Philips Stereo Amplifier BGY280 User Manual

DISCRETE SEMICONDUCTORS  
DATA SHEET  
BGY280  
UHF amplifier module  
Preliminary specification  
2000 Nov 15  
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Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY280  
CHARACTERISTICS  
ZS = ZL = 50 ; PD1,2 = 0 dBm; VS1 = VS2 = 3.6 V; VC1,2 2.2 V; Tmb = 25 °C; tp = 575 µs; δ = 2 : 8;  
f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); unless otherwise specified.  
SYMBOL  
PARAMETER  
leakage current  
CONDITIONS  
VC1,2 = 0.2 V  
MIN.  
TYP. MAX.  
UNIT  
µA  
IL  
10  
2
I
CM1, ICM2 peak control current  
mA  
dBm  
dBm  
dBm  
dBm  
dB  
V
V
V
V
C1 = 2.2 V  
34.5  
35.5  
35  
PL1  
load power GSM 900  
load power GSM 1800  
C1 = 2.2 V; VS1 = 3.2 V; Tmb = 25 °C 34  
C2 = 2.2 V  
32.5  
33.5  
33  
PL2  
C2 = 2.2 V; VS1 = 3.2 V; Tmb = 25 °C 32  
GP1  
GP2  
η1  
power gain GSM900  
power gain GSM1800  
efficiency GSM900  
efficiency GSM1800  
harmonics GSM900  
harmonics GSM1800  
PL1 = 35.5 dBm  
PL2 = 33 dBm  
PL1 = 35 dBm  
PL2 = 32 dBm  
PL1 = 34 dBm  
PL2 = 32 dBm  
35.5  
33.5  
45  
dB  
40  
33  
%
η2  
38  
%
40  
35  
3 : 1  
dBc  
dBc  
H2, H3  
V
P
S1,2 = 3.2 to 5 V; PL1 = 34 dBm;  
L2 = 32 dBm  
input VSWR of active device  
VSWRin  
input VSWR of inactive  
device  
VS1,2 = 3.2 to 5 V; VC1,2 0.5 V  
8 : 1  
isolation GSM900  
isolation GSM1800  
VC1,2 = 0.5 V; PD1,2 = 3 dBm  
54  
42  
21  
37  
37  
20  
dBm  
dBm  
dBm  
V
C1,2 = 0.5 V; PD1,2 = 3 dBm  
second harmonic isolation  
PL1 = 35 dBm  
from GSM900 into GSM1800  
maximum slope  
carrier rise time  
5 dBm < PL1,2 < PL max  
120  
200  
2
dB/V  
tr  
tf  
PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm;  
time to settle within 0.5 dB of final PL  
1.5  
µs  
carrier fall time  
PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm;  
time to fall below 37 dBm  
1.5  
2
µs  
PL1 34 dBm; bandwidth = 100 kHz;  
f = 925 - 935 MHz; fc = 897.5 MHz  
71  
80  
73  
6
dBm  
dBm  
dBm  
deg/dB  
noise power GSM900  
PL1 34 dBm; bandwidth = 100 kHz;  
f = 935 - 960 MHz; fc = 897.5 MHz  
82  
80  
Pn  
noise power GSM1800  
AM/PM conversion  
PL2 32 dBm; bandwidth = 100 kHz;  
f = 1805 - 1880 MHz; fc = 1747.5 MHz  
P
D1,2 = 0.5 to 0.5 dBm;  
PL1,2 = constant during measurement  
for PL1 = 6 to 34 dBm and  
PL2 = 4 to 32 dBm  
PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm;  
f = 100 kHz; PD1,2 = 5.4 %  
25  
%
AM/AM conversion  
2000 Nov 15  
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Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY280  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP. MAX.  
UNIT  
dB  
TX / RX conversion  
PL1 = 34 dBm; f = 915 MHz  
25  
PL1 (925 MHz) / PD (905 MHz)  
PL2 = 32 dBm; f = 1785 MHz  
PL2 (1765 MHz) / PD (1805 MHz)  
control bandwidth  
stability  
PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm;  
VS1,2 = 3.2 to 5 V; VC = 0 to 2.2 V;  
1
1.5  
MHz  
dBc  
60  
P
P
D1,2 = 0 to 3 dBm; PL1 < 34.8 dBm;  
L2 < 32.5 dBm;  
VSWR 6 : 1 through all phases  
ruggedness  
VS1,2 = 5 V; PD1,2 = 0 to 3 dBm;  
no degradation  
no degradation  
PL1 = 34.8 dBm; PL2 = 32.5 dBm;  
VSWR 6 : 1 through all phases  
VS1,2 = 4.2 V; PD1,2 = 0 to 3 dBm;  
PL1 = 34.8 dBm; PL2 = 32.5 dBm;  
VSWR 10 : 1 through all phases  
40  
50  
PL  
(dBm)  
η
(%)  
897.5MHz  
40  
30  
20  
10  
0
35  
30  
25  
20  
1747.5MHz  
1785MHz  
1710MHz  
915MHz  
880MHz  
1
1.5  
2
2.5  
20  
25  
30  
35  
40  
PL (dBm)  
VC (V)  
ZS = ZL = 50 ; VS = 3.6 V; PD = 0 dBm;  
ZS = ZL = 50 ; VS = 3.6 V; PD = 0 dBm;  
Tmb = 25 °C; δ = 2 : 8; tp = 575 µs.  
