Philips Music Mixer SA606 User Manual

RF COMMUNICATIONS PRODUCTS  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
IF  
LIMITER  
AMP  
RSSI  
MIXER  
QUAD  
OSCILLATOR  
+
+
V
REG  
AUDIO  
E
B
1
2
3
4
5
6
7
8
9
10  
SA606  
Low-voltage high performance mixer FM  
IF system  
Product Specification  
Replaces data of October 26, 1993  
1997 Nov 07  
RF Data Handbook  
Philip s Se m ic ond uc tors  
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Philips Semiconductors  
Product specification  
Low-voltage high performance mixer FM IF system  
SA606  
BLOCK DIAGRAM  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
IF  
AMP  
LIMITER  
RSSI  
MIXER  
QUAD  
OSCILLATOR  
+
+
V
REG  
AUDIO  
E
B
1
2
3
4
5
6
7
8
9
10  
SR00348  
Figure 2. Block Diagram  
DC ELECTRICAL CHARACTERISTICS  
V
CC  
= +3V, T = 25°C; unless otherwise stated.  
A
LIMITS  
TYP  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNITS  
MAX  
MIN  
2.7  
V
CC  
Power supply voltage range  
DC current drain  
7.0  
4.2  
V
I
3.5  
mA  
CC  
AC ELECTRICAL CHARACTERISTICS  
T = 25°C; V = +3V, unless otherwise stated. RF frequency = 45MHz + 14.5dBV RF input step-up; IF frequency = 455kHz; R17 = 2.4kΩ  
A
CC  
and R18 = 3.3k; RF level = -45dBm; FM modulation = 1kHz with ±8kHz peak deviation. Audio output with de-emphasis filter and C-message  
weighted filter. Test circuit Figure 3. The parameters listed below are tested using automatic test equipment to assure consistent electrical  
characterristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of  
the listed parameters.  
LIMITS  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
Mixer/Osc section (ext LO = 220mV  
)
RMS  
f
Input signal frequency  
150  
150  
6.2  
MHz  
MHz  
dB  
IN  
f
Crystal oscillator frequency  
Noise figure at 45MHz  
OSC  
Third-order input intercept point (50Ω  
f1 = 45.0; f2 = 45.06MHz  
-9  
dBm  
source)  
Input RF level = -52dBm  
Matched 14.5dBV step-up  
50source  
Conversion voltage gain  
13.5  
1.25  
17  
+2.5  
8
19.5  
4.0  
dB  
dB  
kΩ  
pF  
kΩ  
RF input resistance  
RF input capacitance  
Mixer output resistance  
Single-ended input  
3.0  
1.5  
(Pin 20)  
IF section  
IF amp gain  
Limiter gain  
50source  
50source  
44  
58  
dB  
dB  
Input limiting -3dB, R  
AM rejection  
= 2.4k, R  
= 3.3k  
Test at Pin 18  
-109  
45  
dBm  
dB  
17a  
17b  
80% AM 1kHz  
Gain of two (2kAC load)  
IF level -110dBm  
Audio level  
70  
120  
17  
160  
mV  
dB  
SINAD sensitivity  
3
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Philips Semiconductors  
Product specification  
Low-voltage high performance mixer FM IF system  
SA606  
AC ELECTRICAL CHARACTERISTICS (Continued)  
LIMITS  
TYP  
-50  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNITS  
MAX  
MIN  
THD  
S/N  
Total harmonic distortion  
-35  
dB  
dB  
Signal-to-noise ratio  
No modulation for noise  
62  
RF RSSI output, R = 2kΩ  
RF level = -118dBm  
RF level = -68dBm  
RF level = -23dBm  
0.3  
.80  
V
9
.70  
1.1  
1.80  
2.50  
V
1.20  
1.8  
V
RSSI range  
90  
dB  
dB  
kΩ  
kΩ  
kΩ  
kΩ  
RSSI accuracy  
+1.5  
1.5  
IF input impedance  
IF output impedance  
Limiter input impedance  
Limiter output impedance  
Limiter output voltage  
Pin 18  
Pin 16  
Pin 14  
Pin 11  
Pin 11  
1.3  
1.3  
0.3  
1.5  
0.3  
130  
mV  
RMS  
RF/IF section (int LO)  
Audio level  
3V = V , RF level = -27dBm  
120  
2.2  
12  
mV  
CC  
RMS  
System RSSI output  
System SINAD sensitivity  
3V = V , RF level = -27dBm  
V
CC  
RF level = -117dBm  
dB  
12dB(v) insertion loss, a fixed or variable resistor or an L pad for  
simultaneous loss and impedance matching can be added between  
the first IF output (Pin 16) and the interstage network. The overall  
gain will then be 90dB with 2MHz bandwidth.  
