This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC2631
Silicon NPN epitaxial planar type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1123
Unit: mm
5.0 0.2
4.0 0.2
■ Features
• Satisfactory linearity of forward current transfer ratio hFE
• High collector-emitter voltage (Base open) VCEO
• Small collector output capacitance (Common base, input open cir-
cuited) Cob
0.7 0.1
■ Absolute Maximum Ratings Ta = 25°C
+0.15
+0.15
0.45
0.45
–0.1
–0.1
Parameter
Symbol
Rating
Unit
V
+0.6
+0.6
2.5
–0.2
2.5
–0.2
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
150
1: Emitter
2: Collector
3: Base
1
2
3
150
V
5
50
V
EIAJ: SC-43A
TO-92-B1 Package
Collector current
IC
ICP
PC
Tj
mA
mA
mW
°C
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
100
750
150
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCEO
VEBO
ICBO
Conditions
Min
150
5
Typ
Max
Unit
V
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = 100 µA, IB = 0
IE = 10 µA, IC = 0
V
VCB = 100 V, IE = 0
VCE = 5 V, IC = 10 mA
1
330
1
µA
hFE
130
VCE(sat) IC = 30 mA, IB = 3 mA
V
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz
160
150
MHz
pF
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
3
(Common base, input open circuited)
Noise voltage
NV
VCE = 10 V, IC = 1 mA, GV = 80 dB
300
mV
Rg = 100 kΩ, Function = FLAT
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
R
S
hFE
130 to 220
185 to 330
Publication date: March 2003
SJC00117BED
1
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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– Any applications other than the standard applications intended.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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