CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
36-Mbit DDR-II SIO SRAM 2-Word
Burst Architecture
Features
Functional Description
■ 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36)
■ 300 MHz clock for high bandwidth
The CY7C1422BV18, CY7C1429BV18, CY7C1423BV18, and
CY7C1424BV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with Double Data Rate Separate IO (DDR-II SIO)
architecture. The DDR-II SIO consists of two separate ports: the
read port and the write port to access the memory array. The
read port has data outputs to support read operations and the
write port has data inputs to support write operations. The DDR-II
SIO has separate data inputs and data outputs to completely
eliminate the need to “turn-around” the data bus required with
common IO devices. Access to each port is accomplished
through a common address bus. Addresses for read and write
are latched on alternate rising edges of the input (K) clock. Write
data is registered on the rising edges of both K and K. Read data
is driven on the rising edges of C and C if provided, or on the
rising edge of K and K if C/C are not provided. Each address
location is associated with two 8-bit words in the case of
CY7C1422BV18, two 9-bit words in the case of
CY7C1429BV18, two 18-bit words in the case of
CY7C1423BV18, and two 36-bit words in the case of
CY7C1424BV18 that burst sequentially into or out of the device.
■ 2-word burst for reducing address bus frequency
■ Double Data Rate (DDR) interfaces
(data transferred at 600 MHz) at 300 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■ Synchronous internally self-timed writes
■ DDR-II operates with 1.5 cycle read latency when the DLL is
enabled
■ Operates similar to a DDR-I device with 1 cycle read latency in
DLL off mode
■ 1.8V core power supply with HSTL inputs and outputs
Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs are tightly matched to the
two output echo clocks CQ/CQ, eliminating the need to capture
data separately from each individual DDR-II SIO SRAM in the
system design. Output data clocks (C/C) enable maximum
system clocking and data synchronization flexibility.
■ Variable drive HSTL output buffers
■ Expanded HSTL output voltage (1.4V–V
)
DD
■ Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 compatible test access port
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
■ Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1422BV18 – 4M x 8
CY7C1429BV18 – 4M x 9
CY7C1423BV18 – 2M x 18
CY7C1424BV18 – 1M x 36
Selection Guide
Description
300 MHz
300
278 MHz
278
250 MHz
250
200 MHz
200
167 MHz
167
Unit
MHz
mA
Maximum Operating Frequency
Maximum Operating Current
x8
x9
825
775
700
600
500
845
775
700
600
500
x18
x36
880
815
740
600
500
980
890
800
665
560
Cypress Semiconductor Corporation
Document #: 001-07035 Rev. *D
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 16, 2008
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Logic Block Diagram (CY7C1423BV18)
18
D
[17:0]
Write
Write
Data Reg
Data Reg
20
Address
Register
A(19:0)
LD
K
Control
R/W
CLK
Gen.
Logic
K
C
DOFF
Read Data Reg.
C
CQ
36
18
R/W
CQ
Reg.
Reg.
Reg.
V
18
18
REF
Control
Logic
18
LD
18
Q
[17:0]
BWS
[1:0]
Logic Block Diagram (CY7C1424BV18)
36
D
[35:0]
Write
Write
Data Reg
Data Reg
19
Address
Register
A(18:0)
LD
R/W
C
K
Control
Logic
CLK
Gen.
K
DOFF
Read Data Reg.
C
CQ
CQ
72
36
R/W
Reg.
Reg.
Reg.
V
36
36
REF
Control
Logic
36
LD
36
Q
[35:0]
BWS
[3:0]
Document #: 001-07035 Rev. *D
Page 3 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Pin Configuration
The pin configuration for CY7C1422BV18, CY7C1429BV18, CY7C1423BV18, and CY7C1424BV18 follow.
165-Ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1422BV18 (4M x 8)
1
CQ
NC
NC
NC
NC
NC
NC
DOFF
NC
NC
NC
NC
NC
NC
TDO
2
NC/72M
NC
3
4
R/W
A
5
6
K
K
A
7
8
LD
A
9
10
A
11
CQ
Q3
D3
NC
Q2
NC
NC
ZQ
D1
NC
Q0
D0
NC
NC
TDI
A
B
C
D
E
F
A
NWS
NC/144M
A
1
NC
NC
NC
Q4
NC
Q5
NC/288M
A
NWS
A
NC
NC
NC
NC
NC
NC
NC
NC
NC
D2
NC
NC
0
NC
V
V
V
SS
SS
SS
SS
D4
V
V
V
V
V
V
SS
SS
DD
DD
DD
DD
DD
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
DD
DD
DD
DD
DD
NC
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
NC
V
V
V
V
V
V
V
V
V
V
G
H
J
D5
V
V
V
V
REF
REF
DDQ
DDQ
NC
NC
Q6
NC
NC
Q1
K
L
NC
D6
NC
NC
Q7
A
NC
NC
NC
NC
NC
A
NC
NC
V
V
V
V
SS
SS
SS
SS
M
N
P
R
NC
D7
V
V
NC
SS
SS
SS
V
A
A
A
A
C
C
A
A
A
V
NC
SS
NC
TCK
A
A
A
A
NC
TMS
CY7C1429BV18 (4M x 9)
1
CQ
NC
NC
NC
NC
NC
NC
DOFF
NC
NC
NC
NC
NC
NC
TDO
2
NC/72M
NC
3
4
5
NC
6
K
K
A
7
8
9
10
A
11
CQ
Q4
D4
NC
Q3
NC
NC
ZQ
D2
NC
Q1
D1
NC
Q0
TDI
A
B
C
D
E
F
A
R/W
A
NC/144M
LD
A
A
NC
NC
NC
Q5
NC
Q6
NC/288M
A
BWS
A
NC
NC
NC
NC
NC
NC
NC
NC
NC
D3
NC
NC
0
NC
V
V
V
SS
SS
SS
SS
D5
V
V
V
V
V
V
SS
SS
DD
DD
DD
DD
DD
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
DD
DD
DD
DD
DD
NC
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
NC
V
V
V
V
V
V
V
V
V
V
G
H
J
D6
V
V
V
V
REF
REF
DDQ
DDQ
NC
NC
Q7
NC
NC
Q2
NC
NC
NC
NC
D0
K
L
NC
D7
NC
NC
Q8
A
NC
NC
NC
NC
NC
A
V
V
SS
SS
SS
SS
M
N
P
R
NC
D8
V
V
V
V
SS
SS
SS
V
A
A
A
A
C
C
A
A
A
V
SS
NC
TCK
A
A
A
A
TMS
Note
1. NC/72M, NC/144M and NC/288M are not connected to the die and can be tied to any voltage level.
Document #: 001-07035 Rev. *D
Page 4 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Pin Configuration (continued)
[1]
The pin configuration for CY7C1422BV18, CY7C1429BV18, CY7C1423BV18, and CY7C1424BV18 follow.
