Samsung Computer Accessories 1H 2011 User Guide

Product Selection Guide

LCD, Memory and Storage - 1H 2011

Download from Www.Somanuals.com. All Manuals Search And Download.

drAM

Pages 4-12

samsung.com/semi/dram

• DDR3 SDRAM

• DDR2 SDRAM

• DDR SDRAM

• SDRAM

• Mobile DRAM

• Graphics DDR SDRAM

• DRAM Ordering

Information

FlASH

Pages 13-15

samsung.com/semi/flash

• SLC Flash

• MLC Flash

• Solid State Drive

• SATA SSD

• SD and microSD Cards

• moviNAND™ (eMMC)

• Flash Ordering

Information

HiGH-SPeed SrAM

Pages 16-20

samsung.com/semi/sram

• Asychronous

• Synchronous

• NtRAM™

• DDR Synchronous SRAM

• QDR Synchronous SRAM

• SRAM Ordering

• Late-Write RR SRAM

Information

Multi-cHiP PAcKAGe

Page 21

samsung.com/semi/mcp

• NAND + MDDR

• moviNAND + LPDDR2

• NOR + UtRAM

StorAGe

Pages 22-24

samsung.com/greenmemory • Solid State Drive

• SATA SSD

samsung.com/hdd

samsungodd.com

• Hard Disk Drive

• Optical Disk Drive

lcd

Pages 25-27

tftlcd.com

• Exclusive Digital

Information Display (E-DID)

• Performance Digital

• Basic Digital Information

Display (B-DID)

• Tablets

Information Display (P-DID) • Notebooks/PCs

• Monitors

samsung.com/semi/dram

1H 2011

Download from Www.Somanuals.com. All Manuals Search And Download.

ddr3 SdrAM reGiStered ModuleS

Density Voltage Organization Part Number

M393B2873FH0-C(F8/H9/K0)(04/05)

Composition

1Gb (128M x8) * 9

Compliance

Speed (Mbps)

Ranks Production

Lead Free & Halogen Free

1066/1333/1600

Now

1GB

1.5V

128Mx72

M393B2873GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8) * 9

Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866

Lead Free & Halogen Free 1066/1333/1600

Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866

Lead Free & Halogen Free 1066/1333/1600

Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866

M393B5673FH0-C(F8/H9/K0)(04/05)

M393B5673GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8) * 18

M393B5670FH0-C(F8/H9/K0)(04/05) 1Gb (256M x4) * 18

M393B5670GB0-C(F8/H9/K0/MA)(08/09) 1Gb (256M x4) * 18

M393B5773CH0-C(F8/H9/K0)(04/05) 2Gb (256M x8) * 9

M393B5773DH0-C(F8/H9/K0/MA)(08/09) 2Gb (256M x8) * 9

1Gb (128M x8) * 18

2GB

1.5V

256Mx72

Lead Free & Halogen Free

1066/1333/1600

1066/1333/1600/1866

1066/1333/1600

M393B5173FH0-C(F8/H9/K0)(04/05)

M393B5173GB0-C(F8/H9)(08/09)

M393B5170FH0-C(F8/H9/K0)(04/05)

1Gb (128M x8) * 36

1Gb (256M x4) * 36

Lead Free & Halogen Free, Flip Chip 1066/1333

Lead Free & Halogen Free

1066/1333/1600

M393B5170GB0-C(F8/H9/K0/MA)(08/09) 1Gb (256M x4) * 36

M393B5273CH0-C(F8/H9/K0)(04/05) 2Gb (256M x8) * 18

M393B5273DH0-C(F8/H9/K0/MA)(08/09) 2Gb (256M x8) * 18

M393B5270CH0-C(F8/H9/K0)(04/05) 2Gb (512M x4) * 18

M393B5270DH0-C(F8/H9/K0/MA)(08/09) 2Gb (512M x4) * 18

Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866

4GB

8GB

1.5V

512Mx72

Lead Free & Halogen Free

1066/1333/1600

1066/1333/1600/1866

1066/1333/1600

1066/1333/1600/1866

1066/1333

M393B1K73CH0-C(F8/H9)(04/05)

M393B1K73DH0-C(F8/H9)(08/09)

M393B1K70CH0-C(F8/H9/K0)(04/05)

2Gb (256M x8) * 36

2Gb (512M x4) * 36

1066/1333

1Gx72

1066/1333/1600

1066/1333/1600/1866

1066/1333

M393B1K70DH0-C(F8/H9/K0/MA)(08/09) 2Gb (512M x4) * 36

M393B2K70CM0-C(F8/H9)(04/05)

M393B2K70DM0-C(F8/H9)(08/09)

2Gb DDP (1024M x4) * 36

16GB

8GB

1.5V

2Gx72

1Gx72

1066/1333

M393B1G70BH0-C(F8/H9/K0/MA)(08/09) 4Gb (1G x4) * 18

M393B1G73BH0-C(F8/H9/K0/MA)(08/09) 4Gb (512M x8) * 18

1066/1333/1600/1866

1066/1333/1600

1066/1333

M393B2G70AH0-C(F8/H9/K0)(04/05)

M393B2G70BH0-C(F8/H9/K0)(08/09)

M393B2G73AH0-C(F8/H9)(04/05)

M393B2G73BH0-C(F8/H9)(08/09)

M393B4G70AM0-C(F8/H9)(04/05)

M393B4G70BM0-C(F8/H9)(08/09)

4Gb (1024M x4) * 36

4Gb (512M x8) * 36

16GB

1.5V

2Gx72

4Gb (512M x8) * 36

1066/1333

4Gb DDP (2048M x4) * 36

1066/1333

32GB

8GB

1.5V

4Gx72

1Gx72

1066/1333

M393B1G70BH0-Y(F8/H9/K0/MA)(08/09) 4Gb (1G x4) * 18

M393B1G73BH0-Y(F8/H9/K0/MA)(08/09) 4Gb (512M x8) * 18

1066/1333/1600

1066/1333

1.35V

M393B2G70AH0-Y(F8/H9)(04/05)

M393B2G70BH0-Y(F8/H9/K0)(08/09)

M393B2G73AH0-Y(F8/H9)(04/05)

M393B4G70AM0-Y(F8/H9)(04/05)

M393B4G70BM0-Y(F8/H9)(08/09)

M393B5773CH0-Y(F8/H9/K0)(04/05)

M393B5773DH0-Y(F8/H9/K0)(08/09)

M393B5173FH0-Y(F8/H9)(04/05)

M393B5173GB0-Y(F8/H9)(08/09)

M393B5170FH0-Y(F8/H9/K0)(04/05)

M393B5170GB0-Y(F8/H9/K0)(08/09)

M393B5273CH0-Y(F8/H9/K0)(04/05)

M393B5273DH0-Y(F8/H9/K0)(08/09)

M393B5270CH0-Y(F8/H9/K0)(04/05)

M393B5270DH0-Y(F8/H9/K0)(08/09)

M393B1K73CH0-Y(F8/H9)(04/05)

M393B1K73DH0-Y(F8/H9)(08/09)

M393B1K70CH0-Y(F8/H9/K0)(04/05)

M393B1K70DH0-Y(F8/H9/K0)(08/09)

M393B2K70CM0-Y(F8/H9)(04/05)

M393B2K70DM0-Y(F8/H9)(08/09)

4Gb (1024M x4) * 36

4Gb (512M x8) * 36

4Gb DDP (2048M x4) * 36

2Gb (256M x4) * 9

1066/1333/1600

1066/1333

16GB

1.35V

2Gx72

1066/1333

32GB

2GB

1.35V

4Gx72

1066/1333

1066/1333/1600

1066/1333

256Mx72

2Gb (256M x4) * 9

1Gb (128M x8) * 36

1Gb (256M x4) * 36

2Gb (256M x8) * 18

2Gb (512M x4) * 18

2Gb (256M x8) * 36

2Gb (512M x4) * 36

2Gb DDP (1024M x4) * 36

Lead Free & Halogen Free, Flip Chip 1066/1333

Lead Free & Halogen Free 1066/1333

Lead Free & Halogen Free, Flip Chip 1066/1333/1600

4GB

8GB

1.35V

512Mx72

Lead Free & Halogen Free

1066/1333/1600

1066/1333

1.35V

1Gx72

2Gx72

1066/1333/1600

1066/1333

16GB

1066/1333

Notes:

F7 = DDR3-800 (6-6-6)

04 = IDt B0 register

05 = Inphi C0 register

08 = IDt

09 = Inphi

* K0 (1600Mbps) available in es only

F8 = DDR3-1066 (7-7-7)

H9 = DDR3-1333 (9-9-9)

K0 = DDR3-1600 (11-11-11)

MA = DDR3-1866 (13-13-13)

DDR3 SDRAM

1H 2011

samsung.com/semi/dram

Download from Www.Somanuals.com. All Manuals Search And Download.

ddr3 SdrAM VlP reGiStered ModuleS

Density Voltage Organization Part Number

M392B2873FH0-C(F8/H9/K0)(04/05)

Composition

Compliance

Speed (Mbps)

Ranks

Production

1Gb (128M x8) * 9

Lead Free & Halogen Free

1066/1333/1600

Now

1GB

1.5V

128Mx72

Lead Free & Halogen Free,

Flip Chip

M392B2873GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8) * 9

1066/1333/1600/1866

1066/1333/K0

Now

M392B5673FH0-C(F8/H9/K0)(04/05)

M392B5673GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8) * 18

M392B5670FH0-C(F8/H9/K0)(04/05) 1Gb (256M x8) * 18

M392B5670GB0-C(F8/H9/K0/MA)(08/09) 1Gb (256M x8) * 18

1Gb (128M x8) * 18

Lead Free & Halogen Free

Lead Free & Halogen Free,

Flip Chip

1066/1333/1600/1866

1066/1333/1600

Lead Free & Halogen Free

2GB

1.5V

256Mx72

Lead Free & Halogen Free,

Flip Chip

1066/1333/1600/1866

M392B5773CH0-C(F8/H9/K0)(04/05)

2Gb (256M x8) * 9

Lead Free & Halogen Free

1066/1333/1600

1066/1333/1600/1866

1066/1333/1600

1066/1333/1600/1866

1066/1333/1600

1066/1333/1600/1866

1066/1333

Now

M392B5773DH0-C(F8/H9/K0/MA)(08/09) 2Gb (256M x8) * 9

M392B5170FM0-C(F8/H9/K0)(04/05)

M392B5273CH0-C(F8/H9/K0)(04/05)

1Gb DDP (512M x4) * 18

2Gb (256M x8) * 18

4GB

1.5V

512Mx72

M392B5273DH0-C(F8/H9/K0/MA)(08/09) 2Gb (256M x8) * 18

M392B5270CH0-C(F8/H9/K0)(04/05) 2Gb (512M x4) * 18

M392B5270DH0-C(F8/H9/K0/MA)(08/09) 2Gb (512M x4) * 18

M392B1K73CM0-C(F8/H9)(04/05)

M392B1K73DM0-C(F8/H9)(08/09)

M392B1K70CM0-C(F8/H9/K0)(04/05)

2Gb DDP (512M x8) * 18

1066/1333

2Gb DDP (1024M x4) * 18 Lead Free & Halogen Free

1066/1333/1600

1066/1333/1600/1866

1066/1333/1600

1066/1333/1600/1866

1066/1333

8GB

1.5V

1Gx72

M392B1K70DM0-C(F8/H9/K0/MA)(08/09) 2Gb DDP (1024M x4) * 18 Lead Free & Halogen Free

