Cypress CY7C1570V18 User Manual

CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
72-Mbit DDR-II+ SRAM 2-Word Burst  
Architecture (2.5 Cycle Read Latency)  
Features  
Functional Description  
72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)  
400 MHz clock for high bandwidth  
The CY7C1566V18, CY7C1577V18, CY7C1568V18, and  
CY7C1570V18 are 1.8V Synchronous Pipelined SRAMs  
equipped with DDR-II+ architecture. The DDR-II+ consists of an  
SRAM core with advanced synchronous peripheral circuitry.  
Addresses for read and write are latched on alternate rising  
edges of the input (K) clock. Write data is registered on the rising  
edges of both K and K. Read data is driven on the rising edges  
of K and K. Each address location is associated with two 8-bit  
words (CY7C1566V18), 9-bit words (CY7C1577V18), 18-bit  
words (CY7C1568V18), or 36-bit words (CY7C1570V18) that  
burst sequentially into or out of the device.  
2-word burst for reducing address bus frequency  
Double Data Rate (DDR) interfaces  
(data transferred at 800 MHz) at 400 MHz  
Available in 2.5 clock cycle latency  
Two input clocks (K and K) for precise DDR timing  
SRAM uses rising edges only  
Asynchronous inputs include an output impedance matching  
Echo clocks (CQ and CQ) simplify data capture in high-speed  
systems  
input (ZQ). Synchronous data outputs (Q, sharing the same  
physical pins as the data inputs, D) are tightly matched to the two  
output echo clocks CQ/CQ, eliminating the need for separately  
capturing data from each individual DDR SRAM in the system  
design.  
Data valid pin (QVLD) to indicate valid data on the output  
Synchronous internally self-timed writes  
Core V = 1.8V ± 0.1V; IO V  
= 1.4V to V  
DD  
DD  
DDQ  
All synchronous inputs pass through input registers controlled by  
the K or K input clocks. All data outputs pass through output  
registers controlled by the K or K input clocks. Writes are  
conducted with on-chip synchronous self-timed write circuitry.  
HSTL inputs and variable drive HSTL output buffers  
Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)  
Offered in both Pb-free and non Pb-free packages  
JTAG 1149.1 compatible test access port  
Delay Lock Loop (DLL) for accurate data placement  
Configurations  
With Read Cycle Latency of 2.5 cycles:  
CY7C1566V18 – 8M x 8  
CY7C1577V18 – 8M x 9  
CY7C1568V18 – 4M x 18  
CY7C1570V18 – 2M x 36  
Selection Guide  
Description  
Maximum Operating Frequency  
Maximum Operating Current  
400 MHz  
375 MHz  
375  
333 MHz  
333  
300 MHz  
300  
Unit  
MHz  
mA  
400  
x8  
x9  
1400  
1400  
1400  
1400  
1300  
1300  
1300  
1300  
1200  
1200  
1200  
1200  
1100  
1100  
x18  
x36  
1100  
1100  
Note  
1. The QDR consortium specification for V  
is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting V  
DDQ  
DDQ  
= 1.4V to V  
.
DD  
Cypress Semiconductor Corporation  
Document Number: 001-06551 Rev. *E  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised March 11, 2008  
 
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Logic Block Diagram (CY7C1568V18)  
Write  
Reg  
Write  
Reg  
21  
A
(20:0)  
Address  
Register  
LD  
18  
K
K
Output  
Logic  
Control  
CLK  
Gen.  
R/W  
DOFF  
Read Data Reg.  
36  
CQ  
CQ  
V
18  
REF  
18  
18  
Reg.  
Reg.  
Reg.  
Control  
Logic  
R/W  
DQ  
[17:0]  
18  
BWS  
18  
[1:0]  
QVLD  
Logic Block Diagram (CY7C1570V18)  
Write  
Reg  
Write  
Reg  
20  
A
(19:0)  
Address  
Register  
LD  
36  
K
K
Output  
Logic  
Control  
CLK  
Gen.  
R/W  
DOFF  
Read Data Reg.  
72  
36  
CQ  
CQ  
V
REF  
36  
36  
Reg.  
Reg.  
Reg.  
Control  
Logic  
R/W  
DQ  
[35:0]  
36  
BWS  
36  
[3:0]  
QVLD  
Document Number: 001-06551 Rev. *E  
Page 3 of 28  
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Pin Configuration  
The pin configuration for CY7C1566V18, CY7C1577V18, CY7C1568V18, and CY7C1570V18 follow.  
165-Ball FBGA (15 x 17 x 1.4 mm) Pinout  
CY7C1566V18 (8M x 8)  
1
CQ  
NC  
NC  
NC  
NC  
NC  
NC  
DOFF  
NC  
NC  
NC  
NC  
NC  
NC  
TDO  
2
3
4
R/W  
A
5
6
K
K
A
7
8
LD  
A
9
10  
A
11  
CQ  
DQ3  
NC  
NC  
DQ2  
NC  
NC  
ZQ  
A
B
C
D
E
F
A
A
NWS  
NC/144M  
A
1
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
DQ4  
NC  
DQ5  
NC/288M  
A
NWS  
A
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
0
V
V
V
SS  
SS  
SS  
SS  
V
V
V
V
V
V
SS  
SS  
DD  
DD  
DD  
DD  
DD  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
DD  
DD  
DD  
DD  
DD  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
V
V
V
V
V
V
V
V
V
V
G
H
J
V
V
V
V
REF  
REF  
DDQ  
DDQ  
NC  
NC  
NC  
DQ1  
NC  
NC  
DQ0  
NC  
NC  
NC  
TDI  
K
L
NC  
DQ6  
NC  
NC  
NC  
NC  
NC  
DQ7  
A
NC  
NC  
NC  
NC  
NC  
A
NC  
NC  
V
V
V
V
SS  
SS  
SS  
SS  
M
N
P
R
V
V
NC  
SS  
SS  
SS  
NC  
V
A
A
A
A
A
A
A
V
NC  
SS  
NC  
A
A
QVLD  
NC  
A
A
NC  
TCK  
TMS  
CY7C1577V18 (8M x 9)  
1
CQ  
NC  
NC  
NC  
NC  
NC  
NC  
DOFF  
NC  
NC  
NC  
NC  
NC  
NC  
TDO  
2
3
4
5
NC  
6
K
K
A
7
8
9
10  
A
11  
CQ  
DQ3  
NC  
A
B
C
D
E
F
A
A
R/W  
A
NC/144M  
LD  
A
A
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
DQ4  
NC  
DQ5  
NC/288M  
A
BWS  
A
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
0
V
V
V
SS  
SS  
SS  
SS  
V
V
V
V
V
V
NC  
SS  
SS  
DD  
DD  
DD  
DD  
DD  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
DD  
DD  
DD  
DD  
DD  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DQ2  
NC  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
V
V
V
V
V
V
V
V
V
V
G
H
J
NC  
V
V
V
V
REF  
ZQ  
REF  
DDQ  
DDQ  
NC  
NC  
NC  
NC  
DQ1  
NC  
NC  
K
L
NC  
NC  
NC  
NC  
DQ7  
A
NC  
NC  
NC  
NC  
NC  
A
NC  
DQ6  
NC  
V
V
NC  
DQ0  
NC  
SS  
SS  
SS  
SS  
M
N
P
R
V
V
V
V
NC  
SS  
SS  
SS  
NC  
V
A
A
A
A
A
A
A
V
NC  
NC  
SS  
NC  
A
A
QVLD  
NC  
A
A
NC  
DQ8  
TDI  
TCK  
TMS  
Note  
2. NC/144M and NC/288M are not connected to the die and can be tied to any voltage level.  
Document Number: 001-06551 Rev. *E  
Page 4 of 28  
 
