INTEGRATED CIRCUITS
DATA SHEET
TDA1519C
22 W BTL or 2 × 11 W
stereo power amplifier
Product specification
2004 Jan 28
Supersedes data of 2001 Aug 24
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
QUICK REFERENCE DATA
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
VP
supply voltage
operating
6.0
14.4
−
−
17.5
30
V
non-operating
−
−
−
−
−
−
V
load dump protected
45
V
IORM
Iq(tot)
Istb
repetitive peak output current
total quiescent current
standby current
−
4
A
40
0.1
−
80
mA
µA
µA
100
40
Isw(on)
switch-on current
Inputs
Zi
input impedance
BTL
25
50
−
−
−
−
kΩ
kΩ
stereo
Stereo application
Po
output power
THD = 10 %
RL = 4 Ω
−
−
40
−
6
−
−
−
−
W
RL = 2 Ω
11
−
W
αcs
channel separation
dB
µV
Vn(o)(rms)
noise output voltage (RMS value)
150
BTL application
Po
output power
THD = 10 %; RL = 4 Ω
RS = 0 Ω
−
22
−
W
SVRR
supply voltage ripple rejection
fi = 100 Hz
34
48
−
−
−
−
−
−
−
250
150
dB
dB
mV
°C
fi = 1 to 10 kHz
∆VOO
Tj
DC output offset voltage
junction temperature
−
2004 Jan 28
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
BLOCK DIAGRAM
mute switch
1
NINV
C
m
60
kΩ
VA
4
OUT1
183
Ω
power stage
18.1 kΩ
V
P
8
M/SS
+
−
standby
switch
standby
reference
voltage
VA
15 kΩ
× 1
+
mute
switch
+
−
3
RR
15 kΩ
mute
reference
voltage
TDA1519C
TDA1519CSP
18.1 kΩ
power stage
183
Ω
6
OUT2
VA
9
INV
C
m
60
kΩ
mute switch
input
reference
voltage
power
ground
(substrate)
signal
ground
2
7
5
MGL491
GND1
V
GND2
P
The pin numbers refer to the TDA1519C and TDA1519CSP only, for TDA1519CTD and TDA1519CTH see Figs 3 and 4.
Fig.1 Block diagram.
2004 Jan 28
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
PINNING
PIN
SYMBOL
DESCRIPTION
TDA1519C;
TDA1519CSP
TDA1519CTD
TDA1519CTH
NINV
GND1
RR
1
2
3
4
5
6
7
8
9
−
19
20
1
19
20
1
non-inverting input
ground 1 (signal)
supply voltage ripple rejection
output 1
OUT1
GND2
OUT2
VP
3
3
5
5
ground 2 (substrate)
output 2
8
8
10
11
12
10
11
12
positive supply voltage
mute/standby switch input
inverting input
M/SS
INV
n.c.
2, 4, 6, 7, 9 and 13 to 18 2, 4, 6, 7, 9 and 13 to 18 not connected
halfpage
page
20 GND1
19
1
2
3
4
5
6
7
8
9
1
2
NINV
RR
n.c.
GND1 20
NINV 19
n.c. 18
n.c. 17
n.c. 16
n.c. 15
n.c. 14
n.c. 13
INV 12
M/SS 11
1
2
RR
NINV
18 n.c.
17
GND1
RR
n.c.
3
OUT1
n.c.
3
OUT1
n.c.
n.c.
4
OUT1
GND2
OUT2
4
TDA1519C
TDA1519CSP
5
GND2
n.c.
16 n.c.
15 n.c.
GND2
n.c.
5
TDA1519CTH
6
TDA1519CTD
6
7
n.c.
8
OUT2
n.c.
n.c.
n.c.
14
V
P
7
9
8
13 n.c.
OUT2
n.c.
M/SS
INV
10
V
P
INV
9
12
11
001aaa348
MGR561
M/SS
V
P
10
MGL937
Fig.2 Pin configuration
TDA1519C and
Fig.3 Pin configuration
TDA1519CTD.
Fig.4 Pin configuration
TDA1519CTH.
TDA1519CSP.
2004 Jan 28
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
FUNCTIONAL DESCRIPTION
• Low standby current (<100 µA)
• Low mute/standby switching current (allows for low-cost
The TDA1519C contains two identical amplifiers with
differential input stages. The gain of each amplifier is fixed
at 40 dB. A special feature of this device is the
supply switch)
• Mute condition.
mute/standby switch which has the following features:
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
supply voltage
CONDITIONS
operating
MIN.
MAX.
