CY7C1302DV25
9-Mbit Burst of Two Pipelined SRAMs
with QDR™ Architecture
Functional Description
Features
• Separate independent Read and Write data ports
— Supports concurrent transactions
• 167-MHz clock for high bandwidth
— 2.5 ns Clock-to-Valid access time
• 2-word burst on all accesses
The CY7C1302DV25 is a 2.5V Synchronous Pipelined SRAM
equipped with QDR™ architecture. QDR architecture consists
of two separate ports to access the memory array. The Read
port has dedicated data outputs to support Read operations
and the Write Port has dedicated data inputs to support Write
operations. Access to each port is accomplished through a
common address bus. The Read address is latched on the
rising edge of the K clock and the Write address is latched on
the rising edge of K clock. QDR has separate data inputs and
data outputs to completely eliminate the need to “turn-around”
the data bus required with common I/O devices. Accesses to
the CY7C1302DV25 Read and Write ports are completely
independent of one another. All accesses are initiated
synchronously on the rising edge of the positive input clock
(K). In order to maximize data throughput, both Read and
Write ports are equipped with DDR interfaces. Therefore, data
can be transferred into the device on every rising edge of both
input clocks (K and K) and out of the device on every rising
edge of the output clock (C and C, or K and K in a single clock
domain) thereby maximizing performance while simplifying
system design. Each address location is associated with two
18-bit words that burst sequentially into or out of the device.
• Double Data Rate (DDR) interfaces on both Read and
Write ports (data transferred at 333 MHz) @ 167 MHz
• Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
• Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches.
• Single multiplexed address input bus latches address
inputs for both Read and Write ports
• Separate Port Selects for depth expansion
• Synchronous internally self-timed writes
• 2.5V core power supply with HSTL Inputs and Outputs
• Available in 165-ball FBGA package (13 x 15 x 1.4 mm)
• Variable drive HSTL output buffers
Depth expansion is accomplished with a Port Select input for
each port. Each Port Select allows each port to operate
independently.
• Expanded HSTL output voltage (1.4V–1.9V)
• JTAG Interface
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Configurations
CY7C1302DV25 – 512K x 18
Logic Block Diagram (CY7C1302DV25)
D[17:0]
18
Write
Write
Data Reg
Data Reg
Address
Register
A(17:0)
Address
Register
A(17:0)
18
18
256Kx18 256Kx18
Memory Memory
Array
Array
K
CLK
Gen.
RPS
Control
Logic
K
C
C
Read Data Reg.
36
18
Vref
18
Reg.
Reg.
Reg.
18
18
Control
Logic
WPS
BWS0
18
Q[17:0]
BWS1
Cypress Semiconductor Corporation
Document #: 38-05625 Rev. *A
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised March 23, 2006
CY7C1302DV25
Pin Definitions (continued)
Name
I/O
Description
C
C
K
Input-
Clock
Positive Input Clock for Output Data. C is used in conjunction with C to clock out the Read data
from the device. C and C can be used together to deskew the flight times of various devices on
the board back to the controller. See application example for further details.
Input-Clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the Read data
from the device. C and C can be used together to deskew the flight times of various devices on
the board cack to the controller. See application example for further details.
Input-Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the
device and to drive out data through Q
when in single clock mode. All accesses are initiated
[17:0]
on the rising edge of K.
K
Input-Clock Negative Input Clock Input. K is used to capture synchronous inputs being presented to the
device and to drive out data through Q when in single clock mode.
[17:0]
ZQ
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system
data bus impedance. Q output impedance is set to 0.2 x RQ, where RQ is a resistor connected
[17:0]
between ZQ and ground. Alternately, this pin can be connected directly to V
, which enables
DDQ
the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
TDO
TCK
Output
Input
Input
Input
N/A
TDO for JTAG.
TCK pin for JTAG.
TDI pin for JTAG.
TMS pin for JTAG.
TDI
TMS
NC/18M
Address expansion for 18M. This is not connected to the die and so can be tied to any voltage
level.
NC/36M
N/A
Address expansion for 36M. This is not connected to the die and so can be tied to any voltage
level.
GND/72M
GND/144M
NC
Input
Input
N/A
Address expansion for 72M. This must be tied LOW.
Address expansion for 144M. This must be tied LOW.
Not connected to the die. Can be tied to any voltage level.
