Philips Stereo Amplifier BGM1012 User Manual

DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BGM1012  
MMIC wideband amplifier  
Product specification  
2002 Sep 06  
Supersedes data of 2002 May 16  
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Philips Semiconductors  
Product specification  
MMIC wideband amplifier  
BGM1012  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
VS  
PARAMETER  
DC supply voltage  
CONDITIONS  
MIN.  
MAX.  
UNIT  
RF input AC coupled  
4
V
IS  
supply current  
50  
mA  
mW  
°C  
°C  
dBm  
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
operating junction temperature  
maximum drive power  
Ts 90 °C  
200  
+150  
150  
10  
65  
PD  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
K/W  
Rth j-s  
thermal resistance from junction to  
solder point  
Ptot = 200 mW; Ts 90 °C  
300  
2002 Sep 06  
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Philips Semiconductors  
Product specification  
MMIC wideband amplifier  
BGM1012  
CHARACTERISTICS  
VS = 3 V; IS = 14.6 mA; Tj = 25 °C; unless otherwise specified.  
SYMBOL  
IS  
PARAMETER  
supply current  
CONDITIONS  
MIN.  
11  
TYP.  
14.6  
MAX.  
19  
UNIT  
mA  
2
s21  
insertion power gain  
f = 100 MHz  
f = 1 GHz  
19  
19  
19  
19  
18  
16  
9
19.5  
20.1  
20.4  
20.4  
19.9  
18.7  
11  
20  
21  
21  
22  
21  
20  
dB  
dB  
f = 1.8 GHz  
f = 2.2 GHz  
f = 2.6 GHz  
f = 3 GHz  
dB  
dB  
dB  
dB  
RL IN  
return losses input  
return losses output  
isolation  
f = 1 GHz  
dB  
f = 2.2 GHz  
f = 1 GHz  
13  
11  
10  
30  
35  
15  
dB  
RL OUT  
14  
dB  
f = 2.2 GHz  
f = 1 GHz  
13  
dB  
2
s12  
33  
dB  
f = 2.2 GHz  
f = 1 GHz  
38  
dB  
NF  
noise figure  
4.8  
4.9  
3.6  
2.1  
3.4  
9.7  
5.6  
6.0  
3.4  
2  
5.1  
5.3  
dB  
f = 2.2 GHz  
at s21 2 3 dB below flat gain at 1 GHz 3.1  
dB  
BW  
K
bandwidth  
GHz  
stability factor  
f = 1 GHz  
1.5  
3
f = 2.2 GHz  
PL(sat)  
PL 1 dB  
IP3(in)  
IP3(out)  
saturated load power f = 1 GHz  
f = 2.2 GHz  
8
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
3.5  
4
load power  
at 1 dB gain compression; f = 1 GHz  
at 1 dB gain compression; f = 2.2 GHz  
1.5  
4  
9  
16  
11  
input intercept point  
f = 1 GHz  
f = 2.2 GHz  
7  
18  
output intercept point f = 1 GHz  
f = 2.2 GHz  
13  
2002 Sep 06  
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Philips Semiconductors  
Product specification  
MMIC wideband amplifier  
BGM1012  
APPLICATION INFORMATION  
In Fig.6 the MMIC is used as a driver to the power amplifier  
as part of a transmitter circuit. Good linear performance  
and matched input and output offer quick design solutions  
in such applications.  
Figure 2 shows a typical application circuit for the  
BGM1012 MMIC. The device is internally matched to  
50 , and therefore does not need any external matching.  
The value of the input and output DC blocking capacitors  
C2 and C3 should not be more than 100 pF for  
applications above 100 MHz. However, when the device is  
operated below 100 MHz, the capacitor value should be  
increased.  
DC-block  
DC-block  
100 pF  
DC-block  
100 pF  
handbook, halfpage  
100 pF  
input  
output  
The nominal value of the RF choke L1 is 100 nH. At  
frequencies below 100 MHz this value should be  
increased to 220 nH. At frequencies above 1 GHz a much  
lower value (e.g. 10 nH) can be used to improve return  
losses. For optimal results, a good quality chip inductor  
such as the TDK MLG 1608 (0603), or a wire-wound SMD  
type should be chosen.  
MGU437  
Fig.3 Easy cascading application circuit.  
Both the RF choke L1 and the 22 nF supply decoupling  
capacitor C1 should be located as closely as possible to  
the MMIC.  
mixer  
handbook, halfpage  
from RF  
circuit  
to IF circuit  
or demodulator  
Separate paths must be used for the ground planes of the  
ground pins GND1 and GND2, and these paths must be as  
short as possible. When using vias, use multiple vias per  
pin in order to limit ground path inductance.  
wideband  
amplifier  
MGU438  
oscillator  
Fig.4 Application as IF amplifier.  
