PMC Sierra Pm25LV512 User Manual

PMC  
Pm25LV512 / Pm25LV010  
512 Kbit / 1 Mbit 3.0 Volt-only, Serial Flash Memory  
With 25 MHz SPI Bus Interface  
FEATURES  
Block Write Protection  
- The Block Protect (BP1, BP0) bits allow part or entire  
of the memory to be configured as read-only.  
Single Power Supply Operation  
- Low voltage range: 2.7 V - 3.6 V  
• Memory Organization  
- Pm25LV512: 64K x 8 (512 Kbit)  
Hardware Data Protection  
- Write Protect (WP#) pin will inhibit write operations  
to the status register  
- Pm25LV010: 128K x 8 (1 Mbit)  
Cost Effective Sector/Block Architecture  
- Uniform 4 Kbyte sectors  
- Uniform 32 Kbyte blocks (8 sectors per block)  
- Two blocks with 32 Kbytes each (512 Kbit)  
- Four blocks with 32 Kbytes each (1 Mbit)  
- 128 pages per block  
Page Program (up to 256 Bytes)  
- Typical 2 ms per page program time  
Sector, Block and Chip Erase  
- Typical 40 ms sector/block/chip erase time  
Single Cycle Reprogramming for Status Register  
- Build-in erase before programming  
Serial Peripheral Interface (SPI) Compatible  
- Supports SPI Modes 0 (0,0) and 3 (1,1)  
High Product Endurance  
- Guarantee 100,000 program/erase cycles per single  
sector (preliminary)  
High Performance Read  
- 25 MHz clock rate (maximum)  
- Minimum 20 years data retention  
Page Mode for Program Operations  
- 256 bytes per page  
Industrial Standard Pin-out and Package  
- 8-pin JEDEC SOIC  
- 8-contact WSON  
- Optional lead-free (Pb-free) packages  
GENERAL DESCRIPTION  
The Pm25LV512/010 are 512 Kbit/1 Mbits 3.0 Volt-only serial Flash memories. These devices are designed to use  
a single low voltage, range from 2.7 Volt to 3.6 Volt, power supply to perform read, erase and program operations.  
The devices can be programmed in standard EPROM programmers as well.  
The device is optimized for use in many commercial applications where low-power and low-voltage operation are  
essential. The Pm25LV512/010 is enabled through the Chip Enable pin (CE#) and accessed via a 3-wire interface  
consisting of Serial Data Input (Sl), Serial Data Output (SO), and Serial Clock (SCK). All write cycles are com-  
pletely self-timed.  
Block Write protection for top 1/4, top 1/2 or the entire memory array (1M) or entire memory array (512K) is enabled  
by programming the status register. Separate write enable and write disable instructions are provided for additional  
data protection. Hardware data protection is provided via the WP pin to protect against inadvertent write attempts  
to the status register. The HOLD pin may be used to suspend any serial communication without resetting the serial  
sequence.  
The Pm25LV512/010 are manufactured on PMC’s advanced nonvolatile CMOS technology, P-FLASH™. The de-  
vices are offered in 8-pin JEDEC SOIC and 8-contact WSON packages with operation frequency up to 25 MHz.  
Programmable Microelectronics Corp.  
1
Issue Date: February, 2004, Rev: 1.4  
PMC  
Pm25LV512/010  
PRODUCT ORDERING INFORMATION  
Pm25LVxxx -25  
S
C
E
Environmental Attribute  
E = Lead-free (Pb-free) Package  
Blank = Standard Package  
Temperature Range  
C = Commercial (0°C to +85°C)  
Package Type  
S = 8-pin SOIC (8S)  
Q = 8-contact WSON (8Q)  
Operating Speed  
25 MHz  
PMC Device Number  
Pm25LV512 (512 Kbit)  
Pm25LV010 (1 Mbit)  
Part Number  
Operating Frequency (MHz)  
Package  
8S  
Temperature Range  
Pm25LV512-25SCE  
Pm25LV512-25SC  
Pm25LV512-25QCE  
Pm25LV010-25SCE  
Pm25LV010-25SC  
Pm25LV010-25QCE  
25  
8Q  
Commercial  
(0oC to + 85oC)  
8S  
25  
8Q  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
3
PMC  
Pm25LV512/010  
BLOCK DIAGRAM  
SPI Chip Block Diagram  
High Voltage  
Generator  
Control Logic  
Instruction Decoder  
Serial /Parallel convert Logic  
2KBit Page Buffer  
Status  
Register  
Address Latch  
& Counter  
Memory Array  
X-DECODER  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
4
PMC  
Pm25LV512/010  
SERIAL INTERFACE DESCRIPTION  
Pm25LV512/010 can be driven by a microcontroller on the SPI bus as shown in Figure 1. The serial communication  
term definitions are in the following section.  