V
Input-
Reference
Reference Voltage Input. Static input used to set the reference level for HSTL inputs and Outputs
as well as AC measurement points.
REF
V
V
V
Power Supply Power supply inputs to the core of the device.
Ground Ground for the device.
Power Supply Power supply inputs for the outputs of the device.
DD
SS
DDQ
synchronous data outputs (Q
registers controlled by the rising edge of the output clocks (C
and C, or K and K when in single clock mode).
) pass through output
Introduction
[17:0]
Functional Overview
The CY7C1302DV25 is a synchronous pipelined Burst SRAM
equipped with both a Read port and a Write port. The Read
port is dedicated to Read operations and the Write port is
dedicated to Write operations. Data flows into the SRAM
through the Write port and out through the Read port. These
devices multiplex the address inputs in order to minimize the
number of address pins required. By having separate Read
and Write ports, the QDR-I completely eliminates the need to
“turn-around” the data bus and avoids any possible data
contention, thereby simplifying system design. 38-05625
All synchronous control (RPS, WPS, BWS
through input registers controlled by the rising edge of input
clocks (K and K).
) inputs pass
[1:0]
Read Operations
The CY7C1302DV25 is organized internally as 2 arrays of
256K x 18. Accesses are completed in a burst of two
sequential 18-bit data words. Read operations are initiated by
asserting RPS active at the rising edge of the positive input
clock (K). The address is latched on the rising edge of the K
clock. Following the next K clock rise the corresponding lower
order 18-bit word of data is driven onto the Q
the output timing reference. On the subsequent rising edge of
C the higher order data word is driven onto the Q . The
Accesses for both ports are initiated on the rising edge of the
Positive Input Clock (K). All synchronous input timing is refer-
enced from the rising edge of the input clocks (K and K) and
all output timing is referenced to the output clocks (C and C,
or K and K when in single clock mode).
using C as
[17:0]
[17:0]
requested data will be valid 2.5 ns from the rising edge of the
output clock (C and C, or K and K when in single clock mode,
167-MHz device).
All synchronous data inputs (D
) pass through input
[17:0]
registers controlled by the input clocks (K and K). All
Document #: 38-05625 Rev. *A
Page 3 of 18
CY7C1302DV25
Synchronous internal circuitry will automatically three-state
the outputs following the next rising edge of the positive output
clock (C). This will allow for a seamless transition between
devices without the insertion of wait states in a depth
expanded memory.
registers. This operation is identical to the operation if the
device had zero skew between the K/K and C/C clocks. All
timing parameters remain the same in this mode. To use this
mode of operation, the user must tie C and C HIGH at
power-up.This function is a strap option and not alterable
during device operation.
Write Operations
Concurrent Transactions
Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the same K clock
The Read and Write ports on the CY7C1302DV25 operate
completely independently of one another. Since each port
latches the address inputs on different clock edges, the user
can Read or Write to any location, regardless of the trans-
action on the other port. Also, reads and writes can be started
in the same clock cycle. If the ports access the same location
at the same time, the SRAM will deliver the most recent infor-
mation associated with the specified address location. This
includes forwarding data from a Write cycle that was initiated
on the previous K clock rise.
rise the data presented to D
Write Data register provided BWS
active. On the subsequent rising edge of the negative input
clock (K), the address is latched and the information presented
is latched into the lower 18-bit
[17:0]
are both asserted
[1:0]
to D
BWS
is stored into the Write Data register provided
are both asserted active. The 36 bits of data are then
[17:0]
[1:0]
written into the memory array at the specified location.
When deselected, the Write port will ignore all inputs after the
pending Write operations have been completed.
Depth Expansion
Byte Write Operations
The CY7C1302DV25 has a Port Select input for each port.
This allows for easy depth expansion. Both Port Selects are
sampled on the rising edge of the Positive Input Clock only (K).
Each port select input can deselect the specified port.
Deselecting a port will not affect the other port. All pending
transactions (Read and Write) will be completed prior to the
device being deselected.
Byte Write operations are supported by the CY7C1302DV25.
A Write operation is initiated as described in the Write
Operation section above. The bytes that are written are deter-
mined by BWS and BWS which are sampled with each set
0
1
of 18-bit data word. Asserting the appropriate Byte Write
Select input during the data portion of a write will allow the data
being presented to be latched and written into the device.
