This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA2162G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6036G
Package
Features
Code
Low collector-emitter saturation voltage VCE(sat)
SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
SSSMini3-F2
Marking Symbol: 2U
Pin Name
1. Base
Absolute Maximum Ratings Ta = 25°C
2. Emitter
3. Collector
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
–15
Unit
V
–12
V
–5
V
–500
–1
mA
A
Peak collector current
ICP
Collector power dissipation
Junction temperature
PC
100
mW
°C
°C
Tj
125
Storage temperature
T
stg
–55 to +125
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
–15
–12
–5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
VCBO IC = –10 mA, IE = 0
VCEO IC = –1 mA, IB = 0
VEBO IE = –10 mA, IC = 0
V
V
ICBO
hFE
VCB = –10 V, IE = 0
– 0.1
680
mA
VCE = –2 V, IC = –10 mA
270
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = –200 mA, IB = –10 mA
–250
mV
MHz
fT
VCB = –2 V, IE = 10 mA, f = 200 MHz
200
4.5
Collector output capacitance
Cob
VCB = –10 V, f = 1 MHz
pF
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date : May 2007
SJC00384AED
1
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This product complies with the RoHS Directive (EU 2002/95/EC).
SSSMini3-F2
Unit: mm
1.20 0.05
0.30 +−00..0025
3
2
1
0.13 +−00..0025
0.20 +−00..0025
(0.4)
(0.4)
0.80 0.05
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Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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