Philips Stereo Amplifier SA5211 User Manual

SA5211  
Transimpedance amplifier (180 MHz)  
Rev. 03 — 07 October 1998  
Product specification  
1. Description  
2. Features  
The SA5211 is a 28 ktransimpedance, wide-band, low noise amplifier with  
differential outputs, particularly suitable for signal recovery in fiber optic receivers.  
The part is ideally suited for many other RF applications as a general purpose gain  
block.  
Extremely low noise: 1.8 pA / Hz  
Single 5 V supply  
Large bandwidth: 180 MHz  
Differential outputs  
Low input/output impedances  
High power supply rejection ratio  
28 kdifferential transresistance  
3. Applications  
c
c
Fiber optic receivers, analog and digital  
Current-to-voltage converters  
Wide-band gain block  
Medical and scientific Instrumentation  
Sensor preamplifiers  
Single-ended to differential conversion  
Low noise RF amplifiers  
RF signal processing  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
Table 3: Recommended operating conditions  
Symbol  
Parameter  
Conditions  
Min  
4.5  
-40  
-40  
Max  
5.5  
Unit  
V
VCC  
Tamb  
TJ  
supply voltage  
ambient temperature range  
junction temperature range  
+85  
+105  
°C  
°C  
7. Static characteristics  
Table 4: DC electrical characteristics  
Min and Max limits apply over operating temperature range at VCC = 5 V, unless otherwise specified. Typical data apply at  
VCC = 5 V and Tamb = 25 °C.  
Symbol  
VIN  
Parameter  
Test conditions  
Min  
0.55  
2.7  
Typ  
0.8  
3.4  
0
Max  
1.00  
3.7  
130  
31  
Unit  
V
input bias voltage  
output bias voltage  
output offset voltage  
supply current  
VO±  
VOS  
ICC  
V
mV  
mA  
mA  
µA  
20  
26  
4
IOMAX  
IIN  
output sink/source current[1]  
3
input current  
(2% linearity)  
Test Circuit 8,  
Procedure 2  
±20  
±40  
IIN MAX  
maximum input current  
overload threshold  
Test Circuit 8,  
Procedure 4  
±30  
±60  
µA  
[1] Test condition: output quiescent voltage variation is less than 100 mV for 3 mA load current.  
8. Dynamic characteristics  
Table 5: AC electrical characteristics  
Typical data and Min and Max limits apply at VCC = 5 V and Tamb = 25 °C  
Symbol Parameter  
Test conditions  
Min Typ Max Unit  
RT  
transresistance (differential output)  
DC tested RL = ∞  
21  
28  
36  
kΩ  
Test Circuit 8, Procedure 1  
RO  
RT  
output resistance (differential output)  
transresistance (single-ended output)  
DC tested  
30  
DC tested  
10.5 14  
18.0 kΩ  
RL = ∞  
RO  
output resistance (single-ended output)  
bandwidth (-3dB)  
DC tested  
15  
f3dB  
TA = 25°C  
180  
MHz  
Test circuit 1  
RIN  
input resistance  
200  
4
CIN  
input capacitance  
pF  
R/V  
R/T  
IN  
transresistance power supply sensitivity  
VCC = 5±0.5 V  
3.7  
%/V  
%/°C  
pA/Hz  
transresistance ambient temperature sensitivity Tamb = Tamb MAX-Tamb MIN  
0.025 −  
RMS noise current spectral density (referred to Test Circuit 2  
1.8  
input)  
f = 10 MHz  
TA = 25 °C  
IT  
integrated RMS noise current over the  
bandwidth (referred to input)  
TA = 25 °C  
Test Circuit 2  
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Product specification  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
Table 5: AC electrical characteristics…continued  
Typical data and Min and Max limits apply at VCC = 5 V and Tamb = 25 °C  
Symbol Parameter  
Test conditions  
Min Typ Max Unit  
In  
CS = 0[1]  
f = 50 MHz  
f = 100 MHz  
f = 200 MHz  
13  
20  
35  
nA  
nA  
dB  
dB  
dB  
In  
CS = 1pF  
f = 50 MHz  
f = 100 MHz  
f = 200 MHz  
13  
21  
41  
PSRR  
PSRR  
PSRR  
power supply rejection ratio[2]  
(VCC1 = VCC2  
DC tested, VCC = 0.1V  
Equivalent AC  
Test Circuit 3  
23  
23  
45  
32  
32  
65  
)
power supply rejection ratio[2] (VCC1  
)
)
DC tested, VCC = 0.1V  
Equivalent AC  
Test Circuit 4  
power supply rejection ratio[2] (VCC2  
DC tested, VCC = 0.1V  
Equivalent AC  
Test Circuit 5  
PSRR  
VOMAX  
VIN MAX  
tR  
power supply rejection ratio (ECL  
configuration)[2]  
f = 0.1 MHz  
Test Circuit 6  
23  
3.2  
dB  
maximum differential output voltage swing  
RL = ∞  
Test Circuit 8, Procedure 3  
1.7  
160  
VP-P  
mVP-P  
ns  
maximum input amplitude for output duty cycle  
of 50±5%[3]  
rise time for 50mV output signal[4]  
Test Circuit 7  
Test Circuit 7  
0.8  
1.8  
[1] Package parasitic capacitance amounts to about 0.2pF  
[2] PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF filter in VCC lines.  