165-Ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1423BV18 (2M x 18)
1
CQ
NC
NC
NC
NC
NC
NC
DOFF
NC
NC
NC
NC
NC
NC
TDO
2
NC/144M
Q9
3
4
R/W
A
5
BWS
NC
A
6
K
K
A
7
8
LD
A
9
10
NC/72M
NC
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
A
B
C
D
E
F
A
NC/288M
A
1
D9
BWS
A
NC
NC
NC
NC
NC
NC
0
NC
D10
Q10
Q11
D12
Q13
V
V
V
Q7
SS
SS
SS
SS
D11
V
V
V
V
V
V
NC
SS
SS
DD
DD
DD
DD
DD
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
DD
DD
DD
DD
DD
NC
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
D6
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
Q12
D13
V
V
V
V
V
V
V
V
V
V
NC
G
H
J
NC
V
V
V
V
REF
REF
DDQ
DDQ
NC
NC
D14
NC
Q4
D3
K
L
Q14
D15
D16
Q16
Q17
A
NC
NC
NC
NC
NC
A
Q15
NC
V
V
V
V
NC
Q1
SS
SS
SS
SS
M
N
P
R
V
V
SS
SS
SS
D17
NC
V
A
A
A
A
C
C
A
A
A
V
NC
D0
SS
A
A
A
A
TCK
TMS
CY7C1424BV18 (1M x 36)
1
2
3
4
5
BWS
BWS
A
6
K
K
A
7
BWS
BWS
A
8
9
10
NC/144M
Q17
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
A
B
C
D
E
F
CQ
NC/288M NC/72M
R/W
A
LD
A
A
2
3
1
0
Q27
D27
D28
Q29
Q30
D30
DOFF
D31
Q32
Q33
D33
D34
Q35
TDO
Q18
Q28
D20
D29
Q21
D22
D18
D19
Q19
Q20
D21
Q22
D17
D16
Q16
Q15
D14
Q13
V
V
V
Q7
SS
SS
SS
SS
V
V
V
V
V
V
D15
SS
SS
DD
DD
DD
DD
DD
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
DD
DD
DD
DD
DD
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
D6
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
V
V
V
V
V
V
V
V
V
V
Q14
G
H
J
D13
V
V
V
V
REF
REF
DDQ
DDQ
Q31
D23
D12
Q4
D3
K
L
D32
Q24
Q34
D26
D35
TCK
Q23
D24
D25
Q25
Q26
A
Q12
D11
D10
Q10
Q9
V
V
Q11
Q1
SS
SS
SS
SS
M
N
P
R
V
V
V
V
SS
SS
SS
V
A
A
A
A
C
C
A
A
A
V
D9
SS
A
A
A
A
D0
A
TMS
Document #: 001-07035 Rev. *D
Page 5 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Pin Definitions
Pin Name
IO
Pin Description
D
Input-
Synchronous
Data Input Signals. Sampled on the rising edge of K and K clocks during valid write operations.
[x:0]
CY7C1422BV18 - D
[7:0]
CY7C1429BV18 - D
CY7C1423BV18 - D
CY7C1424BV18 - D
[8:0]
[17:0]
[35:0]
LD
Input-
Synchronous Load. This input is brought LOW when a bus cycle sequence is defined. This definition
Synchronous includes address and read/write direction. All transactions operate on a burst of 2 data (one clock period
of bus activity).
NWS ,
Nibble Write Select 0, 1 − Active LOW (CY7C1422BV18 Only). Sampled on the rising edge of the K
and K clocks during Write operations. Used to select which nibble is written into the device during the
current portion of the Write operations.Nibbles not written remain unaltered.
0
NWS
1
NWS controls D
and NWS controls D
.
0
[3:0]
1
[7:4]
All Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select
ignores the corresponding nibble of data and it is not written into the device.
BWS ,
Input-
Synchronous
Byte Write Select 0, 1, 2 and 3 − Active LOW. Sampled on the rising edge of the K and K clocks during
write operations. Used to select which byte is written into the device during the current portion of the write
operations. Bytes not written remain unaltered.
0
BWS ,
1
BWS ,
2
CY7C1429BV18 − BWS controls D
BWS
0
[8:0]
3
CY7C1423BV18 − BWS controls D
, BWS controls D
, BWS controls D
.
[17:9]
0
[8:0]
1
CY7C1424BV18 − BWS controls D
[35:27].
,BWS controls D
and BWS controls
[26:18]
0
[8:0]
1
[17:9]
2
3
D
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
ignores the corresponding byte of data and it is not written into the device.
A
Input-
Synchronous
Address Inputs. Sampled on the rising edge of the K clock during active read and write operations. These
address inputs are multiplexed for both read and write operations. Internally, the device is organized as
4M x 8 (2 arrays each of 2M x 8) for CY7C1422BV18, 4M x 9 (2 arrays each of 2M x 9) for CY7C1429BV18,
2M x 18 (2 arrays each of 1M x 18) for CY7C1423BV18 and 1M x 36 (2 arrays each of 512K x 36) for
CY7C1424BV18. Therefore, only 21 address inputs are needed to access the entire memory array of
CY7C1422BV18 and CY7C1429BV18, 20 address inputs for CY7C1423BV18 and 19 address inputs for
CY7C1424BV18. These inputs are ignored when the appropriate port is deselected.
Q
Outputs-
Synchronous
Data Output Signals. These pins drive out the requested data during a read operation. Valid data is
driven out on the rising edge of both the C and C clocks during read operations, or K and K when in single
[x:0]
clock mode. When the read port is deselected, Q
are automatically tri-stated.
[x:0]
CY7C1422BV18 − Q
[7:0]
CY7C1429BV18 − Q
[8:0]
CY7C1423BV18 − Q
[17:0]
CY7C1424BV18 − Q
[35:0]
R/W
C
Input-
Synchronous Read/Write Input. When LD is LOW, this input designates the access type (read when
Synchronous R/W is HIGH, write when R/W is LOW) for the loaded address. R/W must meet the setup and hold times
around the edge of K.
Input Clock Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data from
the device. C and C can be used together to deskew the flight times of various devices on the board back
C
K
K
Input Clock Negative Input Clock for Output data. C is used in conjunction with C to clock out the read data from
the device. C and C can be used together to deskew the flight times of various devices on the board back
Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q
when in single clock mode. All accesses are initiated on the rising
[x:0]
edge of K.
Input Clock Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and
to drive out data through Q when in single clock mode.
[x:0]
Document #: 001-07035 Rev. *D
Page 6 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Pin Definitions (continued)
Pin Name
IO
Pin Description
CQ
Echo Clock CQ Referenced with Respect to C. This is a free-running clock and is synchronized to the input clock
for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to K. The timings
CQ
ZQ
Echo Clock CQ Referenced with Respect to C. This is a free-running clock and is synchronized to the input clock
for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to K. The timings
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus
impedance. CQ, CQ, and Q output impedance are set to 0.2 x RQ, where RQ is a resistor connected
[x:0]
between ZQ and ground. Alternatively, this pin can be connected directly to V
, which enables the
DDQ
minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
DOFF
Input
DLL Turn Off − Active LOW. Connecting this pin to ground turns off the DLL inside the device. The timing
in the DLL turned off operation differs from those listed in this data sheet. For normal operation, this pin
can be connected to a pull up through a 10-Kohm or less pull up resistor. The device behaves in DDR-I
mode when the DLL is turned off. In this mode, the device can be operated at a frequency of up to 167
MHz with DDR-I timing.