V
handbook, halfpage  
s
C1  
L1  
V
s
RF in  
RF out  
RF input  
RF output  
mixer  
handbook, halfpage  
antenna  
C2  
C3  
to IF circuit  
or demodulator  
MGU436  
GND1  
GND2  
LNA  
wideband  
amplifier  
MGU439  
oscillator  
Fig.2 Typical application circuit.  
Fig.5 Application as RF amplifier.  
Figure 3 shows two cascaded MMICs. This configuration  
doubles overall gain while preserving broadband  
characteristics. Supply decoupling and grounding  
conditions for each MMIC are the same as those for the  
circuit of Fig.2.  
mixer  
handbook, halfpage  
from modulation  
or IF circuit  
to power  
amplifier  
The excellent wideband characteristics of the MMIC make  
it an ideal building block in IF amplifier applications such  
as LBNs (see Fig.4).  
wideband  
amplifier  
MGU440  
oscillator  
As a buffer amplifier between an LNA and a mixer in a  
receiver circuit, the MMIC offers an easy matching, low  
noise solution (see Fig.5).  
Fig.6 Application as driver amplifier.  
2002 Sep 06  
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Philips Semiconductors  
Product specification  
MMIC wideband amplifier  
BGM1012  
90°  
1.0  
0.8  
0.6  
0.4  
0.2  
0
+1  
135°  
45°  
+2  
+0.5  
+0.2  
+5  
100 MHz  
4 GHz  
0.2  
0.5  
2
5
180°  
0
0°  
5  
0.2  
0.5  
2  
45°  
135°  
1  
MLD910  
1.0  
90°  
IS = 14.6 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Ω.  
Fig.7 Input reflection coefficient (s11); typical values.  
90°  
1.0  
0.8  
0.6  
0.4  
0.2  
0
+1  
135°  
45°  
+2  
+0.5  
+0.2  
+5  
100 MHz  
2
0.2  
0.5  
1
5
180°  
0
0°  
4 GHz  
5  
0.2  
0.5  
2  
45°  
135°  
1  
MLD911  
1.0  
90°  
IS = 14.6 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Ω.  
Fig.8 Output reflection coefficient (s22); typical values.  
6
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Philips Semiconductors  
Product specification  
MMIC wideband amplifier  
BGM1012  
MLD912  
MLD913  
0
25  
handbook, halfpage  
handbook, halfpage  
2
s
12  
(dB)  
2
s
21  
10  
(dB)  
20  
(1)  
20  
(2)  
(3)  
30  
15  
40  
10  
0
50  
0
1000  
2000  
3000  
4000  
1000  
2000  
3000  
4000  
f (MHz)  
f (MHz)  
PD = 30 dBm; ZO = 50 Ω.  
(1) IS = 18.7 mA; VS = 3.3 V.  
(2) IS = 14.6 mA; VS = 3 V.  
(3) IS = 10.6 mA; VS = 2.7 V.  
IS = 14.6 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Ω.  
Fig.9 Isolation ( s12 2) as a function of frequency;  
typical values.  
Fig.10 Insertion gain ( s21 2) as a function of  
frequency; typical values.  
MLD914  
MLD915  
20  
20  
handbook, halfpage  
handbook, halfpage  
P
L
P
L
(dBm)  
(dBm)  
10  
10  
(1)  
(1)  
(2)  
(3)  
(3)  
(2)  
0
10  
20  
0
10  
20  
40  
30  
20  
10  
0
40  
30  
20  
10  
0
P
(dBm)  
P
(dBm)  
D
D
f = 1 GHz; ZO = 50 Ω.  
(1) VS = 3.3 V.  
(2) VS = 3 V.  
f = 2.2 GHz; ZO = 50 Ω.  
(1) VS = 3.3 V.  
(2) VS = 3 V.  
(3) VS = 2.7 V.  
(3) VS = 2.7 V.  
Fig.11 Load power as a function of drive power at  
1 GHz; typical values.  
Fig.12 Load power as a function of drive power at  
2.2 GHz; typical values.  
2002 Sep 06  
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Philips Semiconductors  
Product specification  
MMIC wideband amplifier  
BGM1012  
MLD916  
MLD917  
5.5  
12  
handbook, halfpage  
handbook, halfpage  
NF  
(dB)  
K
8
5.3  
5.1  
4.9  
(1)  
(2)  
(3)  
4
4.7  
4.5  
0
0
0
1000  
2000  
3000  
1000  
2000  
3000  
4000  
f (MHz)  
f (MHz)  
ZO = 50 Ω.  
(1) IS = 10.6 mA; VS = 2.7 V.  
(2) S = 14.6 mA; VS = 3 V.  
