Cypress Computer Hardware CY62148ESL User Manual

CY62148ESL MoBL®  
4-Mbit (512K x 8) Static RAM  
Features  
Functional Description  
Very high speed: 55 ns  
The CY62148ESL is a high performance CMOS static RAM  
organized as 512K words by 8 bits. This device features  
advanced circuit design to provide ultra low active current. This  
is ideal for providing More Battery Life™ (MoBL®) in portable  
applications such as cellular telephones. The device also has an  
automatic power down feature that significantly reduces power  
consumption. Placing the device into standby mode reduces  
power consumption by more than 99 percent when deselected  
(CE HIGH). The eight input and output pins (IO0 through IO7) are  
placed in a high impedance state when the device is deselected  
(CE HIGH), the outputs are disabled (OE HIGH), or during a write  
operation (CE LOW and WE LOW).  
Wide voltage range: 2.2V to 3.6V and 4.5V to 5.5V  
Ultra low standby power  
Typical standby current: 1 μA  
Maximum standby current: 7 μA  
Ultra low active power  
Typical active current: 2 mA at f = 1 MHz  
Easy memory expansion with CE and OE features  
Automatic power down when deselected  
CMOS for optimum speed and power  
To write to the device, take Chip Enable (CE) and Write Enable  
(WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is  
then written into the location specified on the address pins (A0  
through A18).  
Available in Pb-free 32-pin STSOP package  
To read from the device, take Chip Enable (CE) and Output  
Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under  
these conditions, the contents of the memory location specified  
by the address pins appear on the IO pins.  
application note AN1064, SRAM System Guidelines.  
Logic Block Diagram  
A
A
A
A
A
A
A
A
A
A
A
A
A
0
1
2
3
4
5
6
7
8
IO  
0
INPUT BUFFER  
IO  
1
IO  
2
512K x 8  
ARRAY  
IO  
3
IO  
4
9
10  
11  
12  
IO  
5
IO  
6
CE  
IO  
POWER  
DOWN  
7
COLUMN DECODER  
WE  
OE  
Cypress Semiconductor Corporation  
Document #: 001-50045 Rev. **  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised January 21, 2009  
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CY62148ESL MoBL®  
Output Current into Outputs (LOW)............................. 20 mA  
Maximum Ratings  
Static Discharge Voltage.......................................... > 2001V  
(MIL-STD-883, Method 3015)  
Exceeding maximum ratings may impair the useful life of the  
device. These user guidelines are not tested.  
Latch Up Current.................................................... > 200 mA  
Storage Temperature.................................. –65°C to +150°C  
Operating Range  
Ambient Temperature with  
Power Applied .............................................. 55°C to +125°C  
Ambient  
Temperature  
[5]  
Device  
Range  
VCC  
Supply Voltage to Ground  
Potential ...........................................................–0.5V to 6.0V  
CY62148ESL  
Industrial –40°C to +85°C 2.2V to 3.6V,  
DC Voltage Applied to Outputs  
and  
4.5V to 5.5V  
in High-Z State [3, 4] ..........................................–0.5V to 6.0V  
DC Input Voltage [3, 4].......................................–0.5V to 6.0V  
Electrical Characteristics  
Over the Operating Range  
55 ns  
Parameter  
Description  
Test Conditions  
Min  
2.0  
2.4  
2.4  
Typ [2]  
Max  
Unit  
VOH  
Output HIGH Voltage  
2.2 < VCC < 2.7  
2.7 < VCC < 3.6  
4.5 < VCC < 5.5  
2.2 < VCC < 2.7  
2.7 < VCC < 3.6  
4.5 < VCC < 5.5  
2.2 < VCC < 2.7  
2.7 < VCC < 3.6  
4.5 < VCC < 5.5  
2.2 < VCC < 2.7  
2.7 < VCC < 3.6  
4.5 < VCC < 5.5  
IOH = –0.1 mA  
IOH = –1.0 mA  
IOH = –1.0 mA  
IOL = 0.1 mA  
IOL = 2.1 mA  
IOL = 2.1 mA  
V
VOL  
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage  
0.4  
0.4  
V
V
V
0.4  
VIH  
1.8  
2.2  
VCC + 0.3  
VCC + 0.3  
VCC + 0.5  
0.4  
2.2  
[6]  
VIL  
–0.3  
–0.3  
–0.5  
–1  
0.6  
0.6  
IIX  
Input Leakage Current GND < VI < VCC  
Output Leakage Current GND < VO < VCC, Output Disabled  
+1  
μA  
μA  
IOZ  
ICC  
–1  
+1  
VCC Operating Supply f = fmax = 1/tRC  
Current  
VCC = VCCmax  
IOUT = 0 mA, CMOS levels  
15  
2
20  
mA  
f = 1 MHz  
2.5  
ISB1  
Automatic CE Power  
Down Current — CMOS  
Inputs  
1
7
μA  
μA  
CE > VCC 0.2V, VIN > VCC – 0.2V or VIN < 0.2V,  
f = fmax (Address and Data Only), f = 0 (OE and WE),  
VCC = VCC(max)  
ISB2  
Automatic CE Power  
Down Current — CMOS  
Inputs  
1
7
CE > VCC – 0.2V, VIN > VCC – 0.2V or VIN < 0.2V,  
V
f = 0, VCC  
=
CC(max)  
Notes  
3. V (min) = –2.0V for pulse durations less than 20 ns.  
IL  
4.  
