA
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Static Discharge Voltage........................................... >2001V
(MIL-STD-883, Method 3015)
Storage Temperature .................................–65°C to +150°C
Latch Up Current .................................................... >200 mA
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Operating Range
Supply Voltage on V Relative to GND........ –0.3V to +3.6V
DD
Ambient
Range
V
V
DDQ
DD
Supply Voltage on V
Relative to GND ......–0.3V to +V
Temperature
DDQ
DD
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V
Commercial 0°C to +70°C
2.5V –5%/+5%
1.7V to
+ 0.5V
V
DDQ
DD
Industrial
–40°C to +85°C
Electrical Characteristics Over the Operating Range
Parameter
Description
Power Supply Voltage
IO Supply Voltage
Test Conditions
Min
2.375
2.375
1.7
Max
2.625
Unit
V
V
V
DD
V
V
V
V
V
I
for 2.5V IO
for 1.8V IO
V
DD
DDQ
1.9
V
Output HIGH Voltage
Output LOW Voltage
for 2.5V IO, I = –1.0 mA
2.0
V
OH
OL
IH
OH
for 1.8V IO, I = –100 µA
1.6
V
OH
for 2.5V IO, I = 1.0 mA
0.4
0.2
V
OL
for 1.8V IO, I = 100 µA
V
OL
Input HIGH Voltage
for 2.5V IO
for 1.8V IO
for 2.5V IO
for 1.8V IO
1.7
1.26
–0.3
–0.3
–5
V
V
+ 0.3V
+ 0.3V
0.7
V
DD
DD
V
Input LOW Voltage
V
IL
0.36
5
V
Input Leakage Current GND ≤ V ≤ V
except ZZ and MODE
µA
X
I
DDQ
Input Current of MODE Input = V
–30
–5
µA
µA
SS
Input = V
5
DD
Input Current of ZZ
Input = V
Input = V
µA
SS
DD
30
5
µA
I
I
Output Leakage Current GND ≤ V ≤ V
Output Disabled
–5
µA
OZ
I
DDQ,
V
Operating Supply
V
f = f
= Max., I
= 0 mA,
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speeds
450
450
400
200
200
200
120
mA
mA
mA
mA
mA
mA
mA
DD
DD
DD
OUT
CYC
Current
= 1/t
MAX
I
Automatic CE
Power Down
Current—TTL Inputs
V = Max, Device Deselected,
DD
SB1
V
≥ V or V ≤ V
IN
IH
IN
IL
f = f
= 1/t
MAX CYC
I
I
Automatic CE
Power Down
Current—CMOS Inputs f = 0
V = Max, Device Deselected,
DD
SB2
V
≤ 0.3V or V > V – 0.3V,
IN
IN
DDQ
Automatic CE
Power Down
Current—CMOS Inputs f = f
V
V
= Max, Device Deselected, or 4.0-ns cycle, 250 MHz
200
200
200
135
mA
mA
mA
mA
SB3
DD
≤ 0.3V or V > V
– 0.3V
IN
IN
DDQ
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speeds
= 1/t
MAX
CYC
I
Automatic CE
V = Max, Device Deselected,
DD
SB4
Power Down
Current—TTL Inputs
V
≥ V or V ≤ V , f = 0
IN
IH IN IL
Notes
12. Overshoot: V (AC) < V +1.5V (Pulse width less than t
/2), undershoot: V (AC) > –2V (Pulse width less than t /2).
CYC
IH
DD
CYC
IL
13. Power up: Assumes a linear ramp from 0V to V (min.) within 200 ms. During this time V < V and V
< V
.
DD
IH
DD
DDQ
DD
Document #: 38-05282 Rev. *H
Page 19 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Capacitance[14]
100 TQFP 165 FBGA 209 FBGA
Parameter
Description
Test Conditions
Unit
Package
Package
Package
C
C
C
C
C
Address Input Capacitance
Data Input Capacitance
Control Input Capacitance
Clock Input Capacitance
Input/Output Capacitance
T = 25°C, f = 1 MHz,
6
5
8
6
5
6
5
8
6
5
6
5
8
6
5
pF
pF
pF
pF
pF
ADDRESS
DATA
CTRL
CLK
A
V
= 2.5V
= 2.5V
DD
V
DDQ
I/O
Thermal Resistance[14]
100 TQFP
Max.
