Texas Instruments Power Supply TPS40003 User Manual

User’s Guide  
TPS40003 Based 5–A Converter in  
Less Than One Square Inch  
User’s Guide  
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DYNAMIC WARNINGS AND RESTRICTIONS  
It is important to operate this EVM within the input voltage range of 0 V to 5.5 V.  
Exceeding the specified input range may cause unexpected operation and/or irreversible damage to the EVM.  
If there are questions concerning the input range, please contact a TI field representative prior to connecting  
the input power.  
Applying loads outside of the specified output range may result in unintended operation and/or possible  
permanent damage to the EVM. Please consult the EVM Users Guide prior to connecting any load to the EVM  
output. If there is uncertainty as to the load specification, please contact a TI field representative.  
During normal operation, some circuit components may have case temperatures greater than 50°C. The EVM  
is designed to operate properly with certain components above 50°C as long as the input and output ranges are  
maintained. These components include but are not limited to linear regulators, switching transistors, pass  
transistors, and current sense resistors. These types of devices can be identified using the EVM schematic  
located in the EVM Users Guide. When placing measurement probes near these devices during operation,  
please be aware that these devices may be very warm to the touch.  
Mailing Address:  
Texas Instruments  
Post Office Box 655303  
Dallas, Texas 75265  
Copyright 2003, Texas Instruments Incorporated  
3
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SLUU130A September 2002 Revised February 2003  
TPS40003-Based 5-A Converter in Less Than One Square  
Inch  
Mark Dennis  
Systems Power  
Contents  
1
2
3
4
5
6
7
8
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Design Procedure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
PowerPAD Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Test Results/Performance Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
PCB Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
List of Material . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
1
Introduction  
The TPS40002 and the TPS40003 are voltage-mode, synchronous buck PWM controllers that utilize TIs  
proprietary Predictive Gate Drive technology to wring maximum efficiency from step-down converters. These  
controllers provide a bootstrap charging circuit to allow the use of an N-channel MOSFET as the topside buck  
switch to reduce conduction losses and increase silicon device utilization. Predictive Gate Drive technology  
controls the delay from main switch turn-off to synchronous rectifier turn-on and also the delay from rectifier  
turn-off to main switch turn-on. This allows minimization of the losses in the MOSFET body diodes by reducing  
conduction and reverse recovery time. This users guide provides details on a 5-A buck converter that converts  
3.3 V down to a 1.2-V level utilizing the TPS40003 controller, with less than one square inch board area.  
A schematic for the board is shown in Figure 1. A list of material is provided in the final section.  
2
Features  
The specification for this board is as follows:  
D
D
D
D
D
D
V
V
= 3.0 V to 3.6 V  
IN  
= 1.2 V ± 3%  
OUT  
0 A I  
5 A  
OUT  
Efficiency > 90% with a load of 2 A  
Output voltage ripple < 2% V  
OUT  
Physical size < 1 square inch circuit area  
4
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3
Schematic  
Figure 1. Application Diagram for the TPS40002/3  
TPS40003-Based 5-A Converter in Less Than One Square Inch  
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4
Design Procedure  
4.1 TPS4000X Family Device Selection  
The TPS4000X family of devices offers four selections to encompass the frequency and output current mode  
choices. The TPS40003 is selected for the following reasons. First, the internal oscillator components set a fixed  
switching frequency of 600 kHz. This allows minimally sized filter components in this compact design. The other  
choice related to the TPS4000X family involves the selection of Discontinuous Current Mode (DCM) operation  
or Continuous Current Mode (CCM) operation at lighter loads. In this design the TPS40003 is selected to keep  
the current continuous all the way to zero load, to provide robust control characteristics.  
4.2 Inductance Value  
The output inductor value is selected to set the ripple current to a value most suited to overall circuit functionality.  
The inductor value is calculated in equation (1).  