Deasserting the Byte Write Select input during the data portion
of a write will allow the data stored in the device for that byte
to remain unaltered. This feature can be used to simplify
Read/Modify/Write operations to a Byte Write operation.
38-05625
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ
pin on the SRAM and V to allow the SRAM to adjust its
SS
output driver impedance. The value of RQ must be 5X the
value of the intended line impedance driven by the SRAM, The
allowable range of RQ to guarantee impedance matching with
Single Clock Mode
a tolerance of ±15% is between 175Ω and 350Ω, with V
DDQ
The CY7C1302DV25 can be used with a single clock mode.
In this mode the device will recognize only the pair of input
clocks (K and K) that control both the input and output
=1.5V. The output impedance is adjusted every 1024 cycles to
account for drifts in supply voltage and temperature.
Application Example[1]
Note:
1. The above application shows 4 QDR-I being used.
Document #: 38-05625 Rev. *A
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CY7C1302DV25
Truth Table[2, 3, 4, 5, 6, 7]
Operation
K
RPS
WPS
DQ
DQ
Write Cycle:
L-H
X
L
D(A+0) at K(t) ↑
D(A+1) at K(t) ↑
Load address on the rising edge of K
clock; input write data on K and K rising
edges.
Read Cycle:
L-H
L
X
Q(A+0) at C(t+1)↑
Q(A+1) at C(t+1) ↑
Load address on the rising edge of K
clock; wait one cycle; read data on 2
consecutive C and C rising edges.
NOP: No Operation
L-H
H
X
H
X
D = X
Q = High-Z
D = X
Q = High-Z
Standby: Clock Stopped
Stopped
Previous State
Previous State
Write Cycle Descriptions[2,8]
BWS
BWS
K
L-H
–
K
Comments
During the Data portion of a Write sequence, both bytes (D
0
1
L
L
L
L
L
–
) are written into the device.
) are written into the device.
[17:0]
[17:0]
L-H During the Data portion of a Write sequence, both bytes (D
H
L-H
–
During the Data portion of a Write sequence, only the lower byte (D
) is written into the
[8:0]
device. D
remains unaltered.
[17:9]
L
H
L
L
–
L-H
–
L-H During the Data portion of a Write sequence, only the lower byte (D
device. D remains unaltered.
) is written into the
[8:0]
[17:9]
H
H
H
–
During the Data portion of a Write sequence, only the byte (D
) is written into the device.
[17:9]
D
remains unaltered.
[8:0]
L-H During the Data portion of a Write sequence, only the byte (D
remains unaltered.
) is written into the device.
[17:9]
D
[8:0]
H
H
L-H
–
–
No data is written into the device during this portion of a Write operation.
H
L-H No data is written into the device during this portion of a Write operation.
Notes:
2. X = Don't Care, H = Logic HIGH, L = Logic LOW, ↑ represents rising edge.
3. Device will power-up deselected and the outputs in a three-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A+0, A+1 represent the addresses sequence in the burst.
5. “t” represents the cycle at which a Read/Write operation is started. t+1 is the first clock cycle succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging
symmetrically. 38-05625
8. Assumes a Write cycle was initiated per the Write Port Cycle Description Truth Table. BWS , BWS can be altered on different portions of a Write cycle, as long
0
1
as the set-up and hold requirements are achieved. 38-05625
Document #: 38-05625 Rev. *A
Page 5 of 18
CY7C1302DV25
TDI and TDO pins as shown in TAP Controller Block Diagram.
Upon power-up, the instruction register is loaded with the
IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant
with IEEE Standard #1149.1-1900. The TAP operates using
JEDEC standard 2.5V I/O logic levels.
When the TAP controller is in the Capture IR state, the two
least significant bits are loaded with a binary “01” pattern to
allow for fault isolation of the board level serial test path.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
Bypass Register
(V ) to prevent clocking of the device. TDI and TMS are inter-
nally pulled up and may be unconnected. They may alternately
SS
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
be connected to V
through a pull-up resistor. TDO should
DD
be left unconnected. Upon power-up, the device will come up
in a reset state which will not interfere with the operation of the
device.
(V ) when the BYPASS instruction is executed.
SS
Test Access Port—Test Clock
Boundary Scan Register
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several no connect (NC) pins are
also included in the scan register to reserve pins for higher
density devices.
Test Mode Select
The boundary scan register is loaded with the contents of the
RAM Input and Output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and
TDO pins when the controller is moved to the Shift-DR state.