165 FBGA 209 FBGA
Parameter
Description
Test Conditions
Unit
Max.
Max.
Θ
Thermal Resistance
(Junction to Ambient)
Test conditions follow
standard test methods and
procedures for measuring
thermal impedance, per
EIA/JESD51.
24.63
16.3
15.2
°C/W
JA
Θ
Thermal Resistance
(Junction to Case)
2.28
2.1
1.7
°C/W
JC
AC Test Loads and Waveforms
2.5V I/O Test Load
R = 1667Ω
2.5V
OUTPUT
OUTPUT
ALL INPUT PULSES
90%
VDDQ
90%
10%
Z = 50Ω
0
R = 50Ω
10%
L
GND
5 pF
R = 1583Ω
≤ 1 ns
≤ 1 ns
V = 1.25V
L
INCLUDING
JIG AND
SCOPE
(c)
(a)
(b)
1.8V I/O Test Load
R = 14KΩ
1.8V
OUTPUT
R = 50Ω
OUTPUT
ALL INPUT PULSES
90%
VDDQ-0.2
0.2
90%
10%
Z = 50Ω
0
10%
L
5 pF
R = 14KΩ
≤ 1 ns
≤ 1 ns
V = 0.9V
L
INCLUDING
JIG AND
SCOPE
(c)
(a)
(b)
Note
14. Tested initially and after any design or process change that may affect these parameters.
Document #: 38-05282 Rev. *H
Page 20 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Switching Characteristics Over the Operating Range
250 MHz
200 MHz
167 MHz
Unit
Parameter
Description
Min. Max. Min. Max. Min. Max.
t
V
(Typical) to the first access
1
1
1
ms
POWER
DD
Clock
t
t
t
Clock Cycle Time
Clock HIGH
4.0
2.0
2.0
5.0
2.0
2.0
6.0
2.4
2.4
ns
ns
ns
CYC
CH
Clock LOW
CL
Output Times
t
t
t
t
t
t
t
Data Output Valid After CLK Rise
Data Output Hold After CLK Rise
3.0
3.0
3.4
ns
ns
ns
ns
ns
ns
ns
CO
1.3
1.3
1.3
1.3
1.5
1.5
DOH
CLZ
Clock to Low-Z
Clock to High-Z
3.0
3.0
3.0
3.0
3.4
3.4
CHZ
OEV
OELZ
OEHZ
OE LOW to Output Valid
OE LOW to Output Low-Z
0
0
0
OE HIGH to Output High-Z
3.0
3.0
3.4
Setup Times
t
t
t
t
t
t
Address Setup Before CLK Rise
ADSC, ADSP Setup Before CLK Rise
ADV Setup Before CLK Rise
1.4
1.4
1.4
1.4
1.4
1.4
1.4
1.4
1.4
1.4
1.4
1.4
1.5
1.5
1.5
1.5
1.5
1.5
ns
ns
ns
ns
ns
ns
AS
ADS
ADVS
WES
DS
GW, BWE, BW Setup Before CLK Rise
X
Data Input Setup Before CLK Rise
Chip Enable Setup Before CLK Rise
CES
Hold Times
t
t
t
t
t
t
Address Hold After CLK Rise
ADSP, ADSC Hold After CLK Rise
ADV Hold After CLK Rise
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.5
0.5
0.5
0.5
0.5
0.5
ns
ns
ns
ns
ns
ns
AH
ADH
ADVH
WEH
DH
GW, BWE, BW Hold After CLK Rise
X
Data Input Hold After CLK Rise
Chip Enable Hold After CLK Rise
CEH
Notes
15. Timing reference level is 1.25V when V
= 2.5V and is 0.9V when V
= 1.8V.