MASTER: The device that generates the serial clock.  
SLAVE: Because the Serial Clock pin (SCK) is always an input, the Pm25LV512/010 always operates as a slave.  
TRANSMITTER/RECEIVER: The Pm25LV512/010 has separate pins designated for data transmission (SO) and  
reception(Sl).  
MSB: The Most Significant Bit (MSB) is the first bit transmitted and received.  
SERIAL OP-CODE: After the device is selected with CE# going low, the first byte will be received. This byte  
contains the op-code that defines the operations to be performed.  
INVALID OP-CODE: If an invalid op-code is received, no data will be shifted into the Pm25LV512/010, and the serial  
output pin (SO) will remain in a high impedance state until the falling edge of CE# is detected again. This will  
reinitialize the serial communication.  
Figure 1. Bus Master and SPI Memory Devices  
SDO  
SPI Interface with  
(0, 0) or (1, 1)  
SDI  
SCK  
SCK SO  
SI  
SCK SO  
SI  
SCK SO  
SI  
Bus Master  
SPI Memory  
Device  
SPI Memory  
Device  
SPI Memory  
Device  
CS3 CS2 CS1  
CE#  
WP# HOLD# CE#  
WP# HOLD# CE#  
WP# HOLD#  
Note: 1. The Write Protect (WP#) and Hold (HOLD#) signals should be driven, High or Low as appropriate.  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
5
PMC  
Pm25LV512/010  
SERIAL INTERFACE DESCRIPTION (CONTINUED)  
SPI MODES  
These devices can be driven by microcontroller with its available from the falling edge of Serial Clock (SCK).  
SPIperipheralrunningineitherofthetwofollowingmodes:  
Mode 0 = (0, 0)  
Mode 3 = (1, 1)  
The difference between the two modes, as shown in  
Figure 2, is the clock polarity when the bus master is in  
Stand-by mode and not transfering data:  
For these two modes, input data is latched in on the - Clock remains at 0 (SCK = 0) for Mode 0 (0, 0)  
rising edge of Serial Clock (SCK), and output data is  
- Clock remains at 1 (SCK = 1) for Mode 3 (1, 1)  
Figure 2. SPI Modes  
Mode 0 (0  
Mode 3 (1  
0)  
1)  
SCK  
SCK  
SI  
SO  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
6
PMC  
Pm25LV512/010  
DEVICE OPERATION  
The Pm25LV512/010 is designed to interface directly with the synchronous serial peripheral interface (SPI) of the  
6800 type series of microcontrollers.  
The Pm25LV512/010 utilizes an 8-bit instruction register. The list of instructions and their operation codes are  
contained in Table 1. All instructions, addresses, and data are transferred with the MSB first and start with a high-  
to-low transition.  
Write is defined as program and/or erase in this specification. The following commands, PAGE PROGRAM,  
SECTOR ERASE, BLOCK ERASE, CHIP ERASE, and WRSR are write instructions for Pm25LV512/010.  