TDO
Output
Input
Input
Input
N/A
TDO for JTAG.
TCK
TCK Pin for JTAG.
TDI
TDI Pin for JTAG.
TMS
TMS Pin for JTAG.
NC
Not Connected to the Die. Can be tied to any voltage level.
Not Connected to the Die. Can be tied to any voltage level.
Not Connected to the Die. Can be tied to any voltage level.
Not Connected to the Die. Can be tied to any voltage level.
NC/72M
NC/144M
NC/288M
N/A
N/A
N/A
V
Input-
Reference
Reference Voltage Input. Static input used to set the reference level for HSTL inputs, Outputs, and AC
measurement points.
REF
V
V
V
Power Supply Power Supply Inputs to the Core of the Device.
Ground Ground for the Device.
Power Supply Power Supply Inputs for the Outputs of the Device.
DD
SS
DDQ
Document #: 001-07035 Rev. *D
Page 7 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
are then written into the memory array at the specified location.
Write accesses can be initiated on every rising edge of the
positive input clock (K). This pipelines the data flow such that 18
bits of data can be transferred into the device on every rising
edge of the input clocks (K and K).
Functional Overview
The CY7C1422BV18, CY7C1429BV18, CY7C1423BV18, and
CY7C1424BV18 are synchronous pipelined Burst SRAMs
equipped with a DDR-II Seperate IO interface, which operates
with a read latency of one and half cycles when DOFF pin is tied
HIGH. When DOFF pin is set LOW or connected to V
device behaves in DDR-I mode with a read latency of one clock
cycle.
When Write access is deselected, the device ignores all inputs
after the pending write operations are completed.
the
SS
Byte Write Operations
Accesses are initiated on the rising edge of the positive input
clock (K). All synchronous input timing is referenced from the
rising edge of the input clocks (K and K) and all output timing is
referenced to the rising edge of the output clocks (C/C, or K/K
when in single clock mode).
Byte write operations are supported by the CY7C1423BV18. A
write operation is initiated as described in the Write Operations
section. The bytes that are written are determined by BWS and
0
BWS , which are sampled with each set of 18-bit data words.
1
Asserting the appropriate Byte Write Select input during the data
portion of a write latches the data being presented and writes it
into the device. Deasserting the Byte Write Select input during
the data portion of a write enables the data stored in the device
for that byte to remain unaltered. This feature can be used to
simplify read/modify/write operations to a byte write operation.
All synchronous data inputs (D
) pass through input registers
[x:0]
controlled by the rising edge of the input clocks (K and K). All
synchronous data outputs (Q ) pass through output registers
[x:0]
controlled by the rising edge of the output clocks (C/C, or K/K
when in single-clock mode).
All synchronous control (R/W, LD, BWS
input registers controlled by the rising edge of the input clock (K).
) inputs pass through
[0:X]
Single Clock Mode
The CY7C1423BV18 can be used with a single clock that
controls both the input and output registers. In this mode the
device recognizes only a single pair of input clocks (K and K) that
control both the input and output registers. This operation is
identical to the operation if the device had zero skew between
the K/K and C/C clocks. All timing parameters remain the same
in this mode. To use this mode of operation, tie C and C HIGH at
power on. This function is a strap option and not alterable during
device operation.
CY7C1423BV18 is described in the following sections. The
same basic descriptions apply to CY7C1422BV18,
CY7C1429BV18, and CY7C1424BV18.
Read Operations
The CY7C1423BV18 is organized internally as two arrays of 1M
x 18. Accesses are completed in a burst of two sequential 18-bit
data words. Read operations are initiated by asserting R/W
HIGH and LD LOW at the rising edge of the positive input clock
(K). The address presented to address inputs is stored in the
read address register. Following the next K clock rise the corre-
sponding lowest order 18-bit word of data is driven onto the
DDR Operation
The CY7C1423BV18 enables high-performance operation
through high clock frequencies (achieved through pipelining) and
double data rate mode of operation.
Q
using C as the output timing reference. On the subse-
[17:0]
quent rising edge of C, the next 18-bit data word is driven onto
the Q . The requested data is valid 0.45 ns from the rising
If a read occurs after a write cycle, address and data for the write
are stored in registers. The write information must be stored
because the SRAM cannot perform the last word write to the
array without conflicting with the read. The data stays in this
register until the next write cycle occurs. On the first write cycle
after the read(s), the stored data from the earlier write is written
into the SRAM array. This is called a posted write.
[17:0]
edge of the output clock (C or C, or K and K when in single clock
mode, for 200 MHz and 250 MHz device). Read accesses can
be initiated on every rising edge of the positive input clock (K).
This pipelines the data flow such that data is transferred out of
the device on every rising edge of the output clocks, C/C (or K/K
when in single clock mode).
The CY7C1423BV18 first completes the pending read transac-
tions, when read access is deselected. Synchronous internal
circuitry automatically tri-states the output following the next
rising edge of the positive output clock (C).
Depth Expansion
Depth expansion requires replicating the LD control signal for
each bank. All other control signals can be common between
banks as appropriate.
Write Operations
Programmable Impedance
Write operations are initiated by asserting R/W LOW and LD
LOW at the rising edge of the positive input clock (K). The
address presented to address inputs is stored in the write
address register. On the following K clock rise the data presented
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and V to enable the SRAM to adjust its output
SS
driver impedance. The value of RQ must be 5x the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175Ω and 350Ω, with V
output impedance is adjusted every 1024 cycles at power up to
account for drifts in supply voltage and temperature.
to D
provided BWS
is latched and stored into the 18-bit write data register,
[17:0]
are both asserted active. On the subsequent
[1:0]
= 1.5V. The
DDQ
rising edge of the negative input clock (K) the information
presented to D is also stored into the write data register,
[17:0]
provided BWS
are both asserted active. The 36 bits of data
[1:0]
Document #: 001-07035 Rev. *D
Page 8 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Echo Clocks
DLL
Echo clocks are provided on the DDR-II to simplify data capture
on high-speed systems. Two echo clocks are generated by the
DDR-II. CQ is referenced with respect to C and CQ is referenced
with respect to C. These are free-running clocks and are
synchronized to the output clock of the DDR-II. In the single clock
mode, CQ is generated with respect to K and CQ is generated
with respect to K. The timing for the echo clocks is shown in
These chips use a Delay Lock Loop (DLL) that is designed to
function between 120 MHz and the specified maximum clock
frequency. During power up, when the DOFF is tied HIGH, the
DLL is locked after 1024 cycles of stable clock. The DLL can also
be reset by slowing or stopping the input clocks K and K for a
minimum of 30 ns. However, it is not necessary to reset the DLL
to lock it to the desired frequency. The DLL automatically locks
1024 clock cycles after a stable clock is presented. The DLL may
be disabled by applying ground to the DOFF pin. When the DLL
is turned off, the device behaves in DDR-I mode (with one cycle
latency and a longer access time). For information refer to the
application
note
Application Example
Figure 1 shows four DDR-II SIO used in an application.