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Pin Configuration (continued)  
[2]  
The pin configuration for CY7C1566V18, CY7C1577V18, CY7C1568V18, and CY7C1570V18 follow.  
165-Ball FBGA (15 x 17 x 1.4 mm) Pinout  
CY7C1568V18 (4M x 18)  
1
CQ  
NC  
NC  
NC  
NC  
NC  
NC  
DOFF  
NC  
NC  
NC  
NC  
NC  
NC  
TDO  
2
A
3
4
R/W  
A
5
6
K
7
8
LD  
A
9
10  
A
11  
CQ  
A
B
C
D
E
F
A
BWS  
NC/144M  
A
1
DQ9  
NC  
NC  
NC  
DQ12  
NC  
NC  
NC/288M  
A
K
BWS  
A
NC  
NC  
NC  
NC  
NC  
NC  
NC  
DQ7  
NC  
NC  
NC  
NC  
DQ8  
NC  
0
NC  
V
V
NC  
V
SS  
SS  
SS  
SS  
DQ10  
DQ11  
NC  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
NC  
SS  
SS  
DD  
DD  
DD  
DD  
DD  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
DD  
DD  
DD  
DD  
DD  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DQ6  
DQ5  
NC  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
V
V
V
V
V
V
V
V
V
V
G
H
J
DQ13  
V
V
V
V
REF  
ZQ  
REF  
DDQ  
DDQ  
NC  
NC  
NC  
DQ14  
NC  
NC  
DQ4  
NC  
NC  
K
L
NC  
NC  
NC  
NC  
NC  
A
DQ3  
DQ2  
NC  
DQ15  
NC  
V
V
V
V
NC  
SS  
SS  
SS  
SS  
M
N
P
R
NC  
V
V
DQ1  
NC  
SS  
SS  
SS  
NC  
DQ16  
DQ17  
A
V
A
A
A
A
A
A
A
V
NC  
SS  
NC  
A
A
QVLD  
NC  
A
A
NC  
DQ0  
TDI  
TCK  
TMS  
CY7C1570V18 (2M x 36)  
1
CQ  
NC  
NC  
NC  
NC  
NC  
NC  
DOFF  
NC  
NC  
NC  
NC  
NC  
NC  
TDO  
2
NC/144M  
DQ27  
NC  
3
4
5
BWS  
BWS  
A
6
K
7
BWS  
BWS  
A
8
9
10  
A
11  
A
B
C
D
E
F
A
R/W  
A
LD  
A
A
CQ  
2
3
1
0
DQ18  
DQ28  
DQ19  
DQ20  
DQ21  
DQ22  
K
NC  
NC  
NC  
NC  
NC  
NC  
NC  
DQ8  
DQ7  
DQ16  
DQ6  
DQ5  
DQ14  
ZQ  
V
V
NC  
V
DQ17  
NC  
SS  
SS  
SS  
SS  
DQ29  
NC  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
SS  
SS  
DD  
DD  
DD  
DD  
DD  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
SS  
DD  
DD  
DD  
DD  
DD  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DQ15  
NC  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DDQ  
DQ30  
DQ31  
V
V
V
V
V
V
V
V
V
V
G
H
J
NC  
V
V
V
V
REF  
REF  
DDQ  
DDQ  
NC  
NC  
DQ32  
DQ23  
DQ24  
DQ34  
DQ25  
DQ26  
A
NC  
DQ13  
DQ12  
NC  
DQ4  
DQ3  
DQ2  
DQ1  
DQ10  
DQ0  
TDI  
K
L
NC  
NC  
NC  
NC  
NC  
A
DQ33  
NC  
V
V
SS  
SS  
SS  
SS  
M
N
P
R
V
V
V
V
DQ11  
NC  
SS  
SS  
SS  
DQ35  
NC  
V
A
A
A
A
A
A
A
V
SS  
A
A
QVLD  
NC  
A
A
DQ9  
TMS  
TCK  
Document Number: 001-06551 Rev. *E  
Page 5 of 28  
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Pin Definitions  
Pin Name  
DQ  
IO  
Pin Description  
Data Input and Output Signals. Inputs are sampled on the rising edge of K and K clocks during valid  
write operations. These pins drive out the requested data during a read operation. Valid data is driven out  
on the rising edge of both the K and K clocks during read operations. When read access is deselected,  
Input and  
Output  
Synchronous  
[x:0]  
Q
are automatically tri-stated.  
[x:0]  
CY7C1566V18 DQ  
CY7C1577V18 DQ  
CY7C1568V18 DQ  
CY7C1570V18 DQ  
[7:0]  
[8:0]  
[17:0]  
[35:0]  
LD  
Input  
Synchronous Load. Sampled on the rising edge of the K clock. This input is brought LOW when a bus  
Synchronous cycle sequence is defined. This definition includes address and read or write direction. All transactions  
operate on a burst of 2 data. LD must meet the setup and hold times around edge of K.  
NWS ,  
Input  
Nibble Write Select 0, 1 Active LOW (CY7C1566V18 only). Sampled on the rising edge of the K and  
0
NWS  
Synchronous K clocks during write operations. Used to select the nibble that is written into the device during the current  
portion of the write operations. Nibbles not written remain unaltered.  
1
NWS controls D  
and NWS controls D  
.
0
[3:0]  
1
[7:4]  
All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select  
ignores the corresponding nibble of data and does not write into the device.  
BWS  
BWS  
Input  
Byte Write Select 0, 1, 2, and 3 Active LOW. Sampled on the rising edge of the K and K clocks during  
,
,
0
1
Synchronous write operations. Used to select which byte is written into the device during the current portion of the write  
operations. Bytes not written remain unaltered.  
BWS ,  
2
CY7C1577V18 BWS controls D  
BWS  
0
[8:0]  
[8:0]  
[8:0]  
3
CY7C1568V18 BWS controls D  
and BWS controls D  
0
1
[17:9].  
CY7C1570V18 BWS controls D  
, BWS controls D  
,
0
1
[17:9]  
BWS controls D  
and BWS controls D  
.
2
[26:18]  
3
[35:27]  
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select  
ignores the corresponding byte of data and does not write into the device.  
A
Input  
Address Inputs. Sampled on the rising edge of the K clock during active read and write operations. These  
Synchronous address inputs are multiplexed for both read and write operations. Internally, the device is organized as  
8M x 8 (2 arrays each of 4M x 8) for CY7C1566V18, 8M x 9 (2 arrays each of 4M x 9) for CY7C1577V18,  
4M x 18 (2 arrays each of 2M x 18) for CY7C1568V18, and 2M x 36 (2 arrays each of 1M x 36) for  
CY7C1570V18.  
R/W  
Input  
Synchronous Read/Write Input. When LD is LOW, this input designates the access type (read when  
Synchronous R/W is HIGH, write when R/W is LOW) for loaded address. R/W must meet the setup and hold times  
around edge of K.  
QVLD  
K
Valid Output Valid Output Indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and CQ.  
Indicator  
Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device  
and to drive out data through Q  
edge of K.  
when in single clock mode. All accesses are initiated on the rising  
[x:0]  
K
Input Clock Negative Input Clock Input. K is used to capture synchronous data presented to the device and to drive  
out data through Q when in single clock mode.  
[x:0]  
CQ  
CQ  
Clock Output Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input clock  
(K) of the DDR-II+. The timing for the echo clocks is shown in Switching Characteristics on page 23.  
Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input clock  
(K) of the DDR-II+. The timing for the echo clocks is shown in Switching Characteristics on page 23.  
Clock Output  
Document Number: 001-06551 Rev. *E  
Page 6 of 28  
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Pin Definitions (continued)  
Pin Name  
IO  
Pin Description  
ZQ  
Input  
Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus  
impedance. CQ, CQ, and Q output impedance are set to 0.2 x RQ, where RQ is a resistor connected  
[x:0]  
between ZQ and ground. Alternatively, this pin is connected directly to V  
that enables the minimum  
DDQ  
impedance mode. This pin is not connected directly to GND or is left unconnected.  
DOFF  
Input  
DLL Turn Off Active LOW. Connecting this pin to ground turns off the DLL inside the device. The timing  
in the DLL turned off operation is different from that listed in this datasheet. For normal operation, this pin  
is connected to a pull up through a 10 Kohm or less pull up resistor. The device behaves in DDR-I mode  
when the DLL is turned off. In this mode, the device is operated at a frequency of up to 167 MHz with  
DDR-I timing.  
TDO  
Output  
Input  
Input  
Input  
N/A  
TDO for JTAG.  
TCK  
TCK Pin for JTAG.  
TDI  
TDI Pin for JTAG.  
TMS  
TMS Pin for JTAG.  
NC  
Not Connected to the Die. Is tied to any voltage level.  
Not Connected to the Die. Is tied to any voltage level.  
Not Connected to the Die. Is tied to any voltage level.  
Reference Voltage Input. Static input is used to set the reference level for HSTL inputs, outputs, and AC  
NC/144M  
NC/288M  
N/A  
N/A  
V
Input  
REF  
Reference measurement points.  
V
V
V
Power Supply Power Supply Inputs to the Core of the Device.  
DD  
Ground  
Ground for the Device.  
SS  
Power Supply Power Supply Inputs for the Outputs of the Device.  
DDQ  
Document Number: 001-06551 Rev. *E  
Page 7 of 28  
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
the positive input clock (K). Doing so pipelines the data flow such  
that 18 bits of data is transferred into the device on every rising  
edge of the input clocks (K and K).  
Functional Overview  
The CY7C1566V18, CY7C1577V18, CY7C1568V18, and  
CY7C1570V18 are synchronous pipelined Burst SRAMs  
equipped with a DDR interface.  
When the write access is deselected, the device ignores all  
inputs after the pending write operations are completed.  
Accesses are initiated on the positive input clock (K). All  
synchronous input and output timing is referenced from the rising  
edge of the input clocks (K and K).  
Byte Write Operations  
Byte write operations are supported by the CY7C1568V18. A  
write operation is initiated as described in the Write Operations  
section. The bytes that are written are determined by BWS and  
All synchronous data inputs (D  
) pass through input registers  
[x:0]  
controlled by the rising edge of the input clocks (K and K). All  
synchronous data outputs (Q ) pass through output registers  
0
BWS , which are sampled with each set of 18-bit data words.  
1
[x:0]  
Asserting the appropriate Byte Write Select input during the data  
portion of a write latches the data being presented and writes it  
into the device. Deasserting the Byte Write Select input during  
the data portion of a write enables the data stored in the device  
for that byte to remain unaltered. This feature can be used to  
simplify read, modify, and or write operations to a byte write  
operation.  
controlled by the rising edge of the input clocks (K and K).  
All synchronous control (R/W, LD, NWS , BWS ) inputs  
[x:0]  
[x:0]  
pass through input registers controlled by the rising edge of the  
input clock (K).  
CY7C1568V18 is described in the following sections. The same  
basic descriptions apply to CY7C1566V18, CY7C1577V18, and  
CY7C1570V18.  
Double Date Rate Operation  
Read Operations  
The CY7C1568V18 enables high-performance operation  
through high clock frequencies (achieved through pipelining) and  
DDR mode of operation. The CY7C1568V18 requires a  
minimum of two No Operation (NOP) cycles during transition  
from a read to a write cycle. At higher frequencies, some appli-  
cations require a third NOP cycle to avoid contention.  
The CY7C1568V18 is organized internally as two arrays of 2M x  
18. Accesses are completed in a burst of 2 sequential 18-bit data  
words. Read operations are initiated by asserting R/W HIGH and  
LD LOW at the rising edge of the positive input clock (K). The  
address presented to the address inputs is stored in the read  
address register. Following the next two K clock rise, the corre-  
sponding 18-bit word of data from this address location is driven  
If a read occurs after a write cycle, address and data for the write  
are stored in registers. The write information is stored because  
the SRAM cannot perform the last word write to the array without  
conflicting with the read. The data stays in this register until the  
next write cycle occurs. On the first write cycle after the read(s),  
the stored data from the earlier write is written into the SRAM  
array. This is called a Posted write.  
onto the Q  
using K as the output timing reference. On the  
[17:0]  
subsequent rising edge of K, the next 18-bit data word is driven  
onto the Q . The requested data is valid 0.45 ns from the  
[17:0]  
rising edge of the input clock (K and K). To maintain the internal  
logic, each read access must be allowed to complete. Read  
accesses are initiated on every rising edge of the positive input  
clock (K).  
If a read is performed on the same address on which a write is  
performed in the previous cycle, the SRAM reads out the most  
current data. The SRAM does this by bypassing the memory  
array and reading the data from the registers.  
When read access is deselected, the CY7C1568V18 first  
completes the pending read transactions. Synchronous internal  
circuitry automatically tri-states the output following the next  
rising edge of the negative input clock (K). This enables a  
seamless transition between devices without the insertion of wait  
states in a depth expanded memory.  
Depth Expansion  
Depth expansion requires replicating the LD control signal for  
each bank. All other control signals can be common between  
banks as appropriate.  
Write Operations  
Write operations are initiated by asserting R/W LOW and LD  
LOW at the rising edge of the positive input clock (K). The  
address presented to address inputs is stored in the write  
address register. On the following K clock rise, the data  
Programmable Impedance  
An external resistor, RQ, must be connected between the ZQ pin  
on the SRAM and V to allow the SRAM to adjust its output  
SS  
driver impedance. The value of RQ must be 5x the value of the  
intended line impedance driven by the SRAM. The allowable  
range of RQ to guarantee impedance matching with a tolerance  
of ±15%, is between 175Ω and 350Ω, with V  
output impedance is adjusted every 1024 cycles upon power up  
to account for drifts in supply voltage and temperature.  
presented to D  
data register, provided BWS  
is latched and stored into the 18-bit write  
[17:0]  
are both asserted active. On the  
[1:0]  
subsequent rising edge of the negative input clock (K), the infor-  
mation presented to D is also stored into the write data  
= 1.5V. The  
DDQ  
[17:0]  
register, provided BWS  
are both asserted active. The 36 bits  
[1:0]  
of data are then written into the memory array at the specified  
location. Write accesses can be initiated on every rising edge of  
Document Number: 001-06551 Rev. *E  
Page 8 of 28  
 