Table 1. Instruction Set for the Pm25LV512/010  
Instruction Name  
Instruction Format  
Hex Code  
Operation  
WREN  
0000 0110  
0000 0100  
0000 0101  
0000 0001  
0000 0011  
0000 1011  
0000 0010  
1101 0111  
1101 1000  
1100 0111  
1010 1011  
06h  
04h  
05h  
01h  
03h  
0Bh  
02h  
D7h  
D8h  
C7h  
ABh  
Set Write Enable Latch  
WRDI  
Reset Write Enable Latch  
RDSR  
Read Status register  
WRSR  
Write Status Register  
READ  
Read Data from Memory Arrary  
Read Data from Memory at Higher Speed  
Program Data Into Memory Array  
Erase One Sector in Memory Array  
Erase One Block in Memory Array  
Erase Entire Memory Array  
Read Manufacturer and Product ID  
FAST_READ  
PG_ PROG  
SECTOR_ERASE  
BLOCK_ERASE  
CHIP_ERASE  
RDID  
READ PRODUCT ID (RDID): The RDID instruction allows the user to read the manufacturer and product ID of the  
device. The instruction code is followed by three dummy bytes, each bit being latched-in on Serial Data Input (SI)  
during the rising edge of Serial Clock (SCK). Then the first manufacturer ID (9Dh) is shifted out on Serial Data  
Output (SO), followed by the device ID (7Bh = Pm25LV512; 7Ch = Pm25LV010) and the second manufacturer ID  
(7Fh), each bit been shifted out during the falling edge of Serial Clock (SCK).  
Table 2. Product Identification  
Product Identification  
Manufacturer ID  
Device ID:  
Data  
9Dh  
Pm25LV512  
7Bh  
7Ch  
Pm25LV010  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
7
PMC  
Pm25LV512/010  
WRITE ENABLE (WREN): The device will power up in the write disable state when Vcc is applied. All write  
instructions must therefore be preceded by the WREN instruction.  
WRITE DISABLE (WRDI): To protect the device against inadvertent writes, the WRDI instruction disables all write  
commands. The WRDI instruction is independent of the status of the WP# pin.  
READ STATUS REGISTER (RDSR): The RDSR instruction provides access to the status register. The READY/  
BUSY and write enable status of the device can be determined by the RDSR instruction. Similarly, the Block Write  
Protection bits indicate the extent of protection employed. These bits are set by using the WRSR instruction.  
During internal write cycles, all other commands will be ignored except the RDSR instruction.  
Table 3. Status Register Format  
Bit 7  
Bit 6  
Bit 5  
Bit 4  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
WPEN  
X
X
X
BP1  
BP0  
WEN  
RDY  
Table 4. Read Status Register Bit Definition  
Bit  
Definition  
Bit 0 = 0 indicates the device is READY.  
Bit 0 (RDY)  
Bit 0 = 1 indicates the write cycle is in progress and the device is  
BUSY.  
Bit 1 = 0 indicates the device is not WRITE ENABLED.  
Bit 1 = 1 indicates the device is WRITE ENABLED.  
Bit 1 (WEN)  
Bit 2 (BP0)  
Bit 3 (BP1)  
See Table 5.  
See Table 5.  
Bits 4-6 are 0s when device is not in an internal write cycle.  
WPEN = 0 blocks the function of Write Protect pin (WP#).  
Bit 7 (WPEN)  
WPEN = 1 activates the Write Protect pin (WP#).  
See Table 6 for details.  
Bits 0-7 are 1s during an internal write cycle.  
WRITE STATUS REGISTER (WRSR): The WRSR instruction allows the user to select one of four levels of protec-  
tion for the Pm25LV010. The Pm25LV010 is divided into four blocks where the top quarter (1/4), top half (1/2), or all  
of the memory blocks can be protected (locked out) from write. The Pm25LV512 is divided into 2 blocks where all  
of the memory blocks can be protected (locked out) from write. Any of the locked-out blocks will therefore be READ  
only. The locked-out block and the corresponding status register control bits are shown in Table 5.  