[3] Guaranteed by linearity and overload tests.  
[4] tR defined as 20 to 80% rise time. It is guaranteed by -3dB bandwidth test.  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
9. Test circuits  
SINGLE-ENDED  
DIFFERENTIAL  
NETWORK ANALYZER  
V
V
V
OUT  
V
IN  
OUT  
R = 2 × S21 × R  
R
T
=
R = 4 × S21 × R  
R
T
IN  
S-PARAMETER TEST SET  
5V  
1 + S22  
– 33  
1 + S22  
– 66  
R
= 2Z  
O
O
R
Z
O
O
1 – S22  
1 – S22  
PORT 1  
PORT 2  
V
V
CC2  
CC1  
0.1µF  
Z
= 50  
= 50  
33  
O
OUT  
OUT  
0.1µF  
R = 1k  
Z
= 50  
O
IN DUT  
0.1µF  
33  
R
50  
L
GND  
GND  
1
2
Test Circuit 1  
SPECTRUM ANALYZER  
5V  
A
V
= 60DB  
V
V
CC2  
CC1  
0.1µF  
Z
= 50  
= 50  
O
33  
OUT  
OUT  
IN DUT  
NC  
0.1µF  
33  
R
L
GND  
GND  
1
2
Test Circuit 2  
SD00319  
Fig 2. Test circuits 1 and 2.  
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Product specification  
Rev. 03 — 07 October 1998  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
NETWORK ANALYZER  
5V  
S-PARAMETER TEST SET  
10µF  
0.1µF  
PORT 1  
PORT 2  
CURRENT PROBE  
1mV/mA  
10µF  
0.1µF  
16  
CAL  
V
V
CC1  
CC2  
0.1µF  
33  
33  
OUT  
50  
UNBAL.  
TEST  
100  
BAL.  
IN  
TRANSFORMER  
NH0300HB  
OUT  
0.1µF  
GND  
GND  
2
1
Test Circuit 3  
NETWORK ANALYZER  
5V  
S-PARAMETER TEST SET  
10µF  
0.1µF  
PORT 1  
PORT 2  
CURRENT PROBE  
1mV/mA  
10µF  
0.1µF  
16  
CAL  
5V  
V
V
10µF  
CC2  
CC1  
0.1µF  
33  
33  
OUT  
50  
0.1µF  
IN  
TEST  
100  
BAL.  
TRANSFORMER  
NH0300HB  
UNBAL.  
OUT  
0.1µF  
GND  
GND  
2
1
Test Circuit 4  
SD00320  
Fig 3. Test circuits 3 and 4.  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
NETWORK ANALYZER  
5V  
S-PARAMETER TEST SET  
10µF  
0.1µF  
PORT 1  
PORT 2  
CURRENT PROBE  
1mV/mA  
10µF  
0.1µF  
16  
CAL  
5V  
V
V
10µF  
CC1  
CC2  
0.1µF  
33  
33  
OUT  
50  
UNBAL.  
0.1µF  
TEST  
100  
BAL.  
IN  
TRANSFORMER  
NH0300HB  
OUT  
0.1µF  
GND  
GND  
2
1
Test Circuit 5  
NETWORK ANALYZER  
S-PARAMETER TEST SET  
GND  
PORT 1  
PORT 2  
CURRENT PROBE  
1mV/mA  
10µF  
0.1µF  
16  
CAL  
GND  
GND  
1
2
0.1µF  
33  
33  
OUT  
50  
TEST  
100  
BAL.  
IN  
TRANSFORMER  
NH0300HB  
UNBAL.  
