Philips Stereo Amplifier TDA2614 User Manual

INTEGRATED CIRCUITS  
DATA SHEET  
TDA2614  
6 W hi-fi audio power amplifier  
July 1994  
Product specification  
File under Integrated Circuits, IC01  
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Philips Semiconductors  
Product specification  
6 W hi-fi audio power amplifier  
TDA2614  
+ V  
P
7
4 k  
2
MUTE  
5 kΩ  
+ V  
P
TDA2614  
V
ref3  
10 kΩ  
+ V  
+ V  
P
V
ref2  
V
3
ref1  
THERMAL  
PROTECTION  
1/2 V / GND  
P
voltage  
comparator  
V
10 kΩ  
A
B
– V  
ref2  
– V  
– V  
P
P
20 kΩ  
6
OUT  
9
8
CM  
INV  
INV  
680 Ω  
V
B
20 kΩ  
V
1
4
ref1  
n.c.  
n.c.  
substrate  
5
V
A
MCD371 - 1  
GND /  
V
P
Fig.1 Block diagram.  
July 1994  
3
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Philips Semiconductors  
Product specification  
6 W hi-fi audio power amplifier  
TDA2614  
PINNING  
FUNCTIONAL DESCRIPTION  
The TDA2614 is a hi-fi power amplifier designed for mains  
fed applications, such as radio and TV. The circuit is  
optimally designed for asymmetrical power supplies, but is  
also well-suited to symmetrical power supply systems.  
SYMBOL  
n.c.  
PIN  
DESCRIPTION  
not connected  
1
2
3
MUTE  
mute input  
1/2VP/GND  
1/2 supply (or ground at  
symmetrical power supplies)  
An output power of 6 W (THD = 0.5%) can be delivered  
into an 8 load with a supply of 24 V. The gain is internally  
fixed at 30 dB, thus offering a low gain spread.  
n.c.  
4
5
not connected  
GND/VP  
ground (or negative supply rail at  
symmetrical power supplies)  
A special feature is the input mute circuit. This circuit  
disconnects the non-inverting input when the supply  
voltage drops below 10 V, while the amplifier still retains its  
DC operating adjustment. The circuit features suppression  
of unwanted signals at the input, during switch-on and  
switch-off.  
OUT  
VP  
6
7
8
9
output  
supply voltage  
inverting input  
non-inverting input  
INV  
INV  
The mute circuit can also be activated via pin 2. When a  
current at 300 µA is present at pin 2, the circuit is in the  
mute condition.  
The device is provided with two thermal protection circuits.  
One circuit measures the average temperature of the  
crystal and the other measure the momentary temperature  
of the power transistors. These control circuits attack at  
temperatures in excess of 150 °C, so a crystal operating  
temperature of max. 150 °C can be used without extra  
distortion.  
handbook, halfpage  
n.c.  
1
2
3
4
MUTE  
1/2 V / GND  
P
n.c.  
With the derating value of 8 K/W, the heatsink can be  
calculated as follows:  
GND / – V  
P
5
6
7
8
9
TDA2614  
at RL = 8 and VS = 24 V, dissipation is 4.1 W.  
OUT  
V
P
With a maximum ambient temperature of 60 °C, the  
thermal resistance of the heatsink is:  
INV  
150 60  
Rth  
=
8 = 14 K/W.  
----------------------  
– INV  
4.1  
MCD367 - 1  
Fig.2 Pin configuration.  
July 1994  
4
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Philips Semiconductors  
Product specification  
6 W hi-fi audio power amplifier  
TDA2614  
LIMITING VALUES  
In accordance with the Absolute maximum System (IEC 134).  
SYMBOL  
VP  
IOSM  
Ptot  
PARAMETER  
positive supply voltage  
CONDITIONS  
MIN.  
MAX.  
42  
UNIT  
55  
V
non-repetitive peak output current  
total power dissipation  
4
A
see Fig.3  
15  
W
°C  
°C  
°C  
h
Tstg  
TXTAL  
Tamb  
tsc  
storage temperature range  
crystal temperature  
+150  
+150  
+150  
1
ambient operating temperature range  
short circuit time  
25  
short circuit to ground; note 1  
Note to the limiting values  
1. For asymmetrical power supplies (with the load short-circuited), the maximum unloaded supply voltage is limited to  
VP = 28 V, and with an internal supply resistance of RS 4 , the maximum unloaded supply voltage is limited to  
32 V (with the load short-circuited). For symmetrical power supplies, the circuit is short-circuit-proof up to  
VP = ±21 V.  
