This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3931G
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Package
• Code
SMini3-F2
• Marking Symbol: U
• Pin Name
1. Base
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
30
20
V
3
15
V
Collector current
IC
PC
Tj
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
150
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VEBO
VBE
Conditions
Min
30
3
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
V
VCB = 6 V, IE = −1 mA
720
mV
Forward current transfer ratio *
Transition frequency
hFE
VCB = 6 V, IE = −1 mA
65
260
1.0
fT
VCB = 6 V, IE = −1 mA, f = 200 MHz
VCB = 6 V, IE = −1 mA, f = 10.7 MHz
450
650
0.8
MHz
pF
Common-emitter reverse transfer
capacitance
Cre
Power gain
GP
VCB = 6 V, IE = −1 mA, f = 100 MHz
24
dB
dB
Noise figure
NF
VCB = 6 V, IE = −1 mA, f = 100 MHz
3.3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
C
D
hFE
65 to 160
100 to 260
Publication date: April 2007
SJC00358AED
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3931G
Cob VCB
GP IE
NF IE
40
30
20
10
0
12
10
8
1.2
1.0
0.8
0.6
0.4
0.2
0
f = 100 MHz
Rg = 50 kΩ
Ta = 25°C
IE = 0
f = 100 MHz
Rg = 50 Ω
Ta = 25°C
f = 1 MHz
Ta = 25°C
VCE = 10 V
6 V
6
VCE = 6 V, 10 V
4
2
0
− 0.1
−1
−10
−100
− 0.1
−1
−10
−100
0
5
10
15
20
25
30
(
)
(
)
(
)
V
Emitter current IE mA
Emitter current IE mA
Collector-base voltage VCB
bie gie
bre gre
bfe gfe
0
−1
−2
−3
−4
−5
−6
0
−20
20
16
12
8
yie = gie + jbie
10.7
25
150
yre = gre + jbre
10.7
VCE = 10 V
−4 mA
VCE = 10 V
58
−1 mA
100
100
150
−2 mA
−7 mA
−4 mA
−1 mA
−2 mA
100
58
−40
−4 mA
150
58
100
58
IE = −7 mA
−60
f = 150 MHz
IE = −7 mA
100
58
−80
100
25
4
25
−100
−120
yfe = gfe + jbfe
VCE = 10 V
f = 150 MHz
f = 10.7 MHz
0
− 0.5 − 0.4 − 0.3 − 0.2 − 0.1
0
0
20
40
60
80
100
0
3
6
9
12
15
(
)
(
)
(
)
Reverse transfer conductance gre mS
Forward transfer conductance gfe mS
Input conductance gie mS
boe goe
1.2
1.0
0.8
0.6
0.4
0.2
0
150
−2 mA
−4 mA
100
−7 mA
58
25
yoe = goe + jboe
VCE = 10 V
f = 10.7 MHz
0
0.1
0.2
0.3
0.4
0.5
(
)
Output conductance goe mS
SJC00358AED
3
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This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.65)
1.30 0.10
(5°)
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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