The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instruc-
tions can be used to capture the contents of the Input and
Output ring.
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to
leave this pin unconnected if the TAP is not used. The pin is
pulled up internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. For
information on loading the instruction register, see the TAP
Controller State Diagram. TDI is internally pulled up and can
be unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions table.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine (see Instruction codes). The
output changes on the falling edge of TCK. TDO is connected
to the least significant bit (LSB) of any register.
TAP Instruction Set
Performing a TAP Reset
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in the
Instruction Code table. Three of these instructions are listed
as RESERVED and should not be used. The other five instruc-
tions are described in detail below.
A Reset is performed by forcing TMS HIGH (V ) for five rising
DD
edges of TCK. This RESET does not affect the operation of
the SRAM and may be performed while the SRAM is
operating. At power-up, the TAP is reset internally to ensure
that TDO comes up in a high-Z state.
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO pins.
To execute the instruction once it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
TAP Registers
Registers are connected between the TDI and TDO pins and
allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction registers. Data is serially loaded into the TDI pin
on the rising edge of TCK. Data is output on the TDO pin on
the falling edge of TCK.
IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO pins and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state. The IDCODE instruction
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
Document #: 38-05625 Rev. *A
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CY7C1302DV25
is loaded into the instruction register upon power-up or
whenever the TAP controller is given a test logic reset state.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO pins. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO pins when the TAP
controller is in a Shift-DR state. The SAMPLE Z command puts
the output bus into a High-Z state until the next command is
given during the “Update IR” state.
EXTEST
The EXTEST instruction enables the preloaded data to be
driven out through the system output pins. This instruction also
selects the boundary scan register to be connected for serial
access between the TDI and TDO in the shift-DR controller
state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and output pins is
captured in the boundary scan register.
EXTEST Output Bus Three-state
The user must be aware that the TAP controller clock can only
operate at a frequency up to 10 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because
there is a large difference in the clock frequencies, it is
possible that during the Capture-DR state, an input or output
will undergo a transition. The TAP may then try to capture a
signal while in transition (metastable state). This will not harm
the device, but there is no guarantee as to the value that will
be captured. Repeatable results may not be possible.
IEEE Standard 1149.1 mandates that the TAP controller be
able to put the output bus into a three-state mode.
The boundary scan register has a special bit located at bit #47.
When this scan cell, called the “extest output bus three-state”,
is latched into the preload register during the “Update-DR”
state in the TAP controller, it will directly control the state of the
output (Q-bus) pins, when the EXTEST is entered as the
current instruction. When HIGH, it will enable the output
buffers to drive the output bus. When LOW, this bit will place
the output bus into a High-Z condition.
To guarantee that the boundary scan register will capture the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture set-up plus
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that
cell, during the “Shift-DR” state. During “Update-DR”, the value
loaded into that shift-register cell will latch into the preload
register. When the EXTEST instruction is entered, this bit will
directly control the output Q-bus pins. Note that this bit is
pre-set HIGH to enable the output when the device is
powered-up, and also when the TAP controller is in the
“Test-Logic-Reset” state.
hold times (t and t ). The SRAM clock input might not be
CS
CH
captured correctly if there is no way in a design to stop (or
slow) the clock during a SAMPLE/PRELOAD instruction. If this
is an issue, it is still possible to capture all other signals and
simply ignore the value of the CK and CK captured in the
boundary scan register.
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO pins.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
PRELOAD allows an initial data pattern to be placed at the
latched parallel outputs of the boundary scan register cells
prior to the selection of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases
can occur concurrently when required—that is, while data
captured is shifted out, the preloaded data can be shifted in.
Document #: 38-05625 Rev. *A
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CY7C1302DV25
TAP Controller State Diagram[9]
TEST-LOGIC
1
RESET
0
1
1
1
TEST-LOGIC/
IDLE
SELECT
DR-SCAN
SELECT
IR-SCAN
0
0
0
1
1
CAPTURE-DR
CAPTURE-DR
0
0
SHIFT-DR
0
SHIFT-IR
0
1
1
EXIT1-DR
0
1
EXIT1-IR
0
1
0
0
PAUSE-DR
1
PAUSE-IR
1
0
0
EXIT2-DR
1
EXIT2-IR
1
UPDATE-DR
UPDATE-IR
1
1
0
0
Note:
9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document #: 38-05625 Rev. *A
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CY7C1302DV25
TAP Controller Block Diagram
0
Bypass Register
Selection
TDI
Selection
Circuitry
2
1
0
0
0
TDO
Circuitry
Instruction Register
29
31 30
.