17.5
UNIT
VP
−
−
−
V
V
V
non-operating
30
45
load dump protected;
during 50 ms; tr ≥ 2.5 ms
Vsc
Vrp
Eo
AC and DC short-circuit-safe voltage
reverse polarity voltage
−
−
−
−
−
−
−
17.5
6
V
V
energy handling capability at outputs
non-repetitive peak output current
repetitive peak output current
total power dissipation
VP = 0 V
see Fig.5
200
6
mJ
A
IOSM
IORM
Ptot
Tj
4
A
25
W
°C
°C
junction temperature
150
+150
Tstg
storage temperature
−55
MGL492
30
handbook, halfpage
(1)
P
tot
(W)
20
(2)
(3)
10
0
−25
0
50
100
150
(°C)
T
amb
(1) Infinite heatsink.
(2) Rth(c-a) = 5 K/W.
(3) Rth(c-a) = 13 K/W.
Fig.5 Power derating curve for TDA1519C.
2004 Jan 28
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient;
TDA1519C, TDA1519CTH and TDA1519CTD
40
K/W
Rth(j-c)
thermal resistance from junction to case;
3
K/W
TDA1519C, TDA1519CTH and TDA1519CTD
DC CHARACTERISTICS
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
VP
supply voltage
note 1
note 2
6.0
14.4
40
17.5
80
V
Iq(tot)
VO
total quiescent current
DC output voltage
−
−
−
mA
V
6.95
−
−
250
∆VOO
DC output offset voltage
mV
Mute/standby switch
Vsw(on)
Vmute
Vstb
switch-on voltage level
8.5
3.3
0
−
−
−
−
6.4
2
V
V
V
mute voltage level
standby voltage level
Mute/standby condition
Vo
output voltage
mute mode; Vi = 1 V (maximum);
fi = 20 Hz to 15 kHz
−
−
20
mV
∆VOO
Istb
DC output offset voltage
standby current
mute mode
−
−
−
−
−
250
100
40
mV
µA
µA
standby mode
Isw(on)
switch-on current
12
Notes
1. The circuit is DC adjusted at VP = 6 to 17.5 V and AC operating at VP = 8.5 to 17.5 V.
2. At VP = 17.5 to 30 V, the DC output voltage is ≤0.5VP.
2004 Jan 28
7
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
AC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Stereo application (see Fig.6)
Po
output power
note 1
THD = 0.5 %
THD = 10 %
THD = 0.5 %
THD = 10 %
Po = 1 W
4
5
−
−
W
5.5
6.0
W
7.5
10
−
8.5
11
0.1
45
−
40
−
−
−
−
−
−
−
41
−
−
−
−
W
W
THD
fro(l)
total harmonic distortion
low frequency roll-off
%
−1 dB
−
Hz
kHz
dB
dB
dB
dB
dB
fro(h)
high frequency roll-off
20
39
40
45
45
80
Gv(cl)
SVRR
closed-loop voltage gain
supply voltage ripple rejection
−
−
standby; notes 3
and 6
Zi
input impedance
50
60
75
kΩ
Vn(o)(rms) noise output voltage (RMS value)
note 7
on; RS = 0 Ω
on; RS = 10 kΩ
mute; note 8
RS = 10 kΩ
−
−
−
40
−
150
250
120
−
−
500
−
−
1
µV
µV
µV
dB
dB
αcs
∆Gv(ub)
channel separation
channel unbalance
0.1
BTL application (see Fig.7)
Po
output power
note 1
THD = 0.5 %
THD = 10 %
THD = 0.5 %
THD = 10 %
Po = 1 W
15
20
17
22
−
−
W
W
−
−
−
−
13
−
−
−
−
W
W
%
17.5
THD
Bp
total harmonic distortion
power bandwidth
0.1
THD = 0.5 %;
35 to 15000
Hz
Po = −1 dB; with
respect to 15 W
fro(l)
low frequency roll-off
high frequency roll-off
closed-loop voltage gain
−1 dB
−
20
45
45
−
−
−
Hz
fro(h)
Gv(cl)
kHz
dB
46
47
2004 Jan 28
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
SYMBOL
PARAMETER
CONDITIONS
MIN.
34
TYP.
MAX.
UNIT
dB
SVRR
supply voltage ripple rejection
−
−
−
−
−
48
48
80
−
−
−
dB
dB
dB
standby;
Zi
input impedance
25
30
38
kΩ
Vn(o)(rms) noise output voltage (RMS value)
note 7
on; RS = 0 Ω
on; RS = 10 kΩ
mute; note 8
−
−
−
200
350
180
−
700
−
µV
µV
µV
Notes
1. Output power is measured directly at the output pins of the device.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0 Ω (maximum ripple amplitude of 2 V).