The three bits, BP0, BP1, and WPEN, are nonvolatile cells that have the same properties and functions as the  
regular memory cells (e.g., WREN, RDSR).  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
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PMC  
Pm25LV512/010  
Table 5. Block Write Protect Bits  
Status Register Bits  
Pm25LV512  
Array Addresses  
Pm25LV010  
Locked-out  
Block(s)  
Array Addresses  
Locked-out  
Block(s)  
Level  
0
BP1  
BP0  
Locked Out  
Locked Out  
0
0
1
0
1
0
None  
None  
Block 4  
1(1/4)  
2(1/2)  
None  
None  
018000 - 01FFFF  
010000 - 01FFFF  
Block 3, 4  
All Blocks  
(1 - 2)  
All Blocks  
(1 - 4)  
3(All)  
1
1
000000-00FFFF  
000000 - 01FFFF  
The WRSR instruction also allows the user to enable or disable the Write Protect (WP#) pin through the use of the  
Write Protect Enable (WPEN) bit. Hardware write protection is enabled when the WP# pin is low and the WPEN bit  
is "1". Hardware write protection is disabled when either the WP# pin is high or the WPEN bit is "0." When the  
device is hardware write protected, writes to the Status Register, including the Block Protect bits and the WPEN  
bit, and the locked-out blocks in the memory array are disabled. Write is only allowed to blocks of the memory  
which are not locked out. The WRSR instruction is self-timed to automatically erase and program BP0, BP1, and  
WPEN bits. In order to write the status register, the device must first be write enabled via the WREN instruction.  
Then, the instruction and data for the three bits are entered. During the internal write cycle, all instructions will be  
ignored except RDSR instructions. The Pm25LV512/010 will automatically return to write disable state at the  
completion of the WRSR cycle.  
Note: When the WPEN bit is hardware write protected, it cannot be changed back to "0", as long as the WP# pin  
is held low.  
Table 6. WPEN Operation  
WPEN  
WP  
X
WEN  
ProtectedBlocks  
Protected  
UnprotectedBlocks  
Protected  
Status Register  
Protected  
Writable  
0
0
0
1
0
1
0
1
X
Protected  
Writable  
1
Low  
Low  
High  
High  
Protected  
Protected  
Protected  
Protected  
Protected  
Writable  
1
Protected  
Writable  
X
X
Protected  
Protected  
Protected  
Writable  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
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PMC  
Pm25LV512/010  
READ: Reading the Pm25LV512/010 via the SO (Serial Output) pin requires the following sequence. After the CE#  
line is pulled low to select a device, the READ instruction is transmitted via the Sl line followed by the byte address  
to be read (Refer to Table 7). Upon completion, any data on the Sl line will be ignored. The data (D7-D0) at  
the specified address is then shifted out onto the SO line. If only one byte is to be read, the CE# line should be  
driven high after the data comes out. The READ instruction can be continued since the byte address is automati-  
cally incremented and data will continue to be shifted out. For the Pm25LV512/010, when the highest address is  
reached, the address counter will roll over to the lowest address allowing the entire memory to be read in one  
continuous READ instruction.  
FAST_READ: The device is first selected by driving CE# low. The FAST READ instruction is followed by a 3-byte  
address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCK (Serial Clock). Then  
the memory contents, at that address, is shifted out on SO (Serial Output), each bit being shifted out, at a  
maximum frequency fFR, during the falling edge of SCK (Serial Clock).  
The first byte addressed can be at any location. The address is automatically incremented to the next higher  
address after each byte of data is shifted out. When the highest address is reached, the address counter will roll  
over to the lowest address allowing the entire memory to be read with a single FAST READ instruction. The FAST  
READ instruction is terminated by driving CE# high.  
PAGE PROGRAM (PG_PROG): In order to program the Pm25LV512/010, two separate instructions must be  
executed. First, the device must be write enabled via the WREN instruction. Then the PAGE PROGRAM instruc-  
tion can be executed. Also, the address of the memory location(s) to be programmed must be outside the pro-  
tected address field location selected by the Block Write Protection Level. During an internal self-timed program-  
ming cycle, all commands will be ignored except the RDSR instruction.  
The PAGE PROGRAM instruction requires the following sequence. After the CE# line is pulled low to select the  
device, the PAGE PROGRAM instruction is transmitted via the Sl line followed by the address and the data (D7-D0)  
to be programmed (Refer to Table 7). Programming will start after the CE# pin is brought high. The low-to-high  
transition of the CE# pin must occur during the SCK low time immediately after clocking in the D0 (LSB) data bit.  