DDQ
DDQ
16. Test conditions shown in (a) of “AC Test Loads and Waveforms” on page 20 unless otherwise noted.
17. This part has a voltage regulator internally; t
is the time that the power needs to be supplied above V (minimum) initially before a read or write operation
POWER
DD
can be initiated.
18. t
, t
, t
, and t
are specified with AC test conditions shown in part (b) of AC Test Loads and Waveforms. Transition is measured ±200 mV from
CHZ CLZ OELZ
OEHZ
steady-state voltage.
19. At any possible voltage and temperature, t
is less than t
and t
is less than t
to eliminate bus contention between SRAMs when sharing the same
CLZ
OEHZ
OELZ
CHZ
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z before Low-Z under the same system conditions.
20. This parameter is sampled and not 100% tested.
Document #: 38-05282 Rev. *H
Page 21 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Switching Waveforms
Read Cycle Timing
t
CYC
CLK
t
t
CL
CH
t
t
ADH
ADS
ADSP
ADSC
t
t
ADH
ADS
t
t
AH
AS
A1
A2
A3
ADDRESS
Burst continued with
new base address
t
t
WEH
WES
GW, BWE,
BWx
Deselect
cycle
t
t
CEH
CES
CE
t
t
ADVH
ADVS
ADV
OE
ADV
suspends
burst.
t
t
OEV
CO
t
t
OEHZ
t
t
CHZ
OELZ
DOH
t
CLZ
t
Q(A2)
Q(A2
+
1)
Q(A2
+
2)
Q(A2
+
3)
Q(A2)
Q(A2
+
1)
Q(A1)
Data Out (Q)
High-Z
CO
Burst wraps around
to its initial state
Single READ
BURST READ
DON’T CARE
UNDEFINED
Note
21. On this diagram, when CE is LOW: CE is LOW, CE is HIGH and CE is LOW. When CE is HIGH: CE is HIGH or CE is LOW or CE is HIGH.
1
2
3
1
2
3
Document #: 38-05282 Rev. *H
Page 22 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Switching Waveforms (continued)
Write Cycle Timing
t
CYC
CLK
t
t
CL
CH
t
t
ADH
ADS
ADSP
ADSC extends burst
t
t
ADH
ADS
t
t
ADH
ADS
ADSC
ADDRESS
BWE,
t
t
AH
AS
A1
A2
A3
Byte write signals are
ignored for first cycle when
ADSP initiates burst
t
t
WEH
WES
BW
X
t
t
WEH
WES
GW
t
t
CEH
CES
CE
t
t
ADVH
ADVS
ADV
OE
ADV suspends burst
t
t
DH
DS
Data In (D)
D(A2)
D(A2
+
1)
D(A2
+
1)
D(A2
+
2)
D(A2
+
3)
D(A3)
D(A3
+
1)
D(A3
+
2)
D(A1)
High-Z
t
OEHZ
Data Out (Q)
BURST READ
Single WRITE
BURST WRITE
Extended BURST WRITE
DON’T CARE
UNDEFINED
Note
22. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BW LOW.
X
Document #: 38-05282 Rev. *H
Page 23 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Switching Waveforms (continued)
Read/Write Cycle Timing
t
CYC
CLK
t
t
CL
CH
t
t
ADH
ADS
ADSP
ADSC
t
t
AH
AS
A1
A2
A3
A4
A5
A6
ADDRESS
BWE, BW
t
t
WEH
WES
X
t
t
CEH
CES
CE
ADV
OE
t
t
DH
t
CO
DS
t
OELZ
Data In (D)
High-Z
High-Z
D(A3)
D(A5)
D(A6)
t
t
OEHZ
CLZ
Data Out (Q)
Q(A1)
Q(A2)
Q(A4)
Q(A4+1)
Q(A4+2)
Q(A4+3)
Back-to-Back READs
Single WRITE
BURST READ
Back-to-Back
WRITEs
DON’T CARE
UNDEFINED
Notes
23. The data bus (Q) remains in high-Z following a write cycle, unless a new read access is initiated by ADSP or ADSC.
24. GW is HIGH.
Document #: 38-05282 Rev. *H
Page 24 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Switching Waveforms (continued)
ZZ Mode Timing
CLK
t
t
ZZ
ZZREC
ZZ
t
ZZI
I
SUPPLY
I
DDZZ
t
RZZI
ALL INPUTS
(except ZZ)
DESELECT or READ Only
Outputs (Q)
High-Z
DON’T CARE
Notes
25. Device must be deselected when entering ZZ mode. See “Truth Table” on page 10 for all possible signal conditions to deselect the device.