M392B1G73BH0-C(F8/H9/K0/MA)(08/09) 4Gb (512M x8) * 18

M392B1G70BH0-C(F8/H9/K0/MA)(08/09) 4Gb (1024M x4) * 18

Lead Free & Halogen Free

M392B2G70AM0-C(F8/H9/K0)(04/05)

4Gb DDP (2048M x4) * 18 Lead Free & Halogen Free

M392B2G70BM0-C(F8/H9/K0/MA)(08/09) 4Gb DDP (2048M x4) * 18 Lead Free & Halogen Free

16GB

8GB

1.5V

2Gx72

M392B2G73AM0-C(F8/H9)(04/05)

M392B2G73BM0-C(F8/H9)(08/09)

M392B1G73BH0-Y(F8/H9/K0)(08/09)

M392B1G70BH0-Y(F8/H9/K0)(08/09)

M392B2G70AM0-Y(F8/H9)(04/05)

M392B2G70BM0-Y(F8/H9/K0)(08/09)

M392B2G70AM0-Y(F8/H9)(04/05)

M392B2G70BM0-Y(F8/H9)(08/09)

M392B5773CH0-Y(F8/H9/K0)(04/05)

M392B5773DH0-Y(F8/H9/K0)(08/09)

M392B5170FM0-Y(F8/H9/K0)(04/05)

M392B5273CH0-Y(F8/H9/K0)(04/05)

M392B5273DH0-Y(F8/H9/K0)(08/09)

M392B5270CH0-Y(F8/H9/K0)(04/05)

M392B5270DH0-Y(F8/H9/K0)(08/09)

M392B1K73CM0-Y(F8/H9/K0)(04/05)

M392B1K73DM0-Y(F8/H9)(08/09)

M392B1K70CM0-Y(F8/H9/K0)(04/05)

M392B1K70DM0-Y(F8/H9/K0)(08/09)

4Gb DDP (1024M x8) * 18 Lead Free & Halogen Free

1066/1333

4Gb (512M x8) * 18

4Gb (1024M x4) * 18

Lead Free & Halogen Free

1066/1333/1600

1066/1333

1.35V

1Gx72

4Gb DDP (2048M x4) * 18 Lead Free & Halogen Free

4Gb DDP (1024M x8) * 18 Lead Free & Halogen Free

1066/1333/1600

1066/1333

16GB

2GB

2Gx72

1066/1333

2Gb (256M x8) * 9

Lead Free & Halogen Free

1066/1333/1600

1066/1333

256Mx72

2Gb (256M x8) * 9

1Gb DDP (512M x4) * 18

2Gb (256M x8) * 18

2Gb (512M x4) * 18

2Gb DDP (512M x8) * 18

4GB

1.35V

512Mx72

8GB

1.35V

1Gx72

2Gb DDP (1024M x4) * 18 Lead Free & Halogen Free

1066/1333/1600

Notes:

F7 = DDR3-800 (6-6-6)

F8 = DDR3-1066 (7-7-7)

H9 = DDR3-1333 (9-9-9)

K0 = DDR3-1600 (11-11-11)

MA = DDR3-1866 (13-13-13)

04 = IDt B0 register

05 = Inphi C0 register

08 = IDt

09 = Inphi

samsung.com/semi/dram

1H 2011

DDR3 SDRAM

Download from Www.Somanuals.com. All Manuals Search And Download.

ddr3 SdrAM unBuFFered ModuleS

Density Voltage Organization Part Number

M378B2873FH0-C(F8/H9/K0)

Composition

Compliance

Speed (Mbps)

Ranks Production

1Gb (128M x8) * 8

1Gb (128M x8) * 16

Lead Free & Halogen Free

Lead Free & Halogen Free,

Flip Chip

Lead Free & Halogen Free

Lead Free & Halogen Free,

Flip Chip

1066/1333/1600

Now

1GB

1.5V

128Mx64

M378B2873GB0-C(F8/H9/K0/MA)

M378B5673FH0-C(F8/H9/K0)

M378B5673GB0-C(F8/H9/K0/MA)

1066/1333/1600/1866

1066/1333/1600

1066/1333/1600/1866

2GB

1.5V

256Mx64

M378B5773CH0-C(F8/H9/K0)

M378B5773DH0-C(F8/H9/K0/MA)

M378B5273CH0-C(F8/H9/K0)

M378B5273DH0-C(F8/H9/K0/MA)

M378B5173BH0-C(F8/H9/K0/MA)

M378B1G73AH0-C(F8/H9/K0)

M378B1G73BH0-C(F8/H9/K0/MA)

2Gb (256M x8) * 8

2Gb (256M x8) * 16

4Gb (512M x8) * 8

4Gb (512M x8) * 16

Lead Free & Halogen Free

1066/1333/1600

Now

Lead Free & Halogen Free

1066/1333/1600/1866

1066/1333/1600

512Mx64

1024Mx64

4GB

8GB

1.5V

1066/1333/1600/1866

1066/1333/1600

1066/1333/1600/1866

ddr3 SdrAM unBuFFered ModuleS (ecc)

Density Voltage Organization Part Number

Composition

Compliance

Speed (Mbps)

Ranks Production

M391B2873FH0-C(F8/H9/K0)

1Gb (128M x8) * 9

Lead Free & Halogen Free

Lead Free & Halogen Free,

Flip Chip

1066/1333/1600

1066/1333/1600/1866

Now

1GB

2GB

1.5V

128Mx72

256Mx72

M391B2873GB0-C(F8/H9/K0/MA)

M391B5673FH0-C(F8/H9/K0)

M391B5773CH0-C(F8/H9/K0)

M391B5773DH0-C(F8/H9/K0/MA)

M391B5273CH0-C(F8/H9/K0)

M391B5273DH0-C(F8/H9/K0/MA)

M391B5173BH0-C(F8/H9/K0/MA)

M391B1G73AH0-C(F8/H9/K0)

M391B1G73BH0-C(F8/H9/K0/MA)

M391B5173BH0-Y(F8/H9/K0)

M391B1G73AH0-Y(F8/H9/K0)

M391B1G73BH0-Y(F8/H9/K0)

M391B2873FH0-Y(F8/H9/K0)

1Gb (128M x8) * 18

2Gb (256M x8) * 9

2Gb (256M x8) * 18

4Gb (512M x8) * 9

4Gb (512M x8) * 18

4Gb (512M x8) * 9

4Gb (512M x8) * 18

1Gb (128M x8) * 9

Lead Free & Halogen Free

1066/1333/1600

Now

Lead Free & Halogen Free

1066/1333/1600

1066/1333/1600/1866

1066/1333/1600

4GB

8GB

4GB

8GB

1.5V

512Mx72

1066/1333/1600/1866

1066/1333/1600

1.5V

1024Mx64

1024Mx72

1024Mx64

1024Mx72

1.5V

1066/1333/1600/1866

1066/1333/1600

1.35V

1066/1333/1600

Lead Free & Halogen Free

Lead Free & Halogen Free,

Flip Chip

1066/1333/1600

1GB

2GB

1.35V

128Mx72

M391B2873GB0-Y(F8/H9/K0)

1Gb (128M x8) * 9

1066/1333/1600

Now

M391B5673FH0-Y(F8/H9/K0)

M391B5773CH0-Y(F8/H9/K0)

M391B5773DH0-Y(F8/H9/K0)

M391B5273CH0-Y(F8/H9/K0)

M391B5273DH0-Y(F8/H9/K0)

1Gb (128M x8) * 18

2Gb (256M x8) * 9

2Gb (256M x8) * 18

Lead Free & Halogen Free

1066/1333/1600

Now

1.35V

256Mx72

512Mx72

Lead Free & Halogen Free

4GB

Notes:

F7 = DDR3-800 (6-6-6)

F8 = DDR3-1066 (7-7-7)

H9 = DDR3-1333 (9-9-9)

K0 = DDR3-1600 (11-11-11)

MA = DDR3-1866 (13-13-13)

ddr3 SdrAM SodiMM ModuleS

Density

Voltage Organization Part Number

Composition

Compliance

Speed (Mbps)

Ranks Production

M471B2873FHs-C(F8/H9/K0)

M471B2873GB0-C(F8/H9/K0/MA)

M471B5673FH0-C(F8/H9/K0)

M471B5673GB0-C(F8/H9/K0/MA)

1Gb (128M x8) * 8

1Gb (128M x8) * 16

Lead Free & Halogen Free

Lead Free & Halogen Free,

Flip Chip

Lead Free & Halogen Free

Lead Free & Halogen Free,

Flip Chip

1066/1333/1600

Now

1GB

1.5V

128Mx64

1066/1333/1600/1866

1066/1333/1600

1066/1333/1600/1866

2GB

1.5V

256Mx64

M471B5773CHs-C(F8/H9/K0)

M471B5773DH0-C(F8/H9/K0/MA)

M471B5273CH0-C(F8/H9/K0)

M471B5273DH0-C(F8/H9/K0/MA)

M471B5173BH0-C(F8/H9/K0)

M471B1G73AH0-C(F8/H9/K0)

M471B1G73BH0-C(F8/H9/K0/MA)

M471B5773CHs-Y(F8/H9)

2Gb (256M x8) * 8

2Gb (256M x8) * 16

4Gb (512M x8) * 8

4Gb (512M x8) * 16

2Gb (256M x8) * 8

2Gb (256M x8) * 16

4Gb (512M x8) * 8

4Gb (512M x8) * 16

Lead Free & Halogen Free

1066/1333/1600

1066/1333/1600/1866

1066/1333/1600

1066/1333/1600/1866

1066/1333/1600

1066/1333/1600/1866

1066/1333/1600

Now

Lead Free & Halogen Free

4GB

8GB

1.5V

512Mx64

1024Mx64

2GB

1.35V

256Mx64

M471B5773DH0-Y(F8/H9/K0)

M471B5273CH0-Y(F8/H9)

4GB

8GB

1.35V

512Mx64

1024Mx64

M471B5273DH0-Y(F8/H9/K0)

M471B5173BH0-Y(F8/H9/K0)

M471B1G73AH0-Y(F8/H9/K0)

M471B1G73BH0-Y(F8/H9/K0)

Notes:

F7 = DDR3-800 (6-6-6)

F8 = DDR3-1066 (7-7-7)

H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13)

DDR3 SDRAM

1H 2011

Download from Www.Somanuals.com. All Manuals Search And Download.

samsung.com/semi/dram

ddr3 SdrAM coMPonentS

Density Voltage Organization Part Number

# Pins-Package Compliance

Speed (Mbps)

Dimensions Production

K4B1G0446F-HC(F8/H9/K0)

K4B1G0446G-BC(F8/H9/K0/MA)

K4B1G0846F-HC(F8/H9/K0)

K4B1G0846G-BC(F8/H9/K0/MA)

78 Ball -FBGA

Lead Free & Halogen Free 1066/1333/1600

Lead Free & Halogen Free,

Flip Chip

7.5x11mm

Now

1Gb

1.5V

256M x4

128M x8

1066/1333/1600/1866

Lead Free & Halogen Free 1066/1333/1600

Lead Free & Halogen Free,

1066/1333/1600/1866

Flip Chip

Lead Free & Halogen Free,

Flip Chip

1Gb

2Gb

1.5V

128M x16

512M x4

K4B1G1646G-BC(F8/H9/K0/MA/NB) 96 Ball -FBGA

1066/1333/1600/1866/2133 7.5x13.3mm Now

K4B2G0446C-HC(F8/H9/K0)

K4B2G0446D-HC(F8/H9/K0/MA)

K4B2G0846C-HC(F8/H9/K0)

K4B2G0846D-HC(F8/H9/K0/MA)

K4B2G1646C-HC(F8/H9/K0/MA)

K4B4G0446A-HC(F8/H9/K0)