Figure 1. Application Example
SRAM
B
1
SRAM 4
ZQ
Q
ZQ
Q
CQ
CQ#
K#
R
=
250Ohms
R
=
250Ohms
B
Vt
CQ
CQ#
K#
W
W
S
#
D
A
D
S
LD R/W
LD R/W
#
#
A
R
#
#
#
C
C#
K
C
C#
K
DATA IN
DATA OUT
Address
LD#
Vt
Vt
R
R/W#
BWS#
BUS
MASTER
(CPU
or
ASIC)
SRAM
1
Input CQ
Input CQ#
Input CQ
Input CQ#
SRAM
1
SRAM
4
SRAM
4
Source
K
Source K#
Delayed
K
Delayed K#
R
R
=
50Ohms
Vt
=
VREF
Document #: 001-07035 Rev. *D
Page 9 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Truth Table
The truth table for CY7C1422BV18, CY7C1429BV18, CY7C1423BV18, and CY7C1424BV18 follows.
Operation
K
LD R/W
DQ
DQ
Write Cycle:
Load address; wait one cycle;
input write data on consecutive K and K rising edges.
L-H
L
L
L
D(A + 0) at K(t + 1)↑ D(A + 1) at K(t + 1)↑
Read Cycle:
Load address; wait one and a half cycle;
read data on consecutive C and C rising edges.
L-H
H
Q(A + 0) at C(t + 1)↑ Q(A + 1) at C(t + 2)↑
NOP: No Operation
L-H
H
X
X
X
High-Z
High-Z
Standby: Clock Stopped
Stopped
Previous State
Previous State
Write Cycle Descriptions
The write cycle description table for CY7C1422BV18 and CY7C1423BV18 follows.
BWS / BWS /
0
1
K
Comments
K
NWS
NWS
1
0
L
L
L
L
L–H
–
During the data portion of a write sequence :
CY7C1422BV18 − both nibbles (D
) are written into the device,
[7:0]
CY7C1423BV18 − both bytes (D
) are written into the device.
[17:0]
–
L–H
–
L-H During the data portion of a write sequence :
CY7C1422BV18 − both nibbles (D
) are written into the device,
) are written into the device.
[7:0]
CY7C1423BV18 − both bytes (D
[17:0]
L
H
H
L
–
During the data portion of a write sequence :
CY7C1422BV18 − only the lower nibble (D
) is written into the device, D
remains unaltered.
remains unaltered.
[17:9]
[3:0]
[7:4]
CY7C1423BV18 − only the lower byte (D
) is written into the device, D
[8:0]
L
L–H During the data portion of a write sequence :
CY7C1422BV18 − only the lower nibble (D
) is written into the device, D
remains unaltered.
remains unaltered.
[3:0]
[7:4]
CY7C1423BV18 − only the lower byte (D
) is written into the device, D
[8:0]
[17:9]
H
H
L–H
–
–
During the data portion of a write sequence :
CY7C1422BV18 − only the upper nibble (D
) is written into the device, D
) is written into the device, D
remains unaltered.
[3:0]
[7:4]
CY7C1423BV18 − only the upper byte (D
remains unaltered.
[17:9]
[8:0]
L
L–H During the data portion of a write sequence :
CY7C1422BV18 − only the upper nibble (D
) is written into the device, D
) is written into the device, D
remains unaltered.
remains unaltered.
[7:4]
[3:0]
[8:0]
CY7C1423BV18 − only the upper byte (D
[17:9]
H
H
H
H
L–H
–
–
No data is written into the devices during this portion of a write operation.
L–H No data is written into the devices during this portion of a write operation.
Notes
2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, ↑represents rising edge.
3. Device powers up deselected with the outputs in a tri-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst.
5. “t” represents the cycle at which a Read/Write operation is started. t + 1, and t + 2 are the first, and second clock cycles respectively succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging
symmetrically.
8. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS , NWS , BWS , BWS , BWS and BWS can be altered on
0
1
0
1
2
3
different portions of a write cycle, as long as the setup and hold requirements are achieved.
Document #: 001-07035 Rev. *D
Page 10 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Write Cycle Descriptions
The write cycle description table for CY7C1429BV18 follows.
BWS
K
L–H
–
K
Comments
0
L
L
–
During the Data portion of a write sequence, the single byte (D
) is written into the device.
) is written into the device.
[8:0]
L–H During the Data portion of a write sequence, the single byte (D
[8:0]
H
H
L–H
–
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Write Cycle Descriptions
The write cycle description table for CY7C1424BV18 follows.
BWS
BWS
BWS
BWS
3
K
K
Comments
0
1
2
L
L
L
L
L–H
–
During the Data portion of a write sequence, all four bytes (D
the device.
) are written into
) are written into
[35:0]
L
L
L
H
H
L
L
H
H
H
H
L
L
H
H
H
H
H
H
L
–
L–H
–
L–H During the Data portion of a write sequence, all four bytes (D
the device.
[35:0]
–
During the Data portion of a write sequence, only the lower byte (D
) is written
) is written
[8:0]
into the device. D
remains unaltered.
[35:9]
L
L–H During the Data portion of a write sequence, only the lower byte (D
into the device. D remains unaltered.
[8:0]
[35:9]
H
H
H
H
H
H
L–H
–
–
During the Data portion of a write sequence, only the byte (D
) is written into
[17:9]
the device. D
and D
remains unaltered.
[8:0]
[35:18]
L
L–H During the Data portion of a write sequence, only the byte (D
the device. D and D remains unaltered.
) is written into
[17:9]
[8:0]
[35:18]
H
H
H
H
L–H
–
–
During the Data portion of a write sequence, only the byte (D
) is written into
) is written into
) is written into
) is written into
[26:18]
[26:18]
[35:27]
[35:27]
the device. D
and D
remains unaltered.
[17:0]
[35:27]
L
L–H During the Data portion of a write sequence, only the byte (D
the device. D and D remains unaltered.
[17:0]
[35:27]
H
H
L–H
–
–
During the Data portion of a write sequence, only the byte (D
the device. D remains unaltered.
[26:0]
L
L–H During the Data portion of a write sequence, only the byte (D
the device. D remains unaltered.
[26:0]
H
H
H
H
H
H
H
H
L–H
–
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Document #: 001-07035 Rev. *D
Page 11 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Instruction Register
IEEE 1149.1 Serial Boundary Scan (JTAG)
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
page 15. Upon power up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.
These SRAMs incorporate a serial boundary scan Test Access
Port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-2001. The TAP operates using JEDEC
standard 1.8V IO logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.
(V ) to prevent clocking of the device. TDI and TMS are inter-
SS
nally pulled up and may be unconnected. They may alternatively
be connected to V through a pull up resistor. TDO must be left
unconnected. Upon power up, the device comes up in a reset
state, which does not interfere with the operation of the device.
Bypass Register
DD
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set LOW (V ) when
the BYPASS instruction is executed.
Test Access Port—Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
SS
Boundary Scan Register
Test Mode Select (TMS)
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up inter-
nally, resulting in a logic HIGH level.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can
be used to capture the contents of the input and output ring.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see the TAP Controller State
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.