4. Frequency f = 100 Hz.
5. Frequency between 1 and 10 kHz.
6. Frequency between 100 Hz and 10 kHz.
7. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.
8. Noise output voltage independent of RS (Vi = 0 V).
2004 Jan 28
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
APPLICATION INFORMATION
standby switch
V
P
100 µF
2200
µF
100
nF
3
8
7
input
reference
voltage
internal
1/2 V
P
TDA1519C
−
+
60 kΩ
40 dB
+
40 dB
60 kΩ
220 nF
−
220 nF
1
9
non-inverting input
inverting input
2
5
4
6
MGL493
signal
power
ground ground
1000
µF
Fig.6 Stereo application diagram (TDA1519C).
standby switch
V
P
2200
µF
100
nF
3
8
7
input
reference
voltage
internal
1/2 V
P
TDA1519C
−
+
60 kΩ
40 dB
+
40 dB
60 kΩ
220 nF
−
1
9
non-inverting input
to pin 9
to pin 1
2
5
4
6
MGL494
signal
ground ground
power
R
= 4 Ω
L
Fig.7 BTL application diagram (TDA1519C).
10
2004 Jan 28
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
MGR539
60
handbook, halfpage
I
q(tot)
(mA)
50
40
30
0
4
8
12
16
20
V
(V)
P
Fig.8 Total quiescent current as a function of the supply voltage.
MGR540
30
handbook, halfpage
P
o
(W)
20
THD = 10%
10
0.5%
0
0
4
8
12
16
20
V
(V)
P
BTL application.
L = 4 Ω.
R
fi = 1 kHz.
Fig.9 Output power as a function of the supply voltage.
11
2004 Jan 28
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
MGR541
12
handbook, halfpage
THD
(%)
8
4
0
−1
2
10
1
10
10
P
(W)
o
BTL application.
RL = 4 Ω.
fi = 1 kHz.
Fig.10 Total harmonic distortion as a function of the output power.
MGU377
0.6
handbook, halfpage
THD
(%)
0.4
0.2
0
2
3
4
10
10
10
10
f (Hz)
i
BTL application.
RL = 4 Ω.
Po = 1 W.
Fig.11 Total harmonic distortion as a function of the operating frequency.
12
2004 Jan 28
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
PACKAGE OUTLINES
SIL9P: plastic single in-line power package; 9 leads
SOT131-2
non-concave
x
D
h
D
E
h
view B: mounting base side
d
A
2
B
E
j
A
1
b
L
c
1
9
e
Q
w
M
Z
b
p
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max.
b
max.
1
(1)
(1)
(1)
UNIT
A
b
c
D
d
D
E
e
E
j
L
Q
w
x
Z
2
p
h
h
4.6
4.4
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
12.2
11.8
3.4
3.1
17.2
16.5
2.00
1.45
2.1
1.8
6
mm
10
2.54
2
1.1
0.25
0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-17
03-03-12
SOT131-2
2004 Jan 28
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
SMS9P: plastic surface mounted single in-line power package; 9 leads
SOT354-1
D
y
d
non-concave
x
heatsink
A
D
2
h
heatsink
E
h
j
E
Q
A
1
L
L
p
c
9
1
θ
w
M
e
Z
b
p
(A )
3
A
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
A
A
b
c
D
d
D
E
e
E
h
L
L
p
Q
w
x
y
Z
θ
j
1
2
3
p
h
4.9 0.35 4.6
4.2 0.05 4.4
0.75 0.48 24.0 20.0
0.60 0.38 23.6 19.6
12.2
11.8
3.4
3.1
7.4
6.6
3.4
2.8
2.1
1.9
2.00
1.45
3°
0°
6
mm
10
2.54
0.25
0.25 0.03 0.15
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-17
03-03-12
SOT354-1
2004 Jan 28
14
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
HSOP20: plastic, heatsink small outline package; 20 leads
SOT397-1
E
A
D
E
2
X
c
y
H
v
M
A
E
D
1
D
2
11
20
Q
A
2
A
E
1
(A )
3
A
A
4
1
pin 1 index
θ
L
p
detail X
1
Z
10
w
M
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
E
A
A
A
A
b
c
D
D
D
E
E
e
H
L
p
Q
v
w
y
Z
θ
UNIT
1
2
3
4
p
1
2
1
2
E
max.