K4B4G0446B-HC(F8/H9/K0/MA)

K4B4G0846A-HC(F8/H9/K0)

K4B4G0846B-HC(F8/H9/K0/MA)

K4B1G0446F-HY(F8/H9/K0)

78 Ball -FBGA

96 Ball -FBGA

78 Ball -FBGA

Lead Free & Halogen Free 1066/1333/1600

Lead Free & Halogen Free 1066/1333/1600/1866

Lead Free & Halogen Free 1066/1333/1600

Lead Free & Halogen Free 1066/1333/1600/1866

Lead Free & Halogen Free 1066/1333/1600

Lead Free & Halogen Free 1066/1333/1600/1866

Lead Free & Halogen Free 1066/1333/1600

Lead Free & Halogen Free 1066/1333/1600/1866

Lead Free & Halogen Free 1066/1333/1600

Lead Free & Halogen Free,

1066/1333/1600

Flip Chip

Lead Free & Halogen Free 1066/1333

Lead Free & Halogen Free,

1066/1333/1600

Flip Chip

7.5x11mm

Now

2Gb

4Gb

1.5V

256M x8

128Mx16

1024M x4

7.5x13.3mm Now

7.5x11mm

Now

4Gb

1Gb

1.5V

512M x8

256M x4

1.35V

K4B1G0446G-BY(F8/H9/K0)

K4B1G0846F-HY(F8/H9/K0)

K4B1G0846G-BY(F8/H9/K0)

78 Ball -FBGA

7.5x11mm

Now

1Gb

1.35V

128M x8

K4B2G0446C-HY(F8/H9/K0)

K4B2G0446D-HY(F8/H9/K0)

K4B2G0846C-HY(F8/H9/K0)

K4B2G0846D-HY(F8/H9/K0)

K4B4G0446A-HY(F8/H9/K0)

K4B4G0446B-HY(F8/H9/K0)

K4B4G0846A-HY(F8/H9/K0)

K4B4G0846B-HY(F8/H9/K0)

78 Ball -FBGA

Lead Free & Halogen Free 1066/1333/1600

7.5x11mm

Now

2Gb

4Gb

1.35V

512M x4

256M x8

1024M x4

512M x8

4Gb

Notes:

F7 = DDR3-800 (6-6-6)

F8 = DDR3-1066 (7-7-7)

H9 = DDR3-1333 (9-9-9)

K0 = DDR3-1600 (11-11-11)

MA = DDR3-1866 (13-13-13)

NB = DDR3-2133 (14-14-14)

* MA, and NB are available in es only

ddr2 SdrAM reGiStered ModuleS

Density

Organization

Part Number

Composition

Compliance

Speed (Mbps)

Rank

Production

1GB

128Mx72

M393t2863FBA-C(e6/F7)

M393t5660FBA-C(e6/F7)

M393t5663FBA-C(e6/e7)

M393t5160FBA-C(e6/F7)

(128M x8)*9

(256M x4)*18

(128M x8)*18

(256M x4)*36

Lead free

667/800

Now

2GB

256Mx72

512Mx72

4GB

Notes:

e6 = PC2-5300 (DDR2-667 @ CL=5)

F7 = PC2-6400 (DDR2-800 @ CL=6)

e7 = PC2-6400 (DDR2-800 @ CL=5)

Voltage = 1.8V

ddr2 SdrAM VlP reGiStered ModuleS

Density

Organization

Part Number

Composition

Compliance

Speed (Mbps)

Rank

Production

2GB

256Mx72

M392t5660FBA-Ce6

(256M x4)*18

Lead free

667

Now

ddr2 SdrAM FullY BuFFered ModuleS

Density

Organization

Part Number

Composition

Compliance

Speed (Mbps)

Voltage

Rank

Production

2GB

256Mx72

M395t5663FB4-Ce68

M395t5160FB4-Ce68

M395t5163FB4-Ce68

(128M x8)*18

(256M x4)*36

(128M x8)*36

Lead free

667

1.8V

Now

4GB

512Mx72

Notes:

e6 = PC2-5300 (DDR2-667 @ CL=5)

Voltage = 1.8V (AMB Voltage = 1.5V)

AMB = IDt L4

samsung.com/semi/dram

1H 2011

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DDR3 & DDR2 SDRAM

ddr2 SdrAM unBuFFered ModuleS

Density

Organization

Part Number

Composition

Compliance

Speed (Mbps)

Rank

Production

1GB

2GB

128Mx64

256Mx64

M378t2863FBs-C(e6/F7/e7)

M378t5663FB3-C(e6/F7/e7)

(128M x8)*8

(128M x8)*16

Lead free

667/800

Now

Notes:

e6 = PC2-5300 (DDR2-667 @ CL=5)

e7 = PC2-6400 (DDR2-800 @ CL=5)

F7 = PC2-6400 (DDR2-800 @ CL=6)

Voltage = 1.8V

ddr2 SdrAM unBuFFered ModuleS (ecc)

Density

Organization

Part Number

Composition

Compliance

Speed (Mbps)

Rank

Production

1GB

2GB

128Mx72

256Mx64

M391t2863FB3-C(e6/F7)

M391t5663FB3-C(e6/F7)

(128Mx8)*9

(128Mx8)*18

Lead free

667/800

Now

Notes:

e6 = PC2-5300 (DDR2-667 @ CL=5)

e7 = PC2-6400 (DDR2-800 @ CL=5)

F7 = PC2-6400 (DDR2-800 @ CL=6)

Voltage = 1.8V

ddr2 SdrAM SodiMM ModuleS

Density

Organization

Part Number

Composition

Compliance

Speed (Mbps)

Rank

Production

1GB

2GB

128Mx64

256Mx64

M470t2863FB3-C(e6/F7/e7)

M470t5663FB3-C(e6/F7/e7)

(64Mx16)*8

(128M x8)*8

Lead free

667/800

Now

Notes:

e6 = PC2-5300 (DDR2-667 @ CL=5)

e7 = PC2-6400 (DDR2-800 @ CL=5)

F7 = PC2-6400 (DDR2-800 @ CL=6)

Voltage = 1.8V

ddr2 SdrAM coMPonentS

Density Organization

Part Number

# Pins-Package Dimensions

Package

Speed (Mbps)

Production

256Mb

16Mx16

128M x4

64M x8

K4t56163QN-HC(e6/F7/e7/F8)

K4t51043QI-HC(e6/F7/e7)

84-FBGA

60-FBGA

84-FBGA

60-FBGA

84-FBGA

60-FBGA

84-FBGA

7.5x12.5mm

7.5x9.5mm

7.5x12.5mm

7.5x9.5mm

7.5x12.5mm

7.5x9.5mm

7.5x12.5mm

Lead free & Halogen free

667/800/1066

667/800

Now

K4t51083QI-HC(e6/F7/e7/F8)

K4t51163QI-HC(e6/F7/e7/F8)

K4t51043QJ-HC(e6/F7/e7)

K4t51083QJ-HC(e6/F7/e7/F8)

K4t51163QJ-HC(e6/F7/e7/F8)

K4t1G044QF-BC(e6/F7/e7)

K4t1G084QF-BC(e6/F7/e7/F8)

K4t1G164QF-BC(e6/F7/e7/F8)

667/800/1066

667/800

32M x16

128M x4

64M x8

512Mb

667/800/1066

667/800

32M x16

256M x4

128M x8

64M x16

Now

1Gb

667/800/1066

Notes:

e6 = DDR2-667 (5-5-5)

F7 = DDR2-800 (6-6-6)

e7 = DDR2-800 (5-5-5)

F8 = DDR2-1066 (7-7-7)

Voltage = 1.8V

Package Type

H = FBGA (Lead-free & Halogen-free)

B = FBGA (Lead-free & Halogen-free, Flip Chip)

ddr SdrAM coMPonentS

Density

Organization

Part Number

# Pins - Package

Speed (Mbps)

K4H510438J-LCB3/B0

K4H510438J-HCCC/B3

K4H510838J-LCCC/B3

K4H510838J-HCCC/B3

K4H511638J-LCCC/B3

K4H560438N-LCB3/B0

K4H560838N-LCCC/B3

K4H561638N-LCCC/B3

K4H281638o-LCCC

66-tsoP

60-FBGA

66-tsoP

60-FBGA

66-tsoP

266/333

333/400

266/333

333/400

400

128Mx4

512Mb

64Mx8

32Mx16

64Mx4

32Mx8

16Mx16

8Mx16

256Mb

128Mb

Notes:

B0 = DDR266 (133MHz @ CL=2.5)

A2 = DDR266 (133MHz @ Cl=2)

B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)

SdrAM coMPonentS

Density

Organization

Part Number

# Pins - Package

Speed (Mbps)

Refresh

64Mx4

32Mx8

16Mx16

16Mx8

8Mx16

K4s560432N-LC(L)75000

K4s560832N-LC(L)75000

K4s561632N-LC(L)(75/60)000

K4s280832o-LC(L)75000

K4s281632o-LC(L)(75/60)000

54-tsoP

133

256Mb

133

133/166

133

133/166

128Mb

Notes:

L = Commercial temp., Low Power

For Industrial temperature, check with ssI Marketing

Banks: 4

All products are Lead Free

Voltage: 3.3V

speed: PC133 (133MHz CL=3/PC100 CL2)

DDR2, DDR & SDRAM Components

1H 2011

samsung.com/semi/dram

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MoBile drAM coMPonentS

Type

Density

Organization

Part Number

Package

Power

Production

32Mx16

K4M51163PI-BG(1)

K4M51323PI-HG(1)

K4X56163PN-FG(1)

K4X56323PN-8G(1)

K4X51163PI-FG(1)

K4X51323PI-8G(1)

K4X1G323PF-8G(1)

K4X2G323PC-8G(1)

K4X4G303PC-AG(1)

K4X4G303PC-7G(1)

K4P1G324ee-AG(1)

K4P2G324eC-AG(1)

K3Pe3e300M-XG(1)

K4P4G304eC-AG(1)

K4P4G154eC-FG(1)

K4P4G324eB-FG(1)

K3Pe4e400M-XG(1)

K3Pe4e400A-XG(1)

K4P8G304eC-FC(1)

K3Pe8e800M-XG(1)

K3Pe7e700M-XG(1)

K3Pe7e700A-XG(1)

K3Pe0e00M-XG(1)

54-FBGA

1.8V

1.2V

Now

MsDR

512Mb

16Mx32

90-FBGA

16Mx16

60-FBGA

256Mb

512Mb

8Mx32

90-FBGA

32Mx16

60-FBGA

16Mx32

90-FBGA

MDDR

1Gb

2Gb

32Mx32

90-FBGA

64Mx32

90-FBGA

x32 (2Cs, 2CKe)

1CH x32

168-FBGA, 12x12 PoP, DDP

240-FBGA, 14x14 PoP, DDP

168-FBGA, 12x12 PoP

4Gb

1Gb

2Gb

1CH x32

168-FBGA, 12x12 PoP

2CH x32/ch

1CH x32

216-FBGA, 12x12 PoP

168-FBGA, 12x12 PoP, DDP, 64Mx32*2

134-FBGA, 11x11.5 PoP, DDP, 128x16*2

168-FBGA, 12x12 PoP, MoNo, 128Mx32

216-FBGA, 12x12 PoP, QDP, 64Mx32*2

240-FBGA, 14x14 PoP, QDP, 64Mx32*2

134-FBGA, 11x11.5 PoP, QDP, 128x16*4

216-FBGA, 12x12 PoP, QDP, 64Mx32*4

216-FBGA, 12x12 PoP, DDP, 128Mx32*2

240-FBGA, 14x14 PoP, DDP, 128Mx32*2

216-FBGA, 12x12 PoP, QDP, 128Mx32*4

1CH x32

4Gb

1CH x32

LPDDR2

2CH x32/ch

1CH x32

2CH x32/ch

8Gb

16Gb

Notes:

(1) Speed:

Mobile-sDR

All products offered at extended, Low, i-tCsR & PAsR & Ds (temp, Power)

Mobile-DDR

LPDDR2

60: 166MHz, CL3

75: 133MHz, CL3

D8: 200MHz, CL3

C6: 166MHz, CL3

C1: 800Mbps

GrAPHicS drAM coMPonentS

Type

Density

Organization

Part Number

Package

VDD/VDDQ

Speed Bin (MHz)

K4G20325FC-HC(1)

K4G20325FC-HC04

K4G20325FC-HC03

K4G10325Fe-HC(1)

K4G10325Fe-HC04

K4J10324Ke-HC(1)

K4J52324KI-HC(1)

K4W2G1646C-HC(1)

K4W1G1646G-BC(1)

K4N1G164Qe-HC(1)

170-FBGA

136-FBGA

96 FBGA

1.5/1.5V

2000/2500/3000

1800

2Gb

64Mx32

1.35V/1.35V

1.5/1.5V

GDDR5

2000

2000/2500

1800

1Gb

32Mx32

1.35V/1.35V

1.8V/1.8V

1.8/1.8V

1Gb

32Mx32

16Mx32

128Mx16

64Mx16

700/800/1000/1200

700/800/1000

800/933/1066

400/500

GDDR3

gDDR3

512Mb

2Gb

1.5V/1.5V

1.8/1.8V

1Gb

96 FBGA

84-FBGA

gDDR2

Notes:

Package

H: FBGA (Halogen Free & Lead Free)

B: FBGA (Halogen Free & Lead Free)

(1) Speeds (clock cycle - speed bin)

03: 0.3ns (3000MHz)

04: 0.4ns (2500MHz)

05: 0.5ns (2000MHz)

5C: 0.555 (1800MHz)

08: 0.83ns (1200MHz)

1A: 1ns (1000MHz GDDR3)

1A: 1ns (1066MHz gDDR3) 14: 1.429ns (700MHz)

11: 1.1ns (933MHz)

12: 1.25ns (800MHz)

20: 2.0ns (500MHz)

25: 2.5ns (400MHz)

samsung.com/semi/dram

1H 2011

Mobile & Graphics DRAM Components

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coMPonent drAM orderinG inForMAtion

SAMSUNG Memory

DRAM

Speed

Temp & Power

Package Type

Revision

DRAM Type

Density

Interface (VDD, VDDQ)

Bit Organization

Number of Internal Banks

08: x8

1. Memory (K)

2. DRAM: 4

9. Package Type

15: x16 (2Cs)

16: x16

DDR SDRAM

L: tsoP II (Lead-free & Halogen-free)

H: FBGA (Lead-free & Halogen-free)

F: FBGA for 64Mb DDR (Lead-free & Halogen-free)

6: stsoP II (Lead-free & Halogen-free)

t: tsoP II

26: x4 stack (JeDeC standard)

27: x8 stack (JeDeC standard)

30: x32 (2Cs, 2CKe)

31: x32 (2Cs)

3. DRAM Type

B: DDR3 sDRAM

D: GDDR sDRAM

G: GDDR5 sDRAM

H: DDR sDRAM

J: GDDR3 sDRAM

M: Mobile sDRAM

N: sDDR2 sDRAM

s: sDRAM

32: x32

N: stsoP II

6. # of Internal Banks

G: FBGA

U: tsoP II (Lead-free)

2: 2 Banks

3: 4 Banks

4: 8 Banks

5: 16 Banks

V: stsoP II (Lead-free)

Z: FBGA (Lead-free)

DDR2 SDRAM

t: DDR sDRAM

Z: FBGA (Lead-free)

U: GDDR4 sDRAM

7. Interface ( VDD, VDDQ)

J: FBGA DDP (Lead-free)

V: Mobile DDR sDRAM Power efficient Address

W: sDDR3 sDRAM

2: LVttL, 3.3V, 3.3V

4: LVttL, 2.5V, 2.5V

5: sstL-2 1.8V, 1.8V

6: sstL-15 1.5V, 1.5V

8: sstL-2, 2.5V, 2.5V

A: sstL, 2.5V, 1.8V

F: PoD-15 (1.5V,1.5V)

H: sstL_2 DLL, 3.3V, 2.5V

M: LVttL, 1.8V, 1.5V

N: LVttL, 1.5V, 1.5V

P: LVttL, 1.8V, 1.8V

Q: sstL-2 1.8V, 1.8V

R: sstL-2, 2.8V, 2.8V

U: DRsL, 1.8V, 1.2V

Q: FBGA QDP (Lead-free)

H: FBGA (Lead-free & Halogen-free)

M: FBGA DDP (Lead-free & Halogen-free)

e: FBGA QDP (Lead-free & Halogen-free)

t: FBGA DsP (Lead-free & Halogen-free, thin)

X: Mobile DDR sDRAM

Y: XDR DRAM

Z: Value Added DRAM

4. Density

DDR3 SDRAM

10: 1G, 8K/32ms

Z: FBGA (Lead-free)

16: 16M, 4K/64ms

26: 128M, 4K/32ms

28: 128M, 4K/64ms

32: 32M, 2K/32ms

50: 512M, 32K/16ms

51: 512M, 8K/64ms

52: 512M, 8K/32ms

54: 256M, 16K/16ms

55: 256M, 4K/32ms

56: 256M, 8K/64ms

62: 64M, 2K/16ms

64: 64M, 4K/64ms

68: 768M, 8K/64ms

1G: 1G, 8K/64ms

H: FBGA (Halogen-free & Lead-free)

Graphics Memory

Q: tQFP

U: tQFP (Lead Free)

G: 84/144 FBGA

V: 144 FBGA (Lead Free)

Z: 84 FBGA(Lead Free)

t: tsoP

8. Revision

A: 2nd Generation

B: 3rd Generation

C: 4th Generation

D: 5th Generation

e: 6th Generation

F: 7th Generation

G: 8th Generation

H: 9th Generation

I: 10th Generation

J: 11th Generation

K: 12th Generation

M: 1st Generation

N: 14th Generation

Q: 17th Generation

L: tsoP (Lead Free)

A: 136 FBGA

B: 136 FBGA(Lead Free)

H: FBGA(Hologen Free & Lead Free)

e: 100 FBGA(Hologen Free & Lead Free)

2G: 2G, 8K/64ms

SDRAM

4G: 4G, 8K/64ms

L tsoP II (Lead-free & Halogen-free)

N: stsoP II

5. Bit Organization

t: tsoP II

02: x2

U: tsoP II (Lead-free)

V: stsoP II (Lead-free)

04: x4

06: x4 stack (Flexframe)

07: x8 stack (Flexframe)

DRAM Ordering Information

1H 2011

samsung.com/semi/dram

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coMPonent drAM orderinG inForMAtion

SAMSUNG Memory

DRAM

Speed

Temp & Power

Package Type

Revision

DRAM Type

Density

Interface (VDD, VDDQ)

Bit Organization

Number of Internal Banks

XDR DRAM

DDR2 SDRAM

1 : 1.1ns (900MHz)

55: 5.5ns (183MHz)

12: 1.25ns (800MHz)

60: 6.0ns (166MHz)

14: 1.4ns (700MHz)

16: 1.6ns (600MHz)

J: BoC(LF) P: BoC

CC: DDR2-400 (200MHz @ CL=3, tRCD=3,

tRP=3)

Mobile DRAM

D5: DDR2-533 (266MHz @ CL=4, tRCD=4,

Leaded / Lead Free

tRP=4)

G/A: 52balls FBGA Mono

R/B: 54balls FBGA Mono

X /Z: 54balls BoC Mono

e6: DDR2-667 (333MHz @ CL=5, tRCD=5,

tRP=5)

SDRAM (Default CL=3)

50: 5.0ns (200MHz CL=3)

60: 6.0ns (166MHz CL=3)

67: 6.7ns

F7: DDR2-800 (400MHz @ CL=6, tRCD=6,

J /V: 60(72)balls FBGA Mono 0.5pitch

L /F: 60balls FBGA Mono 0.8pitch

s/D: 90balls FBGA

tRP=6)

e7: DDR2-800 (400MHz @ CL=5, tRCD=5,

tRP=5)

Monolithic (11mm x 13mm)

F/H: smaller 90balls FBGA Mono

Y/P: 54balls CsP DDP

75: 7.5ns PC133 (133MHz CL=3)

DDR3 SDRAM

XDR DRAM

F7: DDR3-800 (400MHz @ CL=6, tRCD=6,

A2: 2.4Gbps, 36ns, 16Cycles

B3: 3.2Gbps, 35ns, 20Cycles

C3: 3.2Gbps, 35ns, 24Cycles

C4: 4.0Gbps, 28ns, 24Cycles

Ds: Daisychain sample

M/e: 90balls FBGA DDP

tRP=6)

F8: DDR3-1066 (533MHz @ CL=7, tRCD=7,

10. Temp & Power - COMMON

(Temp, Power)

tRP=7)

G8: DDR3-1066 (533MHz @ CL=8, tRCD=8,

C: Commercial, Normal (0’C – 95’C) & Normal

Power

tRP=8)

Mobile-SDRAM

60: 166MHz, CL 3

75: 133MHz, CL 3

80: 125MHz, CL 3

1H: 105MHz, CL 2

1L: 105MHz, CL 3

15: 66MHz, CL 2 & 3

H9: DDR3-1333 (667MHz @ CL=9, tRCD=9,

C: (Mobile only) Commercial (-25 ~ 70’C), Normal

Power

tRP=9)

K0: DDR3-1600 (800MHz @ CL=11, tRCD=11,

J: Commercial, Medium

tRP=11)

L: Commercial, Low (0’C – 95’C) & Low Power

L: (Mobile only) Commercial, Low, i-tCsR

F: Commercial, Low, i-tCsR & PAsR & Ds

e: extended (-25~85’C), Normal

N: extended, Low, i-tCsR

Graphics Memory

18: 1.8ns (550MHz)

04: 0.4ns (2500MHz)

20: 2.0ns (500MHz)

05: 0.5ns (2000MHz)

22: 2.2ns (450MHz)

5C: 0.56ns (1800MHz)

25: 2.5ns (400MHz)

06: 0.62ns (1600MHz)

2C: 2.66ns (375MHz)

6A: 0.66ns (1500MHz)

2A: 2.86ns (350MHz)

07: 0.71ns (1400MHz)

33: 3.3ns (300MHz)

7A: 0.77ns (1300MHz)

36: 3.6ns (275MHz)

08: 0.8ns (1200MHz)

40: 4.0ns (250MHz)

09: 0.9ns (1100MHz)

45: 4.5ns (222MHz)

1 : 1.0ns (1000MHz)

50/5A: 5.0ns (200MHz)

Mobile-DDR

C3: 133MHz, CL 3

C2: 100MHz, CL 3

C0: 66MHz, CL 3

G: extended, Low, i-tCsR & PAsR & Ds

I: Industrial, Normal (-40’C – 85’C) & Normal

Power

Note: All of Lead-free or Halogen-free product are in

compliance with RoHs

P: Industrial, Low (-40’C – 85’C) & Low Power

H: Industrial, Low, i-tCsR & PAsR & Ds

11. Speed (Wafer/Chip Biz/BGD: 00)

DDR SDRAM

CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)

B3: DDR333 (166MHz @ CL=2.5, tRCD=3,

tRP=3) *1

A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3)

B0: DDR266 (133MHz @ CL=2.5, tRCD=3,

tRP=3)

Note 1: "B3" has compatibility with "A2" and "B0"

samsung.com/semi/dram

1H 2011

DRAM Ordering Information

Download from Www.Somanuals.com. All Manuals Search And Download.