Identification (ID) Register
Test Data-Out (TDO)
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (V ) for five rising
TAP Instruction Set
DD
edges of TCK. This Reset does not affect the operation of the
SRAM and can be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a high-Z state.
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Instruction
RESERVED and must not be used. The other five instructions
are described in this section in detail.
TAP Registers
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.
Document #: 001-07035 Rev. *D
Page 12 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
IDCODE
BYPASS
The IDCODE instruction loads a vendor-specific, 32-bit code into
the instruction register. It also places the instruction register
between the TDI and TDO pins and shifts the IDCODE out of the
device when the TAP controller enters the Shift-DR state. The
IDCODE instruction is loaded into the instruction register at
power up or whenever the TAP controller is supplied a
Test-Logic-Reset state.
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
EXTEST
The EXTEST instruction drives the preloaded data out through
the system output pins. This instruction also connects the
boundary scan register for serial access between the TDI and
TDO in the Shift-DR controller state.
SAMPLE Z
The SAMPLE Z instruction connects the boundary scan register
between the TDI and TDO pins when the TAP controller is in a
Shift-DR state. The SAMPLE Z command puts the output bus
into a High-Z state until the next command is supplied during the
Update IR state.
EXTEST OUTPUT BUS TRI-STATE
IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tri-state mode.
SAMPLE/PRELOAD
The boundary scan register has a special bit located at bit #108.
When this scan cell, called the “extest output bus tri-state,” is
latched into the preload register during the Update-DR state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it enables the output buffers to drive the
output bus. When LOW, this bit places the output bus into a
High-Z condition.
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is captured
in the boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because there
is a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output undergoes a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This does not harm the device, but
there is no guarantee as to the value that is captured.
Repeatable results may not be possible.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that cell,
during the Shift-DR state. During Update-DR, the value loaded
into that shift-register cell latches into the preload register. When
the EXTEST instruction is entered, this bit directly controls the
output Q-bus pins. Note that this bit is pre-set LOW to enable the
output when the device is powered up, and also when the TAP
controller is in the Test-Logic-Reset state.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture setup plus hold
times (t and t ). The SRAM clock input might not be captured
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
CS
CH
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK captured in the boundary scan register.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
PRELOAD places an initial data pattern at the latched parallel
outputs of the boundary scan register cells before the selection
of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required, that is, while the data
captured is shifted out, the preloaded data can be shifted in.
Document #: 001-07035 Rev. *D
Page 13 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
TAP Controller State Diagram
The state diagram for the TAP controller follows.
[9]
TEST-LOGIC
1
RESET
0
1
1
1
SELECT
TEST-LOGIC/
SELECT
0
IR-SCAN
IDLE
DR-SCAN
0
0
1
1
CAPTURE-DR
0
CAPTURE-IR
0
0
1
0
1
SHIFT-DR
1
SHIFT-IR
1
EXIT1-DR
0
EXIT1-IR
0
0
0
PAUSE-DR
1
PAUSE-IR
1
0
0
EXIT2-DR
1
EXIT2-IR
1
UPDATE-IR
0
UPDATE-DR
1
1
0
Note
9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document #: 001-07035 Rev. *D
Page 14 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
TAP Controller Block Diagram
0
Bypass Register
2
1
1
1
0
0
0
Selection
TDI
Selection
Circuitry
TDO
Instruction Register
Circuitry
31 30
29
.
.
2
Identification Register
.
108
.
.
.
2
Boundary Scan Register
TCK
TMS
TAP Controller
TAP Electrical Characteristics
Over the Operating Range
Parameter
Description
Output HIGH Voltage
Test Conditions
= −2.0 mA
Min
1.4
1.6
Max
Unit
V
V
V
V
V
V
I
I
I
I
I
V
V
OH1
OH2
OL1
OL2
IH
OH
OH
OL
OL
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
= −100 μA
= 2.0 mA
0.4
0.2
V
= 100 μA
V
0.65V
V
+ 0.3
V
DD
DD
Input LOW Voltage
–0.3
–5
0.35V
5
V
IL
DD
Input and Output Load Current
GND ≤ V ≤ V
DD
μA
X
I
Notes
10. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.
11. Overshoot: V (AC) < V + 0.85V (Pulse width less than t /2).
/2), Undershoot: V (AC) > −1.5V (Pulse width less than t
IH
DDQ
CYC
IL
CYC
12. All Voltage referenced to Ground.
Document #: 001-07035 Rev. *D
Page 15 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
TAP AC Switching Characteristics
Over the Operating Range
Parameter
Description
Min
Max
Unit
ns
t
t
t
t
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH
50
TCYC
TF
20
MHz
ns
20
20
TH
TCK Clock LOW
ns
TL
Setup Times
t
t
t
TMS Setup to TCK Clock Rise
TDI Setup to TCK Clock Rise
Capture Setup to TCK Rise
5
5
5
ns
ns
ns
TMSS
TDIS
CS
Hold Times
t
t
t
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
5
5
5
ns
ns
ns
TMSH
TDIH
CH
Capture Hold after Clock Rise
Output Times
t
t
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
10
ns
ns
TDOV
TDOX
0
TAP Timing and Test Conditions
Figure 2 shows the TAP timing and test conditions.
Figure 2. TAP Timing and Test Conditions
0.9V
ALL INPUT PULSES
1.8V
50Ω
0.9V
TDO
0V
Z = 50
Ω
0
C = 20 pF
L
t
t
TH
TL
GND
(a)
Test Clock
TCK
t
TCYC
t
TMSH
t
TMSS
Test Mode Select
TMS
t
TDIS
t
TDIH
Test Data In
TDI
Test Data Out
TDO
t
TDOV
t
TDOX
Notes
13. t and t refer to the setup and hold time requirements of latching data from the boundary scan register.
CS
CH
14. Test conditions are specified using the load in TAP AC Test Conditions. t /t = 1 ns.
R
F
Document #: 001-07035 Rev. *D
Page 16 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Identification Register Definitions
Value
Instruction Field
Description
CY7C1422BV18
CY7C1429BV18
000
CY7C1423BV18
000
CY7C1424BV18
Revision Number
(31:29)
000
000
Version number.
Cypress Device ID 11010100010000111 11010100010001111 11010100010010111 11010100010100111 Defines the type of
(28:12)
SRAM.
Cypress JEDEC ID
(11:1)
00000110100
1
00000110100
1
00000110100
1
00000110100
1
Allows unique
identification of
SRAM vendor.
ID Register
Presence (0)
Indicates the
presence of an ID
register.
Scan Register Sizes
Register Name
Bit Size
Instruction
Bypass
3
1
ID
32
109
Boundary Scan
Instruction Codes
Instruction
EXTEST
Code
000
Description
Captures the input and output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the input and output contents. Places the boundary scan register between TDI and
TDO. Forces all SRAM output drivers to a High-Z state.
RESERVED
011
100
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
Captures the input and output ring contents. Places the boundary scan register between TDI
and TDO. Does not affect the SRAM operation.
RESERVED
RESERVED
BYPASS
101
110
111
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operation.