CIRCUIT DESCRIPTION  
The SA606 is an IF signal processing system suitable for second IF  
systems with input frequency as high as 150MHz. The bandwidth of  
the IF amplifier and limiter is at least 2MHz with 90dB of gain. The  
gain/bandwidth distribution is optimized for 455kHz, 1.5ksource  
applications. The overall system is well-suited to battery operation  
as well as high performance and high quality products of all types.  
The signal from the second limiting amplifier goes to a Gilbert cell  
quadrature detector. One port of the Gilbert cell is internally driven  
by the IF. The other output of the IF is AC-coupled to a tuned  
quadrature network. This signal, which now has a 90° phase  
relationship to the internal signal, drives the other port of the  
multiplier cell.  
The input stage is a Gilbert cell mixer with oscillator. Typical mixer  
characteristics include a noise figure of 6.2dB, conversion gain of  
17dB, and input third-order intercept of -9dBm. The oscillator will  
operate in excess of 200MHz in L/C tank configurations. Hartley or  
Colpitts circuits can be used up to 100MHz for xtal configurations.  
Butler oscillators are recommended for xtal configurations up to  
150MHz.  
The demodulated output of the quadrature drives an internal op  
amp. This op amp can be configured as a unity gain buffer, or for  
simultaneous gain, filtering, and 2nd-order temperature  
compensation if needed. It can drive an AC load as low as 5kwith  
a rail-to-rail output.  
The output impedance of the mixer is a 1.5kresistor permitting  
direct connection to a 455kHz ceramic filter. The input resistance of  
the limiting IF amplifiers is also 1.5k. With most 455kHz ceramic  
filters and many crystal filters, no impedance matching network is  
necessary. The IF amplifier has 43dB of gain and 5.5MHz  
bandwidth. The IF limiter has 60dB of gain and 4.5MHz bandwidth.  
To achieve optimum linearity of the log signal strength indicator,  
there must be a 12dB(v) insertion loss between the first and second  
IF stages. If the IF filter or interstage network does not cause  
A log signal strength completes the circuitry. The output range is  
greater than 90dB and is temperature compensated. This log signal  
strength indicator exceeds the criteria for AMPs or TACs cellular  
telephone. This signal drives an internal op amp. The op amp is  
capable of rail-to-rail output. It can be used for gain, filtering, or  
2nd-order temperature compensation of the RSSI, if needed.  