Module drAM orderinG inForMAtion

SAMSUNG Memory

AMB Vendor

Speed

DIMM

Data bits

Temp & Power

PCB Revision

Package

DRAM Component Type

Depth

Number of Banks

Bit Organization

Component Revision

1. Memory Module: M

2. DIMM Type

5. Depth

9. Package

09: 8M (for 128Mb/512Mb)

17: 16M (for 128Mb/512Mb)

16: 16M

e: FBGA QDP (Lead-free & Halogen-free)

G: FBGA

3: DIMM

H: FBGA (Lead-free & Halogen-free)

J: FBGA DDP (Lead-free)

M: FBGA DDP (Lead-free & Halogen-free)

N: stsoP

4: soDIMM

28: 128M

29: 128M (for 128Mb/512Mb)

32: 32M

3. Data bits

12: x72 184pin Low Profile Registered DIMM

63: x63 PC100 / PC133 μsoDIMM with sPD for

144pin

33: 32M (for 128Mb/512Mb)

51: 512M

Q: FBGA QDP (Lead-free)

t: tsoP II (400mil)

52: 512M (for 512Mb/2Gb)

56: 256M

U: tsoP II (Lead-Free)

64: x64 PC100 / PC133 soDIMM with sPD for

144pin (Intel/JeDeC)

V: stsoP II (Lead-Free)

Z: FBGA(Lead-free)

57: 256M (for 512Mb/2Gb)

59: 256M (for 128Mb/512Mb)

64: 64M

66: x64 Unbuffered DIMM with sPD for

144pin/168pin (Intel/JeDeC)

10. PCB Revision

68: x64 184pin Unbuffered DIMM

70: x64 200pin Unbuffered soDIMM

71: x64 204pin Unbuffered soDIMM

74: x72 /eCC Unbuffered DIMM with sPD for

168pin (Intel/JeDeC)

0: Mother PCB

1: 1st Rev

65: 64M (for 128Mb/512Mb)

1G: 1G

2: 2nd Rev.

1K: 1G (for 2Gb)

3: 3rd Rev.

6. # of Banks in Comp. & Interface

4: 4th Rev.

77: x72 /eCC PLL + Register DIMM with sPD for

168pin (Intel PC100)

1: 4K/64mxRef., 4Banks & sstL-2

2 : 8K/ 64ms Ref., 4Banks & sstL-2

2: 4K/ 64ms Ref., 4Banks & LVttL (sDR only)

5: 8K/ 64ms Ref., 4Banks & LVttL (sDR only)

5: 4Banks & sstL-1.8V

A: Parity DIMM

s: Reduced PCB

U: Low Profile DIMM

78: x64 240pin Unbuffered DIMM

81: x72 184pin eCC unbuffered DIMM

83: x72 184pin Registered DIMM

90: x72 /eCC PLL + Register DIMM

91: x72 240pin eCC unbuffered DIMM

92: x72 240pin VLP Registered DIMM

93: x72 240pin Registered DIMM

95: x72 240pin Fully Buffered DIMM with sPD for

168pin (JeDeC PC133)

11. Temp & Power

C: Commercial temp. (0°C ~ 95°C) & Normal

Power

6: 8Banks & sstL-1.8V

7. Bit Organization

L: Commercial temp. (0°C ~ 95°C) & Low Power

0: x 4

12. Speed

3: x 8

CC: (200MHz @ CL=3, tRCD=3, tRP=3)

D5: (266MHz @ CL=4, tRCD=4, tRP=4)

e6: (333MHz @ CL=5, tRCD=5, tRP=5)

F7: (400MHz @ CL=6, tRCD=6, tRP=6)

e7: (400MHz @ CL=5, tRCD=5, tRP=5)

F8: (533MHz @ CL=7, tRCD=7, tRP=7)

G8: (533MHz @ CL=8, tRCD=8, tRP=8)

H9: (667MHz @ CL=9, tRCD=9, tRP=9)

K0: (800MHz @ CL=10, tRCD=10, tRP=10)

7A: (133MHz CL=3/PC100 CL2)

4: x16

6: x 4 stack (JeDeC standard)

7: x 8 stack (JeDeC standard)

8: x 4 stack

4. DRAM Component Type

B: DDR3 sDRAM (1.5V VDD)

L: DDR sDRAM (2.5V VDD)

s: sDRAM

9: x 8 stack

8. Component Revision

t: DDR2 sDRAM (1.8V VDD)

A: 2nd Gen.

B: 3rd Gen.

C: 4th Gen.

D: 5th Gen.

e: 6th Gen.

F: 7th Gen.

G: 8th Gen.

M: 1st Gen.

Q: 17th Gen.

13. AMB Vendor for FBDIMM

0, 5: Intel

1, 6, 8: IDt

9: Montage

Note: All of Lead-free or Halogen-free product are in

compliance with RoHs

DRAM Ordering Information

1H 2011

samsung.com/semi/dram

Download from Www.Somanuals.com. All Manuals Search And Download.

Slc FlASH

MOQ

T/R

Family

Density

Part Number

Package Type

Org.

Vol(V)

Tray

-xxxx0xx

960

Status

-xxx0Txx

1000

2000

1000

K9QDGD8s5M-HCB*

K9QDGD8U5M-HCB*

K9QDG08U5M-HCB*

K9WCGD8s5M-HCB*

K9WCGD8U5M-HCB*

K9WCG08U5M-HCB*

K9WCG08U5M-HIB*

K9KBGD8s1M-HCB*

K9KBGD8U1M-HCB*

K9KBGD8U1M-HIB*

K9KBG08U1M-HCB*

K9KBG08U1M-HIB*

K9FAG08U0M-HCB*

K9FAG08U0M-HIB*

K9WAG08U1D-sCB0

K9WAG08U1D-sIB0

K9WAG08U1B-PCB0

K9WAG08U1B-PIB0

K9WAG08U1B-KIB0

K9K8G08U0D-sCB0

BGA

1.8

3.3

1.8

3.3

1.8

3.3

C/s

128Gb oDP

BGA

C/s

BGA

C/s

BGA

C/s

BGA

C/s

64Gb QDP

BGA

C/s

BGA

C/s

16Gb Based

BGA

C/s

BGA

C/s

32Gb DDP

16Gb Mono

16Gb QDP

BGA

C/s

BGA

C/s

BGA

C/s

BGA

C/s

BGA

C/s

tsoP1 HF&LF

tsoP1

ULGA HF & LF

tsoP1 HF&LF

C/s

eoL scheduled

C/s

K9K8G08U0D-sIB0

tsoP1 HF&LF

3.3

960

1000

C/s

4Gb Based

8Gb DDP

K9K8G08U0B-PCB0

K9K8G08U0B-PIB0

K9K8G08U1B-KIB0

K9F4G08U0D-sCB0

K9F4G08U0D-sIB0

K9F4G08U0B-PCB0

K9F4G08U0B-PIB0

K9F4G08U0B-KIB0

K9F2G08U0C-sCB0

K9F2G08U0C-sIB0

K9F2G08U0B-PCB0

K9F2G08U0B-PIB0

K9F1G08U0D-sCB0

K9F1G08U0D-sIB0

K9F1G08U0C-PCB0

K9F1G08U0C-PIB0

tsoP1

3.3

960

1000

2000

1000

2000

1000

eoL scheduled

C/s

tsoP1

ULGA HF & LF

tsoP1 HF & LF

tsoP1 HF& LF

tsoP1

C/s

4Gb Mono

eoL scheduled

C/s

tsoP1

ULGA HF & LF

tsoP-LF/HF

tsoP1

C/s

2Gb Based

2Gb Mono

1Gb Mono

eoL scheduled

C/s

tsoP1

tsoP-LF/HF

tsoP1

C/s

1Gb Based

eoL scheduled

tsoP1

*D=DDR and 0=sDR

Please contact your local samsung sales representative for latest product offerings.

Note: All parts are lead free

samsung.com/semi/ﬂash

1H 2011

Download from Www.Somanuals.com. All Manuals Search And Download.

SLC Flash

Mlc FlASH

MOQ

T/R

-xxxx0xx -xxx0Txx

Package

Type

Family

Density

Technology

Part Number

Org.

Vol(V)

Tray

Status

256Gb oDP

128Gb QDP

64Gb DDP

256Gb oDP

128Gb QDP

64Gb DDP

32Gb mono

64Gb QDP

32Gb DDP

16Gb mono

8Gb

32nm ep-MLC

35nm

K9PFGD8U5M-HCe*

K9HDGD8U5M-HCe*

K9LCGD8U1M-HCe*

K9ACGD8U0M-sCB*

K9HDG08U1A-sCB*

K9LCG08U0A-sCB*

K9GBG08U0A-sCB*

K9HCG08U1e-sCB*

K9LBG08U0e-sCB*

K9GAG08U0e-sCB*

K9G8G08U0C-sCB*

K9CFGD8U1M-sCB*

K9BDGD8U0M-sCB*

K9ACGD8U0M-sCB*

BGA

3.3

720

960

C/s Now

32Gb Based

64Gb Based

32Gb Based

BGA

52LGA

48tsoP

tsoP

2000

1000

27nm

2bit

27nm

32nm

16GB Based

8Gb Based

64Gb Based

32nm

256Gb QDP

128Gb DDP

64Gb mono

3bit_27nm DDR

C/s Now

3bit

tsoP

*D=DDR and 0=sDR

Please contact your local samsung sales representative for latest product offerings.

Note: All parts are lead free

Sd and MicroSd FlASH cArdS

Application

Density

2GB

4GB

8GB

sD Cards

16GB

32GB

2GB

4GB

usD Cards

8GB

16GB

32GB

Please contact your local samsung sales representative for part numbers and latest product offerings.

movinAnd™ (eMMc)

Density

Part Number

Package Type

Org.

Vol (V)

Status

2GB

KLM2G1DeHe-B101xxx

KLM4G1FeQA-A001xxx

KLMCGAFeJA-B001xxx

KLMBG8FeJA-A001xxx

KLMAG4FeJA-A001xxx

KLM8G2FeJA-A001xxx

11.5x13

12x16

14x18

1.8/3.3

C/s MP

Cs-April

C/s MP

4GB

8GB

16GB

32GB

64GB

Solid StAte driVeS (SSd)

Interface

Size

Connector

Controller

Component

Density

Part Number

64GB

MZ7PA064HMCD-01000

MZ7PA128HMCD-01000

MZ7PA256HMDR-01000

MZ5PA064HMCD-01000

MZ5PA128HMCD-01000

MZ5PA256HMDR-01000

MZMPA032HMCD-00000

MZMPA064HMDR-00000

MZMPA128HMFU-00000

2.5"

7mmt

thin sAtA

PM810

16Gb

128GB

256GB

64GB

2.5"

9.5mmt

sAtA II - MLC

thin sAtA

PCle

PM810

16Gb

128GB

256GB

32GB

msAtA

64GB

128GB

Please contact your local samsung sales representative for latest product offerings

Note: All parts are lead free

MLC Flash, SD/MicroSD Flash, moviNAND & SSD

1H 2011

samsung.com/semi/ﬂash

Download from Www.Somanuals.com. All Manuals Search And Download.