THERMAL RESISTANCE  
THERMAL  
RESISTANCE  
SYMBOL  
PARAMETER  
Rth j-c  
from junction to case  
8 K/W  
MGA091 - 2  
16  
handbook, halfpage  
P
tot  
(W)  
12  
infinite heatsink  
8
4
R
= 14 K/W  
50  
th-hs  
0
– 25  
0
100  
T
150  
C)  
o
(
amb  
Fig.3 Power derating curve.  
July 1994  
5
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Philips Semiconductors  
Product specification  
6 W hi-fi audio power amplifier  
TDA2614  
CHARACTERISTICS  
SYMBOL  
Supply  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
VP  
supply voltage range  
repetitive peak output current  
24  
42  
V
IORM  
2.2  
A
Operating position; note 1  
VP  
IP  
supply voltage range  
total quiescent current  
output power  
15  
10  
24  
20  
42  
35  
V
mA  
PO  
THD = 0.5%  
5
6.5  
8.5  
10  
0.2  
W
W
W
W
%
THD = 10%  
6.5  
THD = 0.5%; RL = 4 Ω  
THD = 10%; RL = 4 Ω  
Po = 4 W  
14  
THD  
B
total harmonic distortion  
power bandwidth  
0.15  
30 to  
20 000  
30  
THD = 0.5%; note 2  
Hz  
Gv  
voltage gain  
29  
14  
35  
31  
200  
140  
26  
dB  
mV  
µV  
kΩ  
dB  
µA  
|V3-6  
Vno  
|Zi|  
|
DC output offset voltage  
noise output voltage  
input impedance  
30  
note 3  
note 4  
70  
20  
SVRR  
Ibias  
supply voltage ripple rejection  
input bias current  
45  
0.3  
MUTE POSITION (AT IMUTE 300 µA)  
VO  
output voltage  
VI = 600 mV  
10  
35  
0.1  
9
1.0  
mV  
kΩ  
mA  
µV  
Z2-7  
IP  
mute input impedance  
total quiescent current  
noise output voltage  
supply voltage ripple rejection  
DC output offset voltage  
20  
70  
44  
40  
4
35  
Vno  
SVRR  
note 3  
note 4  
140  
200  
150  
dB  
|V3-6  
|Voff|  
|
mV  
mV  
offset voltage with respect to  
operating position  
I2  
current if pin 2 is connected to pin 5  
6
mA  
Mute position; note 5  
VP  
positive supply voltage range  
4
10  
V
IP  
total quiescent current  
output voltage  
RL = ∞  
VI = 600 mV  
note 3  
5
15  
0.1  
70  
44  
40  
20  
mA  
mV  
µV  
dB  
mV  
VO  
35  
1.0  
140  
Vno  
SVRR  
noise output voltage  
supply voltage ripple rejection  
DC output offset voltage  
note 4  
|V3-6  
|
200  
July 1994  
6
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Philips Semiconductors  
Product specification  
6 W hi-fi audio power amplifier  
TDA2614  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Operating position; note 6  
±VP  
IP  
supply voltage range  
total quiescent current  
output power  
7.5  
12  
21  
V
10  
20  
35  
mA  
PO  
THD = 0.5%  
5
6.5  
8
0.2  
W
W
%
THD = 10%  
6.5  
THD  
B
total harmonic distortion  
power bandwidth  
Po = 4 W  
0.13  
40 to  
20000  
30  
THD = 0.5%; note 2  
Hz  
Gv  
voltage gain  
29  
14  
40  
31  
140  
26  
200  
dB  
µV  
kΩ  
dB  
µA  
mV  
Vno  
noise output voltage  
input impedance  
note 3  
70  
|Zi|  
20  
SVRR  
Ibias  
supply voltage ripple rejection  
input bias current  
55  
0.3  
30  
|VGND  
|
DC output offset voltage  
MUTE POSITION (AT IMUTE 300 µA)  
VO  
output voltage  
VI = 600 mV  
note 7  
0.1  
9
1.0  
11.3  
35  
mV  
kΩ  
mA  
µV  
Z2-7  
mute input impedance  
total quiescent current  
noise output voltage  
supply voltage ripple rejection  
DC output offset voltage  
6.7  
10  
40  
IP  
RL = ∞  
note 3  
20  
70  
55  
40  
4
Vno  
140  
200  
150  
SVRR  
|VGND  
|Voff|  
note 4  
dB  
|
mV  
mV  
offset voltage with respect to  
operating position  
I2  
current if pin 2 is connected to pin 5  
6
mA  
Notes to the characteristics  
1. VP = 24 V; RL = 8 ; Tamb = 25 °C; f = 1 kHz; asymmetrical power supply IMUTE < 30 µA. See Fig.5  
2. The power bandwidth is measured at an output power of PO max 3 dB.  
3. The noise output voltage (RMS value) is measured at RS = 2 k, unweighted (20 Hz to 20 kHz).  
4. The ripple rejection is measured at RS = 0 and f = 100 Hz to 20 kHz, at a ripple voltage of 200 mV. With symmetrical  
power supplies, the ripple (200 mV) is applied in phase to the positive and the negative supply rails.  