OUT  
V
0.1µF  
V
CC1  
CC2  
5.2V  
10µF  
0.1µF  
Test Circuit 6  
SD00321  
Fig 4. Test circuits 5 and 6.  
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Product specification  
Rev. 03 — 07 October 1998  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
PULSE GEN.  
V
V
CC2  
CC1  
0.1µF  
33  
33  
OUT  
OUT  
A
B
Z
= 50Ω  
0.1µF  
IN  
O
1k  
DUT  
OSCILLOSCOPE  
= 50Ω  
Z
O
0.1µF  
50  
Measurement done using  
differential wave forms  
GND  
GND  
2
1
Test Circuit 7  
SD00322  
Fig 5. Test circuit 7.  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
Typical Differential Output Voltage  
vs Current Input  
5V  
+
OUT +  
V
(V)  
OUT  
IN  
DUT  
OUT –  
I
(µA)  
IN  
GND  
GND  
2
1
2.00  
1.60  
1.20  
0.80  
0.40  
0.00  
–0.40  
–0.80  
–1.20  
–1.60  
–2.00  
–100  
–80  
–60  
–40  
–20  
0
20  
40  
60  
80  
100  
CURRENT INPUT (µA)  
NE5211 TEST CONDITIONS  
Procedure 1  
R
R
measured at 15µA  
T
= (V – V )/(+15µA – (–15µA))  
O1 O2  
T
Where: V Measured at I = +15µA  
O1  
IN  
V
Measured at I = –15µA  
O2  
IN  
Procedure 2  
Linearity = 1 – ABS((V – V ) / (V – V ))  
OA OB O3 O4  
Where: V Measured at I = +30µA  
O3  
IN  
V
Measured at I = –30µA  
O4  
IN  
V
= R × (+ 30µA) + V  
OA  
OB  
T
OB  
V
= R × (– 30µA) + V  
T
OB  
Procedure 3  
Procedure 4  
V
= V – V  
O7  
OMAX  
O8  
Where: V Measured at I = +65µA  
O7  
IN  
V
Measured at I = –65µA  
O8  
IN  
I
IN  
Test Pass Conditions:  
V
– V > 20mV and V – V > 50mV  
O5 06 O5  
O7  
Where: V Measured at I = +40µA  
O5  
IN  
V
Measured at I = –400µA  
O6  
O7  
O8  
IN  
V
V
Measured at I = +65µA  
IN  
Measured at I = –65µA  
IN  
SD00331  
Test Circuit 8  
Fig 6. Test circuit 8.  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
10. Typical performance characteristics  
Fig 7. Typical performance characteristics.  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
Fig 8. Typical performance characteristics. (cont.)  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
Fig 9. Typical performance characteristics. (cont.)  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
Fig 10. Typical performance characteristics. (cont.)  
11. Theory of operation  
Transimpedance amplifiers have been widely used as the preamplifier in fiber-optic  
receivers. The SA5211 is a wide bandwidth (typically 180 MHz) transimpedance  
amplifier designed primarily for input currents requiring a large dynamic range, such  
as those produced by a laser diode. The maximum input current before output stage  
clipping occurs at typically 50µA. The SA5211 is a bipolar transimpedance amplifier  
which is current driven at the input and generates a differential voltage signal at the  
outputs. The forward transfer function is therefore a ratio of the differential output  
voltage to a given input current with the dimensions of ohms. The main feature of this  
amplifier is a wideband, low-noise input stage which is desensitized to photodiode  
capacitance variations. When connected to a photodiode of a few picoFarads, the  
frequency response will not be degraded significantly. Except for the input stage, the  
entire signal path is differential to provide improved power-supply rejection and ease  
of interface to ECL type circuitry. A block diagram of the circuit is shown in Figure 11.  
The input stage (A1) employs shunt-series feedback to stabilize the current gain of  
the amplifier. The transresistance of the amplifier from the current source to the  
emitter of Q3 is approximately the value of the feedback resistor, RF = 14.4 k. The  
gain from the second stage (A2) and emitter followers (A3 and A4) is about two.  