.
2
1
Identification Register
.
106 .
.
.
2
1
Boundary Scan Register
TCK
TMS
TAP Controller
[10, 13, 15]
TAP Electrical Characteristics Over the Operating Range
Parameter
Description
Output HIGH Voltage
Test Conditions
= −2.0 mA
= −100 µA
= 2.0 mA
Min.
1.7
Max.
Unit
V
V
V
V
V
V
V
I
I
I
I
I
OH1
OH2
OL1
OL2
IH
OH
OH
OL
OL
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
2.1
V
0.7
0.2
V
= 100 µA
V
1.7
–0.3
–5
V
+ 0.3
V
DD
Input LOW Voltage
0.7
5
V
IL
Input and Output Load Current
GND ≤ V ≤ V
µA
X
I
DDQ
[11, 12]
TAP AC Switching Characteristics Over the Operating Range
Parameter
Description
Min.
Max.
Unit
ns
t
t
t
t
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH
50
TCYC
20
MHz
ns
TF
TH
TL
20
20
TCK Clock LOW
ns
Set-up Times
t
t
t
TMS Set-up to TCK Clock Rise
TDI Set-up to TCK Clock Rise
Capture Set-up to TCK Rise
10
10
10
ns
ns
ns
TMSS
TDIS
CS
Hold Times
t
t
t
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
10
10
10
ns
ns
ns
TMSH
TDIH
CH
Capture Hold after Clock Rise
Notes:
10. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.
11. T and T refer to the set-up and hold time requirements of latching data from the boundary scan register.
CS
CH
12. Test conditions are specified using the load in TAP AC test conditions. Tr/Tf = 1 ns.
Document #: 38-05625 Rev. *A
Page 9 of 18
CY7C1302DV25
[11, 12]
TAP AC Switching Characteristics Over the Operating Range (continued)
Parameter
Description
Min.
Max.
Unit
Output Times
t
t
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
20
ns
ns
TDOV
TDOX
0
TAP Timing and Test Conditions[12]
1.25V
50Ω
ALL INPUT PULSES
1.25V
TDO
2.5V
Z = 50Ω
0
C = 20 pF
L
0V
(a)
GND
t
TL
t
TH
Test Clock
TCK
t
TCYC
t
TMSS
t
TMSH
Test Mode Select
TMS
t
TDIS
t
TDIH
Test Data-In
TDI
Test Data-Out
TDO
t
t
TDOX
TDOV
Identification Register Definitions
Value
CY7C1302DV25
000
Instruction Field
Revision Number (31:29)
Cypress Device ID (28:12)
Cypress JEDEC ID (11:1)
ID Register Presence (0)
Description
Version number.
Defines the type of SRAM.
01011010010010110
00000110100
1
Allows unique identification of SRAM vendor.
Indicate the presence of an ID register.
Document #: 38-05625 Rev. *A
Page 10 of 18
CY7C1302DV25
Scan Register Sizes
Register Name
Instruction
Bit Size
3
1
Bypass
ID
32
107
Boundary Scan
Instruction Codes
Instruction
EXTEST
Code
000
Description
Captures the Input/Output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the Input/Output contents. Places the boundary scan register between TDI and
TDO. Forces all SRAM output drivers to a High-Z state.
RESERVED
011
100
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
Captures the Input/Output ring contents. Places the boundary scan register between TDI
and TDO. Does not affect the SRAM operation.
RESERVED
RESERVED
BYPASS
101
110
111
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operation.
