This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC5295J
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
+0.05
–0.03
Unit: mm
–0.01
1.60
+0.03
0.12
1.00 0.05
3
■ Features
• High transition frequency fT
1
2
• Low collector output capacitance (Common base, input open cir-
cuited) Cob
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
0.27 0.02
(0.50)(0.50)
5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
15
1: Base
2: Emitter
3: Collector
10
V
2
65
V
EIAJ: SC-89
SSMini3-F1 Package
Collector current
IC
PC
Tj
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
125
Marking Symbol: 3S
125
Tstg
−55 to +125
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
ICBO
IEBO
hFE
Conditions
Min
Typ
Max
1
Unit
µA
µA
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Transition frequency
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
1
VCE = 8 V, IC = 20 mA
50
170
fT
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
VCB = 10 V, IE = 0, f = 1 MHz
7.0
8.5
0.6
GHz
pF
Collector output capacitance
Cob
1.0
(Common base, input open circuited)
Foward transfer gain
Maximum unilateral power gain
Noise figure
S21e2 VCE = 8 V, IC = 15 mA, f = 1.5 GHz
7
9
dB
dB
dB
GUM
NF
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
10
2.2
VCE = 8 V, IC = 7 mA, f = 1.5 GHz
3.0
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
hFE
50 to 120
100 to 170
Publication date: December 2002
SJC00283BED
1
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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