Therefore, the differential transresistance of the entire amplifier, RT is  
VOUT(diff)  
RT = ----------------------------- = 2 RF = 2(14.4 K) = 28.8 kΩ  
(1)  
IIN  
The simplified schematic in Figure 12 shows how an input current is converted to a  
differential output voltage. The amplifier has a single input for current which is  
referenced to Ground 1. An input current from a laser diode, for example, will be  
converted into a voltage by the feedback resistor RF. The transistor Q1 provides most  
of the open loop gain of the circuit, AVOL70. The emitter follower Q2 minimizes  
loading on Q1. The transistor Q4, resistor R7, and VB1 provide level shifting and  
interface with the Q15 – Q16 differential pair of the second stage which is biased with  
an internal reference, VB2. The differential outputs are derived from emitter followers  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
Q11 – Q12 which are biased by constant current sources. The collectors of Q11 – Q12  
are bonded to an external pin, VCC2, in order to reduce the feedback to the input  
stage. The output impedance is about 17single-ended. For ease of performance  
evaluation, a 33resistor is used in series with each output to match to a 50test  
system.  
12. Bandwidth calculations  
The input stage, shown in Figure 13, employs shunt-series feedback to stabilize the  
current gain of the amplifier. A simplified analysis can determine the performance of  
the amplifier. The equivalent input capacitance, CIN, in parallel with the source, IS, is  
approximately 4 pF (typical), assuming that CS = 0 where CS is the external source  
capacitance.  
Since the input is driven by a current source the input must have a low input  
resistance. The input resistance, RIN, is the ratio of the incremental input voltage, VIN,  
to the corresponding input current, IIN and can be calculated as:  
VIN  
RIN = --------- = ----------------------- =  
IIN 1 + AVOL  
RF  
14.4 kΩ  
-------------------  
71  
= 203Ω  
(2)  
(3)  
(4)  
Thus CIN and RIN will form the dominant pole of the entire amplifier;  
1
f3db  
=
-------------------------  
2πRINCIN  
Assuming typical values for RF = 14.4 k, RIN = 200 , CIN = 4 pF  
1
f3db  
=
2π 4 pF 200 Ω  
The operating point of Q1, Figure 12, has been optimized for the lowest current noise  
without introducing a second dominant pole in the pass-band. All poles associated  
with subsequent stages have been kept at sufficiently high enough frequencies to  
yield an overall single pole response. Although wider bandwidths have been achieved  
by using a cascade input stage configuration, the present solution has the advantage  
of a very uniform, highly desensitized frequency response because the Miller effect  
dominates over the external photodiode and stray capacitances. For example,  
assuming a source capacitance of 1 pF, input stage voltage gain of 70, RIN = 60 Ω  
then the total input capacitance, CIN = (1 + 4) pF which will lead to only a 20%  
bandwidth reduction.  
13. Noise  
Most of the currently installed fiber-optic systems use non-coherent transmission and  
detect incident optical power. Therefore, receiver noise performance becomes very  
important. The input stage achieves a low input referred noise current (spectral  
density) of 1.8 pA/Hz (typical). The transresistance configuration assures that the  
external high value bias resistors often required for photodiode biasing will not  
contribute to the total noise system noise. The equivalent input RMS noise current is  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
strongly determined by the quiescent current of Q1, the feedback resistor RF, and the  
bandwidth; however, it is not dependent upon the internal Miller-capacitance. The  
measured wideband noise was 41 nA RMS in a 200 MHz bandwidth.  
14. Dynamic range calculations  
The electrical dynamic range can be defined as the ratio of maximum input current to  
the peak noise current:  
Electrical dynamic range, DE, in a 200 MHz bandwidth assuming IINMAX = 60 µA and  
a wideband noise of IEQ = 41 nARMS for an external source capacitance of CS = 1 pF.  
(Max. input current)  
(Peak noise current)  
DE  
=
(5)  
(6)  
(7)  
------------------------------------------------  
(60 × 106  
)
D (dB) = 20 log  
----------------------------  
E
9  
(
2 41 10  
)
(60 µA)  
DE(dB) = 20 log -------------------- = 60db  
(58 nA)  
In order to calculate the optical dynamic range the incident optical power must be  
considered.  
For a given wavelength λ;  
hc  
λ
Energy of one Photon =  
watt sec (Joule)  
-----  
Where h = Planck’s Constant = 6.6 × 10-34 Joule sec.  
c = speed of light = 3 × 108 m/sec  
c / λ = optical frequency  
P
-----  
hc  
No. of incident photons/sec = ----- where P = optical incident power  
λ
P
-----  
hc  
λ
No. of generated electrons/sec = η ×  
-----  
where η = quantum efficiency  
no. of generated electron hole pairs  
------------------------------------------------------------------------------------  
=
no. of incident photons  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
P
-----  
hc  
I = η × × e Amps (Coulombs/sec.)  