V
V
ȡ1 *  
ȣ+  
ȧ
OUT  
OUT  
1.2 V  
600 kHz   1.25 A  
1.2 V  
3.6 V  
(1)  
  ǒ1 * Ǔ + 1.07 mH  
L +  
ȧ
f   I  
V
RIPPLEȢ  
IN(max)  
where I  
is chosen to be 25% of I  
, or 1.25 A. A common value of 1 µH is selected.  
RIPPLE  
OUT  
4.3 Input Capacitor Selection  
Bulk input capacitor selection is based on allowable input voltage ripple and required RMS current carrying  
capability. In typical buck converter applications, the converter is fed from an upstream power converter with  
its own output capacitance. In this converter, onboard capacitance is provided to supply the current required  
during the top MOSFET on-time while keeping ripple within acceptable limits. For this power level, input voltage  
ripple of 150 mV is reasonable, and a conservative minimum value of capacitance is calculated in equation (2).  
I   Dt  
DV  
5 A   606 ns  
(2)  
C +  
+
+ 20 mF  
0.15 V  
To meet this requirement with the lowest size and cost, a single 22 µF, X5R ceramic capacitor might be  
considered. Although these capacitors have an extremely small resistance a typical datasheet indicates that  
the part undergoes a 30°C temperature rise with 2 A  
current at 500 kHz. With V = 3.0 V our circuit requires  
of current, so for a conservative design two capacitors are selected to allow for conservative  
RMS  
IN  
nearly 2 A  
RMS  
current derating. These capacitors function as power bypass components and should be located near the  
MOSFET package, to keep the high frequency current flow in a tight loop. The low impedance characteristics  
of the dual ceramic capacitors help to reduce noise on the V  
MOSFET current sense is referenced to this point, so noise at the device must be kept to a low level.  
supply of the device. Specifically, the high side  
DD  
6
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4.4 Output Capacitor Selection  
Selection of the output capacitor is based on many application variables, including function, cost, size, and  
availability. The minimum allowable output capacitance is determined by the amount of inductor ripple current  
and the allowable output ripple in equation (3).  
I
1.25 A  
8   600 kHz   12 mV  
RIPPLE  
(3)  
C
+
+
+ 22 mF  
OUT(min)  
8   f   V  
RIPPLE  
In this design, C  
is 22 µF with V  
= 12 mV to allow for some margin. However, this only affects the  
RIPPLE  
OUT(min)  
capacitive component of the ripple voltage. In addition, the voltage component due to the capacitor ESR must  
be considered in equation (4).  
V
0.012 V  
1.25 A  
RIPPLE  
RIPPLE  
(4)  
ESR  
v
+
+ 9.6 mW  
Cout  
I
For compactness while maintaining transient response capability, two 22-µF ceramic capacitors are fitted in  
parallel. The total ESR of these capacitors is below 3 m, and contributes only a few mV to the output voltage  
ripple.  
4.5 MOSFET Selection  
The small physical size of this design requires the use of a single SO-8 package which contains dual N-channel  
MOSFETs. MOSFETs with an R  
amount at full load.  
of 18 mare selected to keep the conduction losses to a manageable  
DS(on)  
4.6 Short Circuit Protection  
The TPS40003 implements short circuit protection by comparing the voltage across the topside MOSFET while  
it is on to a voltage dropped from VDD by R  
due to an internal current source of 15 µA inside pin 1. Due to  
LIM  
tolerances in the current source and variations in the power MOSFET on-voltage versus temperature, the short  
circuit level can protect against gross overcurrent conditions only, and should be set higher than rated load. In  
this particular case, R  
is selected as:  
LIM  
2.5   I  
  0.018 W  
OUT  
(5)  
R
+ R1 +  
+ 15 kW  
LIM  
15 mA  
For this design, R  
= 15 k, and the factor of 2.5 in the equation accounts for the variations in component  
LIM  
tolerances over temperature and output current ripple. The high currents that are switched under short circuit  
conditions may cause SW pin 8 to be driven below ground several volts, possibly injecting substrate current  
which can cause improper operation of the device. A 3.3-resistor has been placed in series with this pin to  
limit its excursion to safe levels.  