NOTE: dB(v) = 20log V  
/V  
OUT IN  
4
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Philips Semiconductors  
Product specification  
Low-voltage high performance mixer FM IF system  
SA606  
-25dB,  
-10dB,  
-29dB,  
929/50PAD  
-10.6dB,  
50/50PAD  
-36dB,  
156k/50PAD  
1500/50PAD 50/50PAD  
C26  
51.5  
96.5  
51.7  
96.5  
32.6  
50.5  
R18  
3.3k  
71.5  
32.8  
2430  
C24  
71.5  
C22  
1.3k  
3880  
C20  
R17  
2.4k  
C15  
C19  
C16  
SW9  
FLT1 SW8  
C23  
SW7  
SW6  
FLT2  
SW5  
C18  
C21  
C17  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
IF  
AMP  
LIMITER  
MIXER  
RSSI  
QUAD  
OSCILLATOR  
+
+
V
REG  
AUDIO  
1
2
3
4
5
6
7
8
9
10  
R13  
R11  
SW10  
SW11  
R14  
R9  
SW1  
L1  
SW3  
SW4  
C8  
C1  
C2  
R10  
C27  
C9  
C12  
C7  
R12  
R19  
16k  
C5  
C6  
C10  
R4  
51.1  
DEEMPHASIS  
FILTER  
IFT1  
L2  
SW2  
X1  
R1  
C4  
C3  
R2  
EXT.  
LOC  
R7  
30.5  
”C” WEIGHTED  
AUDIO  
OSC  
R3  
45MHZ  
MEASUREMENT  
CIRCUIT  
C14  
44.545  
R8  
39.2  
R6  
178  
45.06  
MHZ  
AUDIO  
RSSI  
V
CC  
MINI–CIRCUIT ZSC2–1B  
Automatic Test Circuit Component List  
C27  
C1 100pF NPO Ceramic  
C2 390pF NPO Ceramic  
C5  
C6 22pF NPO Ceramic  
C7 1nF Ceramic  
2.2µF +10% Monolithic Ceramic  
Flt 1 Ceramic Filter Murata SFG455A3 or equiv  
Flt 2 Ceramic Filter Murata SFG455A3 or equiv  
IFT 1 455kHz (Ce = 180pF) Toko RMC–2A6597H  
L1 147–160nH Coilcraft UNI–10/142–04J08S  
100nF +10% Monolithic Ceramic  
C8 10.0pF NPO Ceramic  
L2  
0.8µH nominal  
Toko 292CNS–T1038Z  
X1 44.545MHz Crystal ICM4712701  
C9  
100nF +10% Monolithic Ceramic  
C10  
C12  
C14  
10µF Tantalum (minimum) *  
2.2µF  
100nF +10% Monolithic Ceramic  
R9  
R10  
R11  
R12  
R13  
R14  
R17  
R18  
R19  
2k+1% 1/4W Metal Film  
10k+1%  
10k+1%  
C15 10pF NPO Ceramic  
C17  
100nF +10% Monolithic Ceramic  
2k+1%  
20k+1%  
C18  
C21  
C23  
C25  
C26  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
10k+1%  
2.4k+5% 1/4W Carbon Composition  
3.3kΩ  
16kΩ  
*NOTE: This value can be reduced when a battery is the power source.  
SR00349  
Figure 3. SA606 45MHz Test Circuit (Relays as shown)  
5
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Philips Semiconductors  
Product specification  
Low-voltage high performance mixer FM IF system  
SA606  
C26  
R18  
3.3k  
R17  
2.4k  
C15  
FLT1  
C23  
FLT2  
C18  
C21  
C17  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
IF  
AMP  
LIMITER  
MIXER  
RSSI  
QUAD  
OSCILLATOR  
+ –  
– +  
V
REG  
1
2
3
4
5
6
7
8
9
10  
R11  
10k  
C1  
C2  
C9  
C12  
C8  
R10  
10k  
L1  
C27  
C7  
2.2µF  
C10  
C5  
R19  
11k  
IFT1  
L2  
45MHz  
INPUT  
X1  
C6  
C19  
390pF  
C14  
RSSI  
OUTPUT  
AUDIO  
V
CC  
NE606D/DK Demo Board  
Application Component List  
C1 51pF NPO Ceramic  
C2 220pF NPO Ceramic  
C23  
C26  
C27  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
2.2µF Tantalum  
C5  
100nF +10% Monolithic Ceramic  
Flt 1 Ceramic Filter Murata SFG455A3 or equiv  
Flt 2 Ceramic Filter Murata SFG455A3 or equiv  
C6 5-30pF trim cap  
C7 1nF Ceramic  
IFT 1  
L1  
L2  
330µH TOKO 303LN-1130  
.33µH TOKO SCB-1320Z  
1.2µH  
C8 10.0pF NPO Ceramic  
C9  
100nF +10% Monolithic Ceramic  
C10  
C12  
C14  
10µF Tantalum (minimum) *  
2.2µF +10% Tantalum  
100nF +10% Monolithic Ceramic  
X1 44.545MHz Crystal ICM4712701  
R5 Not Used in Application Board (see Note 8, pg 8)  
R10  
R11  
R17  
R18  
R19  
C15 10pF NPO Ceramic  
8.2k +5% 1/4W Carbon Composition  
10k +5% 1/4W Carbon Composition  
2.4k +5% 1/4W Carbon Composition  
3.3k +5% 1/4W Carbon Composition  
11k +5% 1/4W Carbon Composition  
C17  
C18  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
C19  
C21  
390pF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
* NOTE: This value can be reduced when a battery is the power source.  
