Philips Stereo Amplifier TDA2616 User Manual

INTEGRATED CIRCUITS  
DATA SHEET  
TDA2616/TDA2616Q  
2 x 12 W hi-fi audio power  
amplifiers with mute  
July 1994  
Product specification  
File under Integrated Circuits, IC01  
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Philips Semiconductors  
Product specification  
2 x 12 W hi-fi audio power amplifiers with  
mute  
TDA2616/TDA2616Q  
+ V  
P
7
V
A
TDA2616  
V
ref1  
20 k  
CM  
680 Ω  
V
B
1
INV1  
20 kΩ  
4
OUT1  
4 kΩ  
2
MUTE  
– V  
P
5 kΩ  
+ V  
P
V
ref3  
10 kΩ  
+ V  
P
V
+ V  
ref2  
THERMAL  
PROTECTION  
V
ref1  
3
1/2 V / GND  
P
voltage  
comparator  
V
B
10 kΩ  
– V  
A
ref2  
– V  
– V  
P
P
20 kΩ  
6
OUT2  
9
8
CM  
INV2  
680 Ω  
V
B
INV1, 2  
20 kΩ  
V
ref1  
V
A
5
MCD375 - 1  
– V  
P
Fig.1 Block diagram.  
3
July 1994  
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Philips Semiconductors  
Product specification  
2 x 12 W hi-fi audio power amplifiers with  
mute  
TDA2616/TDA2616Q  
PINNING  
SYMBOL  
FUNCTIONAL DESCRIPTION  
The TDA2616 is a hi-fi stereo amplifier designed for mains  
fed applications, such as stereo radio and TV. The circuit  
is optimally designed for symmetrical power supplies, but  
is also well-suited to asymmetrical power supply systems.  
PIN  
DESCRIPTION  
non-inverting input 1  
INV1  
MUTE  
1/2VP/GND  
OUT1  
VP  
1
2
3
4
5
6
7
8
9
mute input  
1/2 supply voltage or ground  
output 1  
An output power of 2 × 12 W (THD = 0.5%) can be  
delivered into an 8 load with a symmetrical power supply  
of ±16 V. The gain is internally fixed at 30 dB, thus offering  
a low gain spread and a very good gain balance between  
the two amplifiers (0.2 dB).  
supply voltage (negative)  
output 2  
OUT2  
+VP  
supply voltage (positive)  
inverting inputs 1 and 2  
non-inverting input 2  
A special feature is the input mute circuit. This circuit  
disconnects the non-inverting inputs when the supply  
voltage drops below ±6 V, while the amplifier still retains its  
DC operating adjustment. The circuit features suppression  
of unwanted signals at the inputs, during switch-on and  
switch-off.  
INV1, 2  
INV2  
handbook, halfpage  
INV1  
1
The mute circuit can also be activated via pin 2. When a  
current of 300 µA is present at pin 2, the circuit is in the  
mute condition.  
MUTE  
2
3
4
5
6
7
8
9
1/2 V / GND  
P
The device is provided with two thermal protection circuits.  
One circuit measures the average temperature of the  
crystal and the other measures the momentary  
temperature of the power transistors. These control  
circuits attack at temperatures in excess of +150 °C, so a  
crystal operating temperature of max. +150 °C can be  
used without extra distortion.  
OUT1  
V
P
TDA2616  
OUT2  
+ V  
P
INV1, 2  
INV2  
With the derating value of 2.5 K/W, the heatsink can be  
calculated as follows:  
MCD372 - 1  
at RL = 8 and VP = ±16 V, the measured maximum  
dissipation is 14.6 W.  
Fig.2 Pin configuration.  
With a maximum ambient temperature of +65 °C, the  
thermal resistance of the heatsink is:  
150 65  
Rth  
=
2.5 = 3.3 K/W.  
----------------------  
14.6  
The internal metal block has the same potential as pin 5.  
