This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA1739G
Silicon PNP epitaxial planar type
For high speed switching
Complementary to 2SC3938G
■ Features
• High speed switching
■ Package
• Code
• Low collector-emitter saturation voltage VCE(sat)
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
SMini3-F2
• Marking Symbol: AX
• Pin Name
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
−15
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
−15
V
−4
V
−50
mA
mA
mW
°C
Peak collector current
ICP
−100
150
Collector power dissipation
Junction temperature
PC
Tj
150
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
ICBO
Conditions
Min
Typ
Max
− 0.1
− 0.1
150
Unit
µA
µA
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
VCB = −8 V, IE = 0
IEBO
VCE = −3 V, IC = 0
*
hFE1
VCE = −1 V, IC = −10 mA
VCE = −1 V, IC = −1 mA
50
30
hFE2
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = −10 mA, IB = −1 mA
− 0.1 − 0.2
V
MHz
pF
fT
VCB = −10 V, IE = 10 mA, f = 200 MHz 800
1 500
1
Collector output capacitance
Cob
VCB = −5 V, IE = 0, f = 1 MHz
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
ton
toff
tstg
12
20
19
ns
ns
ns
Refer to the switching time
measurement circuit
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
No-rank
50 to 150
AX
hFE1
50 to 120
AXQ
90 to 150
AXR
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: April 2007
SJC00347AED
1
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This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.65)
1.30 0.10
(5°)
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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