The READY/BUSY status of the device can be determined by initiating a RDSR instruction. If Bit 0 = 1, the program  
cycle is still in progress. If Bit 0=0, the program cycle has ended. Only the RDSR instruction is enabled during the  
program cycle. A single PROGRAM instruction programs 1 to 256 consecutive bytes within a page if it is not write  
protected. The starting byte could be anywhere within the page. When the end of the page is reached, the address  
will wrap around to the beginning of the same page. If the data to be programmed are less than a full page, the data  
of all other bytes on the same page will remain unchanged. If more than 256 bytes of data are provided, the address  
counter will roll over on the same page and the previous data provided will be replaced. The same byte cannot be  
reprogrammed without erasing the whole sector/block first. The Pm25LV512/010 will automatically return to the  
write disable state at the completion of the PROGRAM cycle.  
Note: If the device is not write enabled (WREN) the device will ignore the Write instruction and will return to the  
standby state, when CE# is brought high. A new CE# falling edge is required to re-initiate the serial  
communication.  
Table 7. Address Key  
Address  
AN  
Pm25LV512  
A15 - A0  
Pm25LV010  
A16 - A0  
Don't Care Bits  
A23 - A16  
A23 - A17  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
10  
PMC  
Pm25LV512/010  
SECTOR_ERASE, BLOCK_ERASE: Before a byte can be reprogrammed, the sector/block which contains the  
byte must be erased. In order to erase the Pm25LV512/010, two separate instructions must be executed. First, the  
device must be write enabled via the WREN instruction. Then the SECTOR ERASE or BLOCK ERASE instruction  
can be executed.  
Table 8. Block Addresses  
Block Address  
000000 to 007FFF  
008000 to 00FFFF  
010000 to 017FFF  
018000 to 01FFFF  
Pm25LV512 Block  
Pm25LV010 Block  
Block 1  
Block 1  
Block 2  
N/A  
Block 2  
Block 3  
N/A  
Block 4  
The BLOCK ERASE instruction erases every byte in the selected block if the block is not locked out. Block  
address is automatically determined if any address within the block is selected. The BLOCK ERASE instruction  
is internally controlled; it will automatically be timed to completion. During this time, all commands will be ignored,  
except RDSR instruction. The Pm25LV512/010 will automatically return to the write disable state at the completion  
of the BLOCK ERASE cycle.  
CHIP_ERASE: As an alternative to the SECTOR and BLOCK ERASE, the CHIP ERASE instruction will erase  
every byte in all blocks that are not locked out. First, the device must be write enabled via the WREN instruction.  
Then the CHIP ERASE instruction can be executed. The CHIP ERASE instruction is internally controlled; it will  
automatically be timed to completion. The CHIP ERASE cycle time maximum is 100 miliseconds. During the  
internal erase cycle, all instructions will be ignored except RDSR. The Pm25LV512/010 will automatically return to  
the write disable state at the completion of the CHIP ERASE.  
HOLD: The HOLD# pin is used in conjunction with the CE# pin to select the Pm25LV512/010. When the device is  
selected and a serial sequence is underway, HOLD# pin can be used to pause the serial communication with the  
master device without resetting the serial sequence. To pause, the HOLD# pin must be brought low while the SCK  
pin is low. To resume serial communication, the HOLD# pin is brought high while the SCK pin is low (SCK may still  
toggle during HOLD). Inputs to the Sl pin will be ignored while the SO pin is in the high impedance state.  