SR00350  
Figure 4. SA606 45MHz Application Circuit  
6
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Philips Semiconductors  
Product specification  
Low-voltage high performance mixer FM IF system  
SA606  
RF GENERATOR  
NE606 DEMO BOARD  
45MHz  
RSSI AUDIO  
V
(+3)  
CC  
DE-EMPHASIS  
FILTER  
DC VOLTMETER  
C–MESSAGE  
HP339A DISTORTION  
ANALYZER  
SCOPE  
SR00351  
Figure 5. SA606 Application Circuit Test Set Up  
NOTES:  
1. C-message: The C-message and de-emphasis filter combination has a peak gain of 10 for accurate measurements. Without the gain, the  
measurements may be affected by the noise of the scope and HP339 analyzer. The de-emphasis filter has a fixed -6dB/Octave slope  
between 300Hz and 3kHz.  
2. Ceramic filters: The ceramic filters can be 30kHz SFG455A3s made by Murata which have 30kHz IF bandwidth (they come in blue), or  
16kHz CFU455Ds, also made by Murata (they come in black). All of our specifications and testing are done with the more wideband filter.  
3. RF generator: Set your RF generator at 45.000MHz, use a 1kHz modulation frequency and a 6kHz deviation if you use 16kHz filters, or  
8kHz if you use 30kHz filters.  
4. Sensitivity: The measured typical sensitivity for 12dB SINAD should be 0.35µV or -116dBm at the RF input.  
5. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout.  
6. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and  
design. If the lowest RSSI voltage is 500mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity  
will be worse than expected.  
7. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 10-15µF or higher value tantalum  
capacitor on the supply line is essential. A low frequency ESR screening test on this capacitor will ensure consistent good sensitivity in  
production. A 0.1µF bypass capacitor on the supply pin, and grounded near the 44.545MHz oscillator improves sensitivity by 2-3dB.  
8. R5 can be used to bias the oscillator transistor at a higher current for operation above 45MHz. Recommended value is 10k.  