V
(max) = V + 0.75V for pulse durations less than 20 ns.  
IH CC  
5. Full device AC operation assumes a minimum of 100 μs ramp time from 0 to V (min) and 200 μs wait time after V stabilization.  
CC  
CC  
6. Under DC conditions the device meets a V of 0.8V (for V range of 2.7V to 3.6V and 4.5V to 5.5V) and 0.6V (for V range of 2.2V to 2.7V). However, in dynamic  
IL  
CC  
CC  
Document #: 001-50045 Rev. **  
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CY62148ESL MoBL®  
Capacitance  
Tested initially and after any design or process changes that may affect these parameters.  
Parameter  
CIN  
Description  
Input Capacitance  
Output Capacitance  
Test Conditions  
TA = 25°C, f = 1 MHz,  
CC = VCC(typ)  
Max  
10  
Unit  
pF  
V
COUT  
10  
pF  
Thermal Resistance  
Tested initially and after any design or process changes that may affect these parameters.  
Parameter  
Description  
Test Conditions  
STSOP  
Unit  
ΘJA  
Thermal Resistance  
(Junction to Ambient)  
Still Air, soldered on a 3 x 4.5 inch, two layer printed  
circuit board  
49.02  
°C/W  
ΘJC  
Thermal Resistance  
(Junction to Case)  
14.07  
°C/W  
Figure 2. AC Test Loads and Waveforms  
R1  
ALL INPUT PULSES  
VCC  
VCC  
90%  
10%  
OUTPUT  
90%  
10%  
R2  
GND  
30 pF  
Rise Time = 1 V/ns  
Fall Time = 1 V/ns  
INCLUDING  
JIG AND  
SCOPE  
Equivalent to:  
THEVENIN EQUIVALENT  
RTH  
OUTPUT  
V
Parameters  
2.50V  
16667  
15385  
8000  
3.0V  
1103  
1554  
645  
5.0V  
1800  
990  
Unit  
Ω
R1  
R2  
Ω
RTH  
VTH  
639  
Ω
1.20  
1.75  
1.77  
V
Document #: 001-50045 Rev. **  
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CY62148ESL MoBL®  
Data Retention Characteristics  
Over the Operating Range  
Parameter  
VDR  
Description  
Conditions  
Min  
Typ [2]  
Max  
Unit  
V
VCC for Data Retention  
Data Retention Current  
1.5  
ICCDR  
CE > VCC – 0.2V,  
VIN > VCC – 0.2V or VIN < 0.2V  
V
CC = 1.5V  
1
7
μA  
tCDR  
Chip Deselect to Data  
Retention Time  
0
ns  
ns  
tR  
Operation Recovery Time  
tRC  
Data Retention Waveform  
DATA RETENTION MODE  
> 1.5V  
VCC(min)  
VCC(min)  
V
VCC  
CE  
DR  
t
t
R
CDR  
Notes  
7. Tested initially and after any design or process changes that may affect these parameters.  
8. Full device operation requires linear V ramp from V to V > 100 μs or stable at V > 100 μs.  
CC(min)  
CC  
DR  
CC(min)  
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CY62148ESL MoBL®  
Switching Characteristics  
Over the Operating Range [9]  
55 ns  
Parameter  
Description  
Unit  
Min  
55  
Max  
Read Cycle  
tRC  
Read Cycle Time  
ns  
tAA  
Address to Data Valid  
55  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tOHA  
tACE  
tDOE  
tLZOE  
tHZOE  
tLZCE  
tHZCE  
tPU  
Data Hold from Address Change  
CE LOW to Data Valid  
OE LOW to Data Valid  
OE LOW to Low Z [10]  
OE HIGH to High Z [10, 11]  
CE LOW to Low Z [10]  
10  
55  
25  
5
10  
0
20  
20  
55  
CE HIGH to High Z [10, 11]  
CE LOW to Power Up  
CE HIGH to Power Up  
tPD  
Write Cycle [12]  
tWC  
Write Cycle Time  
55  
40  
40  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tSCE  
tAW  
CE LOW to Write End  
Address Setup to Write End  
Address Hold from Write End  
Address Setup to Write Start  
WE Pulse Width  
tHA  
tSA  
0
tPWE  
tSD  
40  
25  
0
Data Setup to Write End  
Data Hold from Write End  
WE LOW to High Z [10, 11]  
WE HIGH to Low Z [10]  
tHD  
tHZWE  
tLZWE  
20  
10  
Notes  
9. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1 V/ns), timing reference levels of V  
/2, input pulse  
CC(typ)  
levels of 0 to V  
, and output loading of the specified I /I as shown in AC Test Loads and Waveforms on page 4.  
