This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC5609G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2021G
Package
Code
Features
High forward current transfer ratio hFE
SSSMini3-F2
Absolute Maximum Ratings Ta = 25°C
Pin Name
1. Base
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
2. Emitter
3. Collector
60
50
7
V
V
Marking Symbol: 3F
100
mA
mA
mW
°C
Peak collector current
ICP
200
Collector power dissipation
Junction temperature
PC
100
Tj
125
Storage temperature
T
stg
–55 to +125
°C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
60
50
7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
VCBO IC = 10 mA, IE = 0
VCEO IC = 2 mA, IB = 0
VEBO IE = 10 mA, IC = 0
V
V
ICBO
ICEO
hFE1
VCB = 20 V, IE = 0
0.1
100
390
mA
mA
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
VCE = 2 V, IC = 100 mA
180
90
Forward current transfer ratio
*
hFE2
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 100 mA, IB = 10 mA
0.1
80
0.3
V
fT
VCB = 10 V, IE = –2 mA, f = 200 MHz
MHz
Collector output capacitance
Cre
VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Pulse measurement
*
Publication date : November 2008
SJC00427BED
1
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5609G
SSSMini3-F2
Unit: mm
1.20 ±0.05
0.30 +−00..0025
3
2
1
0.13 +−00..0025
0.20 +−00..0025
(0.4)
(0.4)
0.80 ±0.05
SJC00427BED
3
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Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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– Any applications other than the standard applications intended.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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