[[]]]]]]]]]]]]]]]]]]]]]]]]]]]]]
2N4123
TO-92
C
B
E
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
30
40
V
V
Collector-Base Voltage
Emitter-Base Voltage
5.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
mA
°C
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N4123
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
mW
mW/°C
°C/W
Rθ
JC
Thermal Resistance, Junction to Ambient
200
Rθ
JA
°C/W
2001 Fairchild Semiconductor Corporation
2N4123, Rev A
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
500
400
300
200
100
0
V CE = 5V
0.15
0.1
β = 10
125 °C
125 °C
25 °C
25 °C
0.05
- 40 °C
- 40 °C
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
V
= 5V
1
β
= 10
CE
- 40 °C
- 40 °C
0.8
0.6
0.4
25 °C
25 °C
125 °C
125 °C
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Capacitance vs
Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
10
500
f = 1.0 MHz
VCB= 30V
100
10
1
5
4
C
ibo
3
2
C
0.1
obo
1
0.1
25
50
75
100
125
150
1
10
100
°
TA - AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Noise Figure vs Frequency
Noise Figure vs Source Resistance
12
12
10
8
I
= 1.0 mA
C
R
V CE = 5.0V
I
= 1.0 mA
C
= 200Ω
S
10
8
I
= 50 µA
= 1.0 kΩ
I
= 5.0 mA
C
S
C
R
I
= 50 µA
C
I
= 0.5 mA
C
R
6
6
= 200Ω
S
I
= 100 µA
4
4
C
2
2
I
= 100 µA, R = 500 Ω
C
S
0
0
0.1
1
10
100
0.1
1
10
100
f - FREQUENCY (kHz)
R
S
- SOURCE RESISTANCE (
)
kΩ
Power Dissipation vs
Ambient Temperature
Current Gain and Phase Angle
vs Frequency
1
0.75
0.5
50
0
45
40
35
30
25
20
15
10
5
20
40
h fe
SOT-223
60
80
100
120
TO-92
θ
SOT-23
140
160
180
VCE = 40V
0.25
0
I C = 10 mA
0
1
10
100
1000
0
25
50
75
100
125
150
f - FREQUENCY (MHz)
TEMPERATURE (oC)
Turn-On Time vs Collector Current
Rise Time vs Collector Current
500
500
100
I
c
I
c
IB1= IB2
=
VCC = 40V
IB1= IB2
=
10
10
40V
15V
100
T
= 25°C
J
t
@ VCC = 3.0V
r
T
= 125°C
J
2.0V
t
10
5
10
5
@ VCB = 0V
d
1
10
- COLLECTOR CURRENT (mA)
100
1
10
- COLLECTOR CURRENT (mA)
100
I
C
I
C
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Storage Time vs Collector Current
Fall Time vs Collector Current
500
500
100
I
I
c
c
IB1= IB2
=
IB1= IB2
=
10
10
T
= 25°C
J
T
= 125°C
VCC = 40V
J
100
T
= 125°C
J
T
= 25°C
J
10
5
10
5
1
10
100
1
10
- COLLECTOR CURRENT (mA)
100
I
- COLLECTOR CURRENT (mA)
I
C
C
Current Gain
Output Admittance
500
100
100
10
1
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
T
f = 1.0 kHz
T
= 25oC
= 25oC
A
A
10
0.1
1
10
0.1
1
10
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Input Impedance
Voltage Feedback Ratio
100
10
7
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
T
f = 1.0 kHz
T
= 25oC
= 25oC
A
A
5
4
10
1
3
2
0.1
1
0.1
1
10
0.1
1
10
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
NPN General Purpose Amplifier
(continued)
Test Circuits
3.0 V
275 Ω
300 ns
10.6 V
Duty Cycle = 2%
10 KΩ
0
C1 < 4.0 pF
- 0.5 V
< 1.0 ns
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
3.0 V
t1
10 < t1
<
500 µs
10.9 V
275 Ω
Duty Cycle = 2%
10 KΩ
0
C1 < 4.0 pF
1N916
- 9.1 V
< 1.0 ns
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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