HARDWARE WRITE PROTECT: The Pm25LV512/010 has a write lockout feature that can be activated by assert-  
ing the write protect pin (WP#). When the lockout feature is activated, locked-out sectors will be READ only. The  
write protect pin will allow normal read/write operations when held high. When the WP# is brought low and WPEN  
bit is "1", all write operations to the status register are inhibited. WP# going low while CE# is still low will interrupt  
a write to the status register. If the internal status register write cycle has already been initiated, WP# going low will  
have no effect on any write operation to the status register. The WP# pin function is blocked when the WPEN bit in  
the status register is "0". This will allow the user to install the Pm25LV512/010 in a system with the WP# pin tied  
to ground and still be able to write to the status register. All WP# pin functions are enabled when the WPEN bit is  
set to "1".  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
11  
PMC  
Pm25LV512/010  
ABSOLUTE MAXIMUM RATINGS (1)  
Temperature Under Bias  
Storage Temperature  
-65oC to +125oC  
-65oC to +125oC  
240oC 3 Seconds  
260oC 3 Seconds  
-0.5 V to VCC + 0.5 V  
-0.5 V to VCC + 0.5 V  
-0.5 V to +6.0 V  
Standard Package  
Lead-free Package  
Surface Mount Lead Soldering Temperature  
(2)  
Input Voltage with Respect to Ground on All Pins  
All Output Voltage with Respect to Ground  
(2)  
VCC  
Notes:  
1. Stresses under those listed in “Absolute Maximum Ratings” may cause permanent damage  
to the device. This is a stress rating only. The functional operation of the device or any other  
conditions under those indicated in the operational sections of this specification is not  
implied. Exposure to absolute maximum rating condition for extended periods may affected  
device reliability.  
2. Maximum DC voltage on input or I/O pins are VCC + 0.5 V. During voltage transitioning  
period, input or I/O pins may overshoot to VCC + 2.0 V for a period of time up to 20 ns.  
Minimum DC voltage on input or I/O pins are -0.5 V. During voltage transitioning period,  
input or I/O pins may undershoot GND to -2.0 V for a period of time up to 20 ns.  
DC AND AC OPERATING RANGE  
Part Number  
Pm25LV512/010  
0oC to 85oC  
Operating Temperature  
Vcc Power Supply  
2.7 V - 3.6 V  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
12  
PMC  
Pm25LV512/010  
DC CHARACTERISTICS  
Applicable over recommended operating range from:  
TAC = 0°C to +85°C, VCC = +2.7 V to +3.6 V (unless otherwise noted).  
Condition  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
VCC = 3.6V at 25 MHz, SO = Open  
ICC1  
ICC2  
ISB1  
ISB2  
ILI  
Vcc Active Read Current  
Vcc Program/Erase Current  
Vcc Standby Current CMOS  
Vcc Standby Current TTL  
Input Leakage Current  
Output Leakage Current  
Input Low Voltage  
10  
15  
15  
mA  
mA  
µA  
mA  
µA  
µA  
V
V
V
V
CC = 3.6V at 25 MHz, SO = Open  
30  
CC = 3.6V, CE# = VCC  
0.1  
0.05  
5
CC = 3.6V, CE# = VIH to VCC  
3
VIN = 0V to VCC  
VIN = 0V to VCC, TAC = 0oC to 85oC  
1
1
ILO  
VIL  
-0.5  
0.8  
VIH  
VOL  
VOH  
Input HIgh Voltage  
0.7VCC  
VCC + 0.3  
0.45  
V
Output Low Voltage  
IOL = 2.1 mA  
V
2.7V < VCC < 3.6V  
Output High Voltage  
IOH = -100 µA VCC - 0.2  
V
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
13  
PMC  
Pm25LV512/010  
AC CHARACTERISTICS  
Applicable over recommended operating range from TA = 0°C to +85°C, VCC = +2.7 V to +3.6 V  
CL = 1TTL Gate and 30 pF (unless otherwise noted).  