-----  
λ
where e = electron charge = 1.6 × 10-19 Coulombs  
η × e  
------------  
hc  
λ
Responsivity R =  
Amp/watt  
------------  
I = P × R  
Assuming a data rate of 400 Mbaud (Bandwidth, B = 200 MHz), the noise parameter  
Zn may be calculated as:1  
41 × 109  
IEQ  
Z =  
=
= 1281  
(8)  
-------  
------------------------------------------------------------  
(1.6 × 1019)(200 × 106)  
qB  
where Z is the ratio of RMS noise output to the peak response to a single hole-electron  
pair. Assuming 100% photodetector quantum efficiency, half mark/half space digital  
transmission, 850nm lightwave and using Gaussian approximation, the minimum  
required optical power to achieve 10-9 BER is:  
hc  
PavMIN = 12 BZ = 12 × 2.3 × 1019  
-----  
λ
200 × 106(1281) = 719 nW = 31.5 dBm = 1139 nW = 29.4 dBm  
(9)  
where h is Planck’s Constant, c is the speed of light, λ is the wavelength. The  
minimum input current to the SA5211, at this input power is:  
λ
1
Joule  
sec  
707 × 109 × 1.6 × 1019  
-----  
IavMIN = qP  
×
× q = l =  
= 500 nA  
(10)  
------------ ------------  
----------------------------------------------------------  
avMINhc Joule  
2.3 × 1019  
Choosing the maximum peak overload current of IavMAX = 60 µA, the maximum mean  
optical power is:  
2.3 × 1019  
hclavMAX  
PavMAX = --------------------- =  
60 × 10 µA = 86 µW or – 10.6 dBm (optical)  
(11)  
--------------------------  
1.6 × 1019  
λq  
Thus the optical dynamic range, DO is:  
DO = PavMAX – PavMIN= – 4.6 (29.4) = 24.8 dB  
DO = PavMAX – PavMIN= – 31.5 (10.6)  
(12)  
1. S.D. Personick, Optical Fiber Transmission Systems, Plenum Press, NY, 1981, Chapter 3.  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
OUTPUT +  
A3  
INPUT  
A1  
A2  
R
F
A4  
OUTPUT –  
SD00327  
Fig 11. SA5211 – Block diagram.  
This represents the maximum limit attainable with the SA5211 operating at 200 MHz  
bandwidth, with a half mark/half space digital transmission at 850nm wavelength.  
V
CC1  
V
CC2  
R
R
R
R
13  
1
3
12  
Q
Q
Q
11  
2
4
INPUT  
+
Q
Q
12  
3
Q
1
Q
Q
OUT–  
OUT+  
15  
16  
R
2
R
R
14  
15  
GND  
1
R
+
7
PHOTODIODE  
VB2  
R
5
R
4
GND  
2
SD00328  
Fig 12. Transimpedance amplifier.  
V
CC  
I
R3  
C1  
R1  
INPUT  
Q2  
I
B
I
Q3  
IN  
Q1  
R2  
I
V
F
EQ3  
V
IN  
R
F
R4  
SD00329  
Fig 13. Shunt-series input stage.  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
15. Application information  
Package parasitics, particularly ground lead inductances and parasitic capacitances,  
can significantly degrade the frequency response. Since the SA5211 has differential  
outputs which can feed back signals to the input by parasitic package or board layout  
capacitances, both peaking and attenuating type frequency response shaping is  
possible. Constructing the board layout so that Ground 1 and Ground 2 have very low  
impedance paths has produced the best results. This was accomplished by adding a  
ground-plane stripe underneath the device connecting Ground 1, Pins 8-11, and  
Ground 2, Pins 1 and 2 on opposite ends of the SO14 package. This ground-plane  
stripe also provides isolation between the output return currents flowing to either  
VCC2 or Ground 2 and the input photodiode currents to flowing to Ground 1. Without  
this ground-plane stripe and with large lead inductances on the board, the part may  
be unstable and oscillate near 800 MHz. The easiest way to realize that the part is  
not functioning normally is to measure the DC voltages at the outputs. If they are not  
close to their quiescent values of 3.3 V (for a 5 V supply), then the circuit may be  
oscillating. Input pin layout necessitates that the photodiode be physically very close  
to the input and Ground 1. Connecting Pins 3 and 5 to Ground 1 will tend to shield the  
input but it will also tend to increase the capacitance on the input and slightly reduce  
the bandwidth.  