FlASH Product orderinG inForMAtion

SAMSUNG Memory

Pre-Program Version

NAND Flash

Small Classiﬁcation

Density

Customer Bad Block

Temp

Package

---

Density

Organization

Vcc

Generation

Mode

1. Memory (K)

8. Vcc

13. Temp

A : 1.65V~3.6V

C : 5.0V (4.5V~5.5V)

e : 2.3V~3.6V

B : 2.7V (2.5V~2.9V)

D : 2.65V (2.4V~2.9V)

R : 1.8V (1.65V~1.95V)

t : 2.4V~3.0V

C : Commercial I : Industrial

0 : NoNe (Containing Wafer, CHIP, BIZ, exception

handling code)

2. NAND Flash : 9

3. Small Classification

Q : 1.8V (1.7V~1.95V)

U : 2.7V~3.6V

14. Customer Bad Block

(sLC : single Level Cell, MLC : Multi Level Cell)

V : 3.3V (3.0V~3.6V)

B : Include Bad Block

W : 2.7V~5.5V, 3.0V~5.5V 0 : NoNe

7 : sLC moviNAND

8 : MLC moviNAND

F : sLC Normal

D : Daisychain sample

L : 1~5 Bad Block

9. Mode

0 : Normal

N : ini. 0 blk, add. 10 blk

s : All Good Block

G : MLC Normal

H : MLC QDP

1 : Dual nCe & Dual R/nB

3 : tri /Ce & tri R/B

4 : Quad nCe & single R/nB

5 : Quad nCe & Quad R/nB

9 : 1st block otP

0 : NoNe (Containing Wafer, CHIP, BIZ, exception

handling code)

K : sLC DDP

L : MLC DDP

M : MLC DsP

15. Pre-Program Version

N : sLC DsP

0 : None

A : Mask option 1

P : MLC 8 Die stack

Q : sLC 8 Die stack

s : sLC single sM

t : sLC sINGLe (s/B)

U : 2 stack MsP

W : sLC 4 Die stack

serial (1~9, A~Z)

L : Low grade

10. Generation

M : 1st Generation

A : 2nd Generation

B : 3rd Generation

C : 4th Generation

D : 5th Generation

4~5. Density

12 : 512M

56 : 256M

1G : 1G

11. “ ----”

2G : 2G

12. Package

4G : 4G

A : CoB

8G : 8G

B : FBGA (Halogen-Free, Lead-Free)

C : CHIP BIZ D : 63-tBGA

F : WsoP (Lead-Free) G : FBGA

H : tBGA (Lead-Free)

AG : 16G BG :

32G CG : 64G

DG : 128G

eG : 256G

LG : 24G

I : ULGA (Lead-Free) (12*17)

J : FBGA (Lead-Free)

NG : 96G

ZG : 48G

L : ULGA (Lead-Free) (14*18)

M : tLGA N : tLGA2

00 : NoNe

P : tsoP1 (Lead-Free)

Q : tsoP2 (Lead-Free)

6~7. Organization

s : tsoP1 (Halogen-Free, Lead-Free)

t : tsoP2 U : CoB (MMC)

V : WsoP W : Wafer

00 : NoNe

08 : x8

16 : x16

Y : tsoP1 Z : WeLP (Lead-Free)

samsung.com/semi/ﬂash

1H 2011

Flash Ordering Information

Download from Www.Somanuals.com. All Manuals Search And Download.

HiGH-SPeed ASYncHronouS SrAM

Density

Organization Part Number

Package

Vcc (V)

Speed (ns) Operating

Temp.

Operating

Current (mA)

Standby

Current (uA)

Production

Status

K6R4016C1D

256Kx16

44-soJ, 44-tsoP2

36-soJ, 44-tsoP2

65, 55

80, 65

65, 55

80, 65

20, 5

Mass Production

K6R4016V1D

3.3

20, 5 (1.2)

20, 5

4Mb

K6R4008C1D

512Kx8

K6R4008V1D

3.3

20, 5

SYncHronouS SrAM SPB & SB

Density Organization

Part

Package

Operating Vdd

Access Time Cycle Time

I/O Voltage Production

Comments

Number

Mode

sPB

(V)

tCD (ns)

(MHz)

(V)

Status

K7A321830C

K7B321835C

K7A323630C

K7B323635C

K7A163630B

K7A163631B

K7B163635B

K7A161830B

K7A161831B

K7B161835B

K7A803609B

K7A803600B

K7B803625B

K7A801809B

K7A801800B

K7B801825B

K7A403609B

K7A403600B

K7B403625B

K7A403200B

K7A401809B

K7A401800B

K7B401825B

100-tQFP

3.3, 2.5

3.3

3.1

200

3.3, 2.5

3.3,2.5

3.3, 2.5

Mass Production

2e1D

2Mx18

36Mb

7.5

118

sPB

3.1

200

2e1D

1Mx36

7.5

118

sPB

2.6, 3.5

3.1

250, 167

200

2e1D

1Mx36

18Mb

2e2D

7.5

117

sPB

2.6, 3.5

3.1

250, 167

200

2e1D

1Mx18

2e2D

7.5

117

sPB

2.6

250

Not for new designs

2e1D

256Kx36

3.3

3.5

167

2e1D

3.3

6.5

133

8Mb

sPB

3.3

2.6

250

2e1D

512Kx18

3.3

3.5

167

2e1D

3.3

6.5

133

sPB

3.3

2.4

250

2e1D

3.3

3.5

167

2e1D

128Kx36

3.3

6.5

133

4Mb

sPB

3.3

3.5

167

2e1D

3.3

2.4

250

256Kx18

3.3

3.5

167

3.3

6.5

133

Notes:

All tQFP products are Lead Free

sPB speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz

2e1D = 2-cycle enable and 1-cycle Disable

2e2D = 2-cycle enable and 2-cycle Disable

sB speed recommendation: Use 7.5ns Access time; Use 6.5ns Access time

Asynchronous & Synchronous SDRAM

1H 2011

samsung.com/semi/sram

Download from Www.Somanuals.com. All Manuals Search And Download.

ntrAM

Type

Density Organization Part Number

Package

Operating Vdd (V)

Mode

Access Time Speed

I/O Voltage

Production Status

tCD (ns)

2.6, 3.5

7.5

tCYC (MHz) (V)

2Mx36

K7N643645M

K7N641845M

K7N323631C

K7N321831C

K7M323635C

K7M321835C

K7N161831B

K7N163631B

K7M161835B

K7M163635B

K7N803601B

K7N801801B

K7N803609B

K7N801809B

K7N803645B

K7N801845B

K7N803649B

K7N801849B

K7M801825B

K7M803625B

K7N403609B

K7N401809B

K7B401825B

100-tQFP

sPB

2.5

250, 167

118

2.5

Mass Production

72Mb

36Mb

4Mx18

100-tQFP

2.5

Mass Production

1Mx36

100-tQFP, 165FBGA

100-tQFP

3.3, 2.5

3.3

3.3, 2.5

3.3,2.5

2.5

Mass Production

2Mx18

Mass Production

1Mx36

Mass Production

2Mx18

100-tQFP

7.5

118

Mass Production

1Mx18

100-tQFP, 165FBGA

100-tQFP

sPB

Ft (sB)

sPB

2.6, 3.5

6.5

250, 167

133

Mass Production

512Kx36

1Mx18

Mass Production

18Mb

Mass Production

512Kx36

256Kx36

512Kx18

256Kx36

512Kx18

256Kx36

512Kx18

256Kx36

512Kx18

256Kx36

128Kx36

256Kx18

100-tQFP

3.3

6.5

133

Mass Production

100-tQFP

3.3

3.5

167

Not for new designs

NtRAM

100-tQFP

3.3

3.5

167

100-tQFP

3.3

2.6

250

100-tQFP

3.3

2.6

250

100-tQFP

2.5

3.5

167

8Mb

100-tQFP

2.5

3.5

167

2.5

100-tQFP

2.5

2.6

250

2.5

100-tQFP

2.5

2.6

250

2.5

100-tQFP

3.3

6.5

133

3.3, 2.5

3.3,2.5

3.3, 2.5

100-tQFP

3.3

6.5

133

100-tQFP

sPB

3.3

200

4Mb

sPB and Ft 4Mb

100-tQFP

3.3

200

100-tQFP

3.3

6.5

133

Notes:

All tQFP products are lead free

NtRAM speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz

NtRAM speed recommendation: Use 7.5ns Access time use 6.5ns Access time

Recommended sPB speeds are 250MHz and 167MHz Recommended sB Acess speed is 7.5ns

late-Write rr SrAM

Density Organization

Part Number

Package

Operating Vdd (V)

Mode

Access Time

tCD (ns)

Speed tCYC

I/O Voltage

(V)

Production Status

(MHz)

300,250

300

1Mx36

32Mb

K7P323674C

K7P321874C

K7P803611B

K7P801811B

K7P803666B

K7P801866B

119-BGA

1.8 / 2.5V

3.3

1.6, 2.0

1.5 (Max 1.8)

1.5 (Max.2.0)

Mass Production

2Mx18

1.6, 2.0

256Kx36

1.6

512Kx18

8Mb

3.3

300

256Kx36

2.5

250

512Kx18

2.5

250

samsung.com/semi/sram

1H 2011

NtRAM & Late Write RR SRAM

Download from Www.Somanuals.com. All Manuals Search And Download.

ddr SYncHronouS SrAM

Type

Density Organization Part Number Package

Vdd (V)

Access Time

tCD (ns)

Cycle Time

I/O Voltage Production

Comments

(V)

Status

512Kx36

1Mx18

K7D163674B 153-BGA

K7D161874B 153-BGA

K7D803671B 153-BGA

K7D801871B 153-BGA

1.8~2.5 2.3

330, 300

1.5~1.9

Mass Production

16Mb

8Mb

330, 300

DDR

256Kx36

512Kx18

2.5

1.7/1.9/2.1

333, 330, 250

1.5 (Max 2.0) Not for new designs

K7I641882M 165-FBGA 1.8

K7I641884M 165-FBGA 1.8

K7J641882M 165-FBGA 1.8

K7I643682M 165-FBGA 1.8

K7I643684M 165-FBGA 1.8

K7J643682M 165-FBGA 1.8

0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8

Mass Production

CIo-2B

CIo-4B

sIo-2B

CIo-2B

CIo-4B

sIo-2B

CIo-2B

CIo-4B

sIo-2B

CIo-2B

CIo-4B

sIo-2B

CIo-2B

CIo-4B

sIo-2B

CIo-2B

CIo-4B

4Mx18

2Mx36

2Mx18

1Mx36

1Mx18

512Kx36

72Mb

36Mb

18Mb

K7I321882C

K7I321884C

165-FBGA 1.8

0.45

300,250

1.5,1.8

K7J321882C 165-FBGA 1.8

DDR II

CIo/sIo

K7I323682C

K7I323684C

165-FBGA 1.8

K7J323682C 165-FBGA 1.8

K7I161882B

K7I161884B

165-FBGA 1.8

0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8

0.45,0.45,0.45,0.50 250,200,167 1.5,1.8

K7J161882B 165-FBGA 1.8

K7J163682B 165-FBGA 1.8

0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8

K7I163682B

K7I163684B

165-FBGA 1.8

0.45,0.45,0.45,0.50 250,200,167

1.5,1.8

DDRII + CIo-2B,

2 clocks latancy

K7K3218t2C 165-FBGA 1.8

K7K3218U2C 165-FBGA 1.8

K7K3236t2C 165-FBGA 1.8

K7K3236U2C 165-FBGA 1.8

K7K1618t2C 165-FBGA 1.8

K7K1618U2C 165-FBGA 1.8

K7K1636t2C 165-FBGA 1.8

0.45

400

1.5

Mass Production

2Mx18

1Mx36

DDRII + CIo-2B,

2.5 clocks latancy

400

2.5

1.5

2.5

1.5

2.5

1.5

36Mb

DDRII + CIo-2B,

2 clocks latancy

400, 333

400, 334

400, 333

400, 334

400, 333

DDR II+

DDRII + CIo-2B,

2.5clocks latancy

CIo

DDRII + CIo-2B,

2 clocks latancy

1Mx18

DDRII + CIo-2B,

2.5clocks latancy

18Mb

DDRII + CIo-2B,

2 clocks latancy

512Kx36

Notes:

2B = Burst of 2

4B = Burst of 4

For DDR II CIo/sIo: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit

For DDR II+ CIo: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz

sIo = separate I/o

CIo = Common I/o

DDR I / II / II+

1H 2011

samsung.com/semi/sram

Download from Www.Somanuals.com. All Manuals Search And Download.