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Echo Clocks  
DLL  
Echo clocks are provided on the DDR-II+ to simplify data capture  
on high-speed systems. Two echo clocks are generated by the  
DDR-II+. CQ is referenced with respect to K and CQ is refer-  
enced with respect to K. These are free-running clocks and are  
synchronized to the input clock of the DDR-II+. The timing for the  
echo clocks is shown in Switching Characteristics on page 23.  
These chips use a Delay Lock Loop (DLL) that is designed to  
function between 120 MHz and the specified maximum clock  
frequency. The DLL may be disabled by applying ground to the  
DOFF pin. When the DLL is turned off, the device behaves in  
DDR-I mode (with 1.0 cycle latency and a longer access time).  
For more information, refer to the application note, “DLL Consid-  
erations in QDRII/DDRII/QDRII+/DDRII+”. The DLL can also be  
reset by slowing or stopping the input clocks K and K for a  
minimum of 30ns. However, it is not necessary to reset the DLL  
to lock to the desired frequency. During Power-up, when the  
DOFF is tied HIGH, the DLL gets locked after 2048 cycles of  
stable clock.  
Valid Data Indicator (QVLD)  
QVLD is provided on the DDR-II+ to simplify data capture on high  
speed systems. The QVLD is generated by the DDR-II+ device  
along with data output. This signal is also edge aligned with the  
echo clock and follows the timing of any data pin. This signal is  
asserted half a cycle before valid data arrives.  
Application Example  
Figure 1 shows two DDR-II+ used in an application.  
Figure 1. Application Example  
ZQ  
CQ/CQ  
K
K
ZQ  
CQ/CQ  
K
K
SRAM#1  
LD R/W  
SRAM#2  
DQ  
DQ  
R = 250ohms  
R = 250ohms  
LD R/W  
A
A
DQ  
Addresses  
Cycle Start  
R/W  
Source CLK  
Source CLK  
BUS  
MASTER  
(CPU or ASIC)  
Echo Clock1/Echo Clock1  
Echo Clock2/Echo Clock2  
Document Number: 001-06551 Rev. *E  
Page 9 of 28  
 
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Truth Table  
The truth table for CY7C1566V18, CY7C1577V18, CY7C1568V18, and CY7C1570V18 follows.  
Operation  
K
LD  
R/W  
DQ  
DQ  
Write Cycle:  
Load address; wait one cycle;  
L-H  
L
L
D(A) at K(t + 1) ↑  
D(A+1) at K(t + 1) ↑  
input write data on consecutive K and K rising edges.  
Read Cycle: (2.5 cycle Latency)  
Load address; wait two and half cycle;  
read data on consecutive K and K rising edges.  
L-H  
L
H
Q(A) at K(t + 2) ↑  
Q(A+1) at K(t + 3) ↑  
NOP: No Operation  
L-H  
H
X
X
X
High Z  
High Z  
Standby: Clock Stopped  
Stopped  
Previous State  
Previous State  
Write Cycle Descriptions  
The write cycle description table for CY7C1566V18 and CY7C1568V18 follows.  
BWS / BWS /  
0
1
K
Comments  
K
NWS  
NWS  
1
0
L
L
L
L
L–H  
During the data portion of a write sequence:  
CY7C1566V18 both nibbles (D  
) are written into the device.  
[7:0]  
CY7C1568V18 both bytes (D  
) are written into the device.  
[17:0]  
L–H  
L-H During the data portion of a write sequence:  
CY7C1566V18 both nibbles (D  
) are written into the device.  
) are written into the device.  
[7:0]  
CY7C1568V18 both bytes (D  
[17:0]  
L
H
H
L
During the data portion of a write sequence:  
CY7C1566V18 only the lower nibble (D  
) is written into the device, D  
remains unaltered.  
remains unaltered.  
[3:0]  
[7:4]  
CY7C1568V18 only the lower byte (D  
) is written into the device, D  
[8:0]  
[17:9]  
L
L–H During the data portion of a write sequence:  
CY7C1566V18 only the lower nibble (D  
) is written into the device, D  
remains unaltered.  
remains unaltered.  
[3:0]  
[7:4]  
CY7C1568V18 only the lower byte (D  
) is written into the device, D  
[8:0]  
[17:9]  
H
H
L–H  
During the data portion of a write sequence:  
CY7C1566V18 only the upper nibble (D  
) is written into the device, D  
) is written into the device, D  
remains unaltered.  
[3:0]  
[7:4]  
CY7C1568V18 only the upper byte (D  
remains unaltered.  
[17:9]  
[8:0]  
L
L–H During the data portion of a write sequence:  
CY7C1566V18 only the upper nibble (D  
) is written into the device, D  
) is written into the device, D  
remains unaltered.  
remains unaltered.  
[7:4]  
[3:0]  
[8:0]  
CY7C1568V18 only the upper byte (D  
[17:9]  
H
H
H
H
L–H  
No data is written into the devices during this portion of a write operation.  
L–H No data is written into the devices during this portion of a write operation.  
Notes  
3. X = “Don’t Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.  
4. Device powers up deselected with the outputs in a tri-state condition.  
5. “A” represents address location latched by the devices when transaction was initiated. A + 1 represents the address sequence in the burst.  
6. “t” represents the cycle at which a read/write operation is started. t + 1 and t + 2 are the first and second clock cycles succeeding the “t” clock cycle.  
7. Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges.  
8. Cypress recommends that K = K = HIGH when clock is stopped. This is not essential but permits most rapid restart by overcoming transmission line charging  
symmetrically.  
9. Is based on a write cycle is initiated per the Write Cycle Descriptions table. NWS , NWS , BWS , BWS , BWS , and BWS are altered on different portions of a write  
0
1
0
1
2
3
cycle, as long as the setup and hold requirements are met.  
Document Number: 001-06551 Rev. *E  
Page 10 of 28  
               
