Philips Stereo Amplifier TDA1562Q User Manual

INTEGRATED CIRCUITS  
DATA SHEET  
TDA1562Q; TDA1562ST;  
TDA1562SD  
70 W high efficiency power  
amplifier with diagnostic facility  
Preliminary specification  
2003 Feb 12  
Supersedes data of 1998 Apr 07  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
SYMBOL  
SVRR  
PARAMETER  
CONDITIONS  
on and mute  
MIN.  
55  
TYP.  
63  
MAX.  
UNIT  
dB  
supply voltage ripple rejection  
common mode rejection ratio  
input signal rejection ratio  
noise output voltage  
150  
CMRR  
ISRR  
Vn(o)  
on  
56  
80  
80  
dB  
dB  
µV  
mute  
on  
100  
100  
Note  
1. When operating at VP > 16 V, the output power must be limited to 85 W at THD = 10% (or minimum load is 6 ).  
ORDERING INFORMATION  
PACKAGE  
TYPE NUMBER  
NAME  
DESCRIPTION  
VERSION  
TDA1562Q  
DBS17P  
DBS17P  
plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)  
plastic DIL-bent-SIL power package; 17 leads (lead length 7.7 mm)  
SOT243-1  
SOT243-3  
SOT577-2  
TDA1562Q/S10  
TDA1562ST  
RDBS17P plastic rectangular-DIL-bent-SIL power package; 17 leads (row  
spacing 2.54 mm)  
TDA1562SD  
RDBS17P plastic rectangular-DIL-bent-SIL (reverse bent) power package;  
17 leads (row spacing 2.54 mm)  
SOT668-2  
2003 Feb 12  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
BLOCK DIAGRAM  
V
V
C1−  
3
C1+  
5
P1  
9
P2  
10  
CLASS-B  
CLASS-H  
FAST MUTE  
16  
4
LOAD DUMP  
PROTECTION  
TEMPERATURE  
SENSOR  
STAT  
disable  
CURRENT  
PROTECTION  
STANDBY  
MUTE  
ON  
MODE  
LIFT-SUPPLY  
V *  
P
TDA1562  
1
+
IN+  
7
POWER-  
PREAMP  
OUT+  
STAGE  
75  
DIAGNOSTIC  
INTERFACE  
kΩ  
FEEDBACK  
CIRCUIT  
LOAD  
DETECTOR  
DYNAMIC  
DISTORTION  
DETECTOR  
8
DIAG  
75  
kΩ  
11  
POWER-  
STAGE  
PREAMP  
+
OUT−  
2
IN−  
V *  
P
14  
V
ref  
TEMPERATURE  
PROTECTION  
LIFT-SUPPLY  
15 kΩ  
disable  
reference  
voltage  
17  
SGND  
MGL264  
15  
13  
6
12  
PGND2  
PGND1  
C2−  
C2+  
Fig.1 Block diagram.  
2003 Feb 12  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
PINNING  
SYMBOL  
PIN  
DESCRIPTION  
signal input (positive)  
handbook, halfpage  
IN+  
1
2
3
IN+  
IN−  
1
2
IN−  
C1−  
signal input (negative)  
negative terminal of lift electrolytic  
capacitor 1  
C1−  
3
MODE  
C1+  
4
MODE  
C1+  
4
5
mode select input  
positive terminal of lift electrolytic  
capacitor 1  
5
PGND1  
OUT+  
DIAG  
6
PGND1  
OUT+  
DIAG  
VP1  
6
7
power ground 1  
7
positive output  
8
8
diagnostic output (open-collector)  
supply voltage 1  
TDA1562Q  
TDA1562ST  
TDA1562SD  
V
9
9
P1  
VP2  
10  
11  
12  
13  
supply voltage 2  
V
10  
P2  
OUT−  
PGND2  
C2+  
negative output  
OUT11  
PGND2 12  
C2+ 13  
power ground 2  
positive terminal of lift electrolytic  
capacitor 2  
V
14  
ref  
Vref  
14  
15  
internal reference voltage  
C215  
STAT 16  
SGND 17  
C2−  
negative terminal of lift electrolytic  
capacitor 2  
STAT  
16  
17  
status I/O  
SGND  
signal ground  
MGL263  
Fig.2 Pin configuration.  