Symbol  
Parameter  
Min  
0
Typ  
Max  
Units  
Clock Frequency for  
FAST_READ  
fFR  
25  
MHz  
fR  
Clock Frequency for READ instructions  
Input Rise Time  
0
20  
20  
20  
MHz  
ns  
tRI  
tFI  
Input Fall Time  
ns  
tCKH  
SCK High Time  
20  
20  
25  
25  
25  
5
ns  
tCKL  
tCEH  
tCS  
tCH  
tDS  
tDH  
tHS  
tHD  
tV  
SCK Low Time  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ms  
ms  
ms  
CE High Time  
CE Setup Time  
CE Hold Time  
Data In Setup Time  
Data in Hold Time  
Hold Setup Time  
Hold Time  
5
15  
15  
Output Valid  
15  
tOH  
tLZ  
Output Hold Time  
Hold to Output Low Z  
Hold to Output High Z  
Output Disable Time  
Secter/Block/Chip Erase Time  
Page Program Time  
Write Status Register time  
0
200  
200  
100  
100  
5
tHZ  
tDIS  
tEC  
tpp  
40  
2
tw  
40  
100  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
14  
PMC  
Pm25LV512/010  
AC CHARACTERISTICS (CONTINUED)  
AC WAVEFORMS(1)  
tC E H  
VIH  
CE#  
VIL  
tC S  
tC H  
VIH  
tCKL  
SCK  
SI  
tC K H  
VIL  
tD S  
tD H  
VIH  
VIL  
VALID IN  
tO H  
tDIS  
tV  
VOH  
HI-Z  
HI-Z  
SO  
VOL  
Note: 1. For SPI Mode 0 (0,0)  
OUTPUT TEST LOAD  
INPUT TEST WAVEFORMS  
AND MEASUREMENT LEVEL  
3.3 V  
3.0 V  
AC  
1.8 K  
Input  
1.5 V  
Measurement  
Level  
OUTPUT PIN  
0.0 V  
1.3 K  
30 pF  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
15  
PMC  
Pm25LV512/010  
AC CHARACTERISTICS (CONTINUED)  
HOLD Timing  
CE#  
tH D  
tH D  
SCK  
tH S  
tH S  
HOLD#  
tH Z  
SO  
tLZ  
PIN CAPACITANCE ( f = 1 MHz, T = 25°C )  
Typ  
4
Max  
6
Units  
pF  
Conditions  
CIN  
VIN = 0 V  
COUT  
8
12  
pF  
VOUT = 0 V  
Note: These parameters are characterized but not 100% tested.  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
16  
PMC  
Pm25LV512/010  
TIMING DIAGRAMS  
RDID Timing  
CE#  
7
9
46  
0
1
8
38 39  
47  
54  
31  
SCK  
SI  
INSTRUCTION  
1010 1011b  
3 Dummy Bytes  
HIGH IMPEDANCE  
SO  
Manufacture ID1  
Device ID  
Manufacture ID2  
WREN Timing  
CE#  
SCK  
SI  
INSTRUCTION = 0000 0110b  
HI-Z  
SO  
WRDI Timing  
CE#  
SCK  
SI  
INSTRUCTION = 0000 0100b  
HI-Z  
SO  
nnnnnnN  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
17  
PMC  
Pm25LV512/010  
RDSR Timing  
CE#  
1
2
3
7
9
0
5
6
8
10  
11  
12  
13  
14  
4
SCK  
SI  
INSTRUCTION = 0000 0101b  
DATA OUT  
HIGH IMPEDANCE  
7
6
5
4
3
2
1
0
SO  
MSB  
WRSR Timing  
CE#  
0
1
2
3
4
5
6
7
8
7
9
6
10  
11  
12  
13  
14  
15  
SCK  
DATA IN  
3
SI  
2
INSTRUCTION = 0000 0001b  
5
4
1
0
HIGH IMPEDANCE  
SO  
READ Timing  
CE#  
0
1
2
3
4
5
6
7
8
9
10 11 28 29 30 31 32 33 34 35 36 37 38  
SCK  
3-BYTE ADDRESS  
...  
SI  
23 22 21  
3
2
1
0
INSTRUCTION = 0000 0011b  
HIGH IMPEDANCE  
7
6
5
4
3
2
1
0
SO  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
18  
PMC  
Pm25LV512/010  
FAST READ Timing  
CE#  
0
1
2
3
4
5
6
7
8
9
10 11 28 29 30 31  
SCK  
3-BYTE ADDRESS  
...  