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4.7 Compensation Design  
The TPS40003 uses voltage mode control in conjunction with a high frequency error amplifier. For the fastest  
transient response, the loop crossover frequency is set at 1/10 f , or 60 kHz. The power circuit L-C double pole  
S
corner frequency f is situated at 24 kHz, and the output capacitor ESR zero is far higher at approximately 1MHz.  
C
The feedback compensation network is implemented to provide two zeroes and three poles. The first pole is  
placed at the origin to improve dc regulation.  
The first zero is placed at approximately 2/3 f , 18 kHz,  
C
1
(6)  
(7)  
f
+
z1  
2   p   R   C  
2
4
The second zero is selected at f ,  
C
1
f
+
z2  
2   p   ǒR ) R  
Ǔ
  C  
12  
4
5
The two poles are placed at approximately 300 kHz, which is one-half the switching frequency,  
1
f
+
p1  
C  C  
(8)  
(9)  
4
8
ǒ Ǔ  
2   p   R   
2
C )C  
4
8
and  
f
1
+
p2  
2   p   R   C  
5
12  
8
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Figure 2 shows the plots for the closed loop gain and phase with V = 3.3 V and I  
IN  
frequency of 60 kHz the phase margin is approximately 51 degrees.  
= 4.4 A. At the crossover  
OUT  
GAIN AND PHASE MARGIN  
vs  
FREQUENCY  
40  
30  
150  
100  
50  
Phase  
20  
10  
0
0
–10  
–20  
–30  
–40  
–50  
–100  
–150  
Gain  
I
= 4.4 A  
LOAD  
I
V = 3.3 V  
100  
1000  
10000  
100000  
1000000  
Frequency – Hz  
Figure 2.  
4.8 Snubber Component Selection  
The switch node where Q1 and L1 come together is very noisy. An RC network fitted between this node and  
ground can help reduce ringing and voltage overshoot on Q1:B. This ringing noise should be minimized to  
prevent it from confusing the control circuitry which is monitoring this node for current limit and Predictive Gate  
Drive .  
As a starting point, the snubber capacitor, C9, is generally chosen to be 5 to 8 times larger than the parasitic  
capacitance at the node, which is primarily C  
of Q1:B. Since C  
is 440 pF for Q1:B, C9 is chosen to be 3.3 nF.  
OS  
OS  
R3 is empirically determined to be 2.2 , which minimizes the ringing and overshoot at the switch node. With  
2
low input voltages the power loss, 1/2×C×V ×f , is relatively small at 24 mW.  
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5
PowerPAD Packaging  
The TPS4000X family is available in the DGQ version of TIs PowerPAD thermally enhanced package. In the  
PowerPAD , a thermally conductive epoxy is utilized to attach the integrated circuit die to the leadframe die  
pad, which is exposed on the bottom of the completed package. The leadframe die pad can be soldered to the  
PCB using standard solder flow techniques when maximum heat dissipation is required. However, depending  
on power dissipation requirements, the PowerPAD may not need to soldered to the PCB.  
The PowerPAD package helps to keep the junction temperature rise relatively low even with the power  
dissipation inherent in the onboard MOSFET drivers. This power loss is proportional to switching frequency,  
drive voltage, and the gate charge needed to enhance the N-channel MOSFETs. Effective heat removal allows  
the use of ultra small packaging while maintaining high component reliability.  
To effectively remove heat from the PowerPAD package, a thermal land should be provided directly  
underneath the package whether the package needs to be soldered or not. This thermal land usually has vias  
that help to spread heat to internal copper layers and/or the opposite side of the PCB. The vias should not have  
thermal reliefs that are often used on ground planes, because this reduces the copper area which transfers heat.  
Additionally, the vias should be small enough so that the holes are effectively plugged when plated. This  
prevents the solder from wicking away from the connection between the PCB surface and the bottom of the part.  