Tmb = 25 °C; δ = 2 : 8; tp = 575 µs.  
Fig.2 Load power as a function of control voltage;  
typical values.  
Fig.3 Efficiency as a function of load power;  
typical values.  
2000 Nov 15  
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Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY280  
-20  
-20  
H3  
H2  
(dBc)  
(dBc)  
-30  
-40  
-50  
-60  
-30  
1710MHz  
915MHz  
880MHz  
-40  
-50  
-60  
915MHz  
880MHz  
1785MHz  
1710MHz  
1785MHz  
20  
25  
30  
35  
PL (dBm)  
40  
20  
25  
30  
35  
PL (dBm)  
40  
ZS = ZL = 50 ; VS = 3.6 V; PD = 0 dBm;  
ZS = ZL = 50 ; VS = 3.6 V; PD = 0 dBm;  
Tmb = 25 °C; δ = 2 : 8; tp = 575 µs.  
Tmb = 25 °C; δ = 2 : 8; tp = 575 µs.  
Fig.4 Second harmonic as a function of load  
power; typical values.  
Fig.5 Third harmonic as a function of load power;  
typical values.  
40  
40  
gain  
(dB)  
gain  
(dB)  
small signal gain  
(1)  
30  
30  
small signal gain  
(2)  
(1)  
(2)  
(3)  
(3)  
(4)  
20  
20  
(5)  
conversion gain  
(6)  
conversion gain  
(4)  
10  
0
10  
0
(5)  
(6)  
10  
20  
30  
40  
PL (dBm)  
10  
20  
30  
40  
PL (dBm)  
ZS = ZL = 50 ; PD = 0 dBm; VS = 3.6 V;Tmb = 25 °C;  
fc = 1747.5 MHz; δ = 2 : 8; t p = 575 µs.  
ZS = ZL = 50 ; VS = 3.6 V; PD = 0 dBm;  
Tmb = 25 °C; fc = 897.5 MHz; δ = 2 : 8; t p = 575 µs.  
(1) f = 1805 MHz  
(2) f = 1842.5 MHz  
(3) f = 1880 MHz  
(4) f = 1615 MHz  
(5) f = 1625.5 MHz  
(6) f = 1690 MHz  
(1) f = 925 MHz  
(2) f = 942.5 MHz  
(3) f = 960 MHz  
(4) f = 835 MHz  
(5) f = 852.5 MHz  
(6) f = 870 MHz  
Fig.6 Gain as a function of load power; typical  
values.  
Fig.7 Gain as a function of load power; typical  
values.  
2000 Nov 15  
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Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY280  
40  
8
output  
AM  
(%)  
AM-PM  
(deg/dB)  
6
4
2
0
30  
1800MHz  
20  
900MHz  
10  
1800MHz  
900MHz  
0
0
10  
20  
30  
40  
PL (dBm)  
-10  
0
10  
20  
30  
PL (dBm)  
40  
ZS = ZL = 50 ; VS = 3.6 V; PD = 0 dBm; Tmb = 25 °C;  
ZS = ZL = 50 ; VS = 3.6 V; PD = 0 dBm; Tmb = 25 °C;  
f = 100 kHz; input amplitude modulation = 5.4%; δ = 2 : 8; tp = 575 µs.  
δ = 2 : 8; tp = 575 µs.  
Fig.8 Output amplitude modulation as a function  
of load power; typical values.  
Fig.9 Output phase at PD = +0.5 dBm, relatively  
to output phase at PD = 0.5 dBm;  
typical values.  
-60  
noise  
(dBm)  
-70  
RX=1845MHz  
-80  
RX=942.5MHz  
-90  
-100  
0
10  
20  
30  
PL (dBm)  
40  
ZS = ZL = 50 ; VS = 3.6 V; PD = 0 dBm;  
Tmb = 25 °C; δ = 2 : 8; tp = 575 µs.  
