NXP Semiconductors Switch PIP3107 D User Manual

Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3107-D  
DESCRIPTION  
QUICK REFERENCE DATA  
Monolithic temperature and  
overload protected logic level power  
MOSFET in TOPFET2 technology  
assembled in a 3 pin surface mount  
plastic package.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
PD  
Tj  
Continuous drain source voltage  
Continuous drain current  
50  
16  
V
A
Total power dissipation  
65  
W
Continuous junction temperature  
150  
˚C  
APPLICATIONS  
RDS(ON)  
IISL  
Drain-source on-state resistance  
50  
m  
General purpose switch for driving  
Input supply current  
VIS = 5 V  
650  
µA  
lamps  
motors  
solenoids  
heaters  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
TrenchMOS output stage  
Current limiting  
Overload protection  
DRAIN  
Overtemperature protection  
Protection latched reset by input  
5 V logic compatible input level  
Control of output stage and  
supply of overload protection  
circuits derived from input  
Low operating input current  
permits direct drive by  
O / V  
CLAMP  
POWER  
INPUT  
MOSFET  
RIG  
micro-controller  
ESD protection on all pins  
Overvoltage clamping for turn  
off of inductive loads  
LOGIC AND  
PROTECTION  
SOURCE  
Fig.1. Elements of the TOPFET.  
PINNING - SOT428  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
tab  
D
S
TOPFET  
input  
drain  
2
I
P
3
source  
2
tab drain  
1
3
October 2001  
1
Rev 1.000  
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Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3107-D  
OUTPUT CHARACTERISTICS  
Limits are for -40˚C Tmb 150˚C; typicals are for Tmb = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
Off-state  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VIS = 0 V  
V(CL)DSS  
Drain-source clamping voltage ID = 10 mA  
IDM = 2 A; tp 300 µs; δ ≤ 0.01  
VDS = 40 V  
50  
50  
-
-
V
V
60  
70  
IDSS  
Drain source leakage current  
-
-
-
100  
10  
µA  
µA  
Tmb = 25 ˚C  
0.1  
On-state  
IDM = 6 A; tp 300 µs; δ ≤ 0.01  
RDS(ON)  
Drain-source resistance  
VIS 4.4 V  
-
-
-
-
-
36  
-
95  
50  
100  
55  
mΩ  
mΩ  
mΩ  
mΩ  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
VIS 4 V  
39  
OVERLOAD CHARACTERISTICS  
-40˚C Tmb 150˚C unless otherwise specified.  
SYMBOL PARAMETER  
Short circuit load  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VDS = 13 V  
ID  
Drain current limiting  
VIS = 5 V;  
4.4 V VIS 5.5 V  
Tmb = 25˚C  
16  
12  
24  
-
32  
36  
A
A
4 V VIS 5.5 V  
8
-
36  
A
Overload protection  
VIS = 5 V;Tmb = 25˚C  
PD(TO)  
TDSC  
Overload power threshold  
Characteristic time  
device trips if PD > PD(TO)  
40  
200  
120  
350  
160  
600  
W
µs  
which determines trip time1  
Overtemperature protection  
Tj(TO)  
Threshold junction  
temperature2  
150  
170  
-
˚C  
1 Trip time td sc varies with overload dissipation PD according to the formula td sc TDSC / ln[ PD / PD(TO) ].  
2 This is independent of the dV/dt of input voltage VIS.  
October 2001  
3
Rev 1.000  
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Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3107-D  
INPUT CHARACTERISTICS  
The supply for the logic and overload protection is taken from the input.  
Limits are for -40˚C Tmb 150˚C; typicals are for Tmb = 25˚C unless otherwise specified  
SYMBOL PARAMETER  
VIS(TO) Input threshold voltage  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VDS = 5 V; ID = 1 mA  
0.6  
1.1  
-
2.4  
2.1  
V
V
Tmb = 25˚C  
1.6  
IIS  
Input supply current  
Input supply current  
normal operation;  
protection latched;  
VIS = 5 V  
VIS = 4 V  
100  
80  
220  
195  
400  
330  
µA  
µA  
IISL  
VIS = 5 V  
VIS = 3 V  
200  
130  
400  
250  
650  
430  
µA  
µA  
VISR  
tlr  
Protection reset voltage1  
Latch reset time  
reset time tr 100 µs  
VIS1 = 5 V, VIS2 < 1 V  
II = 1.5 mA  
1.5  
10  
5.5  
-
2
40  
-
2.9  
100  
8.5  
-
V
µs  
V
V(CL)IS  
RIG  
Input clamping voltage  
Input series resistance2  
Tmb = 25˚C  
33  
kΩ  
to gate of power MOSFET  
SWITCHING CHARACTERISTICS  
Tmb = 25 ˚C; VDD = 13 V; resistive load RL = 4 . Refer to waveform figure and test circuit.  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
td on  
tr  
td off  
tf  
Turn-on delay time  
Rise time  
VIS = 5 V  
-
-
-
-
15  
30  
70  
35  
30  
60  
µs  
µs  
µs  
µs  
Turn-off delay time  
Fall time  
VIS = 0 V  
140  
70  
1 The input voltage below which the overload protection circuits will be reset.  
2 Not directly measureable from device terminals.  
October 2001  
4
Rev 1.000  
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Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3107-D  
MECHANICAL DATA  
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads  
(one lead cropped)  
SOT428  
seating plane  
A
y
A
2
E
A
A
1
b
D
1
2
mounting  
base  
E
1
D
H
E
L
2
2
L
1
L
1
3
b
1
b
w
M
A
c
e
e
1
0
10  
20 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
b
E
H
E
max.  
D
L
1
min.  
A
max.  
E
max.  
y
D
max.  
1
1
(1)  
1
A
A
b
2
UNIT  
mm  
b
c
e
e
1
L
L
w
2
1
2
max.  
max.  
min.  
max.  
0.65 0.89  
0.45 0.71  
0.7  
0.5  
2.38  
2.22  
0.89 1.1  
0.71 0.9  
5.36  
5.26  
0.4 6.22  
0.2 5.98  
6.73  
6.47  
10.4 2.95  
9.6  
2.55  
4.81  
4.45  
4.57  
0.2  
0.2  
4.0 2.285  
0.5  
Note  
1. Measured from heatsink back to lead.  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
SOT428  
98-04-07  
Fig.2. SOT428 surface mounting package1, centre pin connected to mounting base.  
1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.1 g  
For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.  
October 2001  
5
Rev 1.000  
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Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3107-D  
DEFINITIONS  
DATA SHEET STATUS  
DATA SHEET  
STATUS1  
PRODUCT  
DEFINITIONS  
STATUS2  
Objective data  
Development  
This data sheet contains data from the objective specification for  
product development. Philips Semiconductors reserves the right to  
change the specification in any manner without notice  
Preliminary data  
Qualification  
Production  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product  
Product data  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in  
order to improve the design, manufacturing and supply. Changes will  
be communicated according to the Customer Product/Process  
Change Notification (CPCN) procedure SNW-SQ-650A  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 2001  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
1 Please consult the most recently issued datasheet before initiating or completing a design.  
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is  
October 2001  
6
Rev 1.000  
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