A typical construction utilizes a few vias of 0.013diameter plated with 1 ounce copper in the land under the  
TPS40003. A typical layout pattern is shown in Figure 2, but does not show the copper land which would  
encompass the vias above and below the device.  
2.92mm  
(0.115)  
0.5mm  
(0.0197)  
Minimum  
PowerPad Y”  
1.7mm  
(0.068)  
1.40mm  
(0.055)  
0.28mm  
(0.011)  
Via Dia.  
0.33mm  
(0.013)  
Miminum  
PowerPad X”  
1.3mm  
(0.050)  
Figure 3. PowerPAD PCB Layout Guidelines  
The Texas Instrument document, PowerPAD Thermally Enhanced Package Application Report (SLMA002)  
should be consulted for more information on the PowerPAD package. This report offers in-depth information  
on the package, assembly and rework techniques, and illustrative examples of the thermal performance of the  
PowerPAD package.  
10  
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6
Test Results/Performance Data  
The test setup is shown in figure 4  
DC Power  
Supply  
Input wires 18 gauge  
or larger short as feasible  
C
DVM1  
IN  
+
CIN = 470 µF or larger, 6.3 V or higher,  
low ESR AIEA or OSCON capacitor.  
Place within 2 inches of J1.  
(+)  
()  
J1  
TP2  
TP1  
VIN  
GND  
TP3  
SCOPE  
TP5  
VOUT  
SLUP182  
GND  
J2  
DVM2  
TP4  
TP6  
(+)  
()  
Output wires 18 gauge  
or larger short as feasible  
LOAD  
(+)  
()  
Resistive load: 0.5 , 5 W  
Active Load: set for 2.4 A  
Figure 4.  
TPS40003-Based 5-A Converter in Less Than One Square Inch  
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Typical efficiency curves are shown in Figure 5 for an input of 3.3 V.  
EFFICIENCY  
vs  
OUTPUT CURRENT  
100  
95  
90  
85  
80  
75  
70  
65  
60  
55  
50  
0
1
2
3
4
5
6
I
Output Current A  
OUT  
Figure 5.  
Figure 6 shows the switch node during typical operation at full load. Note that there is very minimal body diode  
conduction in the bottom MOSFET. This is a result of using the predictive delay control implementation. This  
technique is able to dynamically change the delays in the MOSFET drive circuit to account for variations in line,  
load, and between devices.  
TYPICAL SWITCH NODE WAVEFORM  
2 V/div  
t Time 250 ns/div  
Figure 6.  
12  
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Circuit operation with an output short circuit is shown in Figure 7. After each restart into a short circuit the pulses  
terminate for a period of approximately 6 ms. This causes the input power to collapse to minuscule levels, and  
the circuit is protected.  
SHORT CIRCUIT OPERATION  
2 V/div  
t Time 1 ms/div  
Figure 7.  
Figure 8 shows the output voltage ripple which is approximately half the 24-mV limit.  
OUTPUT VOLTAGE RIPPLE  
10 mV/div  
t Time 500 ns/div  
Figure 8.  
TPS40003-Based 5-A Converter in Less Than One Square Inch  
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Figure 9 shows the startup waveforms with an input voltage of 3.3 V and a load of 0.3 . Note that the output  
is held low until V  
softstart control.  
(pin 4) goes above 0.12 V, and then the output comes up smoothly under closed loop  
SS  
STARTUP WAVEFORM  
1 V/div  
500 mV/div  
500 mV/div  
t Time 200 µs/div  
Figure 9.  
Figure 10 shows the transient response for a fast load step from 1 A to 2 A.  
TRANSIENT RESPONSE  
50 mV/div  
t Time 20 µs/div  
Figure 10.  
14  
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7
PCB Layout  
Figures 11 through13 show the top copper layer, the bottom copper layer, and top assembly layer, of SLUP182.  
Figure 12  
Figure 13  
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8
List of Material  
Table 1 lists the components used in this design. With minor component tweaks this design could be modified  
to meet a wide range of applications.  