2003 Feb 12  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
FUNCTIONAL DESCRIPTION  
Status I/O (pin STAT)  
The TDA1562 contains a mono class-H BTL output power  
amplifier. At low output power, up to 18 W, the device  
operates as a normal BTL amplifier. When a larger output  
voltage swing is required, the internal supply voltage is  
lifted by means of the external electrolytic capacitors. Due  
to this momentarily higher supply voltage the obtainable  
output power is 70 W.  
INPUT  
This input has 3 possibilities:  
1. LOW for fast mute: the circuit remains switched on, but  
the input signal is suppressed  
2. MID for class-B: the circuit operates as class-B  
amplifier, the high power supply voltage is disabled,  
independent of the case temperature  
In normal use, when the output is driven with music-like  
signals, the high output power is only needed during a  
small percentage of time. Under the assumption that a  
music signal has a normal (Gaussian) amplitude  
distribution, the reduction in dissipation is about 50% when  
compared to a class-B output amplifier with the same  
output power. The heatsink should be designed for use  
with music signals. If the case temperature exceeds  
120 °C the device will switch back from class-H to class-B  
operation. The high power supply voltage is then disabled  
and the output power is limited to 20 W.  
3. HIGH for class-H: the circuit operates as class-H  
amplifier, the high power supply voltage is enabled,  
independent of the case temperature.  
When the circuit is switched from fast mute to class-B/H or  
vice versa the switching is immediately carried out. When  
the circuit is switched from class-B to class-H or vice versa  
the actual switching takes place at a zero crossing of the  
input signal.  
OUTPUT  
When the supply voltage drops below the minimum  
operating level, the amplifier will be muted immediately.  
This output has 3 possibilities:  
1. LOW for mute: acknowledge of muted amplifier  
Mode select input (pin MODE)  
2. MID for class-B: the circuit operates as class-B  
amplifier, the high power supply voltage is disabled,  
caused by the case temperature Tc > 120 °C  
This pin has 3 modes:  
1. LOW for standby: the complete circuit is switched off,  
the supply current is very low  
3. HIGH for class-H: the circuit operates as class-H  
amplifier, the high power supply voltage is enabled,  
because the case temperature Tc < 120 °C.  
2. MID for mute: the circuit is switched on, but the input  
signal is suppressed  
When the circuit is switched from class-B to class-H or vice  
versa the actual switching takes place at a zero crossing  
of the input signal.  
3. HIGH for on: normal operation, the input signal is  
amplified by 26 dB.  
When the circuit is switched from mute to on or vice versa  
the actual switching takes place at a zero crossing of the  
input signal. The circuit contains a quick start option, i.e.  
when it is switched directly from standby to on, the  
amplifier is fully operational within 50 ms (important for  
applications like car telephony and car navigation).  
The status I/O pins of maximum 8 devices may be tied  
together for synchronizing purposes.  
2003 Feb 12  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
on  
supply  
mute  
voltage  
0
HIGH  
mode select  
MID  
input  
LOW  
V
ref  
VRT  
reference  
voltage  
0
HIGH  
status I/O  
input  
MID  
LOW  
HIGH  
class-H (T < 120 °C)  
status I/O  
output  
c
MID  
class-B (T > 120 °C)  
c
LOW  
output voltage  
across load  
0
zero crossing mute  
function  
zero crossing change  
class-B/H operation  
fast mute  
function  
supply mute  
function  
quick start  
mute  
MGL272  
Fig.3 Switching characteristics.  
2003 Feb 12  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
Diagnostic output (pin DIAG)  
TEMPERATURE DETECTION  
DYNAMIC DISTORTION DETECTOR (DDD)  
Just before the temperature protection becomes active the  
diagnostic output becomes continuously LOW.  
At the onset of clipping of the output stages, the DDD  
becomes active. This information can be used to drive a  
sound processor or DC-volume control to attenuate the  
input signal and so limit the distortion.  
LOAD DETECTION  
Directly after the circuit is switched from standby to mute  
or on, a built-in detection circuit checks whether a load is  
present. The results of this check can be detected at the  
diagnostic output, by switching the mode select input in the  
mute mode.  