As with any high-frequency device, some precautions must be observed in order to  
enjoy reliable performance. The first of these is the use of a well-regulated power  
supply. The supply must be capable of providing varying amounts of current without  
significantly changing the voltage level. Proper supply bypassing requires that a good  
quality 0.1 µF high-frequency capacitor be inserted between VCC1 and VCC2  
,
preferably a chip capacitor, as close to the package pins as possible. Also, the  
parallel combination of 0.1 µF capacitors with 10 µF tantalum capacitors from each  
supply, VCC1 and VCC2, to the ground plane should provide adequate decoupling.  
Some applications may require an RF choke in series with the power supply line.  
Separate analog and digital ground leads must be maintained and printed circuit  
board ground plane should be employed whenever possible.  
Figure 14 depicts a 50 Mb/s TTL fiber-optic receiver using the BPF31, 850 nm LED,  
the SA5211 and the SA5214 post amplifier.  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
+V  
CC  
GND  
47µF  
C1  
C2  
.01µF  
L1  
10µH  
C5  
1.0µF  
R1  
100  
D1  
R2  
C7  
LED  
220  
LED  
C
GND  
1
20  
19  
V
V
IN  
8
9
7
6
CC  
1B  
1A  
100pF  
C9  
C3  
10µF  
.01µF  
C4  
.01µF  
2
PKDET  
GND  
GND  
GND  
IN  
CC  
NC  
100pF  
C8  
THRESH  
3
18  
10  
11  
5
4
C
C
C6  
AZP  
GND  
A
I
IN  
4
5
17  
16  
0.1µF  
AZN  
BPF31  
OPTICAL  
INPUT  
R3  
47k  
FLAG  
JAM  
NC  
OUT  
OUT  
12  
13  
3
2
1B  
L2  
10µH  
6
7
15  
14  
GND  
GND  
GND  
OUT  
IN  
8B  
V
CCD  
OUT  
14  
1
1A  
C11  
C10  
V
CCA  
8
13  
12  
10µF  
.01µF  
IN  
R
8A  
GND  
D
9
HYST  
R
TTL  
10  
11  
C12  
10µF  
PKDET  
OUT  
L3  
10µH  
C13  
.01µF  
R4  
4k  
V
(TTL)  
OUT  
SD00330  
The NE5210/NE5217 combination can operate at data rates in excess of 100 Mb/s NRZ  
The capacitor C7 decreases the NE5210 bandwidth to improve overall S/N ratio in the DC-50 MHz band, but does create extra  
high frequency noise on the NE5210 VCC pin(s).  
Fig 14. A 50Mb/s fiber optic receiver.  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
Fig 15. SA5211 Bonding diagram.  
15.1 Die sales disclaimer  
Due to the limitations in testing high frequency and other parameters at the die level,  
and the fact that die electrical characteristics may shift after packaging, die electrical  
parameters are not specified and die are not guaranteed to meet electrical  
characteristics (including temperature range) as noted in this data sheet which is  
intended only to specify electrical characteristics for a packaged device.  
All die are 100% functional with various parametrics tested at the wafer level, at room  
temperature only (25°C), and are guaranteed to be 100% functional as a result of  
electrical testing to the point of wafer sawing only. Although the most modern  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
processes are utilized for wafer sawing and die pick and place into waffle pack  
carriers, it is impossible to guarantee 100% functionality through this process. There  
is no post waffle pack testing performed on individual die.  
Since Philips Semiconductors has no control of third party procedures in the handling  
or packaging of die, Philips Semiconductors assumes no liability for device  
functionality or performance of the die or systems on any die sales.  
Although Philips Semiconductors typically realizes a yield of 85% after assembling  
die into their respective packages, with care customers should achieve a similar yield.  
However, for the reasons stated above, Philips Semiconductors cannot guarantee  
this or any other yield on any die sales.  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
16. Package outline  
SO14: plastic small outline package; 14 leads; body width 3.9 mm  
SOT108-1  
D
E
A
X
v
c
y
H
M
A
E
Z
8
14  
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
1
7
e
detail X  
w
M
b
p
0
2.5  
scale  
5 mm  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
A
(1)  
(1)  
(1)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.  