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Write Cycle Descriptions  
The write cycle description table for CY7C1577V18 follows.  
BWS  
K
L–H  
K
Comments  
0
L
L
During the data portion of a write sequence, the single byte (D  
) is written into the device.  
) is written into the device.  
[8:0]  
L–H During the data portion of a write sequence, the single byte (D  
[8:0]  
H
H
L–H  
No data is written into the device during this portion of a write operation.  
L–H No data is written into the device during this portion of a write operation.  
Write Cycle Descriptions  
The write cycle description table for CY7C1570V18 follows.  
BWS  
BWS  
BWS  
BWS  
3
K
K
Comments  
0
1
2
L
L
L
L
L–H  
During the data portion of a write sequence, all four bytes (D  
the device.  
) are written into  
) are written into  
[35:0]  
L
L
L
H
H
L
L
H
H
H
H
L
L
H
H
H
H
H
H
L
L–H  
L–H During the data portion of a write sequence, all four bytes (D  
the device.  
[35:0]  
During the data portion of a write sequence, only the lower byte (D  
) is written  
) is written  
[8:0]  
[8:0]  
into the device. D  
remains unaltered.  
[35:9]  
L
L–H During the data portion of a write sequence, only the lower byte (D  
into the device. D remains unaltered.  
[35:9]  
H
H
H
H
H
H
L–H  
During the data portion of a write sequence, only the byte (D  
) is written into  
[17:9]  
the device. D  
and D  
remain unaltered.  
[8:0]  
[35:18]  
L
L–H During the data portion of a write sequence, only the byte (D  
the device. D and D remain unaltered.  
) is written into  
[17:9]  
[8:0]  
[35:18]  
H
H
H
H
L–H  
During the data portion of a write sequence, only the byte (D  
) is written into  
) is written into  
) is written into  
) is written into  
[26:18]  
[26:18]  
[35:27]  
[35:27]  
the device. D  
and D  
remain unaltered.  
[17:0]  
[35:27]  
L
L–H During the data portion of a write sequence, only the byte (D  
the device. D and D remain unaltered.  
[17:0]  
[35:27]  
H
H
L–H  
During the data portion of a write sequence, only the byte (D  
the device. D remains unaltered.  
[26:0]  
L
L–H During the data portion of a write sequence, only the byte (D  
the device. D remains unaltered.  
[26:0]  
H
H
H
H
H
H
H
H
L–H  
No data is written into the device during this portion of a write operation.  
L–H No data is written into the device during this portion of a write operation.  
Document Number: 001-06551 Rev. *E  
Page 11 of 28  
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Instruction Register  
IEEE 1149.1 Serial Boundary Scan (JTAG)  
Three-bit instructions can be serially loaded into the instruction  
register. This register is loaded when it is placed between the TDI  
and TDO pins, as shown in TAP Controller Block Diagram on  
page 15. Upon power up, the instruction register is loaded with  
the IDCODE instruction. It is also loaded with the IDCODE  
instruction if the controller is placed in a reset state, as described  
in the previous section.  
These SRAMs incorporate a serial boundary scan Test Access  
Port (TAP) in the FBGA package. This part is fully compliant with  
IEEE Standard #1149.1-2001. The TAP operates using JEDEC  
standard 1.8V IO logic levels.  
Disabling the JTAG Feature  
It is possible to operate the SRAM without using the JTAG  
feature. To disable the TAP controller, TCK must be tied LOW  
When the TAP controller is in the Capture-IR state, the two least  
significant bits are loaded with a binary “01” pattern to allow for  
fault isolation of the board level serial test path.  
(V ) to prevent clocking of the device. TDI and TMS are inter-  
SS  
nally pulled up and may be unconnected. They may alternatively  
be connected to V through a pull up resistor. TDO must be left  
unconnected. Upon power up, the device comes up in a reset  
state, which does not interfere with the operation of the device.  
Bypass Register  
DD  
To save time when serially shifting data through registers, it is  
sometimes advantageous to skip certain chips. The bypass  
register is a single-bit register that can be placed between TDI  
and TDO pins. This enables shifting of data through the SRAM  
with minimal delay. The bypass register is set LOW (V ) when  
the BYPASS instruction is executed.  
Test Access Port—Test Clock  
The test clock is used only with the TAP controller. All inputs are  
captured on the rising edge of TCK. All outputs are driven from  
the falling edge of TCK.  
SS  
Boundary Scan Register  
Test Mode Select (TMS)  
The boundary scan register is connected to all of the input and  
output pins on the SRAM. Several No Connect (NC) pins are also  
included in the scan register to reserve pins for higher density  
devices.  
The TMS input is used to give commands to the TAP controller  
and is sampled on the rising edge of TCK. This pin may be left  
unconnected if the TAP is not used. The pin is pulled up inter-  
nally, resulting in a logic HIGH level.  
The boundary scan register is loaded with the contents of the  
RAM input and output ring when the TAP controller is in the  
Capture-DR state and is then placed between the TDI and TDO  
pins when the controller is moved to the Shift-DR state. The  
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can  
be used to capture the contents of the input and output ring.  
Test Data-In (TDI)  
The TDI pin is used to serially input information into the registers  
and can be connected to the input of any of the registers. The  
register between TDI and TDO is chosen by the instruction that  
is loaded into the TAP instruction register. For information about  
loading the instruction register, see the TAP Controller State  
Diagram on page 14. TDI is internally pulled up and can be  
unconnected if the TAP is unused in an application. TDI is  
connected to the most significant bit (MSB) on any register.  
The Boundary Scan Order on page 18 shows the order in which  
the bits are connected. Each bit corresponds to one of the bumps  
on the SRAM package. The MSB of the register is connected to  
TDI, and the LSB is connected to TDO.  
Identification (ID) Register  
Test Data-Out (TDO)  
The ID register is loaded with a vendor-specific, 32-bit code  
during the Capture-DR state when the IDCODE command is  
loaded in the instruction register. The IDCODE is hardwired into  
the SRAM and can be shifted out when the TAP controller is in  
the Shift-DR state. The ID register has a vendor code and other  
The TDO output pin is used to serially clock data out from the  
registers. The output is active, depending upon the current state  
of the TAP state machine (see Instruction Codes on page 17).  
The output changes on the falling edge of TCK. TDO is  
connected to the least significant bit (LSB) of any register.  
Performing a TAP Reset  
A Reset is performed by forcing TMS HIGH (V ) for five rising  
TAP Instruction Set  
DD  
edges of TCK. This Reset does not affect the operation of the  
SRAM and can be performed while the SRAM is operating. At  
power up, the TAP is reset internally to ensure that TDO comes  
up in a high-Z state.  
Eight different instructions are possible with the three-bit  
instruction register. All combinations are listed in Instruction  
Codes on page 17. Three of these instructions are listed as  
RESERVED and must not be used. The other five instructions  
are described in this section in detail.  
TAP Registers  
Instructions are loaded into the TAP controller during the Shift-IR  
state when the instruction register is placed between TDI and  
TDO. During this state, instructions are shifted through the  
instruction register through the TDI and TDO pins. To execute  
the instruction once it is shifted in, the TAP controller must be  
moved into the Update-IR state.  
Registers are connected between the TDI and TDO pins to scan  
the data in and out of the SRAM test circuitry. Only one register  
can be selected at a time through the instruction registers. Data  
is serially loaded into the TDI pin on the rising edge of TCK. Data  
is output on the TDO pin on the falling edge of TCK.  
Document Number: 001-06551 Rev. *E  
Page 12 of 28  
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
IDCODE  
The shifting of data for the SAMPLE and PRELOAD phases can  
occur concurrently when required, that is, while the data  
captured is shifted out, the preloaded data can be shifted in.  
The IDCODE instruction loads a vendor-specific, 32-bit code into  
the instruction register. It also places the instruction register  
between the TDI and TDO pins and shifts the IDCODE out of the  
device when the TAP controller enters the Shift-DR state. The  
IDCODE instruction is loaded into the instruction register at  
power up or whenever the TAP controller is supplied a  
Test-Logic-Reset state.  
BYPASS  
When the BYPASS instruction is loaded in the instruction register  
and the TAP is placed in a Shift-DR state, the bypass register is  
placed between the TDI and TDO pins. The advantage of the  
BYPASS instruction is that it shortens the boundary scan path  
when multiple devices are connected together on a board.  
SAMPLE Z  
The SAMPLE Z instruction connects the boundary scan register  
between the TDI and TDO pins when the TAP controller is in a  
Shift-DR state. The SAMPLE Z command puts the output bus  
into a High-Z state until the next command is supplied during the  
Update IR state.  
EXTEST  
The EXTEST instruction drives the preloaded data out through  
the system output pins. This instruction also connects the  
boundary scan register for serial access between the TDI and  
TDO in the Shift-DR controller state.  
SAMPLE/PRELOAD  
EXTEST OUTPUT BUS TRI-STATE  
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When  
the SAMPLE/PRELOAD instructions are loaded into the  
instruction register and the TAP controller is in the Capture-DR  
state, a snapshot of data on the input and output pins is captured  
in the boundary scan register.  
IEEE Standard 1149.1 mandates that the TAP controller be able  
to put the output bus into a tri-state mode.  
The boundary scan register has a special bit located at bit #108.  
When this scan cell, called the “extest output bus tri-state,” is  
latched into the preload register during the Update-DR state in  
the TAP controller, it directly controls the state of the output  
(Q-bus) pins, when the EXTEST is entered as the current  
instruction. When HIGH, it enables the output buffers to drive the  
output bus. When LOW, this bit places the output bus into a  
High-Z condition.  
The user must be aware that the TAP controller clock can only  
operate at a frequency up to 20 MHz, while the SRAM clock  
operates more than an order of magnitude faster. Because there  
is a large difference in the clock frequencies, it is possible that  
during the Capture-DR state, an input or output undergoes a  
transition. The TAP may then try to capture a signal while in  
transition (metastable state). This does not harm the device, but  
there is no guarantee as to the value that is captured.  
Repeatable results may not be possible.  
This bit can be set by entering the SAMPLE/PRELOAD or  
EXTEST command, and then shifting the desired bit into that cell,  
during the Shift-DR state. During Update-DR, the value loaded  
into that shift-register cell latches into the preload register. When  
the EXTEST instruction is entered, this bit directly controls the  
output Q-bus pins. Note that this bit is pre-set HIGH to enable  
the output when the device is powered up, and also when the  
TAP controller is in the Test-Logic-Reset state.  
To guarantee that the boundary scan register captures the  
correct value of a signal, the SRAM signal must be stabilized  
long enough to meet the TAP controller's capture setup plus hold  
times (t and t ). The SRAM clock input might not be captured  
CS  
CH  
correctly if there is no way in a design to stop (or slow) the clock  
during a SAMPLE/PRELOAD instruction. If this is an issue, it is  
still possible to capture all other signals and simply ignore the  
value of the CK and CK captured in the boundary scan register.  
Reserved  
These instructions are not implemented but are reserved for  
future use. Do not use these instructions.  
Once the data is captured, it is possible to shift out the data by  
putting the TAP into the Shift-DR state. This places the boundary  
scan register between the TDI and TDO pins.  
PRELOAD places an initial data pattern at the latched parallel  
outputs of the boundary scan register cells before the selection  
of another boundary scan test operation.  
Document Number: 001-06551 Rev. *E  
Page 13 of 28  
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
TAP Controller State Diagram  
The state diagram for the TAP controller follows.  
TEST-LOGIC  
1
RESET  
0
1
1
1
SELECT  
TEST-LOGIC/  
SELECT  
0
IR-SCAN  
IDLE  
DR-SCAN  
0
0
1
1
CAPTURE-DR  
0
CAPTURE-IR  
0
0
0
SHIFT-DR  
1
SHIFT-IR  
1
1
0
1
EXIT1-DR  
0
EXIT1-IR  
0
0
PAUSE-DR  
1
PAUSE-IR  
1
0
0
EXIT2-DR  
1
EXIT2-IR  
1
UPDATE-IR  
UPDATE-DR  
1
1
0
0
Note  
10. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.  
Document Number: 001-06551 Rev. *E  
Page 14 of 28  
   