26. DQs are in high-Z when exiting ZZ sleep mode.
Document #: 38-05282 Rev. *H
Page 25 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
Speed
(MHz)
Package
Diagram
Operating
Range
Part and Package Type
Ordering Code
167 CY7C1480V25-167AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
CY7C1482V25-167AXC
Commercial
CY7C1480V25-167BZC
CY7C1482V25-167BZC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1480V25-167BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1482V25-167BZXC
CY7C1486V25-167BGC 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
CY7C1486V25-167BGXC
CY7C1480V25-167AXI
CY7C1482V25-167AXI
CY7C1480V25-167BZI
CY7C1482V25-167BZI
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
lndustrial
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1480V25-167BZXI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1482V25-167BZXI
CY7C1486V25-167BGI
CY7C1486V25-167BGXI
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free
200 CY7C1480V25-200AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
CY7C1482V25-200AXC
Commercial
CY7C1480V25-200BZC
CY7C1482V25-200BZC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1480V25-200BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1482V25-200BZXC
CY7C1486V25-200BGC 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
CY7C1486V25-200BGXC
CY7C1480V25-200AXI
CY7C1482V25-200AXI
CY7C1480V25-200BZI
CY7C1482V25-200BZI
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
lndustrial
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1480V25-200BZXI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1482V25-200BZXI
CY7C1486V25-200BGI
CY7C1486V25-200BGXI
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free
Document #: 38-05282 Rev. *H
Page 26 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
Speed
(MHz)
Package
Diagram
Operating
Range
Part and Package Type
Ordering Code
250 CY7C1480V25-250AXC 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
CY7C1482V25-250AXC
Commercial
CY7C1480V25-250BZC
CY7C1482V25-250BZC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1480V25-250BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1482V25-250BZXC
CY7C1486V25-250BGC 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
CY7C1486V25-250BGXC
CY7C1480V25-250AXI
CY7C1482V25-250AXI
CY7C1480V25-250BZI
CY7C1482V25-250BZI
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Industrial
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1480V25-250BZXI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1482V25-250BZXI
CY7C1486V25-250BGI
CY7C1486V25-250BGXI
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
Document #: 38-05282 Rev. *H
Page 27 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Package Diagrams
Figure 1. 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm), 51-85050
16.00 0.20
14.00 0.10
1.40 0.05
100
81
80
1
0.30 0.08
0.65
TYP.
12° 1°
(8X)
SEE DETAIL
A
30
51
31
50
0.20 MAX.
1.60 MAX.
R 0.08 MIN.
0.20 MAX.
0° MIN.
SEATING PLANE
STAND-OFF
0.05 MIN.
0.15 MAX.
NOTE:
1. JEDEC STD REF MS-026
0.25
GAUGE PLANE
2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH
MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE
R 0.08 MIN.