Fig.10 Noise as a function of load power;  
typical values.  
2000 Nov 15  
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Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY280  
VS  
RF input  
RF output  
Z2  
Z3  
BGY280  
GSM900  
8
7
12  
VC  
VC  
13  
15  
5
4
16  
GSM1800  
Z1  
Z4  
RF input  
RF output  
VS  
Fig.11 Test circuit  
List of components (See Fig 10 and 11)  
COMPONENT  
DESCRIPTION  
VALUE  
DIMENSIONS  
CATALOGUE NO.  
C1, C4  
multilayer ceramic chip capacitor  
electrolytic capacitor  
stripline; note 1  
100 µF; 40 V  
100 nF  
C2, C3  
Z1, Z2, Z3, Z4  
R1, R2  
50 Ω  
width 2.33 mm  
metal film resistor  
100 ; 0.6 W  
2322 156 11001  
Note  
1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.2);  
thickness 132 inch.  
2000 Nov 15  
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Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY280  
Fig.12 PCB testcircuit  
8
2000 Nov 15  
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Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY280  
PACKAGE OUTLINE SOT559A  
Leadless surface mounted package; plastic cap; 16 terminations  
SOT559A  
e
e
1
L
(4×)  
1
Z
(12×)  
1
Z
(12×)  
4
6
L
(4×)  
L (12×)  
b (12×)  
Z (2×)  
3
1
2
3
Z
5
4
5
(4×)  
16  
L
2
b
4
(4×)  
(4×)  
15  
e
2
2
e
e
Z
1
(2×)  
Z
b
2
6
3
14  
13  
(2×)  
(2×)  
Z
(6×)  
7
b
(4×)  
7
e
7
8
Z
8
(6×)  
b
(4×)  
8
12  
11  
10  
9
b
(4×)  
(4×)  
Z
(2×)  
6
2
b
(4×)  
b
(2×)  
b
5
3
1
D
Dimensions solderresist  
D
1
A
c
E
E
1
pin 1 index  
Z
Z
Z
Z
Z
Z
Z
Z
8
1
2
3
4
5
6
7
0
5
10 mm  
2.5  
2.3  
3.5 2.9 1.1 1.5 1.1 3.8 1.5  
3.3 2.7 0.9 1.3 0.9 3.6 1.3  
scale  
DIMENSIONS (mm are the original dimensions)  
A
b
b
b
b
b
b
b
6
b
b
c
D
D
E
E
e
e
e
L
L
L
L
3
Z
UNIT  
1
2
3
4
5
7
8
1
1
1
2
1
2
1.9 1.1 3.5 2.9 5.275 4.2 1.2 0.625 0.8 0.9 0.55 14.05 13.6 11.3 10.85  
1.5 0.9 3.3 2.7 5.075 4.0 1.0 0.425 0.6 0.7 0.45 13.45 13.3 10.7 10.55  
1.1 1.6 0.6 1.6 2.6  
0.9 1.4 0.4 1.4 2.4  
mm  
2.6 3.3 4.4  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
00-01-31  
00-09-28  
SOT559A  
2000 Nov 15  
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Philips Semiconductors  
Preliminary specification  
UHF amplifier module  
BGY280  
DATA SHEET STATUS  
PRODUCT  
STATUS  
DATA SHEET STATUS  
DEFINITIONS (1)  
Objective specification  
Development This data sheet contains the design target or goal specifications for  
product development. Specification may change in any manner without  
notice.  
Preliminary specification Qualification  
This data sheet contains preliminary data, and supplementary data will be  
published at a later date. Philips Semiconductors reserves the right to  
make changes at any time without notice in order to improve design and  
supply the best possible product.  
Product specification  
Production  
This data sheet contains final specifications. Philips Semiconductors  
reserves the right to make changes at any time without notice in order to  
improve design and supply the best possible product.  
Note  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification The data in a short-form  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
Life support applications These products are not  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes Philips Semiconductors  
reserves the right to make changes, without notice, in the  
products, including circuits, standard cells, and/or  
software, described or contained herein in order to  
improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for  
the use of any of these products, conveys no licence or title  
under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that  
these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified.  
Application information Applications that are  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2000 Nov 15  
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For all other countries apply to: Philips Semiconductors,  
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70  
SCA  
© Philips Electronics N.V.  
2000  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
budgetnum/printrun/ed/pp11  
Date of release: 2000 Nov 15  
Document order number: 9397 750 07748  
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