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
TAP Controller Block Diagram  
0
Bypass Register  
2
1
1
1
0
0
0
Selection  
TDI  
Selection  
Circuitry  
TDO  
Instruction Register  
Circuitry  
31 30  
29  
.
.
2
Identification Register  
.
108  
.
.
.
2
Boundary Scan Register  
TCK  
TMS  
TAP Controller  
TAP Electrical Characteristics  
Over the Operating Range  
Parameter  
Description  
Output HIGH Voltage  
Test Conditions  
= 2.0 mA  
Min  
1.4  
1.6  
Max  
Unit  
V
V
V
V
V
V
I
I
I
I
I
V
V
OH1  
OH2  
OL1  
OL2  
IH  
OH  
OH  
OL  
OL  
Output HIGH Voltage  
Output LOW Voltage  
Output LOW Voltage  
Input HIGH Voltage  
= 100 μA  
= 2.0 mA  
0.4  
0.2  
V
= 100 μA  
V
0.65V  
V
+ 0.3  
V
DD  
DD  
Input LOW Voltage  
–0.3  
–5  
0.35V  
5
V
IL  
DD  
Input and Output Load Current  
GND V V  
DD  
μA  
X
I
Notes  
11. These characteristics apply to the TAP inputs (TMS, TCK, TDI, and TDO). Parallel load levels are specified in Electrical Characteristics on page 20.  
12. Test conditions are specified using the load in TAP AC Test Conditions. t /t = 1 ns.  
R
F
13. All voltage refers to ground.  
Document Number: 001-06551 Rev. *E  
Page 15 of 28  
       
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
TAP AC Switching Characteristics  
Over the Operating Range  
Parameter  
Description  
Min  
Max  
Unit  
ns  
t
t
t
t
TCK Clock Cycle Time  
TCK Clock Frequency  
TCK Clock HIGH  
50  
TCYC  
TF  
20  
MHz  
ns  
20  
20  
TH  
TCK Clock LOW  
ns  
TL  
Setup Times  
t
t
t
TMS Setup to TCK Clock Rise  
TDI Setup to TCK Clock Rise  
Capture Setup to TCK Rise  
5
5
5
ns  
ns  
ns  
TMSS  
TDIS  
CS  
Hold Times  
t
t
t
TMS Hold after TCK Clock Rise  
TDI Hold after Clock Rise  
5
5
5
ns  
ns  
ns  
TMSH  
TDIH  
CH  
Capture Hold after Clock Rise  
Output Times  
t
t
TCK Clock LOW to TDO Valid  
TCK Clock LOW to TDO Invalid  
10  
ns  
ns  
TDOV  
TDOX  
0
TAP Timing and Test Conditions  
Figure 2. TAP Timing and Test Conditions  
0.9V  
ALL INPUT PULSES  
0.9V  
1.8V  
50Ω  
TDO  
0V  
Z = 50  
Ω
0
C = 20 pF  
L
tTL  
tTH  
GND  
(a)  
Test Clock  
TCK  
tTCYC  
tTMSH  
tTMSS  
Test Mode Select  
TMS  
tTDIS  
tTDIH  
Test Data In  
TDI  
Test Data Out  
TDO  
tTDOV  
tTDOX  
Note  
14. t and t refer to the setup and hold time requirements of latching data from the boundary scan register.  
CS  
CH  
Document Number: 001-06551 Rev. *E  
Page 16 of 28  
 