SHORT-CIRCUIT PROTECTION  
When a short-circuit occurs at the outputs to ground or to  
the supply voltage, the output stages are switched off.  
They will be switched on again approximately 20 ms after  
removing the short-circuit. During this short-circuit  
condition the diagnostic output is continuously LOW.  
Since the diagnostic output is an open-collector output,  
more devices can be connected.  
When a short-circuit occurs across the load, the output  
stages are switched off during approximately 20 ms. After  
that time is checked during approximately 50 µs whether  
the short-circuit is still present. During this short-circuit  
condition the diagnostic output is LOW for 20 ms and  
HIGH for 50 µs. The power dissipation in any short-circuit  
condition is very low.  
HIGH  
mode select  
MID  
input  
LOW  
output voltage  
across load  
0
HIGH  
diagnostic  
output  
no load  
LOW  
t
short-circuit to  
supply or ground  
short-circuit  
across load  
clipping signal  
MGL265  
Fig.4 Diagnostic information.  
8
2003 Feb 12  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
status I/O: high  
status I/O: open  
class-H  
maximum output  
voltage swing  
class-B  
0
HIGH  
diagnostic  
output  
LOW  
HIGH  
status I/O  
MID  
output  
LOW  
100  
120  
145  
150  
160  
T (°C)  
j
MGL266  
Fig.5 Behaviour as a function of temperature.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL PARAMETER CONDITIONS  
VP supply voltage operating; note 1  
MIN.  
MAX.  
18  
UNIT  
V
V
V
A
A
V
non-operating  
30  
45  
10  
8
load dump; tr > 2.5 ms; t = 50 ms  
IOSM  
IORM  
Vsc  
non-repetitive peak output current  
repetitive peak output current  
short-circuit safe voltage  
storage temperature  
18  
+150  
150  
60  
Tstg  
Tamb  
Tj  
55  
40  
°C  
°C  
°C  
W
ambient temperature  
junction temperature  
note 2  
Ptot  
total power dissipation  
Notes  
1. When operating at VP > 16 V, the output power must be limited to 85 W at THD = 10% (or minimum load is 6 ).  
2. Tj is a theoretical temperature which is based on a simplified representation of the thermal behaviour of the device.  
Tj = Tc + P ×Rth(j-c), where Rth(j-c) is a fixed value to be used for the calculation of Tj. The rating for Tj limits the  
allowable combinations of power dissipation P and case temperature Tc (in accordance with IEC 60747-1).  
2003 Feb 12  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
QUALITY SPECIFICATION  
Quality in accordance with “SNW-FQ-611D”, if this type is used as an audio amplifier.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to case  
thermal resistance from junction to ambient  
CONDITIONS  
VALUE  
1.5  
UNIT  
K/W  
K/W  
Rth(j-c)  
Rth(j-a)  
in free air  
40  
DC CHARACTERISTICS  
VP = 14.4 V; RL = 4 ; Tamb = 25 °C; measurements in accordance with Fig.9; unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Supplies VP1 and VP2  
VP  
supply voltage  
8
7
7
14.4  
18  
V
V
V
VP(th+)  
VP(th)  
VP(H1)  
Iq  
supply threshold voltage  
supply threshold voltage  
mute on  
on mute  
200  
110  
9
9
hysteresis (Vth+ Vth−  
quiescent current  
)
150  
mV  
mA  
on and mute;  
RL = open circuit  
Istb  
standby current  
standby  
3
50  
µA  
Amplifier outputs OUT+ and OUT−  
VO  
VOO  
VOO  
output voltage  
on and mute  
on and mute  
on mute  
6.5  
100  
30  
V
output offset voltage  
delta output offset voltage  
mV  
mV  
Mode select input MODE  
VI  
input voltage  
0
1
15  
200  
VP  
20  
2.2  
2
V
II  
input current  
VMODE = 14.4 V  
standby mute  
mute standby  
µA  
V
Vth1+  
Vth1−  
VmsH1  
Vth2+  
Vth2−  
VmsH2  
threshold voltage 1+  
threshold voltage 1−  
hysteresis (Vth1+ Vth1−  
threshold voltage 2+  
threshold voltage 2−  
0.9  
3.3  
3.3  
V
)
4.2  
4
mV  
V
mute on  
on mute  
200  
V
hysteresis (Vth2+ Vth2−  
)
mV  
Status I/O STAT  
PIN STAT AS INPUT  
Vst  
input voltage  
0
VP  
4.5  
400  
2
V
Ist(H)  
Ist(L)  
Vth1+  
Vth1−  
VstH1  
HIGH-level input current  
LOW-level input current  
threshold voltage 1+  
threshold voltage 1−  
VSTAT = 14.4 V  
VSTAT = 0 V  
3.5  
350  
200  
mA  
µA  
V
fast mute class-B  
class-B fast mute 1  
V
hysteresis (Vth1+ Vth1−  
)
mV  
2003 Feb 12  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
SYMBOL  
PARAMETER  
threshold voltage 2+  
threshold voltage 2−  
hysteresis (Vth2+ Vth1−  
CONDITIONS  
MIN.  