Reference  
Qty  
4
1
1
1
1
1
1
1
2
1
1
1
1
1
1
1
1
1
5
2
1
1
Description  
Ceramic, 22 µF, 6.3 V, X5R, 20%, 1210  
Ceramic, 0.001 µF, 10 V, X5R, 10%, 805  
Ceramic, 0.0047 µF, 50 V, X7R, 10%  
Ceramic, 470 pF, 50 V, X7R, 10%  
Ceramic, 0.1 µF, 50 V, X5R, 10%  
Ceramic, 0.001 µF, 50 V, X7R, 10%  
Ceramic, 68 pF, 50 V, NPO, 10%  
Ceramic, 0.0033 µF, 50 V, X7R, 10%  
2 pin, 15 A, 5.1 mm  
Manufacturer  
Panasonic  
Panasonic  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
OST  
Part Number  
ECJ4YB0J226M  
ECJ2YB1A105K  
VJ0603Y472KXAAT  
VJ0603Y471KXAAT  
VJ0805Y104KXAAT  
VJ0603Y102KXAAT  
VJ0603A680KXAAT  
VJ0805Y332KXAAT  
ED1609  
Capacitor  
C1, C2, C5, C6  
C10  
C11  
C12  
C3  
C4  
C8  
C9  
Terminal Block  
Inductor  
J1, J2  
L1  
SMT, 1.0 µH, 8.5 A, 10 mΩ  
Vishay  
Fairchild  
Std  
IHLP2525CZ01  
FDS6898A  
MOSFET  
Resistor  
Q1  
Dual Nchannel, 20 V, 9.4 A, 18 mΩ  
Chip, 15 k, 1/16W, 1%  
R1  
Std  
R2  
Chip, 8.66 k, 1/16 W, 1%  
Std  
Std  
R3  
Chip, 2.2 , 1/10 W, 5%  
Std  
Std  
R4  
Chip, 12.1 k, 1/16 W, 1%  
Std  
Std  
R5  
Chip, 1 k, 1/16 W, 1%  
Std  
Std  
R6  
Chip, 16.9 , 1/16 W, 1%  
Std  
Std  
R7  
Chip, 3.3 , 1/16 W, 5%, 603  
Test point, red  
Std  
Std  
JACK  
JACK  
TP1, TP3, TP4,  
TP2, TP6  
TP5  
Farnell  
Farnell  
Tektronix  
TI  
240345  
Test point, black  
240333  
Adaptor  
Device  
3.5-mm probe clip (or 131503100)  
Syncronous buck controller, 600 kHz  
131424400  
TPS40003DGQ  
U1  
16  
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IMPORTANT NOTICE  
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,  
enhancements, improvements, and other changes to its products and services at any time and to discontinue  
any product or service without notice. Customers should obtain the latest relevant information before placing  
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and conditions of sale supplied at the time of order acknowledgment.  
TI warrants performance of its hardware products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI  
deems necessary to support this warranty. Except where mandated by government requirements, testing of all  
parameters of each product is not necessarily performed.  
TI assumes no liability for applications assistance or customer product design. Customers are responsible for  
their products and applications using TI components. To minimize the risks associated with customer products  
and applications, customers should provide adequate design and operating safeguards.  
TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right,  
copyright, maskworkright, orotherTIintellectualpropertyrightrelatingtoanycombination, machine, orprocess  
in which TI products or services are used. Information published by TI regarding third–party products or services  
does not constitute a license from TI to use such products or services or a warranty or endorsement thereof.  
Use of such information may require a license from a third party under the patents or other intellectual property  
of the third party, or a license from TI under the patents or other intellectual property of TI.  
Reproduction of information in TI data books or data sheets is permissible only if reproduction is without  
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Resale of TI products or services with statements different from or beyond the parameters stated by TI for that  
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Mailing Address:  
Texas Instruments  
Post Office Box 655303  
Dallas, Texas 75265  
Copyright 2003, Texas Instruments Incorporated  
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