Qdr SYncHronouS SrAM

Type

Density Organization Part

Number

Package

Vdd

(V)

Access Time

tCD (ns)

Cycle Time

I/O Voltage Production

Comments

(V)

Status

K7Q161862B

K7Q161864B

K7Q163662B

K7Q163664B

K7R640982M

K7R641882M

K7R641884M

K7R643682M

K7R643684M

K7R320982C

K7R321882C

K7R321884C

K7R323682C

K7R323684C

K7R160982B

K7R161882B

K7R161884B

K7R163682B

K7R163684B

165-FBGA 1.8v / 2.5v 2.5

167

1.5,1.8

Mass Production

QDR I - 2B

QDR I - 4B

QDR I - 2B

QDR I - 4B

QDR II-2B

QDR II-4B

QDR II-2B

QDR II-4B

QDR II-2B

QDR II-4B

QDR II-2B

QDR II-4B

QDR II - 2B

QDR II - 4B

QDR II - 2B

QDR II - 4B

1Mx18

167

QDR I

18Mb

72Mb

167

512Kx36

8Mx9

167

165-FBGA 1.8

0.45,0.45,0.50

250,200,167

4Mx18

0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8

0.45,0.45,0.50 250,200,167 1.5,1.8

0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8

2Mx36

4Mx9

0.45

167, 250, 200

200, 300, 250

300, 250, 200

200, 300, 250

250,200,167

1.5,1.8

0.45

2Mx18

QDR II 36Mb

0.45

1Mx36

2Mx9

0.45

0.45,0.45,0.50

1Mx18

18Mb

0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8

0.45,0.45,0.50 250,200,167 1.5,1.8

0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8

512Kx36

1Mx36

QDR II + 4B,

2 clocks latancy

K7s3236t4C

K7s3236U4C

K7s3218t4C

K7s3218U4C

K7s1618t4C

K7s1636U4C

165-FBGA 1.8

0.45

400

1.5

2.5

1.5

Mass Production

QDR II + 4B,

2.5 clocks latancy

400

36Mb

QDR II + 4B,

2 clocks latancy

400

QDR II+

2Mx18

QDR II + 4B,

2.5 clocks latancy

400

QDR II + 4B,

2 clocks latancy

1Mx18

400, 333

18Mb

QDR II + 4B,

2.5 clocks latancy

512Kx36

Notes: For QDR I, QDR II: 2B = Burst of 2, 4B = Burst of 4

For QDR II (36Mb): C-die use 300, 250MHz or 200MHz instead of 167MHz using a stable DLL circuit

For QDR II (72Mb): 2B = Burst of 2 and 250MHz or 200MHz is recommended, 4B = Burst of 4 and 300MHz or 250MHz is recommended

For QDR II+: 2-clock latency supported. 2.5-clock latency can be supported with 450MHz speed

samsung.com/semi/sram

1H 2011

QDR I / II / II+

Download from Www.Somanuals.com. All Manuals Search And Download.

SYncHronouS SrAM orderinG inForMAtion

SAMSUNG Memory

Packaging Type

Speed

Sync SRAM

Small Classiﬁcation

Density

Speed

Temp, Power

Package

---

Density

Organization

Vcc, Interface, Mode

Generation

Vcc, Interface, Mode

49: 2.5V,LVttL,Hi sPeeD

WAFER, CHIP BIZ Level Division

0: NoNe,NoNe

1. Memory (K)

52: 2.5V,1.5/1.8V,HstL,Burst2

54: 2.5V,1.5/1.8V,HstL,Burst4

62: 2.5V/1.8V,HstL,Burst2

64: 2.5V/1.8V,HstL,Burst4

66: 2.5V,HstL,R-R

2. Sync SRAM: 7

3. Small Classification

1: Hot DC sort

2: Hot DC, selected AC sort

14~15. Speed

A: sync Pipelined Burst

B: sync Burst

74: 1.8V,2.5V,HstL,All

Sync Burst,Sync Burst + NtRAM

82: 1.8V,HstL,Burst2

D: Double Data Rate

< Mode is R-L > (Clock Accesss time)

84: 1.8V,HstL,Burst4

I: Double Data Rate II, Common I/o

J: Double Data Rate, separate I/o

K: Double Data II+, Common I/o

M: sync Burst + NtRAM

N: sync Pipelined Burst + NtRAM

P: sync Pipe

65: 6.5ns

75: 7.5ns

85: 8.5ns

70: 7ns

88: 1.8V,HstL,R-R

80: 8ns

t2: 1.8V,2Clock Latency,Burst2

t4: 1.8V,2Clock Latency,Burst4

U2: 1.8V,2.5Clock Latency,Burst2

U4: 1.8V,2.5Clock Latency,Burst4

Other Small Classification (Clock Cycle Time)

10: 100MHz

11: 117MHz

14: 138MHz

20: 200MHz

13: 133MHz

Q: Quad Data Rate I

10. Generation

16: 166MHz

R: Quad Data Rate II

25: 250MHz

M: 1st Generation

A: 2nd Generation

B: 3rd Generation

C: 4th Generation

D: 5th Generation

s: Quad Data Rate II+

26: 250MHz(1.75ns)

30: 300MHz

27: 275MHz

33: 333MHz

37: 375MHz

42: 425MHz

4~5. Density

35: 350MHz

80: 8M

40: 4M

64: 72M

16: 18M

40: 400MHz(t-CYCLe)

45: 450MHz

32: 36M

11. “--”

50: 500MHz (except sync Pipe)

6~7. Organization

16. Packing Type (16 digit)

12. Package

08: x8

09: x9

- Common to all products, except of Mask RoM

- Divided into tAPe & ReeL (In Mask RoM,

divided into tRAY, AMMo packing separately)

H: BGA,FCBGA,PBGA

G: BGA, FCBGA, FBGA (LF)

F: FBGA

18: x18

36: x36

32: x32

8~9. Vcc, Interface, Mode

e: FBGA (LF)

Type

Packing Type

New Marking

Q: (L)QPF

00: 3.3V,LVttL,2e1D WIDe

01: 3.3V,LVttL,2e2D WIDe

08: 3.3V,LVttL,2e2D Hi sPeeD

09: 3.3V,LVttL,Hi sPeeD

11: 3.3V,HstL,R-R

Component tAPe & ReeL

P: (L)QFP(LF)

C: CHIP BIZ

other (tray, tube, Jar) 0 (Number)

stack

W: WAFeR

Component tRAY

(Mask RoM) AMMo PACKING

13. Temp, Power

12: 3.3V,HstL,R-L

Module

MoDULe tAPe & ReeL P

14: 3.3V,HstL,R-R Fixed ZQ

22: 3.3V,LVttL,R-R

COMMON (Temp,Power)

MoDULe other Packing M

0: NoNe,NoNe (Containing of error

handling code)

23: 3.3V,LVttL,R-L

25: 3.3V,LVttL,sB-Ft WIDe

30: 1.8/2.5/3.3V,LVttL,2e1D

31: 1.8/2.5/3.3V,LVttL,2e2D

35: 1.8/2.5/3.3V,LVttL,sB-Ft

44: 2.5V,LVttL,2e1D

C: Commercial,Normal

e: extended,Normal

I: Industrial,Normal

45: 2.5V,LVttL,2e2D

SRAM Ordering Information

1H 2011

samsung.com/semi/sram

Download from Www.Somanuals.com. All Manuals Search And Download.

McP: nAnd + Mddr

Memory

NAND Density

DRAM Density/Organization

256/512Mb (x16)

512Mb (x32)

Voltage (NAND-DRAM)

1.8V - 1.8V

Package

130/137FBGA

137FBGA

1Gb (x16)

2Gb (x16)

1.8V - 1.8V

1Gb (x16,x32)

1.8V - 1.8V

130/137FBGA

137FBGA

2Gb (x32)

1.8V - 1.8V

NAND & MDRAM

4Gb (x16)

2Gb*2 (x32, 2Cs/2CKe)

2Gb*2 (x32)

1.8V - 1.8V

137FBGA

1.8V - 1.8V

240FBGA PoP

137FBGA

4Gb*2 (x16)

8Gb (x16)

2Gb*2 (x32, 2Cs/2CKe)

2Gb*2 (x32)

1.8V - 1.8V

240FGBA PoP

McP: movinAnd + lPddr2

Memory

moviNAND Density

DRAM Density/Organization

Voltage

Package

2Gb*2 (x32, 1ch, 2Cs)

4Gb*2 (x32, 1ch, 2Cs)

2Gb*2 (x32, 1ch, 2Cs)

4Gb*2 (x32, 1ch, 2Cs)

1.8V - 1.8V

186FBGA/162FBGA

186FBGA

4GB

8GB

moviNAND & MDRAM

186FBGA

16GB

186FBGA

McP: nor + utrAM

Memory

NOR Density

UtRAM Density/Organization

Voltage

MCP Package

512Mb (Mux)

512Mb (Demux)

256Mb (Mux)

256Mb (Demux)

128Mb (Mux)

128Mb (Demux)

256Mb

128Mb

64Mb

1.8V - 1.8V

56FBGA

84FBGA

56FBGA

52FBGA

84FBGA

NOR & UtRAM

samsung.com/semi/mcp

1H 2011

Multi-Chip Packages

Download from Www.Somanuals.com. All Manuals Search And Download.