0.25  
0.10  
1.45  
1.25  
0.49  
0.36  
0.25  
0.19  
8.75  
8.55  
4.0  
3.8  
6.2  
5.8  
1.0  
0.4  
0.7  
0.6  
0.7  
0.3  
mm  
1.75  
1.27  
0.050  
1.05  
0.25  
0.01  
0.25  
0.1  
0.25  
0.01  
8o  
0o  
0.010 0.057  
0.004 0.049  
0.019 0.0100 0.35  
0.014 0.0075 0.34  
0.16  
0.15  
0.244  
0.228  
0.039 0.028  
0.016 0.024  
0.028  
0.012  
inches  
0.041  
0.01 0.004  
0.069  
Note  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
97-05-22  
99-12-27  
SOT108-1  
076E06  
MS-012  
Fig 16. SOT108-1.  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
17. Soldering  
17.1 Introduction to soldering surface mount packages  
This text gives a very brief insight to a complex technology. A more in-depth account  
of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit  
Packages (document order number 9398 652 90011).  
There is no soldering method that is ideal for all surface mount IC packages. Wave  
soldering can still be used for certain surface mount ICs, but it is not suitable for fine  
pitch SMDs. In these situations reflow soldering is recommended.  
17.2 Reflow soldering  
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and  
binding agent) to be applied to the printed-circuit board by screen printing, stencilling  
or pressure-syringe dispensing before package placement.  
Several methods exist for reflowing; for example, convection or convection/infrared  
heating in a conveyor type oven. Throughput times (preheating, soldering and  
cooling) vary between 100 and 200 seconds depending on heating method.  
Typical reflow peak temperatures range from 215 to 250 °C. The top-surface  
temperature of the packages should preferable be kept below 220 °C for thick/large  
packages, and below 235 °C small/thin packages.  
17.3 Wave soldering  
Conventional single wave soldering is not recommended for surface mount devices  
(SMDs) or printed-circuit boards with a high component density, as solder bridging  
and non-wetting can present major problems.  
To overcome these problems the double-wave soldering method was specifically  
developed.  
If wave soldering is used the following conditions must be observed for optimal  
results:  
Use a double-wave soldering method comprising a turbulent wave with high  
upward pressure followed by a smooth laminar wave.  
For packages with leads on two sides and a pitch (e):  
larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be  
parallel to the transport direction of the printed-circuit board;  
smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the  
transport direction of the printed-circuit board.  
The footprint must incorporate solder thieves at the downstream end.  
For packages with leads on four sides, the footprint must be placed at a 45° angle  
to the transport direction of the printed-circuit board. The footprint must  
incorporate solder thieves downstream and at the side corners.  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
During placement and before soldering, the package must be fixed with a droplet of  
adhesive. The adhesive can be applied by screen printing, pin transfer or syringe  
dispensing. The package can be soldered after the adhesive is cured.  
Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the  
need for removal of corrosive residues in most applications.  
17.4 Manual soldering  
Fix the component by first soldering two diagonally-opposite end leads. Use a low  
voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time  
must be limited to 10 seconds at up to 300 °C.  
When using a dedicated tool, all other leads can be soldered in one operation within  
2 to 5 seconds between 270 and 320 °C.  
17.5 Package related soldering information  
Table 6: Suitability of surface mount IC packages for wave and reflow soldering  
methods  
Package  
Soldering method  
Wave  
Reflow[1]  
suitable  
suitable  
BGA, HBGA, LFBGA, SQFP, TFBGA  
not suitable  
not suitable[2]  
HBCC, HLQFP, HSQFP, HSOP, HTQFP,  
HTSSOP, HVQFN, SMS  
PLCC[3], SO, SOJ  
LQFP, QFP, TQFP  
SSOP, TSSOP, VSO  
suitable  
suitable  
suitable  
suitable  
not recommended[3] [4]  
not recommended[5]  
[1] All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the  
maximum temperature (with respect to time) and body size of the package, there is a risk that internal  
or external package cracks may occur due to vaporization of the moisture in them (the so called  
popcorn effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated  
Circuit Packages; Section: Packing Methods.  
[2] These packages are not suitable for wave soldering as a solder joint between the printed-circuit board  
and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top  
version).  
[3] If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave  
direction. The package footprint must incorporate solder thieves downstream and at the side corners.  
[4] Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger  
than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.  
[5] Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than  
0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
18. Revision history  
Table 7: Revision history  
Rev Date  
CPCN  
Description  
03 19981007  
853-1799 20142 Product specification; third version; supersedes second version SA5211_2 of  
1998 Oct 07 (9397 750 04624). Modifications:  
The format of this specification has been redesigned to comply with Philips  
Semiconductors’ new presentation and information standard.  
