This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC2406
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1035
Package
Code
Features
Low noise voltage NV
High forward current transfer ratio hFE
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Mini3-G1
Pin Name
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Marking Symbol: T
55
55
V
5
50
V
mA
mA
mW
°C
Peak collector current
ICP
100
Collector power dissipation
Junction temperature
PC
200
Tj
150
Storage temperature
T
stg
–55 to +150
°C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
55
55
5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base-emitter voltage
VCBO IC = 10 mA, IE = 0
VCEO IC = 2 mA, IB = 0
VEBO IE = 10 mA, IC = 0
V
V
VBE
ICBO
ICEO
hFE
VCE = 1 V, IC = 100 mA
0.7
1.0
0.1
1
V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
VCB = 10 V, IE = 0
VCB = 10 V, IB = 0
VCE = 5 V, IC = 2 mA
mA
mA
180
700
0.6
VCE(sat) IC = 100 mA, IB = 10 mA
V
fT
VCB = 5 V, IE = –2 mA, f = 200 MHz
200
110
MHz
VCB = 10 V, IC = 1 mA, GV = 80 dB,
Noise voltage
NV
mV
Rg = 100 kΩ, Function = FLAT
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
hFE
R
180 to 360
TR
S
260 to 520
TS
T
360 to 700
TT
Merking symbol
Publication date : October 2008
SJC00422AED
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2406
NV VCE
NV IC
NV IC
160
120
80
300
240
180
120
60
300
240
180
120
60
V
G
CE = 10 V
V
G
CE = 10 V
V = 80 dB
Rg = 100 kΩ
V = 80 dB
Function = RIAA
Function = FLAT
I
C = 1 mA
V = 80 dB
Function = RIAA
G
Rg = 100 kΩ
Rg = 100 kΩ
22 kΩ
22 kΩ
40
22 kΩ
4.7 kΩ
4.7 kΩ
4.7 kΩ
0
0
0
0.01
0.1
1
1
10
100
0.01
0.1
1
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
NV Rg
NV Rg
300
240
180
120
60
160
120
80
40
0
V
G
CE = 10 V
V = 80 dB
V
G
CE = 10 V
V = 80 dB
Function = RIAA
Function = FLAT
I
C = 1 mA
I
C = 1 mA
0.5 mA
0.5 mA
0.1 mA
0.1 mA
0
1
10
100
1
10
100
Signal source resistance Rg (kΩ)
Signal source resistance Rg (kΩ)
SJC00422AED
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2406
Mini3-G1
Unit: mm
+0.10
−0.05
0.40
+0.10
−0.05
0.16
3
2
1
(0.95)
(0.95)
1.9 ±0.1
+0.20
−0.05
2.90
4
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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