Document #: 38-05625 Rev. *A
Page 11 of 18
CY7C1302DV25
Boundary Scan Order
Bit #
0
Bump ID
6R
Bit #
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
Bump ID
11H
10G
9G
Bit #
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
Bump ID
7B
6B
6A
5B
5A
4A
5C
4B
3A
1H
1A
2B
3B
1C
1B
3D
3C
1D
2C
3E
2D
2E
1E
2F
Bit #
81
Bump ID
3G
2G
1J
1
6P
82
2
6N
83
3
7P
11F
11G
9F
84
2J
4
7N
85
3K
3J
5
7R
86
6
8R
10F
11E
10E
10D
9E
87
2K
1K
2L
7
8P
88
8
9R
89
9
11P
10P
10N
9P
90
3L
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
91
1M
1L
10C
11D
9C
92
93
3N
3M
1N
2M
3P
2N
2P
1P
3R
4R
4P
5P
5N
5R
10M
11N
9M
94
9D
95
11B
11C
9B
96
9N
97
11L
11M
9L
98
10B
11A
Internal
9A
99
100
101
102
103
104
105
106
10L
11K
10K
9J
8B
7C
9K
6C
3F
10J
11J
8A
1G
1F
7A
Document #: 38-05625 Rev. *A
Page 12 of 18
CY7C1302DV25
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Maximum Ratings
(Above which the useful life may be impaired.)
Latch-up Current..................................................... >200 mA
Storage Temperature .................................–65°C to + 150°C
Operating Range
Ambient Temperature with
Power Applied............................................–55°C to + 125°C
Ambient
[14]
[14]
Range Temperature (T )
V
V
DDQ
A
DD
Supply Voltage on V Relative to GND....... –0.5V to + 3.6V
DD
Com’l
Ind’l
0°C to +70°C
2.5 ± 0.1V
1.4V to 1.9V
Supply Voltage on V
Relative to GND .....–0.5V to + V
DD
DDQ
–40°C to +85°C
DC Applied to Outputs in High-Z......... –0.5V to V
+ 0.5V
DDQ
[13
DC Input Voltage ................................–0.5V to V + 0.5V
DD
Current into Outputs (LOW).........................................20 mA
Electrical Characteristics Over the Operating Range
DC Electrical Characteristics Over the Operating Range
[15]
Parameter
Description
Power Supply Voltage
I/O Supply Voltage
Test Conditions
Min.
2.4
Typ.
Max.
Unit
V
V
2.5
1.5
2.6
DD
V
V
V
V
V
V
V
I
1.4
1.9
V
DDQ
OH
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Note 16
Note 17
V
V
/2 – 0.12
/2 – 0.12
V
V
/2 + 0.12
/2 + 0.12
V
DDQ
DDQ
V
OL
DDQ
DDQ
I
I
= –0.1 mA, Nominal Impedance
= 0.1 mA, Nominal Impedance
V
V
– 0.2
V
V
OH(LOW)
OL(LOW)
IH
OH
OL
DDQ
DDQ
V
0.2
V
SS
[13]
Input HIGH Voltage
+ 0.1
V
+ 0.3
DDQ
V
REF
[13, 18]
Input LOW Voltage
–0.3
V
– 0.1
REF
V
IL
Input Load Current
GND ≤ V ≤ V
–5
–5
5
µA
µA
V
X
I
DDQ
I
Output Leakage Current
Input Reference Voltage
GND ≤ V ≤ V
Output Disabled
5
OZ
I
DDQ,
[19]
V
Typical value = 0.75V
0.68
0.75
0.95
500
REF
I
V
Operating Supply
V
= Max., I
= 0 mA,
mA
DD
DD
DD
OUT
= 1/t
CYC
f = f
MAX
I
Automatic
Power-Down
Current
Max. V , Both Ports Deselected,
240
mA
SB1
DD
V
≥ V or V ≤ V , f =f
IN
IH IN IL MAX
Inputs Static
=1/t
CYC,
AC Input Requirements Over the Operating Range
Parameter
Description
Input HIGH Voltage
Input LOW Voltage
Test Conditions
Min.
Typ.
Max.
Unit
V
V
V
+ 0.2
–
IH
REF
V
–
V
– 0.2
V
IL
REF
Notes:
13. Overshoot: V (AC) < V
+0.85V (Pulse width less than t
/2), Undershoot: V AC) > –1.5V (Pulse width less than t
/2).
IH
DDQ
CYC
IL(
CYC
14. Power-up: Assumes a linear ramp from 0V to V (min.) within 200 ms. During this time V < V and V
< V
.
DD
IH
DD
DDQ
DD
15. All voltage referenced to Ground.
16. Output are impedance controlled. I = –(V
/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ω.
OH
DDQ
17. Output are impedance controlled. I = (V
/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ω.
OL
DDQ
18. This spec is for all inputs except C and C Clock. For C and C Clock, V (Max.) = V
– 0.2V.
