INTEGRATED CIRCUITS
DATA SHEET
TDA2614
6 W hi-fi audio power amplifier
July 1994
Product specification
File under Integrated Circuits, IC01
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Philips Semiconductors
Product specification
6 W hi-fi audio power amplifier
TDA2614
+ V
P
7
4 kΩ
2
MUTE
5 kΩ
+ V
P
TDA2614
V
ref3
10 kΩ
+ V
+ V
P
V
ref2
V
3
ref1
THERMAL
PROTECTION
1/2 V / GND
P
voltage
comparator
V
10 kΩ
A
B
– V
ref2
– V
– V
P
P
20 kΩ
6
OUT
9
8
CM
INV
INV
680 Ω
V
B
20 kΩ
V
1
4
ref1
n.c.
n.c.
substrate
5
V
A
MCD371 - 1
GND /
V
P
Fig.1 Block diagram.
July 1994
3
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Philips Semiconductors
Product specification
6 W hi-fi audio power amplifier
TDA2614
PINNING
FUNCTIONAL DESCRIPTION
The TDA2614 is a hi-fi power amplifier designed for mains
fed applications, such as radio and TV. The circuit is
optimally designed for asymmetrical power supplies, but is
also well-suited to symmetrical power supply systems.
SYMBOL
n.c.
PIN
DESCRIPTION
not connected
1
2
3
MUTE
mute input
1/2VP/GND
1/2 supply (or ground at
symmetrical power supplies)
An output power of 6 W (THD = 0.5%) can be delivered
into an 8 Ω load with a supply of 24 V. The gain is internally
fixed at 30 dB, thus offering a low gain spread.
n.c.
4
5
not connected
GND/−VP
ground (or negative supply rail at
symmetrical power supplies)
A special feature is the input mute circuit. This circuit
disconnects the non-inverting input when the supply
voltage drops below 10 V, while the amplifier still retains its
DC operating adjustment. The circuit features suppression
of unwanted signals at the input, during switch-on and
switch-off.
OUT
VP
6
7
8
9
output
supply voltage
inverting input
non-inverting input
INV
−INV
The mute circuit can also be activated via pin 2. When a
current at 300 µA is present at pin 2, the circuit is in the
mute condition.
The device is provided with two thermal protection circuits.
One circuit measures the average temperature of the
crystal and the other measure the momentary temperature
of the power transistors. These control circuits attack at
temperatures in excess of 150 °C, so a crystal operating
temperature of max. 150 °C can be used without extra
distortion.
handbook, halfpage
n.c.
1
2
3
4
MUTE
1/2 V / GND
P
n.c.
With the derating value of 8 K/W, the heatsink can be
calculated as follows:
GND / – V
P
5
6
7
8
9
TDA2614
at RL = 8 Ω and VS = 24 V, dissipation is 4.1 W.
OUT
V
P
With a maximum ambient temperature of 60 °C, the
thermal resistance of the heatsink is:
INV
150 – 60
Rth
=
– 8 = 14 K/W.
----------------------
– INV
4.1
MCD367 - 1
Fig.2 Pin configuration.
July 1994
4
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Philips Semiconductors
Product specification
6 W hi-fi audio power amplifier
TDA2614
LIMITING VALUES
In accordance with the Absolute maximum System (IEC 134).
SYMBOL
VP
IOSM
Ptot
PARAMETER
positive supply voltage
CONDITIONS
MIN.
MAX.
42
UNIT
−
−
−
−55
−
V
non-repetitive peak output current
total power dissipation
4
A
see Fig.3
15
W
°C
°C
°C
h
Tstg
TXTAL
Tamb
tsc
storage temperature range
crystal temperature
+150
+150
+150
1
ambient operating temperature range
short circuit time
−25
−
short circuit to ground; note 1
Note to the limiting values
1. For asymmetrical power supplies (with the load short-circuited), the maximum unloaded supply voltage is limited to
VP = 28 V, and with an internal supply resistance of RS ≥ 4 Ω, the maximum unloaded supply voltage is limited to
32 V (with the load short-circuited). For symmetrical power supplies, the circuit is short-circuit-proof up to
VP = ±21 V.
THERMAL RESISTANCE
THERMAL
RESISTANCE
SYMBOL
PARAMETER
Rth j-c
from junction to case
8 K/W
MGA091 - 2
16
handbook, halfpage
P
tot
(W)
12
infinite heatsink
8
4
R
= 14 K/W
50
th-hs
0
– 25
0
100
T
150
C)
o
(
amb
Fig.3 Power derating curve.
