This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
(2SD592)
Silicon NPN epitaxial planar type
For low frequency amplification
Unit: mm
Complementary to 2SB0621 (2SB621)
5.0±0.2
4.0±0.2
Features
Large collector power dissipation PC
Low collector-emitter saturation voltage VCE(sat)
0.7±0.1
Absolute Maximum Ratings T= 25C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
30
+0.15
+0.15
0.45
0.45
–0.1
–0.1
+0.6
+0.6
–0.2
25
V
2.5
2.5
–0.2
5
V
1
2
3
1
1.5
A
1: Emitter
2: Collector
3: Base
Peak collector current
ICP
A
Collector power dissipation
Junction temperature
PC
750
mW
C
C
TO-92-B1 Package
Tj
150
Storage temperature
T
stg
–55 to +150
Electrical Characteristics T= 25C±3C
Parameter
Symbol
Conditions
Min
30
25
5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
VCBO I= 10 µA, I= 0
VCEO IC = 2 mA, IB = 0
VEBO I= 10 µA, I= 0
V
V
ICBO
VCB = 20 V, I= 0
0.1
µA
hFE1
hFE2
VCE = 10 V, I= 500 mA
VCE = 5 V, I= 1A
85
50
340
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat) IC = 500 mA, IB = 50 mA
0.2
0.4
V
V
VBE(sat) IC = 500 mA, IB = 50 mA
0.85
1.2
Collector output capacitance
Cob
fT
VCB = 10 V, IE = 0, f = 1 MHz
20
pF
(Common base, input open circuited)
Transition frequency
VCB = 10 V, IE = —50 mA, f = 200 MHz
200
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Note) The part number in the parenthesis shows conventional part number.
Publication date: May 2006
SJC00344AED
1
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0592
ICEO T
a
104
103
102
10
V
CE = 10 V
1
0
40
80
120
160
(
)
Ambient temperature Ta °C
SJC00344AED
3
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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