7
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Philips Semiconductors  
Product specification  
Low-voltage high performance mixer FM IF system  
SA606  
mA  
6
V
= 7V  
CC  
5
4
3
2
V
= 5V  
CC  
V
= 3V  
CC  
V
= 2.7V  
CC  
°C  
–55  
–35  
–15  
5
25  
45  
65  
85  
105  
125  
SR00352  
Figure 6. I vs Temperature  
CC  
–8.0  
–8.5  
–9.0  
2.7V  
3V  
–9.5  
–10.0  
–10.5  
–11.0  
–11.5  
–12.0  
–12.5  
–13.0  
–13.5  
–14.0  
7V  
–40  
–30  
–20  
–10  
0
10  
20  
30  
40  
50  
60  
70  
80  
Temperature (°C)  
SR00353  
Figure 7. Third Order Intercept Point vs Supply Voltage  
8
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Philips Semiconductors  
Product specification  
Low-voltage high performance mixer FM IF system  
SA606  
8.00  
7.75  
7.50  
7.25  
7.00  
6.75  
7.0V  
6.50  
3V  
6.25  
6.00  
5.75  
5.50  
5.25  
5.00  
2.7V  
–40  
–30  
–20  
–10  
0
10  
20  
30  
40  
50  
60  
70  
80  
TEMPERATURE (°C)  
SR00354  
Figure 8. Mixer Noise Figure vs Supply Voltage  
18.00  
17.75  
17.50  
17.25  
17.00  
16.75  
16.50  
16.25  
16.00  
2.7V  
3V  
7.0V  
–40  
–30  
–20  
–10  
0
10  
20  
30  
40  
50  
60  
70  
80  
TEMPERATURE (°C)  
SR00355  
Figure 9. Conversion Gain vs Supply Voltage  
9
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Philips Semiconductors  
Product specification  
Low-voltage high performance mixer FM IF system  
SA606  
20  
10  
0
RF = 45MHz  
IF = 455kHz  
–10  
–20  
–30  
3rd ORDER PRODUCT  
FUND PRODUCT  
–40  
–50  
–60  
–70  
–80  
*50INPUT  
–66  
–56  
–46  
–36  
–26  
–16  
–6  
4
14  
24  
34  
RF* INPUT LEVEL (dBm)  
SR00356  
Figure 10. Mixer Third Order Intercept and Compression  
10  
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Philips Semiconductors  
Product specification  
Low-voltage high performance mixer FM IF system  
SA606  
5
AUDIO  
0
–5  
–10  
V
= 3V  
CC  
–15  
–20  
–25  
–30  
–35  
–40  
–45  
–50  
–55  
–60  
–65  
RF = 45MHz  
DEVIATION = ±8kHz  
AUDIO LEVEL = 104.9mV  
RMS  
AM REJECTION  
THD + NOISE  
NOISE  
–125  
–115  
–105  
–95  
–85  
–75  
–65  
–55  
–45  
–35  
–25  
RF LEVEL (dBm)  
SR00357  
Figure 11. Sensitivity vs RF Level (-40°C)  
5
0
AUDIO  
–5  
–10  
V
= 3V  
CC  
RF = 45MHz  
–20  
–25  
–30  
–35  
–40  
–45  
–50  
–55  
–60  
–65  
DEVIATION = ±8kHz  
AUDIO LEVEL = 117.6mV  
RMS  
AM REJECTION  
THD + NOISE  
NOISE  
–125  
–115  
–105  
–95  
–85  
–75  
RF LEVEL (dBm)  
–65  
–55  
–45  
–35  
–25  
SR00358  
Figure 12. Sensitivity vs RF Level (+25°C)  
11  
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Philips Semiconductors  
Product specification  
Low-voltage high performance mixer FM IF system  
SA606  
5
AUDIO  
0
–5  
–10  
V
= 3V  
–15  
–20  
–25  
–30  
–35  
–40  
–45  
–50  
–55  
–60  
–65  
CC  
RF = 45MHz  
DEVIATION = ±8kHz  
AUDIO LEVEL = 127mV  
RMS  
AM REJECTION  
THD + NOISE  
NOISE  
–125  
–115  
–105  
–95  
–85  
–75  
RF LEVEL (dBm)  
–65  
–55  
–45  
–35  
–25  
SR00359  
Figure 13. Sensitivity vs RF Level (Temperature 85°C)  
5
AUDIO  
0
–5  
–10  
–15  
–20  
–25  
–30  
–35  
–40  
–45  
–50  
–55  
–60  
–65  
V
= 3V  
CC  
RF = 45MHz  
RF LEVEL = -45dBm  
DEVIATION = ±8kHz  
AUDIO LEVEL = +117.6mV  
RMS  
DISTORTION  
AM REJECTION  
NOISE  
–55  
–35  
–15  
5
25  
45  
65  
85  
105  
125  
TEMPERATURE (°C)  
SR00360  
Figure 14. Relative Audio Level, Distortion, AM Rejection and Noise vs Temperature  
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Philips Semiconductors  
Product specification  
Low-voltage high performance mixer FM IF system  
SA606  
2.400  
2.000  
1.600  
1.200  
0.800  
0.400  
0.000  
+85°C  
ROOM  
-40°C  
–95  
–85  
–75  
–65  
–55  