July 1994
5
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Philips Semiconductors
Product specification
6 W hi-fi audio power amplifier
TDA2614
CHARACTERISTICS
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
supply voltage range
repetitive peak output current
−
−
24
42
V
IORM
2.2
−
A
Operating position; note 1
VP
IP
supply voltage range
total quiescent current
output power
15
10
24
20
42
35
V
mA
PO
THD = 0.5%
5
6.5
8.5
10
−
−
−
−
0.2
−
W
W
W
W
%
THD = 10%
6.5
−
−
−
−
THD = 0.5%; RL = 4 Ω
THD = 10%; RL = 4 Ω
Po = 4 W
14
THD
B
total harmonic distortion
power bandwidth
0.15
30 to
20 000
30
THD = 0.5%; note 2
Hz
Gv
voltage gain
29
−
−
14
35
−
31
200
140
26
−
dB
mV
µV
kΩ
dB
µA
|∆V3-6
Vno
|Zi|
|
DC output offset voltage
noise output voltage
input impedance
30
note 3
note 4
70
20
SVRR
Ibias
supply voltage ripple rejection
input bias current
45
0.3
−
MUTE POSITION (AT IMUTE ≥ 300 µA)
VO
output voltage
VI = 600 mV
−
−
10
−
35
−
0.1
9
1.0
−
mV
kΩ
mA
µV
Z2-7
IP
mute input impedance
total quiescent current
noise output voltage
supply voltage ripple rejection
DC output offset voltage
20
70
44
40
4
35
Vno
SVRR
note 3
note 4
140
−
200
150
dB
|∆V3-6
|∆Voff|
|
mV
mV
offset voltage with respect to
operating position
−
I2
current if pin 2 is connected to pin 5
−
−
6
mA
Mute position; note 5
VP
positive supply voltage range
4
−
10
V
IP
total quiescent current
output voltage
RL = ∞
VI = 600 mV
note 3
5
15
0.1
70
44
40
20
mA
mV
µV
dB
mV
VO
−
−
35
−
1.0
140
−
Vno
SVRR
noise output voltage
supply voltage ripple rejection
DC output offset voltage
note 4
|∆V3-6
|
200
July 1994
6
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Philips Semiconductors
Product specification
6 W hi-fi audio power amplifier
TDA2614
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Operating position; note 6
±VP
IP
supply voltage range
total quiescent current
output power
7.5
12
21
V
10
20
35
mA
PO
THD = 0.5%
5
6.5
8
−
−
0.2
−
W
W
%
THD = 10%
6.5
−
−
THD
B
total harmonic distortion
power bandwidth
Po = 4 W
0.13
40 to
20000
30
THD = 0.5%; note 2
Hz
Gv
voltage gain
29
−
14
40
−
31
140
26
−
−
200
dB
µV
kΩ
dB
µA
mV
Vno
noise output voltage
input impedance
note 3
70
|Zi|
20
SVRR
Ibias
supply voltage ripple rejection
input bias current
55
0.3
30
|VGND
|
DC output offset voltage
−
MUTE POSITION (AT IMUTE ≥ 300 µA)
VO
output voltage
VI = 600 mV
note 7
−
0.1
9
1.0
11.3
35
mV
kΩ
mA
µV
Z2-7
mute input impedance
total quiescent current
noise output voltage
supply voltage ripple rejection
DC output offset voltage
6.7
10
−
40
−
IP
RL = ∞
note 3
20
70
55
40
4
Vno
140
−
200
150
SVRR
|∆VGND
|∆Voff|
note 4
dB
|
mV
mV
offset voltage with respect to
operating position
−
I2
current if pin 2 is connected to pin 5
−
−
6
mA
Notes to the characteristics
1. VP = 24 V; RL = 8 Ω; Tamb = 25 °C; f = 1 kHz; asymmetrical power supply IMUTE < 30 µA. See Fig.5
2. The power bandwidth is measured at an output power of PO max − 3 dB.
3. The noise output voltage (RMS value) is measured at RS = 2 kΩ, unweighted (20 Hz to 20 kHz).
4. The ripple rejection is measured at RS = 0 and f = 100 Hz to 20 kHz, at a ripple voltage of 200 mV. With symmetrical
power supplies, the ripple (200 mV) is applied in phase to the positive and the negative supply rails.
With asymmetrical power supplies, the ripple rejection is measured at f = 1 kHz.
5. VP = 8 V; RL = 8 Ω; Tamb = 25 °C; f = 1 kHz; asymmetrical power supply. See Fig.5
6. ±VP = 12 V; RL = 8 Ω; Tamb = 25 °C; f = 1 kHz; symmetrical power supply IMUTE < 30 µA. See Fig.4
7. The internal network at pin 2 is a resistor devider of typical 4 kΩ and 5 kΩ to the positive supply rail. At the connection
of the 4 kΩ and 5 kΩ resistor a zener diode of typical 6.6 V is also connected to the positive supply rail. The spread
of the zener voltage is 6.1 to 7.1 V.
July 1994
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Philips Semiconductors
Product specification
6 W hi-fi audio power amplifier
TDA2614
mute input
+ V
P
680 µF
2
7
3
TDA2614
20 kΩ
100 nF
220 nF
9
V
I
6
22 nF
680 Ω
20 kΩ
8
8.2 Ω
R
= 8 Ω
L
5
– V
P
MCD370
680 µF
Fig.4 Test and application circuit with symmetrical power supply.
R
V
P
S
V
mute input
S
100 nF
680 µF
2
7
3
internal
1/2
P
100 µF
TDA2614
20 kΩ
220 nF
9
8
V
I
6
22 nF
680 µF
20 kΩ
680 Ω
8.2 Ω
R
= 8 Ω
L
5
MCD369
Fig.5 Test and application circuit with asymmetrical power supply.
8
July 1994
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Philips Semiconductors
Product specification
6 W hi-fi audio power amplifier
TDA2614
PACKAGE OUTLINE
SIL9MPF: plastic single in-line medium power package with fin; 9 leads
SOT110-1
D
D
1
q
A
2
P
P
1
A
3
q
2
q
1
A
A
4
E
pin 1 index
c
L
1
9
b
Q
e
Z
b
w
M
2
b
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
Z
max.
A
max.
2
(1)
(1)
E
UNIT
A
A
b
b
b
c
D
D
e
L
P
P
Q
q
q
q
2
w
A
3
4
1
2
1
1
1
18.5
17.8
8.7 15.8 1.40 0.67 1.40 0.48 21.8 21.4 6.48
8.0 15.4 1.14 0.50 1.14 0.38 21.4 20.7 6.20
3.9 2.75 3.4 1.75 15.1
3.4 2.50 3.2 1.55 14.9
4.4
4.2
5.9
5.7
2.54
mm
3.7
0.25 1.0
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-11-17
95-02-25
SOT110-1
July 1994
9
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Philips Semiconductors
Product specification
6 W hi-fi audio power amplifier
TDA2614
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
July 1994
10
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