This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1320A
Silicon PNP epitaxial planar type
For general amplification
Unit: mm
6.9 0.1
(4.0)
2.5 0.1
(0.8)
Complementary to 2SD1991A
(0.7)
■ Features
• High forward current transfer ratio hFE
• Allowing supply with the radial taping
0.65 max.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
−60
Unit
V
+0.10
+0.10
0.45
0.45
–0.05
–0.05
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
1.05 0.05
2.5 0.5
−50
V
2.5 0.5
−7
V
1: Emitter
2: Collector
3: Base
Collector current
IC
ICP
PC
Tj
−100
−200
400
mA
mA
mW
°C
1
2
3
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
MT-1-A1 Package
150
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−60
−50
−7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
V
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −20 V, IB = 0
VCE = −10 V, IC = −2 mA
V
−1
−1
µA
µA
ICEO
hFE
160
460
−1
VCE(sat) IC = −100 mA, IB = −10 mA
V
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
80
MHz
pF
Collector output capacitance
Cob
3.5
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
S
No-rank
hFE
160 to 260
210 to 340
290 to 460
160 to 460
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1320A
Cre VCE
NF IE
NF IE
6
5
4
3
2
1
0
20
18
16
14
12
10
8
6
5
4
3
2
1
IE = 1 mA
VCB = −5 V
Rg = 50 kΩ
Ta = 25°C
VCB = −5 V
f = 1 kHz
Rg = 2 kΩ
Ta = 25°C
f = 10.7 MHz
Ta = 25°C
f = 100 Hz
1 kHz
10 kHz
6
4
2
0
0.1
0
0.01
0
−5
−10 −15 −20 −25 −30
1
10
0.1
1
10
(
)
Collector-emitter voltage VCE
V
(
)
(
)
Emitter current IE mA
Emitter current IE mA
h Parameter IE
h Parameter VCB
ICBO Ta
100
VCB = −5 V
f = 270 Hz
Ta = 25°C
IE = −2 mA
VCB = −10 V
f = 270 Hz
Ta = 25°C
hfe
hfe
100
100
hoe (µS)
10
hoe (µS)
10
10
hie (kΩ)
hre (×10−4
)
hie (kΩ)
hre (×10−4
)
1
0.1
1
−1
1
1
10
−10
−100
0
25
)
Ambient temperature Ta °C
50
75
100 125 150
(
)
( )
V
(
Emitter current IE mA
Collector-base voltage VCB
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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