With asymmetrical power supplies, the ripple rejection is measured at f = 1 kHz.  
5. VP = 8 V; RL = 8 ; Tamb = 25 °C; f = 1 kHz; asymmetrical power supply. See Fig.5  
6. ±VP = 12 V; RL = 8 ; Tamb = 25 °C; f = 1 kHz; symmetrical power supply IMUTE < 30 µA. See Fig.4  
7. The internal network at pin 2 is a resistor devider of typical 4 kand 5 kto the positive supply rail. At the connection  
of the 4 kand 5 kresistor a zener diode of typical 6.6 V is also connected to the positive supply rail. The spread  
of the zener voltage is 6.1 to 7.1 V.  
July 1994  
7
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Philips Semiconductors  
Product specification  
6 W hi-fi audio power amplifier  
TDA2614  
mute input  
+ V  
P
680 µF  
2
7
3
TDA2614  
20 kΩ  
100 nF  
220 nF  
9
V
I
6
22 nF  
680 Ω  
20 kΩ  
8
8.2 Ω  
R
= 8 Ω  
L
5
– V  
P
MCD370  
680 µF  
Fig.4 Test and application circuit with symmetrical power supply.  
R
V
P
S
V
mute input  
S
100 nF  
680 µF  
2
7
3
internal  
1/2  
P
100 µF  
TDA2614  
20 kΩ  
220 nF  
9
8
V
I
6
22 nF  
680 µF  
20 kΩ  
680 Ω  
8.2 Ω  
R
= 8 Ω  
L
5
MCD369  
Fig.5 Test and application circuit with asymmetrical power supply.  
8
July 1994  
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Philips Semiconductors  
Product specification  
6 W hi-fi audio power amplifier  
TDA2614  
PACKAGE OUTLINE  
SIL9MPF: plastic single in-line medium power package with fin; 9 leads  
SOT110-1  
D
D
1
q
A
2
P
P
1
A
3
q
2
q
1
A
A
4
E
pin 1 index  
c
L
1
9
b
Q
e
Z
b
w
M
2
b
1
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
Z
max.  
A
max.  
2
(1)  
(1)  
E
UNIT  
A
A
b
b
b
c
D
D
e
L
P
P
Q
q
q
q
2
w
A
3
4
1
2
1
1
1
18.5  
17.8  
8.7 15.8 1.40 0.67 1.40 0.48 21.8 21.4 6.48  
8.0 15.4 1.14 0.50 1.14 0.38 21.4 20.7 6.20  
3.9 2.75 3.4 1.75 15.1  
3.4 2.50 3.2 1.55 14.9  
4.4  
4.2  
5.9  
5.7  
2.54  
mm  
3.7  
0.25 1.0  
Note  
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
92-11-17  
95-02-25  
SOT110-1  
July 1994  
9
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Philips Semiconductors  
Product specification  
6 W hi-fi audio power amplifier  
TDA2614  
The device may be mounted up to the seating plane, but  
the temperature of the plastic body must not exceed the  
specified maximum storage temperature (Tstg max). If the  
printed-circuit board has been pre-heated, forced cooling  
may be necessary immediately after soldering to keep the  
temperature within the permissible limit.  
SOLDERING  
Introduction  
There is no soldering method that is ideal for all IC  
packages. Wave soldering is often preferred when  
through-hole and surface mounted components are mixed  
on one printed-circuit board. However, wave soldering is  
not always suitable for surface mounted ICs, or for  
printed-circuits with high population densities. In these  
situations reflow soldering is often used.  
Repairing soldered joints  
Apply a low voltage soldering iron (less than 24 V) to the  
lead(s) of the package, below the seating plane or not  
more than 2 mm above it. If the temperature of the  
soldering iron bit is less than 300 °C it may remain in  
contact for up to 10 seconds. If the bit temperature is  
between 300 and 400 °C, contact may be up to 5 seconds.  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “IC Package Databook” (order code 9398 652 90011).  
Soldering by dipping or by wave  
The maximum permissible temperature of the solder is  
260 °C; solder at this temperature must not be in contact  
with the joint for more than 5 seconds. The total contact  
time of successive solder waves must not exceed  
5 seconds.  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
July 1994  
10  
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