IL
REF
19. V
(Min.) = 0.68V or 0.46V
, whichever is larger, V
(Max.) = 0.95V or 0.54V
, whichever is smaller.
REF
DDQ
REF
DDQ
Document #: 38-05625 Rev. *A
Page 13 of 18
CY7C1302DV25
Thermal Resistance[20]
Parameter
Description
Test Conditions
165 FBGA Package Unit
Θ
Θ
Thermal Resistance (Junction to Ambient) Test conditions follow standard test
16.7
2.5
°C/W
JA
JC
methods and procedures for measuring
Thermal Resistance (Junction to Case)
°C/W
thermal impedance, per EIA/JESD51.
Capacitance[20]
Parameter
Description
Input Capacitance
Test Conditions
T = 25°C, f = 1 MHz,
Max.
Unit
pF
C
C
C
5
6
7
IN
A
V
= 2.5V.
= 1.5V
DD
Clock Input Capacitance
Output Capacitance
pF
CLK
O
V
DDQ
pF
AC Test Loads and Waveforms
V
REF = 0.75V
0.75V
VREF
VREF
0.75V
R = 50Ω
OUTPUT
[21]
ALL INPUT PULSES
1.25V
Z = 50Ω
0
OUTPUT
Device
R = 50Ω
L
0.75V
Under
Device
Under
0.25V
Test
5 pF
VREF = 0.75V
Slew Rate = 2 V/ns
ZQ
Test
ZQ
RQ =
RQ =
250Ω
250Ω
(a)
(b)
[21]
Switching Characteristics Over the Operating Range
167 MHz
Cypress
Parameter
Consortium
Parameter
Description
Min.
Max.
Unit
[22]
t
V
(typical) to the First Access Read or Write
10
µs
Power
CC
Cycle Time
t
t
t
t
t
t
t
t
K Clock and C Clock Cycle Time
Input Clock (K/K and C/C) HIGH
Input Clock (K/K and C/C) LOW
6.0
2.4
2.4
ns
ns
ns
ns
CYC
KH
KHKH
KHKL
KLKH
KHKH
KL
K/K Clock Rise to K/K Clock Rise and C/C to C/C Rise (rising edge
to rising edge)
2.7
3.3
2.0
KHKH
t
t
K/K Clock Rise to C/C Clock Rise (rising edge to rising edge)
0.0
ns
KHCH
KHCH
Set-up Times
t
t
t
t
t
t
Address Set-up to Clock (K and K) Rise
0.7
0.7
0.7
ns
ns
ns
SA
SC
SD
SA
SC
SD
Control Set-up to Clock (K and K) Rise (RPS, WPS, BWS , BWS )
0
1
D
Set-up to Clock (K and K) Rise
[17:0]
Hold Times
t
t
t
t
Address Hold after Clock (K and K) Rise
0.7
0.7
ns
ns
HA
HC
HA
Control Signals Hold after Clock (K and K) Rise
HC
(RPS, WPS, BWS , BWS )
0
1
t
t
D Hold after Clock (K and K) Rise
[17:0]
0.7
ns
HD
HD
Notes:
20. Tested initially and after any design or process change that may affect these parameters.
21. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V,Vref = 0.75V, RQ = 250W, V
= 1.5V, input
DDQ
pulse levels of 0.25V to 1.25V, and output loading of the specified I /I and load capacitance shown in (a) of AC test loads.
OL OH
22. This part has a voltage regulator that steps down the voltage internally; t
is the time power needs to be supplied above V minimum initially before a read
Power
DD
or write operation can be initiated.
Document #: 38-05625 Rev. *A
Page 14 of 18
CY7C1302DV25
[21]
Switching Characteristics Over the Operating Range (continued)
167 MHz
Cypress
Parameter
Consortium
Parameter
Description
Min.
Max.
Unit
Output Times
t
t
t
t
t
t
t
t
C/C Clock Rise (or K/K in single clock mode) to Data Valid
Data Output Hold after Output C/C Clock Rise (Active to Active)
2.5
ns
ns
ns
ns
CO
CHQV
CHQX
CHZ
1.2
1.2
DOH
CHZ
CLZ
[23, 24]
Clock (C and C) Rise to High-Z (Active to High-Z)
2.5
[23, 24]
Clock (C and C) Rise to Low-Z
CLZ
Notes:
23. t
, t
, are specified with a load capacitance of 5 pF as in (b) of AC Test Loads. Transition is measured ± 100 mV from steady-state voltage.