0.3
0.1
3.3
3.0
0.1 0.53 0.32 16.0 13.0 1.1 11.1 6.2
0.40 0.23 15.8 12.6 0.9 10.9 5.8
2.9
2.5
14.5 1.1 1.5
13.9 0.8 1.4
2.5
2.0
8°
0°
mm
1.27
3.6
0.35
0.25 0.25 0.1
0
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
03-02-18
03-07-23
SOT397-1
2004 Jan 28
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height
SOT418-3
E
A
D
x
X
c
y
E
H
2
v
M
A
E
D
1
D
2
10
1
pin 1 index
Q
A
A
2
(A )
3
E
1
A
4
θ
L
p
detail X
20
11
w
M
Z
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max.
(1)
(2)
(2)
A
A
A
b
c
D
D
D
E
E
1
E
e
H
E
L
p
Q
v
w
x
y
Z
θ
UNIT
2
3
4
p
1
2
2
8°
0°
+0.08 0.53 0.32
−0.04 0.40 0.23
16.0 13.0 1.1 11.1 6.2
15.8 12.6 0.9 10.9 5.8
2.9
2.5
14.5 1.1
13.9 0.8
1.7
1.5
2.5
2.0
3.5
3.2
mm
1.27
3.5
0.35
0.25 0.25 0.03 0.07
Notes
1. Limits per individual lead.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-02-12
03-07-23
SOT418-3
2004 Jan 28
16
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
SOLDERING
Introduction
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical reflow peak temperatures range from
215 to 270 °C depending on solder paste material. The
top-surface temperature of the packages should
preferably be kept:
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• below 225 °C (SnPb process) or below 245 °C (Pb-free
process)
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mount components are mixed on
one printed-circuit board. Wave soldering can still be used
for certain surface mount ICs, but it is not suitable for fine
pitch SMDs. In these situations reflow soldering is
recommended. Driven by legislation and environmental
forces the worldwide use of lead-free solder pastes is
increasing.
– for all the BGA, HTSSON..T and SSOP-T packages
– for packages with a thickness ≥ 2.5 mm
– for packages with a thickness < 2.5 mm and a
volume ≥ 350 mm3 so called thick/large packages.
• below 240 °C (SnPb process) or below 260 °C (Pb-free
process) for packages with a thickness < 2.5 mm and a
volume < 350 mm3 so called small/thin packages.
Through-hole mount packages
Moisture sensitivity precautions, as indicated on packing,
must be respected at all times.
SOLDERING BY DIPPING OR BY SOLDER WAVE
Typical dwell time of the leads in the wave ranges from
3 to 4 seconds at 250 °C or 265 °C, depending on solder
material applied, SnPb or Pb-free respectively.
WAVE SOLDERING
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
The total contact time of successive solder waves must not
exceed 5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
MANUAL SOLDERING
• For packages with leads on two sides and a pitch (e):
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
300 and 400 °C, contact may be up to 5 seconds.
Surface mount packages
The footprint must incorporate solder thieves at the
downstream end.
REFLOW SOLDERING
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.
Typical dwell time of the leads in the wave ranges from 3 to 4 seconds at 250 °C or 265 °C, depending on solder material
applied, SnPb or Pb-free respectively.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
MANUAL SOLDERING
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron
applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated
tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.
Suitability of IC packages for wave, reflow and dipping soldering methods
SOLDERING METHOD
MOUNTING
PACKAGE(1)
WAVE
Through-hole mount CPGA, HCPGA
suitable
−
suitable
DBS, DIP, HDIP, RDBS, SDIP, SIL
PMFP(4)
suitable(3)
−
−
−
Through-hole-
surface mount
not suitable
not suitable
Surface mount
not suitable
suitable
suitable
−
−
DHVQFN, HBCC, HBGA, HLQFP, HSO,
HSOP, HSQFP, HSSON, HTQFP, HTSSOP,
HVQFN, HVSON, SMS
not suitable(6)
suitable
suitable
−
−
−
−
LQFP, QFP, TQFP
not recommended(9)
SSOP, TSSOP, VSO, VSSOP
suitable
not suitable
not suitable
Notes
1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
3. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
4. Hot bar soldering or manual soldering is suitable for PMFP packages.
5. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account
be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature
exceeding 217 °C ± 10 °C measured in the atmosphere of the reflow oven. The package body peak temperature
must be kept as low as possible.
6. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
7. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
8. Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
9. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than
0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
10. Hot bar or manual soldering is suitable for PMFP packages.
11. Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted
on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar
soldering process. The appropriate soldering profile can be provided on request.
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Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W
stereo power amplifier
TDA1519C
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
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Philips Semiconductors – a worldwide company
Contact information
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R32/04/pp21
Date of release: 2004 Jan 28
Document order number: 9397 750 12599
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