TYP.  
MAX.  
4.2  
UNIT  
Vth2+  
Vth2−  
VstH2  
class-B class-H  
class-H class-B  
V
V
3.3  
)
200  
mV  
PIN STAT AS OUTPUT  
Ist(mute)  
Vst(mute)  
Ist(clB)  
mute acknowledge sink current  
2.2  
0.5  
3.0  
mA  
V
mute acknowledge output voltage  
class-B operation output current  
class-B operation output voltage  
class-H operation source current  
class-H operation output voltage  
threshold case temperature sensor  
Ist = 2.2 mA  
Ist = 15 µA  
15  
µA  
V
Vst(clB)  
Ist(clH)  
Vst(clH)  
Tc(th)  
Diagnostic output DIAG  
2.0  
140  
VP 2.5  
µA  
V
Ist = 140 µA  
120  
°C  
VDIAG  
RL  
output voltage  
active LOW  
100  
0.6  
V
load resistance for open load detection  
threshold junction temperature sensor  
°C  
Tj(th)  
145  
on  
fast mute  
V
V
P
PH1  
V
V
th−  
th+  
MGL267  
Fig.6 Supply voltage transfer characteristic.  
2003 Feb 12  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
on  
mute  
standby  
V
V
msH2  
msH1  
V
ms  
V
V
V
V
th2−  
th2+  
th1−  
th1+  
MGL268  
Fig.7 Mode select transfer characteristic.  
class-H  
class-B  
fast mute  
V
V
stH1  
stH2  
V
st  
V
V
V
V
th2−  
th2+  
th1−  
th1+  
MGL269  
Fig.8 Status I/O transfer characteristic.  
12  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
AC CHARACTERISTICS  
VP = 14.4 V; RL = 4 ; Rs = 0 ; f = 1 kHz; Tamb = 25 °C; measurements in accordance with Fig.9; unless otherwise  
specified.  
SYMBOL  
Po  
PARAMETER  
output power  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
class-B; THD = 10%  
class-H; THD = 10%  
class-H; THD = 0.5%  
16  
60  
45  
19  
70  
55  
20  
W
W
W
fro(h)(P)  
THD  
high frequency power roll-off Po (1 dB); THD = 0.5%;  
kHz  
note 1  
total harmonic distortion  
Po = 1 W  
25  
20  
90  
55  
0.03  
0.06  
2.1  
26  
%
Po = 20 W  
DDD active  
%
%
Gv  
voltage gain  
27  
210  
dB  
kHz  
kΩ  
dB  
dB  
dB  
fro(h)(G)  
Zi(dif)  
SVRR  
high frequency gain roll-off  
differential input impedance  
Gv (1 dB); note 2  
150  
63  
supply voltage ripple  
rejection  
on and mute; note 3  
standby; note 3  
on; note 4  
90  
CMRR  
common mode rejection  
ratio  
56  
80  
ISRR  
Vn(o)  
input signal rejection ratio  
noise output voltage  
mute; note 5  
80  
100  
100  
60  
150  
dB  
µV  
µV  
on; note 6  
mute; notes 6 and 7  
Notes  
1. The low frequency power roll-off is determined by the value of the electrolytic lift capacitors.  
2. The low frequency gain roll-off is determined by the value of the input coupling capacitors.  
3. Supply voltage ripple rejection is measured across RL; ripple voltage Vripple(max) = 2 V (p-p).  
4. Common mode rejection ratio is measured across RL; common mode voltage Vcm(max) = 2 V (p-p).  
CMMR (dB) = differential gain (Gv) + common mode attenuation (αcm). Test set-up according to Fig.10; mismatch of  
input coupling capacitors excluded.  