July 1994  
4
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Philips Semiconductors  
Product specification  
2 x 12 W hi-fi audio power amplifiers with  
mute  
TDA2616/TDA2616Q  
LIMITING VALUES  
In accordance with the Absolute maximum System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
21  
UNIT  
±VP  
IOSM  
Ptot  
supply voltage  
55  
V
non-repetitive peak output current  
total power dissipation  
4
A
see Fig.3  
25  
W
°C  
°C  
°C  
h
Tstg  
TXTAL  
Tamb  
tsc  
storage temperature range  
crystal temperature  
+150  
+150  
150  
1
ambient operating temperature range  
short circuit time  
25  
short-circuit to ground; note 1  
Note to the limiting values  
1. For asymmetrical power supplies (with the load short-circuited), the maximum unloaded supply voltage is limited to  
VP = 28 V and with an internal supply resistance of RS 4 , the maximum unloaded supply voltage is limited to 32 V  
(with the load short-circuited). For symmetrical power supplies the circuit is short-circuit-proof up to VP = ±21 V.  
MCD376 - 2  
32  
handbook, halfpage  
P
tot  
(W)  
24  
infinite  
heatsink  
16  
R
= 3.3 K/W  
th-hs  
8
0
– 25  
0
50  
100  
T
150  
C)  
o
(
amb  
Fig.3 Power derating curve.  
THERMAL RESISTANCE  
SYMBOL  
PARAMETER  
from junction to ambient in free air  
THERMAL RESISTANCE  
Rth j-a  
2.5 K/W  
July 1994  
5
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Philips Semiconductors  
Product specification  
2 x 12 W hi-fi audio power amplifiers with  
mute  
TDA2616/TDA2616Q  
CHARACTERISTICS  
SYMBOL  
Supply  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX. UNIT  
±VP  
IORM  
supply voltage range  
repetitive peak output current  
16  
21  
V
A
2.2  
Operating position; note 1  
±VP  
IP  
supply voltage range  
total quiescent current  
output power  
7.5  
18  
16  
40  
21  
70  
V
RL = ∞  
mA  
PO  
THD = 0.5%  
THD = 10%  
10  
12  
12  
0.2  
W
W
%
15  
THD  
B
total harmonic distortion  
power bandwidth  
PO = 6 W  
0.15  
THD = 0.5%; note 2  
20 to  
20 000  
Hz  
Gv  
voltage gain  
29  
14  
40  
46  
30  
0.2  
70  
20  
60  
70  
0.3  
30  
4
31  
1
dB  
dB  
µV  
kΩ  
dB  
dB  
µA  
mV  
mV  
Gv  
gain unbalance  
Vno  
noise output voltage  
input impedance  
note 3  
140  
26  
Zi  
SVRR  
α
Ibias  
VGND  
V4-6  
supply voltage ripple rejection  
channel separation  
input bias current  
note 4  
RS = 0  
DC output offset voltage  
DC output offset voltage  
200  
150  
between two channels  
MUTE POSITION (AT IMUTE 300 µA)  
VO  
output voltage  
VI = 600 mV  
note 7  
0.3  
9
1.0  
11.3  
70  
mV  
kΩ  
mA  
µV  
Z2-7  
mute input impedance  
total quiescent current  
noise output voltage  
supply voltage ripple rejection  
DC output offset voltage  
6.7  
18  
40  
IP  
RL = ∞  
note 3  
40  
70  
55  
40  
4
Vno  
140  
200  
150  
SVRR  
VGND  
Voff  
note 4  
dB  
mV  
mV  
offset voltage with respect to operating  
position  
I2  
current if pin 2 is connected to pin 5  
8.2  
mA  
Mute position; note 5  
±VP  
IP  
supply voltage range  
2
5.8  
40  
V
total quiescent current  
output voltage  
RL = ∞  
VI = 600 mV  
note 3  
9
30  
0.3  
70  
55  
mA  
mV  
µV  
dB  
VO  
40  
1.0  
140  
Vno  
SVRR  
noise output voltage  
supply voltage ripple rejection  
note 4  
July 1994  
6