02 19981007  
01 19950426  
853-1799 20142 Product specification; second version; supersedes first version SA5211_1 of  
1995 Apr 26. Modifications:  
Changed prefix from NE to SA.  
853-1799 15170 Product specification; initial version.  
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Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
19. Data sheet status  
[1]  
[2]  
Data sheet status  
Product status  
Definition  
Objective data  
Development  
This data sheet contains data from the objective specification for product development. Philips Semiconductors  
reserves the right to change the specification in any manner without notice.  
Preliminary data  
Product data  
Qualification  
Production  
This data sheet contains data from the preliminary specification. Supplementary data will be published at a  
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to  
improve the design and supply the best possible product.  
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to  
make changes at any time in order to improve the design, manufacturing and supply. Changes will be  
communicated according to the Customer Product/Process Change Notification (CPCN) procedure  
SNW-SQ-650A.  
[1]  
[2]  
Please consult the most recently issued data sheet before initiating or completing a design.  
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at  
20. Definitions  
21. Disclaimers  
Short-form specification The data in  
extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
a
short-form specification is  
Life support — These products are not designed for use in life support  
appliances, devices, or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors  
customers using or selling these products for use in such applications do so  
at their own risk and agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in accordance with  
the Absolute Maximum Rating System (IEC 60134). Stress above one or  
more of the limiting values may cause permanent damage to the device.  
These are stress ratings only and operation of the device at these or at any  
other conditions above those given in the Characteristics sections of the  
specification is not implied. Exposure to limiting values for extended periods  
may affect device reliability.  
Right to make changes — Philips Semiconductors reserves the right to  
make changes, without notice, in the products, including circuits, standard  
cells, and/or software, described or contained herein in order to improve  
design and/or performance. Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no  
licence or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products  
are free from patent, copyright, or mask work right infringement, unless  
otherwise specified.  
Application information Applications that are described herein for any  
of these products are for illustrative purposes only. Philips Semiconductors  
make no representation or warranty that such applications will be suitable for  
the specified use without further testing or modification.  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
Philips Semiconductors - a worldwide company  
Argentina: see South America  
Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399  
New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811  
Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341  
Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474  
Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001  
Portugal: see Spain  
Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139  
Austria: Tel. +43 160 101, Fax. +43 160 101 1210  
Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773  
Belgium: see The Netherlands  
Brazil: see South America  
Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102  
Canada: Tel. +1 800 234 7381  
Romania: see Italy  
Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919  
Singapore: Tel. +65 350 2538, Fax. +65 251 6500  
Slovakia: see Austria  
China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700  
Colombia: see South America  
Czech Republic: see Austria  
Slovenia: see Italy  
Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044  
Finland: Tel. +358 961 5800, Fax. +358 96 158 0920  
France: Tel. +33 1 4728 6600, Fax. +33 1 4728 6638  
Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300  
Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800  
India: Tel. +91 22 493 8541, Fax. +91 22 493 8722  
Indonesia: see Singapore  
South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398  
South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849  
Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107  
Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745  
Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730  
Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874  
Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447  
Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813  
Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461  
United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421  
United States: Tel. +1 800 234 7381  
Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200  
Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007  
Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800  
Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057  
Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415  
Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880  
Mexico: Tel. +9-5 800 234 7381  
Uruguay: see South America  
Vietnam: see Singapore  
Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553  
Middle East: see Italy  
For all other countries apply to: Philips Semiconductors,  
Marketing Communications,  
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,  
The Netherlands, Fax. +31 40 272 4825  
(SCA72)  
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SA5211  
Transimpedance amplifier (180 MHz)  
Philips Semiconductors  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Static characteristics. . . . . . . . . . . . . . . . . . . . . 3  
Theory of operation . . . . . . . . . . . . . . . . . . . . 13  
Dynamic range calculations . . . . . . . . . . . . . 15  
Application information. . . . . . . . . . . . . . . . . . 18  
Die sales disclaimer . . . . . . . . . . . . . . . . . . . . 20  
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 23  
Manual soldering . . . . . . . . . . . . . . . . . . . . . . 24  
20  
21  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 25  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 26  
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26  
© Philips Electronics N.V. 2001.  
Printed in the U.S.A  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior  
written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or  
contract, is believed to be accurate and reliable and may be changed without notice. No  
liability will be accepted by the publisher for any consequence of its use. Publication  
thereof does not convey nor imply any license under patent- or other industrial or  
intellectual property rights.  
Date of release: 07 October 1998  
Document order number: 9397 750 07427  
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