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Identification Register Definitions  
Value  
Instruction Field  
Description  
CY7C1566V18  
CY7C1577V18  
000  
CY7C1568V18  
000  
CY7C1570V18  
Revision Number  
(31:29)  
000  
000  
Version number.  
Cypress Device ID 11010111000000100 11010111000001100 11010111000010100 11010111000100100 Defines the type of  
(28:12)  
SRAM.  
Cypress JEDEC ID  
(11:1)  
00000110100  
1
00000110100  
1
00000110100  
1
00000110100  
1
Allows unique  
identification of  
SRAM vendor.  
ID Register  
Presence (0)  
Indicates the  
presence of an ID  
register.  
Scan Register Sizes  
Register Name  
Bit Size  
Instruction  
Bypass  
3
1
ID  
32  
109  
Boundary Scan  
Instruction Codes  
Instruction  
EXTEST  
Code  
000  
Description  
Captures the input and output ring contents.  
IDCODE  
001  
Loads the ID register with the vendor ID code and places the register between TDI and TDO.  
This operation does not affect SRAM operation.  
SAMPLE Z  
010  
Captures the input and output contents. Places the boundary scan register between TDI and  
TDO. Forces all SRAM output drivers to a High-Z state.  
RESERVED  
011  
100  
Do Not Use: This instruction is reserved for future use.  
SAMPLE/PRELOAD  
Captures the input and output ring contents. Places the boundary scan register between TDI  
and TDO. Does not affect the SRAM operation.  
RESERVED  
RESERVED  
BYPASS  
101  
110  
111  
Do Not Use: This instruction is reserved for future use.  
Do Not Use: This instruction is reserved for future use.  
Places the bypass register between TDI and TDO. This operation does not affect SRAM  
operation.  
Document Number: 001-06551 Rev. *E  
Page 17 of 28  
   
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Boundary Scan Order  
Bit Number  
Bump ID  
6R  
Bit Number  
28  
Bump ID  
10G  
9G  
Bit Number  
56  
Bump ID  
6A  
5B  
5A  
4A  
5C  
4B  
3A  
2A  
1A  
2B  
3B  
1C  
1B  
3D  
3C  
1D  
2C  
3E  
2D  
2E  
1E  
2F  
Bit Number  
84  
Bump ID  
1J  
0
1
6P  
29  
57  
85  
2J  
2
6N  
30  
11F  
11G  
9F  
58  
86  
3K  
3
7P  
31  
59  
87  
3J  
4
7N  
32  
60  
88  
2K  
5
7R  
33  
10F  
11E  
10E  
10D  
9E  
61  
89  
1K  
6
8R  
34  
62  
90  
2L  
7
8P  
35  
63  
91  
3L  
8
9R  
36  
64  
92  
1M  
1L  
9
11P  
10P  
10N  
9P  
37  
65  
93  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
38  
10C  
11D  
9C  
66  
94  
3N  
39  
67  
95  
3M  
1N  
40  
68  
96  
10M  
11N  
9M  
41  
9D  
69  
97  
2M  
3P  
42  
11B  
11C  
9B  
70  
98  
43  
71  
99  
2N  
9N  
44  
72  
100  
101  
102  
103  
104  
105  
106  
107  
108  
2P  
11L  
11M  
9L  
45  
10B  
11A  
10A  
9A  
73  
1P  
46  
74  
3R  
47  
75  
4R  
10L  
11K  
10K  
9J  
48  
76  
4P  
49  
8B  
77  
5P  
50  
7C  
78  
3F  
5N  
51  
6C  
79  
1G  
1F  
5R  
9K  
52  
8A  
80  
Internal  
10J  
11J  
11H  
53  
7A  
81  
3G  
2G  
1H  
54  
7B  
82  
55  
6B  
83  
Document Number: 001-06551 Rev. *E  
Page 18 of 28  
 
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
DLL Constraints  
Power Up Sequence in DDR-II+ SRAM  
DLL uses K clock as its synchronizing input. The input must  
have low phase jitter, which is specified as t  
DDR-II+ SRAMs must be powered up and initialized in a  
predefined manner to prevent undefined operations. During  
power up, when the DOFF is tied HIGH, the DLL is locked after  
2048 cycles of stable clock.  
.
KC Var  
The DLL functions at frequencies down to 120 MHz.  
If the input clock is unstable and the DLL is enabled, then the  
DLL may lock on to an incorrect frequency, causing unstable  
SRAM behavior. To avoid this, provide 2048 cycles stable clock  
to relock to the desired clock frequency.  
Power Up Sequence  
Apply power with DOFF tied HIGH (All other inputs can be  
HIGH or LOW)  
Apply V before V  
DD  
DDQ  
Apply V  
before V  
or at the same time as V  
DDQ  
REF REF  
Provide stable power and clock (K, K) for 2048 cycles to lock  
the DLL.  
Power Up Waveforms  
Figure 3. Power Up Waveforms  
K
K
Start Normal  
Operation  
Unstable Clock  
> 2048 Stable Clock  
Clock Start (Clock Starts after V /V  
DD DDQ  
is Stable)  
V
/V  
+
V
/V Stable (< 0.1V DC per 50 ns)  
DD DDQ  
DD DDQ  
Fix HIGH (tie to V  
DDQ  
)
DOFF  
Document Number: 001-06551 Rev. *E  
Page 19 of 28  
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Current into Outputs (LOW) ........................................ 20 mA  
Static Discharge Voltage (MIL-STD-883, M. 3015)... >2001V  
Latch up Current..................................................... >200 mA  
Maximum Ratings  
Exceeding maximum ratings may impair the useful life of the  
device. These user guidelines are not tested.  
Storage Temperature ................................. –65°C to +150°C  
Ambient Temperature with Power Applied.. –55°C to +125°C  
Operating Range  
Ambient  
Range  
V
V
DDQ  
DD  
Temperature (T )  
Supply Voltage on V Relative to GND........–0.5V to +2.9V  
A
DD  
Commercial  
Industrial  
0°C to +70°C  
1.8 ± 0.1V  
1.4V to  
Supply Voltage on V  
Relative to GND.......–0.5V to +V  
DD  
DDQ  
V
DD  
–40°C to +85°C  
DC Applied to Outputs in High-Z ........ –0.5V to V  
+ 0.3V  
DDQ  
DC Input Voltage  
.............................. –0.5V to V + 0.3V  
DD  
Electrical Characteristics  
Over the Operating Range  
DC Electrical Characteristics  
Parameter  
Description  
Power Supply Voltage  
IO Supply Voltage  
Test Conditions  
Min  
1.7  
1.4  
Typ  
Max  
Unit  
V
1.8  
1.5  
1.9  
V
V
DD  
V
V
V
V
V
V
V
I
V
DD  
DDQ  
OH  
Output HIGH Voltage  
Output LOW Voltage  
Output HIGH Voltage  
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage  
V
V
/2 – 0.12  
/2 – 0.12  
V
V
/2 + 0.12  
/2 + 0.12  
V
DDQ  
DDQ  
DDQ  
DDQ  
V
OL  
I
I
= –0.1 mA, Nominal Impedance  
= 0.1 mA, Nominal Impedance  
V
– 0.2  
V
V
OH(LOW)  
OL(LOW)  
IH  
OH  
OL  
DDQ  
DDQ  
V
0.2  
V
SS  
V
+ 0.1  
V
+ 0.15  
DDQ  
V
REF  
–0.15  
V
– 0.1  
REF  
V
IL  
Input Leakage Current  
Output Leakage Current  
Input Reference Voltage  
GND V V  
–2  
–2  
2
μA  
μA  
V
X
I
DDQ  
I
GND V V  
Output Disabled  
2
OZ  
I
DDQ,  
V
Typical Value = 0.75V  
0.68  
0.75  
0.95  
1400  
1400  
1400  
1400  
1300  
1300  
1300  
1300  
1200  
1200  
1200  
1200  
1100  
1100  
1100  
1100  
REF  
I
V
Operating Supply  
V
= Max,  
400MHz  
375MHz  
333MHz  
300MHz  
(x8)  
(x9)  
mA  
DD  
DD  
DD  
I
= 0 mA,  
OUT  
f = f  
= 1/t  
MAX  
CYC  
(x18)  
(x36)  
(x8)  
mA  
mA  
mA  
(x9)  
(x18)  
(x36)  
(x8)  
(x9)  
(x18)  
(x36)  
(x8)  
(x9)  
(x18)  
(x36)  
Notes  
15. Overshoot: V (AC) < V  
16. Power up: assumes a linear ramp from 0V to V (min) within 200 ms. During this time V < V and V  
+ 0.3V (pulse width less than t  
/2). Undershoot: V (AC) > 0.3V (pulse width less than t  
/2).  
IH  
DDQ  
CYC  
IL  
CYC  
< V  
.
DD  
IH  
DD  
DDQ  
DD  
17. Outputs are impedance controlled. I = –(V  
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.  
OH  
DDQ  
18. Outputs are impedance controlled. I = (V  
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.  
OL  
DDQ  
19. V  
(min) = 0.68V or 0.46V  
, whichever is larger. V  
(max) = 0.95V or 0.54V  
, whichever is smaller.  
DDQ  
REF  
DDQ  
REF  
20. The operation current is calculated with 50% read cycle and 50% write cycle.  
Document Number: 001-06551 Rev. *E  
Page 20 of 28  
             