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Philips Semiconductors  
Product specification  
2 x 12 W hi-fi audio power amplifiers with  
mute  
TDA2616/TDA2616Q  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX. UNIT  
VGND  
DC output offset voltage  
40  
40  
200  
mV  
Operating position; note 6  
IP  
total quiescent current  
18  
70  
mA  
PO  
output power  
THD = 0.5%  
5
6
0.2  
W
W
W
W
%
THD = 10%  
6.5  
8
THD = 0.5%; RL = 4 Ω  
THD = 10%; RL = 4 Ω  
PO = 4 W  
10  
14  
THD  
B
total harmonic distortion  
power bandwidth  
0.13  
THD = 0.5%; note 2  
40 to  
20 000  
Hz  
Gv  
voltage gain  
29  
14  
35  
30  
0.2  
70  
20  
44  
45  
31  
1
dB  
dB  
µV  
kΩ  
dB  
dB  
Gv  
gain unbalance  
Vno  
Zi  
noise output voltage  
input impedance  
note 3  
140  
26  
SVRR  
α
supply voltage ripple rejection  
channel separation  
MUTE POSITION (IMUTE 300 µA)  
VO  
output voltage  
VI = 600 mV  
note 7  
0.3  
9
1.0  
11.3  
70  
mV  
kΩ  
mA  
µV  
Z2-7  
IP  
mute input impedance  
total quiescent current  
noise output voltage  
supply voltage ripple rejection  
6.7  
18  
35  
40  
70  
44  
4
Vno  
note 3  
note 4  
140  
SVRR  
Voff  
dB  
offset voltage with respect to operating  
position  
150  
mV  
I2  
current if pin 2 is connected to pin 5  
8.2  
mA  
Notes to the characteristics  
1. VP = ±16 V; RL = 8 ; Tamb = 25 °C; f = 1 kHz; symmetrical power supply IMUTE < 30 µA. See Fig.4  
2. The power bandwidth is measured at an output power of PO max 3 dB  
3. The noise output voltage (RMS value) is measured at RS = 2 k, unweighted (20 Hz to 20 kHz)  
4. The ripple rejection is measured at RS = 0 and f = 100 Hz to 20 kHz. The ripple voltage (200 mV) is applied in phase  
to the positive and the negative supply rails. With asymmetrical power supplies, the ripple rejection is measured at  
f = 1 kHz  
5. ±VP = 4 V; RL = 8 ; Tamb = 25 °C; f = 1 kHz; symmetrical power supply. See Fig.4  
6. VP = 24 V; RL = 8 ; Tamb = 25 °C; f = 1 kHz; asymmetrical power supply IMUTE < 30 µA. See Fig.5  
7. The internal network at pin 2 is a resistor devider of typical 4 kand 5 kto the positive supply rail. At the connection  
of the 4 kand 5 kresistor a zener diode of typical 6.6 V is also connected to the positive supply rail. The spread  
of the zener voltage is 6.1 to 7.1 V.  
July 1994  
7
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Philips Semiconductors  
Product specification  
2 x 12 W hi-fi audio power amplifiers with  
mute  
TDA2616/TDA2616Q  
mute input  
+ V  
P
2200 µF  
2
7
680 Ω  
20 kΩ  
4
220 nF  
1
3
9
V
I
22 nF  
20 kΩ  
TDA2616  
8.2 Ω  
R
= 8 Ω  
L
20 kΩ  
100 nF  
220 nF  
V
I
6
22 nF  
680 Ω  
20 kΩ  
8
8.2 Ω  
R
= 8 Ω  
L
5
– V  
P
MCD374 - 3  
2200 µF  
Fig.4 Test and application circuit with symmetrical power supply.  
July 1994  
8
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Philips Semiconductors  
Product specification  
2 x 12 W hi-fi audio power amplifiers with  
mute  
TDA2616/TDA2616Q  
R
S
V
P
V
S
mute input  
100 nF  
2200 µF  
2
7
680 Ω  
20 kΩ  
4
220 nF  
1
3
V
I
22 nF  
680 µF  
20 kΩ  
8.2 Ω  
R
= 8 Ω  
L
internal  
1/2 V  
TDA2616  
100 µF  
P
20 kΩ  
220 nF  
9
8
V
I
6
22 nF  
680 µF  
680 Ω  
20 kΩ  
8.2 Ω  
R
= 8 Ω  
L
5
MCD373 - 2  
Fig.5 Test and application circuit with asymmetrical power supply.  