SI  
23 22 21  
3
2
1
0
INSTRUCTION = 0000 1011b  
HIGH IMPEDANCE  
SO  
CE#  
SCK  
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47  
DUMMY BYTE  
3
7
6
5
4
2
1
0
SI  
DATA OUT 1  
DATA OUT 2  
HIGH IMPEDANCE  
SO  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
PAGE PROGRAM Timing  
CE#  
0
1
2
3
4
5
6
7
8
9
10 11 28 29 30 31 32 33 34  
SCK  
256th BYTE DATA-IN  
1st BYTE DATA-IN  
3-BYTE ADDRESS  
23 22 21  
SI  
INSTRUCTION = 0000 0010b  
3
2
1
0
7
6
5
4
3
2
1
0
HIGH IMPEDANCE  
SO  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
19  
PMC  
Pm25LV512/010  
SECTOR ERASE Timing  
CE#  
0
1
2
3
4
5
6
7
8
9
10 11 28 29 30  
31  
SCK  
SI  
3-BYTE ADDRESS  
...  
INSTRUCTION = 1101 0111b  
23 22 21  
3
2
1
0
HIGH IMPEDANCE  
SO  
BLOCK ERASE Timing  
CE#  
0
1
2
3
4
5
6
7
8
9
10 11 28 29 30  
31  
SCK  
SI  
3-BYTE ADDRESS  
...  
INSTRUCTION = 1101 1000b  
23 22 21  
3
2
1
0
HIGH IMPEDANCE  
SO  
CHIP ERASE Timing  
CE#  
0
1
2
3
4
5
6
7
SCK  
SI  
INSTRUCTION = 1100 0111b  
HIGH IMPEDANCE  
SO  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
20  
PMC  
Pm25LV512/010  
PROGRAM/ERASE PERFORMANCE  
Parameter  
Sector Erase Time  
Block Erase Time  
Chip Erase Time  
Unit  
ms  
Typ  
40  
Max  
100  
100  
100  
Remarks  
From writing erase command to erase completion  
From writing erase command to erase completion  
From writing erase command to erase completion  
ms  
40  
ms  
40  
From writing program command to program  
completion  
Page Programming Time  
ms  
2
5
Note: These parameters are characterized and are not 100% tested.  
RELIABILITY CHARACTERISTICS (1)  
Parameter  
Endurance  
Min  
100,000 (2)  
20  
Typ  
Unit  
Test Method  
Cycles JEDEC Standard A117  
Years JEDEC Standard A103  
Data Retention  
ESD - Human Body Model  
ESD - Machine Model  
Latch-Up  
2,000  
200  
Volts  
Volts  
mA  
JEDEC Standard A114  
JEDEC Standard A115  
JEDEC Standard 78  
100 + ICC1  
Note: 1. These parameters are characterized and are not 100% tested.  
2. Preliminary specification only and will be formalized after cycling qualification test.  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
21  
PMC  
Pm25LV512/010  
PACKAGE TYPE INFORMATION  
8S  
8-Pin JEDEC Small Outline Integrated Circuit (SOIC) Package (measure in millimeters)  
Top View  
Side View  
0.51  
0.33  
5.00  
4.80  
1.27 BSC  
4.00  
3.80  
0.25  
0.10  
6.20  
5.80  
1.75  
1.35  
End View  
45º  
0.25  
0.19  
1.27  
0.40  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
22  
PMC  
Pm25LV512/010  
PACKAGE TYPE INFORMATION (CONTINUED)  
8Q  
8-Contact Ulta-Thin Small Outline No-Lead (WSON) Package (measure in millimeters)  
Top View  
Side View  
5.00  
BSC  
6.00  
BSC  
0.25  
0.19  
0.80  
0.70  
Pin 1  
Bottom View  
1.27  
BSC  
4.00  
0.48  
0.35  
0.75  
0.50  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
23  
PMC  
Pm25LV512/010  
REVISION HISTORY  
Date  
Revision No. Description of Changes  
Page No.  
All  
October, 2002  
December, 2002  
Jun, 2003  
1.0  
1.1  
1.2  
New publication, Preliminary Spec  
Formal Release  
All  
Added WSON package option  
Added Lead-free package options  
1, 2, 3, 23  
1, 3, 12  
Upgraded guranteed program/erase cycles from 50,000  
to 100,000 (preliminary)  
December, 2003  
February, 2004  
1.3  
1.4  
1, 21  
Updated and redrawed package dimension  
Improve operation temperature range  
22, 23  
All  
Programmable Microelectronics Corp.  
Issue Date: February, 2004, Rev: 1.4  
24  

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