5. Input signal rejection ratio is measured across RL; input voltage Vi(max) = 2 V (p-p). ISSR (dB) = different gain  
(Gv) + mute attenuation (αm).  
6. Noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz.  
7. Noise output voltage is independent of source impedance Rs.  
2003 Feb 12  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
TEST AND APPLICATION INFORMATION  
+V  
P
2200  
µF  
100  
nF  
4700 µF  
V
V
C1−  
C1+  
P1  
P2  
10  
3
5
9
CLASS-B  
CLASS-H  
FAST MUTE  
16  
4
LOAD DUMP  
PROTECTION  
TEMPERATURE  
SENSOR  
STAT  
disable  
CURRENT  
PROTECTION  
STANDBY  
MUTE  
ON  
MODE  
LIFT-SUPPLY  
V *  
P
TDA1562  
100 nF  
1
+
7
PRE-  
AMP  
IN+  
POWER-  
STAGE  
OUT+  
+ V  
1/2*R  
s
75  
kΩ  
P
DIAGNOSTIC  
INTERFACE  
10  
kΩ  
R
=
audio  
source  
FEEDBACK  
CIRCUIT  
LOAD  
DETECTOR  
L
DYNAMIC  
DISTORTION  
DETECTOR  
8
4 Ω  
DIAG  
75  
kΩ  
1/2*R  
s
11  
PRE-  
POWER-  
STAGE  
100 nF  
2
AMP  
OUT−  
+
IN−  
V *  
10 µF  
P
14  
V
TEMPERATURE  
PROTECTION  
ref  
LIFT-SUPPLY  
15 kΩ  
disable  
reference  
voltage  
17  
SGND  
15  
13  
C2+  
6
12  
PGND2  
C2−  
PGND1  
4700 µF  
GND  
MGL271  
nbko,fulgpaewidht  
Fig.9 Test and application circuit.  
14  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
+ V  
P
9
10  
supply  
C
i
1
7
R
TDA1562  
L
C
i
11  
2
14  
V
CM  
SGND  
17  
PGND1 PGND2  
12  
6
GND  
MGL270  
Fig.10 CMRR test set-up.  
2003 Feb 12  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
PACKAGE OUTLINES  
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)  
SOT243-1  
non-concave  
D
h
x
D
E
h
view B: mounting base side  
d
A
2
B
j
E
A
L
3
L
Q
c
2
v
M
1
17  
e
e
m
w
M
1
Z
b
p
e
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
(1)  
(1)  
UNIT  
A
A
b
c
D
d
D
E
e
e
e
E
j
L
L
3
m
Q
v
w
x
Z
2
p
h
1
2
h
17.0 4.6 0.75 0.48 24.0 20.0  
15.5 4.4 0.60 0.38 23.6 19.6  
12.2  
11.8  
3.4 12.4 2.4  
3.1 11.0 1.6  
2.00  
1.45  
2.1  
1.8  
6
mm  
10  
2.54 1.27 5.08  
0.8  
4.3  
0.4 0.03  
Note  
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
97-12-16  
99-12-17  
SOT243-1  
2003 Feb 12  
16  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads  
(row spacing 2.54 mm)  
SOT577-2  
non-concave  
D
h
x
D
E
h
view B: mounting base side  
d
A
2
B
j
E
A
L
Q
c
e
2
1
Z
17  
w
e
M
1
M
v
L
1
b
p
e
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
(1)  
(1)  
UNIT  
A
A
b
c
D
d
D
E
e
e
1
e
E
h
j
L
L
1
Q
v
w
x
Z
2
p
h
2
4.6 0.75 0.48 24.0 20.0  
4.4 0.60 0.38 23.6 19.6  
12.2  
11.8  
3.4 3.75 3.75  
3.1 3.15 3.15  
2.00  
1.45  
2.1  
1.8  
6
mm  
10  
2.54 1.27 2.54  
13.5  
0.6  
0.4  
0.03  
Note  
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
SOT577-2  
01-01-05  
2003 Feb 12  
17  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads  
(row spacing 2.54 mm)  
SOT577-2  
non-concave  
D
h
x
D
E
h
view B: mounting base side  
d
A
2
B
j
E
A
L
Q
c
e
2
1
Z
17  
w
e
M
1
M
v
L
1
b
p
e
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
(1)  
(1)  
UNIT  
A
A
b
c
D
d
D
E
e
e
1
e
E
h
j
L
L
1
Q
v
w
x
Z
2
p
h
2
4.6 0.75 0.48 24.0 20.0  
4.4 0.60 0.38 23.6 19.6  
12.2  
11.8  
3.4 3.75 3.75  
3.1 3.15 3.15  
2.00  
1.45  
2.1  
1.8  
6
mm  
10  
2.54 1.27 2.54  
13.5  
0.6  
0.4  
0.03  
Note  