Document #: 001-07035 Rev. *D
Page 17 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Boundary Scan Order
Bit #
0
Bump ID
6R
Bit #
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
Bump ID
10G
9G
Bit #
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
Bump ID
6A
5B
5A
4A
5C
4B
3A
2A
1A
2B
3B
1C
1B
3D
3C
1D
2C
3E
2D
2E
1E
2F
Bit #
84
Bump ID
1J
1
6P
85
2J
2
6N
11F
11G
9F
86
3K
3
7P
87
3J
4
7N
88
2K
5
7R
10F
11E
10E
10D
9E
89
1K
6
8R
90
2L
7
8P
91
3L
8
9R
92
1M
1L
9
11P
10P
10N
9P
93
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
10C
11D
9C
94
3N
95
3M
1N
96
10M
11N
9M
9D
97
2M
3P
11B
11C
9B
98
99
2N
9N
100
101
102
103
104
105
106
107
108
2P
11L
11M
9L
10B
11A
10A
9A
1P
3R
4R
10L
11K
10K
9J
4P
8B
5P
7C
3F
5N
6C
1G
1F
5R
9K
8A
Internal
10J
11J
11H
7A
3G
2G
1H
7B
6B
Document #: 001-07035 Rev. *D
Page 18 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
DLL Constraints
Power Up Sequence in DDR-II SRAM
■ DLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as t
DDR-II SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.
.
KC Var
■ The DLL functions at frequencies down to 120 MHz.
Power Up Sequence
■ If the input clock is unstable and the DLL is enabled, then the
DLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide1024 cycles stable clock
to relock to the desired clock frequency.
■ Apply power and drive DOFF either HIGH or LOW (All other
inputs can be HIGH or LOW).
❐ Apply V before V
.
DD
DDQ
❐ Apply V
before V
or at the same time as V
.
DDQ
REF
REF
❐ Drive DOFF HIGH.
■ Provide stable DOFF (HIGH), power and clock (K, K) for 1024
cycles to lock the DLL.
Figure 3. Power Up Waveforms
K
K
Unstable Clock
> 1024 Stable clock
Stable)
DDQ
Start Normal
Operation
/
V
Clock Start (Clock Starts after V
DD
Stable (< +/- 0.1V DC per 50ns )
/
/
V
VDDQ
V
VDD
DD
DDQ
Fix High (or tie to V
)
DDQ
DOFF
Document #: 001-07035 Rev. *D
Page 19 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V
Latch-up Current ................................................... > 200 mA
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied.. –55°C to +125°C
Operating Range
Ambient
Range
Commercial
Industrial
Temperature (T )
V
V
DDQ
Supply Voltage on V Relative to GND........–0.5V to +2.9V
A
DD
DD
0°C to +70°C
1.8 ± 0.1V
1.4V to
Supply Voltage on V
Relative to GND.......–0.5V to +V
DD
DDQ
V
DD
–40°C to +85°C
DC Applied to Outputs in High-Z ........ –0.5V to V
+ 0.3V
DDQ
DC Input Voltage
.............................. –0.5V to V + 0.3V
DD
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Power Supply Voltage
IO Supply Voltage
Test Conditions
Min
1.7
1.4
Typ
Max
Unit
V
1.8
1.5
1.9
V
V
DD
V
V
V
V
V
V
V
I
V
DD
DDQ
OH
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Note 16
Note 17
V
V
/2 – 0.12
/2 – 0.12
– 0.2
V
V
/2 + 0.12
/2 + 0.12
V
DDQ
DDQ
DDQ
V
OL
DDQ
I
I
= −0.1 mA, Nominal Impedance
V
V
V
OH(LOW)
OL(LOW)
IH
OH
OL
DDQ
DDQ
= 0.1 mA, Nominal Impedance
V
0.2
V
SS
V
+ 0.1
V
+ 0.3
V
REF
DDQ
–0.3
V
– 0.1
V
IL
REF
Input Leakage Current
Output Leakage Current
Input Reference Voltage
GND ≤ V ≤ V
−5
−5
5
μA
μA
V
X
I
DDQ
I
GND ≤ V ≤ V
Output Disabled
5
OZ
I
DDQ,
V
Typical Value = 0.75V
0.68
0.75
0.95
825
845
880
980
775
775
815
890
700
700
740
800
REF
I
V
Operating Supply
V
= Max,
300MHz
278MHz
250MHz
(x8)
(x9)
mA
DD
DD
DD
I
= 0 mA,
OUT
f = f
= 1/t
MAX
CYC
(x18)
(x36)
(x8)
mA
mA
(x9)
(x18)
(x36)
(x8)
(x9)
(x18)
(x36)
Notes
15. Power up: assumes a linear ramp from 0V to V (min) within 200 ms. During this time V < V and V
< V
DD
.
DD
IH
DD
DDQ
16. Outputs are impedance controlled. I = –(V
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
OH
DDQ
17. Outputs are impedance controlled. I = (V
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
OL
DDQ
18. V
(min) = 0.68V or 0.46V
, whichever is larger, V
(max) = 0.95V or 0.54V
, whichever is smaller.
REF
DDQ
REF
DDQ
19. The operation current is calculated with 50% read cycle and 50% write cycle.
Document #: 001-07035 Rev. *D
Page 20 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Electrical Characteristics (continued)
DC Electrical Characteristics
[12]
Over the Operating Range
Parameter
Description
Test Conditions
200MHz
= 0 mA,
Min
Typ
Max
600
600
600
665
500
500
500
560
325
325
345
375
310
310
325
355
300
300
310
330
285
285
290
300
275
275
275
285
Unit
I
V
Operating Supply
V
= Max,
(x8)
(x9)
mA
DD
DD
DD
I
OUT
f = f
= 1/t
MAX
CYC
(x18)
(x36)
(x8)
167MHz
300MHz
278MHz
250MHz
200MHz
167MHz
mA
mA
mA
mA
mA
mA
(x9)
(x18)
(x36)
(x8)
I
Automatic Power down
Current
Max V
,
SB1
DD
Both Ports Deselected,
(x9)
V
≥ V or V ≤ V
IN
IH
IN
IL
f = f
Inputs Static
= 1/t
,
(x18)
(x36)
(x8)
MAX
CYC
(x9)
(x18)
(x36)
(x8)
(x9)
(x18)
(x36)
(x8)
(x9)
(x18)
(x36)
(x8)
(x9)
(x18)
(x36)
AC Electrical Characteristics
Over the Operating Range
Parameter
Description
Input HIGH Voltage
Input LOW Voltage
Test Conditions
Min
+ 0.2
REF
Typ
–
Max
Unit
V
V
V
–
IH
IL
V
–
–
V
– 0.2
V
REF
Document #: 001-07035 Rev. *D
Page 21 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Max
Parameter
Description
Input Capacitance
Test Conditions
Unit
C
T = 25°C, f = 1 MHz, V = 1.8V, V = 1.5V
DDQ
5
4
5
pF
pF
pF
IN
A
DD
C
C
Clock Input Capacitance
Output Capacitance
CLK
O
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
165 FBGA
Package
Parameter
Description
Test Conditions
Unit
Θ
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
17.2
°C/W
JA
Θ
Thermal Resistance
(Junction to Case)
3.2
°C/W
JC
Figure 4. AC Test Loads and Waveforms
V
REF = 0.75V
0.75V
VREF
VREF
0.75V
R = 50Ω
OUTPUT
ALL INPUT PULSES
1.25V
Z = 50Ω
0
OUTPUT
Device
Under
Test
R = 50Ω
L
0.75V
Device
Under
0.25V
5 pF
VREF = 0.75V
Slew Rate = 2 V/ns
ZQ
Test
ZQ
RQ =
RQ =
250Ω
250Ω
INCLUDING
JIG AND
SCOPE
(a)
(b)
Note
20. Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250Ω, V
= 1.5V, input
DDQ
pulse levels of 0.25V to 1.25V, and output loading of the specified I /I and load capacitance shown in (a) of AC Test Loads and Waveforms.