CC(typ)  
OL OH  
10. At any given temperature and voltage condition, t  
is less than t  
, t  
for any given device.  
HZCE  
LZCE HZOE  
LZOE  
HZWE  
LZWE  
11. t  
, t  
, and t  
transitions are measured when the output enter a high impedance state.  
HZOE HZCE  
HZWE  
12. The internal write time of the memory is defined by the overlap of WE, CE = V . All signals must be ACTIVE to initiate a write and any of these signals can terminate  
IL  
a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.  
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CY62148ESL MoBL®  
Switching Waveforms  
Figure 3. Read Cycle No. 1 (Address Transition Controlled) [13, 14]  
tRC  
ADDRESS  
t
AA  
t
OHA  
DATA OUT  
PREVIOUS DATA VALID  
DATA VALID  
Figure 4. Read Cycle No. 2 (OE Controlled) [14, 15]  
ADDRESS  
CE  
t
RC  
t
ACE  
OE  
t
HZOE  
t
DOE  
t
HZCE  
t
LZOE  
HIGH  
IMPEDANCE  
HIGH IMPEDANCE  
DATA VALID  
DATA OUT  
t
LZCE  
t
PD  
ICC  
t
V
CC  
PU  
50%  
SUPPLY  
CURRENT  
50%  
ISB  
Figure 5. Write Cycle No. 1 (WE Controlled, OE HIGH During Write) [16, 17]  
t
WC  
ADDRESS  
CE  
t
SCE  
t
t
HA  
AW  
t
SA  
t
PWE  
WE  
OE  
t
t
SD  
HD  
DATA IO  
NOTE  
DATA VALID  
t
HZOE  
Notes  
13. Device is continuously selected. OE, CE = V .  
IL  
14. WE is HIGH for read cycles.  
15. Address valid before or similar to CE transition LOW.  
16. Data IO is high impedance if OE = V  
.
IH  
17. If CE goes HIGH simultaneously with WE HIGH, the output remains in high impedance state.  
18. During this period, the IOs are in output state. Do not apply input signals.  
Document #: 001-50045 Rev. **  
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CY62148ESL MoBL®  
Switching Waveforms (continued)  
Figure 6. Write Cycle No. 2 (CE Controlled) [16, 17]  
t
WC  
ADDRESS  
CE  
t
SCE  
t
SA  
t
t
AW  
HA  
t
PWE  
WE  
t
t
HD  
SD  
DATA IO  
DATA VALID  
Figure 7. Write Cycle No. 3 (WE Controlled, OE LOW) [17]  
t
WC  
ADDRESS  
CE  
t
SCE  
t
t
HA  
AW  
t
SA  
t
PWE  
WE  
t
t
HD  
SD  
NOTE  
DATA VALID  
DATA IO  
t
t
LZWE  
HZWE  
Truth Table  
CE  
H
L
WE  
OE  
Inputs/Outputs  
Mode  
Power  
Standby (ISB  
Active (ICC  
Active (ICC  
Active (ICC  
X
H
H
L
X
L
High Z  
Deselect/Power Down  
Read  
)
Data Out  
High Z  
)
L
H
X
Output Disabled  
Write  
)
L
Data in  
)
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CY62148ESL MoBL®  
Ordering Information  
Speed  
Package  
Diagram  
Operating  
Range  
Ordering Code  
CY62148ESL-55ZAXI  
Package Type  
(ns)  
55  
51-85094 32-Pin STSOP (Pb-Free)  
Industrial  
Package Diagram  
Figure 8. 32-Pin Shrunk Thin Small Outline Package (8 x 13.4 mm), 51-85094  
51-85094-*D  
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CY62148ESL MoBL®  
Document History Page  
Document Title: CY62148ESL MoBL® 4-Mbit (512K x 8) Static RAM  
Document Number: 001-50045  
Rev.  
ECN No.  
Orig. of  
Change  
Submission  
Date  
Description of Change  
**  
2612938  
VKN/PYRS  
01/21/09 New data sheet  
Sales, Solutions, and Legal Information  
Worldwide Sales and Design Support  
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office  
closest to you, visit us at cypress.com/sales.  
Products  
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© Cypress Semiconductor Corporation, 2009. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any  
circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical,  
life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical  
components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems  
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.  
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),  
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,  
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress  
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without  
the express written permission of Cypress.  
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES  
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not  
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where  
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer  
assumes all risk of such use and in doing so indemnifies Cypress against all charges.  
Use may be limited by and subject to the applicable Cypress software license agreement.  
Document #: 001-50045 Rev. **  
Revised January 21, 2009  
Page 10 of 10  
MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor. All product and company names mentioned in this document are the  
trademarks of their respective holders.  
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