CGD942C
870 MHz, 23 dB gain power doubler amplifier
Rev. 01 — 7 June 2007
Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
(DC), employing Hetero Field Effect Transistor (HFET) GaAs dies.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I High output capability
I Excellent linearity
I Extremely low noise
I Excellent return loss properties
I Rugged construction
I Gold metallization ensures excellent reliability
1.3 Applications
I CATV systems operating in the 40 MHz to 870 MHz frequency range
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
f = 870 MHz
VB = 24 V
Min
22
-
Typ
23
Max
24
-
Unit
dB
Gp
Itot
power gain
total current
450
mA
[1] Direct Current (DC)
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CGD942C
NXP Semiconductors
870 MHz, 23 dB gain power doubler amplifier
5. Characteristics
Table 5.
Characteristics
Bandwidth to 870 MHz; VB = 24 V (DC); Tmb = 35 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
Gp
power gain
f = 870 MHz
22
1
23
24
2
dB
dB
dB
SLsl
FL
slope straight line
f = 40 MHz to 870 MHz
f = 40 MHz to 870 MHz
79 + 53 flat NTSC channels
98 flat PAL channels
79 + 53 flat NTSC channels
98 flat PAL channels
79 + 53 flat NTSC channels
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 870 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 870 MHz
f = 50 MHz
-
flatness of frequency response
composite triple beat
-
0.5
-
CTB
-
−68
−66 dB
dB
−67 dB
dB
−58 dB
-
−66
-
CSO
composite second-order distortion
-
−70
-
−66
-
Xmod
RLin
cross modulation
input return loss
-
−66
20
19
18
18
18
20
19
18
18
18
-
-
-
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
mA
-
-
-
-
-
-
-
-
RLout
output return loss
-
-
-
-
-
-
-
-
-
-
NF
Itot
noise figure
total current
3.5
3.5
450
5.0
5.0
-
f = 870 MHz
-
VB = 24 V
-
[1] Gp at 870 MHz minus Gp at 40 MHz.
[2] Flatness straight line (peak to valley).
[3] 79 NTSC channels: 55.25 MHz to 547.25 MHz, 48 dBmV output level; + 53 NTSC channels 553.25 MHz to 997.25 MHz, 38 dBmV
output level.
[4] Vo = 48 dBmV.
[5] Direct Current (DC).
CGD942C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 7 June 2007
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CGD942C
NXP Semiconductors
870 MHz, 23 dB gain power doubler amplifier
6. Package outline
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A
2
1
2
3
5
7
8
9
A
L
F
S
W
e
b
M
w
x
c
e
1
d
q
y
M
B
2
U
Q
2
B
q
M
B
1
y
M
B
p
U
q
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
d
max.
A
max.
D
max.
E
max.
L
min.
Q
max.
Z
y
2
UNIT
e
e
p
q
W
w
x
b
c
F
q
q
S
U
U
2
1
1
2
1
max.
max.
4.15
3.85
0.51
0.38
44.75 8.2 6-32
44.25 7.8 UNC
mm 20.8 9.1
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
2.4 38.1 25.4 10.2 4.2
0.25 0.7 0.1 3.8
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-02-06
04-02-04
SOT115J
Fig 1. Package outline SOT115J
CGD942C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 7 June 2007
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CGD942C
NXP Semiconductors
870 MHz, 23 dB gain power doubler amplifier
7. Abbreviations
Table 6.
Abbreviations
Description
Acronym
CATV
DC
CAble TeleVision
Direct Current
NTSC
PAL
National Television Standard Committee
Phase-Alternation Line
RF
Radio Frequency
UNC
UNified Coarse thread
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Product data sheet
Change notice
Supersedes
CGD942C_1
20070607
-
-
CGD942C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
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CGD942C
NXP Semiconductors
870 MHz, 23 dB gain power doubler amplifier
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
9.4
Trademarks
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
CGD942C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 7 June 2007
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CGD942C
NXP Semiconductors
870 MHz, 23 dB gain power doubler amplifier
11. Contents
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For sales office addresses, please send an email to: [email protected]
Date of release: 7 June 2007
Document identifier: CGD942C_1
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