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Electrical Characteristics  
[13]  
Over the Operating Range  
DC Electrical Characteristics  
Parameter  
Description  
Test Conditions  
Min  
Typ  
Max  
550  
550  
550  
550  
525  
525  
525  
525  
500  
500  
500  
500  
450  
450  
450  
450  
Unit  
I
Automatic Power down  
Current  
Max V  
,
400MHz  
375MHz  
333MHz  
300MHz  
(x8)  
(x9)  
mA  
SB1  
DD  
Both Ports Deselected,  
V
V or V V  
IN  
IH  
IN  
IL  
(x18)  
(x36)  
(x8)  
f = f  
= 1/t  
,
MAX  
CYC  
Inputs Static  
mA  
mA  
mA  
(x9)  
(x18)  
(x36)  
(x8)  
(x9)  
(x18)  
(x36)  
(x8)  
(x9)  
(x18)  
(x36)  
AC Electrical Characteristics  
Over the Operating Range  
Parameter  
Description  
Input HIGH Voltage  
Input LOW Voltage  
Test Conditions  
Min  
+ 0.2  
Typ  
Max  
Unit  
V
V
V
V
+ 0.24  
DDQ  
IH  
IL  
REF  
V
–0.24  
V
– 0.2  
V
REF  
Capacitance  
Tested initially and after any design or process change that may affect these parameters.  
Parameter  
Description  
Input Capacitance  
Test Conditions  
Max  
Unit  
C
T = 25°C, f = 1 MHz, V = 1.8V, V = 1.5V  
DDQ  
5.5  
8.5  
8
pF  
pF  
pF  
IN  
A
DD  
C
C
Clock Input Capacitance  
Output Capacitance  
CLK  
O
Thermal Resistance  
Tested initially and after any design or process change that may affect these parameters.  
165 FBGA  
Package  
Parameter  
Description  
Test Conditions  
Unit  
Θ
Thermal Resistance  
(Junction to Ambient)  
Test conditions follow standard test methods and  
procedures for measuring thermal impedance, in  
accordance with EIA/JESD51.  
11.82  
°C/W  
°C/W  
JA  
Θ
Thermal Resistance  
(Junction to Case)  
2.33  
JC  
Document Number: 001-06551 Rev. *E  
Page 21 of 28  
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
AC Test Loads and Waveforms  
Figure 4. AC Test Loads and Waveforms  
V
REF = 0.75V  
0.75V  
VREF  
VREF  
0.75V  
R = 50Ω  
OUTPUT  
ALL INPUT PULSES  
Z = 50Ω  
0
OUTPUT  
1.25V  
0.75V  
Device  
R = 50Ω  
L
Under  
Device  
Under  
0.25V  
Test  
5 pF  
VREF = 0.75V  
Slew Rate = 2 V/ns  
ZQ  
Test  
ZQ  
RQ =  
RQ =  
250Ω  
250Ω  
INCLUDING  
JIG AND  
SCOPE  
(a)  
(b)  
Note  
21. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, V  
= 0.75V, RQ = 250Ω, V  
= 1.5V, input pulse  
DDQ  
REF  
levels of 0.25V to 1.25V, output loading of the specified I /I , and load capacitance shown in (a) of AC Test Loads and Waveforms.  
OL OH  
Document Number: 001-06551 Rev. *E  
Page 22 of 28  
   
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Switching Characteristics  
Over the Operating Range  
400 MHz  
375 MHz  
333 MHz  
300 MHz  
Cypress Consortium  
Parameter Parameter  
Description  
(Typical) to the First Access  
DD  
Unit  
Min Max Min Max Min Max Min Max  
t
t
t
t
t
V
1
1
1
1
ms  
POWER  
CYC  
KH  
t
t
t
t
K Clock Cycle Time  
2.50 8.40 2.66 8.40 3.0 8.40 3.3 8.40 ns  
KHKH  
KHKL  
KLKH  
KHKH  
Input Clock (K/K) HIGH  
Input Clock (K/K) LOW  
0.4  
0.4  
0.4  
0.4  
0.4  
0.4  
0.4  
0.4  
t
t
CYC  
KL  
CYC  
K Clock Rise to K Clock Rise  
(rising edge to rising edge)  
1.06  
1.13  
1.28  
1.40  
ns  
KHKH  
Setup Times  
t
t
t
t
t
t
Address Setup to K Clock Rise  
0.4  
0.4  
0.4  
0.4  
0.4  
0.4  
0.4  
0.4  
ns  
ns  
ns  
SA  
AVKH  
IVKH  
IVKH  
Control Setup to K Clock Rise (LD, R/W)  
SC  
Double Data Rate Control Setup to Clock (K/K) 0.28  
Rise (BWS , BWS , BWS , BWS )  
0.28  
0.28  
0.28  
SCDDR  
0
1
2
3
t
t
D Setup to Clock (K/K) Rise  
[X:0]  
0.28  
0.28  
0.28  
0.28  
ns  
SD  
DVKH  
Hold Times  
t
t
t
t
t
t
0.4  
0.4  
0.4  
0.4  
0.4  
0.4  
0.4  
0.4  
ns  
ns  
ns  
Address Hold after K Clock Rise  
Control Hold after K Clock Rise (LD, R/W)  
HA  
KHAX  
KHIX  
KHIX  
HC  
Double Data Rate Control Hold after Clock (K/K) 0.28  
Rise (BWS , BWS , BWS , BWS )  
0.28  
0.28  
0.28  
HCDDR  
0
1
2
3
t
t
D Hold after Clock (K/K) Rise  
[X:0]  
0.28  
0.28  
0.28  
0.28  
ns  
HD  
KHDX  
Output Times  
t
t
t
t
K/K Clock Rise to Data Valid  
0.45  
0.45  
0.45  
0.45 ns  
ns  
CO  
CHQV  
CHQX  
Data Output Hold after K/K Clock Rise  
(Active to Active)  
–0.45  
–0.45  
–0.45  
–0.45  
DOH  
t
t
t
t
t
t
t
t
t
t
t
t
K/K Clock Rise to Echo Clock Valid  
Echo Clock Hold after K/K Clock Rise  
Echo Clock High to Data Valid  
0.45  
0.45  
0.45  
0.45 ns  
CCQO  
CQOH  
CQD  
CHCQV  
CHCQX  
CQHQV  
CQHQX  
CQHCQL  
CQHCQH  
–0.45  
–0.45  
–0.45  
–0.45  
0.2  
ns  
ns  
ns  
ns  
ns  
0.2  
0.2  
0.2  
Echo Clock High to Data Invalid  
–0.2  
0.81  
0.81  
–0.2  
0.88  
0.88  
–0.2  
1.03  
1.03  
–0.2  
1.15  
1.15  
CQDOH  
CQH  
Output Clock (CQ/CQ) HIGH  
CQ Clock Rise to CQ Clock Rise  
CQHCQH  
(rising edge to rising edge)  
t
t
t
t
t
t
Clock (K/K) Rise to High-Z (Active to High Z)  
0.45  
0.45  
0.45  
0.45 ns  
ns  
CHZ  
CLZ  
CHQZ  
CHQX1  
QVLD  
Clock (K/K) Rise to Low-Z  
–0.45  
–0.45  
–0.45  
–0.45  
Echo Clock High to QVLD Valid  
–0.20 0.20 –0.20 0.20 –0.20 0.20 –0.20 0.20 ns  
QVLD  
DLL Timing  
t
t
t
t
t
t
Clock Phase Jitter  
DLL Lock Time (K)  
0.20  
0.20  
0.20  
0.20 ns  
KC Var  
KC Var  
2048  
30  
2048  
30  
2048  
30  
2048  
30  
Cycles  
ns  
KC lock  
KC Reset  
KC lock  
KC Reset  
K Static to DLL Reset  
Notes  
22. When a part with a maximum frequency above 300 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is operated  
and outputs data with the output timings of that frequency range.  
23. This part has a voltage regulator internally; t  
is the time that the power is supplied above V minimum initially before a read or write operation is initiated.  
DD  
POWER  
24. These parameters are extrapolated from the input timing parameters (t  
- 250 ps, where 250 ps is the internal jitter. An input jitter of 200 ps (t  
) is already  
KHKH  
KC Var  
included in the t  
). These parameters are only guaranteed by design and are not tested in production  
KHKH  
25. t  
, t  
, are specified with a load capacitance of 5 pF as in (b) of “AC Test Loads and Waveforms” on page 22. Transition is measured ±100 mV from steady state  
CHZ CLZ  
voltage.  
26. At any given voltage and temperature, t  
is less than t  
and t  
less than t  
.
CO  
CHZ  
CLZ  
CHZ  
27. t  
specification is applicable for both rising and falling edges of QVLD signal.  
QVLD  
28. Hold to >V or <V .  
IH  
IL  
Document Number: 001-06551 Rev. *E  
Page 23 of 28  
               