OL OH
Document #: 001-07035 Rev. *D
Page 22 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Switching Characteristics
Over the Operating Range
300 MHz
278 MHz
250 MHz
200 MHz
167 MHz
Cypress Consortium
Parameter Parameter
Description
(Typical) to the First Access
DD
Unit
Min Max Min Max Min Max Min Max Min Max
t
t
t
t
t
V
1
1
1
1
1
ms
ns
ns
ns
ns
POWER
CYC
KH
t
t
t
t
K Clock and C Clock Cycle Time
Input Clock (K/K; C/C) HIGH
Input Clock (K/K; C/C) LOW
3.3 8.4 3.6 8.4 4.0 8.4 5.0 8.4 6.0 8.4
KHKH
KHKL
KLKH
KHKH
1.32
1.32
1.49
–
–
–
1.4
1.4
1.6
–
–
–
1.6
1.6
1.8
–
–
–
2.0
2.0
2.2
–
–
–
2.4
2.4
2.7
–
–
–
KL
K Clock Rise to K Clock Rise and C
to C Rise (rising edge to rising edge)
KHKH
t
t
0
1.45
0
1.55
0
1.8
0
2.2
0
2.7
ns
K/K Clock Rise to C/C Clock Rise
(rising edge to rising edge)
KHCH
KHCH
Setup Times
t
t
t
t
Address Setup to K Clock Rise
0.4
0.4
–
–
0.4
0.4
–
–
0.5
0.5
–
–
0.6
0.6
–
–
0.7
0.7
–
–
ns
ns
SA
SC
AVKH
IVKH
Control Setup to K Clock Rise
(LD, R/W)
t
t
t
t
Double Data Rate Control Setup to 0.3
Clock (K/K) Rise
–
–
0.3
0.3
–
–
0.35
0.35
–
–
0.4
0.4
–
–
0.5
0.5
–
–
ns
ns
SCDDR
IVKH
(BWS , BWS , BWS , BWS )
0
1
2
3
SD
0.3
D
Setup to Clock (K/K) Rise
DVKH
[X:0]
Hold Times
t
t
t
t
0.4
0.4
–
–
0.4
0.4
–
–
0.5
0.5
–
–
0.6
0.6
–
–
0.7
0.7
–
–
ns
ns
Address Hold after K Clock Rise
HA
HC
KHAX
KHIX
Control Hold after K Clock Rise
(LD, R/W)
t
t
t
t
Double Data Rate Control Hold after 0.3
Clock (K/K) Rise
–
–
0.3
0.3
–
–
0.35
0.35
–
–
0.4
0.4
–
–
0.5
0.5
–
–
ns
ns
HCDDR
HD
KHIX
(BWS , BWS , BWS , BWS )
0
1
2
3
0.3
D
Hold after Clock (K/K) Rise
KHDX
[X:0]
Notes
21. When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being
operated and outputs data with the output timings of that frequency range.
22. This part has a voltage regulator internally; t
initiated.
is the time that the power must be supplied above V minimum initially before a read or write operation can be
DD
POWER
23. For D2 data signal on CY7C1429BV18 device, t is 0.5 ns for 200 MHz, 250 MHz, 278 MHz and 300 MHz frequencies.
SD
Document #: 001-07035 Rev. *D
Page 23 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Switching Characteristics (continued)
[20, 21]
Over the Operating Range
300 MHz
278 MHz
250 MHz
200 MHz
167 MHz
Cypress Consortium
Description
Unit
Parameter Parameter
Min Max Min Max Min Max Min Max Min Max
Output Times
t
t
–
0.45
–
–
0.45
–
–
0.45
–
–
0.45
–
–
0.50 ns
ns
C/C Clock Rise (or K/K in single
clock mode) to Data Valid
CO
CHQV
t
t
–0.45
–0.45
–0.45
–0.45
–0.50
–
Data Output Hold after Output C/C
Clock Rise (Active to Active)
DOH
CHQX
t
t
t
t
–
0.45
–
–
0.45
–
–
0.45
–
–
0.45
–
–
0.50 ns
ns
C/C Clock Rise to Echo Clock Valid
CCQO
CQOH
CHCQV
CHCQX
–0.45
–0.45
–0.45
–0.45
–0.50
–
Echo Clock Hold after C/C Clock
Rise
t
t
t
t
t
t
t
t
Echo Clock High to Data Valid
Echo Clock High to Data Invalid
0.27
0.27
0.30
0.35
0.40 ns
CQD
CQHQV
CQHQX
CQHCQL
CQHCQH
–0.27
1.24
1.24
–
–
–
–0.27
1.35
1.35
–
–
–
–0.30
1.55
1.55
–
–
–
–0.35
1.95
1.95
–
–
–
–0.40
2.45
2.45
–
–
–
ns
ns
ns
CQDOH
CQH
Output Clock (CQ/CQ) HIGH
CQ Clock Rise to CQ Clock Rise
CQHCQH
(rising edge to rising edge)
t
t
t
t
–
0.45
–
–
0.45
–
–
0.45
–
–
0.45
–
–
0.50 ns
ns
Clock (C/C) Rise to High-Z
(Active to High-Z)
CHZ
CHQZ
–0.45
–0.45
–0.45
–0.45
–0.50
–
Clock (C/C) Rise to Low-Z
CLZ
CHQX1
DLL Timing
t
t
t
t
t
t
Clock Phase Jitter
–
0.20
–
–
0.20
–
–
0.20
–
–
0.20
–
–
0.20 ns
Cycles
ns
KC Var
KC Var
DLL Lock Time (K, C)
K Static to DLL Reset
1024
30
1024
30
1024
30
1024
30
1024
30
–
KC lock
KC Reset
KC lock
KC Reset
Notes
24. These parameters are extrapolated from the input timing parameters (t
- 250 ps, where 250 ps is the internal jitter. An input jitter of 200 ps (t
) is already
KHKH
KC Var
included in the t
). These parameters are only guaranteed by design and are not tested in production.
KHKH
25. t
, t
, are specified with a load capacitance of 5 pF as in (b) of AC Test Loads and Waveforms. Transition is measured ± 100 mV from steady-state voltage.
CHZ CLZ
26. At any voltage and temperature t
is less than t
and t
less than t
.