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
SOT577-2  
01-01-05  
2003 Feb 12  
18  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
RDBS17P: plastic rectangular-DIL-bent-SIL (reverse bent) power package; 17 leads  
(row spacing 2.54 mm)  
SOT668-2  
non-concave  
D
h
x
D
E
h
view B: mounting base side  
d
A
2
B
j
E
A
Q
L
c
e
2
1
17  
w
e
M
1
Z
L
1
v
M
b
p
e
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
(1)  
(1)  
UNIT  
A
A
b
c
D
d
D
E
e
e
e
E
j
L
L
Q
v
w
x
Z
2
p
h
1
2
h
1
4.6 0.75 0.48 24.0 20.0  
4.4 0.60 0.38 23.6 19.6  
12.2  
11.8  
3.4 3.75 3.75  
3.1 3.15 3.15  
2.00  
1.45  
2.1  
1.9  
6
mm  
10  
2.54 1.27 2.54  
13.5  
0.6  
0.4  
0.03  
Note  
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
SOT668-2  
01-01-05  
2003 Feb 12  
19  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
SOLDERING  
The total contact time of successive solder waves must not  
exceed 5 seconds.  
Introduction to soldering through-hole mount  
packages  
The device may be mounted up to the seating plane, but  
the temperature of the plastic body must not exceed the  
specified maximum storage temperature (Tstg(max)). If the  
printed-circuit board has been pre-heated, forced cooling  
may be necessary immediately after soldering to keep the  
temperature within the permissible limit.  
This text gives a brief insight to wave, dip and manual  
soldering. A more in-depth account of soldering ICs can be  
found in our “Data Handbook IC26; Integrated Circuit  
Packages” (document order number 9398 652 90011).  
Wave soldering is the preferred method for mounting of  
through-hole mount IC packages on a printed-circuit  
board.  
Manual soldering  
Apply the soldering iron (24 V or less) to the lead(s) of the  
package, either below the seating plane or not more than  
2 mm above it. If the temperature of the soldering iron bit  
is less than 300 °C it may remain in contact for up to  
10 seconds. If the bit temperature is between  
Soldering by dipping or by solder wave  
The maximum permissible temperature of the solder is  
260 °C; solder at this temperature must not be in contact  
with the joints for more than 5 seconds.  
300 and 400 °C, contact may be up to 5 seconds.  
Suitability of through-hole mount IC packages for dipping and wave soldering methods  
SOLDERING METHOD  
PACKAGE  
DIPPING  
WAVE  
DBS, DIP, HDIP, SDIP, SIL  
suitable  
suitable(1)  
Note  
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.  
2003 Feb 12  
20  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2003 Feb 12  
21  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
NOTES  
2003 Feb 12  
22  
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Philips Semiconductors  
Preliminary specification  
70 W high efficiency power amplifier  
with diagnostic facility  
TDA1562Q; TDA1562ST;  
TDA1562SD  
NOTES  
2003 Feb 12  
23  
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Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: [email protected].  
© Koninklijke Philips Electronics N.V. 2003  
SCA75  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
753503/02/pp24  
Date of release: 2003 Feb 12  
Document order number: 9397 750 09939  
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