3.5" HArd diSK driVeS

Family

Capacity (GB)

RPM

7200

5400

7200

5400

7200

Interface

Buffer

Sector

512

Model

160

sAtA 3.0 Gbps

sAtA 3.1 Gbps

sAtA 3.2 Gbps

sAtA 3.3 Gbps

sAtA 3.4 Gbps

sAtA 3.5 Gbps

sAtA 3.6 Gbps

sAtA 3.0 Gbps

HD165GJ

HD166GJ

HD255GJ

HD256GJ

HD322GJ

HD155UI

HD204UI

HD164GJ

HD254GJ

HD324HJ

HD163GJ

HD253GJ

HD323HJ

HD502HJ

HD103sJ

HD253GI

HD503HI

HD105sI

HD502HI

HD103sI

HD154UI

HD161GJ

HD251HJ

HD321HJ

HD322HJ

HD103UJ

HD754JI

HD105sI

HD153WI

HD203WI

160

250

320

1500

2000

160

F4eG-3

512

250

320

160

250

320

500

1tB

250

ecoGreen F3

500

1 tB

500

ecoGreen F2 (F2eG)

1 tB

1.5 tB

160

F1Dt

250

320

1 tB

750

1tB

F3eG

1.5 tB

2 tB

Hard Disk Drives

1H 2011

Download from Www.Somanuals.com. All Manuals Search And Download.

samsung.com/hdd

2.5" HArd diSK driVeS

Family

Capacity (GB)

RPM

5400

7200

5400

Interface

Buffer

Sector

512

Model

160

UsB 2.0

HM162HX

HM252HX

HM322IX

HM502JX

HM161GI

HM251HI

HM321HI

HM501II

250

UsB 2.0

M7U

320

UsB 2.0

500

UsB 2.0

160

sAtA 3.0 Gbps

250

M7e

320

500

640

HM641JI

HM161HI

HM250HI

HM320II

160

250

320

400

HM400JI

HM500JI

HM750LI

HM100UI

HM250HJ

HM320HJ

HM500JJ

HM640JJ

HM160HC

HM160HI

HM031HC

500

750

Mt2

MP4

1000

250

320

500

640

M5P

160

PAtA

512

M5s

160

sAtA 1.5 Gbps

PAtA

MC30

Solid StAte driVeS (SSd)

Interface

Size

Connector

Controller

Component

Density

Part Number

64GB

MZ7PA064HMCD-01000

MZ7PA128HMCD-01000

MZ7PA256HMDR-01000

MZ5PA064HMCD-01000

MZ5PA128HMCD-01000

MZ5PA256HMDR-01000

MZMPA032HMCD-00000

MZMPA064HMDR-00000

MZMPA128HMFU-00000

2.5"

7mmt

thin sAtA

PCle

PM810

16Gb

128GB

256GB

64GB

2.5"

9.5mmt

sAtA II - MLC

16Gb

128GB

256GB

32GB

msAtA

64GB

128GB

Please contact your local samsung sales representative for latest product offerings

Note: All parts are lead free

samsung.com/hdd | samsung.com/greenmemory

1H 2011

Hard Disk Drives & Solid State Drives

Download from Www.Somanuals.com. All Manuals Search And Download.

Blu-rAY H/H

Interface

Speed

Type

Lightscribe

Model

ts-HB43A / sH-B123A

ts-HB43L / sH-B123L

sAtA

BD Combo 12X

H/H

tray

Blu-rAY SliM

Interface

Speed

Type

Lightscribe

Model

sN-B043D

sN-B043P

sAtA

BD Combo 4X

slim

tray

Blu-rAY coMBo SliM externAl

Interface

Speed

Type

Lightscribe

Model

se-406AB

UsB 2.0

BD Combo 6X

slim

tray

dVd-W H/H

Interface

Speed

Type

Lightscribe

Model

PAtA

sAtA

PAtA

sAtA

DVD Write 22X

H/H

tray

ts-H662A / sH-s222A

ts-H663C / sH-s223C

ts-H662L / sH-s222L

ts-H663L / sH-s223L

sH-222AB

dVd-W Slim

Interface

Speed

Type

Lightscribe

Model

ts-L633F / sN-s083F

ts-L633J

tray

sAtA

DVD Write 8X

slim

ts-L633R / sN-s083R

ts-t633P

slot

dVd-W SliM externAl

Interface

Speed

Type

Lightscribe

Model

Ultra slim

tray

se-s084D

UsB 2.0

DVD Write 8X

se-s084F

slim

dVd-roM

Interface

Speed

Type

Lightscribe

Model

DVD 16X

DVD 8X

H/H

tray

sH-D163C

ts-L333H

sAtA

slim

dVd-W loAder

Interface

Speed

Type

Lightscribe

Model

ts-P632F

PAtA

DVD 8X

H/H

tray

Optical Disk Drives

1H 2011

samsungodd.com

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DID Product Classification

outdoor: HiGH luMinAnce

SuPer nArroW

PAnorAMic diSPlAY

e-did: exclusive did

P-did: Performance did

B-did: Basic did

» 1500 – 2000nit

nArroW

» narrow

WAll-Mounted

» thin/light

» (edge led)

lArGe ForMAt diSPlAY

» 70” / 82”

» Black Bezel

lAndScAPe / PortrAit conVertiBle

Why DID Instead of TV?

Commercial (DID)

Consumer (TV)

Warranty

Reliability

18 months to 2 years

90 days to 1 year

Designed for continuous use in different environments

Turned on for 20 hours +

Designed for in-home use in controlled environment

Turned on for 6-8 hours

Variety of temperatures & location

In-home living room

Designed for PC signals

Designed for vable TV signals

Picture Quality

Location

LCD backlight covers a wider color spectrum necessary for PC source

integration giving better picture quality

Have cooler color temperature settings producing blue/white image

displaying less color accuracy

Can be oriented in either portrait or landscape mode

Can only be oriented in portrait mode

Product Segmentation

HEAVY USE

e-did: exclusive

Professional

outdoor events

Billboard

» All Features of P-did

» Specialty: SnB, Panoramic,

High Brightness

• Control Room

• simulation

• scoreboard

• sports

Broadcasting

• Billboard

» robust design

entertainment

transportation

communication

rental

P-did: Performance

» All Features of B-did

• Casino

• theatre

• Poster

• Menu

• Airport

• train/Bus station

• Conference Room

• Rental

• staging

» narrow & Black Bezel

» typ. Brightness: 700 (cd/m2)

B-did: Basic

» landscape/Portrait

» High reliability

» Pol. (Haze 44%)

commercial

education

• Kiosk

• Mart Board

• e-Board

» long lifetime: More than 2 Years

LIGHT USE

Product Segmentation

Suggested

Run Time

Type

Abbr

Warranty

Bezel

Brightness

Usage

Applications

Pricing

Narrow and

Super Narrow

Outdoor, Video Walls,

Panormaic

E-DID Exclusive

2 years

20 hours +

450 to 2000 nits Heavy

600/700 nits Medium

Light

High-price Range

Mid-price Range

P-DID Performance 2 years

Narrow

Semi-Outdoor

Indoor, e-Board

B-DID Basic

18 months Normal

14-16 hours 450 nits

Low-price Range; Comperable to Consumer Panels

tftlcd.com

1H 2011

LCD

Download from Www.Somanuals.com. All Manuals Search And Download.

SAMSunG diGitAl inForMAtion diSPlAY (did) PAnel lineuP

Current

Model

resolution

Brightness Contrast

Response

Time

Type

New Model Size

Bezel

Backlight

Frequency MP*

Comment

(typical)

Ratio

LtI430LA01-0

43"

1920X480 Narrow

CCFL

700 nits

3,000:1

8ms

60Hz

Now

Panoramic

LtI430LA02 43"

e-LeD

450 nits

6ms

2011. Q2

Narrow +

Black

LtI460AA03

LtI460AA04

LtI460AA05

46"

CCFL

D-LeD

1500 nits

700 nits

450 nits

700 nits

3,000:1

4,000:1

3,000:1

8ms

tBD

60Hz

Now

High bright

super

narrow

7.3mm

Active to Active

Now

e-DID

super

narrow

7.3mm

Active to Active

Now

super

narrow

5.7mm

Active to Active

LtI550HN01 55"

FHD

2011. Q2

LtI700HD02

LtI400HA02

70"

40"

FHD

Normal

Narrow

D-LeD

2000 nits

2,500:1

3,000:1

8ms

60Hz

Now

High Bright

CCFL

700 nits

8ms

Narrow +

Black

LtI400HA03

LtI460HA02

LtI460HA03

40"

FHD

CCFL

700 nits

3,000:1

3,500:1

8ms

60Hz

Now

46"

Narrow

Narrow +

Black

P-DID

LtI460HJ01 46"

FHD

Narrow

Normal

e-LeD

CCFL

e-LeD

CCFL

600 nits

700 nits

600 nits

450 nits

3,000:1

4,000:1

2,000:1

4,000:1

3,500:1

4,000:1

3,000:1

10ms

8ms

10ms

8ms

120Hz

60Hz

120Hz

60Hz

2011. Q2

Now

LtI550HF02

55"

LtI550HJ02 55"

2011. Q2

Now

LtI700HD01

LtI820Ht-L01

LtI260AP01

LtI320AA02

LtI400HA01

LtI460HM01

70"

82"

26"

Now

LtI320AP02 32"

2011. Q2

Now

40"

46"

FHD

Now

B-DID

e-Board; Landscape

mode only

LtI700HD03

LtI820HD03

70"

82"

FHD

Normal

CCFL

450 nits

2,000:1

8ms

60Hz

Now

e-Board; Landscape

mode only

450 nits

8ms

Notes: HD = 1366 x 768

FHD = 1920 x 1080

*MP Date subject to change

Please contact your local samsung Rep for more information.

LCD

1H 2011

Download from Www.Somanuals.com. All Manuals Search And Download.

tftlcd.com

tABletS

Brightness

(nits)

Size

Mode

Resolution

H(RGB)

Aspect Ratio

PPI

LtN070NL01

PLs

WsVGA

WXGA

XGA

1024

1280

1024

1280

600

800

768

800

17:10

16:10

4:3

170

216

132

149

400

300

400

Now

June, 2011

April, 2011

June, 2011

9.7

10.1

LtN097LX01-H01

LtN101AL02-P01

WXGA

16:10

noteBooKS / PerSonAl coMPuterS

Brightness

(nits)

Size

Mode

Resolution

H(RGB)

Aspect Ratio PPI

LtN101Nt06

LtN101At03

LtN116At

LtN125At

LtN133At

LtN140At

LtN140Kt

LtN156At

LtN156Kt

LtN156Ht

LtN173Kt01

WsVGA

1024

1366

1600

1366

1600

1920

1600

600

768

900

768

900

1080

900

17:10

16:9

118

155

135

125

118

112

131

100

118

141

106

200

250

200

250

300

200

Now

tBD

Now

tBD

Now

tBD

Now

10.1

11.6

12.5

13.3

HD+

15.6

17.3

HD+

FHD

HD+

MonitorS

Brightness

(nits)

Size

Mode

Resolution

H(RGB)

Aspect Ratio

PPI

LtM170et01

LtM185At01

LtM185At04

LtM200Kt03

LtM200Kt07

LtM220Mt05

LtM230HP01

LtM230Ht01

LtM230Ht05

LtM240Ct04

LtM240CL01

LtM270Ht03

LtM270DL02

PVA

PLs

sXGA

1280

1366

1600

1680

1920

2560

1024

768

5:4

109

250

300

Now

16:9

16:10

16:9

16:10

16:9

Now

18.5

768

Now

HD+

900

Now

HD+

900

Now

WsXGA+

FHD

1050

1080

1200

1080

1440

Now

FHD

Now

FHD

Now

WUXGA

FHD

Now

May, 2011

Now

QHD

May, 2011

tftlcd.com

1H 2011

Tablets / Notebooks / Personal Computers / Monitors

Download from Www.Somanuals.com. All Manuals Search And Download.

MeMorY

DRAM

Flash

SRAM

MCP

SYSteM lSi

ASICs

APs

Display Drivers

Imaging ICs

Foundry

StorAGe

Solid State Drives

Hard Drives

Optical Disc Drives

lcd PAnelS

Displays

Monitors

Smartphones

Tablets

TVs

samsung.com/us/business/oem-solutions

Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of

publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences

resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products

or product speciﬁcations with the intent to improve function or design at any time and without notice and is not required

to update this documentation to reﬂect such changes. This publication does not convey to a purchaser of semiconductor

devices described herein any license under the patent rights of Samsung or others. Samsung makes no warranty,

representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Samsung assume

any liability arising out of the application or use of any product or circuit and speciﬁcally disclaims any and all liability,

including without limitation any consequential or incidental damages.

Samsung Semiconductor, Inc.

3655 North First Street

San Jose, CA 95134-1713

Ltd. All other names and brands may be claimed as the property of others. The appearance of all products, dates, ﬁgures,

diagrams and tables are subject to change at any time, without notice.

BR-11-ALL-001 Printed 03/11

Download from Www.Somanuals.com. All Manuals Search And Download.

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