CHZ
CLZ
CHZ
CO
Document #: 001-07035 Rev. *D
Page 24 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Switching Waveforms
Figure 5. Read/Write/Deselect Sequence
NOP
1
READ
(burst of 2)
2
WRITE
READ
READ
(burst of 2)
3
WRITE
(burst of 2)
4
NOP
7
(burst of 2) (burst of 2)
5
6
8
K
t
t
t
t
KH
KL
CYC
KHKH
K
LD
t
t
SC
HC
R/W
A
A0
A1
A2
A3
A4
t
t
HD
HD
t
t
SA
HA
t
t
SD
SD
D
Q
D20
D21
D30
D31
Q00
Q10
Q11
Q01
Q40
Q41
t
CQD
t
t
CLZ
t
DOH
KHCH
t
KHCH
t
CHZ
t
t
CQDOH
CO
C
t
t
t
KHKH
t
KH
CYC
KL
C#
t
CCQO
t
CQOH
CQ
t
t
t
CQHCQH
CCQO
CQH
t
CQOH
CQ#
DON’T CARE
UNDEFINED
Notes
27. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1.
28. Outputs are disabled (High-Z) one clock cycle after a NOP.
29. In this example, if address A4 = A3, then data Q40 = D30 and Q41 = D31. Write data is forwarded immediately as read results. This note applies to the whole diagram.
Document #: 001-07035 Rev. *D
Page 25 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
Speed
(MHz)
Package
Diagram
Operating
Range
Ordering Code
Package Type
300 CY7C1422BV18-300BZC
CY7C1429BV18-300BZC
CY7C1423BV18-300BZC
CY7C1424BV18-300BZC
CY7C1422BV18-300BZXC
CY7C1429BV18-300BZXC
CY7C1423BV18-300BZXC
CY7C1424BV18-300BZXC
CY7C1422BV18-300BZI
CY7C1429BV18-300BZI
CY7C1423BV18-300BZI
CY7C1424BV18-300BZI
CY7C1422BV18-300BZXI
CY7C1429BV18-300BZXI
CY7C1423BV18-300BZXI
CY7C1424BV18-300BZXI
278 CY7C1422BV18-278BZC
CY7C1429BV18-278BZC
CY7C1423BV18-278BZC
CY7C1424BV18-278BZC
CY7C1422BV18-278BZXC
CY7C1429BV18-278BZXC
CY7C1423BV18-278BZXC
CY7C1424BV18-278BZXC
CY7C1422BV18-278BZI
CY7C1429BV18-278BZI
CY7C1423BV18-278BZI
CY7C1424BV18-278BZI
CY7C1422BV18-278BZXI
CY7C1429BV18-278BZXI
CY7C1423BV18-278BZXI
CY7C1424BV18-278BZXI
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
Commercial
Industrial
Commercial
Industrial
Document #: 001-07035 Rev. *D
Page 26 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
Speed
(MHz)
Package
Diagram
Operating
Range
Ordering Code
Package Type
250 CY7C1422BV18-250BZC
CY7C1429BV18-250BZC
CY7C1423BV18-250BZC
CY7C1424BV18-250BZC
CY7C1422BV18-250BZXC
CY7C1429BV18-250BZXC
CY7C1423BV18-250BZXC
CY7C1424BV18-250BZXC
CY7C1422BV18-250BZI
CY7C1429BV18-250BZI
CY7C1423BV18-250BZI
CY7C1424BV18-250BZI
CY7C1422BV18-250BZXI
CY7C1429BV18-250BZXI
CY7C1423BV18-250BZXI
CY7C1424BV18-250BZXI
200 CY7C1422BV18-200BZC
CY7C1429BV18-200BZC
CY7C1423BV18-200BZC
CY7C1424BV18-200BZC
CY7C1422BV18-200BZXC
CY7C1429BV18-200BZXC
CY7C1423BV18-200BZXC
CY7C1424BV18-200BZXC
CY7C1422BV18-200BZI
CY7C1429BV18-200BZI
CY7C1423BV18-200BZI
CY7C1424BV18-200BZI
CY7C1422BV18-200BZXI
CY7C1429BV18-200BZXI
CY7C1423BV18-200BZXI
CY7C1424BV18-200BZXI
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
Commercial
Industrial
Commercial
Industrial
Document #: 001-07035 Rev. *D
Page 27 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
Speed
(MHz)
Package
Diagram
Operating
Range
Ordering Code
Package Type
167 CY7C1422BV18-167BZC
CY7C1429BV18-167BZC
CY7C1423BV18-167BZC
CY7C1424BV18-167BZC
CY7C1422BV18-167BZXC
CY7C1429BV18-167BZXC
CY7C1423BV18-167BZXC
CY7C1424BV18-167BZXC
CY7C1422BV18-167BZI
CY7C1429BV18-167BZI
CY7C1423BV18-167BZI
CY7C1424BV18-167BZI
CY7C1422BV18-167BZXI
CY7C1429BV18-167BZXI
CY7C1423BV18-167BZXI
CY7C1424BV18-167BZXI
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
Commercial
Industrial
Document #: 001-07035 Rev. *D
Page 28 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Package Diagram
Figure 6. 165-ball FBGA (15 x 17 x 1.4 mm), 51-85195
"/44/- 6)%7
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51-85195-*A
Document #: 001-07035 Rev. *D
Page 29 of 30
CY7C1422BV18, CY7C1429BV18
CY7C1423BV18, CY7C1424BV18
Document History Page
Document Title: CY7C1422BV18/CY7C1429BV18/CY7C1423BV18/CY7C1424BV18, 36-Mbit DDR-II SIO SRAM 2-Word
Burst Architecture
Document Number: 001-07035
SUBMISSION ORIG. OF
REV. ECN NO.
DESCRIPTION OF CHANGE
DATE
CHANGE
**
433267
462004
See ECN
See ECN
NXR
New Data Sheet
*A
NXR
Changed t
changed t
from 100 ns to 50 ns, changed t and t from 40 ns to 20 ns,
TCYC TH TL
, t
, t , t
, t
, t from 10 ns to 5 ns and changed t
TMSS TDIS CS TMSH TDIH CH TDOV
from 20 ns to 10 ns in TAP AC Switching Characteristics table
Modified Power-Up waveform
*B
*C
503690
See ECN
See ECN
VKN
Minor change: Moved data sheet to web
1523289
VKN/AESA Converted from preliminary to final, Updated Logic Block diagram, Updated I /I
DD SB
specs, Changed DLL minimum operating frequency from 80MHz to 120MHz
Changed t max spec to 8.4ns for all speed bins, Modified footnotes 20 and 28
CYC
*D
2478647
See ECN
VKN/AESA Changed Ambient Temperature with Power Applied from “–10°C to +85°C” to
“–55°C to +125°C” in the “Maximum Ratings “ on page 20, Updated Power-up
sequence waveform and it’s description, Added footnote #19 related to I
Changed JTAG ID [31:29] from 001 to 000.
,
DD
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© Cypress Semiconductor Corporation, 2006-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used
for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use
as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support
systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 001-07035 Rev. *D
Revised June 16, 2008
Page 30 of 30
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this document
are the trademarks of their respective holders.
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