0.20 MAX.
BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH
3. DIMENSIONS IN MILLIMETERS
0°-7°
0.60 0.15
0.20 MIN.
1.00 REF.
51-85050-*B
DETAIL
A
Document #: 38-05282 Rev. *H
Page 28 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Package Diagrams (continued)
Figure 2. 165-Ball FBGA (15 x 17 x 1.4 mm), 51-85165
PIN 1 CORNER
BOTTOM VIEW
TOP VIEW
Ø0.05 M C
PIN 1 CORNER
1
Ø0.25 M C A B
Ø0.45 0.05(165X)
2
3
4
5
6
7
8
9
10
11
11 10
9
8
7
6
5
4
3
2
1
A
B
A
B
C
D
C
D
E
E
F
F
G
G
H
J
H
J
K
K
L
L
M
M
N
P
R
N
P
R
A
1.00
5.00
10.00
B
15.00 0.10
0.15(4X)
SEATING PLANE
C
51-85165-*A
Document #: 38-05282 Rev. *H
Page 29 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Package Diagrams (continued)
Figure 3. 209-Ball FBGA (14 x 22 x 1.76 mm), 51-85167
51-85167-**
i486 is a trademark and Intel and Pentium are registered trademarks of Intel Corporation. All products and company names
mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05282 Rev. *H
Page 30 of 32
© Cypress Semiconductor Corporation, 2002-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the
use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to
be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C1480V25
CY7C1482V25
CY7C1486V25
Document History Page
Document Title: CY7C1480V25/CY7C1482V25/CY7C1486V25 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
Document Number: 38-05282
Orig. of
Change
REV.
ECN NO. Issue Date
Description of Change
**
114670
118281
08/06/02
01/21/03
PKS
New Data Sheet
*A
HGK
Changed t from 2.4 to 2.6 ns for 250 MHz
CO
Updated features on page 1 for package offering
Removed 300 MHz offering
Updated Ordering Information
Changed Advanced Information to Preliminary
*B
233368 See ECN
NJY
Changed timing diagrams
Changed logic block diagrams
Modified Functional Description
Modified “Functional Overview” section
Added boundary scan order for all packages
Included thermal numbers and capacitance values for all packages
Included IDD and ISB values
Removed 250-MHz speed grade offering and included 225 MHz speed bin
Changed package outline for 165FBGA package and 209-ball BGA package
Removed 119-BGA package offering
*C
*D
299452 See ECN
SYT
Removed 225-MHz offering and included 250-MHz speed bin
Changed t
from 4.4 ns to 4.0 ns for 250-MHz Speed Bin
CYC
Changed Θ from 16.8 to 24.63 °C/W and Θ from 3.3 to 2.28 °C/W for 100
JA
JC
TQFP Package on Page # 20
Added lead-free information for 100-Pin TQFP, 165 FBGA and 209 BGA
Packages
Added comment of ‘Lead-free BG packages availability’ below the Ordering
Information
323039 See ECN
PCI
Unshaded 200 and 167 MHz speed bin in the AC/DC Table and Selection
Guide
Address expansion pins/balls in the pinouts for all packages are modified as
per JEDEC standard
Added Address Expansion pins in the Pin Definitions Table
Added Truth Table and Note# 7 for CY7C1486V25 on page# 11
Modified V , V Test Conditions
OL
OH
Added Industrial temperature range
Removed comment of ‘Lead-free BG packages availability’ below the
Ordering Information
Updated Ordering Information Table
*E
416193 See ECN
NXR
Converted from Preliminary to Final
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed the description of I from Input Load Current to Input Leakage
X
Current on page# 19
Changed the I current values of MODE on page # 19 from -5 µA and 30 µA
X
to -30 µA and 5 µA
Changed the I current values of ZZ on page # 19 from -30 µA and 5 µA
X
to -5 µA and 30 µA
Changed V < V to V < V on page # 19
IH
DD
IH
DD
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated the Ordering Information Table
*F
470723 See ECN
VKN
Added the Maximum Rating for Supply Voltage on V
Relative to GND
DDQ
Changed t , t from 25 ns to 20 ns and t
from 5 ns to 10 ns in TAP
TH TL
TDOV
AC Switching Characteristics table
Updated the Ordering Information table
Document #: 38-05282 Rev. *H
Page 31 of 32
CY7C1480V25
CY7C1482V25
CY7C1486V25
Document Title: CY7C1480V25/CY7C1482V25/CY7C1486V25 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
Document Number: 38-05282
Orig. of
Change
REV.
ECN NO. Issue Date
Description of Change
*G
486690 See ECN
VKN
Corrected the typo in the 209-Ball FBGA pinout.
(Corrected the ball name H9 to V from V
).
SS
SSQ
*H
1026720 See ECN VKN/KKVTMP Added footnote #2 related to V
SSQ
Document #: 38-05282 Rev. *H
Page 32 of 32
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