–45  
–35  
–25  
–15  
–5  
5
IF LEVEL (dBm)  
SR00361  
Figure 15. RSSI (455kHz IF @ 3V)  
2.1  
2.0  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
+85°C  
+27°C  
-40°C  
–125  
–115  
–105  
–95  
–85  
–75  
–65  
–55  
–45  
–35  
–25  
RF LEVEL (dBm)  
SR00362  
Figure 16. RSSI vs RF Level and Temperature - V = 3V  
CC  
13  
1997 Nov 07  
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Philips Semiconductors  
Product specification  
Low-voltage high performance mixer FM IF system  
SA606  
V
300  
V
= 7V  
CC  
250  
200  
150  
100  
50  
V
V
= 5V  
= 3V  
CC  
CC  
V
= 2.7V  
CC  
°C  
0
–55  
–35  
–15  
5
25  
45  
65  
85  
105  
125  
SR00363  
Figure 17. Audio Output vs Temperature  
14  
1997 Nov 07  
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Philips Semiconductors  
Product specification  
Low-voltage high performance mixer FM IF system  
SA606  
*Applies to Stand-Alone  
data sheets only.  
KTDN9/91  
NE606  
SR00365  
Figure 18. SA606D SOL Product Board Layout (2X Actual Size* — For Reference Use Only)  
15  
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1997 Nov 07  
Philips Semiconductors  
Product specification  
Low-voltage high performance mixer FM IF system  
SA606  
606 Silk Screen  
606 TOP  
606 BOTTOM  
NOTE;  
All views are TOP VIEW and  
not actual size. For reference only.  
SR00366  
Figure 19.  
16  
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1997 Nov 07  
Philips Semiconductors  
Product specification  
Low-voltage high-performance mixer FM IF system  
SA606  
SO20: plastic small outline package; 20 leads; body width 7.5 mm  
SOT163-1  
17  
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1997 Nov 07  
Philips Semiconductors  
Product specification  
Low-voltage high-performance mixer FM IF system  
SA606  
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm  
SOT266-1  
18  
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1997 Nov 07  
Philips Semiconductors  
Product specification  
Low-voltage high-performance mixer FM IF system  
SA606  
DEFINITIONS  
Data Sheet Identification  
Product Status  
Definition  
This data sheet contains the design target or goal specifications for product development. Specifications  
may change in any manner without notice.  
Objective Specification  
Formative or in Design  
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to make changes at any time without notice in order to improve design  
and supply the best possible product.  
Preliminary Specification  
Product Specification  
Preproduction Product  
Full Production  
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes  
at any time without notice, in order to improve design and supply the best possible product.  
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,  
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,  
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes  
only. PhilipsSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertesting  
or modification.  
LIFE SUPPORT APPLICATIONS  
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,  
orsystemswheremalfunctionofaPhilipsSemiconductorsandPhilipsElectronicsNorthAmericaCorporationProductcanreasonablybeexpected  
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips  
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully  
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.  
Philips Semiconductors  
811 East Arques Avenue  
P.O. Box 3409  
Copyright Philips Electronics North America Corporation 1997  
All rights reserved. Printed in U.S.A.  
Sunnyvale, California 94088–3409  
Telephone 800-234-7381  
Philips  
Semiconductors  
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