(3) IS = 18.7 mA; VS = 3.3 V.  
I
IS = 14.6 mA; VS = 3 V; PD = 30 dBm; ZO = 50 Ω.  
Fig.13 Noise figure as a function of frequency;  
typical values.  
Fig.14 Stability factor as a function of frequency;  
typical values.  
2002 Sep 06  
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Scattering parameters  
VS = 3 V; IS = 14.6 mA; PD = 30 dBm; ZO = 50 ; Tamb = 25 °C.  
s11  
s21  
s12  
MAGNITUDE  
s22  
MAGNITUDE  
K-  
FACTOR  
f (MHz)  
MAGNITUDE  
ANGLE  
(deg)  
MAGNITUDE  
ANGLE  
(deg)  
ANGLE  
(deg)  
ANGLE  
(deg)  
(ratio)  
(ratio)  
(ratio)  
(ratio)  
100  
200  
0.25122  
0.27070  
0.27979  
0.28323  
0.28557  
0.28673  
0.28517  
0.27902  
0.26682  
0.24746  
0.21894  
0.18164  
0.14000  
0.10418  
0.09469  
0.10595  
0.11609  
0.10827  
0.09866  
0.08693  
0.10090  
14.607  
2.759  
9.33681  
9.42458  
9.63627  
9.76543  
9.93782  
10.03633  
10.11638  
10.26450  
10.40572  
10.44088  
10.46224  
10.45202  
10.34342  
9.87989  
9.20393  
8.68177  
8.18809  
7.93039  
7.77538  
7.33775  
6.90878  
12.018  
5.676  
0.032124  
0.028303  
0.026297  
0.024833  
0.023234  
0.021523  
0.019830  
0.018230  
0.016902  
0.015759  
0.014310  
0.013012  
0.011826  
0.010171  
0.008664  
0.007541  
0.006655  
0.006042  
0.006205  
0.007039  
0.008241  
16.445  
6.37  
0.26458  
0.20645  
0.1543  
64.156  
64.153  
52.558  
39.347  
27.926  
19.293  
12.703  
7.154  
1.6  
1.8  
1.9  
1.9  
2.0  
2.1  
2.2  
2.4  
2.5  
2.7  
3.0  
3.4  
3.9  
4.9  
6.2  
7.5  
9.0  
10.3  
10.3  
9.6  
8.7  
400  
7.969  
14.78  
20.13  
24.14  
27.57  
29.93  
31.81  
33.12  
33.8  
32.67  
26.75  
10.16  
15.051  
33.415  
42.888  
50.017  
60.967  
80.355  
102.07  
8.447  
19.02  
27.93  
36.88  
46.47  
56.05  
65.76  
76.97  
88.33  
100.3  
112.6  
122.9  
129.5  
135.4  
142.2  
151.5  
162.2  
172.6  
177.1  
4.545  
10.24  
14.62  
17.42  
19.83  
21.14  
21.62  
22.32  
22.64  
23.13  
23.27  
23.23  
16.9  
9.957  
0.835  
12.444  
29.297  
40.351  
46.053  
600  
0.15203  
0.16867  
0.19196  
0.21421  
0.23292  
0.24605  
0.25113  
0.24367  
0.22184  
0.18787  
0.13049  
0.1294  
800  
1000  
1200  
1400  
1600  
1800  
2000  
2200  
2400  
2600  
2800  
3000  
3200  
3400  
3600  
3800  
4000  
2.582  
1.26  
4.817  
7.573  
8.489  
4.601  
9.578  
0.1127  
18.402  
23.406  
26.453  
38.211  
152.8  
133.1  
0.092234  
0.059268  
0.015829  
0.028159  
0.075298  
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Philips Semiconductors  
Product specification  
MMIC wideband amplifier  
BGM1012  
PACKAGE OUTLINE  
Plastic surface mounted package; 6 leads  
SOT363  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M
B
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
SOT363  
SC-88  
2002 Sep 06  
10  
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Philips Semiconductors  
Product specification  
MMIC wideband amplifier  
BGM1012  
DATA SHEET STATUS  
PRODUCT  
DATA SHEET STATUS(1)  
STATUS(2)  
DEFINITIONS  
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Changes will be  
communicated according to the Customer Product/Process Change  
Notification (CPCN) procedure SNW-SQ-650A.  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes, without notice, in the  
products, including circuits, standard cells, and/or  
software, described or contained herein in order to  
improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for  
the use of any of these products, conveys no licence or title  
under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that  
these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified.  
Application information  
Applications that are  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2002 Sep 06  
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Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: [email protected].  
© Koninklijke Philips Electronics N.V. 2002  
SCA74  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613516/03/pp12  
Date of release: 2002 Sep 06  
Document order number: 9397 750 10021  
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