July 1994  
9
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Philips Semiconductors  
Product specification  
2 x 12 W hi-fi audio power amplifiers with  
mute  
TDA2616/TDA2616Q  
PACKAGE OUTLINES  
SIL9P: plastic single in-line power package; 9 leads  
SOT131-2  
non-concave  
x
D
h
D
E
h
view B: mounting base side  
d
A
2
B
E
j
A
1
b
L
c
1
9
e
Q
w
M
Z
b
p
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
max.  
b
max.  
1
(1)  
(1)  
(1)  
UNIT  
A
b
c
D
d
D
E
e
E
j
L
Q
w
x
Z
2
p
h
h
4.6  
4.2  
0.75  
0.60  
0.48  
0.38  
24.0  
23.6  
20.0  
19.6  
12.2  
11.8  
3.4  
3.1  
17.2  
16.5  
2.00  
1.45  
2.1  
1.8  
6
mm  
2.0  
1.1  
10  
2.54  
0.25  
0.03  
Note  
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
92-11-17  
95-03-11  
SOT131-2  
July 1994  
10  
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Philips Semiconductors  
Product specification  
2 x 12 W hi-fi audio power amplifiers with  
mute  
TDA2616/TDA2616Q  
DBS9P: plastic DIL-bent-SIL power package; 9 leads (lead length 12 mm)  
SOT157-2  
non-concave  
D
h
x
D
E
h
view B: mounting base side  
d
A
2
B
j
E
A
L
3
L
Q
c
1
9
e
e
m
v
M
w
M
1
Z
2
b
p
e
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
(1)  
(1)  
UNIT  
A
A
b
c
D
d
D
E
e
e
e
E
j
L
L
3
m
Q
v
w
x
Z
2
p
h
1
2
h
17.0 4.6 0.75 0.48 24.0 20.0  
15.5 4.2 0.60 0.38 23.6 19.6  
12.2  
11.8  
3.4 12.4 2.4  
3.1 11.0 1.6  
2.00  
1.45  
2.1  
1.8  
6
mm  
10  
5.08 2.54 5.08  
4.3  
0.8 0.25 0.03  
Note  
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
92-10-12  
95-03-11  
SOT157-2  
July 1994  
11  
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Philips Semiconductors  
Product specification  
2 x 12 W hi-fi audio power amplifiers with  
mute  
TDA2616/TDA2616Q  
The device may be mounted up to the seating plane, but  
the temperature of the plastic body must not exceed the  
specified maximum storage temperature (Tstg max). If the  
printed-circuit board has been pre-heated, forced cooling  
may be necessary immediately after soldering to keep the  
temperature within the permissible limit.  
SOLDERING  
Introduction  
There is no soldering method that is ideal for all IC  
packages. Wave soldering is often preferred when  
through-hole and surface mounted components are mixed  
on one printed-circuit board. However, wave soldering is  
not always suitable for surface mounted ICs, or for  
printed-circuits with high population densities. In these  
situations reflow soldering is often used.  
Repairing soldered joints  
Apply a low voltage soldering iron (less than 24 V) to the  
lead(s) of the package, below the seating plane or not  
more than 2 mm above it. If the temperature of the  
soldering iron bit is less than 300 °C it may remain in  
contact for up to 10 seconds. If the bit temperature is  
between 300 and 400 °C, contact may be up to 5 seconds.  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “IC Package Databook” (order code 9398 652 90011).  
Soldering by dipping or by wave  
The maximum permissible temperature of the solder is  
260 °C; solder at this temperature must not be in contact  
with the joint for more than 5 seconds. The total contact  
time of successive solder waves must not exceed  
5 seconds.  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
July 1994  
12  
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