CHZ CLZ
24. At any given voltage and temperature t
is less than t
and, t
less than t
.
CHZ
CLZ
CHZ
CO
Document #: 38-05625 Rev. *A
Page 15 of 18
CY7C1302DV25
Switching Waveforms[25, 26, 27]
READ
1
WRITE
2
READ
3
WRITE
4
READ
5
WRITE
6
NOP
7
WRITE
8
NOP
9
10
K
t
t
t
t
KH
KL
CYC
KHKH
K
RPS
tSC
tHC
WPS
A
A5
A6
A0
A1
A2
A3
A4
t
t
t
t
SA HA
SA HA
D
Q
D10
D11
D30
D31
D50
D51
D60
D61
t
t
t
SD
HD
HD
t
SD
Q00
Q01
Q20
Q21
Q40
Q41
t
CHZ
t
t
t
DOH
DOH
CLZ
t
t
t
t
KHCH
KHCH
CO
CO
C
C
t
t
t
tCYC
KH
KL
KHKH
DON’T CARE
UNDEFINED
Notes:
25. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0 i.e., A0+1.
26. Outputs are disabled (High-Z) one clock cycle after a NOP.
27. In this example, if address A2=A1 then data Q20=D10 and Q21=D11. Write data is forwarded immediately as read results.This note applies to the whole diagram.
Document #: 38-05625 Rev. *A
Page 16 of 18
CY7C1302DV25
Ordering Information
“Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
Speed
(MHz)
Package
Diagram
Operating
Range
Ordering Code
Package Type
167 CY7C1302DV25-167BZC 51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
CY7C1302DV25-167BZXC
CY7C1302DV25-167BZI
CY7C1302DV25-167BZXI
165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead free
165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead free
Package Diagram
165-ball FBGA (13 x 15 x 1.4 mm) (51-85180)
BOTTOM VIEW
TOP VIEW
PIN 1 CORNER
Ø0.05 M C
PIN 1 CORNER
Ø0.25 M C A B
-0.06
Ø0.50
(165X)
+0.14
1
2
3
4
5
6
7
8
9
10
11
11 10
9
8
7
6
5
4
3
2
1
A
A
B
B
C
D
C
D
E
E
F
F
G
G
H
J
H
J
K
K
L
L
M
M
N
P
R
N
P
R
A
A
1.00
5.00
10.00
13.00 0.10
B
B
13.00 0.10
0.15(4X)
NOTES :
SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD)
PACKAGE WEIGHT : 0.475g
JEDECREFERENCE: MO-216 / DESIGN 4.6C
PACKAGE CODE : BB0AC
SEATING PLANE
C
51-85180-*A
Quad Data Rate SRAM and QDR SRAM comprise a new family of products developed by Cypress, IDT, NEC, Renesas and
Samsung. All product and company names mentioned in this document are trademarks of their respective holders.
Document #: 38-05625 Rev. *A
Page 17 of 18
© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C1302DV25
Document History Page
Document Title:CY7C1302DV25 9-Mb Burst of 2 Pipelined SRAM with QDR™ Architecture
Document Number: 38-05625
Orig. of
REV.
**
ECN NO.
253010
436864
Issue Date
See ECN
See ECN
Change
Description of Change
SYT
New Data Sheet
Converted from Preliminary to Final
*A
NXR
Removed 133 MHz & 100 MHz from product offering
Included the Industrial Operating Range.
Changed C/C Description in the Features Section & Pin Description Table
Changed t
from 100 ns to 50 ns, changed t from 10 MHz to 20 MHz and
TCYC
TF
changed t and t from 40 ns to 20 ns in TAP AC Switching Characteristics
TH
TL
table
Modified the ZQ pin definition as follows:
Alternately, this pin can be connected directly to V
minimum impedance mode
, which enables the
DDQ
Included Maximum Ratings for Supply Voltage on V
Relative to GND
DDQ
Changed the Maximum Ratings for DC Input Voltage from V
to V
DDQ
DD
Modified the Description of I from Input Load current to Input Leakage
X
Current on page # 13
Modified test condition in note# 14 from V
< V to V
≤ V
DDQ
DD
DDQ DD
Updated the Ordering Information table and replaced the Package Name
Column with Package Diagram
Document #: 38-05625 Rev. *A
Page 18 of 18
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