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Switching Waveforms  
Read/Write/Deselect Sequence [29, 30, 31]  
Figure 5. Waveform for 2.5 Cycle Read Latency  
NOP  
1
READ  
2
READ  
3
NOP  
5
NOP  
6
WRITE  
7
WRITE  
8
NOP  
11  
NOP  
4
READ  
9
NOP  
10  
12  
K
t
t
t
t
KH  
KL  
KHKH  
CYC  
K
LD  
t
t
HC  
SC  
R/W  
A
A2  
A3  
A0  
A4  
A1  
t
QVLD  
t
t
t
t
SA HA  
QVLD  
QVLD  
QVLD  
t
t
HD  
HD  
SD  
t
t
SD  
D21 D30 D31  
Q00 Q01 Q10 Q11  
D20  
Q40  
DQ  
t
t
DOH  
t
CHZ  
CLZ  
t
t
t
CO  
CQD  
(Read Latency = 2.5 Cycles)  
t
CQDOH  
CCQO  
CQOH  
t
CQ  
CQ  
t
CQH  
t
CQHCQH  
t
CCQO  
t
CQOH  
DON’T CARE  
UNDEFINED  
Notes  
29. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.  
30. Outputs are disabled (High Z) one clock cycle after a NOP.  
31. In this example, if address A4 = A3, then data Q40 = D30 and Q41 = D31. Write data is forwarded immediately as read results. This note applies to the whole diagram.  
Document Number: 001-06551 Rev. *E  
Page 24 of 28  
     
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Ordering Information  
Not all of the speed, package, and temperature ranges are available. Contact your local sales representative or  
visit www.cypress.com for actual products offered.  
Speed  
(MHz)  
Package  
Diagram  
Operating  
Range  
Package Type  
Ordering Code  
400 CY7C1566V18-400BZC  
CY7C1577V18-400BZC  
CY7C1568V18-400BZC  
CY7C1570V18-400BZC  
CY7C1566V18-400BZXC  
CY7C1577V18-400BZXC  
CY7C1568V18-400BZXC  
CY7C1570V18-400BZXC  
CY7C1566V18-400BZI  
CY7C1577V18-400BZI  
CY7C1568V18-400BZI  
CY7C1570V18-400BZI  
CY7C1566V18-400BZXI  
CY7C1577V18-400BZXI  
CY7C1568V18-400BZXI  
CY7C1570V18-400BZXI  
375 CY7C1566V18-375BZC  
CY7C1577V18-375BZC  
CY7C1568V18-375BZC  
CY7C1570V18-375BZC  
CY7C1566V18-375BZXC  
CY7C1577V18-375BZXC  
CY7C1568V18-375BZXC  
CY7C1570V18-375BZXC  
CY7C1566V18-375BZI  
CY7C1577V18-375BZI  
CY7C1568V18-375BZI  
CY7C1570V18-375BZI  
CY7C1566V18-375BZXI  
CY7C1577V18-375BZXI  
CY7C1568V18-375BZXI  
CY7C1570V18-375BZXI  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free  
Commercial  
Industrial  
Commercial  
Industrial  
Document Number: 001-06551 Rev. *E  
Page 25 of 28  
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Ordering Information (continued)  
Not all of the speed, package, and temperature ranges are available. Contact your local sales representative or  
visit www.cypress.com for actual products offered.  
Speed  
(MHz)  
Package  
Diagram  
Operating  
Range  
Package Type  
Ordering Code  
333 CY7C1566V18-333BZC  
CY7C1577V18-333BZC  
CY7C1568V18-333BZC  
CY7C1570V18-333BZC  
CY7C1566V18-333BZXC  
CY7C1577V18-333BZXC  
CY7C1568V18-333BZXC  
CY7C1570V18-333BZXC  
CY7C1566V18-333BZI  
CY7C1577V18-333BZI  
CY7C1568V18-333BZI  
CY7C1570V18-333BZI  
CY7C1566V18-333BZXI  
CY7C1577V18-333BZXI  
CY7C1568V18-333BZXI  
CY7C1570V18-333BZXI  
300 CY7C1566V18-300BZC  
CY7C1577V18-300BZC  
CY7C1568V18-300BZC  
CY7C1570V18-300BZC  
CY7C1566V18-300BZXC  
CY7C1577V18-300BZXC  
CY7C1568V18-300BZXC  
CY7C1570V18-300BZXC  
CY7C1566V18-300BZI  
CY7C1577V18-300BZI  
CY7C1568V18-300BZI  
CY7C1570V18-300BZI  
CY7C1566V18-300BZXI  
CY7C1577V18-300BZXI  
CY7C1568V18-300BZXI  
CY7C1570V18-300BZXI  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)  
51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free  
Commercial  
Industrial  
Commercial  
Industrial  
Document Number: 001-06551 Rev. *E  
Page 26 of 28  
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Package Diagram  
Figure 6. 165-Ball FBGA (15 x 17 x 1.4 mm)  
"/44/- 6)%7  
4/0 6)%7  
0). ꢀ #/2.%2  
Œꢃꢂꢃꢄ - #  
Œꢃꢂꢇꢄ - # ! "  
ꢌꢃꢂꢀꢈ  
0). ꢀ #/2.%2  
Œꢃꢂꢄꢃ  
ꢅꢀꢆꢄ8  
ꢍꢃꢂꢃꢆ  
ꢀꢃ  
ꢀꢀ  
ꢀꢀ ꢀꢃ  
!
"
!
"
#
$
#
$
%
%
&
&
'
'
(
*
(
*
+
+
,
,
-
-
.
0
2
.
0
2
!
ꢀꢂꢃꢃ  
ꢄꢂꢃꢃ  
ꢀꢃꢂꢃꢃ  
"
ꢀꢄꢂꢃꢃ¼ꢃꢂꢀꢃ  
ꢃꢂꢀꢄꢅꢈ8  
./4%3 ꢎ  
3/,$%2 0!$ 490% ./. 3/,$%2 -!3+ $%&).%$ ꢅ.3-$  
0!#+!'% 7%)'(4 ꢂꢆꢄG  
*%$%# 2%&%2%.#% -/ꢍꢇꢀꢆ ꢏ $%3)'. ꢈꢂꢆ#  
0!#+!'% #/$% ""ꢃ!$  
3%!4).' 0,!.%  
#
51-85195-*A  
Document Number: 001-06551 Rev. *E  
Page 27 of 28  
CY7C1566V18, CY7C1577V18  
CY7C1568V18, CY7C1570V18  
Document History Page  
Document Title: CY7C1566V18/CY7C1577V18/CY7C1568V18/CY7C1570V18, 72-Mbit DDR-II+ SRAM 2-Word Burst Architec-  
ture (2.5 Cycle Read Latency)  
Document Number: 001-06551  
Issue  
Date  
Orig. of  
Change  
REV. ECN No.  
Description of Change  
**  
432718 See ECN  
437000 See ECN  
461934 See ECN  
NXR  
IGS  
New datasheet  
*A  
*B  
ECN to show on web  
NXR  
Changed t and t from 40 ns to 20 ns, changed t  
, t  
, t , t  
, t  
, t  
TH  
TL  
TMSS TDIS CS TMSH TDIH CH  
from 10 ns to 5 ns, and changed t  
from 20 ns to 10 ns in TAP AC Switching  
TDOV  
Characteristics table  
Modified power up waveform  
*C  
497567 See ECN  
NXR  
Changed the V  
Range table, and the DC Electrical Characteristics table  
Added foot note in page 1  
operating voltage to 1.4V to V in the Features section, Operating  
DDQ DD  
Changed the Maximum rating of ambient temperature with power applied from –10°C  
to +85°C to –55°C to +125°C  
Changed V  
(Max) specification from 0.85V to 0.95V in the DC Electrical Character-  
REF  
istics table and in the note below the table  
Updated footnote 18 to specify overshoot and undershoot specification  
Updated I and I values  
DD  
SB  
Updated Θ and Θ values  
JA  
JC  
Removed x9 part and its related information  
Updated footnote 25  
*D  
*E  
1351504 See ECN VKN/AESA Converted from preliminary to final  
Added x8 and x9 parts  
Updated logic block diagram for x18 and x36 parts  
Changed t max spec to 8.4 ns for all speed bins  
CYC  
Updated footnote# 21  
Updated Ordering Information table  
2193266 See ECN VKN/AESA Added footnote# 20 related to I  
DD  
© Cypress Semiconductor Corporation, 2006-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use  
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used  
for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use  
as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support  
systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.  
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),  
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,  
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress  
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without  
the express written permission of Cypress.  
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES  
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not  
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where  
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer  
assumes all risk of such use and in doing so indemnifies Cypress against all charges.  
Use may be limited by and subject to the applicable Cypress software license agreement.  
Document Number: 001-06551 Rev. *E  
Revised March 11, 2008  
Page 28 of 28  
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this document  
are the trademarks of their respective holders.  

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